First Sensor APD Hybrid Series Data Sheet

Part Description AD230-9-400M-TO5

US Order # 05-059-01, # 05-059-02

International Order # 50075601, # 50075602

2.2

Ø 0.46

5 PL

PIN 5

CASE/ GND

Ø9.2

PIN 1

V out+

PIN 2

V

CC

Ø8.3

Ø6.60

116°

VIEWING

ANGLE

1.00 SQ

4.2

±1

7.6 MIN

5 PL

ACTIVE AREA: 0.042 mm 2

(230 µm DIAMETER)

PIN 4

V out-

Ø5.08

PIN CIRCLE

PIN 3

+V

BIAS

BACKSIDE VIEW

CHIP DIMENSIONS

FEATURES

• ∅ 0.230 mm active area

• Low noise

• High gain

• Long term stability

DESCRIPTION

The AD230-9-400M-TO5 is an Avalanche Photodiode Amplifier

Hybrid containing a 0.042 mm

2

active area APD chip integrated with an internal transimpedance amplifier. Hermetically packaged in a TO-5 with a borosilicate glass window cap.

APPLICATIONS

• Lidar

• Analytical instruments

• Medical equipment

R o

H

S

ABSOLUTE MAXIMUM RATING

SYMBOL PARAMETER

T

STG

Storage Temp

T

OP

Operating Temp

T

SOLDERING

Soldering Temp

P

V cc

I cc

Power Dissipation

SCHEMATIC

MIN MAX UNITS

-55 +125

0

-

+60

+240

Single Supply Voltage +3.0

+5.5

Supply Current

V

CC

(+5V)

-

360

63

°

°

C

° C

C

V mA mW

PIN 2

C1

OUT+

PIN 1

70

60

50

40

30

20

10

0

SPECTRAL RESPONSE at M = 100

400 500 600 700 800 900 1000 1100

AD230-9

C2

OUT-

PIN 4

PIN 5

CASE/GND

WAVELENGTH (nm)

PIN 3

+V

BIAS

ELECTRO-OPTICAL CHARACTERISTICS @ 23°°°° C (V

SYMBOL CHARACTERISTIC

CC

= single supply +3.3V, R

L

TEST CONDITIONS

ƒ

-3dB

S

I cc

Frequency Response

Sensitivity*

-3dB @ 905 nm

λ = 905 nm; M = 100

Supply Current Dark state

* Sensitivity = APD responsivity (0.58 A/W X 100 gain) x TIA gain (2.5K)

= 100W unless otherwise specified)

MIN

---

---

---

TYP

400

145

34

MAX

---

63

UNITS

MHz

--mV/µW mA

Use US order number 05-059-01, or International order number 50075601 for breakdown voltage range of 160-200 Volts.

Use US order number 05-059-02, or International order number 50075602 for breakdown voltage range of 200-240 Volts.

These devices are sensitive to electrostatic discharge. Please use ESD precautions when handling.

Disclaimer: Due to our policy of continued development, specifications are subject to change without notice.

C

O

M

P

L

T

N

11/6/2013

AVALANCHE PHOTODIODE DATA @ 23 °°°°C

SYMBOL

I

D

C

V

BR

CHARACTERISTIC

Dark Current

TEST CONDITIONS

M = 100 (see note 2)

Capacitance M = 100 (see note 2)

Breakdown Voltage (see note 1) I

D

= 2 µA

Temperature Coefficient of V

BR

Responsivity M = 100; = 0 V; λ = 905 nm

∆ƒ

3dB

Bandwidth -3dB t r

Rise Time

Optimum Gain

M = 100

MIN

---

---

160

1.25

52

---

---

TYP

0.5

0.6

---

MAX

1.5

---

240

UNITS nA pF

V

---

58

0.6

0.5

1.55

60

---

---

V/K

A/W

GHz ns

“Excess Noise” factor M = 100

50

---

60

2.5

---

---

“Excess Noise” index

Noise Current

M = 100

M = 100

---

---

0.2

0.5

---

--- pA/Hz

1/2

NEP

Max Gain

Noise Equivalent Power M = 100; λ = 905 nm

200

---

---

1.0 X 10

-14

---

---

W/Hz

1/2

Note 1: The following different breakdown voltage ranges are available: (160 – 200 V), (200 – 240 V).

Note 2: Measurement conditions: Setup of photo current 1 nA at M = 1 and irradiated by a 880 nm, 80 nm bandwidth LED. Increase the photo

current up to 100 nA, (M = 100) by internal multiplication due to an increasing bias voltage.

TRANSIMPEDANCE AMPLIFIER DATA @ 25 °°°°C

(V cc = +3.0 V to 5.5 V, T A = 0°C to 70°C, 100Ω load between OUT+ and OUT-. Typical values are at T A = 25°C, Vcc = +3.3 V)

PARAMETER

Supply Voltage

Supply Current

TEST CONDITIONS MIN

3

---

TYP

5

34

MAX

5.5

63

UNITS

V mA

Transimpedance Differential, measured with 40 µA p-p signal 2.10 2.75 3.40 kΩ

Output impedance Single ended per side

Maximum Differential Output Voltage Input = 2 mA p-p with 100 Ω differential termination

AC Input Overload

48

220

2

50

380

---

52

575

---

Ω mV p-p mA p-p

DC Input Overload 1 --- --- mA

Input Referred RMS Noise TO-5 package, see note 4 --- 490 668 nA

Input Referred Noise Density See note 4 --- 11 --- pA/Hz

1/2

Small signal bandwidth

Low Frequency Cutoff

Source capacitance = 0.85 pF, see note 3

-3 dB, input < 20 µA DC

1.525

---

2.00

30

---

---

GHz kHz

Transimpedance Linear Range Peak to peak 0.95 < linearity < 1.05 40 --- ---

µA p-p

Power Supply Rejection Ratio

(PSRR)

Output referred, f < 2 MHz, PSSR = -20 Log (∆Vout /

∆Vcc)

---

50

--- dB

Note 3: Source capacitance for AD230-9-400M-TO5 is the capacitance of APD.

Note 4: Input referred noise is calculated as RMS output noise/ (gain at f = 10 Mhz). Noise density is (input referred noise)/√bandwidth.

TRANSFER CHARACTERISTICS

The circuit used is an avalanche photodiode directly coupled

to a high speed data handling transimpedance amplifier. The output of the APD

(light generated current) is applied to the input of the amplifier. The amplifier output is in the form of a differential voltage pulsed signal.

The APD responsivity curve is provided in Fig. 2. The term Amps/Watt involves the area of the APD and can be expressed as

Amps/mm

2

/Watts/mm

2

, where the numerator applies to the current generated divided by the area of the detector, the denominator refers to the power of the radiant energy present per unit area. As an example assume a radiant input of 1 microwatt at 905 nm. The APD’s corresponding responsivity is 0.58 A/W.

If energy in = 1 µW, then the current from the APD = (0.58 A/W) x (1x10

-6

W) = 0.58 µA. We can then factor in the typical gain of the APD

of 100, making the input current to the amplifier 58 µA. From Fig. 5 we can see the amplifier output will be approximately 110 mV p-p.

APPLICATION NOTES

The AD230-9-400M-TO5 is a high speed optical data receiver. It incorporates an internal transimpedance amplifier with an avalanche photodiode.

This detector requires +3.5 V to +5.0 V voltage supply for the amplifier and a high voltage supply (100-240 V) for the APD. The internal APD follows the gain curve published for the AD230-9-TO52-S1 avalanche photodiode. The transimpedance amplifier provides differential output signals in the range of 200 millivolts differential.

In order to achieve highest gain, the avalanche photodiode needs a positive bias voltage (Fig. 1). However, a current limiting resistor must be placed in series with the photodiode bias voltage to limit the current into the transimpedance amplifier. Failure to limit this current may result in permanent failure of the device. The suggested initial value for this limiting resistor is 390 KOhm.

When using this receiver, good high frequency placement and routing techniques should be followed in order to achieve maximum frequency response. This includes the use of bypass capacitors, short leads and careful attention to impedance matching. The large gain bandwidth values of this device also demand that good shielding practices be used to avoid parasitic oscillations and reduce output noise.

11/6/2013

Fig. 1: APD GAIN vs BIAS VOLTAGE Fig. 2: APD SPECTRAL RESPONSE (M = 1)

0.7

1000

0.6

0.5

100

0.4

0.3

10 0.2

0.1

1

140 150 160 170 180 190 200 210 220

0.0

400 500 600 700 800 900 1000 1100

APPLIED VOLTAGE (V)

WAVELENGTH (nm)

Fig. 3 : AMPLIFIER OUTPUT vs TEMPERATURE Fig.4 : APD CAPACITANCE vs BIAS VOLTAGE

400

7

380

360 6

340

320

300

280

260

5

4

3

2

240

220

200

0 20 40 60

AMBIENT TEMPERATURE (°C)

80

1

0

0 10 20 30 40 50

REVERSE BIAS (V)

60 70 80

Fig. 5: AMPLIFIER TRANSFER FUNCTION Fig. 6: TOTAL FREQUENCY RESPONSE

200

150

100

50

0

-50

-100

-150

70

65

60

55

-200

-100 -75 -50 -25 0 25

INPUT CURRENT (µA)

50

USA:

First Sensor, Inc.

5700 Corsa Avenue, #105

Westlake Village, CA 91362 USA

T + 818 706-3400

F + 818 889-7053 [email protected]

www.first-sensor.com

11/6/2013

75 100

50

1M 10M 100M

FREQUENCY (Hz)

400M 1G

International sales:

First Sensor AG

Peter-Behrens-Str. 15

12459 Berlin, Germany

T + 49 30 6399 2399

F + 49 30 639923-752 [email protected]

www.first-sensor.com

Mouser Electronics

Authorized Distributor

Click to View Pricing, Inventory, Delivery & Lifecycle Information:

First Sensor :

AD230-9-400M-TO5