LF353
JFET-INPUT
DUAL OPERATIONAL AMPLIFIER
SLOS012B – MARCH 1987 – REVISED AUGUST 1994
D
D
D
D
D
D
D
D
D OR P PACKAGE
(TOP VIEW)
Low Input Bias Current . . . 50 pA Typ
Low Input Noise Current
0.01 pA/√Hz Typ
Low Input Noise Voltage . . . 18 nV/√Hz Typ
Low Supply Current . . . 3.6 mA Typ
High Input Impedance . . . 1012 Ω Typ
Internally Trimmed Offset Voltage
Gain Bandwidth . . . 3 MHz Typ
High Slew Rate . . . 13 V/µs Typ
1OUT
1IN –
1IN +
VCC –
1
8
2
7
3
6
4
5
VCC +
2OUT
2IN –
2IN +
description
This device is a low-cost, high-speed, JFET-input operational amplifier with very low input offset voltage. It
requires low supply current yet maintains a large gain-bandwidth product and a fast slew rate. In addition, the
matched high-voltage JFET input provides very low input bias and offset currents.
The LF353 can be used in applications such as high-speed integrators, digital-to-analog converters,
sample-and-hold circuits, and many other circuits.
The LF353 is characterized for operation from 0°C to 70°C.
symbol (each amplifier
–
IN –
OUT
+
IN +
AVAILABLE OPTIONS
TA
VIOmax
AT 25°C
0°C to 70°C
10 mV
PACKAGE
SMALL OUTLINE
(D)
PLASTIC DIP
(P)
LF353D
LF353P
The D packages are available taped and reeled. Add the suffix R to the
device type (ie., LF353DR).
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage, VCC + . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V
Supply voltage, VCC – . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 18 V
Differential input voltage, VID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 30 V
Input voltage, VI (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ± 15 V
Duration of output short circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . unlimited
Continuous total power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Operating temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0°C to 70°C
Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . – 65°C to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C
NOTE 1: Unless otherwise specified, the absolute maximum negative input voltage is equal to the negative power supply voltage.
Copyright  1994, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
LF353
JFET-INPUT
DUAL OPERATIONAL AMPLIFIER
SLOS012B – MARCH 1987 – REVISED AUGUST 1994
recommended operating conditions
MIN
MAX
Supply voltage, VCC +
3.5
18
V
Supply voltage, VCC –
– 3.5
– 18
V
UNIT
electrical characteristics over operating free-air temperature range, VCC ± = ±15 V (unless
otherwise specified)
PARAMETER
TEST CONDITIONS
VIO
Input offset voltage
VIC = 0
0,
RS = 10 kΩ
αVIO
Average temperature coefficient of input offset
voltage
VIC = 0,
RS = 10 kΩ
IIO
Inp t offset current
Input
c rrent‡
VIC = 0
IIB
Inp t bias current
Input
c rrent‡
VIC = 0
VICR
Common-mode input voltage range
VOM
Maximum peak output voltage swing
TA†
25°C
MIN
TYP
MAX
5
10
Full range
13
25
70°C
25°C
50
70°C
AVD
Large signal differential voltage
Large-signal
VO = ± 10 V
V,
ri
Input resistance
CMRR
Common-mode rejection ratio
TJ = 25°C
RS ≤ 10 kΩ
kSVR
Supply-voltage rejection ratio
See Note 2
RL = 2 kΩ
100
pA
4
nA
200
pA
8
nA
± 11
– 12
to
15
V
V
± 12
± 13.5
25°C
25
100
Full range
15
RL = 10 kΩ
mV
µV/°C
10
25°C
UNIT
V/mV
1012
Ω
70
100
dB
70
100
dB
ICC
Supply current
3.6
6.5
mA
† Full range is 0°C to 70°C.
‡ Input bias currents of a FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive. Pulse techniques
must be used that will maintain the junction temperatures as close to the ambient temperature as possible.
NOTE 2: Supply-voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously.
operating characteristics, VCC± = ±15 V, TA = 25°C
PARAMETER
TEST CONDITIONS
VO1/VO2
SR
Crosstalk attentuation
B1
Vn
Unity-gain bandwidth
Equivalent input noise voltage
f = 1 kHz,
In
Equivalent input noise current
f = 1 kHz
2
MIN
f = 1 kHz
Slew rate
8
POST OFFICE BOX 655303
RS = 20 Ω
• DALLAS, TEXAS 75265
TYP
MAX
UNIT
120
dB
13
V/µs
3
MHz
18
nV/√Hz
0.01
pA/√Hz
PACKAGE OPTION ADDENDUM
www.ti.com
24-Oct-2006
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
LF353D
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LF353DE4
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LF353DG4
ACTIVE
SOIC
D
8
75
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LF353DR
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LF353DRE4
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LF353DRG4
ACTIVE
SOIC
D
8
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LF353P
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
LF353PE4
ACTIVE
PDIP
P
8
50
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Jul-2011
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
LF353DR
Package Package Pins
Type Drawing
SOIC
D
8
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
2500
330.0
12.4
Pack Materials-Page 1
6.4
B0
(mm)
K0
(mm)
P1
(mm)
5.2
2.1
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
8-Jul-2011
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LF353DR
SOIC
D
8
2500
346.0
346.0
29.0
Pack Materials-Page 2
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