DDR3 Synchronous Dynamic Ram 3D3D16G16WB2649

MEMORY MODULE
DDR3 SDRam 1Gx16-BGA
3D3D16G16WB2649
DDR3 Synchronous Dynamic Ram
16Gbit DDR3 SDRam organized as 1Gx16 based on 1Gx8
Pin Assignment (Top View)
BGA 96 (Pitch : 0.80 mm)
Main applications:





Embedded Systems
Workstations
Servers
Super Computers
Test Systems
Features and Benefits
-
96 balls JEDEC standard ball-out
Combines two 8Gbx8 devices in one package
Vdd=VddQ = +1.5V
Differential bidirectional data strobe
8n-bit prefetch architecture
8 internal banks per memory
Nominal and dynamic on-die termination
Programmable CAS latency
Posted CAS additive latency
Fixed burst lengths of 8 and burst chp (BC) of 4
Selectable BC4 or BL8 on-the-fly
Self refresh mode
Write leveling
Multipurpose register
Output driver calibration
Clock rate available : 1333 Mbps
Commercial, Industrial and Military temperature
range.
FUNCTIONAL Block Diagram
1
LDM
General description
1Gx8
3D Plus offers a new 16Gbit DDR3 SDRAM cube
compatible with the JEDEC standard footprint.
DQ[7:0]
LDQS
LDQS#
This product embeds 2 chips with a capacity of 8Gb (1Gx8)
each.
Our products are available at 1333 Mbps in Commercial,
Industrial and Military temperature range.
Thanks to the high density patented technology the
memories are embedded in a small form factor device
without compromising electrical or thermal performance.
This device is ideal for high density memory applications
that require high speed transfer and compatibility with
standard servers and networking equipment.
DDR3 Memory Module
Preliminary
2
UDM
1Gx8 DQ[15:8]
UDQS
UDQS#
(All other signals are common to the devices)
3D Plus SA reserves the right to cancel product or specifications without notice
3DFP-0649-REV 1 – MARCH 2014
MEMORY MODULE
DDR3 SDRam 1Gx16-BGA
3D3D16G16WB2649
DDR3 Synchronous Dynamic Ram
16Gbit DDR3 SDRam organized as 1Gx16 based on 1Gx8
A
A1
D
E1
b
e
Parameter
Max
4
0,2
12,6
12,2
0,4
0,8
Dimensions (mm)
ABSOLUTE MAXIMUM DC RATINGS
DC OPERATING CONDITIONS
Supply Voltage
I/O Supply Voltage
Min
3,6
0,17
12,3
11,8
Symbol
Min
Max
Unit
VDD
VDDQ
1.425
1.425
1.575
1.575
V
V
Parameter
Voltage on any ball relative to VSS
Input Leakage Current
Vref Supply Leakage Current
Storage temperature
Symbol
Min
Max
Unit
VIN, VOUT
Ii
IVref
TSTG
-0.4
-4
-2
-55
+1,875
+4
+2
+150
V
µA
µA
°C
Electrical Characteristics
Parameter
Note :
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS"
are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could
affect device reliability
3D3D16G16WB2649
Operating Current (one bank active)
Precharge Power Down Current
Room Temp Self Refresh
Symbol
Value
Unit
IDD1
222
48
50
mA
mA
mA
IDD2P0
IDD6
X
Temperature Range
C = 0°C ~ +70°C
I = -40°C ~ +85°C
M = -55°C + 125°C
Main Sales Office:
3D PLUS
FRANCE
408, rue Hélène Boucher ZI.
78532 BUC Cedex
USA
6401 Eldorado Parkway
Suite 238
Mckinney, TX 75070
Tel : 33 (0)13 0 83 26 50
Fax : 33 (0)1 39 56 25 89
Web : www.3d-plus.com
e-mail : sales@3d-plus.com
Tel : (241) 733-8505
Tel : (241) 733-8506
e-mail : sales@3d-plus.com
DISTRIBUTOR
3D PLUS USA, Inc
DDR3 Memory Module
Preliminary
3D Plus SA reserves the right to cancel product or specifications without notice
3DFP-0649-REV 1 – MARCH 2014
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