Samsung Semiconductor, Inc.
Product Selection Guide
Memory and Storage
January 2009
Samsung Semiconductor, Inc.
Samsung offers the industry’s broadest memory portfolio and has maintained its
leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM
products are found in computers—from ultra-mobile portables to powerful servers—
and in a wide range of handheld devices such as smartphones and MP3 players.
Samsung also delivers the industry’s widest line of storage products. These inlcude
optical and hard disk drives as well as flash storage, such as the all-flash Solid State
Drive and a range of embedded and removable flash storage products.
SAMSUNG PRODUCT OFFERINGS
Markets
DRAM
Mobile/Wireless
Notebook PCs
Desktop
PCs/Workstations
Servers
Networking/
Communications
Consumer
Electronics
www.samsung.com/semi/us
SRAM
FLASH
ASIC
LOGIC
TFT/LCD
ODD/HDD
SRAM
www.samsung.com/semi/sram
• UtRAM
• Asynchronous SRAM
• NtRAM
• Late-write R-R SRAM
• DDR / II / II+ SRAM
• QDR / II / II+ SRAM
MULTI-CHIP PACKAGE
www.samsung.com/semi/mcp
• NAND/DRAM
• OneNAND/DRAM
• Flex-OneNAND/DRAM
• OneNAND/DRAM/OneDRAM
• moviNAND/NAND/DRAM
Fusion Memory
• OneNAND™: see Fusion
• moviNAND™: see Fusion
• Flex-OneNAND™: see Fusion
HaManufacturers
Solid
State Drives repsr• Flash
Solid State Drives
www.samsungssd.com
Optical
Disk Drives
•
Flash Solid
State Drives
www.samsungodd.com
Hard Disk Drives
• External DVD
www.samsung.com/hdd
• Internal DVD
• Hard Disk Drives
• Internal COMBO
D RAM
Pages 20 -25
• Synchronous SRAM
Ordering Information
Pages 26-27
• NOR/UtRAM
• NOR/DRAM
• OneDRAM/OneNAND/NAND
Page 28
FUS ION
FUSION MEMORY
www.samsung.com/semi/fusion
• OneNAND™
• Flex-OneNAND™
• moviNAND™
• OneDRAM™
STORAGE
FLASH
www.samsung.com/semi/flash
• SLC Flash
• MLC Flash
• SD and microSD Cards
• Flash Product Ordering
Information
• Solid State Drive: see Storage
Pages 15-19
SRAM
FLASH
• Graphics DDR SDRAM
• DRAM Ordering Information
• OneDRAM™: see Fusion
MCP
www.samsung.com/semi/dram
• DDR3 SDRAM
• DDR2 SDRAM
• DDR
• SDRAM
• Mobile SDRAM
• RDRAM
Pages 4-14
Pages 29-33
• Internal
CD Drives
Optical Disk
www.samsungodd.com
• External DVD
• Internal DVD
• Internal COMBO
• Internal CD
S TOR AGE
DRAM
DDR3 SDRAM REGISTERED MODULES
Density
Organization
Part Number
Composition
Compliance
Speed (Mbps)
Banks
1GB
128Mx72
M393B2873DZ1-C(F7/F8/H9)
1Gb (128M x8)*9
RoHS
800/1066/1333
1
2GB
256Mx72
M393B5673DZ1-C(F7/F8/H9)
1Gb (128M x8)*18
RoHS
800/1066/1333
2
2GB
256Mx72
M393B5670DZ1-C(F7/F8/H9)
1Gb (256M x4)*18
RoHS
800/1066/1333
1
4GB
512Mx72
M393B5173DZ1-C(F7/F8)
1Gb (128M x8)*36
RoHS
800/1066
4
4GB
512Mx72
M393B5170DZ1-C(F7/F8/H9)
1Gb (256M x4)*36
RoHS
800/1066/1333
2
8GB
1Gx72
M393B1G70DJ1-C(F7/F8)
2Gb (512M x4)*36
RoHS
800/1066
4
1GB
128Mx72
M393B2873EH1-C(F7/F8/H9)
1Gb (128M x8)*9
RoHS & Halogen Free
800/1066/1333
1
2GB
256Mx72
M393B5673EH1-C(F7/F8/H9)
1Gb (128M x8)*18
RoHS & Halogen Free
800/1066/1333
2
2GB
256Mx72
M393B5670EH1-C(F7/F8/H9)
1Gb (256M x8)*18
RoHS & Halogen Free
800/1066/1333
1
4GB
512Mx72
M393B5173EH1-C(F7/F8)
1Gb (128M x8)*36
RoHS & Halogen Free
800/1066
4
4GB
512Mx72
M393B5170EH1-C(F7/F8/H9)
1Gb (256M x4)*36
RoHS & Halogen Free
800/1066/1333
2
8GB
1Gx72
M393B1G70EM1-C(F7/F8)
2Gb (512M x4)*36
RoHS & Halogen Free
800/1066
4
8GB
1Gx72
M393B1K70BH1-C(F7/F8/H9)
2Gb (512M x4)*36
RoHS & Halogen Free
800/1066/1333
2
16GB
2Gx72
M393B2K70BM1-C(F7/F8)
4Gb (1024M x4)*36
RoHS & Halogen Free
800/1066
4
1GB
128Mx64
M471B2874DZ1-C(F7/F8/H9)
1Gb (64M x16)*8
RoHS
800/1066/1333
2
2GB
256Mx64
M471B5673DZ1-C(F7/F8/H9)
1Gb (128M x8)*16
RoHS
800/1066/1333
2
1GB
128Mx64
M471B2873EH1-C(F8/H9)
1Gb (128M x8)*8
RoHS & Halogen Free
1066/1333
1
1GB
128Mx64
M471B2874EH1-C(F8/H9)
1Gb (64M x16)*8
RoHS & Halogen Free
1066/1333
2
2GB
256Mx64
M471B5673EH1-C(F8/H9)
1Gb (128M x8)*16
RoHS & Halogen Free
1066/1333
2
4GB
512Mx64
M471B5273BH1-C(F8/H9)
2Gb (256M x8)*16
RoHS & Halogen Free
1066/1333
2
Notes:
F7= DDR3-800 (6-6-6)
F8 = DDR3-1066 (7-7-7)
H9 = DDR3-1333 (9-9-9)
Voltage = 1.5V
DDR3 SDRAM UNBUFFERED MODULES
Density
Organization
Part Number
Composition
Compliance
Speed (Mbps)
Module Ranks
1GB
128Mx64
M378B2873DZ1-C(F8/H9)
1Gb (128M x8)*8
RoHS
1066/1333
1
2GB
256Mx64
M378B5673DZ1-C(F8/H9)
1Gb (128M x8)*16
RoHS
1066/1333
2
1GB
128Mx64
M378B2873EH1-C(F8/H9)
1Gb (128M x8)*8
RoHS & Halogen Free
1066/1333
1
2GB
256Mx64
M378B5673EH1-C(F8/H9)
1Gb (128M x8)*16
RoHS & Halogen Free
1066/1333
2
4GB
512Mx64
M378B5273BH1-C(F8/H9)
2Gb (256M x8)*16
RoHS & Halogen Free
1066/1333
2
DDR3 SDRAM UNBUFFERED MODULES (ECC)
Density
Organization
Part Number
Composition
Compliance
Speed (Mbps)
Module Ranks
1GB
128Mx72
M391B2873DZ1-C(F8/H9)
1Gb (128M x8)*9
RoHS
1066/1333
1
2GB
256Mx72
M391B5673DZ1-C(F8/H9)
1Gb (128M x8)*18
RoHS
1066/1333
2
1GB
128Mx72
M391B2873EH1-C(F8/H9)
1Gb (128M x8)*9
RoHS & Halogen Free
1066/1333
1
2GB
256Mx72
M391B5673EH1-C(F8/H9)
1Gb (128M x8)*18
RoHS & Halogen Free
1066/1333
2
4GB
512Mx72
M391B5273BH1-C(F8/H9)
2Gb (256M x8)*18
RoHS & Halogen Free
1066/1333
2
4
DDR3 SDRAM
JANUARY 2009
www.samsung.com/semi/dram
Density
Organization
Part Number
# Pins - Package
Compliance
Speed (Mbps)
Package Dimensions
1Gb
256M x4
K4B1G0446D-HC(F7/F8/H9)
82 Ball -FBGA
RoHS & Halogen Free
800/1066/1333
9x11mm
1Gb
128M x8
K4B1G0846D-HC(F7/F8/H9)
82 Ball -FBGA
RoHS & Halogen Free
800/1066/1333
9x11mm
1Gb
64M x16
K4B1G1646D-HC(F7/F8/H9)
100 Ball -FBGA
RoHS & Halogen Free
800/1066/1333
9x13.3mm
1Gb
256M x4
K4B1G0446E-HC(F7/F8/H9)
78 Ball -FBGA
RoHS & Halogen Free
800/1066/1333
7.5x11mm
1Gb
128M x8
K4B1G0846E-HC(F7/F8/H9)
78 Ball -FBGA
RoHS & Halogen Free
800/1066/1333
7.5x11mm
1Gb
64M x16
K4B1G1646E-HC(F7/F8/H9)
96 Ball -FBGA
RoHS & Halogen Free
800/1066/1333
7.5x13.3mm
2Gb
512M x4
K4B2G0446B-HC(F7/F8/H9)
78 Ball -FBGA
RoHS & Halogen Free
800/1066/1333
9x11.5mm
2Gb
256M x8
K4B2G0846B-HC(F7/F8/H9)
78 Ball -FBGA
RoHS & Halogen Free
800/1066/1333
9x11.5mm
2Gb
128M x16
K4B2G1646B-HC(F7/F8/H9)
96 Ball -FBGA
RoHS & Halogen Free
800/1066/1333
9x13.3mm
Notes:
F7= DDR3-800 (6-6-6)
F8 = DDR3-1066 (7-7-7)
H9 = DDR3-1333 (9-9-9)
Voltage = 1.5V
DDR2 SDRAM REGISTERED MODULES
Module
Density
Organization
512MB
64Mx72
1GB
2GB
4GB
8GB
notes:
128Mx72
256Mx72
512Mx72
1Gx72
Part Number
Composition
Compliance
Parity
Speed (Mbps)
Register
Rank
Production
M393T6553GZA-C(E6/F7)
(64M x8)*9
Lead free
667/800
Y
1
Now
M393T6553GZ3-C(CC/D5)
(64M x8)*9
Lead free
400/533
N
1
Now
M393T2950GZA-C(E6/F7)
(128M x4)*18
Lead free
667/800
Y
1
Now
M393T2950GZ3-C(CC/D5)
(128M x4)*18
Lead free
400/533
N
1
Now
M393T2953GZA-C(E6/F7)
(64M x8)*18
Lead free
667/800
Y
2
Now
M393T2953GZ3-C(CC/D5)
(64M x8)*18
Lead free
400/533
N
2
Now
M393T2863QZA-C(E6/F7)
(128M x8)*9
Lead free
667/800
Y
1
Now
M393T2863EHA-C(E6/F7/E7)
(128M x8)*9
Lead free & Halogen free
667/800
Y
1
Jan`09
M393T5750GZA-C(E6/F7)
(128M x4)*36
Lead free
667/800
Y
2
Now
M393T5750GZ3-C(CC/D5)
(128M x4)*36
Lead free
400/533
N
2
Now
M393T5660QZA-C(E6/F7/E7)
(256M x4)*18
Lead free
667/800
Y
1
Now
M393T5660EHA-C(E6/F7/E7)
(256M x4)*18
Lead free & Halogen free
667/800
Y
1
Jan`09
M393T5663QZA-C(E6/F7/E7)
(128M x8)*18
Lead free
667/800
Y
2
Now
M393T5663EHA-C(E6/F7/E7)
(128M x8)*18
Lead free & Halogen free
667/800
Y
2
Jan`09
M393T5160QZA-C(E6/F7/E7)
(256M x4)*36
Lead free
667/800
Y
2
Now
M393T5160EHA-C(E6/F7/E7)
(256M x4)*36
Lead free & Halogen free
667/800
Y
2
Jan`09
M393T1G60QJA-C(D5/E6)
DDP (512M x4)*36
Lead free
533/667
Y
4
Now
M393T1G60EMA-C(D5/E6)
DDP (512M x4)*36
Lead free & Halogen free
533/667
Y
4
Jan`09
M393T1K66AZA-C(E6/F7)
st. (1G x4)*18
Lead free
667/800
Y
2
Now
CC=PC2-3200 (DDR2-400 @ CL=3)
E6=PC2-5300 (DDR2-667 @ CL=5)
F7=PC2-6400 (DDR2-800 @ CL=6)
E7=PC2-6400 (DDR2-800 @ CL=5)
D5=PC2-4200 (DDR2-533 @ CL=4)
Voltage = 1.8V
Module Height = 1.2"
www.samsung.com/semi/dram
JANUARY 2009
DDR3 & DDR2 SDRAM
5
D RAM
DDR3 SDRAM COMPONENTS
DDR2 SDRAM VLP REGISTERED MODULES
Module
Density
Organization
512MB
64Mx72
1GB
2GB
128Mx72
256Mx72
4GB
512Mx72
8GB
1Gx72
Part Number
Composition
Compliance
Parity
Speed (Mbps)
Register
Rank
Production
M392T6553GZA-C(E6/F7)
(64M x8)*9
Lead free
667/800
Y
1
Now
M392T2953GZA-C(E6/F7)
(64M x8)*18
Lead free
667/800
Y
2
Now
M392T2950GZA-C(E6/F7)
(128M x4)*18
Lead free
667/800
Y
1
Now
M392T2863QZA-C(E6/F7)
(128M x8)*9
Lead free
667/800
Y
1
Now
M392T2863EHA-C(E6/F7)
(128M x8)*9
Lead free & Halogen free
667/800
Y
1
Feb '09
M392T5660QZA-C(E6/F7)
(256M x4)*18
Lead free
667/800
Y
1
Now
M392T5660EHA-C(E6/F7)
(256M x4)*18
Lead free & Halogen free
667/800
Y
1
Feb '09
M392T5663QZA-C(E6/F7)
(128M x8)*18
Lead free
667/800
Y
2
Now
M392T5663EHA-C(E6/F7)
(128M x8)*18
Lead free & Halogen free
667/800
Y
2
Mar '09
M392T5160QJA-C(E6/F7)
DDP (512M x4)*18
Lead free
667/800
Y
2
Now
M392T5160EMA-C(E6/F7)
DDP (512M x4)*18
Lead free & Halogen free
667/800
Y
2
Mar '09
M392T1G60EEH-C(D5/E6)
QDP (1G x4)*18
Lead free & Halogen free
533/667
Y
4
Q2`09
DDR2 SDRAM FULLY BUFFERED MODULES
Module
Density
Organization
Part Number
Composition
Compliance
Speed (Mbps)
Voltage
Rank
Production
512MB
64Mx72
M395T6553GZ4-CE6/F7/E7(50/60)
(64M x8)*9
Lead free
667/800
1.8V
1
Now
1GB
2GB
4GB
8GB
NOTES:
6
128Mx72
256Mx72
512Mx72
1Gx72
M395T2953GZ4-CE6/F7/E7(50/60)
(64M x8)*18
Lead free
667/800
1.8V
2
Now
M395T2863QZ4-CE6/F7/E7(60/80/90)
(128M x8)*9
Lead free
667/800
1.8V
1
Now
M395T2863EH4-CE6/F7/E7(60/80/90)
(128M x8)*9
Lead free & Halogen free
667/800
1.8V
1
Jan`09
M395T2863QZ4-YE680
(128M x8)*9
Lead free
667
1.55V
1
Now
M395T2863EH4-YE6/F7(80)
(128M x8)*9
Lead free & Halogen free
667/800
1.55V
1
Mar`09
M395T5750GZ4-CE6/F7/E7(50/60)
(128M x4)*36
Lead free
667/800
1.8V
2
Now
M395T5663QZ4-CE6/F7/E7(60/80/90)
(128M x8)*18
Lead free
667/800
1.8V
2
Now
M395T5663EH4-C(E6/F7/E7)(60/80/90)
(128M x8)*18
Lead free & Halogen free
667/800
1.8V
2
Jan`09
M395T5663QZ4-YE680
(128M x8)*18
Lead free
667
1.55V
2
Now
M395T5663EH4-YE6/F7(80)
(128M x8)*18
Lead free & Halogen free
667/800
1.55V
2
Feb '09
M395T5160QZ4-CE6/F7/E7(60/80/90)
(256M x4)*36
Lead free
667/800
1.8V
2
Now
M395T5160EH4-C(E6/F7/E7)(60/80/90)
(256M x4)*36
Lead free & Halogen free
667/800
1.8V
2
Feb '09
M395T5160QZ4-YE680
(256M x4)*36
Lead free
667
1.55V
2
Now
M395T5160EH4-YE6/F7(80)
(256M x4)*36
Lead free & Halogen free
667/800
1.55V
2
Feb '09
M395T5163QZ4-CE6/F7/E7(80)
(128M x8)*36
Lead free
667/800
1.8V
4
Now
M395T5163EH4-CE6/F7/E7(80)
(128M x8)*36
Lead free & Halogen free
667/800
1.8V
4
Mar`09
M395T5163QZ4-YE680
(128M x8)*36
Lead free
667
1.55V
4
Now
M395T5163EH4-YE680
(128M x8)*36
Lead free & Halogen free
667
1.55V
4
Mar`09
M395T5263AZ4-CE6/F7(60/80)
(256M x8)*18
Lead free
667/800
1.8V
2
Now
M395T5263AZ4-YE680
(256M x8)*18
Lead free
667
1.55V
2
Now
M395T1G60QJ4-CE6/F7(80)
DDP (512M x4)*36
Lead free
667/800
1.8V
4
Now
M395T1G60EM4-CE6/F7(80)
DDP (512M x4)*36
Lead free & Halogen free
667/800
1.8V
4
Mar`09
M395T1G60QJ4-YE680
DDP (512M x4)*36
Lead free
667
1.55V
4
Now
M395T1G60EM4-YE680
DDP (512M x4)*36
Lead free & Halogen free
667
1.55V
4
Mar`09
M395T1K66AZ4-CE6/F7(60/80)
st. (1G x4)*18
Lead free
667/800
1.8V
2
Now
M395T1K66AZ4-YE680
st. (1G x4)*18
Lead free
667
1.55V
2
Now
50: Intel C1 AMB
60: IDT D1 AMB
80 : IDT L4 AMB
90: Montage D1 AMB
800 Speed option would be limited along with AMB type.
Module Height = 1.2"
C: AMB Voltage = 1.5V
C: DRAM Voltage = 1.8V
Y*: AMB Voltage = 1.5V (Available only with CE6)
Y*: DRAM Voltage = 1.55V (Available only with CE6)
DDR2 SDRAM
JANUARY 2009
www.samsung.com/semi/dram
Module
Density
Organization
512MB
64Mx64
1GB
128Mx64
Part Number
Composition
Compliance
Speed (Mbps)
Rank
Production
M378T6553GZS-C(E6/F7/E7)
(64M x8)*8
Lead free
667/800
1
Now
M378T6464QZ3-C(E6/F7/E7)
(64M x16)*4
Lead free
667/800
1
Now
M378T2953GZ3-C(E6/F7/E7)
(64M x8)*16
Lead free
667/800
2
Now
M378T2863QZS-C(E6/F7/E7)
(128M x8)*8
Lead free
667/800
1
Now
M378T2863EHS-C(E6/F7/E7)
(128M x8)*8
Lead free & Halogen free
667/800
1
Now
M378T5663QZ3-C(E6/F7/E7)
(128M x8)*16
Lead free
667/800
2
Now
M378T5663EH3-C(E6/F7/E7)
(128M x8)*16
Lead free & Halogen free
667/800
2
Now
M378T5263AZ3-C(E6/F7)
(256M x8)*16
Lead free
667/800
2
Now
2GB
256Mx64
4GB
512Mx64
NOTES:
E6=PC2-5300 (DDR2-667 @ CL=5)
E7=PC2-6400 (DDR2-800 @ CL=5)
F7=PC2-6400 (DDR2-800 @ CL=6)
Voltage = 1.8V
Module Height =1.2"
DDR2 SDRAM UNBUFFERED MODULES (ECC)
Module
Density
Organization
Part Number
Composition
Compliance
Speed (Mbps)
Rank
Production
512MB
64Mx72
M391T6553GZ3-C(E6/F7/E7)
(64M x8)*9
Lead free
667/800
1
Now
1GB
128Mx72
2GB
256Mx64
4GB
512Mx64
NOTES:
E6=PC2-5300 (DDR2-667 @ CL=5)
E7=PC2-6400 (DDR2-800 @ CL=5)
F7=PC2-6400 (DDR2-800 @ CL=6)
M391T2863QZ3-C(E6/F7/E7)
(128M x8)*9
Lead free
667/800
1
Now
M391T2863EH3-C(E6/F7/E7)
(128M x8)*9
Lead free & Halogen free
667/800
1
Jan '09
M391T5663QZ3-C(E6/F7/E7)
(128M x8)*18
Lead free
667/800
2
Now
M391T5663EH3-C(E6/F7/E7)
(128M x8)*18
Lead free & Halogen free
667/800
2
Jan '09
M391T5263AZ3-C(E6/F7)
(256M x8)*18
Lead free
667/800
2
Now
Speed (Mbps)
Rank
Production
Voltage = 1.8V
Module Height =1.2"
DDR2 SDRAM SODIMM MODULES
Module
Density
Organization
512MB
64Mx64
1GB
128Mx64
Part Number
Composition
Compliance
M470T6554GZ3-C(E6/F7/E7)
(32M x16)*8
Lead free
667/800
2
Now
M470T6464QZ3-C(E6/F7/E7)
(64M x16)*4
Lead free
667/800
1
Now
M470T2953GZ3-C(E6/F7/E7)
(64M x8)*16
Lead free
667/800
2
Now
M470T2864QZ3-C(E6/F7/E7)
(64M x16)*8
Lead free
667/800
2
Now
M470T2864EH3-C(E6/F7/E7)
(64M x16)*8
Lead free & Halogen free
667/800
2
Now
M470T5663QZ3-C(E6/F7/E7)
(128M x8)*8
Lead free
667/800
2
Now
M470T5663EH3-C(E6/F7/E7)
(128M x8)*8
Lead free & Halogen free
667/800
2
Now
M470T5267AZ3-C(E6/F7)
st.(512M x8)*8
Lead free
667/800
2
Now
2GB
256Mx64
4GB
512Mx64
NOTES:
E6=PC2-5300 (DDR2-667 @ CL=5)
E7=PC2-6400 (DDR2-800 @ CL=5)
F7=PC2-6400 (DDR2-800 @ CL=6)
www.samsung.com/semi/dram
Voltage = 1.8V
Module Height =1.2"
JANUARY 2009
DDR2 SDRAM
7
D RAM
DDR2 SDRAM UNBUFFERED MODULES
DDR2 SDRAM COMPONENTS
Density
Organization
Part Number
# Pins-Package
Dimensions
Package
Speed (Mbps)
Production
256Mb
16Mx16
K4T56163QI-ZC(E6/F7/E7)
84-FBGA
9x13mm
Lead free
667/800
Now
128M x4
K4T51043QG-HC(E6/F7/E7)
60-FBGA
10x11mm
Lead free & Halogen free
667/800
Now
512Mb
64M x8
K4T51083QG-HC(E6/F7/E7)
60-FBGA
10x11mm
Lead free & Halogen free
667/800
Now
32M x16
K4T51163QG-HC(E6/F7/E7/F8)
84-FBGA
11x13mm
Lead free & Halogen free
667/800/1066
Now
K4T1G044QQ-HC(E6/F7/E7)
68-FBGA
11x18mm
Lead free & Halogen free
667/800
Now
K4T1G044QE-HC(E6/F7/E7)
68-FBGA
11x18mm
Lead free & Halogen free
667/800
Jan'09
256M x4
1Gb
128M x8
NOTES:
68-FBGA
11x18mm
Lead free & Halogen free
667/800
Now
68-FBGA
11x18mm
Lead free & Halogen free
667/800
Now
K4T1G164QQ-HC(E6/F7/E7)
84-FBGA
11x18mm
Lead free & Halogen free
667/800
Now
K4T1G164QE-HC(E6/F7/E7/F8)
84-FBGA
11x18mm
Lead free & Halogen free
667/800/1066
Jan'09
512Mx4
K4T2G044QA-HC(E6/F7/E7)
68-FBGA
11x18mm
Lead free & Halogen free
667/800
Now
256Mx8
K4T2G084QA-HC(E6/F7/E7)
68-FBGA
11x18mm
Lead free & Halogen free
667/800
Now
64M x16
2Gb
K4T1G084QQ-HC(E6/F7/E7)
K4T1G084QE-HC(E6/F7/E7)
E6=DDR2-667 (5-5-5)
F7=DDR2-800 (6-6-6)
E7=DDR2-800 (5-5-5)
F8=DDR2-1066 (7-7-7)
Voltage = 1.8V
DDR SDRAM 1U REGISTERED MODULES
Module
Density
Organization
Part Number
Composition
Compliance
Speed (Mbps)
512Mb
64Mx72
M312L6523FH3-CCC/B0
(64M x8)*9
Lead-free
333/400
M312L2920FLS-CB0
(128M x4)*18
Lead-free
333/400
1Gb
128Mx72
M312L2923FH3-CCC/B0
(128M x8)*9
Lead-free
333/400
M312L2920FH3-CB3
(128M x4)*18
Lead-free
333/400
M312L5720FH3-CB3
(128M x4)*36
Lead-free
333/400
2Gb
256Mx72
NOTES:
B0 = DDR266 (133MHz @ CL=2.5)
A2 = DDR266 (133MHz @ Cl=2)
B3 = DDR333 (166MHz @ CL=2.5)
CC = DDR400 (200MHz @ CL=3)
Type: 184-pin
DDR SDRAM UNBUFFERED MODULES
Module
Density
Organization
Part Number
Composition
Compliance
Speed (Mbps)
512Mb
64MX64
M368L6523FLS-CCC/B3
(64M x8)*8
Lead-free & Halogen free
333/400
1Gb
128Mx64
M368L2923FLN-CCC/B3
(64M x8)*16
Lead-free & Halogen free
333/400
NOTES:
B0 = DDR266 (133MHz @ CL=2.5)
A2 = DDR266 (133MHz @ Cl=2)
B3 = DDR333 (166MHz @ CL=2.5)
CC = DDR400 (200MHz @ CL=3)
Package: 66TSOP lead-free and halogen-free
Voltage: 2.5V
DDR SDRAM SODIMM MODULES
Module
Density
Organization
Part Number
Composition
Compliance
Speed (Mbps)
512Mb
64MX64
M470L6524FL0-CB300
(32M x16)*8
Lead-free
333
1Gb
128Mx64
M470L2923F60-CB300
(64M x8)*16
Lead-free
333
NOTES:
B0 = DDR266 (133MHz @ CL=2.5)
CC = DDR400 (200MHz @ CL=3)
8
DDR2 & DDR SDRAM
B3 = DDR333 (166MHz @ CL=2.5)
A2 = DDR266 (133MHz @ Cl=2)
JANUARY 2009
www.samsung.com/semi/dram
Density
256Mb
Organization
Part Number
# Pins - Package
Speed (Mbps)
Notes
64Mx4
K4H560438J-LCB3/B0
66-TSOP
266/333
Halogen -free
32Mx8
K4H560838J-LCCC/B3
66-TSOP
333/400
Halogen -free
16Mx16
K4H561638J-LCCC/B3
66-TSOP
333/400
Halogen -free
128Mx4
512Mb
64Mx8
K4H510438F-LCB3/B0
66-TSOP
266/333
Halogen -free
K4H510438F-HCCC/B3
60-FBGA
333/400
Halogen -free
K4H510838F-LCCC/B3
66-TSOP
333/400
Halogen -free
K4H510838F-HCCC/B3
60-FBGA
333/400
Halogen -free
32Mx16
K4H511638F-LCCC/B3
66-TSOP
333/400
Halogen -free
128Mb
8Mx16
K4H281638L-LCCC/CD
66-TSOP
400/500
Halogen -free
NOTES:
B0 = DDR266 (133MHz @ CL=2.5)
A2 = DDR266 (133MHz @ Cl=2)
D RAM
DDR SDRAM COMPONENTS
B3 = DDR333 (166MHz @ CL=2.5)
CC = DDR400 (200MHz @ CL=3)
SDRAM COMPONENTS
Density
64Mb
128Mb
256Mb
Organization
Part Number
# Pins - Package
Speed (Mbps)
Refresh
Remarks
8Mx8
K4S640832N-UC(75)000
54-TSOP
133
4K
K-die changing to N-die
4Mx16
K4S641632N-UC(L)(75/60)000
54-TSOP
133/143/166
4K
K-die changing to N-die
16Mx8
K4S280832K-UC(L)(75)000
54-TSOP
133
4K
I-die changing to K-die
8Mx16
K4S281632K-UC(L)(75/60)000
54-TSOP
133/166
4K
I-die changing to K-die
64Mx4
K4S560432J-UC(L)(75)000
54-TSOP
133
8K
H-die changing to J-die
32Mx8
K4S560832J-UC(L)(75)000
54-TSOP
133
8K
H-die changing to J-die
16Mx16
K4S561632J-UC(L)(75/60)000
54-TSOP
133/166
8K
H-die changing to J-die
128Mx4
K4S510432D-UC(L)(75)000
54-TSOP
133
8K
512Mb
64Mx8
K4S510832D-UC(L)(75)000
54-TSOP
133
8K
32Mx16
K4S511632D-UC(L)(75)000
54-TSOP
133
8K
NOTES:
L = Commercial Temp., Low Power
For industrial temperature, check with SSI Marketing
Banks: 4
All products are lead free
Voltage: 3.3V
Speed: PC133 (133MHz CL=3/PC100 CL2)
RDRAM COMPONENTS
Density
Organization
Part Number
Speed (Mbps)
# Pins - Package
Refresh
288M
x18
K4R881869I-DC(M8/T9)
800/1066
92-FBGA
16K/32ms
NOTES:
Voltage: 2.5 V
All products are lead free
www.samsung.com/semi/dram
JANUARY 2009
DDR, SDRAM & RDRAM
9
Graphics DRAM Components
Type
GDDR5
Density
Organization
Part Number
# Pins - Package
VDD/VDDQ
Speed Bin (MHz)
Effective Speed
(Mbps)
512Mb
16Mx32
K4G52324FG
170-FBGA
1.5/1.5V
800/900/1000
3200/3600/4000
1Gb
32Mx32
K4G10324FE
170-FBGA
1.5/1.5V
900/1000/1250
3600/4000/5000
K4J10324QD
136-FBGA
1.8V/1.8V
700/800/900
1Gb
32Mx32
K4J10324QD
136-FBGA
1.85V/1.85V
1000
GDDR3
512Mb
gDDR3
1Gb
16Mx32
64Mx16
1Gb
64Mx16
512Mb
32Mx16
gDDR2
GDDR1
128Mb
4Mx32
8Mx16
NOTES:
10
(1) Package:
Lead Free or Halogen Free
Graphics DRAM
K4J10324QE
136-FBGA
1.8V/1.8V
700/800/1000/1200/1300
K4J52324QH
136-FBGA
1.8/1.8V
700/800
K4J52324QH
136-FBGA
1.9/1.9V
1000
K4J52324QH
136-FBGA
2.05/2.05V
1200
K4J52324QH
136-FBGA
2.05/2.05V
1300
Status
CS in 1Q'09
CS in Q2'09
K4J52324QI
136-FBGA
1.8/1.8V
700/800
CS in Q3'09
K4J52324QI
136-FBGA
1.9/1.9V
1000
CS in Q3'09
K4J52324QI
136-FBGA
2.05/2.05V
1200
CS in Q3'09
K4W1G1646D
100 FBGA
1.5/1.5V
667
K4W1G1646D
100 FBGA
1.8V/1.8V
800/900
K4W1G1646E
100 FBGA
1.5V/1.5V
800/900/1000
K4N1G164QQ
84-FBGA
1.8/1.8V
400/500
K4N1G164QE
84-FBGA
1.8/1.8V
400/500
K4N51163QG
84-FBGA
1.8/1.8V
400/500
K4N51163QZ
84-FBGA
1.8/1.8V
400/500
K4D263238K
144-FBGA
2.5/2.5V
200/250
K4D263238K
100-TQFP
2.5/2.5V
200/250
K4D261638K
66-TSOPII
2.5/2.5V
200/250
(2) Architecture:
4 Banks or 8 Banks
(3) Speeds
(clock cycle - speed bin):
04: 0.4ns(5.0Gbps)
05: 0.5ns(4Gbps)
5C: 0.555(3.6Gbps)
06: 0.625(3.2Gbps)
07: 0.71ns (2.8Gbps)
08: 0.83ns (2.4Gbps)
09: 0.90ns (2.2Gbps)
1A: 1ns (2Gbps)
11: 1.1ns (1.8Gbps)
12: 1.25ns (1.6Gbps)
14: 1.429ns (1.4Gbps)
16: 1.667ns (1.2Gbps)
20: 2.0ns (1Gbps)
22: 2.2ns (0.9Gbps)
25: 2.5ns (0.8Gbps)
2A: 2.86ns (0.7Gbps)
33: 3.3ns (0.6Gbps
40: 4.0ns (0.5Gbps)
50: 5.0ns (0.4Gbps)
JANUARY 2009
CS in Q1'09
www.samsung.com/semi/dram
Type
Density
Organization
MMSDRAM
512Mb
32M x16
MMSDDDR
512Mb
32M x16
MMSDRAM
512Mb
16M x32
Part Number
# Pins-Package
Refresh
Power
K4M51163PE-(1)(2)(3)(4)
54-FBGA
8K
1.8V
K4M51163PG-(1)(2)(3)(4)
54-FBGA
8K
1.8V
K4X51163PE-(1)(2)(3)(4)
60-FBGA
8K
1.8V
K4X51163PG-(1)(2)(3)(4)
60-FBGA
8K
1.8V
K4M51323PE-(1)(2)(3)(4)
54-FBGA
8K
1.8V
K4M51323PG-(1)(2)(3)(4)
90-FBGA
8K
1.8V
K4X51323PE-(1)(2)(3)(4)
54-FBGA
8K
1.8V
MMSDDDR
512Mb
16M x32
K4X51323PG-(1)(2)(3)(4)
90-FBGA
8K
1.8V
MMSDRAM
256Mb
16M x16
K4M56163PI-(1)(2)(3)(4)
54-FBGA
8K
1.8V
MMSDDDR
256Mb
16M x16
K4X56163PI-(1)(2)(3)(4)
60-FBGA
8K
1.8V
MMSDRAM
256Mb
8M x32
K4M56323PI-(1)(2)(3)(4)
90-FBGA
8K
1.8V
MMSDDDR
256Mb
8M x32
K4X56323PI-(1)(2)(3)(4)
90-FBGA
8K
1.8V
128Mb
8M x16
K4M28163PN-(1)(2)(3)(4)
54-FBGA
4K
1.8V
K4M641633K-(1)(2)(3)(4)
54-FBGA
4K
3.0V
K4M64163LK-(1)(2)(3)(4)
54-FBGA
4K
2.5V
MMSDRAM
64Mb
4M x16
64M x16
MMSDDDR
1Gb
32M x32
NOTES:
K4M64163PK-(1)(2)(3)(4)
54-FBGA
4K
1.8V
K4X1G153PE-(1)(2)(3)(4)
60-FBGA
8K
1.8V
K4X1G163PC-(1)(2)(3)(4)
60-FBGA
8K
1.8V
K4X1G163PQ-(1)(2)(3)(4)
60-FBGA
8K
1.8V
K4X1G323PC-(1)(2)(3)(4)
90-FBGA
8K
1.8V
K4X1G323PC-(1)(2)(3)(4)
152-FBGA
8K
1.8V
K4X1G323PD-(1)(2)(3)(4)
90-FBGA
8K
1.8V
K4X1G323PQ-(1)(2)(3)(4)
152-FBGA
8K
1.8V
8K
1.8V
2Gb
64M x32
K4X2G303PD-(1)(2)(3)(4)
(1) Package:
Mobile SDRAM
1 : POP
2 : 90-FBGA(DDP)
3 : 90-FBGA(DDP,LF)
4 : 96-FBGA
5 : 96-FBGA(LF)
6 : MCP(LF,HF)
9 : 90-FBGA(LF,OSP)
A : FBGA(LF,TDP)
B : 54-CSP(LF,HF)
D : 90-FBGA_L(LF,HF)
E : FBGA(LF,MCP)
F : 90-FBGA_S
G : LGA(LF)
H : 90-FBGA_S(LF,HF)J :
WBGA
K : 60-CSP(LF,HF,OSP)
L : 90-FBGA_SSD(LF,HF)
M : FBGA(MCP)
N : 54-CSP(LF,HF,OSP)
P : 54-CSP(LF,DDP)
Q : ISM
R : 54-FBGA
S : 90-FBGA_L
T : TSOP2-400
V : WBGA(LF)
Y : 54-CSP(DDP)
• It will be applied from each different generation by density.
(Halogen Free: 128Mb:14th, 256Mb:13th, 512Mb:8th,1Gb:5th generation)
Mobile DDR SDRAM
1 : MCP
2 : 90-FBGA(DDP)
3 : 90-FBGA(LF,DDP,HF)
4 : 96-FBGA
5 : 96-FBGA(LF,HF)
6 : FBGA(POP,LF,HF)
7 : 90-FBGA
8 : 90-FBGA(LF,HF)
9 : 110-FBGA(LF,HF)
A : 168-FBGA(LF,HF,DDP)
F : 60-FBGA(LF,HF)
G : 60-LGA(LF)
K : 104-FBGA(LF,HF)
L : WBGA(0.8MM)
(2) Temp & Power:
C: Commercial (-25 ~ 70’C), Normal
L: Commercial, Low, i-TCSR
F: Commercial, Low, i-TCSR & PASR & DS
E: Extended (-25~85’C), Normal
N: Extended, Low, i-TCSR
G: Extended, Low, i-TCSR & PASR & DS
I: Industrial (-40~85’C), Normal
P: Industrial, Low
H: Industrial, Low, i-TCSR & PASR & DS
D RAM
Mobile SDRAM Components
(3)-(4) Speed:
Mobile-SDRAM
60: 166MHz, CL 3
75: 133MHz, CL 3
80: 125MHz, CL 3
1H: 105MHz, CL 2
1L: 105MHz, CL 3
15: 66MHz, CL 2 & 3
Mobile-DDR
C3: 133MHz, CL 3
C2: 100MHz, CL 3
C0: 66MHz, CL 3
M : 152-FBGA(POP,HF,LF)
N : 168-FBGA(LF,POP,HF)
P : 60-FBGA(LF,DDP,HF)
Q : ISM
R : 102-FBGA(HF,LF)
S : POP(DDP)
• It will be applied from each different generation by density.
(Halogen Free: 128Mb:14th, 256Mb:13th, 512Mb:8th,1Gb:5th generation)
Mobile DDR
SDRAM PEA
1 : POP MONO
6 : POP MONO(LF,HF)
7 : 90-FBGA
8 : 90-FBGA(LF)
A : FBGA(LF,TDP)
F : 60-FBGA(LF)
H : ISM
(10X10mm,1-side)
K : 72-FBGA(LF)
L : 60-FBGA
M : POP-SAC105(LF,DDP)
Q : ISM
S : POP(DDP)
X : POP(LF,DDP,HF)
• It will be applied from each different generation by density.
(Halogen Free: 128Mb:14th, 256Mb:13th, 512Mb:8th,1Gb:5th generation)
www.samsung.com/semi/dram
JANUARY 2009
Mobile SDRAM
11
COMPONENT DRAM ORDERING INFORMATION
1
2
3
4
5
6
7
8
9
10
11
K
4
T
XX
XX
X
X
X
X
X
XX
Speed
Temp & Power
Package Type
Revision
Interface (VDD, VDDQ)
Number of Internal Banks
SAMSUNG Memory
DRAM
DRAM Type
Density
Bit Organization
1. Memory (K)
2. DRAM: 4
3. DRAM Type
B: DDR3 SDRAM
D: GDDR SDRAM
G: GDDR5 SDRAM
H: DDR SDRAM
J: GDDR3 SDRAM
M: Mobile SDRAM
N: gDDR2 SDRAM
S: SDRAM
T: DDR SDRAM
U: GDDR4 SDRAM
V: Mobile DDR SDRAM Power Efficient Address
W: gDDR3 SDRAM
X: Mobile DDR SDRAM
Y: XDR DRAM
Z: Value Added DRAM
4. Density
10: 1G, 8K/32ms
16: 16M, 4K/64ms
26: 128M, 4K/32ms
28: 128M, 4K/64ms
32: 32M, 2K/32ms
50: 512M, 32K/16ms
51: 512M, 8K/64ms
52: 512M, 8K/32ms
54: 256M, 16K/16ms
55: 256M, 4K/32ms
56: 256M, 8K/64ms
62: 64M, 2K/16ms
64: 64M, 4K/64ms
68: 768M, 8K/64ms
1G: 1G, 8K/64ms
2G: 2G, 8K/64ms
4G: 4G, 8K/64ms
5. Bit Organization
02: x2
04: x4
06: x4 Stack (Flexframe)
07: x8 Stack (Flexframe)
12
DRAM Ordering Information
08: x8
15: x16 (2CS)
16: x16
26: x4 Stack (JEDEC Standard)
27: x8 Stack (JEDEC Standard)
30: x32 (2CS, 2CKE)
31: x32 (2CS)
32: x32
6. # of Internal Banks
2: 2 Banks
3: 4 Banks
4: 8 Banks
5: 16 Banks
7. Interface ( VDD, VDDQ)
2: LVTTL, 3.3V, 3.3V
4: LVTTL, 2.5V, 2.5V
5: SSTL-2 1.8V, 1.8V
6: SSTL-15 1.5V, 1.5V
8: SSTL-2, 2.5V, 2.5V
A: SSTL, 2.5V, 1.8V
F: POD-15 (1.5V,1.5V)
H: SSTL_2 DLL, 3.3V, 2.5V
M: LVTTL, 1.8V, 1.5V
N: LVTTL, 1.5V, 1.5V
P: LVTTL, 1.8V, 1.8V
Q: SSTL-2 1.8V, 1.8V
R: SSTL-2, 2.8V, 2.8V
U: DRSL, 1.8V, 1.2V
9. Package Type
DDR SDRAM
L: TSOP II (Lead-free & Halogen-free)
H: FBGA (Lead-free & Halogen-free)
F: FBGA for 64Mb DDR (Lead-free & Halogenfree)
6: sTSOP II (Lead-free & Halogen-free)
T: TSOP II
N: sTSOP II
G: FBGA
U: TSOP II (Lead-free)
V: sTSOP II (Lead-free)
Z: FBGA (Lead-free)
DDR2 SDRAM
Z: FBGA (Lead-free)
J: FBGA DDP (Lead-free)
Q: FBGA QDP (Lead-free)
H: FBGA (Lead-free & Halogen-free)
M: FBGA DDP (Lead-free & Halogen-free)
E: FBGA QDP (Lead-free & Halogen-free)
T: FBGA DSP (Lead-free & Halogen-free, Thin)
DDR3 SDRAM
Z: FBGA (Lead-free)
H: FBGA (Halogen-free & Lead-free)
Graphics Memory
Q: TQFP
U: TQFP (Lead Free)
G: 84/144 FBGA
V: 144 FBGA (Lead Free)
Z: 84 FBGA(Lead Free)
T: TSOP
L: TSOP (Lead Free)
A: 136 FBGA
B: 136 FBGA(Lead Free)
H: FBGA(Hologen Free & Lead Free)
E: 100 FBGA(Hologen Free & Lead Free)
8. Revision
A: 2nd Generation
B: 3rd Generation
C: 4th Generation
D: 5th Generation
E: 6th Generation
F: 7th Generation
G: 8th Generation
H: 9th Generation
I: 10th Generation
J: 11th Generation
K: 12th Generation
M: 1st Generation
N: 14th Generation
Q: 17th Generation
SDRAM
L TSOP II (Lead-free & Halogen-free)
N: STSOP II
T: TSOP II
U: TSOP II (Lead-free)
V: sTSOP II (Lead-free)
JANUARY 2009
www.samsung.com/semi/dram
1
2
3
4
5
6
7
8
9
10
11
K
4
T
XX
XX
X
X
X
X
X
XX
Speed
Temp & Power
Package Type
Revision
Interface (VDD, VDDQ)
Number of Internal Banks
SAMSUNG Memory
DRAM
DRAM Type
Density
Bit Organization
XDR DRAM
J: BOC(LF) P: BOC
Mobile DRAM
Leaded / Lead Free
G/A: 52balls FBGA Mono
R/B: 54balls FBGA Mono
X /Z: 54balls BOC Mono
J /V: 60(72)balls FBGA Mono 0.5pitch
L /F: 60balls FBGA Mono 0.8pitch
S/D: 90balls FBGA
Monolithic (11mm x 13mm)
F/H: Smaller 90balls FBGA Mono
Y/P: 54balls CSP DDP
M/E: 90balls FBGA DDP
10. Temp & Power - COMMON
(Temp, Power)
C: Commercial, Normal (0’C – 95’C) & Normal
Power
C: (Mobile Only) Commercial (-25 ~ 70’C),
Normal Power
J: Commercial, Medium
L: Commercial, Low (0’C – 95’C) & Low Power
L: (Mobile Only) Commercial, Low, i-TCSR
F: Commercial, Low, i-TCSR & PASR & DS
E: Extended (-25~85’C), Normal
N: Extended, Low, i-TCSR
G: Extended, Low, i-TCSR & PASR & DS
I: Industrial, Normal (-40’C – 85’C) & Normal
Power
P: Industrial, Low (-40’C – 85’C) & Low Power
H: Industrial, Low, i-TCSR & PASR & DS
11. Speed (Wafer/Chip Biz/BGD: 00)
DDR SDRAM
CC: DDR400 (200MHz @ CL=3, tRCD=3, tRP=3)
B3: DDR333 (166MHz @ CL=2.5, tRCD=3,
tRP=3) *1
A2: DDR266 (133MHz @ CL=2 , tRCD=3, tRP=3)
B0: DDR266 (133MHz @ CL=2.5, tRCD=3,
tRP=3)
Note 1: "B3" has compatibility with "A2" and "B0"
www.samsung.com/semi/dram
D RAM
COMPONENT DRAM ORDERING INFORMATION
DDR2 SDRAM
CC: DDR2-400 (200MHz @ CL=3, tRCD=3,
tRP=3)
D5: DDR2-533 (266MHz @ CL=4, tRCD=4,
tRP=4)
E6: DDR2-667 (333MHz @ CL=5, tRCD=5,
tRP=5)
F7: DDR2-800 (400MHz @ CL=6, tRCD=6,
tRP=6)
E7: DDR2-800 (400MHz @ CL=5, tRCD=5,
tRP=5)
1 : 1.1ns (900MHz)
55: 5.5ns (183MHz)
12: 1.25ns (800MHz)
60: 6.0ns (166MHz)
14: 1.4ns (700MHz)
16: 1.6ns (600MHz)
DDR3 SDRAM
F7: DDR3-800 (400MHz @ CL=6, tRCD=6,
tRP=6)
F8: DDR3-1066 (533MHz @ CL=7, tRCD=7,
tRP=7)
G8: DDR3-1066 (533MHz @ CL=8, tRCD=8,
tRP=8)
H9: DDR3-1333 (667MHz @ CL=9, tRCD=9,
tRP=9)
K0: DDR3-1600 (800MHz @ CL=11, tRCD=11,
tRP=11)
XDR DRAM
A2: 2.4Gbps, 36ns, 16Cycles
B3: 3.2Gbps, 35ns, 20Cycles
C3: 3.2Gbps, 35ns, 24Cycles
C4: 4.0Gbps, 28ns, 24Cycles
DS: Daisychain Sample
Graphics Memory
18: 1.8ns (550MHz)
04: 0.4ns (2500MHz)
20: 2.0ns (500MHz)
05: 0.5ns (2000MHz)
22: 2.2ns (450MHz)
5C: 0.56ns (1800MHz)
25: 2.5ns (400MHz)
06: 0.62ns (1600MHz)
2C: 2.66ns (375MHz)
6A: 0.66ns (1500MHz)
2A: 2.86ns (350MHz)
07: 0.71ns (1400MHz)
33: 3.3ns (300MHz)
7A: 0.77ns (1300MHz)
36: 3.6ns (275MHz)
08: 0.8ns (1200MHz)
40: 4.0ns (250MHz)
09: 0.9ns (1100MHz)
45: 4.5ns (222MHz)
1 : 1.0ns (1000MHz)
50/5A: 5.0ns (200MHz)
JANUARY 2009
SDRAM (Default CL=3)
50: 5.0ns (200MHz CL=3)
60: 6.0ns (166MHz CL=3)
67: 6.7ns
75: 7.5ns PC133 (133MHz CL=3)
Mobile-SDRAM
60: 166MHz, CL 3
75: 133MHz, CL 3
80: 125MHz, CL 3
1H: 105MHz, CL 2
1L: 105MHz, CL 3
15: 66MHz, CL 2 & 3
Mobile-DDR
C3: 133MHz, CL 3
C2: 100MHz, CL 3
C0: 66MHz, CL 3
Note: All of Lead-free or Halogen-free product are in
compliance with RoHS
DRAM Ordering Information
13
Module DRAM Ordering Information
1
2
3
4
5
6
7
8
9
10
11
12
13
M
X
XX
T
XX
X
X
X
X
X
X
XX
X
AMB Vendor
Speed
Temp & Power
PCB Revision
Package
Component Revision
SAMSUNG Memory
DIMM
Data bits
DRAM Component Type
Depth
Number of Banks
Bit Organization
1. Memory Module: M
2. DIMM Type
3: DIMM
4: SODIMM
3. Data bits
12: x72 184pin Low Profile Registered DIMM
63: x63 PC100 / PC133 μSODIMM with SPD for
144pin
64: x64 PC100 / PC133 SODIMM with SPD for
144pin (Intel/JEDEC)
66: x64 Unbuffered DIMM with SPD for
144pin/168pin (Intel/JEDEC)
68: x64 184pin Unbuffered DIMM
70: x64 200pin Unbuffered SODIMM
71: x64 204pin Unbuffered SODIMM
74: x72 /ECC Unbuffered DIMM with SPD for
168pin (Intel/JEDEC)
77: x72 /ECC PLL + Register DIMM with SPD for
168pin (Intel PC100)
78: x64 240pin Unbuffered DIMM
81: x72 184pin ECC unbuffered DIMM
83: x72 184pin Registered DIMM
90: x72 /ECC PLL + Register DIMM
91: x72 240pin ECC unbuffered DIMM
92: x72 240pin VLP Registered DIMM
93: x72 240pin Registered DIMM
95: x72 240pin Fully Buffered DIMM with SPD for
168pin (JEDEC PC133)
4. DRAM Component Type
B: DDR3 SDRAM (1.5V VDD)
L: DDR SDRAM (2.5V VDD)
S: SDRAM
T: DDR2 SDRAM (1.8V VDD)
5. Depth
9. Package
09: 8M (for 128Mb/512Mb)
17: 16M (for 128Mb/512Mb)
16: 16M
28: 128M
29: 128M (for 128Mb/512Mb)
32: 32M
33: 32M (for 128Mb/512Mb)
51: 512M
52: 512M (for 512Mb/2Gb)
56: 256M
57: 256M (for 512Mb/2Gb)
59: 256M (for 128Mb/512Mb)
64: 64M
65: 64M (for 128Mb/512Mb)
1G: 1G
1K: 1G (for 2Gb)
6. # of Banks in Comp. & Interface
1: 4K/64mxRef., 4Banks & SSTL-2
2 : 8K/ 64ms Ref., 4Banks & SSTL-2
2: 4K/ 64ms Ref., 4Banks & LVTTL (SDR Only)
5: 8K/ 64ms Ref., 4Banks & LVTTL (SDR Only)
5: 4Banks & SSTL-1.8V
6: 8Banks & SSTL-1.8V
7. Bit Organization
0: x 4
3: x 8
4: x16
6: x 4 Stack (JEDEC Standard)
7: x 8 Stack (JEDEC Standard)
8: x 4 Stack
9: x 8 Stack
8. Component Revision
A: 2nd Gen.
B: 3rd Gen.
C: 4th Gen.
D: 5th Gen.
E: 6th Gen.
F: 7th Gen.
G: 8th Gen.
M: 1st Gen.
Q: 17th Gen.
14
DRAM Ordering Information
E: FBGA QDP (Lead-free & Halogen-free)
G: FBGA
H: FBGA (Lead-free & Halogen-free)
J: FBGA DDP (Lead-free)
M: FBGA DDP (Lead-free & Halogen-free)
N: sTSOP
Q: FBGA QDP (Lead-free)
T: TSOP II (400mil)
U: TSOP II (Lead-Free)
V: sTSOP II (Lead-Free)
Z: FBGA(Lead-free)
10. PCB Revision
0: Mother PCB
1: 1st Rev
2: 2nd Rev.
3: 3rd Rev.
4: 4th Rev.
A: Parity DIMM
S: Reduced PCB
U: Low Profile DIMM
11. Temp & Power
C: Commercial Temp. (0°C ~ 95°C) & Normal
Power
L: Commercial Temp. (0°C ~ 95°C) & Low Power
12. Speed
CC: (200MHz @ CL=3, tRCD=3, tRP=3)
D5: (266MHz @ CL=4, tRCD=4, tRP=4)
E6: (333MHz @ CL=5, tRCD=5, tRP=5)
F7: (400MHz @ CL=6, tRCD=6, tRP=6)
E7: (400MHz @ CL=5, tRCD=5, tRP=5)
F8: (533MHz @ CL=7, tRCD=7, tRP=7)
G8: (533MHz @ CL=8, tRCD=8, tRP=8)
H9: (667MHz @ CL=9, tRCD=9, tRP=9)
K0: (800MHz @ CL=10, tRCD=10, tRP=10)
7A: (133MHz CL=3/PC100 CL2)
13. AMB Vendor for FBDIMM
0, 5: Intel
1, 6, 8: IDT
9: Montage
Note: All of Lead-free or Halogen-free product are in
compliance with RoHS
JANUARY 2009
www.samsung.com/semi/dram
MLC NAND Flash
MOQ
Density
Technology
4Gb based
4Gb mono
T/R
-xxxx0xx
-xxx0Txx
x8
3.3
960
1,000
x8
3.3
960
1,000
K9HCG08U1M-PCB0
TSOP1
x8
3.3
960
1,000
K9HCG08U1M-IIB0
ULGA
x8
3.3
960
1,000
K9LBG08U0M-PCB0
TSOP1
x8
3.3
960
1,000
K9LBG08U1M-IIB0
ULGA
x8
3.3
720
2,000
K9GAG08U0M-PCB0
TSOP1
x8
3.3
960
1,000
K9GAG08U0M-IIB0
ULGA
x8
3.3
720
2,000
59nm
K9HBG08U1B-PCB0
TSOP1
x8
3.3
960
1,000
51nm
K9LAG08U0A-PCB0
TSOP1
x8
3.3
960
1,000
59nm
K9LAG08U0B-PCB0
TSOP1
x8
3.3
960
1,000
K9G8G08U0A-PCB0
TSOP1
x8
3.3
960
1,000
16Gb mono
8Gb mono
Tray
WELP
32Gb DDP
16Gb DDP
Vol(V)
TSOP1
51nm
8Gb Based
2KByte/Page
W/O Cache
Org.
K9MDG08U5M-ZCB0
64Gb QDP
32Gb QDP
Package Type
K9MDG08U5M-PCB0
128Gb DSP
16Gb based
4KByte/Page
Cache
Part Number
51nm
K9G8G08U0A-IIB0
ULGA
x8
3.3
960
2,000
59nm
K9G8G08U0B-PCB0
TSOP1
x8
3.3
960
1,000
63nm
K9G4G08U0A-PCB0
TSOP1
x8
3.3
960
1,000
51nm
K9G4G08U0B-PCB0
TSOP1
x8
3.3
960
1,000
Remarks
2CE
FLASH
Family
qualify B-die part
# K9LAG08U0BPCB0000
qualify B-die, part
# K9G8G08U0BPCB0000
qualify B-die, part
# K9G4G08U0BPCB0000
Please contact your local Samsung sales representative for latest product offerings.
Note: All parts are lead free
www.samsung.com/semi/flash
JANUARY 2009
MLC NAND Flash
15
SLC NAND Flash
Family
Density
Tech
64Gb DSP
32Gb QDP
8Gb Based
4KB/page
16Gb DDP
51nm
8G mono
63nm
16Gb QDP
59nm
63nm
4Gb Based
2KB/page
8Gb DDP
59nm
63nm
4Gb
59nm
Part Number
Package
Type
MOQ
Org.
Vol(V)
Tray
T/R
-xxxx0xx
-xxx0Txx
K9NCG08U5M-PCB0
TSOP1
x8
3.3
960
1,000
K9WBG08U1M-PCB0
TSOP1
x8
3.3
960
1,000
K9WBG08U1M-PIB0
TSOP1
x8
3.3
960
1,000
K9KAG08U0M-PCB0
TSOP1
x8
3.3
960
1,000
K9KAG08U0M-PIB0
TSOP1
x8
3.3
960
1,000
K9F8G08U0M-PCB0
TSOP1
x8
3.3
960
1,000
K9F8G08U0M-PIB0
TSOP1
x8
3.3
960
1,000
K9WAG08U1A-PCB0
TSOP1
x8
3.3
960
1,000
qualify 59nm B-die: K9WAG08U1B-PCB0000;
A-die EOL:LTBO due Dec'08
K9WAG08U1A-PIB0
TSOP1
x8
3.3
960
1,000
qualify 59nm B-die: K9WAG08U1B-PIB0000;
A-die EOL: LTBO due Dec'08
K9WAG08U1A-IIB0
ULGA
x8
3.3
960
2,000
A-die EOL: LTBO due Dec'08
K9WAG08U1B-PCB0
TSOP1
x8
3.3
960
1,000
K9WAG08U1B-PIB0
TSOP1
x8
3.3
960
1,000
K9WAG08U1B-KIB0
ULGA HF & LF
x8
3.3
960
2,000
K9K8G08U0A-PCB0
TSOP1
x8
3.3
960
1,000
qualify 59nm B-die: K9K8G08U0B-PCB0000;
A-die EOL: LTBO due Dec'08
K9K8G08U0A-PIB0
TSOP1
x8
3.3
960
1,000
qualify 59nm B-die: K9K8G08U0B-PIB0000;
A-die EOL: LTBO due Dec'08
A-die EOL/LTBO due Dec'08
K9K8G08U1A-IIB0
ULGA
x8
3.3
960
2,000
K9K8G08U0B-PCB0
TSOP1
x8
3.3
960
1,000
K9K8G08U0B-PIB0
TSOP1
x8
3.3
960
1,000
K9K8G08U1B-KIB0
ULGA HF & LF
x8
3.3
960
2,000
K9F4G08U0A-PCB0
TSOP1
x8
3.3
960
1,000
qualify 59nm B-die: K9F4G08U0B-PCB0000;
A-die EOL: LTBO due Dec'08
K9F4G08U0A-PIB0
TSOP1
x8
3.3
960
1,000
qualify 59nm B-die: K9F4G08U0B-PIB0000;
A-die EOL: LTBO due Dec'08
A-die EOL: LTBO due Dec'08
K9F4G08U0A-IIB0
ULGA
x8
3.3
960
2,000
K9F4G08U0B-PCB0
TSOP1
x8
3.3
960
1,000
K9F4G08U0B-PIB0
TSOP1
x8
3.3
960
1,000
K9F4G08U0B-KIB0
ULGA HF & LF
x8
3.3
960
2,000
K9F2G08U0A-PCB0
TSOP1
x8
3.3
960
1,000
qualify 59nm B-die: K9F2G08U0B-PCB0000;
A-die EOL: LTBO due Dec'08
K9F2G08U0A-PIB0
TSOP1
x8
3.3
960
1,000
qualify 59nm B-die: K9F2G08U0B-PIB0000;
A-die EOL: LTBO due Dec'08
63nm
2Gb
2Gb
59nm
63nm
1Gb
1Gb
59nm
512Mb
256Mb
512Mb
256Mb
63nm
90nm
K9F2G08U0B-PCB0
TSOP1
x8
3.3
960
1,000
K9F2G08U0B-PIB0
TSOP1
x8
3.3
960
1,000
K9F1G08U0B-PCB0
TSOP1
x8
3.3
960
1,000
59nm C-die coming Oct'08: K9F1G08U0CPCB0000; B-die EOL: LTBO due Mar'09
K9F1G08U0B-PIB0
TSOP1
x8
3.3
960
1,000
59nm C-die coming Oct'08: K9F1G08U0CPIB0000;
B-die EOL: LTBO due Mar'09
1.8v B-die supported through 2009
K9F1G08R0B-JIB0
63 FBGA(9.5x12)
x8
1.8
1,120
2,000
K9F1G08U0C-PCB0
TSOP1
x8
3.3
960
1,000
K9F1G08U0C-PIB0
TSOP1
x8
3.3
960
1,000
K9F1208U0C-PCB0
TSOP1
x8
3.3
960
1,000
K9F1208U0C-PIB0
TSOP1
x8
3.3
960
1,000
K9F1208R0C-JIB0
63 FBGA(8.5x13)
x8
1.8
1,120
2,000
K9F1208U0C-JIB0
63 FBGA(8.5x13)
x8
3.3
1,120
2,000
K9F5608U0D-PCB0
TSOP1
x8
3.3
960
1,000
K9F5608U0D-PIB0
TSOP1
x8
3.3
1,000
1,000
K9F5608R0D-JIB0
63 FBGA(9x11)
x8
1.8
1,280
2,000
K9F5608U0D-JIB0
63 FBGA(9x11)
3.3
1,280
2,000
Please contact your local Samsung sales representative for latest product offerings.
16
SLC NAND Flash
Remarks
Note: All parts are lead free
JANUARY 2009
www.samsung.com/semi/flash
Solid State Drives (ssd)*
Interface
SATA II
SLC
3.0Gb/sec
PC/Notebook
PS410
PM410
SATA II
MLC
3.0Gb/sec
Size
Connector
1.8"
Thin uSATA
2.5"
Thin SATA
SLIM
(caseless)
uSATA
1.8"
Thin uSATA
2.5"
Thin SATA
SLIM
(caseless)
uSATA
2.5"
Server/Storage
32GB
64GB
32GB
64GB
32GB
64GB
64GB
128GB
64GB
Comp.
8Gb
8Gb
8Gb
16Gb
16Gb
128GB
64GB
128GB
Thin SATA
128GB
16Gb
uSATA
SS410
2.5"
Thin SATA
SS415
2.5"
Thin SATA
SS800
2.5"
Thin SATA
UM410
HALF SLIM
Thin SATA
64GB
128GB
25GB
50GB
50GB
64GB
50GB
100GB
16Gb
SATA II MLC
16GB
32GB
MCCOE64G8MPP-0VA00
MCBQE32G5MPP-0VA00
MCCOE64G5MPP-0VA00
MCBQE32GFMPP-MVA00
MCBQE64GFMPP-MVA00
MMCRE64G8MPP-0VA00
MMCQE28G8MUP-0VA00
MMCRE64G5MPP-0VA00
MMCRE64GFMPP-MVA00
MMCQE28GFMPP-MVA00
MMCRE28G5MXP-0VB00
MMDOE56G5MXP-0VB00
16Gb
8Gb
8Gb
8Gb
8GB
UMPC/Low-Cost PC
MCBQE32G8MPP-0VA00
MMCRE64G5MXP-0VB00
256GB
SLIM
(caseless)
Part Number
MMDOE28G5MPP-0VA00
64GB
PM800
SATA II
3.0Gb/sec
SLC
Den.
FLASH
Application
MMCRE64GFMXP-MVB00
MMCRE28GFMXP-MVB00
MCBQE25G5MPQ-0VA03
MCCOE50G5MPQ-0VA03
MCBQE32G5MPQ-0VA03
MCCOE64G5MPQ-0VA03
MCBQE50G5MXP-0VB03
MCCOE00G5MXP-0VB03
MMAGE08GSMPP-MVA00
16Gb
MMBRE16GSMPP-MVA00
MMCRE32GSMPP-MVA00
*Please contact Marketing for the latest offerings.
www.samsung.com/semi/flash
JANUARY 2009
SSD
17
SD and MicroSD Flash Cards
Flash Cards
Type
Density
1GB
Component
Family
8Gb MLC
Ver.
B-die
2GB
SD
4GB
16G MLC
M-die
8GB
512MB
1GB
MicroSD
(without adapter)
2GB
4GB
8GB
4Gb MLC
A-die
Controller
Manuf. Site
Part Number
SKYMEDI
STS
MM8GF01GWBCA-2MA00
SKYMEDI
STS
MMAGF02GWMCA-2NA00
SKYMEDI
STS
MMAGF04GWMCA-2NA00
SKYMEDI
STS
MMAGF08GWMCA-2NA00
SMI
STS
MM4GR512UACA-2PA00
SMI
ATP
MM4GR512UACU-2PA00
SMI
SPIL
MM4GR512UACY-2PA00
SKYMEDI
SPIL
MM8GR01GUBCY-2MA00
SKYMEDI
STS
MM8GR01GUBCA-2MA00
SKYMEDI
SPIL
MM8GR02GUBCY-2MA00
SKYMEDI
STS
MM8GR02GUBCA-2MA00
8Gb MLC
B-die
8Gb MLC
B-die
16G MLC
M-die
SKYMEDI
STS
MMAGR02GUDCA-2MA00
8Gb MLC
B-die
SKYMEDI
SPIL
MM8GR04GUBCY-2MA00
16G MLC
M-die
SKYMEDI
STS
MMAGR04GUDCA-2MA00
16G MLC
M-die
SKYMEDI
STS
MMAGR08GUDCA-2MA00
MOQ
135
600
Please contact your local Samsung sales representative for latest product offerings.
Note: All parts are lead free.
18
Flash Cards
JANUARY 2009
www.samsung.com/semi/flash
FLASH Product Ordering Information
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
K
9
X
X
X
X
X
X
X
X
-
X
X
X
X
1. Memory (K)
2. NAND Flash : 9
3. Small Classification
(SLC : Single Level Cell, MLC : Multi Level Cell)
7 : SLC moviNAND
8 : MLC moviNAND
F : SLC Normal
G : MLC Normal
H : MLC QDP
K : SLC DDP
L : MLC DDP
M : MLC DSP
N : SLC DSP
P : MLC 8 Die Stack
Q : SLC 8 Die Stack
S : SLC Single SM
T : SLC SINGLE (S/B)
U : 2 Stack MSP
W : SLC 4 Die Stack
4~5. Density
12 : 512M
56 : 256M
1G : 1G
2G : 2G
4G : 4G
8G : 8G
AG : 16G BG :
32G CG : 64G
DG : 128G
EG : 256G
LG : 24G
NG : 96G
ZG : 48G
00 : NONE
6~7. Organization
00 : NONE
08 : x8
16 : x16
www.samsung.com/semi/flash
8. Vcc
A : 1.65V~3.6V B : 2.7V (2.5V~2.9V)
C : 5.0V (4.5V~5.5V)
D : 2.65V (2.4V~2.9V)
E : 2.3V~3.6V R : 1.8V (1.65V~1.95V)
Q : 1.8V (1.7V~1.95V) T : 2.4V~3.0V
U : 2.7V~3.6V V : 3.3V (3.0V~3.6V)
W : 2.7V~5.5V, 3.0V~5.5V 0 : NONE
9. Mode
0 : Normal
1 : Dual nCE & Dual R/nB
3 : Tri /CE & Tri R/B
4 : Quad nCE & Single R/nB
5 : Quad nCE & Quad R/nB
9 : 1st block OTP
A : Mask Option 1
L : Low grade
FLASH
Pre-Program Version
Customer Bad Block
Temp
Package
--Generation
Mode
SAMSUNG Memory
NAND Flash
Small Classification
Density
Density
Organization
Organization
Vcc
13. Temp
C : Commercial I : Industrial
0 : NONE (Containing Wafer, CHIP, BIZ, Exception
handling code)
14. Customer Bad Block
B : Include Bad Block
D : Daisychain Sample
L : 1~5 Bad Block
N : ini. 0 blk, add. 10 blk
S : All Good Block
0 : NONE (Containing Wafer, CHIP, BIZ, Exception
handling code)
15. Pre-Program Version
0 : None
Serial (1~9, A~Z)
10. Generation
M : 1st Generation
A : 2nd Generation
B : 3rd Generation
C : 4th Generation
D : 5th Generation
11. “ ----”
12. Package
A : COB
B : FBGA (Halogen-Free, Lead-Free)
C : CHIP BIZ D : 63-TBGA
F : WSOP (Lead-Free) G : FBGA
H : TBGA (Lead-Free)
I : ULGA (Lead-Free) (12*17)
J : FBGA (Lead-Free)
L : ULGA (Lead-Free) (14*18)
M : TLGA N : TLGA2
P : TSOP1 (Lead-Free)
Q : TSOP2 (Lead-Free)
S : TSOP1 (Halogen-Free, Lead-Free)
T : TSOP2 U : COB (MMC)
V : WSOP W : Wafer
Y : TSOP1 Z : WELP (Lead-Free)
JANUARY 2009
Flash Ordering Information
19
low power Asynchronous SRAM
Type
UtRAM
Density
64Mb
UtRAM2
64Mb
UtRAM
32Mb
UtRAM2
32Mb
UtRAM
16Mb
UtRAM2
16Mb
Organization
Part Number
# Pins-Package
Vcc (V)
Speed (ns)
Temp
Current
(mA)
Current
(uA)
Production
Status
4Mx16
K1S6416BCE
48-FBGA
1.8
70
I
40
180
2Q'09
4Mx16
K1S64161CE
48-FBGA
3.0
70
I
40
180
2Q'09
4Mx16
K1B6416B2E
54-FBGA
1.8
104Mhz
I
40
180
2Q'09
4Mx16
K1C6416B2E
54-FBGA
1.8
104Mhz
I
40
180
2Q'09
4Mx16
K1C6416B8E
54-FBGA
1.8
104Mhz
I
40
180
2Q'09
2Mx16
K1S3216BCF
48-FBGA
1.8
70
I
35
120
3Q'09
2Mx16
K1S32161CF
48-FBGA
3.0
70
I
35
100
3Q'09
2Mx16
K1B3216B2F
54-FBGA
1.8
104Mhz
I
35
100
3Q'09
2Mx16
K1C3216B2F
54-FBGA
1.8
104Mhz
I
35
100
3Q'09
2Mx16
K1C3216B8F
54-FBGA
1.8
104Mhz
I
35
100
3Q'09
1Mx16
K1S1616B1C
48-FBGA
1.8
70
I
35
80
3Q'09
1Mx16
K1S161611C
48-FBGA
3.0
70
I
35
95
3Q'09
1Mx16
K1C1616B2C
54-FBGA
1.8
104Mhz
I
35
100
3Q'09
1Mx16
K1C1616B8C
54-FBGA
1.8
104Mhz
I
35
100
3Q'09
High-Speed Asynchronous SRAM
Density
Organization
256Kx16
4Mb
1Mx4
512Kx8
20
Part Number
# Pins-Package
Vcc (V)
Speed (ns)
Operaring
Temp
Operating
Current (mA)
Operating
Current (mA)
Production
Status
K6R4016C1D
44-SOJ, 44-TSOP2
5
10
I
65, 55
20, 5
Mass Production
K6R4016V1D
44-SOJ, 44-TSOP2
3.3
10
I
80, 65
20, 5 (1.2)
Mass Production
K6R4004C1D
32-SOJ
5
10, 12
I
65, 55
20, 5
EOL
K6R4004V1D
32-SOJ
3.3
8, 10
I
80, 65
20, 5
EOL
K6R4008C1D
36-SOJ, 44-TSOP2
5
10
I
65, 55
20, 5
Mass Production
K6R4008V1D
36-SOJ, 44-TSOP2
3.3
10
I
80, 65
20, 5
Mass Production
Asycnhronous SRAM
JANUARY 2009
www.samsung.com/semi/sram
Synchronous Pipelined Burst and Flow-Thru
Organization
2Mx18
36Mb
1Mx36
512Kx36
18Mb
1Mx18
256x36
8Mb
512x18
128Kx32
4Mb
256Kx18
NOTES:
Part Number
# PinsPackage
Operating
Mode
Vdd (V)
Access
Time
tCD (ns)
Speed
tCYC
(MHz)
I/O
Voltage
(V)
Production
Status
Comments
K7A321830C
100-TQFP
SPB
3.3, 2.5
3.1
200
3.3, 2.5
Mass Production
2E1D
K7B321835C
100-TQFP
SB
3.3, 2.5
7.5
118
3.3, 2.5
Mass Production
Ind Temp only
K7A323630C
100-TQFP
SPB
3.3, 2.5
3.1
200
3.3, 2.5
Mass Production
2E1D
K7B323635C
100-TQFP
SB
3.3, 2.5
7.5
118
3.3, 2.5
Mass Production
Ind Temp only
K7A163630B
100-TQFP
SPB
3.3, 2.5
2.6, 3.5
250, 167
3.3, 2.5
Mass Production
2E1D
2E2D
K7A163631B
100-TQFP
SPB
3.3, 2.5
3.1
200
3.3, 2.5
Mass Production
K7B163635B
100-TQFP
SB
3.3, 2.5
7.5
117
3.3, 2.5
Mass Production
K7A161830B
100-TQFP
SPB
3.3, 2.5
2.6, 3.5
250, 167
3.3, 2.5
Mass Production
2E1D
2E2D
K7A161831B
100-TQFP
SPB
3.3, 2.5
3.1
200
3.3, 2.5
Mass Production
K7B161835B
100-TQFP
SB
3.3, 2.5
7.5
117
3.3, 2.5
Mass Production
K7A803609B
100-TQFP
SPB
3.3
2.6
250
3.3,2.5
Not for new designs
2E1D
K7A803600B
100-TQFP
SPB
3.3
3.5
167
3.3,2.5
Not for new designs
2E1D
K7B803625B
100-TQFP
SB
3.3
6.5
133
3.3,2.5
Not for new designs
K7A801809B
100-TQFP
SPB
3.3
2.6
250
3.3,2.5
Not for new designs
2E1D
K7A801800B
100-TQFP
SPB
3.3
3.5
167
3.3,2.5
Not for new designs
2E1D
K7B801825B
100-TQFP
SB
3.3
6.5
133
3.3,2.5
Not for new designs
K7A403609B
100-TQFP
SPB
3.3
2.4
250
3.3, 2.5
Not for new designs
2E1D
K7A403600B
100-TQFP
SPB
3.3
3.5
167
3.3, 2.5
Not for new designs
2E1D
K7B403625B
100-TQFP
SB
3.3
6.5
133
3.3, 2.5
Not for new designs
K7A403200B
100-TQFP
SPB
3.3
3.5
167
3.3, 2.5
Not for new designs
SRAM
Density
2E1D
K7A401809B
100-TQFP
SPB
3.3
2.4
250
3.3, 2.5
Not for new designs
2E1D
K7A401800B
100-TQFP
SPB
3.3
3.5
167
3.3, 2.5
Not for new designs
2E1D
K7B401825B
100-TQFP
SB
3.3
6.5
133
3.3, 2.5
Not for new designs
All TQFP products are Lead Free
2E1D = 2-cycle Enable and 1-cycle Disable
2E2D = 2-cycle Enable and 2-cycle Disable
SPB speed recommendations: For 200MHz use 250MHz; For 133MHz use 167MHz
SB speed recommendation: Use 7.5ns Access Time use 6.5ns Access Time
www.samsung.com/semi/sram
JANUARY 2009
Synchronous SRAM
21
NtRAM
Density
72Mb
36Mb
18Mb
8Mb
4Mb
NOTES:
Organization
Part Number
# PinsPackage
Operating
Mode
Vdd (V)
Access
Time
tCD (ns)
Speed
tCYC
(MHz)
I/O
Voltage
(V)
Production
Status
2Mx36
4Mx18
K7N643645M
100-TQFP, 165FBGA
SPB
2.5
2.6, 3.5
250, 167
2.5
Mass Production
K7N641845M
100-TQFP, 165FBGA
SPB
2.5
2.6, 3.5
250, 167
2.5
Mass Production
1Mx36
K7N323635C
100-TQFP, 165FBGA
SPB
3.3, 2.5
2.6, 3.5
250, 167
3.3, 2.5
Mass Production
2Mx18
K7N321835C
100-TQFP, 165FBGA
SPB
3.3, 2.5
2.6, 3.5
250, 167
3.3, 2.5
Mass Production
1Mx36
K7M323631C
100-TQFP
FT
3.3, 2.5
7.5
118
3.3, 2.5
Mass Production
2Mx18
K7M321831C
100-TQFP
FT
3.3, 2.5
7.5
118
3.3, 2.5
Mass Production
1Mx18
K7N161831B
100-TQFP, 165FBGA
SPB
3.3, 2.5
2.6, 3.5
250, 167
3.3, 2.5
Mass Production
512Kx36
K7N163631B
100-TQFP, 165FBGA
SPB
3.3, 2.5
2.6, 3.5
250, 167
3.3, 2.5
Mass Production
1Mx18
K7M161835B
100-TQFP
FT (SB)
3.3
6.5
133
3.3, 2.5
Mass Production
512Kx36
K7M163635B
100-TQFP
FT (SB)
3.3
6.5
133
3.3, 2.5
Mass Production
256Kx36
K7N803601B
100-TQFP
SPB
3.3
3.5
167
3.3,2.5
Not for new designs
512Kx18
K7N801801B
100-TQFP
SPB
3.3
3.5
167
3.3,2.5
Not for new designs
256Kx36
K7N803609B
100-TQFP
SPB
3.3
2.6
250
3.3,2.5
Not for new designs
512Kx18
K7N801809B
100-TQFP
SPB
3.3
2.6
250
3.3,2.5
Not for new designs
256Kx36
K7N803645B
100-TQFP
SPB
2.5
3.5
167
2.5
Not for new designs
512Kx18
K7N801845B
100-TQFP
SPB
2.5
3.5
167
2.5
Not for new designs
256Kx36
K7N803649B
100-TQFP
SPB
2.5
2.6
250
2.5
Not for new designs
512Kx18
K7N801849B
100-TQFP
SPB
2.5
2.6
250
2.5
Not for new designs
512Kx18
K7M801825B
100-TQFP
FT
3.3
6.5
133
3.3, 2.5
Not for new designs
256Kx36
K7M803625B
100-TQFP
FT
3.3
6.5
133
3.3, 2.5
Not for new designs
128Kx36
K7N403609B
100-TQFP
SPB
3.3
3.0
200
3.3,2.5
Not for new designs
256Kx18
K7N401809B
100-TQFP
SPB
3.3
3.0
200
3.3,2.5
Not for new designs
All TQFP products are Lead Free
NtRAM speed recommendations: For 200MHz use 250MHz; For 133MHz use 167MHz
NtRAM speed recommendation: Use 7.5ns Access Time use 6.5ns Access Time
Recommended SPB speeds are 250MHz and 167MHz
Recommended SB Acess Speed is 7.5ns
LATE-WRITE RR AND R-L
Type
Density
32Mb
LateWrite
R-R
LateWrite
R-R and
R-L
22
8Mb
4Mb
Organization
Part Number
# PinsPackage
Operating
Mode
Vdd (V)
Access
Time
tCD (ns)
Speed
tCYC
(MHz)
I/O
Voltage
(V)
Production
Status
1Mx36
K7P323674C
119-BGA
SP
1.8 / 2.5V
1.6, 2.0
300,250
1.5 (Max 1.8)
C/S
2Mx18
K7P321874C
119-BGA
SP
1.8 / 2.5V
1.6, 2.0
300,250
1.5 (Max 1.8)
C/S
256Kx36
K7P803611B
119-BGA
SP
3.3
1.6
300
1.5 (Max.2.0)
Not for new designs
512Kx18
K7P801811B
119-BGA
SP
3.3
1.6
300
1.5 (Max.2.0)
Not for new designs
256Kx36
K7P803666B
119-BGA
SP
2.5
2.0
250
1.5 (Max.2.0)
Not for new designs
512Kx18
K7P801866B
119-BGA
SP
2.5
2.0
250
1.5 (Max.2.0)
Not for new designs
128Kx36
K7P403622B
119-BGA
SP
3.3
2.5,2.7,3.0
250,200,167
2.5/3.3
Not for new designs
256Kx18
K7P401822B
119-BGA
SP
3.3
2.5,2.7,3.0
250,200,167
2.5/3.3
Not for new designs
256Kx18
K7P401823B
119-BGA
SP
3.3
6.5
167
2.5/3.3
Not for new designs
Synchronous SRAM
JANUARY 2009
www.samsung.com/semi/sram
DDR SYNCHRONOUS SRAM
Density
16Mb
DDR
8Mb
Organization
Part
Number
# PinsPackage
Vdd (V)
Access Time
tCD (ns)
Cycle Time
(MHz)
I/O Voltage
(V)
Production
Status
512K x36
K7D163674B
153-BGA
1.8~2.5
2.3
330, 300
1.5~1.9
Mass Production
1M x18
K7D161874B
153-BGA
1.8~2.5
2.3
330, 300
1.5~1.9
Mass Production
256K x36
K7D803671B
153-BGA
2.5
1.7/1.9/2.1
333, 330, 250
1.5(Max 2.0)
Not for new designs
512K x18
K7D801871B
153-BGA
2.5
1.7/1.9/2.1
333, 330, 250
1.5(Max 2.0)
Not for new designs
K7I641882M
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
CIO-2B
4M x18
K7I641884M
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
CIO-4B
K7J641882M
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
SIO-2B
72Mb
2M x36
2M x18
DDR
II CIO/
SIO
36Mb
1M x36
1M x18
18Mb
512K x36
36Mb
DDR II+
CIO
18Mb
NOTES:
Comments
K7I643682M
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
CIO-2B
K7I643684M
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
CIO-4B
K7J643682M
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
SIO-2B
K7I321882C
165-FBGA
1.8
0.45
333,300,250
1.5,1.8
Mass Production
CIO-2B
K7I321884C
165-FBGA
1.8
0.45
333,300,250
1.5,1.8
Mass Production
CIO-4B
K7J321882C
165-FBGA
1.8
0.45
333,300,250
1.5,1.8
Mass Production
SIO-2B
K7I323682C
165-FBGA
1.8
0.45
333,300,250
1.5,1.8
Mass Production
CIO-2B
K7I323684C
165-FBGA
1.8
0.45
333,300,250
1.5,1.8
Mass Production
CIO-4B
K7J323682C
165-FBGA
1.8
0.45
333,300,250
1.5,1.8
Mass Production
SIO-2B
K7I161882B
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
CIO-2B
K7I161884B
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
CIO-4B
K7J161882B
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
SIO-2B
K7J163682B
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
SIO-2B
K7I163682B
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
CIO-2B
K7I163684B
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
CIO-4B
SRAM
Type
2M x18
K7K3218T2C
165-FBGA
1.8
0.45
450, 400, 333
1.5
Mass Production
DDRII + CIO-2B
1M x36
K7K3236T2C
165-FBGA
1.8
0.45
450, 400, 333
1.5
Mass Production
DDRII + CIO-2B
1M x18
K7K1618T2C
165-FBGA
1.8
0.45
450, 400, 333
1.5
Mass Production
DDRII + CIO-2B
512K x36
K7K1636T2C
165-FBGA
1.8
0.45
450, 400, 333
1.5
Mass Production
DDRII + CIO-2B
2B = Burst of 2
4B = Burst of 4
SIO = Separate I/O
CIO = Common I/O
For DDR II CIO/SIO: C-die use 330, 300, or 250MHz instad of 200MHz or 167MHz using a stable DLL circuit
For DDR II+ CIO: 2-clock latency is available. A 2.5-clock latency can be supported on 18Mb at 500Mhz and 36Mb at 450MHz
www.samsung.com/semi/sram
JANUARY 2009
DDR I / II / II+
23
QDR SYNCHRONOUS SRAM
Type
Density
72Mb
Organization
Part
Number
# PinsPackage
Vdd (V)
Access Time
tCD (ns)
Cycle Time
(MHz)
I/O Voltage
(V)
Production
Status
Comments
8M x9
K7R640982M
165-FBGA
1.8
0.45,0.45,0.50
250,200,167
1.5,1.8
Mass Production
QDR II-2B
K7R641882M
165-FBGA
1.8
0.45,0.45,0.50
250,200,167
1.5,1.8
Mass Production
QDR II-2B
4M x18
2M x36
QDR II
4M x9
36Mb
2M x18
1M x36
2M x9
1M x18
QDR I,
QDR II
18Mb
512K x36
36Mb
QDR
II+
18Mb
NOTES:
24
K7R641884M
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
QDR II-4B
K7R643682M
165-FBGA
1.8
0.45,0.45,0.50
250,200,167
1.5,1.8
Mass Production
QDR II-2B
K7R643684M
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
QDR II-4B
K7R320982C
165-FBGA
1.8
0.45
300, 250, 200
1.5,1.8
Mass Production
QDR II-2B
K7R321882C
165-FBGA
1.8
0.45
300, 250, 200
1.5,1.8
Mass Production
QDR II-2B
K7R321884C
165-FBGA
1.8
0.45
333, 300, 250
1.5,1.8
Mass Production
QDR II-4B
K7R323682C
165-FBGA
1.8
0.45
300, 250, 200
1.5,1.8
Mass Production
QDR II-2B
K7R323684C
165-FBGA
1.8
0.45
333, 300, 250
1.5,1.8
Mass Production
QDR II-4B
K7R160982B
165-FBGA
1.8
0.45,0.45,0.50
250,200,167
1.5,1.8
Mass Production
QDR II - 2B
K7R161882B
165-FBGA
1.8
0.45,0.45,0.50
250,200,167
1.5,1.8
Mass Production
QDR II - 2B
0.45,0.45,0.45,0.50
K7R161884B
165-FBGA
1.8
K7Q161862B
165-FBGA
1.8v / 2.5v 2.5
300,250,200,167
1.5,1.8
Mass Production
QDR II - 4B
167
1.5,1.8
Mass Production
QDR I - 2B
K7Q161864B
165-FBGA
1.8v / 2.5v 2.5
167
1.5,1.8
Mass Production
QDR I - 4B
K7R163682B
165-FBGA
1.8
0.45,0.45,0.50
250,200,167
1.5,1.8
Mass Production
QDR II - 2B
K7R163684B
165-FBGA
1.8
0.45,0.45,0.45,0.50
300,250,200,167
1.5,1.8
Mass Production
QDR II - 4B
K7Q163662B
165-FBGA
1.8v / 2.5v 2.5
167
1.5,1.8
Mass Production
QDR I - 2B
K7Q163664B
165-FBGA
1.8v / 2.5v 2.5
167
1.5,1.8
Mass Production
QDR I - 4B
1M x36
K7S3218T4C
165-FBGA
1.8
0.45
450, 400, 333
1.5
Mass Production
QDR II + 4B
2M x18
K7S3236T4C
165-FBGA
1.8
0.45
450, 400, 333
1.5
Mass Production
QDR II + 4B
1M x18
K7S1618T4C
165-FBGA
1.8
0.45
450, 400, 333
1.5
Mass Production
QDR II + 4B
512K x36
K7S1636T4C
165-FBGA
1.8
0.45
450, 400, 333
1.5
Mass Production
QDR II + 4B
For QDR I, QDR II: 2B = Burst of 2, 4B = Burst of 4
For QDR II (36Mb): C-die use 300, 250MHz or 200MHz instead of 167MHz using a stable DLL circuit
For QDR II (72Mb): 2B = Burst of 2 and 250MHz or 200MHz is recommended, 4B = Burst of 4 and 300MHz or 250MHz is recommended
For QDR II+: 2-clock latency supported. 2.5-clock latency can be supported with 450MHz speed
QDR I / II / II+
JANUARY 2009
www.samsung.com/semi/sram
Synchronous SRAM Ordering Information
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
K
7
X
X
X
X
X
X
X
X
-
X
X
X
X
X
Packaging Type
Speed
Speed
Temp, Power
Package
--Generation
Vcc, Interface, Mode
SAMSUNG Memory
Sync SRAM
Small Classification
Density
Density
Organization
Organization
Vcc, Interface, Mode
2. Sync SRAM: 7
3. Small Classification
A: Sync Pipelined Burst
B: Sync Burst
D: Double Data Rate
I: Double Data Rate II, Common I/O
J: Double Data Rate, Separate I/O
K: Double Data II+, Common I/O
M: Sync Burst + NtRAM
N: Sync Pipelined Burst + NtRAM
P: Sync Pipe
Q: Quad Data Rate I
R: Quad Data Rate II
S: Quad Data Rate II+
4~5. Density
80: 8M
40: 4M 64: 72M 16: 18M
32: 36M
10. Generation
M: 1st Generation
A: 2nd Generation
B: 3rd Generation
C: 4th Generation
D: 5th Generation
11. “--”
6~7. Organization
08: x8 18: x18 36: x36 49: 2.5V,LVTTL,Hi SPEED
52: 2.5V,1.5/1.8V,HSTL,Burst2
54: 2.5V,1.5/1.8V,HSTL,Burst4
62: 2.5V/1.8V,HSTL,Burst2
64: 2.5V/1.8V,HSTL,Burst4
66: 2.5V,HSTL,R-R
74: 1.8V,2.5V,HSTL,All
82: 1.8V,HSTL,Burst2
84: 1.8V,HSTL,Burst4
88: 1.8V,HSTL,R-R
T2: 1.8V,2Clock Latency,Burst2
T4: 1.8V,2Clock Latency,Burst4
U2: 1.8V,2.5Clock Latency,Burst2
U4: 1.8V,2.5Clock Latency,Burst4
09: x9
32: x32
8~9. Vcc, Interface, Mode
00: 3.3V,LVTTL,2E1D WIDE
01: 3.3V,LVTTL,2E2D WIDE
08: 3.3V,LVTTL,2E2D Hi SPEED
09: 3.3V,LVTTL,Hi SPEED
11: 3.3V,HSTL,R-R
12: 3.3V,HSTL,R-L
14: 3.3V,HSTL,R-R Fixed ZQ
22: 3.3V,LVTTL,R-R
23: 3.3V,LVTTL,R-L
25: 3.3V,LVTTL,SB-FT WIDE
30: 1.8/2.5/3.3V,LVTTL,2E1D
31: 1.8/2.5/3.3V,LVTTL,2E2D
35: 1.8/2.5/3.3V,LVTTL,SB-FT
44: 2.5V,LVTTL,2E1D
45: 2.5V,LVTTL,2E2D
www.samsung.com/semi/sram
12. Package
H: BGA,FCBGA,PBGA
G: BGA, FCBGA, FBGA (LF)
F: FBGA
E: FBGA (LF)
Q: (L)QPF
P: (L)QFP(LF)
C: CHIP BIZ W: WAFER
13. Temp, Power
COMMON (Temp,Power)
0: NONE,NONE (Containing of error
handling code)
C: Commercial,Normal
E: Extended,Normal
I: Industrial,Normal
JANUARY 2009
WAFER, CHIP BIZ Level Division
0: NONE,NONE
1: Hot DC sort
2: Hot DC, selected AC sort
14~15. Speed
Sync Burst,Sync Burst + NtRAM
< Mode is R-L > (Clock Accesss Time)
65: 6.5ns
70: 7ns
75: 7.5ns
80: 8ns
85: 8.5ns
Other Small Classification (Clock Cycle Time)
10: 100MHz 11: 117MHz
13: 133MHz 14: 138MHz
16: 166MHz
20: 200MHz
25: 250MHz
26: 250MHz(1.75ns) 27: 275MHz
30: 300MHz 33: 333MHz
35: 350MHz
37: 375MHz
40: 400MHz(t-CYCLE) 42: 425MHz
45: 450MHz
50: 500MHz (except Sync Pipe)
16. Packing Type (16 digit)
- Common to all products, except of Mask ROM
- Divided into TAPE & REEL (In Mask ROM, divided
into TRAY, AMMO packing separately)
Type Component
Component
(Mask ROM)
Module
Packing Type New Marking
TAPE & REEL T
Other (Tray, Tube, Jar) 0 (Number)
Stack S
TRAY Y
AMMO PACKING A
MODULE TAPE & REEL P
MODULE Other Packing M
Synchronous SRAM Ordering Information
25
SRAM
1. Memory (K)
MCP: NAND/DRAM
NAND Density
512Mb
1Gb
2Gb
4Gb
DRAM Density/Organization
Voltage (NAND-DRAM)
MCP Package
PoP Package
256Mb (x16,x32)
2.7V/1.8V - 1.8V
107/137FBGA
120FBGA
512Mb (x16,x32)
2.7V/1.8V - 1.8V
107/137FBGA
120/136FBGA
256Mb (x16,x32)
*3.0V/1.8V - 1.8V
107/137FBGA
152FBGA
512Mb (x16,x32)
*2.7V/1.8V - 1.8V
107/137FBGA
119/152FBGA
1Gb (x32)
1.8V - 1.8V
137FBGA
512Mb (x16,x32)
1.8V - 1.8V
107/137FBGA
119/152FBGA
1Gb (x16,x32)
1.8V - 1.8V
107/137FBGA
152/160/168FBGA
1Gb (x32)
2.7V - 1.8V
137FBGA
137FBGA
MCP: OneNAND/DRAM
OneNAND Density
512Mb
1Gb
2Gb
4Gb
DRAM Density/Organization
Voltage (NAND-DRAM)
MCP Package
PoP Package
256Mb (x32)
3.3V/1.8V - 1.8V
188FBGA
152FBGA
512Mb (x16,x32)
1.8V - 1.8V
167/202FBGA
152FBGA
768Mb (x32)
1.8V - 1.8V
-
152FBGA
512Mb (x16,x32)
1.8V - 1.8V
167/202FBGA
168FBGA
1Gb (x32)
1.8V - 1.8V
-
168FBGA
512Mb (x16,x32)
1.8V - 1.8V
-
152/160/168FBGA
1Gb (x16,x32)
1.8V - 1.8V
167/202FBGA
152/160/168FBGA
2Gb (x32)
1.8V - 1.8V
1Gb (x16)
1.8V - 1.8V
202FBGA
-
PoP Package
152/168FBGA
MCP: FlexOneNAND/DRAM
(Flex)OneNAND
Density
DRAM Density/Organization
Voltage (NAND-DRAM)
MCP Package
8Gb
2Gb (x32)
1.8V - 1.8V
202FBGA
MCP Package
MCP: OneNAND/DRAM/OneDRAM
(Flex)OneNAND
Density
DRAM Density/Organization
Voltage (NAND-DRAM)
2Gb
1Gb (x16)
1.8V - 1.8V
26
MCP
PoP Package
216FBGA
JANUARY 2009
www.samsung.com/semi/mcp
MCP: moviNAND/NAND/DRAM
OneNAND Density
DRAM Density/Organization
Voltage (MoviNAND/NAND-DRAM)
MCP Package
1GB & 1Gb
1Gb (x32)
3.3V/1.8V - 1.8V
199FBGA
1Gb (x32)
3.3V/1.8V - 1.8V
199FBGA
2Gb (x32)
2.8V/1.8V - 1.8V
199FBGA
1Gb (x32)
3.3V/1.8V - 1.8V
199FBGA
2Gb (x32)
3.3V/1.8V - 1.8V
199FBGA
1Gb (x32)
3.3V/1.8V - 1.8V
199FBGA
2Gb (x32)
3.3V/1.8V - 1.8V
199FBGA
1Gb (x32)
3.3V/1.8V - 1.8V
199FBGA
2Gb (x32)
3.3V/1.8V - 1.8V
199FBGA
1GB & 2Gb
2GB & 2Gb
4GB & 2Gb
8GB & 2Gb
MCP: NOR/UtRAM
NOR Density
UtRAM or DRAM Density/ Organization
Voltage (NOR-DRAM)
Package
512Mb
128Mb
1.8V - 1.8V
107FBGA
1.8V - 1.8V
107FBGA
3.0V - 3.0V
84FBGA
3.0V - 3.0V
84FBGA
1.8V - 1.8V
56FBGA
1.8V - 1.8V
84/88FBGA
1.8V - 1.8V
84/88FBGA
3.0V - 3.0V
64FBGA
32Mb
3.0V - 3.0V
56FBGA
UtRAM or DRAM Density/ Organization
Voltage (NOR-DRAM)
Package
128Mb (x16)
1.8V - 1.8V
103FBGA
256Mb (x16)
1.8V - 1.8V
103FBGA
128Mb
256Mb
64Mb
64Mb
128Mb
32Mb
64Mb
NOR Density
512Mb
MCP
MCP: NOR/DRAM
MCP: OneDRAM/OneNAND/NAND
OneDRAM
OneNAND/NAND
Version
Org
Vcc
Speed
Opr.
Org
Vcc
Speed
Type
A-port : x32
B-port : x32
1.8V
166MHz@CL=3
A-port : SDR
B-port : DDR
x16
1.8V
83Mhz
Mux
AQD
A-port : x16
B-port : x32
1.8V
166MHz@CL=3
A-port : DDR
B-port : DDR
x16
1.8V
83Mhz
Mux
A-port : x16
B-port : x32
1.8V
166MHz@CL=3
A-port : SDR
B-port : DDR
x16
1.8V
83Mhz
A-port : x32
B-port : x32
1.8V
A-port : SDR
B-port : DDR
x16
1.8V
83Mhz
Part No.
PKG Information
Size
Type
KAC00F008M-AE77000
14*14*1.15
240FBGA
AQD
KAC00F00XM-AE77000
14*14*1.15
240FBGA
Mux
AQD
TBD
14*14*1.15
240FBGA
Mux
AAQD
KBZ00900PM-A439000
14*14*1.25
240FBGA
* OneDRAM 512Mb now EOL
* Based on demand, OneDRAM is in MCP only, not in discrete package
www.samsung.com/semi/mcp
JANUARY 2009
MCP
27
OneNAND
OneNAND is a monolothic IC that combines a NAND flash array with a NOR flash interface plus an SRAM buffer. It’s ideal for high-performance, high-density applications.
Density
512Mb
1Gb
2Gb
4Gb DDP
Part Number
Package
Org.
Voltage (V)
Temp.
Speed
MOQ (Tray)
KFG1216Q2B-DEB8000
63FBGA (9.5x12)
X16
1.8
extended
83Mhz
1,120
KFG1216U2B-DIB6000
63FBGA (9.5x12)
X16
3.3
industrial
66Mhz
1,120
KFG1216Q2B-SEB8000
67FBGA (7x9)
X16
1.8
extended
83Mhz
1,120
KFG1216U2B-SIB6000
67FBGA (7x9)
X16
3.3
industrial
66Mhz
1,120
KFM1216Q2B-DEB8000
63 FBGA (9.5x12)
X16
1.8v
extended
83Mhz
1,120
KFG1G16U2C-AIB6000
63 FBGA (10x13)
X16
3.3v
industrial
66Mhz
1,120
KFG1G16Q2C-AEB8000
63 FBGA (10x13)
X16
1.8v
extended
83Mhz
1,120
KFM1G16Q2C-DEB8000
63 FBGA (10x13)
X16
1.8v
extended
83Mhz
1,120
KFG2G16Q2A-DEB8000
63 FBGA (10x13)
X16
1.8v
extended
83Mhz
1,120
KFM2G16Q2A-DEB8000
63 FBGA (10x13)
X16
1.8v
extended
83Mhz
1,120
KFH4G16Q2A-DEB8000
63 FBGA (10x13)
X16
1.8v
extended
83Mhz
1,120
Remarks
Muxed
Muxed
Muxed
*T&R MOQ 2Kpcs
**Please contact your local Samsung sales representative for latest product offerings & information on support & availability.
NOTE: All parts are lead free
Flex-OneNAND
A monolithic IC with a NAND flash array using a NOR flash interface, Flex-OneNAND enables partitioning into SLC and MLC areas so the chip can be configured for storage or high-speed access.
Density
4Gb Flex-OneNAND
Part Number
Package
Org.
Voltage (V)
Temp.
Speed
MOQ (Tray)
Remarks
KFG4GH6Q4M-DEB8000
63 FBGA (10x13)
X16
1.8v
extended
83Mhz
1,120
FSR software required
KFG4GH6U4M-DIB6000
63 FBGA (10x13)
X16
3.3V
Industrial
66Mhz
1,120
FSR software required
KFM4GH6Q4M-DEB8000
63 FBGA (10x13)
X16
1.8v
extended
83Mhz
1,120
Muxed. FSR SW req.
63 FBGA (10x13)
X16
3.3V
Industrial
66Mhz
1,120
FSR software required
8Gb DDP Flex-OneNAND KFH8GH6U4M-DIB6000
*T&R MOQ 2Kpcs
**Please contact your local Samsung sales representative for latest product offerings & information on support & availability.
NOTE: All parts are lead free
moviNAND
Combining high-density MLC NAND flash with an MMC controller in a single chip that has an MMC interface, moviNAND delivers dense, cost-effective storage for embedded applications.
moviNAND Densities
Vol(V)
Package
Package Size
Org.
1GB
1.8/3.3
FBGA
12.0x18x1.2t
x8
2GB
1.8/3.3
FBGA
12.0x18x1.2t
x8
4GB
1.8/3.3
FBGA
12.0x18x1.2t
x8
8GB
1.8/3.3
FBGA
12.0x18x1.3t
x8
16GB
1.8/3.3
FBGA
14.0x18.0
x8
Please contact your local Samsung sales representative for latest product offerings.
NOTE: All parts are lead free
OneDRAM
OneDRAM is a dual-port, low-power DRAM with an SRAM buffer interface and is optimal for high-performance, high-density mobile applications.
Density
Part Number
Package
Org.
Voltage
(V)
Temp.
Speed
KJA51Z23PC-AAO
216FBGA
(14x14)
KJA51Y23PC-AAO
152FBGA
(14x14)
MOQ
(Tray)
A-port:x16(SDR/DDR)
B-port:x16(SDR/DDR)
1.8V
extended
133MHz
PKG Combination: 2G OneNAND + 512Mb MDDR + 512MB
OneDRAM
MCP P/N: KAC00F00JM
A-port:x16(SDR/DDR)
B-port:x16(SDR/DDR)
1.8V
extended
133MHz
PKG Combination: 2G NAND + 512Mb MDDR + 512Mb
OneDRAM
MCP P/N: KAR00900GM
512Mb
28
Fusion Memory
JANUARY 2009
Remarks
www.samsung.com/semi/fusion
3.5" Hard Disk Drives
Family
F1
T166S
T133S
T133
S250
S166S
P120S
P120
P80SD
P80SD
Capacity (GB)
RPM
Interface
Buffer
Model
1TB
7200
SATA-2
32MB
HD103UJ
750
7200
SATA-2
32MB
HD753LJ
750
7200
SATA-2
16MB
HD752LJ
640
7200
SATA-2
16MB
HD642JJ
500
7200
SATA-2
16MB
HD502IJ
500
7200
SATA-2
8MB
HD501IJ
320
7200
SATA-2
16MB
HD322HJ
250
7200
SATA-2
16MB
HD252HJ
250
7200
SATA-2
8MB
HD251HJ
160
7200
SATA-2
16MB
HD162GJ
160
7200
SATA-2
8MB
HD161GJ
500
7200
SATA-2
8
HD500LJ
500
7200
SATA-2
16
HD501LJ
320
7200
SATA-2
8
HD320KJ
320
7200
SATA-2
16
HD321KJ
400
7200
SATA-2
8
HD400LI
400
7200
SATA-2
16
HD401LI
300
7200
SATA-2
8
HD300LI
400
7200
PATA
8
HD400LD
300
7200
PATA
8
HD300LD
250
7200
SATA-2
8
HD250HJ
160
7200
SATA-2
8
HD161HJ
120
7200
SATA-2
8
HD120HJ
80
7200
SATA-2
2
HD081GJ
80
7200
SATA-2
8
HD082GJ
40
7200
SATA-2
2
HD041GJ
40
7200
SATA-2
8
HD042GJ
250
7200
SATA-2
8
SP2504C
250
7200
SATA-2
8
SP2004C
250
7200
PATA
8
SP2514N
200
7200
PATA
8
SP2014N
160
7200
SATA-2
8
HD160JJ
120
7200
SATA-2
8
HD120IJ
80
7200
SATA-2
8
HD080HJ
160
7200
PATA
2
SP1644N
160
7200
PATA
8
SP1654N
120
7200
PATA
2
SP1243N
120
7200
PATA
8
SP1253N
80
7200
PATA
2
SP0842N
RPM
Interface
Buffer
Model
3.5" Enterprise RAID Drives
F1R
Capacity (GB)
1TB
7200
SATA-2
32
HE103UJ
750
7200
SATA-2
32
HE753LJ
500
7200
SATA-2
16
HE502IJ
320
7200
SATA-2
16
HE322HJ
250
7200
SATA-2
16
HE252HJ
S TOR AGE
Family
www.samsung.com/hdd
JANUARY 2009
Hard Disk Drives
29
2.5“ Hard Disk Drives
Family
M6
M5S
M5P
M80S
M80
M60S
M60
Capacity (GB)
RPM
Interface
Buffer
Model
320
5400
SATA
8
HM320JI
250
5400
SATA
8
HM251JI
250
5400
SATA
8
HM250JI
160
5400
SATA
8
HM160HI
120
5400
SATA
8
HM121HI
80
5400
SATA
8
HM080GI
60
5400
SATA
8
HM061GI
160
5400
PATA
8
HM160HC
120
5400
PATA
8
HM121HC
80
5400
PATA
8
HM080GC
160
5400
SATA
8
HM160JI
120
5400
SATA
8
HM120II
80
5400
SATA
8
HM080HI
160
5400
PATA
8
HM160JC
120
5400
PATA
8
HM120IC
80
5400
PATA
8
HM080HC
120
5400
SATA
8
HM120JI
100
5400
SATA
8
HM100JI
60
5400
SATA
8
HM060HI
120
5400
PATA
8
HM120JC
100
5400
PATA
8
HM100JC
60
5400
PATA
8
HM060HC
RPM
Interface
Buffer
Model
PATA
2
HS061HA
CEATA
2
HS061HP
PATA
2
HS041HA
1.8“ Hard Disk Drives
Family
Capacity (GB)
60
40
N1 (3600rpm)
3600
30
20
60
40
N1 (4200rpm)
4200
30
20
CEATA
2
HS041HP
PATA
2
HS031GA
CEATA
2
HS031GP
PATA
2
HS021GA
CEATA
2
HS021GP
PATA
2
HS060HB
CEATA
2
HS060HQ
PATA
2
HS040HB
CEATA
2
HS040HQ
PATA
2
HS030GB
CEATA
2
HS030GQ
PATA
2
HS020GB
CEATA
2
HS020GQ
External Hard Disk Drives
Family
Size
Capacity (GB)
Model #
Interface
Operating System
Dimensions
S1 Mini
1.8"
Windows 2000 Pro/Vista/XP; Mac OS X 10.4.8 or later
15x87x62mm
2.5"
HXSU012BA
HXSU016BA
HXMU016DA
HXMU025DA
HXMU032DA
HXMU040DA
HXMU050DA
USB 2.0
S2 Portable
120
160
160
250
320
400
500
USB 2.0
Windows 2000 Pro/Vista/XP; Mac OS X 10.4.8 or later
17x111x82mm
30
Hard Disk Drives
JANUARY 2009
www.samsung.com/hdd
SH-S222L Optical Storage
Disk Format
General Specifications
1. DISC TYPE
- READ: MASTERED DISC, CD-R, CD-RW, DVD-ROM, DVD-R 3.95GB,
DVD-R 4.7GB Authoring, DVD-R 4.7GB General, DVD-RW 4.7GB,
DVD+R 4.7GB, DVD+R 8.5GB(Double-layer), DVD+RW 4.7GB,
DVD-RAM 4.7GB/2.6GB
- WRITE: DVD 4.7GB(DVD±R, DVD±RW, DVD-RAM), Double Layer±R,
CD-R, CD-RW
- Print: CD-R, DVD+/-R LS Media
Data Transfer Rate MAX
2. DATA FORMAT:
- CD: CD-DA, CD-ROM, MIXED-CD, CD-ROM XA, ENHANCED-CD,
CD-EXTRA/CD+, Photo-CD, VIDEO-CD, CD-TEXT, CD-G,
Multi-Session
- DVD: DVD-RAM, DVD-ROM, DVD-VIDEO, Multi-Session(Read/Write),
Multi-Border(Read)
3. Recording:
- CD-R/RW: DAO, TAO, SAO, Packet Write(RW)
- DVD+R/RW: Sequential, Random(RW)
- DVD-R/RW: Incremental, DAO, Restricted Overwrite(RW)
- DVD-RAM: Random
Media Type
Write
Read
DVD+R
22X (29.7 MB/sec)
16X (21.6MB/sec)
DVD+RW
8X (10.8MB/sec)
12X (16.2MB/sec)
DVD+R DUAL
16X (21.6MB/sec)
12X (16.2MB/sec)
DVD-R DUAL
12X (16.2MB/sec)
12X (16.2MB/sec)
DVD-R
22X (29.7 MB/sec)
16X (21.6MB/sec)
DVD-RW
6X (8.1MB/sec)
12X (16.2MB/sec)
DVD-ROM (Single)
-
16X (21.6MB/sec)
DVD-ROM (Dual)
-
12X (16.2MB/sec)
CD-ROM
-
48X (7.2MB/sec)
CD-R
48X (7.2MB/sec)
40X (6.0MB/sec)
US-RW
32X (4.8MB/sec)
40X (6.0MB/sec)
HS-RW
10X (1.5MB/sec)
40X (6.0MB/sec)
CD-RW
4X (0.6MB/sec)
40X (6.0MB/sec)
DVD-RAM
12X (16.2MB/sec)
12X (16.2MB/sec)
Data transfer mode
Ultra DMA Mode 2: 33.3MB/sec, Multiword DMA mode2:
16.6MB/sec, PIO Mode 4: 16.7MB/sec
Interface
ATA/ATAPI (E-IDE)
Buffer Memory
2M
Drive Install Form
Horizontal / Vertical
Size (W * H * L)
148.2mm (W) x 42mm (H) X 170mm (D) with Bezel
Buffer Protection
yes
Lead Free
yes
Light Scribe
yes
Disk Format
General Specifications
1. DISC TYPE
- READ: MASTERED DISC, CD-R, CD-RW, DVD-ROM, DVD-R 3.95GB,
DVD-R 4.7GB Authoring, DVD-R 4.7GB General, DVD-RW 4.7GB,
DVD+R 4.7GB, DVD+R 8.5GB(Double-layer), DVD+RW 4.7GB,
DVD-RAM 4.7GB/2.6GB
- WRITE: DVD 4.7GB(DVD±R, DVD±RW, DVD-RAM), Double Layer±R,
CD-R, CD-RW
Data Transfer Rate MAX
2. DATA FORMAT:
- CD: CD-DA, CD-ROM, MIXED-CD, CD-ROM XA, ENHANCED-CD,
CD-EXTRA/CD+, Photo-CD, VIDEO-CD, CD-TEXT, CD-G,
Multi-Session
- DVD: DVD-RAM, DVD-ROM, DVD-VIDEO, Multi-Session (Read/Write),
Multi-Border(Read)
3. Recording:
- CD-R/RW: DAO, TAO, SAO, Packet Write(RW)
- DVD+R/RW: Sequential, Random(RW)
- DVD-R/RW: Incremental, DAO, Restricted Overwrite(RW)
- DVD-RAM: Random
www.samsungodd.com
JANUARY 2009
Media Type
Write
Read
DVD+R
22X (29.7 MB/sec)
16X (21.6MB/sec)
DVD+RW
8X (10.8MB/sec)
12X (16.2MB/sec)
DVD+R DUAL
16X (21.6MB/sec)
12X (16.2MB/sec)
DVD-R DUAL
12X (16.2MB/sec)
12X (16.2MB/sec)
DVD-R
22X (29.7 MB/sec)
16X (21.6MB/sec)
DVD-RW
6X (8.1MB/sec)
12X (16.2MB/sec)
DVD-ROM (Single)
-
16X (21.6MB/sec)
DVD-ROM (Dual)
-
12X (16.2MB/sec)
CD-ROM
-
48X (7.2MB/sec)
CD-R
48X (7.2MB/sec)
40X (6.0MB/sec)
US-RW
32X (4.8MB/sec)
40X (6.0MB/sec)
HS-RW
10X (1.5MB/sec)
40X (6.0MB/sec)
CD-RW
4X (5.4MB/sec)
40X (6.0MB/sec)
DVD-RAM
12X (16.2MB/sec)
12X (16.2MB/sec)
Data transfer mode
Ultra DMA Mode 2: 33.3MB/sec, Multiword DMA mode2:
16.6MB/sec, PIO Mode 4: 16.7MB/sec
Interface
ATA/ATAPI (E-IDE)
Buffer Memory
2M
Drive Install Form
Horizontal / Vertical
Size (W * H * L)
148.2mm (W) x 42mm (H) X 170mm (D) with bezel
Buffer Protection
yes
Lead Free
yes
Light Scribe
no
Optical Disk Drives
S TOR AGE
SH-S222A Optical Storage
31
SH-S223Q Optical Storage
Disk Format
General Specifications
1. DISC SUPPORT
- READ: MASTERED DISC, CD-R, CD-RW, DVD-ROM, DVD-R 3.95GB,
DVD-R 4.7GB Authoring, DVD-R 4.7GB General,
DVD-RW 4.7GB, DVD-RW 8.5 GB(Double-layer),
DVD+R 4.7GB, DVD+R 8.5GB(Double-layer),
DVD+RW 4.7GB, DVD-RAM 4.7GB/2.6GB
- WRITE: DVD 4.7GB(DVD±R, DVD±RW, DVD-RAM), Double Layer±R,
Double Layer-RW, CD-R, CD-RW
- Print: DVD+/-R ( LF Media [Label/Data Side] / Non LF Media
[Data Side] ) - (Optional)
Data Transfer Rate MAX
2. DATA FORMAT:
- CD: CD-DA, CD-ROM, MIXED-CD, CD-ROM XA, ENHANCED-CD,
CD-EXTRA/CD+, Photo-CD, VIDEO-CD, CD-TEXT, CD-G,
Multi-Session
- DVD: DVD-RAM, DVD-ROM, DVD-VIDEO, Multi-Session(Read/Write),
Multi-Border(Read)
Media Type
Write
Read
DVD+R
22X(29.7 MB/sec)
16X (21.6MB/sec)
DVD+RW
8X (10.8MB/sec)
12X (16.2MB/sec)
DVD+R DUAL
16X (21.6MB/sec)
12X (16.2MB/sec)
DVD-R DUAL
12X (16.2MB/sec)
12X (16.2MB/sec)
DVD-R
22X(29.7 MB/sec)
16X (21.6MB/sec)
DVD-RW
6X (8.1MB/sec)
12X (16.2MB/sec)
DVD-ROM (Single)
-
16X (21.6MB/sec)
DVD-ROM (Dual)
-
12X (16.2MB/sec)
CD-ROM
-
48X (7.2MB/sec)
CD-R
48X (7.2MB/sec)
40X (6.0MB/sec)
US-RW
32X (4.8MB/sec)
40X (6.0MB/sec)
HS-RW
10X (1.5MB/sec)
40X (6.0MB/sec)
CD-RW
4X (0.6MB/sec)
40X (6.0MB/sec)
DVD-RAM
12X (16.2MB/sec)
12X (16.2MB/sec)
Access Time
CD 110ms (Random), DVD 130ms (Random)
Data transfer mode
SATA 1.5Gbps
Interface
Serial-ATA
Buffer Memory
2M
Drive Install Form
Horizontal / Vertical
Size (W * H * L)
148.2mm (W) X 170mm (D) X 42mm (H) with bezel
Buffer Protection
Applied
Lead Free
Applied
Light Scribe
Applied
SH-S223F Optical Storage
Disk Format
General Specifications
1. DISC SUPPORT
- READ: MASTERED DISC, CD-R, CD-RW, DVD-ROM, DVD-R 3.95GB,
DVD-R 4.7GB Authoring, DVD-R 4.7GB General,
DVD-RW 4.7GB, DVD-RW 8.5 GB(Double-layer),
DVD+R 4.7GB, DVD+R 8.5GB(Double-layer),
DVD+RW 4.7GB, DVD-RAM 4.7GB/2.6GB
- WRITE: DVD 4.7GB(DVD±R, DVD±RW, DVD-RAM), Double Layer±R,
Double Layer-RW, CD-R, CD-RW
- Print: DVD+/-R ( LF Media [Label/Data Side] / Non LF Media
[Data Side] ) - (Optional)
Data Transfer Rate MAX
2. DATA FORMAT:
- CD: CD-DA, CD-ROM, MIXED-CD, CD-ROM XA, ENHANCED-CD,
CD-EXTRA/CD+, Photo-CD, VIDEO-CD, CD-TEXT, CD-G,
Multi-Session
- DVD: DVD-RAM, DVD-ROM, DVD-VIDEO, Multi-Session(Read/Write),
Multi-Border(Read)
32
Optical Disk Drives
Media Type
Write
Read
DVD+R
22X(29.7 MB/sec)
16X (21.6MB/sec)
DVD+RW
8X (10.8MB/sec)
12X (16.2MB/sec)
DVD+R DUAL
16X (21.6MB/sec)
12X (16.2MB/sec)
DVD-R DUAL
12X (16.2MB/sec)
12X (16.2MB/sec)
DVD-R
22X(29.7 MB/sec)
16X (21.6MB/sec)
DVD-RW
6X (8.1MB/sec)
12X (16.2MB/sec)
DVD-ROM (Single)
-
16X (21.6MB/sec)
DVD-ROM (Dual)
-
12X (16.2MB/sec)
CD-ROM
-
48X (7.2MB/sec)
CD-R
48X (7.2MB/sec)
40X (6.0MB/sec)
US-RW
32X (4.8MB/sec)
40X (6.0MB/sec)
HS-RW
10X (1.5MB/sec)
40X (6.0MB/sec)
CD-RW
4X (0.6MB/sec)
40X (6.0MB/sec)
DVD-RAM
12X (16.2MB/sec)
12X (16.2MB/sec)
Access Time
CD 110ms (Random), DVD 130ms (Random)
Data transfer mode
SATA 1.5Gbps
Interface
Serial-ATA
Buffer Memory
2M
Drive Install Form
Horizontal / Vertical
Size (W * H * L)
148.2mm (W) x 42mm (H) X 170mm (D) with Bezel
Buffer Protection
yes
Lead Free
yes
Light Scribe
no
JANUARY 2009
www.samsungodd.com
SN-T083A [Slot-in Type] Optical Storage
Disk Format
General Specifications
- READ: MASTERED DISC, CD-R, CD-RW, DVD-ROM, DVD-R 3.95GB,
DVD-R 4.7GB Authoring, DVD-R 4.7GB General, DVD-RW,
DVD+R 4.7GB, DVD+R 8.5GB(Double-layer),
DVD+RW 4.7GB, DVD-RAM 4.7GB
- WRITE: DVD 4.7GB(DVD±R, DVD±RW, DVD-RAM),
Double Layer±R,CD-R, CD-RW
Data Transfer Rate MAX
Media Type
Write
Read
DVD+R
8X (10.8MB/sec)
8X (10.8MB/sec)
DVD+RW
8X (10.8MB/sec)
8X (10.8MB/sec)
DVD+R DUAL
6X (8.1MB/sec)
6X (8.1MB/sec)
DVD-R DUAL
6X (8.1MB/sec)
6X (8.1MB/sec)
DVD-R
6X (8.1MB/sec)
8X (10.8MB/sec)
DVD-RW
6X (8.1MB/sec)
8X (10.8MB/sec)
DVD-ROM (Single)
-
8X (10.8MB/sec)
DVD-ROM (Dual)
-
8X (10.8MB/sec)
CD-ROM
-
24X (3.6MB/sec)
CD-R
24X (3.6MB/sec)
24X (3.6MB/sec)
US-RW
24X (3.6MB/sec)
24X (3.6MB/sec)
HS-RW
10X (1.5MB/sec)
24X (3.6MB/sec)
CD-RW
4X (0.6MB/sec)
24X (3.6MB/sec)
DVD-RAM
5X (6.75MB/sec)
5X (6.75MB/sec)
Data transfer mode
Ultra DMA Mode 2: 33.3MB/sec, Multiword DMA mode2:
16.6MB/sec, PIO Mode 4: 16.7MB/sec
Interface
Serial-ATA
Buffer Memory
2M
Drive Install Form
Horizontal
Size (W * H * L)
128 (W) x 12.7 (H) x 127 (D) without Bezel
Buffer Protection
yes
Lead Free
yes
Light Scribe
no
Disk Format
General Specifications
1. DISC TYPE
- READ: MASTERED DISC, CD-R, CD-RW, DVD-ROM, DVD+R 4.7GB,
DVD+R DL 8.5GB, DVD+RW 4.7GB, DVD-R 3.95GB,
DVD-R 4.7GB Authoring, DVD-R 4.7GB General,
DVD-R DL 8.5GB, DVD-RW, DVD-RAM 4.7GB
- WRITE: DVD4.7GB(DVD±R/RW, DVD-RAM), DVD±R DL(8.5GB),
CD-R/RW
Data Transfer Rate MAX
Media Type
Write
Read
DVD+R
8X (10.8MB/sec)
8X (10.8MB/sec)
DVD+RW
8X (10.8MB/sec)
8X (10.8MB/sec)
DVD+R DUAL
6X (8.1MB/sec)
6X (8.1MB/sec)
DVD-R DUAL
6X (8.1MB/sec)
6X (8.1MB/sec)
2. DATA FORMAT:
- CD: CD-DA, CD-ROM, MIXED-CD, CD-ROM XA, ENHANCED-CD,
CD-EXTRA/CD+, Photo-CD, VIDEO-CD, CD-TEXT, CD-G,
Multi-Session
- DVD: DVD-RAM, DVD-ROM, DVD-VIDEO, Multi-Session(Read/Write),
Multi-Border(Read/Write)
DVD-R
8X (10.8MB/sec)
8X (10.8MB/sec)
DVD-RW
6X (8.1MB/sec)
8X (10.8MB/sec)
DVD-ROM (Single)
-
8X (10.8MB/sec)
DVD-ROM (Dual)
-
8X (10.8MB/sec)
CD-ROM
-
24X (3.6MB/sec)
3. Recording mode
- CD-R/RW: DAO, TAO, SAO, Packet Write(RW)
- DVD+R/RW: Sequential, Random(RW)
- DVD-R/RW: Incremental, DAO, Restricted Overwrite(RW)
- DVD-RAM: Random
CD-R
24X (3.6MB/sec)
24X (3.6MB/sec)
US-RW
24X (3.6MB/sec)
24X (3.6MB/sec)
HS-RW
10X (1.5MB/sec)
24X (3.6MB/sec)
CD-RW
4X (0.6MB/sec)
24X (3.6MB/sec)
DVD-RAM
5X (6.75MB/sec)
5X (6.75MB/sec)
Access Time
CD 150ms (Random), DVD 160ms (Random)
Data transfer mode
Ultra DMA Mode 2: 33.3MB/sec, Multiword DMA mode2:
16.6MB/sec, PIO Mode 4: 16.7MB/sec
Interface
Serial-ATA
Buffer Memory
2M
Drive Install Form
Horizontal / Vertical
Size (W * H * L)
128 (W) x 12.7 (H) x 127 (D) without Bezel
Buffer Protection
yes
Lead Free
yes
Light Scribe
no
www.samsungodd.com
JANUARY 2009
Optical Disk Drives
S TOR AGE
SN-S083B Optical Storage
33
SN-S083M Optical Storage
Disk Format
General Specifications
1. DISC TYPE
- READ: MASTERED DISC, CD-R, CD-RW, DVD-ROM, DVD+R 4.7GB,
DVD+R DL 8.5GB, DVD+RW 4.7GB, DVD-R 3.95GB,
DVD-R 4.7GB Authoring, DVD-R 4.7GB General,
DVD-R DL 8.5GB, DVD-RW, DVD-RAM 4.7GB
- WRITE: DVD4.7GB(DVD±R/RW, DVD-RAM), DVD±R DL(8.5GB),
CD-R/RW
Data Transfer Rate MAX
2. DATA FORMAT:
- CD: CD-DA, CD-ROM, MIXED-CD, CD-ROM XA, ENHANCED-CD,
CD-EXTRA/CD+, Photo-CD, VIDEO-CD, CD-TEXT, CD-G,
Multi-Session
- DVD: DVD-RAM, DVD-ROM, DVD-VIDEO, Multi-Session(Read/Write),
Multi-Border(Read/Write)
3. Recording mode
- CD-R/RW: DAO, TAO, SAO, Packet Write(RW)
- DVD+R/RW: Sequential, Random(RW)
- DVD-R/RW: Incremental, DAO, Restricted Overwrite(RW)
- DVD-RAM: Random
Media Type
Write
Read
DVD+R
8X (10.8MB/sec)
8X (10.8MB/sec)
DVD+RW
8X (10.8MB/sec)
8X (10.8MB/sec)
DVD+R DUAL
6X (8.1MB/sec)
6X (8.1MB/sec)
DVD-R DUAL
6X (8.1MB/sec)
6X (8.1MB/sec)
DVD-R
8X (10.8MB/sec)
8X (10.8MB/sec)
DVD-RW
6X (8.1MB/sec)
8X (10.8MB/sec)
DVD-ROM (Single)
-
8X (10.8MB/sec)
DVD-ROM (Dual)
-
8X (10.8MB/sec)
CD-ROM
-
24X (3.6MB/sec)
CD-R
24X (3.6MB/sec)
24X (3.6MB/sec)
US-RW
24X (3.6MB/sec)
24X (3.6MB/sec)
HS-RW
10X (1.5MB/sec)
24X (3.6MB/sec)
CD-RW
4X (0.6MB/sec)
24X (3.6MB/sec)
5X (6.75MB/sec)
DVD-RAM
5X (6.75MB/sec)
Access Time
CD 150ms (Random), DVD 160ms (Random)
Data transfer mode
Ultra DMA Mode 2: 33.3MB/sec, Multiword DMA mode2:
16.6MB/sec, PIO Mode 4: 16.7MB/sec
Interface
Serial-ATA
Buffer Memory
2M
Drive Install Form
Horizontal / Vertical
Size (W * H * L)
128 (W) x 12.7 (H) x 127 (D) without Bezel
Buffer Protection
yes
Lead Free
yes
Light Scribe
yes
SN-S082H Optical Storage
Disk Format
- CD: CD-DA, CD-ROM, MIXED-CD, CD-ROM XA, ENHANCED-CD,
CD-EXTRA/CD+, Photo-CD, VIDEO-CD, CD-TEXT, CD-G,
Multi-Session
- DVD: DVD-RAM, DVD-ROM, DVD-VIDEO, Multi-Session(Read/Write),
Multi-Border(Read/Write)
General Specifications
Data Transfer Rate MAX
Media Type
Write
Read
DVD+R
8X (10.8MB/sec)
8X (10.8MB/sec)
DVD+RW
8X (10.8MB/sec)
8X (10.8MB/sec)
DVD+R DUAL
6X (8.1MB/sec)
8X (10.8MB/sec)
DVD-R DUAL
6X (8.1MB/sec)
8X (10.8MB/sec)
DVD-R
8X (10.8MB/sec)
8X (10.8MB/sec)
DVD-RW
6X (8.1MB/sec)
8X (10.8MB/sec)
DVD-ROM (Single)
-
8X (10.8MB/sec)
DVD-ROM (Dual)
-
8X (10.8MB/sec)
CD-ROM
-
24X (3.6MB/sec)
CD-R
24X (3.6MB/sec)
24X (3.6MB/sec)
US-RW
24X (3.6MB/sec)
24X (3.6MB/sec)
HS-RW
10X (1.5MB/sec)
24X (3.6MB/sec)
CD-RW
4X (0.6MB/sec)
24X (3.6MB/sec)
DVD-RAM
5X (6.75MB/sec)
5X (6.75MB/sec)
Data transfer mode
Interface
Buffer Memory
Drive Install Form
Size (W * H * L)
Buffer Protection
Lead Free
Light Scribe
34
Optical Disk Drives
JANUARY 2009
Ultra DMA Mode 2: 33.3MB/sec, Multiword DMA mode2:
16.6MB/sec, PIO Mode 4: 16.7MB/sec
ATA/ATAPI(E-IDE)
2M
Horizontal
128 (W) x 12.7 (H) x 127 (D) without Bezel
yes
yes
no
www.samsungodd.com
SN-M242D Optical Storage
Disk Format
General Specifications
CD-DA, CD-ROM, Video CD, CD-I/FMV, CD-ROM XA, Multi-Session Disc,
DVD-ROM, DVD-VIDEO, DVD±R,DVD±RW, CD-R,CD-RW, DVD-RAM
Data Transfer Rate MAX
Media Type
Write
Read
DVD+R
-
8X (10.8MB/sec)
DVD+RW
-
8X (10.8MB/sec)
DVD+R DUAL
-
6X (8.1MB/sec)
DVD-R DUAL
-
6X (8.1MB/sec)
DVD-R
-
8X (10.8MB/sec)
DVD-RW
-
8X (10.8MB/sec)
DVD-ROM (Single)
-
8X (10.8MB/sec)
DVD-ROM (Dual)
-
6X (8.1MB/sec)
CD-ROM
-
24X (3.6MB/sec)
CD-R
24X (3.6MB/sec)
24X (3.6MB/sec)
US-RW
24X (3.6MB/sec)
24X (3.6MB/sec)
HS-RW
10X (1.5MB/sec)
24X (3.6MB/sec)
CD-RW
4X (0.6MB/sec)
24X (3.6MB/sec)
-
5X (6.75MB/sec)
DVD-RAM
Data transfer mode
Interface
Buffer Memory
Drive Install Form
Size (W * H * L)
Buffer Protection
Lead Free
Light Scribe
Ultra DMA Mode 2: 33.3MB/sec, Multiword DMA mode2:
16.6MB/sec, PIO Mode 4: 16.7MB/sec
ATA/ATAPI (E-IDE)
2M
Horizontal / Vertical
128 X 12.7 X 129.0
yes
yes
no
[USB 2.0] SE-S084B Optical Storage
Disk Format
General Specifications
1. DISC TYPE
-
READ: MASTERED DISC, CD-R, CD-RW, DVD-ROM, DVD+R 4.7GB,
DVD+R DL 8.5GB, DVD+RW 4.7GB, DVD-R 3.95GB,
DVD-R 4.7GB Authoring, DVD-R 4.7GB General,
DVD-R DL 8.5GB, DVD-RW, DVD-RAM 4.7GB
-
WRITE: DVD4.7GB(DVD±R/RW, DVD-RAM), DVD±R DL(8.5GB),
CD-R/RW
-
Print: CD-R, DVD+/-R Light Scribe Media
2. DATA FORMAT:
-
CD: CD-DA, CD-ROM, MIXED-CD, CD-ROM XA, ENHANCED-CD,
CD-EXTRA/CD+, Photo-CD, VIDEO-CD, CD-TEXT, CD-G,
Multi-Session
-
DVD: DDVD-RAM, DVD-ROM, DVD-VIDEO, Multi-Session
(Read/Write), Multi-Border(Read/Write)
3. Recording mode
-
CD-R/RW: DAO, TAO, SAO, Packet Write(RW)
-
DVD+R/RW: Sequential, Random(RW)
-
DVD-R/RW: Incremental, DAO, Restricted Overwrite(RW)
-
DVD-RAM: Random
Data Transfer Rate MAX
www.samsungodd.com
Write
Read
DVD+R
8X (10.8MB/sec)
8X (10.8MB/sec)
DVD+RW
8X (10.8MB/sec)
8X (10.8MB/sec)
DVD+R DUAL
6X (8.1MB/sec)
8X (10.8MB/sec)
DVD-R DUAL
6X (8.1MB/sec)
8X (10.8MB/sec)
DVD-R
6X (8.1MB/sec)
8X (10.8MB/sec)
DVD-RW
6X (8.1MB/sec)
8X (10.8MB/sec)
DVD-ROM (Single)
-
8X (10.8MB/sec)
DVD-ROM (Dual)
-
8X (10.8MB/sec)
CD-ROM
-
24X (3.6MB/sec)
CD-R
24X (3.6MB/sec)
24X (3.6MB/sec)
US-RW
24X (3.6MB/sec)
24X (3.6MB/sec)
HS-RW
10X (1.5MB/sec)
24X (3.6MB/sec)
CD-RW
4X (0.6MB/sec)
24X (3.6MB/sec)
DVD-RAM
5X (6.75MB/sec)
5X (6.75MB/sec)
Access Time
CD 130ms (Random), DVD 160ms (Random)
Interface
USB 2.0
Buffer Memory
2M
Drive Install Form
Horizontal / Vertical
Size (W * H * L)
141mm (W) x 19mm (H) X 157mm (D)
Buffer Protection
yes
Lead Free
yes
Light Scribe
no
JANUARY 2009
S TOR AGE
Media Type
Optical Disk Drives
35
Disclaimer: The information in this publication has been carefully checked and is believed to be accurate at the time
of publication. Samsung assumes no responsibility, however, for possible errors or omissions, or for any consequences
resulting from the use of the information contained herein. Samsung reserves the right to make changes in its products
or product specifications with the intent to improve function or design at any time and without notice and is not
required to update this documentation to reflect such changes. This publication does not convey to a purchaser of
semiconductor devices described herein any license under the patent rights of Samsung or others. Samsung makes
no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does
Samsung assume any liability arising out of the application or use of any product or circuit and specifically disclaims any
and all liability, including without limitation any consequential or incidental damages.
Copyright 2009. Samsung and Samsung Semiconductor, Inc. are registered trademarks of Samsung Electronics, Co., Ltd.
All other names and brands may be claimed as the property of others. The appearance of all products, dates, figures,
diagrams and tables are subject to change at any time, without notice.
BR-09-ALL-001 Printed 01/09
Memory
DRAM
Flash
SRAM
MCP
Fusion
Storage
Solid State Drives
Hard Drives
Optical Disc Drives
System LSI
ASICs
APs
Display Drivers
Imaging ICs
Foundry
LCD Panels
TV
Monitors
Notebook PC
Mobile
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