Samsung Enterprise SSD 2013
Samsung OEM offering
PM843
SM843
SM843T
Availability
Feb 13
now
Feb 13; 960GB: March 13
on request
Interface
SATA 6.0Gbps
SATA 6.0Gbps
SATA 6.0Gbps
SAS 6G Dual port
Target Application
Read intensive, <10% Write
content & Streaming Servers, Low cost, Sequential
Read Performance
20-30% write
Boot Drive / Scratch Drive, Meta data (HPC), Web
server, Random read perfromance
40-50% write
extensive read and Write cache , Data warehousing, high edurance
optimized
60-70% write
Tier 0, Storage servers
a perfect trade-off between cost and edurance;
MLC based SSD with Storage Firmware
high Endurance and high performance
recommendations
for design-in
perferct cost sensitive, entry level, Low endurance,
Mid range endurance, High rentention, low latency
High rentention
SM1625
MZ7TD120HAFV- MZ7TD240HAFV- MZ7TD480HAGM- MZ7PD120HAFV- MZ7PD240HAFV- MZ7PD480HAGM- MZ7WD120HAFV- MZ7WD240HAFV- MZ7WD480HAGM- MZ7WD960HAGP- MZ6ER100HAFV- MZ6ER200HAG
000DA
000DA
000DA
000DA
000DA
000DA
00003
00003
00003
00003
00003
M-00003
Part numbers
Capacities
120 GB
240 GB
480 GB
120 GB
240 GB
480 GB
120 GB
240 GB
480 GB
960 GB
100 GB
MZ6ER400HAGL- MZ6ER800HAGL00003
00003
200 GB
400 GB
relative price ball park per GB
100%
113%
138%
338%
Retention
virgin SSD / by guaranteed endurance
10 years / 3 months
10 years / 3 months
10 years / 3 months
10 years / 3 months
Warranty (logical OR)
A
3 years OR TBW
TBW (Total Bytes Written) allowed
1) 100% 64KB Seq. Write
2)
2) 100% 4KB Rand. Write
3) 100% 8KB Rand. Write
Seq. Write @ 64KB
estimated allowed TBW per day
Ran. Write @ 4KB
for a life time of 3 years:
Ran. Write @ 8KB
WPD random / Sequencial write
(work load per day) D
5years OR TBW
5years OR TBW
207 TB
415 TB
830 TB
1 PB
2 PB
4 PB
2 PB
4 PB
8 PB
16 PB
4 PB
8 PB
16 PB
24 PB
52 TB2)
105TB
210TB
250 TB2)
500 TB
1 PB
500 TB2)
1 PB
2 PB
4 PB
1.8 PB3)
3.5 PB
7 PB
10 PB
207 GB
415 GB
830 GB
1 TB
2 TB
4 TB
2 TB
4 TB
8 TB
16 TB
4 TB
8 TB
16 TB
24 TB
52 GB
100 GB
210 GB
250 GB
500 GB
1 TB
500 GB
1 TB
2 TB
4 TB
1.8 TB
3.5 TB
7 TB
10 TB
0.6 / 2.5 @3 years
1 / 4 @ 5 years
2 / 8 @ 5 years
5 / 12 @ 5 years
Latency Random Read/ write
0.28 ms/ 0.11 ms
0.13 ms/ 0.08 ms
0.13 ms/ 0.08 ms
-
Controller
MDX (SATA 6.0G)
MDX (SATA 6.0G)
MDX (SATA 6.0G)
RDX (SAS Dual Port: 12.0G)
NAND
21nm 64Gb TLC
21nm 64Gb MLC
21nm 64Gb MLC
21nm 64Gb Ep-MLC
Form Factor
2.5” (7mm thickness)
2.5” (7mm thickness)
2.5” (7mm thickness)
2.5”(15mm thickness)
Data -loss Protection
None
None
Yes, Tantal Cap
Yes, Super Capacitor
Over-Provisioning
7%
7%
7%
28%
Yes
Yes
Yes
None
3.6W / 0.3W
3.4W / 0.3W
3.0W / 0.3W
9W / 4W ( 5V +12V )
520 / 330 MB/s
530 / 420 MB/s
500 / 400 MB/s
60KIOPS(TBD)
70 KIOPS
60 KIOPS
1.5/2.5/2.5 KIOPS
8.5 / 11.5 / 11.5 KIOPS
5.5 / 11 / 11 / 11 KIOPS
Smart ID read out and setting
Magician Tool Windows & Linux
Power Target
Typ. (Active Write) / Min. (idle)
Performance
5years OR TBW
Seq. Read / Write
@64k
Ran. Read
@4k
Ran. Write c
@4k
B
@ 128KB: Single Port : 497 / 435 MB/s
Dual Port : 902 / 740 MB/s
@4KB: Single Port : 72 KIOPS Dual Port : 101.5 KIOPS
8KB: Single Port: 50 KIOPS Dual Port: 81 KIOPS
@4KB: Single / Dual Port : 30 KIOPS / 60KIOPS
@8KB: 90 / 150 KIOPS
SSD vs. HDD: Smart ID & Life cycle The key advantage of SSD is its feature of having a forecastable life cycle. Lacking mechanical parts,
its life cycle depends strongly on writing of data which can be tracked by electrical commands, the so-called SMART IDs. Our Magicin
Tool for both windows and Linux platforms support you to track the amouth of data you write on SSD. If you track this over a period of
time in your environment, the extrapolation will provide you with an exact figure of the life cycle of your SSD. the TBW figures should
provide you an overview of expected life cycle.
Retention: Retention refers to the time that the cells in SSD are capable of
keeping the data before a refresh needs to take place. virgin SSD has up to 10
years retention based on the behavior of Flash cell built upon. The more the
Flash cell are written, the higher the cell wears off and and the leakage
current increases.by the consumption of TBW the retention declines to ~3
months.
SSD approach recommendation:
Endurance / life cycle: SSD is based on NAND Flash cells. The writting of cells is
1) Pre-selection based on needs on TBW and
a destructive process. The more the cell is written the more the cell is damged.
GB writes per day and targte application
The leakage current increases, retention decreases. If the SSD and so the cells
guide
are connected to power 24/7 as in the case of server implementation could be
2) Perform a proof of concept
assumed, the firware of SSD could be adjusted on increasing endurance, while
3) Implement concept in bigger scale
the refresh of cells can be adjusted.
4) Keep monitoring the smart IDs
Over-provisioning: The amount of the data intented to be written on SSD is not the same amount of data written on SSD. The
background is mainly the basic characteristics of Flash. Writing is done page-wise, but deleting happens on a block. Any SSD needs free
blocks to be able to write effectively. A designated physical area of the SSD which is not used for logical data allocations, called overprovisioning, helps the controller to allow for a broader write bandwidth. the higher the over-provisioning the better the write
perfromance, witha trade-off of losing blocks for physical data.
Virgin SSD / Preconditioning: a virgin SSD has a very high write bandwidth. As
soon as all cells are written to once, the bandwidth decreases partially
dramatically. Hence, before testing and evaluating SSD performance, make
sure to have written to all cells once. This is called preconditioning of an SSD
to get sustained results.
SSD as HDD replacement? SSD is not a direct HDD replacement. The writing
behavior of your application is key to a right choice of SSD. Check the TBW
figures and the calculated total GB per Day values to a get a feeling on each SSD
capabilities. The bandwidth and perfromance is the 2nd aspect to look into, and
last the latency.
A
B
C
D
Ver 13/ March 13
800 GB
TBW figures are prelimianry, and will be updated by the end of the year 2012, subject of change, please ask your Samsung sales representative for the latest information
sustained (after pre-conditioning) 100% 4KB random write IOPS 24 hrs x 7 days x 365 days
the higher the SSD density the higher the the write performance, the "up to" value refers to this aspect and reflects the performance of the highest density
Number of time that SSD capacity could be writteb in Random Writes per day for the specified period time given till TBW is consumed
all data are subject to changes without notice, please conatct Samsung channel partner in your region for latest update
TBW: Total Bytes Written is a key parameter for SSD. The
data is provided above for the life cycle and a guidance of
total GB per day. Nothing is more critical to SSD than the
write behavior of your application.
© Samsung Semiconductor Europe
Samsung DDR3 DRAM offering for Server : Green memory, Generation 2 (G2 = 30nm class)
Technology Node
Power
consumption at
100% loading*
Power
consumption at
idle *
Part Number
| || || || || ||| -
-
4Gb
30nm
2.6W
1.1W
M393B1G73BH0-YK0
1,35
| || || || || ||| -
-
2Gb
30nm
3.4W
1.0W
M393B5273DH0-YK0
1333
1,35
-
-
| || ||| ||| -
-
4Gb
30nm
25W
11.6W
M386B8G70BO0-YH9
4
1600
1,35
|
-
-
|| ||| ||| -
-
4Gb
30nm
13W
5.8W
M386B4G70BM0-YK0
16GB
4
1600
1,35
|
-
-
|| ||| ||| -
-
4Gb
30nm
6.7W
3.4W
M386B2K70DM0-YK0
8GB
2
1600
1,35
-
-
||
-
-
-
-
-
4Gb
30nm
2.7W
1.1W
M474B1G73BH0-YK0
4GB
2
1600
1,35
-
-
||
-
-
-
-
-
2Gb
30nm
2.5W
1.0W
M474B5273DH0-YK0
8GB
2
1600
1,35
-
-
||
-
-
-
-
-
4Gb
30nm
2.7W
1.1W
M391B1G73BH0-YK0
4GB
2
1600
1,35
-
-
||
-
-
-
-
-
2Gb
30nm
2.5W
1.0W
M391B5273DH0-YK0
32GB
4
1333
1,35
-
-
|
-
-
||
16GB
2
1600
1,35
| || || || || ||| -
8GB
2
1600
1,35
4GB
2
1600
Only for Ivybridge platform
64GB
4
Small adder vs. normal REG DIMMs. It makes sense for usage of starting 2 DPC or higher
population, due to higher bandwidth. Please note: slightly higher power consumption
than RDIMM
32GB
16GB RDIMM is a more preferred part.
800@1.5V
M393B2G70BH0-YK0
800@13.35V
2.4W
1066@1.5V
6.4W
1066@1.35V
30nm
1333@1.5V
4Gb
1333@1.35V
-
1600@1.5V
M393B4G70BM0-YH9
1600@1.35V
4.0W
Voltage
12W
Speed
30nm
Rank
4Gb
Density
Target Application
Syteme Behavior, Intel Xeon E5 max.
population: DIMM/Channel
Base Component
nominal speed
and voltage
ECC REG (standard height)
for max. 2TB in Westmere-EX 4 socket; needs 64 units, runs at 800;
adpot Load reduced DIMM Modules fro Sandybridge 4 socket boards
HPC, Cloud
Push product, highest flexibility , parity reached with 2x8GB
2 & more socket servers,
normal height of min. 1U, no
foot-print and space
Mainstream, highest volume and availability;
limitations
Legacy product, to maximize bandwidth in small memory configurations, e.g. 12GB per
Intel Xeon E5 2400 CPU
- |||
Load Reduced
BIG DATA, In-Memory , mainly
for
4 & more socket servers,
mainly 3 DPC, high density
while keeping up memory
bandwidth
ECC UNB / ECC UNB SO-DIMM
Dedicated server, Hosting
1 socket systems, 1600 speed
is not needed.
ECC UNB SODIMM : Not a standard product. Project-based support, close alignment
with Samsung sales required
ECC UNB : Standard Product
Speed compatibility:
1600 speed is downward compatible with 1333, 1066 and 800. The speed is automatically identified by system
BIOS and adjusted in the system based on the number of DIMMs per Channel (DPC). The speed adjustment is
explained in the table above for each module category. Beyond the system adjustments, some platforms offer
the option of speed enforcing with BIOS to a desired level (normally lower).
Voltage compatibility:
1,35V modules are upward compatible with 1,5V. i.e. a 1.35V Module will also work with a 1.5V setting. Many
systems of INTEL EPSD, Supermicro etc allow the users to enforce and adjust the memory voltage on BIOS level.
In this sense it is advisable to source 1.35V modules since they allow you to use them also at 1.5V. The voltage is
automatically identified by the system BIOS and adjusted in the system based on the number of DIMMs per
Channel (DPC).
Sourcing recommendation:
In order to reduce the amount of part numbers, consequently reducing the inventory level and increasing the
flexibility, Samsung recommends to generally use the 1600 1.35V parts. These parts come with no adder or
premium to other voltage and speed options, and they are downwards compatible through BIOS setting to the
desired speed and voltage seeting of your application. (coampare with the table on the right)
Ver 13/ Feb 2013
Process Technology :
The lower the number the more features come
with the parts. 1600 speed in combination with
1,35V is the main output of 30nm technology.
That is why Samsung does not ask for a
premium. And we recommend to focus on one
part number per product density to reduce the
inventory, easier planning and importing to
different plaforms and applications.
you can recognize the process technology on
the modues you use with hints on the Module
sticker.
G2 = 30nm; stands for Generation 2 of
Samsung Green Products
all data are subject to changes without notice, please conatct Samsung channel partner in your region for latest update
© Samsung Semiconductor Europe