S-5725 Series
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
www.sii-ic.com
Rev.2.5_00
© Seiko Instruments Inc., 2011-2015
The S-5725 Series, developed by CMOS technology, is a high-accuracy Hall IC that operates with a high-sensitivity, a highspeed detection and low current consumption.
The output voltage changes when the S-5725 Series detects the intensity level of magnetic flux density and a polarity
change. Using the S-5725 Series with a magnet makes it possible to detect the rotation status in various devices.
High-density mounting is possible by using the small SOT-23-3 or the super-small SNT-4A packages.
Due to its high-accuracy magnetic characteristics, the S-5725 Series can make operation's dispersion in the system
combined with magnet smaller.
Caution
This product is intended to use in general electronic devices such as consumer electronics, office
equipment, and communications devices. Before using the product in medical equipment or
automobile equipment including car audio, keyless entry and engine control unit, contact to SII is
indispensable.
 Features
• Pole detection:
• Detection logic for magnetism*1:
*1
• Output form :
• Magnetic sensitivity*1:
*1
• Operating cycle (current consumption) :
• Power supply voltage range:
• Operation temperature range:
• Built-in power-down circuit:
• Lead-free (Sn 100%), halogen-free
Bipolar latch
VOUT = "L" at S pole detection
VOUT = "H" at S pole detection
Nch open-drain output, CMOS output
BOP = 0.8 mT typ.
BOP = 1.8 mT typ.
BOP = 3.0 mT typ.
BOP = 7.0 mT typ.
tCYCLE = 50 μs (IDD = 1400.0 μA) typ.
tCYCLE = 1.25 ms (IDD = 60.0 μA) typ.
tCYCLE = 6.05 ms (IDD = 13.0 μA) typ.
VDD = 2.7 V to 5.5 V
Ta = −40°C to +85°C
Extends battery life (only SNT-4A)
*1. The option can be selected.
 Applications
• Plaything, portable game
• Home appliance
• Housing equipment
• Industrial equipment
 Packages
• SOT-23-3
• SNT-4A
Seiko Instruments Inc.
1
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-5725 Series
Rev.2.5_00
 Block Diagrams
1.
Nch open-drain output product
1. 1
Product without power-down function
VDD
OUT
Sleep / Awake logic
*1
*1
Chopping
stabilized amplifier
VSS
*1. Parasitic diode
Figure 1
1. 2
Product with power-down function (SNT-4A)
VDD
*1
Power-down circuit
Sleep / Awake logic
OUT
CE
*1
*1
*1
Chopping
stabilized amplifier
VSS
*1. Parasitic diode
Figure 2
2
Seiko Instruments Inc.
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-5725 Series
Rev.2.5_00
2.
CMOS output product
2. 1
Product without power-down function
VDD
Sleep / Awake logic
*1
*1
OUT
Chopping
stabilized amplifier
*1
VSS
*1. Parasitic diode
Figure 3
2. 2
Product with power-down function (SNT-4A)
VDD
*1
Power-down circuit
Sleep / Awake logic
*1
CE
OUT
*1
*1
*1
Chopping
stabilized amplifier
VSS
*1. Parasitic diode
Figure 4
Seiko Instruments Inc.
3
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-5725 Series
Rev.2.5_00
 Product Name Structure
1.
Product name
S-5725
x
x
B
x
x
-
xxxx
U
Environmental code
U: Lead-free (Sn 100%), halogen-free
Package name (abbreviation) and packing specifications*1
M3T1: SOT-23-3, Tape
I4T1:
SNT-4A, Tape
Magnetic sensitivity
9: BOP = 0.8 mT typ.
0: BOP = 1.8 mT typ.
1: BOP = 3.0 mT typ.
3: BOP = 7.0 mT typ.
Detection logic for magnetism
L: VOUT = "L" at S pole detection
H: VOUT = "H" at S pole detection
Pole detection
B: Bipolar latch
Output form
N: Nch open-drain output
C: CMOS output
Operating cycle
C: tCYCLE = 6.05 ms typ.
D: tCYCLE = 1.25 ms typ.
E: tCYCLE = 50 μs typ.
H: tCYCLE = 6.05 ms typ.
I:
tCYCLE = 1.25 ms typ.
J: tCYCLE = 50 μs typ.
(Without power-down function)
(Without power-down function)
(Without power-down function)
(With power-down function, SNT-4A)
(With power-down function, SNT-4A)
(With power-down function, SNT-4A)
*1. Refer to the tape drawing.
2.
Packages
Table 1 Package Drawing Codes
Package Name
SOT-23-3
SNT-4A
4
Dimension
Tape
Reel
Land
MP003-C-P-SD
PF004-A-P-SD
MP003-C-C-SD
PF004-A-C-SD
MP003-Z-R-SD
PF004-A-R-SD
−
PF004-A-L-SD
Seiko Instruments Inc.
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-5725 Series
Rev.2.5_00
3.
Product name list
3. 1
SOT-23-3
3. 1. 1
Nch open-drain output product
Table 2
Product Name
Operating Cycle
(tCYCLE)
Power-down
Function
Output Form
Nch open-drain
output
Nch open-drain
6.05 ms typ.
Unavailable
S-5725CNBL0-M3T1U
output
Nch open-drain
S-5725CNBL1-M3T1U
6.05 ms typ.
Unavailable
output
Nch open-drain
S-5725DNBL1-M3T1U
1.25 ms typ.
Unavailable
output
Nch open-drain
S-5725ENBL9-M3T1U
Unavailable
50 μs typ.
output
Nch open-drain
S-5725ENBL0-M3T1U
Unavailable
50 μs typ.
output
Nch open-drain
S-5725ENBL1-M3T1U
Unavailable
50 μs typ.
output
Nch open-drain
S-5725ENBH1-M3T1U
Unavailable
50 μs typ.
output
Remark Please contact our sales office for products other than the above.
S-5725CNBL9-M3T1U
3. 1. 2
6.05 ms typ.
Unavailable
Pole
Detection
Bipolar
latch
Bipolar
latch
Bipolar
latch
Bipolar
latch
Bipolar
latch
Bipolar
latch
Bipolar
latch
Bipolar
latch
Detection Logic
for Magnetism
VOUT = "L" at S pole
detection
VOUT = "L" at S pole
detection
VOUT = "L" at S pole
detection
VOUT = "L" at S pole
detection
VOUT = "L" at S pole
detection
VOUT = "L" at S pole
detection
VOUT = "L" at S pole
detection
VOUT = "H" at S pole
detection
Magnetic
Sensitivity
(BOP)
0.8 mT typ.
1.8 mT typ.
3.0 mT typ.
3.0 mT typ.
0.8 mT typ.
1.8 mT typ.
3.0 mT typ.
3.0 mT typ.
CMOS output product
Table 3
Product Name
Operating Cycle
(tCYCLE)
S-5725CCBL9-M3T1U
6.05 ms typ.
Unavailable
CMOS output
S-5725CCBL0-M3T1U
6.05 ms typ.
Unavailable
CMOS output
S-5725CCBL1-M3T1U
6.05 ms typ.
Unavailable
CMOS output
S-5725DCBL1-M3T1U
1.25 ms typ.
Unavailable
CMOS output
S-5725ECBL9-M3T1U
50 μs typ.
Unavailable
CMOS output
S-5725ECBL0-M3T1U
50 μs typ.
Unavailable
CMOS output
S-5725ECBL1-M3T1U
50 μs typ.
Unavailable
CMOS output
S-5725ECBH0-M3T1U
50 μs typ.
Unavailable
CMOS output
S-5725ECBH1-M3T1U
50 μs typ.
Unavailable
CMOS output
Power-down
Function
Output Form
Pole
Detection
Bipolar
latch
Bipolar
latch
Bipolar
latch
Bipolar
latch
Bipolar
latch
Bipolar
latch
Bipolar
latch
Bipolar
latch
Bipolar
latch
Detection Logic
for Magnetism
VOUT = "L" at S
detection
VOUT = "L" at S
detection
VOUT = "L" at S
detection
VOUT = "L" at S
detection
VOUT = "L" at S
detection
VOUT = "L" at S
detection
VOUT = "L" at S
detection
VOUT = "H" at S
detection
VOUT = "H" at S
detection
pole
pole
pole
pole
pole
pole
pole
pole
pole
Magnetic
Sensitivity
(BOP)
0.8 mT typ.
1.8 mT typ.
3.0 mT typ.
3.0 mT typ.
0.8 mT typ.
1.8 mT typ.
3.0 mT typ.
1.8 mT typ.
3.0 mT typ.
Remark Please contact our sales office for products other than the above.
Seiko Instruments Inc.
5
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-5725 Series
3. 2
Rev.2.5_00
SNT-4A
3. 2. 1
Nch open-drain output product
Table 4
Product Name
Operating Cycle
(tCYCLE)
Power-down
Function
Output Form
Nch open-drain
output
Nch open-drain
S-5725HNBH0-I4T1U
6.05 ms typ.
Available
output
Nch open-drain
S-5725INBH0-I4T1U
1.25 ms typ.
Available
output
Nch open-drain
S-5725JNBH0-I4T1U
Available
50 μs typ.
output
Remark Please contact our sales office for products other than the above.
S-5725ENBH3-I4T1U
3. 2. 2
50 μs typ.
Unavailable
Pole
Detection
Bipolar
latch
Bipolar
latch
Bipolar
latch
Bipolar
latch
Detection Logic
for Magnetism
VOUT = "H"
detection
VOUT = "H"
detection
VOUT = "H"
detection
VOUT = "H"
detection
at S pole
at S pole
at S pole
at S pole
Magnetic
Sensitivity
(BOP)
7.0 mT typ.
1.8 mT typ.
1.8 mT typ.
1.8 mT typ.
CMOS output product
Table 5
Product Name
Operating Cycle
(tCYCLE)
Power-down
Function
Output Form
S-5725ECBL9-I4T1U
50 μs typ.
Unavailable
CMOS output
S-5725ECBL0-I4T1U
50 μs typ.
Unavailable
CMOS output
S-5725ECBH0-I4T1U
50 μs typ.
Unavailable
CMOS output
S-5725HCBH0-I4T1U
6.05 ms typ.
Available
CMOS output
S-5725HCBH1-I4T1U
6.05 ms typ.
Available
CMOS output
S-5725ICBH0-I4T1U
1.25 ms typ.
Available
CMOS output
S-5725ICBH1-I4T1U
1.25 ms typ.
Available
CMOS output
S-5725JCBH0-I4T1U
50 μs typ.
Available
CMOS output
S-5725JCBH1-I4T1U
50 μs typ.
Available
CMOS output
Remark Please contact our sales office for products other than the above.
6
Seiko Instruments Inc.
Pole
Detection
Bipolar
latch
Bipolar
latch
Bipolar
latch
Bipolar
latch
Bipolar
latch
Bipolar
latch
Bipolar
latch
Bipolar
latch
Bipolar
latch
Detection Logic
for Magnetism
VOUT = "L" at S pole
detection
VOUT = "L" at S pole
detection
VOUT = "H" at S pole
detection
VOUT = "H" at S pole
detection
VOUT = "H" at S pole
detection
VOUT = "H" at S pole
detection
VOUT = "H" at S pole
detection
VOUT = "H" at S pole
detection
VOUT = "H" at S pole
detection
Magnetic
Sensitivity
(BOP)
0.8 mT typ.
1.8 mT typ.
1.8 mT typ.
1.8 mT typ.
3.0 mT typ.
1.8 mT typ.
3.0 mT typ.
1.8 mT typ.
3.0 mT typ.
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-5725 Series
Rev.2.5_00
 Pin Configurations
1.
SOT-23-3
Top view
1
2
Table 6
Pin No.
3
Symbol
Pin Description
1
VSS
GND pin
2
VDD
Power supply pin
3
OUT
Output pin
Figure 5
2.
SNT-4A
Table 7
Top view
1
2
4
3
Figure 6
Pin No.
Symbol
Description
1
VDD
Power supply pin
2
VSS
3
CE
4
OUT
GND pin
Enabling pin
"H": Enables operation
"L": Power-down
Output pin
Seiko Instruments Inc.
7
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-5725 Series
Rev.2.5_00
 Absolute Maximum Ratings
Table 8
Item
(Ta = +25°C unless otherwise specified)
Absolute Maximum Rating
Unit
Symbol
Power supply voltage
VDD
VSS − 0.3 to VSS + 7.0
Input voltage
VCE
VSS − 0.3 to VDD + 0.3
V
Output current
IOUT
±2.0
mA
Output voltage
Power dissipation
Nch open-drain output product
CMOS output product
SOT-23-3
SNT-4A
VOUT
PD
V
VSS − 0.3 to VSS + 7.0
V
VSS − 0.3 to VDD + 0.3
430*1
300*1
V
mW
mW
Operation ambient temperature
Topr
−40 to +85
°C
Storage temperature
Tstg
−40 to +125
°C
*1.
When mounted on board
[Mounted board]
(1) Board size:
(2) Name:
114.3 mm × 76.2 mm × t1.6 mm
JEDEC STANDARD51-7
Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical
damage. These values must therefore not be exceeded under any conditions.
Power Dissipation (PD) [mW]
600
SNT-4A
200
0
Figure 7
8
SOT-23-3
400
0
150
100
50
Ambient Temperature (Ta) [°C]
Power Dissipation of Package (When Mounted on Board)
Seiko Instruments Inc.
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-5725 Series
Rev.2.5_00
 Electrical Characteristics
1.
Product without power-down function
1. 1
S-5725CxBxx
Table 9
Item
Power supply voltage
Current consumption
(Ta = +25°C, VDD = 5.0 V, VSS = 0 V unless otherwise specified)
Test
Condition
Min.
Typ. Max.
Unit
Circuit
Symbol
VDD
IDD
−
Average value
Nch open-drain output
product
Output voltage
VOUT
Output transistor Nch,
IOUT = 2 mA
Output transistor Nch,
IOUT = 2 mA
CMOS output product
Output transistor Pch,
IOUT = −2 mA
Nch open-drain output product
Output transistor Nch, VOUT = 5.5 V
2.7
−
5.0
13.0
5.5
20.0
V
μA
−
1
−
−
0.4
V
2
−
−
0.4
V
2
VDD −
0.4
−
−
V
3
−
−
1
μA
4
Leakage current
ILEAK
Awake mode time
tAW
−
−
0.05
−
ms
−
Sleep mode time
tSL
−
−
6.00
−
ms
−
Operating cycle
tCYCLE
−
6.05
12.00
ms
−
1. 2
tAW + tSL
S-5725DxBxx
Table 10
Item
Power supply voltage
Current consumption
Output voltage
(Ta = +25°C, VDD = 5.0 V, VSS = 0 V unless otherwise specified)
Test
Condition
Min.
Typ. Max.
Unit
Circuit
Symbol
VDD
IDD
VOUT
−
Average value
Nch open-drain output
product
Output transistor Nch,
IOUT = 2 mA
Output transistor Nch,
IOUT = 2 mA
CMOS output product
Output transistor Pch,
IOUT = −2 mA
Nch open-drain output product
Output transistor Nch, VOUT = 5.5 V
2.7
−
5.0
60.0
5.5
90.0
V
μA
−
1
−
−
0.4
V
2
−
−
0.4
V
2
VDD −
0.4
−
−
V
3
−
−
1
μA
4
Leakage current
ILEAK
Awake mode time
tAW
−
−
0.05
−
ms
−
Sleep mode time
tSL
−
−
1.20
−
ms
−
Operating cycle
tCYCLE
−
1.25
2.50
ms
−
tAW + tSL
Seiko Instruments Inc.
9
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-5725 Series
1. 3
Rev.2.5_00
S-5725ExBxx
Table 11
Item
Power supply voltage
Current consumption
Output voltage
(Ta = +25°C, VDD = 5.0 V, VSS = 0 V unless otherwise specified)
Test
Condition
Min.
Typ.
Max.
Unit
Circuit
Symbol
VDD
IDD
VOUT
−
Average value
Nch open-drain output
product
Output transistor Nch,
IOUT = 2 mA
Output transistor Nch,
IOUT = 2 mA
CMOS output product
Output transistor Pch,
IOUT = −2 mA
Nch open-drain output product
Output transistor Nch, VOUT = 5.5 V
2.7
−
5.0
5.5
1400.0 2000.0
V
μA
−
1
−
−
0.4
V
2
−
−
0.4
V
2
VDD −
0.4
−
−
V
3
−
−
1
μA
4
Leakage current
ILEAK
Awake mode time
tAW
−
−
50
−
μs
−
Sleep mode time
tSL
−
−
0
−
μs
−
Operating cycle
tCYCLE
−
50
100
μs
−
10
tAW + tSL
Seiko Instruments Inc.
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-5725 Series
Rev.2.5_00
2.
Product with power-down function (SNT-4A)
2. 1
S-5725HxBxx
Table 12
Item
Power supply voltage
Current consumption
Current consumption during
power-down
Output voltage
(Ta = +25°C, VDD = 5.0 V, VSS = 0 V unless otherwise specified)
Test
Condition
Min.
Typ. Max. Unit
Circuit
Symbol
−
2.7
−
5.0
13.0
5.5
20.0
V
μA
−
1
VCE = VSS
−
−
1
μA
6
Nch open-drain
output product
−
−
0.4
V
2
−
−
0.4
V
2
VDD −
0.4
−
−
V
3
−
−
1
μA
4
VDD
IDD
Average value
IDD2
VOUT
Output transistor Nch,
IOUT = 2 mA
Output transistor Nch,
IOUT = 2 mA
CMOS output
product
Output transistor Pch,
IOUT = −2 mA
Nch open-drain output product
Output transistor Nch, VOUT = 5.5 V
Leakage current
ILEAK
Awake mode time
tAW
−
−
0.05
−
ms
−
Sleep mode time
tSL
−
−
6.00
−
ms
−
Operating cycle
tCYCLE
−
6.05
12.00
ms
−
Enabling pin input voltage "L"
VCEL
−
−
−
VDD ×
0.3
V
−
Enabling pin input voltage "H"
VCEH
−
VDD ×
0.7
−
−
V
−
Enabling pin input current "L"
ICEL
VDD = 5.0 V, VCE = 0 V
−1
−
1
μA
7
Enabling pin input current "H"
ICEH
VDD = 5.0 V, VCE = 5.0 V
−1
−
1
μA
8
Power-down transition time
tOFF
−
−
−
100
μs
−
Enable transition time
tON
−
−
−
100
μs
−
Output logic update time after
inputting "H" to enabling pin
tOE
−
−
−
200
μs
−
tAW + tSL
Seiko Instruments Inc.
11
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-5725 Series
2. 2
Rev.2.5_00
S-5725IxBxx
Table 13
Item
Power supply voltage
Current consumption
Current consumption during
power-down
Output voltage
(Ta = +25°C, VDD = 5.0 V, VSS = 0 V unless otherwise specified)
Test
Condition
Min.
Typ. Max.
Unit
Circuit
Symbol
−
2.7
−
5.0
60.0
5.5
90.0
V
μA
−
1
VCE = VSS
−
−
1
μA
6
Nch open-drain
output product
−
−
0.4
V
2
−
−
0.4
V
2
VDD −
0.4
−
−
V
3
−
−
1
μA
4
VDD
IDD
Average value
IDD2
VOUT
Output transistor Nch,
IOUT = 2 mA
Output transistor Nch,
IOUT = 2 mA
CMOS output
product
Output transistor Pch,
IOUT = −2 mA
Nch open-drain output product
Output transistor Nch, VOUT = 5.5 V
Leakage current
ILEAK
Awake mode time
tAW
−
−
0.05
−
ms
−
Sleep mode time
tSL
−
−
1.20
−
ms
−
Operating cycle
tCYCLE
−
1.25
2.50
ms
−
tAW + tSL
Enabling pin input voltage "L" VCEL
−
−
−
VDD ×
0.3
V
−
Enabling pin input voltage "H" VCEH
−
VDD ×
0.7
−
−
V
−
Enabling pin input current "L" ICEL
VDD = 5.0 V, VCE = 0 V
−1
−
1
μA
7
Enabling pin input current "H" ICEH
VDD = 5.0 V, VCE = 5.0 V
−1
−
1
μA
8
Power-down transition time
tOFF
−
−
−
100
μs
−
Enable transition time
tON
−
−
−
100
μs
−
Output logic update time after
tOE
inputting "H" to enabling pin
−
−
−
200
μs
−
12
Seiko Instruments Inc.
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-5725 Series
Rev.2.5_00
2. 3
S-5725JxBxx
Table 14
Item
Power supply voltage
Current consumption
Current consumption during
power-down
Output voltage
(Ta = +25°C, VDD = 5.0 V, VSS = 0 V unless otherwise specified)
Test
Condition
Min.
Typ.
Max. Unit
Circuit
Symbol
−
V
μA
−
1
1
μA
6
−
0.4
V
2
−
−
0.4
V
2
VDD −
0.4
−
−
V
3
−
−
1
μA
4
VDD
IDD
Average value
IDD2
VCE = VSS
−
−
Nch open-drain
output product
−
VOUT
Output transistor Nch,
IOUT = 2 mA
Output transistor Nch,
IOUT = 2 mA
CMOS output
product
Output transistor Pch,
IOUT = −2 mA
Nch open-drain output product
Output transistor Nch, VOUT = 5.5 V
2.7
−
5.0
5.5
1400.0 2000.0
Leakage current
ILEAK
Awake mode time
tAW
−
−
50
−
μs
−
Sleep mode time
tSL
−
−
0
−
μs
−
Operating cycle
tCYCLE
−
50
100
μs
−
Enabling pin input voltage "L"
VCEL
−
−
−
VDD ×
0.3
V
−
Enabling pin input voltage "H"
VCEH
−
VDD ×
0.7
−
−
V
−
Enabling pin input current "L"
ICEL
VDD = 5.0 V, VCE = 0 V
−1
−
1
μA
7
Enabling pin input current "H"
ICEH
VDD = 5.0 V, VCE = 5.0 V
−1
−
1
μA
8
Power-down transition time
tOFF
−
−
−
100
μs
−
Enable transition time
tON
−
−
−
100
μs
−
Output logic update time after
inputting "H" to enabling pin
tOE
−
−
−
200
μs
−
tAW + tSL
Seiko Instruments Inc.
13
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-5725 Series
Rev.2.5_00
 Magnetic Characteristics
1.
Product with BOP = 0.8 mT typ.
Table 15
Item
Operation point*1
S pole
Release point*2
N pole
Hysteresis width*3
2.
Symbol
BOP
BRP
BHYS
(Ta = +25°C, VDD = 5.0 V, VSS = 0 V unless otherwise specified)
Condition
Min.
Typ.
Max.
Unit
Test Circuit
−
0.1
0.8
1.5
mT
5
−
−1.5
−0.8
−0.1
mT
5
BHYS = BOP − BRP
−
1.6
−
mT
5
Product with BOP = 1.8 mT typ.
Table 16
Item
Operation point*1
S pole
Release point*2
N pole
Hysteresis width*3
3.
Symbol
BOP
BRP
BHYS
(Ta = +25°C, VDD = 5.0 V, VSS = 0 V unless otherwise specified)
Condition
Min.
Typ.
Max.
Unit
Test Circuit
−
0.9
1.8
2.7
mT
5
−
−2.7
−1.8
−0.9
mT
5
BHYS = BOP − BRP
−
3.6
−
mT
5
Product with BOP = 3.0 mT typ.
Table 17
(Ta = +25°C, VDD = 5.0 V, VSS = 0 V unless otherwise specified)
Item
Operation point*1
S pole
Release point*2
N pole
Hysteresis width*3
4.
Symbol
BOP
BRP
BHYS
Condition
−
−
BHYS = BOP − BRP
Min.
1.4
−4.0
−
Typ.
3.0
−3.0
6.0
Max.
4.0
−1.4
−
Unit
mT
mT
mT
Test Circuit
5
5
5
Product with BOP = 7.0 mT typ.
Table 18
(Ta = +25°C, VDD = 5.0 V, VSS = 0 V unless otherwise specified)
Item
*1
Operation point
S pole
*2
Release point
N pole
Hysteresis width*3
Symbol
BOP
BRP
BHYS
Condition
−
−
BHYS = BOP − BRP
Min.
5.0
−8.5
−
Typ.
7.0
−7.0
14.0
Max.
8.5
−5.0
−
Unit
mT
mT
mT
Test Circuit
5
5
5
*1. BOP: Operation point
BOP is the value of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux density applied
to the S-5725 Series by the magnet (S pole) is increased (by moving the magnet closer).
VOUT retains the status until a magnetic flux density of the N pole higher than BRP is applied.
*2. BRP: Release point
BRP is the value of magnetic flux density when the output voltage (VOUT) changes after the magnetic flux density applied
to the S-5725 Series by the magnet (N pole) is increased (by moving the magnet closer).
VOUT retains the status until a magnetic flux density of the S pole higher than BOP is applied.
*3. BHYS: Hysteresis width
BHYS is the difference between BOP and BRP.
Remark The unit of magnetic density mT can be converted by using the formula 1 mT = 10 Gauss.
14
Seiko Instruments Inc.
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-5725 Series
Rev.2.5_00
 Test Circuits
1.
Product without power-down function
A
*1
R
100 kΩ
VDD
VDD
S-5725
Series OUT
S-5725
Series OUT
VSS
VSS
*1.
A
V
Resistor (R) is unnecessary for the CMOS
output product.
Figure 8 Test Circuit 1
Figure 9 Test Circuit 2
VDD
VDD
S-5725
Series OUT
S-5725
Series OUT
VSS
A
VSS
V
Figure 10 Test Circuit 3
A
V
Figure 11 Test Circuit 4
R*1
100 kΩ
VDD
S-5725
Series OUT
VSS
*1.
V
Resistor (R) is unnecessary for the CMOS
output product.
Figure 12 Test Circuit 5
Seiko Instruments Inc.
15
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-5725 Series
2.
Rev.2.5_00
Product with power-down function (SNT-4A)
A
CE
VDD
R*1
100 kΩ
CE
S-5725
Series OUT
VDD
S-5725
Series OUT
VSS
VSS
*1.
CE
Figure 14 Test Circuit 2
VDD
CE
S-5725
Series OUT
VSS
A
A
V
A
*1
VDD
S-5725
Series OUT
VSS
S-5725
Series OUT
Figure 16 Test Circuit 4
R
100 kΩ
CE
VDD
VSS
V
Figure 15 Test Circuit 3
CE
V
Resistor (R) is unnecessary for the CMOS
output product.
VDD
R*1
100 kΩ
S-5725
Series OUT
VSS
*1.
Resistor (R) is unnecessary for the CMOS
output product.
Figure 17 Test Circuit 5
16
V
Resistor (R) is unnecessary for the CMOS
output product.
Figure 13 Test Circuit 1
*1.
A
Figure 18 Test Circuit 6
Seiko Instruments Inc.
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-5725 Series
Rev.2.5_00
A
CE
VDD
S-5725
Series OUT
VSS
A
CE
VDD
S-5725
Series OUT
VSS
Figure 19 Test Circuit 7
Figure 20 Test Circuit 8
Seiko Instruments Inc.
17
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-5725 Series
Rev.2.5_00
 Standard Circuits
1.
Product without power-down function
*1
R
100 kΩ
VDD
S-5725 Series
OUT
VSS
CIN
0.1 μF
*1. Resistor (R) is unnecessary for the CMOS output product.
Figure 21
2.
Product with power-down function (SNT-4A)
*1
R
100 kΩ
VDD
VDD
or
VSS
CE S-5725 Series
OUT
VSS
CIN
0.1 μF
*1. Resistor (R) is unnecessary for the CMOS output product.
Figure 22
Caution The above connection diagram and constant will not guarantee successful operation. Perform
thorough evaluation using the actual application to set the constant.
18
Seiko Instruments Inc.
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-5725 Series
Rev.2.5_00
 Operation
1.
Direction of applied magnetic flux
The S-5725 Series detects the magnetic flux density which is vertical to the marking surface.
Figure 23 and Figure 24 show the direction in which magnetic flux is being applied.
1. 1
SOT-23-3
1. 2
SNT-4A
N
S
N
S
Marking surface
Marking surface
Figure 23
2.
Figure 24
Position of Hall sensor
Figure 25 and Figure 26 show the position of Hall sensor.
The center of this Hall sensor is located in the area indicated by a circle, which is in the center of a package as
described below.
The following also shows the distance (typ. value) between the marking surface and the chip surface of a package.
2. 1
SOT-23-3
2. 2
SNT-4A
Top view
Top view
The center of Hall sensor;
in this φ 0.3 mm
1
2
1
The center of Hall sensor;
in this φ 0.3 mm
4
2
3
3
0.16 mm (typ.)
0.7 mm (typ.)
Figure 25
Figure 26
Seiko Instruments Inc.
19
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-5725 Series
3.
Rev.2.5_00
Basic operation
The S-5725 Series changes the output voltage (VOUT) according to the level of the magnetic flux density and a polarity
change (N pole or S pole) applied by a magnet.
Definition of the magnetic field is performed every operating cycle indicated in " Electrical Characteristics".
3. 1
Product with VOUT = "L" at S pole detection
When the magnetic flux density of the S pole perpendicular to the marking surface exceeds the operation point
(BOP) after the S pole of a magnet is moved closer to the marking surface of the S-5725 Series, VOUT changes from
"H" to "L". When the N pole of a magnet is moved closer to the marking surface of the S-5725 Series and the
magnetic flux density of the N pole is higher than the release point (BRP), VOUT changes from "L" to "H". In case of
BRP < B < BOP, VOUT retains the status.
Figure 27 shows the relationship between the magnetic flux density and VOUT.
VOUT
BHYS
H
L
N pole
0
BRP
BOP
S pole
Magnetic flux density (B)
Figure 27
3. 2
Product with VOUT = "H" at S pole detection
When the magnetic flux density of the S pole perpendicular to the marking surface exceeds BOP after the S pole of
a magnet is moved closer to the marking surface of the S-5725 Series, VOUT changes from "L" to "H". When the N
pole of a magnet is moved closer to the marking surface of the S-5725 Series and the magnetic flux density of the
N pole is higher than BRP, VOUT changes from "H" to "L". In case of BRP < B < BOP, VOUT retains the status.
Figure 28 shows the relationship between the magnetic flux density and VOUT.
VOUT
BHYS
H
L
N pole
BRP
0
Magnetic flux density (B)
Figure 28
20
Seiko Instruments Inc.
BOP
S pole
Rev.2.5_00
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-5725 Series
 Precautions
• If the impedance of the power supply is high, the IC may malfunction due to a supply voltage drop caused by feedthrough current. Take care with the pattern wiring to ensure that the impedance of the power supply is low.
• Note that the IC may malfunction if the power supply voltage rapidly changes.
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic
protection circuit.
• Large stress on this IC may affect on the magnetic characteristics. Avoid large stress which is caused by bend and
distortion during mounting the IC on a board or handle after mounting.
• SII claims no responsibility for any disputes arising out of or in connection with any infringement by products including
this IC of patents owned by a third party.
Seiko Instruments Inc.
21
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-5725 Series
Rev.2.5_00
 Marking Specifications
1.
SOT-23-3
Top view
(1) to (3):
(4):
1
Product code (Refer to Product name vs. Product code.)
Lot number
(1) (2) (3) (4)
2
3
Product name vs. Product code
1. 1
Nch open-drain output product
Product Code
Product Name
(1)
(2)
(3)
S-5725CNBL9-M3T1U
X
9
R
S-5725CNBL0-M3T1U
X
9
S
S-5725CNBL1-M3T1U
X
9
J
S-5725DNBL1-M3T1U
X
9
K
S-5725ENBL9-M3T1U
X
9
V
S-5725ENBL0-M3T1U
X
9
A
S-5725ENBL1-M3T1U
X
9
B
S-5725ENBH1-M3T1U
X
9
L
1. 2
CMOS output product
Product Name
S-5725CCBL9-M3T1U
S-5725CCBL0-M3T1U
S-5725CCBL1-M3T1U
S-5725DCBL1-M3T1U
S-5725ECBL9-M3T1U
S-5725ECBL0-M3T1U
S-5725ECBL1-M3T1U
S-5725ECBH0-M3T1U
S-5725ECBH1-M3T1U
22
Product Code
(1)
(2)
(3)
X
9
P
X
9
Q
X
9
T
X
9
U
X
9
W
X
9
X
X
9
C
X
9
Z
X
9
Y
Seiko Instruments Inc.
HIGH-SPEED BIPOLAR HALL EFFECT LATCH
S-5725 Series
Rev.2.5_00
2.
SNT-4A
Top view
(1) to (3):
1
Product code (Refer to Product name vs. Product code.)
4
(1) (2) (3)
2
3
Product name vs. Product code
2. 1
Nch open-drain output product
Product Code
Product Name
(1)
(2)
(3)
S-5725ENBH3-I4T1U
X
8
A
S-5725HNBH0-I4T1U
X
9
D
S-5725INBH0-I4T1U
X
9
F
S-5725JNBH0-I4T1U
X
9
H
2. 2
CMOS output product
Product Name
S-5725ECBL9-I4T1U
S-5725ECBL0-I4T1U
S-5725ECBH0-I4T1U
S-5725HCBH0-I4T1U
S-5725HCBH1-I4T1U
S-5725ICBH0-I4T1U
S-5725ICBH1-I4T1U
S-5725JCBH0-I4T1U
S-5725JCBH1-I4T1U
Product Code
(1)
(2)
(3)
X
9
W
X
9
X
X
9
Z
X
9
E
X
9
M
X
9
G
X
9
N
X
9
I
X
9
O
Seiko Instruments Inc.
23
2.9±0.2
1
2
3
0.16 +0.1
-0.06
0.95±0.1
1.9±0.2
0.4±0.1
No. MP003-C-P-SD-1.0
TITLE
SOT233-C-PKG Dimensions
No.
MP003-C-P-SD-1.0
SCALE
UNIT
mm
Seiko Instruments Inc.
+0.1
ø1.5 -0
4.0±0.1
2.0±0.1
+0.25
ø1.0 -0
0.23±0.1
4.0±0.1
1.4±0.2
3.2±0.2
1
2
3
Feed direction
No. MP003-C-C-SD-2.0
TITLE
SOT233-C-Carrier Tape
No.
MP003-C-C-SD-2.0
SCALE
UNIT
mm
Seiko Instruments Inc.
12.5max.
9.2±0.5
Enlarged drawing in the central part
ø13±0.2
No. MP003-Z-R-SD-1.0
SOT233-C-Reel
TITLE
MP003-Z-R-SD-1.0
No.
SCALE
UNIT
QTY.
mm
Seiko Instruments Inc.
3,000
1.2±0.04
3
4
+0.05
0.08 -0.02
2
1
0.65
0.48±0.02
0.2±0.05
No. PF004-A-P-SD-4.0
TITLE
SNT-4A-A-PKG Dimensions
PF004-A-P-SD-4.0
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
+0.1
ø1.5 -0
4.0±0.1
2.0±0.05
0.25±0.05
+0.1
5°
1.45±0.1
2
1
3
4
ø0.5 -0
4.0±0.1
0.65±0.05
Feed direction
No. PF004-A-C-SD-1.0
TITLE
SNT-4A-A-Carrier Tape
PF004-A-C-SD-1.0
No.
SCALE
UNIT
mm
Seiko Instruments Inc.
12.5max.
9.0±0.3
Enlarged drawing in the central part
ø13±0.2
(60°)
(60°)
No. PF004-A-R-SD-1.0
SNT-4A-A-Reel
TITLE
PF004-A-R-SD-1.0
No.
SCALE
UNIT
QTY.
mm
Seiko Instruments Inc.
5,000
0.52
2
1.16
0.52
0.35
1.
2.
0.3
1
(0.25 mm min. / 0.30 mm typ.)
(1.10 mm ~ 1.20 mm)
0.03 mm
1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package (1.10 mm to 1.20 mm).
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
1.
2.
(0.25 mm min. / 0.30 mm typ.)
(1.10 mm ~ 1.20 mm)
TITLE
SNT-4A-A-Land Recommendation
PF004-A-L-SD-4.1
No.
No. PF004-A-L-SD-4.1
SCALE
UNIT
mm
Seiko Instruments Inc.
www.sii-ic.com
•
•
The information described herein is subject to change without notice.
•
When the products described herein are regulated products subject to the Wassenaar Arrangement or other
agreements, they may not be exported without authorization from the appropriate governmental authority.
•
Use of the information described herein for other purposes and/or reproduction or copying without the
express permission of Seiko Instruments Inc. is strictly prohibited.
•
The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, vehicle equipment,
in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment, without prior
written permission of Seiko Instruments Inc.
•
•
The products described herein are not designed to be radiation-proof.
Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein
whose related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any specific
mass-production design.
Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the
failure or malfunction of semiconductor products may occur. The user of these products should therefore
give thorough consideration to safety design, including redundancy, fire-prevention measures, and
malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.