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INA180, INA2180
SBOS741A – APRIL 2017 – REVISED AUGUST 2017
INAx180 Low- and High-Side Voltage Output,
Current-Sense Amplifier
1 Features
3 Description
•
•
•
The INA180 and INA2180 (INAx180) current sense
amplifiers
are
designed
for
cost-optimized
applications. These devices are part of a family of
current-sense amplifiers (also called current-shunt
monitors) that sense voltage drops across currentsense resistors at common-mode voltages from –0.2
V to +26 V, independent of the supply voltage. The
INAx180 integrate a matched resistor gain network in
four, fixed-gain device options: 20 V/V, 50 V/V, 100
V/V, or 200 V/V. This matched gain resistor network
minimizes gain error and reduces the temperature
drift.
1
•
•
•
•
Common-Mode Range (VCM): –0.2 V to +26 V
High Bandwidth: 350 kHz
Offset Voltage:
– ±150 µV (Max) at VCM = 0 V
– ±500 µV (Max) at VCM = 12 V
Output Slew Rate: 2 V/µs
Accuracy:
– ±1% Gain Error (Max)
– 1-µV/°C Offset Drift (Max)
Gain Options:
– 20 V/V (A1 Devices)
– 50 V/V (A2 Devices)
– 100 V/V (A3 Devices)
– 200 V/V (A4 Devices)
Quiescent Current: 260 µA (Max)
Both the INA180 and INA2180 operate from a single
2.7-V to 5.5-V power supply. The single-channel
INA180 draws a maximum supply current of 260 µA;
whereas, the dual-channel INA2180 draws a
maximum supply current of 520 µA..
The INA180 is available in a 5-pin, SOT-23 package
with two different pin configurations. The INA2180 is
available in an 8-pin VSSOP package. All device
options are specified over the extended operating
temperature range of –40°C to +125°C.
2 Applications
•
•
•
•
•
•
Motor Control
Battery Monitoring
Power Management
Lighting Control
Overcurrent Detection
Solar Inverters
Device Information(1)
PART NUMBER
PACKAGE
BODY SIZE (NOM)
INA180
SOT-23 (5)
2.90 mm × 1.60 mm
INA2180(2)
VSSOP (10)
3.00 mm × 3.00 mm
(1) For all available packages, see the package option addendum
at the end of the datasheet.
(2) INA2180 is preview device.
Typical Application Circuit
Bus Voltage, VCM
Up To 26 V
Power Supply, VS
2.7 V to 5.5 V
CBYPASS
0.1 µF
RSENSE
Load
INA2180 (dual-channel)
INA180 (single-channel)
VS
Microcontroller
IN±
±
OUT
ADC
+
IN+
GND
Copyright © 2017, Texas Instruments Incorporated
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. UNLESS OTHERWISE NOTED, this document contains PRODUCTION
DATA.
INA180, INA2180
SBOS741A – APRIL 2017 – REVISED AUGUST 2017
www.ti.com
Table of Contents
1
2
3
4
5
6
7
8
Features ..................................................................
Applications ...........................................................
Description .............................................................
Revision History.....................................................
Device Comparison Table.....................................
Pin Configurations and Functions .......................
Specifications.........................................................
1
1
1
2
3
3
5
7.1
7.2
7.3
7.4
7.5
7.6
5
5
5
5
6
7
Absolute Maximum Ratings .....................................
ESD Ratings..............................................................
Recommended Operating Conditions.......................
Thermal Information ..................................................
Electrical Characteristics...........................................
Typical Characteristics ..............................................
Detailed Description ............................................ 13
8.1
8.2
8.3
8.4
Overview .................................................................
Functional Block Diagrams .....................................
Feature Description.................................................
Device Functional Modes........................................
13
13
14
15
9
Application and Implementation ........................ 17
9.1 Application Information............................................ 17
9.2 Typical Application .................................................. 21
10 Power Supply Recommendations ..................... 23
10.1 Common-Mode Transients Greater Than 26 V .... 23
11 Layout................................................................... 24
11.1 Layout Guidelines ................................................. 24
11.2 Layout Example .................................................... 24
12 Device and Documentation Support ................. 25
12.1
12.2
12.3
12.4
12.5
12.6
12.7
Documentation Support ........................................
Related Links ........................................................
Receiving Notification of Documentation Updates
Community Resources..........................................
Trademarks ...........................................................
Electrostatic Discharge Caution ............................
Glossary ................................................................
25
25
25
25
25
25
25
13 Mechanical, Packaging, and Orderable
Information ........................................................... 25
4 Revision History
Changes from Original (April 2017) to Revision A
•
2
Page
Added INA2180 device and associated content to data sheet............................................................................................... 1
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SBOS741A – APRIL 2017 – REVISED AUGUST 2017
5 Device Comparison Table
PRODUCT
CHANNEL
GAIN (V/V)
INA180A1
1
20
INA180A2
1
50
INA180A3
1
100
INA180A4
1
200
INA2180A1
2
20
INA2180A2
2
50
INA2180A3
2
100
INA2180A4
2
200
6 Pin Configurations and Functions
INA180: DBV Package
5-Pin SOT-23 (Pinout A)
Top View
OUT
1
GND
2
IN+
3
5
4
INA180: DBV Package
5-Pin SOT-23 (Pinout B)
Top View
VS
IN±
IN+
1
GND
2
IN±
3
Not to scale
5
VS
4
OUT
Not to scale
Pin Functions: INA180
PIN
NAME
SOT-23
Pinout A
SOT-23
Pinout B
I/O
DESCRIPTION
GND
2
2
Analog
IN–
4
3
Analog input
Current-sense amplifier negative input. For high-side applications,
connect to load side of sense resistor. For low-side applications, connect
to ground side of sense resistor.
IN+
3
1
Analog input
Current-sense amplifier positive input. For high-side applications, connect
to bus-voltage side of sense resistor. For low-side applications, connect
to load side of sense resistor.
OUT
1
4
Analog output
VS
5
5
Analog
Ground
Output voltage
Power supply, 2.7 V to 5.5 V
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SBOS741A – APRIL 2017 – REVISED AUGUST 2017
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INA2180: DGK Package(1)
8-Pin VSSOP
Top View
OUT1
1
8
VS
IN±1
2
7
OUT2
IN+1
3
6
IN±2
GND
4
5
IN+2
Not to scale
(1)
INA2180 is preview device. See Package Option Addendum at the end of the data sheet for more information.
Pin Functions: INA2180
PIN
NAME
NO.
I/O
DESCRIPTION
GND
4
Analog
IN–1
2
Analog input
Current-sense amplifier negative input for channel 1. For high-side applications, connect to
load side of channel-1 sense resistor. For low-side applications, connect to ground side of
channel-1 sense resistor.
IN+1
3
Analog input
Current-sense amplifier positive input for channel 1. For high-side applications, connect to
bus-voltage side of channel-1 sense resistor. For low-side applications, connect to load side of
channel-1 sense resistor.
IN–2
6
Analog input
Current-sense amplifier negative input for channel 2. For high-side applications, connect to
load side of channel-2 sense resistor. For low-side applications, connect to ground side of
channel-2 sense resistor.
IN+2
5
Analog input
Current-sense amplifier positive input for channel 2. For high-side applications, connect to
bus-voltage side of channel-2 sense resistor. For low-side applications, connect to load side of
channel-2 sense resistor.
OUT1
1
Analog output
Channel 1 output voltage
OUT2
7
Analog output
Channel 2 output voltage
VS
8
Analog
4
Ground
Power supply, 2.7 V to 5.5 V
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SBOS741A – APRIL 2017 – REVISED AUGUST 2017
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)
MIN
MAX
UNIT
6
V
Supply voltage, VS
Differential (VIN+) – (VIN–)
Analog inputs, IN+, IN– (2)
Common-mode (3)
Output voltage
–26
26
GND – 0.3
26
GND – 0.3
VS + 0.3
V
8
mA
150
°C
150
°C
150
°C
Maximum output current, IOUT
Operating free-air temperature, TA
–55
Junction temperature, TJ
Storage temperature, Tstg
(1)
(2)
(3)
–65
V
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
VIN+ and VIN– are the voltages at the IN+ and IN– pins, respectively.
Input voltage at any pin can exceed the voltage shown if the current at that pin is limited to 5 mA.
7.2 ESD Ratings
VALUE
V(ESD)
(1)
(2)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
UNIT
±3000
Charged-device model (CDM), per JEDEC specification JESD22-C101 (2)
V
±1000
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.3 Recommended Operating Conditions
MIN
NOM
MAX
–0.2
12
26
V
Operating supply voltage
2.7
5
5.5
V
Operating free-air temperature
–40
125
°C
VCM
Common-mode input voltage (IN+ and IN–)
VS
TA
UNIT
7.4 Thermal Information
THERMAL METRIC
INA180
INA2180
(PREVIEW)
DBV (SOT-23)
DGK (VSSOP)
(1)
UNIT
6 PINS
8 PINS
RθJA
Junction-to-ambient thermal resistance
197.1
TBD
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
95.8
TBD
°C/W
RθJB
Junction-to-board thermal resistance
53.1
TBD
°C/W
ψJT
Junction-to-top characterization parameter
23.4
TBD
°C/W
ψJB
Junction-to-board characterization parameter
52.7
TBD
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
N/A
TBD
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
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7.5 Electrical Characteristics
at TA = 25°C, VS = 5 V, VIN+ = 12 V, and VSENSE = VIN+ – VIN– (unless otherwise noted)
PARAMETER
CONDITIONS
MIN
TYP
84
100
MAX
UNIT
INPUT
CMRR
Common-mode rejection ratio,
RTI (1)
VOS
Offset voltage (2), RTI
dVOS/dT
PSRR
VIN+ = 0 V to 26 V, VSENSE = 10 mV,
TA = –40°C to +125°C
dB
±100
±500
VIN+ = 0 V
±25
±150
Offset drift, RTI
TA = –40°C to +125°C
0.2
1
μV/°C
Power-supply rejection ratio, RTI
VS = 2.7 V to 5.5 V, VSENSE = 10 mV
±8
±40
μV/V
VSENSE = 0 mV, VIN+ = 0 V
0.1
VSENSE = 0 mV
80
VSENSE = 0 mV
±0.05
IIB
Input bias current
IIO
Input offset current
μV
µA
µA
OUTPUT
A1 devices
G
Gain
EG
20
A2 devices
50
A3 devices
100
A4 devices
200
Gain error
VOUT = 0.5 V to VS – 0.5 V,
TA = –40°C to +125°C
Gain error vs temperature
TA = –40°C to +125°C
Nonlinearity error
VOUT = 0.5 V to VS – 0.5 V
Maximum capacitive load
No sustained oscillation
V/V
±0.1%
±1%
1.5
20
ppm/°C
±0.01%
1
nF
VOLTAGE OUTPUT (3)
VSP
Swing to VS power-supply rail (4)
VSN
(4)
Swing to GND
RL = 10 kΩ to GND, TA = –40°C to +125°C
(VS) – 0.02
(VS) – 0.03
V
RL = 10 kΩ to GND, TA = –40°C to +125°C
(VGND) +
0.0005
(VGND) +
0.005
V
FREQUENCY RESPONSE
BW
Bandwidth
SR
Slew rate
A1 devices, CLOAD = 10 pF
350
A2 devices, CLOAD = 10 pF
210
A3 devices, CLOAD = 10 pF
150
A4 devices, CLOAD = 10 pF
105
kHz
2
V/µs
40
nV/√Hz
NOISE, RTI
Voltage noise density
POWER SUPPLY
INA180
IQ
Quiescent current
INA2180
(preview)
(1)
(2)
(3)
(4)
6
VSENSE = 10 mV
197
VSENSE = 10 mV, TA = –40°C to +125°C
VSENSE = 10 mV
260
300
394
VSENSE = 10 mV, TA = –40°C to +125°C
520
µA
600
RTI = referred-to-input.
Offset voltage is obtained by linear extrapolation to VSENSE = 0 V with VSENSE = 10% to 90% of full-scale-range.
See Figure 19.
Swing specifications are tested with an overdriven input condition.
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7.6 Typical Characteristics
-165
-150
-135
-120
-105
-90
-75
-60
-45
-30
-15
0
15
30
45
60
75
90
105
120
135
150
-95
-85
-75
-65
-55
-45
-35
-25
-15
-5
5
15
25
35
45
55
65
75
85
95
105
115
Population
Population
at TA = 25°C, VS = 5 V, and VIN+ = 12 V (unless otherwise noted)
D001
Input Offset Voltage (PV)
Input Offset Voltage (PV)
D002
VIN+ = 0 V
VIN+ = 0 V
Figure 2. Input Offset Voltage Production Distribution A2
-80
-70
-60
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100
110
120
130
Population
-80
-70
-60
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
70
80
90
100
110
120
130
Population
Figure 1. Input Offset Voltage Production Distribution A1
D003
Input Offset Voltage (PV)
Input Offset Voltage (PV)
VIN+ = 0 V
D004
VIN+ = 0 V
Figure 3. Input Offset Voltage Production Distribution A3
Figure 4. Input Offset Voltage Production Distribution A4
100
A1
A2
A3
A4
Population
Offset Voltage (PV)
50
0
-100
-50
-25
0
25
50
75
Temperature (qC)
100
125
150
D005
-55
-50
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
35
40
45
50
-50
Common-Mode Rejection Ratio (PV/V)
VIN+ = 0 V
D006
Figure 5. Offset Voltage vs Temperature
Figure 6. Common-Mode Rejection Production Distribution
A1
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Typical Characteristics (continued)
-11
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
10
Population
-32
-29
-26
-23
-20
-17
-14
-11
-8
-5
-2
1
4
7
10
13
16
19
22
25
28
31
Population
at TA = 25°C, VS = 5 V, and VIN+ = 12 V (unless otherwise noted)
D007
Common-Mode Rejection Ratio (PV/V)
D008
Common-Mode Rejection Ratio (PV/V)
Figure 7. Common-Mode Rejection Production Distribution
A2
Figure 8. Common-Mode Rejection Production Distribution
A3
A1
A2
A3
A4
8
6
4
2
0
-2
-4
-6
-8
-10
-50
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
10
11
Population
Common-Mode Rejection Ratio (PV/V)
10
-25
0
25
50
75
Temperature (qC)
100
125
150
D010
D009
Common-Mode Rejection Ratio (PV/V)
Figure 10. Common-Mode Rejection Ratio vs Temperature
D011
-0.11
-0.1
-0.09
-0.08
-0.07
-0.06
-0.05
-0.04
-0.03
-0.02
-0.01
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
-0.125
-0.115
-0.105
-0.095
-0.085
-0.075
-0.065
-0.055
-0.045
-0.035
-0.025
-0.015
-0.005
0.005
0.015
0.025
0.035
0.045
0.055
0.065
0.075
0.085
Population
Population
Figure 9. Common-Mode Rejection Production Distribution
A4
Gain Error (%)
Gain Error (%)
Figure 11. Gain Error Production Distribution A1
8
D012
Figure 12. Gain Error Production Distribution A2
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Typical Characteristics (continued)
-0.23
-0.21
-0.19
-0.17
-0.15
-0.13
-0.11
-0.09
-0.07
-0.05
-0.03
-0.01
0.01
0.03
0.05
0.07
0.09
0.11
0.13
0.15
0.17
0.19
Population
-0.12
-0.11
-0.1
-0.09
-0.08
-0.07
-0.06
-0.05
-0.04
-0.03
-0.02
-0.01
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
Population
at TA = 25°C, VS = 5 V, and VIN+ = 12 V (unless otherwise noted)
Gain Error (%)
Gain Error (%)
D013
Figure 13. Gain Error Production Distribution A3
Figure 14. Gain Error Production Distribution A4
50
0.4
A1
A2
A3
A4
0.3
0.2
A1
A2
A3
A4
40
30
0.1
Gain (dB)
Gain Error (%)
D014
0
-0.1
20
10
-0.2
0
-0.3
-0.4
-50
-25
0
25
50
75
Temperature (qC)
100
125
-10
10
150
100
Figure 15. Gain Error vs Temperature
1M
10M
D016
140
Common-Mode Rejection Ratio (dB)
Power-Supply Rejection Ratio (dB)
10k
100k
Frequency (Hz)
Figure 16. Gain vs Frequency
120
100
80
60
40
20
0
10
1k
D015
100
1k
10k
Frequency (Hz)
100k
1M
100
80
60
40
20
10
D017
Figure 17. Power-Supply Rejection Ratio vs Frequency
A1
A2
A3
A4
120
100
1k
10k
Frequency (Hz)
100k
1M
D018
Figure 18. Common-Mode Rejection Ratio vs Frequency
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Typical Characteristics (continued)
at TA = 25°C, VS = 5 V, and VIN+ = 12 V (unless otherwise noted)
VS
120
–40°C
25°C
125°C
100
Input Bias Current (PA)
Output Swing (V)
VS – 1
VS – 2
GND + 2
GND + 1
80
60
40
20
0
GND
0
5
10
15
20 25 30 35 40
Output Current (mA)
45
50
55
-20
-5
60
0
5
10
15
20
Common-Mode Voltage (V)
D019
25
30
D020
Supply voltage = 5 V
Figure 19. Output Voltage Swing vs Output Current
Figure 20. Input Bias Current vs Common-Mode Voltage
120
85
84
100
Input Bias Current (PA)
Input Bias Current (PA)
83
80
60
40
20
82
81
80
79
78
77
0
-20
-5
76
0
5
10
15
20
Common-Mode Voltage (V)
25
75
-50
30
-25
D021
0
25
50
75
Temperature (qC)
100
125
150
D022
Supply voltage = 0 V
Figure 21. Input Bias Current vs Common-Mode Voltage
(Shutdown)
Figure 22. Input Bias Current vs Temperature
210
400
Quiescent Current (PA)
Quiescent Current (PA)
350
205
200
195
300
250
200
190
-50
-25
0
25
50
75
Temperature (qC)
100
125
150
-5
0
D023
Figure 23. Quiescent Current vs Temperature
10
150
5
10
15
20
Common-mode Voltage (V)
25
30
D031
Figure 24. Quiescent Current vs Common-Mode Voltage
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Typical Characteristics (continued)
at TA = 25°C, VS = 5 V, and VIN+ = 12 V (unless otherwise noted)
Input-Referred Voltage Noise (nV/—Hz)
100
Referred-to-Input
Voltage Noise (200 nV/div)
80
70
60
50
40
30
20
10
10 20
50 100
1000
10000
Frequency (Hz)
100000
Time (1 s/div)
1000000
D025
D024
Figure 25. Input-Referred Voltage Noise vs Frequency
VCM
VOUT
VOUT (100 mV/div)
Input Voltage
40 mV/div
Common-Mode Voltage (5 V/div)
Output Voltage
2 V/div
Figure 26. 0.1-Hz to 10-Hz Voltage Noise (Referred-to-Input)
Time (25 Ps/div)
Time (10 Ps/div)
D027
D026
80-mVPP input step
Figure 27. Step Response
Figure 28. Common-Mode Voltage Transient Response
Inverting Input
Output
Voltage (2 V/div)
Voltage (2 V/div)
Noninverting Input
Output
0V
0V
Time (250 Ps/div)
Time (250 Ps/div)
D028
Figure 29. Inverting Differential Input Overload
D029
Figure 30. Noninverting Differential Input Overload
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Typical Characteristics (continued)
at TA = 25°C, VS = 5 V, and VIN+ = 12 V (unless otherwise noted)
Voltage (1 V/div)
Supply Voltage
Output Voltage
Voltage (1 V/div)
Supply Voltage
Output Voltage
0V
0V
Time (10 Ps/div)
Time (100 Ps/div)
D030
D032
Figure 31. Start-Up Response
Output Impedance (:)
1000
500
200
100
50
Figure 32. Brownout Recovery
A1
A2
A3
A4
20
10
5
2
1
0.5
0.2
0.1
10
100
1k
10k
100k
Frequency (Hz)
1M
10M
D033
Figure 33. Output Impedance vs Frequency
12
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8 Detailed Description
8.1 Overview
The INA180 and INA2180 (INAx180) are 26-V, common-mode, current-sensing amplifiers used in both low-side
and high-side configurations. These specially-designed, current-sensing amplifiers accurately measures voltages
developed across current-sensing resistors on common-mode voltages that far exceed the supply voltage
powering the device. Current can be measured on input voltage rails as high as 26 V, and the devices can be
powered from supply voltages as low as 2.7 V.
8.2 Functional Block Diagrams
VS
INA180
IN±
±
OUT
+
IN+
GND
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Figure 34. INA180 Functional Block Diagram
VS
INA2180
IN1±
±
OUT1
+
IN1+
IN2±
±
OUT2
+
IN2+
GND
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Figure 35. INA2180 Functional Block Diagram
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8.3 Feature Description
8.3.1 High Bandwidth and Slew Rate
The INAx180 support small-signal bandwidths as high as 350 kHz, and large-signal slew rates of 2 V/µs. The
ability to detect rapid changes in the sensed current, as well as the ability to quickly slew the output, make the
INAx180 a good choice for applications that require a quick response to input current changes. One application
that requires high bandwidth and slew rate is low-side motor control, where the ability to follow rapid changing
current in the motor allows for more accurate control over a wider operating range. Another application that
requires higher bandwidth and slew rates is system fault detection, where the INAx180 are used with an external
comparator and a reference to quickly detect when the sensed current is out of range.
8.3.2 Wide Input Common-Mode Voltage Range
The INAx180 support input common-mode voltages from –0.2 V to +26 V. Because of the internal topology, the
common-mode range is not restricted by the power-supply voltage (VS) as long as VS stays within the operational
range of 2.7 V to 5.5 V. The ability to operate with common-mode voltages greater or less than VS allow the
INAx180 to be used in high-side, as well as low-side, current-sensing applications, as shown in Figure 36.
Bus Supply
±0.2 V to +26 V
Direction of Positive
Current Flow
IN+
RSENSE
High-Side Sensing
Common-mode voltage (VCM)
is bus-voltage dependent.
IN±
LOAD
Direction of Positive
Current Flow
IN+
RSENSE
Low-Side Sensing
Common-mode voltage (VCM)
is always near ground and is
isolated from bus-voltage spikes.
IN±
Figure 36. High-Side and Low-Side Sensing Connections
8.3.3 Precise Low-Side Current Sensing
When used in low-side current sensing applications the offset voltage of the INAx180 is less than 150 µV. The
low offset performance of the INAx180 has several benefits. First, the low offset allows the device to be used in
applications that must measure current over a wide dynamic range. In this case, the low offset improves the
accuracy when the sensed currents are on the low end of the measurement range. Another advantage of low
offset is the ability to sense lower voltage drop across the sense resistor accurately, thus allowing a lower-value
shunt resistor. Lower-value shunt resistors reduce power loss in the current sense circuit, and help improve the
power efficiency of the end application.
The gain error of the INAx180 is specified to be within 1% of the actual value. As the sensed voltage becomes
much larger than the offset voltage, this voltage becomes the dominant source of error in the current sense
measurement.
14
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Feature Description (continued)
8.3.4 Rail-to-Rail Output Swing
The INAx180 allow linear current sensing operation with the output close to the supply rail and GND. The
maximum specified output swing to the positive rail is 30 mV, and the maximum specified output swing to GND is
only 5 mV. In order to compare the output swing of the INAx180 to an equivalent operational amplifier (op amp),
the inputs are overdriven to approximate the open-loop condition specified in op amp data sheets. The currentsense amplifier is a closed-loop system; therefore, the output swing to GND can be limited by the product of the
offset voltage and amplifier gain.
For devices that have positive offset voltages, the swing to GND is limited by the larger of either the offset
voltage multiplied by the gain or the swing to GND specified in the Electrical Characteristics table.
For example, in an application where the INA180A4 (gain = 200 V/V) is used for low-side current sensing and the
device has an offset of 40 µV, the product of the device offset and gain results in a value of 8 mV, greater than
the specified negative swing value. Therefore, the swing to GND for this example is 8 mV. If the same device
has an offset of –40 µV, then the calculated zero differential signal is –8 mV. In this case, the offset helps
overdrive the swing in the negative direction, and swing performance is consistent with the value specified in the
Electrical Characteristics table.
The offset voltage is a function of the common-mode voltage as determined by the CMRR specification;
therefore, the offset voltage increases when higher common-mode voltages are present. The increase in offset
voltage limits how low the output voltage can go during a zero-current condition when operating at higher
common-mode voltages. The typical limitation of the zero-current output voltage vs common-mode voltage for
each gain option is shown in Figure 37.
0.06
A1
A2
A3
A4
Zero Current Output Voltage (V)
0.054
0.048
0.042
0.036
0.03
0.024
0.018
0.012
0.006
0
0
2
4
6
8 10 12 14 16 18 20 22 24 26
Common Mode Voltage (V)
D033
Figure 37. Zero-Current Output Voltage vs Common-Mode Voltage
8.4 Device Functional Modes
8.4.1 Normal Mode
The INAx180 is in normal operation when the following conditions are met:
• The power supply voltage (VS) is between 2.7 V and 5.5 V.
• The common-mode voltage (VCM) is within the specified range of –0.2 V to +26 V.
• The maximum differential input signal times gain is less than VS minus the output voltage swing to VS.
• The minimum differential input signal times gain is greater than the swing to GND (see the Rail-to-Rail Output
Swing section).
During normal operation, the device produces an output voltage that is the gained-up representation of the
difference voltage from IN+ to IN–.
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Device Functional Modes (continued)
8.4.2 Input Differential Overload
If the differential input voltage (VIN+ – VIN–) times gain exceeds the voltage swing specification, the INAx180 drive
the output as close as possible to the positive supply, and does not provide accurate measurement of the
differential input voltage. If this input overload occurs during normal circuit operation, then reduce the value of the
shunt resistor or use a lower-gain version with the chosen sense resistor to avoid this mode of operation. If a
differential overload occurs in a fault event, then the output of the INAx180 return to the expected value
approximately 20 µs after the fault condition is removed.
8.4.3 Shutdown Mode
Although the INAx180 do not have a shutdown pin, the low power consumption of the device allows the output of
a logic gate or transistor switch to power the INAx180. This gate or switch turns on and off the INAx180 powersupply quiescent current.
However, in current shunt monitoring applications, there is also a concern for how much current is drained from
the shunt circuit in shutdown conditions. Evaluating this current drain involves considering the simplified
schematic of the INAx180 in shutdown mode, as shown in Figure 38.
VS
2.7 V to 5.5 V
RPULL-UP
10 k
Bus Voltage
±0.2 V to +26 V
Shutdown
RSENSE
Load
CBYPASS
0.1 µF
VS
INA180
IN±
OUT
±
Output
+
IN+
GND
Copyright © 2017, Texas Instruments Incorporated
Figure 38. Basic Circuit to Shut Down the INxA180
There is typically slightly more than 500 kΩ of impedance (from the combination of 500-kΩ feedback and
input gain set resistors) from each input of the INAx180 to the OUT pin and to the GND pin. The amount of
current flowing through these pins depends on the voltage at the connection.
Regarding the 500-kΩ path to the output pin, the output stage of a disabled INAx180 does constitute a good path
to ground. Consequently, this current is directly proportional to a shunt common-mode voltage present across a
500-kΩ resistor.
As a final note, as long as the shunt common-mode voltage is greater than VS when the device is powered up,
there is an additional and well-matched 55-µA typical current that flows in each of the inputs. If less than VS, the
common-mode input currents are negligible, and the only current effects are the result of the 500-kΩ resistors.
16
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9 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The INAx180 amplify the voltage developed across a current-sensing resistor as current flows through the
resistor to the load or ground.
9.1.1 Basic Connections
Figure 39 shows the basic connections of the INA180. Connect the input pins (IN+ and IN–) as closely as
possible to the shunt resistor to minimize any resistance in series with the shunt resistor.
Bus Voltage
±0.2 V to +26 V
Power Supply, VS
2.7 V to 5.5 V
CBYPASS
0.1 µF
RSENSE
Load
VS
INA180
IN±
Microcontroller
OUT
±
ADC
+
IN+
GND
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NOTE: For best measurement accuracy, connect analog-to-digital converter (ADC) reference or microcontroller
ground as closely as possible to the INAx180 GND pin.
Figure 39. Basic Connections for the INA180
A power-supply bypass capacitor of at least 0.1 µF is required for proper operation. Applications with noisy or
high-impedance power supplies may require additional decoupling capacitors to reject power-supply noise.
Connect bypass capacitors close to the device pins.
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Application Information (continued)
9.1.2 RSENSE and Device Gain Selection
The accuracy of the INAx180 is maximized by choosing the current-sense resistor to be as large as possible. A
large sense resistor maximizes the differential input signal for a given amount of current flow and reduces the
error contribution of the offset voltage. However, there are practical limits as to how large the current-sense
resistor can be in a given application. The INAx180 have a typical input bias currents of 80 µA for each input
when operated at a 12-V common-mode voltage input. When large current-sense resistors are used, these bias
currents cause increased offset error and reduced common-mode rejection. Therefore, using current-sense
resistors larger than a few ohms is generally not recommended for applications that require current-monitoring
accuracy. A second common restriction on the value of the current-sense resistor is the maximum allowable
power dissipation that is budgeted for the resistor. Equation 1 gives the maximum value for the current sense
resistor for a given power dissipation budget:
PDMAX
RSENSE
IMAX2
where:
•
•
PDMAX is the maximum allowable power dissipation in RSENSE.
IMAX is the maximum current that will flow through RSENSE.
(1)
An additional limitation on the size of the current-sense resistor and device gain is due to the power-supply
voltage, VS, and device swing to rail limitations. In order to make sure that the current-sense signal is properly
passed to the output, both positive and negative output swing limitations must be examined. Equation 2 provides
the maximum values of RSENSE and GAIN to keep the device from hitting the positive swing limitation.
IMAX u RSENSE u GAIN < VS VSP
where:
•
•
•
•
IMAX is the maximum current that will flow through RSENSE.
GAIN is the gain of the current sense-amplifier.
VS is the minimum supply voltage of the device.
VSP is the positive output swing as specified in the data sheet.
(2)
To avoid positive output swing limitations when selecting the value of RSENSE, there is always a trade-off between
the value of the sense resistor and the gain of the device under consideration. If the sense resistor selected for
the maximum power dissipation is too large, then it is possible to select a lower-gain device in order to avoid
positive swing limitations.
The negative swing limitation places a limit on how small of a sense resistor can be used in a given application.
Equation 3 provides the limit on the minimum size of the sense resistor.
IMIN u RSENSE u GAIN > VSN
where:
•
•
•
18
IMIN is the minimum current that will flow through RSENSE.
GAIN is the gain of the current sense amplifier.
VSN is the negative output swing of the device (see Rail-to-Rail Output Swing ).
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Application Information (continued)
9.1.3 Signal Filtering
Provided that the INAx180 output is connected to a high impedance input, the best location to filter is at the
device output using a simple RC network from OUT to GND. Filtering at the output attenuates high-frequency
disturbances in the common-mode voltage, differential input signal, and INAx180 power-supply voltage. If filtering
at the output is not possible, or filtering of only the differential input signal is required, it is possible to apply a
filter at the input pins of the device. Figure 40 provides an example of how a filter can be used on the input pins
of the device.
Bus Voltage
±0.2 V to +26 V
RSENSE
Load
VS
2.7 V to 5.5 V
VS
INA180
RF < 10
RINT
IN±
CF
±
OUT VOUT
Bias
+
RF < 10
IN+
RINT
GND
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Figure 40. Filter at Input Pins
The addition of external series resistance creates an additional error in the measurement; therefore, the value of
these series resistors must be kept to 10 Ω (or less, if possible) to reduce impact to accuracy. The internal bias
network shown in Figure 40 present at the input pins creates a mismatch in input bias currents when a
differential voltage is applied between the input pins. If additional external series filter resistors are added to the
circuit, the mismatch in bias currents results in a mismatch of voltage drops across the filter resistors. This
mismatch creates a differential error voltage that subtracts from the voltage developed across the shunt resistor.
This error results in a voltage at the device input pins that is different than the voltage developed across the
shunt resistor. Without the additional series resistance, the mismatch in input bias currents has little effect on
device operation. The amount of error these external filter resistors add to the measurement can be calculated
using Equation 5, where the gain error factor is calculated using Equation 4.
The amount of variance in the differential voltage present at the device input relative to the voltage developed at
the shunt resistor is based both on the external series resistance (RF) value as well as internal input resistor RINT,
as shown in Figure 40. The reduction of the shunt voltage reaching the device input pins appears as a gain error
when comparing the output voltage relative to the voltage across the shunt resistor. A factor can be calculated to
determine the amount of gain error that is introduced by the addition of external series resistance. Calculate the
expected deviation from the shunt voltage to what is measured at the device input pins is given using Equation 4:
1250 u RINT
Gain Error Factor
(1250 u RF ) (1250 u RINT ) (RF u RINT )
where:
•
•
RINT is the internal input resistor.
RF is the external series resistance.
(4)
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Application Information (continued)
With the adjustment factor from Equation 4, including the device internal input resistance, this factor varies with
each gain version, as shown in Table 1. Each individual device gain error factor is shown in Table 2.
Table 1. Input Resistance
PRODUCT
GAIN
RINT (kΩ)
INAx180A1
20
25
INAx180A2
50
10
INAx180A3
100
5
INAx180A4
200
2.5
Table 2. Device Gain Error Factor
PRODUCT
SIMPLIFIED GAIN ERROR FACTOR
INAx180A1
25000
(21u RF ) 25000
INAx180A2
10000
(9 u RF ) 10000
INAx180A3
1000
RF 1000
INAx180A4
2500
(3 u RF ) 2500
The gain error that can be expected from the addition of the external series resistors can then be calculated
based on Equation 5:
Gain Error (%) = 100 - (100 ´ Gain Error Factor)
(5)
For example, using an INA180A2 and the corresponding gain error equation from Table 2, a series resistance of
10 Ω results in a gain error factor of 0.991. The corresponding gain error is then calculated using Equation 5,
resulting in an additional gain error of approximately 0.89% solely because of the external 10-Ω series resistors.
20
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9.2 Typical Application
Power Supply, VS
2.7 V to 5.5 V
CBYPASS
0.1 µF
Load
Supply
RSENSE
Load
VS
INA180
IN±
±
OUT
VOUT
+
IN+
GND
Copyright © 2017, Texas Instruments Incorporated
Figure 41. Low-Side Sensing
9.2.1 Design Requirements
The design requirements for the circuit shown in Figure 41, are listed in Table 3
Table 3. Design Parameters
DESIGN PARAMETER
EXAMPLE VALUE
Power-supply voltage, VS
5V
Low-side current sensing
VCM = 0 V
Mode of operation
Unidirectional
RSENSE power loss
< 900 mW
Maximum sense current, IMAX
40 A
Accuracy
Less than 1.5% at maximum current, TJ = 25°C
Small-signal bandwidth
> 80 kHz
9.2.2 Detailed Design Procedure
The maximum value of the current sense resistor is calculated based on the maximum power loss requirement.
By applying Equation 1, the maximum value of the current-sense resistor is calculated to be 0.563 mΩ. This is
the maximum value for sense resistor RSENSE; therefore, select RSENSE to be 0.5 mΩ because it is the closest
standard resistor value that meets the power-loss requirement.
The next step is to select the appropriate gain and reduce RSENSE, if needed, to keep the output signal swing
within the VS range. Using Equation 2, and given that IMAX = 40 A and RSENSE = 0.5 mΩ, the maximum currentsense gain calculated to avoid the positive swing-to-rail limitations on the output is 248.5. To maximize the output
signal range, the INA180A4 (gain = 200) device is selected for this application.
To calculate the accuracy at peak current, the two factors that must be determined are the gain error and the
offset error. The gain error of the INAx180 is specified to be a maximum of 1%. The error due to the offset is
constant, and is specified to be 125 µV (maximum) for the conditions where VCM = 0 V and VS = 5 V. Using
Equation 6, the percentage error contribution of the offset voltage is calculated to be 0.75%, with total offset error
= 150 µV, RSENSE = 0.5 mΩ, and ISENSE = 40 A.
Total Offset Error (V)
Total Offset Error (%) =
u 100%
ISENSE u RSENSE
(6)
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One method of calculating the total error is to add the gain error to the percentage contribution of the offset error.
However, in this case, the gain error and the offset error do not have an influence or correlation to each other. A
more statistically accurate method of calculating the total error is to use the RMS sum of the errors, as shown in
Equation 7.
Total Error (%) = Total Gain Error (%)2 + Total Offset Error (%)2
(7)
After applying Equation 7, the total current sense error at maximum current is calculated to be 1.25%, and that is
less than the design example requirement of 1.5%.
The gain-of-200 device also has a bandwidth of 105 kHz that meets the small-signal bandwidth requirement of
80 kHz. If higher bandwidth is required, lower-gain devices can be used at the expense of either reduced output
voltage range or an increased value of RSENSE.
9.2.3 Application Curve
Output Voltage (1 V/div)
An example output response of a unidirectional configuration is shown in Figure 42. The device output swing is
limited by ground; therefore, the output is biased to this zero output level. The output rises above ground for
positive differential input signals, but cannot fall below ground for negative differential input signals.
0V
Output
Ground
Time (500 µs/div)
Figure 42. Output Response
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10 Power Supply Recommendations
The input circuitry of the INAx180 accurately measures beyond the power-supply voltage, VS. For example, VS
can be 5 V, whereas the bus supply voltage at IN+ and IN– can be as high as 26 V. However, the output voltage
range of the OUT pin is limited by the voltages on the VS pin. The INAx180 also withstand the full differential
input signal range up to 26 V at the IN+ and IN– input pins, regardless of whether or not the device has power
applied at the VS pin.
10.1 Common-Mode Transients Greater Than 26 V
With a small amount of additional circuitry, the INAx180 can be used in circuits subject to transients higher than
26 V, such as automotive applications. Use only Zener diodes or Zener-type transient absorbers (sometimes
referred to as transzorbs)—any other type of transient absorber has an unacceptable time delay. Start by adding
a pair of resistors as a working impedance for the Zener diode; see Figure 43. Keep these resistors as small as
possible; most often, around 10 Ω. Larger values can be used with an effect on gain that is discussed in the
Signal Filtering section. This circuit limits only short-term transients; therefore, many applications are satisfied
with a 10-Ω resistor along with conventional Zener diodes of the lowest acceptable power rating. This
combination uses the least amount of board space. These diodes can be found in packages as small as SOT523 or SOD-523.
Bus Supply
±0.2 V to +26 V
VS
2.7 V to 5.5 V
CBYPASS
0.1 µF
RSENSE
Load
INA180
VS
IN±
±
RPROTECT
< 10
OUT
Output
+
IN+
GND
Copyright © 2017, Texas Instruments Incorporated
Figure 43. Transient Protection Using Dual Zener Diodes
In the event that low-power Zener diodes do not have sufficient transient absorption capability, a higher-power
transzorb must be used. The most package-efficient solution involves using a single transzorb and back-to-back
diodes between the device inputs, as shown in Figure 44. The most space-efficient solutions are dual, seriesconnected diodes in a single SOT-523 or SOD-523 package. In either of the examples shown in Figure 43 and
Figure 44, the total board area required by the INAx180 with all protective components is less than that of an
SO-8 package, and only slightly greater than that of an MSOP-8 package.
VS
2.7 V to 5.5 V
Bus Supply
±0.2 V to +26 V
CBYPASS
0.1 µF
RSENSE
Load
INA180
< 10
VS
IN±
±
Transorb
OUT
Output
+
< 10
IN+
GND
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Figure 44. Transient Protection Using a Single Transzorb and Input Clamps
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11 Layout
11.1 Layout Guidelines
•
•
Connect the input pins to the sensing resistor using a Kelvin or 4-wire connection. This connection technique
makes sure that only the current-sensing resistor impedance is detected between the input pins. Poor routing
of the current-sensing resistor commonly results in additional resistance present between the input pins.
Given the very low ohmic value of the current resistor, any additional high-current carrying impedance can
cause significant measurement errors.
Place the power-supply bypass capacitor as close as possible to the device power supply and ground pins.
The recommended value of this bypass capacitor is 0.1 µF. Additional decoupling capacitance can be added
to compensate for noisy or high-impedance power supplies.
11.2 Layout Example
Directio n Curr ent Flow
RSHU NT
IN- 4
3 IN+
2 GND
VS 5
1 OUT
Curren t
Sen se
VIA to Gro und
Plan e
CBYPASS
VS: 2.7 V to 5.5 V
Figure 45. Recommended Layout
24
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12 Device and Documentation Support
12.1 Documentation Support
12.1.1 Related Documentation
For related documentation see the following:
• INA180-181EVM User's Guide (SBOU183)
12.2 Related Links
Table 4 lists quick access links. Categories include technical documents, support and community resources,
tools and software, and quick access to sample or buy.
Table 4. Related Links
PARTS
PRODUCT FOLDER
SAMPLE & BUY
TECHNICAL
DOCUMENTS
TOOLS &
SOFTWARE
SUPPORT &
COMMUNITY
INA180
Click here
Click here
Click here
Click here
Click here
INA2181
Click here
Click here
Click here
Click here
Click here
12.3 Receiving Notification of Documentation Updates
To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper
right corner, click on Alert me to register and receive a weekly digest of any product information that has
changed. For change details, review the revision history included in any revised document.
12.4 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
12.5 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.6 Electrostatic Discharge Caution
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
12.7 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
13 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
Product Folder Links: INA180 INA2180
25
PACKAGE OPTION ADDENDUM
www.ti.com
16-Aug-2017
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
INA180A1IDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
18ID
INA180A1IDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
18ID
INA180A2IDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
1A8D
INA180A2IDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
1A8D
INA180A3IDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
1A9D
INA180A3IDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
1A9D
INA180A4IDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
1AAD
INA180A4IDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
1AAD
INA180B1IDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
18RD
INA180B1IDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
18RD
INA180B2IDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
1ABD
INA180B2IDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
1ABD
INA180B3IDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
1ACD
INA180B3IDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
1ACD
INA180B4IDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
1ADD
INA180B4IDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
1ADD
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
16-Aug-2017
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
16-Aug-2017
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
INA180A1IDBVR
SOT-23
DBV
5
3000
178.0
9.0
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
3.23
3.17
1.37
4.0
8.0
Q3
INA180A1IDBVT
SOT-23
DBV
5
250
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
INA180A2IDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
INA180A2IDBVT
SOT-23
DBV
5
250
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
INA180A3IDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
INA180A3IDBVT
SOT-23
DBV
5
250
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
INA180A4IDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
INA180A4IDBVT
SOT-23
DBV
5
250
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
INA180B1IDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
INA180B1IDBVT
SOT-23
DBV
5
250
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
INA180B2IDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
INA180B2IDBVT
SOT-23
DBV
5
250
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
INA180B3IDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
INA180B3IDBVT
SOT-23
DBV
5
250
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
INA180B4IDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
INA180B4IDBVT
SOT-23
DBV
5
250
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
16-Aug-2017
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
INA180A1IDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
INA180A1IDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
INA180A2IDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
INA180A2IDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
INA180A3IDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
INA180A3IDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
INA180A4IDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
INA180A4IDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
INA180B1IDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
INA180B1IDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
INA180B2IDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
INA180B2IDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
INA180B3IDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
INA180B3IDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
INA180B4IDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
INA180B4IDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
Pack Materials-Page 2
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