Integrated High-Frequency Modules for Defense and Homeland

Integrated High-Frequency Modules
for Defense and Homeland Security
Building on a legacy of high-frequency experience to deliver advanced integrated modules
“Our high sensitivity radar system
required a proven low residual
phase noise amplifier — and we
needed one fast. Endwave's
technical team nailed our
performance specification
and delivered a fully-compliant
prototype in just two weeks.”
Subcontracts Manager
A Major US Prime Defense Contractor
“Endwave has consistently demonstrated expertise
in millimeter-wave switching and transmit-receive
modules. Because the transceiver and RF switch array
are complementary parts of our weapons detection
scanner, they were the logical choice to provide both
critical pieces. We see Endwave as a valuable partner
as we commercialize our homeland security portals.”
Rick Rowe
CEO, SafeView, Inc.
I N N O VAT I V E
R E A L
W O R L D
T H I N K I N G
S O L U T I O N S
Multilithic Microsystems™ (MLMS)
The next generation in high-frequency circuits
Consistency and cost are two of the most common
challenges encountered in millimeter-wave module
production. In response, Endwave has developed Multilithic
Microsystems (MLMS). This advanced circuit technology uses
flip-chip and electromagnetic coupling methods to minimize
expensive semiconductor real estate while eliminating
lengthy interconnects and their related variability. MLMS
moves passive circuitry onto an inexpensive proprietary
substrate that processes with the ease of silicon, yet works
past 100 GHz. Only the discrete active FET or PHEMT devices
remain, which are then flip-mounted on top of the MLMS
substrate. This technology is extremely rugged, withstanding
As your system integration challenges increase
in complexity, you need a high-frequency
partner with experience you can lean on.
As your defense and homeland security systems move up in frequency and
down in budget, turn to Endwave Defense Systems. Advanced technology,
quick time-to-market, and consistent, high-quality manufacturing are the
hallmarks of our business philosophy. With an unparalleled library of circuit
building blocks at our fingertips, we can customize nearly any integrated
assembly imaginable — a claim backed by hundreds of thousands of
high-frequency modules delivered across various markets. Endwave’s
two decades of defense heritage include some of the most sophisticated
hi-rel military platforms.
Defense & homeland security program experience:
• Unmanned Aerial Vehicles (UAV)
• Missile Front-Ends, Exciters, and Fuzes
• Airborne Warning and Surveillance
• Secure Satellite Communications
• Attack Helicopters and Other Airborne Programs
• Automatic Landing Guidance (ALG) Systems
• Intelligent Battlefield Communications
• Phased-Array, Monopulse and Fire Control Radar
• Microwave Perimeter “Fences”
extreme temperature cycling and mechanical shock. With
MLMS, a complex transmitter or receiver can be placed on a
single, compact substrate with no bondwires in the RF path.
Epsilon Packaging™ Technology
Freeing you of the dependency on machined housings
A continuous exchange of technology breakthroughs and manufacturing
process improvements flows between our defense and commercial business
units. This commercial/defense balance allows us to deliver the MIL-SPEC
integrity and COTS mentality your applications require today.
Matching the right technology to your application
With Endwave Defense Systems, you get options. Your application will
be considered from all angles, and our solution will carefully weigh your
frequency of operation, quantity, environmental conditions, and critical
performance criteria. Whether your application requires an advanced
hybrid MIC circuit, custom GaAs PHEMT MMIC, or a proprietary
flip-chip design using our MLMS technology, we’ll employ the best
circuit technology for the job. Plus, we have the packaging know-how
to combine a variety of technologies — from SMT, to chip-on-board,
to bare chip-and-wire — into perfectly integrated modules that fit
seamlessly into your system architecture.
Conventional millimeter-wave thinking is rooted in the
belief that module housings have to be fabricated utilizing
costly machining and plating techniques. In many instances,
Endwave’s Epsilon Packaging eliminates this dependency
by replacing costly and heavy weight metal mechanicals
with metallized FR-4 and injection molded metallized
plastics. The Epsilon Packaging approach is applicable across
all of our product lines, and includes revolutionary mixed
technology integration, allowing chip-on-board and surface
mount technology components to co-exist, thus easing
assembly and reducing cost. Electrical shielding is achieved
Leverage our secure, flexible, world-class manufacturing facility
Endwave Defense Systems' premier 20,000 square foot, state-of-the-art
manufacturing facility is located in Diamond Springs, CA, approximately
30 miles east of Sacramento. Endwave uses lean manufacturing principles
to streamline production, improve efficiencies, minimize waste, and
ensure impeccable quality consistent with MIL specifications. In addition
to production of custom-designed Endwave solutions, we also offer you
our highly-automated, world-class factory for your build-to-print contract
manufacturing projects.
through the use of advanced shallow blind-via slot technology and conductive, metal-clad FR4 lids. Selective permeability
techniques prevent hydrogen poisoning while providing
field-proven environmental sealing. The end result is a package with no machined metal parts and is mass producible
with efficient heat extraction and minimal weight and size.
Our secure facility is SCIF and ISO-9001-2000 certified, and we recently
qualified to the more stringent aerospace AS9100 certification. It is the policy of Endwave to fully comply with all export regulations imposed by ITAR
and EAR.
Endwave. Plug Us In.
MFAs
F E A T U R E S
A N D
S P E C I F I C A T I O N S
• Custom Endwave Designs, or Build-to-Print
Manufacturing Services
• 1 to 94 GHz Frequency Capability
• Combine RF, LO, IF, and Digital Electronics
• Integrated RF Subsystems:
Amplifier Networks
Filtering & Equalization
RF Power Distribution
Frequency Conversion
Frequency Sources
Switches, Limiters, Detectors
Programmable Attenuators
Micro-Controllers
• MMIC, MIC, MLMSTM, EpsilonTM, and
SMT Technologies
• Automated Assembly and Test
• Design for Manufacturability (DFM)
• W/G and Coax Connector Options
• Environmental Screening (ESS)
• Hermetic Packaging
If you can imagine it, and the laws of physics allow it — we can design
it. Armed with an unparalleled library of circuit building-blocks at our
fingertips, Endwave Defense Systems combines multiple components
into a single, efficient, high-performance Multi-Function Assembly (MFA).
Take a JCA Amplifier™, a multiplier, a down-converter from Endwave’s
vast product portfolio-and build from there. Integrate other functionality,
such as filter banks, equalizers, power detectors, and digitally controlled
attenuators. The power of integration — removing cables, packaging,
and cost from your system electronics. From wide dynamic range limiting
amplifier distribution systems, to complete RF front-ends, our custom
MFA capability positions Endwave as your one-stop shop for all of
your RF to millimeter-wave electronics.
In addition to unsurpassed design capability, we also provide our
customers with build-to-print assembly and test services of their proven
MFA designs. Our high-volume business base enables us to amortize
overhead expenses over a large number of units, leverage our materials
purchasing power, and reduce manufacturing costs of your MFAs.
www.endwave.com
7
F E A T U R E S
JCA Amplifiers™
A N D
S P E C I F I C A T I O N S
• Amplifier modules to 94 GHz
• Low noise figure LNAs
• Low phase noise amplifiers
• Medium power amplifiers (< 5W)
• Multi-octave EW & ECM amps
• Narrowband communication amps
• Limiting amps
• Single-ended and balanced configurations
• Automated assembly available
Medium Power Capability
Output Power (dBm)
Typical Amplifier Output
40
35
30
25
20
15
10
0
10
20
30
40
50
60
70
80
Frequency (GHz)
Ultra Low Noise Figure Capability
At the heart of Endwave Defense Systems lies a comprehensive
Noise Figure (dB)
Typical Amplifier Noise Figure
line of amplifier products, inherited from our 2004 acquisition of
8
6
JCA Technology, Inc.— a recognized name in solid-state amplifiers
4
spanning RF to millimeter-wave frequencies. JCA Amplifiers use MIC
2
technology and integrate the best available semiconductor devices
0
0
10
20
30
40
50
60
70
with precise, repeatable thin-film hybrid construction to achieve tightly
80
toleranced noise, power, and bandwidth performance. Where possible,
Frequency (GHz)
we also provide MMIC-based amplifier solutions, leveraging our global
supply chain strength as one of the largest users of high-frequency MMIC
Low Phase Noise Capability
chips to ensure unit-to-unit consistency and the smallest of form factors.
Residual Phase Noise @ 9.5 GHz
Whether you need an LNA to establish the lowest possible noise figure
Phase Noise (dBc/Hz)
-100
on your radar front-end, or a limiting amplifier to protect your receiver
-110
-120
electronics from ECM jamming signals, we have a solution for you.
-130
Custom amplifier designs can typically be sampled in a matter of weeks.
-140
-150
Options:
-160
-170
100 Hz
• Integrated active & passive functions • Phase matching
1k Hz
10k Hz
100 kHz
1 MHz
10 MHz
Frequency Offset from Carrier
• Variable gain control
• Higher power
• TTL switching
• Gain matching
• Temperature compensation
• Various input/output connectors
• Input/output isolators
• Waveguide interfaces
• Output detector
• Bias-T output
• Integrated limiters
• Hermetic/non-hermetic
packaging options
JCA Amplifier search www.endwave.com
www.endwave.com
5
F E A T U R E S
Oscillators
A N D
S P E C I F I C A T I O N S
Endwave YIG Oscillators:
• Low phase noise: -105 dBc/Hz @ 10 kHz (typ.)
-128 dBc/Hz @ 100 kHz (typ.)
• Outstanding phase hit performance
• Metal injection molding (MIM) packaging
• 2 Base models for cost/performance trade-off
Mini-YIG Oscillator Features:
• Broad tunable BW = ± 1 GHz
• Frequency output, 3 –11 GHz
• Pout (typ.) = +14.5 dBm buffered
• +8.5V bias @ 100 mA of current
• SMA connectorized, square package
Micro-YIG Oscillator Features:
• Lower cost option, small footprint
• Tunable BW = ± 450 MHz
• Frequency output, 3–10 GHz
• Pout (typ.) = +3 dBm unbuffered,
+10 dBm buffered
• +8.5V bias @ 70 mA of current (buffered)
• SMA connectorized, circular package
Typical YIG performance
Parameter
Endwave Defense Systems’ YIG (Yttrium Iron Garnet) technology
UNITS
Micro YIG
Mini YIG
Frequency Range
GHz
3–10
3–11
Tuning Range
MHz
± 450
± 1000
Pout (Buffered)
dBm
10
14.5
RF
communications and instrumentation applications. In addition to their low
phase noise characteristic which is virtually independent of the operating
frequency, they provide large tunable bandwidths in comparison to
Dielectric Resonator Oscillators (DRO). Therefore, a wide frequency band
PHASE NOISE
Offset 1 kHz
dBc
-82
-82
can typically be spanned with a single YIG oscillator where several DROs
Offset 10 kHz
dBc
-105
-105
would otherwise be needed to obtain similar coverage. Endwave Defense
Offset 100 kHz
dBc
-128
-128
Systems provides YIG-tuned oscillators through Ku-Band, and these high
2nd/3rdHarmonic
dBc
-12
-12
Spurious
dBc
-60
-60
SPURS
fundamental frequencies also help to minimize spurious signals in the
DC Voltage
V
8.5
8.5
DC Current
mA
70
100
kHz/mA
5 ± 10%
5 ± 10%
Main Coil
Sensitivity
overall system design. Endwave YIG oscillators are available in two base
configurations, Micro-YIG and Mini-YIG, to address a range of packaging,
DC Supply
performance, and budget constraints.
Options:
• Customized bandwidths up to ± 1.5 GHz
Coil Impedance
Ohms
26
10
• Buffered & non-buffered output power
Modulation BW
kHz
35
10
• Male or female SMA output
kHz/mA
150 ± 20%
150 ± 20%
Ohms
1, 2 µH
1, 2 µH
FM Coil
Sensitivity
Coil Impedance
Modulation BW
kHz
400
400
Deviation
MHz
± 50
± 50
Packaging
6
provides a frequency source with high spectral purity for microwave
RF Interface
–
SMA-F
SMA-F
Outline Option
–
Circular
Rectangular
www.endwave.com
• TO-8 board-mount packages
• Other main coil and FM coil options
Synthesizers
F E A T U R E S
A N D
S P E C I F I C A T I O N S
• 4.5 to 13.75 GHz frequency capability
• Wide tuning range up to ± 1 GHz
• Typical phase noise: -100 dBc/Hz @ 10 kHz
-128 dBc/Hz @ 100 kHz
• Single loop and multi-loop configurations
• Robust microphonic & phase hit performance
Typical synthesizer performance
Parameter
UNITS
SYN
A
SYN
B
SYN
C
SYN
D
RF
Frequency Range
GHz 4.5–7.0
Tuning Range
GHz
1.5
1.5
2.75
Typical Step Size
kHz
250
250
500
1
–
Dual
Dual
Single
Single
RF Outputs
7.0–10.0 10.0–13.75 6.4–7.5
1.8
Pout
dBm
12
12
11
16
Pout Variation
dBm
±4
±4
±4
±3
–
SMA-F
SMA-F
SMA-F
SMA-F
-87
RF Interface
PHASE NOISE
Offset 1 kHz
dBc
-65
-65
-62
Offset 10 kHz
dBc
-105
-105
-93
-92
Offset 100 kHz
dBc
-128
-128
-119
-110
Offset 1MHz
dBc
-143
-143
-138
-125
SPURS
Endwave Defense Systems offers a variety of frequency synthesizers
Harmonic Spurious dBc
-30
-30
-30
-15
designed for applications where small step size, low phase-noise, broad
PLL Spurious
dBc
-70
-70
-62
-65
tuning range, and low power consumption are required. These products
Sub-Harmonics
dBc
-57
-57
-50
-65
are designed to meet the demanding requirements of field portable
SatCom terminals, high-resolution radar, control links for UAVs, and
test/measurement applications. Our capability includes both VCO and YIG
Typical SYN A Phase Noise Plot Over Temp
based designs to provide system designers a cost vs. performance option.
-50
The lowest phase noise available on the market is achieved through the
typically provide low noise performance of -105 dBc @ 10 kHz and
-128 dBc @ 100 kHz with tuning to ±1GHz. Standard frequencies
range from 4.5 to 13.75 GHz, in a variety of available step sizes.
These synthesizers are an ideal replacement for DROs and offer
optimal spectral purity with broad tuning ability. Low cost VCO options
can be provided with approximately 10 dB higher phase noise levels.
-60
-70
Phase Noise (dBc/Hz)
use of our permanent magnet Mini- and Micro-YIG oscillators. YIGs
-80
-90
-100
-110
-120
-130
-140
-150
100 Hz
1k Hz
10k Hz
100 kHz
1 MHz
Offset Frequency
Options:
• Mini- or Micro-YIG oscillator, or VCO-based oscillator
• Phase lock alarm
• Single or dual RF outputs
• Step sizes from a few Hz to several hundred kHz
• Wide output power range
• Bias voltage range from +5V to +15V
• Outstanding close-in phase noise
www.endwave.com
7
F E A T U R E S
Multipliers
A N D
S P E C I F I C A T I O N S
• 4 to 94 GHz output frequency capability
• Multiplication factors from X2 to X28
• Broadband models: octave plus bandwidth
• Narrowband models: 5 to 20% bandwidth
• Popular output bands (GHz):
18-26.5, 26-40, 40-60
Parameter
Unit
Doubler
Active
Tripler Quadrupler
Passive
Active
Input Frequency
GHz
10–20
4.5–5
6.6–10
Output Frequency
GHz
20–40
13.5–15
26–40
Input Power
dBm
+10
+15
+10
Output Power
dBm
+10
+1
+15
Harmonics
dBc
-20
-20
-15
DC Supply
V/mA
+12/240
0/0
+12/410
Output Power (dBm)
Typical Multiplier Output Power
35
30
25
20
15
10
0
20
40
60
80
100
Frequency (GHz)
Endwave Defense Systems’ frequency multipliers include a comprehensive
line of doublers, triplers, quadruplers, and higher order multiplication
schemes up to N = 28. Narrowband passive diode-based models provide
superior phase noise to within 1 dB of the theoretical limit of 20 Log N.
Active models using FETs or PHEMTs typically have broader bandwidth
and slightly higher phase noise, but allow the multiplier module to also
provide gain, if necessary. Options include operating voltages from +5V
to +24V, and DC bias can be configured for minimal current drain when
battery operation is required. Our capability provides multiplier output
frequencies from 4 GHz up to 94 GHz. Depending on desired filtering
and amplification, output power levels can exceed 2 watts.
Options:
• Single-ended or balanced design configurations
• Passive, diode-based designs
• Active, FET or PHEMT-based designs
• Output power amplification to > 2W
• Tailor-made input drive level
• Gain control
• Output filtering
• Built-in Test (BIT)
• I/O connector options include coax, waveguide, GPO
• Lower cost, non-hermetic packaging available
8
www.endwave.com
Up/Down-Converters
F E A T U R E S
A N D
S P E C I F I C A T I O N S
• Up/down-converters to 94 GHz
• IF coverage to 20 GHz
• Super-heterodyne, image/LO reject, and
sub-harmonic topologies
• Up-converter output power to +2W
• Down-converter noise figure to < 3 dB
Typical converter performance
Parameter
Unit
RF Start Freq
GHz
21.2
22.4
RF Stop Freq
GHz
22.4
23.6
LO Start Freq
GHz
6.65
6.65
LO Stop Freq
GHz
7.05
7.05
IF Freq
2.45
GHz
1.25
Conversion Gain
dB
22
29
Flatness (50 MHz)
dB
± 0.25
± 0.25
Noise Figure
dB
5.5
dBm
-7 (input)
Input VSWR
:1
1.92
2.0
Output VSWR
:1
1.75
1.8
dBm
5
8
Intercept Point
LO Input Power
Endwave Defense Systems’ up/down-converter capability spans a
reject filter, a mixer, and an IF output amplifier stage. Similarly, a typical
Power (dBm)
includes an RF chain consisting of a low-noise amplifier (LNA), image
up-converter lineup begins with an IF pre-amplifier and filter, a mixer,
40
35
30
25
20
15
10
5
0
0
followed by an LO-reject filter and power amplifier chain on the RF
20
include single-balanced, double-balanced, triple-balanced, image
or waveguide connectors.
80
100
10
Noise Figure (dB)
housed in a compact hermetic case and configured with either coaxial
60
Down-converter Noise Figure Capability
reject, and sub-harmonic configurations. An optional phase locked
synthesizer for generating the LO signal. The complete assemblies are
40
Frequency (GHz)
output. Various LO configurations are available, and mixer options
source can also be integrated to provide a self-contained on-board
32 (output)
Up-converter Saturated Output Power
wide range of RF & LO frequencies up through 94 GHz, with IF coverage
to 20 GHz. A typical lineup for an integrated down-converter assembly
Down-converter Up-converter
8
6
4
2
0
Options:
• On-board LO source or multipliers
0
20
40
60
80
100
Frequency (GHz)
• Input limiters
• Output detector
• Receive signal level (RSL)/receive signal strength indicator (RSSI)
• RF or IF gain control
• I/O isolators
• Lower cost, non-hermetic packaging options
www.endwave.com
9
I n t e g r a t e d Tr a n s c e i v e r s
F E A T U R E S
A N D
S P E C I F I C A T I O N S
• Frequency capability up through 94 GHz
• Integrated transmit, receive, and LO circuitry
• LO multiplication factor, XN (N = 1 to 12)
• Receiver noise figures to 3 dB
• Transmit output power to 2W
• Linear or non-linear operation
• Low spurious emissions
• Environmentally sealed and tested at
temperatures from -54°C to +100°C
Sample integrated transceiver specifications
Parameter
Unit
Receiver
Transmitter
RF Frequency
GHz
K-Band
–
LO Frequency
GHz
S-Band
–
IF Frequency
dBm
L-Band
–
Input P1dB
dBm
-70
–
dB
2.6
–
Noise Figure
Conversion Gain
dB
50
–
LO Input Power
dBm
+2
+2
Output Frequency
GHz
–
Q-Band
Input Frequency
GHz
–
S-Band
–
–
X16
Input Power
dBm
–
0
Output Power
dBm
–
+33
Multiplication Factor
You need a transmitter. You need a receiver. And you need them
combined into a high-performance, reliable T/R module solution that
makes integration into your overall system architecture a breeze. We’ve
become experts in eliminating cross-talk between transmit and receive
electronics — avoiding noise figure degradation due to digital logic,
modulation, and control signal interference — and suppressing LO
leakage that might otherwise weigh down your transmitter linearity.
Transceivers are our business, and they exemplify our dedication
to providing truly superior integrated modules for high-frequency
applications. They are delivered to your exact specifications and
come in a variety of form factors.
C-Band: 5.9 to 8.5 GHz
X-Band: 10.7 to 11.7 GHz
Ku-Band: 12.75 to 15.25 GHz
Lower K-Band: 17.7 to 19.7 GHz
Upper K-Band: 21.2 to 26.5 GHz
Lower Ka-Band: 27.5 to 33.4 GHz
Upper Ka-Band: 36 to 40 GHz
V-Band: 57 to 64 GHz
E-Band: 71 to 86 GHz
W-Band: 93 to 95 GHz
Options:
• Integrated LO synthesizers
• Transmitter power detection (accuracy to ± 1 dB)
• Transmitter gain control options, up to 50 dB
• Receiver gain control options, up to 30 dB
• Receiver limiter protection
• Receiver signal level (RSL)
• Models with on-board EEPROM for data storage/calibration
• Transmit muting function
• TX to RX loopback diagnostics
• Various DC power options
• Multiple I/O Options (coax, waveguide, multipin headers)
10
Popular T/R Frequency Bands:
www.endwave.com
F E A T U R E S
Switch Arrays
A N D
S P E C I F I C A T I O N S
• 1 to 94 GHz frequency capability
• Complex switch configurations for multiple I/Os
• Models up to SP16T
• High isolation, 35-40 dB typical
• Phase tracking to ± 2 degrees
• Amplitude matched outputs to ± 0.1 dB
• Switching speed to 2 nsec
Typical SP4T Switch Array Performance
-44
0
-1
-46
-2
-48
-3
-50
-4
-52
Isolation
Insertion Loss
Freq. Scale = 2 GHz/div
-5
-54
In addition to being the leader in TX and RX integration, Endwave
Fc = Ka Band
is proficient at integrating various switch configurations with other
Insertion Loss (IN to OUT 1– 4)
Isolation: Non-Adjacent Channels
Isolation: Adjacent Channels
high-frequency components such as filters, isolators, power splitters,
limiters, and amplifiers to form custom switch arrays. Harnessing our
proprietary library of building-block SPNT switches (where N = 1 to 4),
Switch Type
we have developed customized switch arrays up to SP16T in both
Insertion Loss
Isolation
VSWR
SPST (Matched)
3.0 dB
25 dB
2:1
narrowband and broadband configurations. They are available with
SPST (Reflective)
2.0 dB
20 dB
N/A
reflective or absorptive (non-reflective) topologies and are designed
SPDT (Reflective)
2.0 dB
10 dB
N/A
with a focus on low insertion loss, high ON/OFF isolation, and fast
SP3T (Reflective)
2.0 db
10 dB
N/A
switching speeds.
SP4T (Matched)
3.5 dB
20 dB
2:1
Matched Switch VSWR < 2:1 Under All Conditions
Reflective Switch VSWR < 2:1 in Low-Loss State Only
Both FET and Diode-Based Switches Available
Microwave and millimeter-wave switches are important signal
distribution products for many mission-critical defense and security
electronics. Applications range from portal scanners for weapons
and contraband detection, to electronic beam-steering for missiles
employing phased-array radar tracking.
Options:
• Integrated active or passive components
• On-board driver circuits for single-ended or differential control
interfaces (TTL, CMOS, ECL, etc.)
• Low current options
• Connector I/O options include coax, GPO, and waveguide
• Packaging options from surface-mount Epsilon Packaging™
to hermetically sealed modules
www.endwave.com
11
Cover: Soldiers Photo Courtesy of U.S. Army, Photographer: Staff Sgt. Joseph Roberts. Cover: Predator Photo Courtesy of U.S. Air Force. Page 3: Helicopter Photo Courtesy of U.S. Air Force, Photographer: Staff Sgt. Andy Dunaway.
Positioned to be your long-term high-frequency partner
Originally incorporated in 1991 as Endgate Corporation — a
Silicon Valley start-up focused on high-frequency circuits for
satellite communications — Endwave Corporation is now a
global company with operations in California, Massachusetts
and Thailand. In 2000, the company merged with TRW
Milliwave, a respected RF subsystem supplier to the defense
industry, and renamed the company Endwave. In addition
to significant investments in high-frequency research and
development, Endwave has invested in acquiring assets
from divisions of M/A-COM, Signal Technology Corporation,
Verticom, Arcom, and most recently the JCA Technology
division from Bookham plc.
In early 2005, Endwave Defense Systems was announced
as an Operating Division of Endwave. This dedicated group
is leveraging our combined defense experience and modern
facilities to quickly deliver modules with more value-added
performance and a superior level of integration.
Endwave Corporation is recognized by the U.S. Small Business Administration
(SBA), and our state-of-the-art facilities are ISO 9001-2000, AS9100, and
SCIF certified. We are a publicly traded company on NASDAQ under the
symbol ENWV.
www.endwave.com
Sales and West Coast Design Center
776 Palomar Avenue, Sunnyvale, CA 94085
P: 408.522.3100 • F: 408.522.3102
Email: sales@endwave.com
Manufacturing
6425 Capitol Avenue, Diamond Springs, CA 95619
P: 530.295.6000 • F: 530.642.8002
Northeast Design Center
1 Technology Drive, Suite 310, Andover, MA 01810
P: 978.686.4400 • F: 978.686.6612
Please visit our Web site for a full list of Endwave sales representatives and contacts.
© 2006 Endwave Corporation. All rights reserved worldwide. Endwave, ENWV, Endwave Defense Systems, Multilithic Microsystems, MLMS, Epsilon Packaging, Epsilon, and JCA Amplifiers are trademarks of Endwave Corporation.
EDSISM06052.5M
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