TC2876
REV4_20070507
5 W Low-Cost Packaged PHEMT GaAs Power FETs
FEATURES
PHOTO ENLARGEMENT
• 5 W Typical Output Power at 6 GHz
• 7 dB Typical Linear Power Gain at 6 GHz
• High Linearity: IP3 = 47 dBm Typical at 6 GHz
• High Power Added Efficiency:
Nominal PAE of 40 % at 6 GHz
• Suitable for High Reliability Application
• Breakdown Voltage: BVDGO ≥ 18 V
• Lg = 0.6 µm, Wg = 12 mm
• Tight Vp ranges control
• High RF input power handling capability
• 100 % DC Tested
• Low Cost Ceramic Package
DESCRIPTION
The TC2876 is packaged with the TC1806 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs
Power chip. The Cu-based ceramic package provides excellent thermal conductivity for the GaAs FET. All
devices are 100% DC tested to assure consistent quality. Typical applications include high dynamic range power
amplifiers for commercial and military high performance power applications.
ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol
CONDITIONS
P1dB
Output Power at 1dB Gain Compression Point , f = 6 GHz VDS = 8 V, IDS = 1200 mA
GL
Linear Power Gain, f = 6 GHz VDS = 8 V, IDS = 1200 mA
MIN
TYP
MAX UNIT
36
36.5
dBm
7
dB
rd
IP3
Intercept Point of the 3 -order Intermodulation, f = 6 GHz VDS = 8 V, IDS = 1200 mA, *PSCL = 23 dBm
47
dBm
PAE
Power Added Efficiency at 1dB Compression Power, f = 6 GHz
40
%
IDSS
Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V
3
A
gm
Transconductance at VDS = 2 V, VGS = 0 V
2000
mS
VP
Pinch-off Voltage at VDS = 2 V, ID = 24 mA
-1.7**
Volts
22
Volts
3.5
°C/W
BVDGO Drain-Gate Breakdown Voltage at IDGO =6 mA
Rth
18
Thermal Resistance
Note: * PSCL: Output Power of Single Carrier Level.
** For the tight control of the pinch-off voltage range, we divide TC2876 into 3 model numbers to fit customer design requirement
(1)TC2876P1519 : Vp = -1.5V to -1.9V (2)TC2876P1620 : Vp = -1.6V to -2.0V (3)TC2876P1721 : Vp = -1.7V to -2.1V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
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TC2876
REV4_20070507
ABSOLUTE MAXIMUM RATINGS (TA=25 °C)
Symbol
VDS
VGS
IDS
Pin
PT
TCH
TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
Rating
12 V
-5 V
IDSS
33 dBm
12 W
175 °C
- 65 °C to +175 °C
RECOMMANDED OPERATING CONDITION
Symbol
VDS
ID
Parameter
Drain to Source Voltage
Drain Current
Rating
8V
1200 mA
HANDLING PRECAUTIONS:
The user must operate in a clean, dry environment.
Electrostatic Discharge (ESD) precautions should be
observed at all stages of storage, handling, assembly, and
testing. The static discharge must be less than 300V.
OUTLINE DIMENSIONS (Unit: inch)
2 PLCS
2 PLCS
4 PLCS
4 PLCS
4 PLCS
4 SIDES
TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
Web-Site: www.transcominc.com.tw
Phone: 886-6-5050086
Fax: 886-6-5051602
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