MoBL® CY62126EV30, 1-Mbit (64K x 16) Static RAM

CY62126EV30 MoBL
1-Mbit (64K x 16) Static RAM
Features
■
High speed: 45 ns
■
Temperature ranges
❐ Industrial: –40 °C to +85 °C
❐ Automotive: –40 °C to +125 °C
■
Wide voltage range: 2.2 V to 3.6 V
■
Pin compatible with CY62126DV30
■
Ultra low standby power
❐ Typical standby current: 1 A
❐ Maximum standby current: 4 A
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life(MoBL®) in portable
applications such as cellular telephones. The device also has an
automatic power down feature that significantly reduces power
consumption when addresses are not toggling. Placing the
device in standby mode reduces power consumption by more
than 99 percent when deselected (CE HIGH). The input and
output pins (I/O0 through I/O15) are placed in a high impedance
state when the device is deselected (CE HIGH), the outputs are
disabled (OE HIGH), both Byte High Enable and Byte Low
Enable are disabled (BHE, BLE HIGH) or during a write
operation (CE LOW and WE LOW).
To write to the device, take Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data
from I/O pins (I/O0 through I/O7) is written into the location
specified on the address pins (A0 through A15). If Byte High
Enable (BHE) is LOW, then data from I/O pins (I/O8 through
I/O15) is written into the location specified on the address pins
(A0 through A15).
■
Ultra low active power
❐ Typical active current: 1.3 mA at f = 1 MHz
■
Easy memory expansion with CE and OE features
■
Automatic power down when deselected
■
Complementary metal oxide semiconductor (CMOS) for
optimum speed and power
■
Offered in Pb-free 48-ball very fine pitch ball grid array (VFBGA)
and 44-pin thin small outline package (TSOP) II packages
Functional Description
To read from the device, take Chip Enable (CE) and Output
Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If
Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appear on I/O0 to I/O7. If
Byte High Enable (BHE) is LOW, then data from memory
appears on I/O8 to I/O15. See the “Truth Table” on page 11 for a
complete description of read and write modes.
For best practice recommendations, refer to the Cypress
application note AN1064, SRAM System Guidelines.
The CY62126EV30 is a high performance CMOS static RAM
organized as 64K words by 16 bits. This device features
Logic Block Diagram
SENSE AMPS
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
ROW DECODER
DATA IN DRIVERS
64K x 16
RAM Array
I/O0–I/O7
I/O8–I/O15
•
BHE
WE
CE
OE
BLE
A15
A14
A13
A11
Cypress Semiconductor Corporation
Document #: 38-05486 Rev. *H
A12
COLUMN DECODER
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised December 17, 2010
CY62126EV30 MoBL
Contents
Pin Configuration ............................................................. 3
Maximum Ratings............................................................. 4
Operating Range............................................................... 4
Electrical Characteristics................................................. 4
Capacitance ...................................................................... 5
Thermal Resistance.......................................................... 5
Data Retention Characteristics ....................................... 6
Switching Characteristics................................................ 7
Switching Waveforms ...................................................... 8
Truth Table ...................................................................... 11
Document #: 38-05486 Rev. *H
Ordering Information......................................................
Ordering Code Definitions .........................................
Package Diagrams..........................................................
Acronyms ........................................................................
Document History Page .................................................
Sales, Solutions, and Legal Information ......................
Worldwide Sales and Design Support.......................
Products ....................................................................
PSoC Solutions .........................................................
12
12
13
14
15
16
16
16
16
Page 2 of 16
CY62126EV30 MoBL
Pin Configuration
Figure 2. 44-Pin TSOP II (Top View) [1]
Figure 1. 48-Ball VFBGA (Top View)
1
2
3
4
5
6
BLE
OE
A0
A1
A2
NC
A
I/O8
BHE
A3
A4
CE
I/O0
B
I/O9
I/O10
A5
A6
I/O1
I/O2
C
VSS
I/O11
NC
A7
I/O3
Vcc
D
VCC
I/O12
NC
NC
I/O4
Vss
E
I/O14
I/O13
A14
A15
I/O5
I/O6
F
I/O15
NC
A12
A13
WE
I/O7
G
NC
A8
A9
A10
A11
NC
H
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
I/O5
I/O6
I/O7
WE
A15
A14
A13
A12
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A5
A6
A7
OE
BHE
BLE
I/O15
I/O14
I/O13
I/O12
VSS
VCC
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
NC
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
Table 1. Product Portfolio
Power Dissipation
Product
CY62126EV30LL
VCC Range (V)
Range
Industrial
CY62126EV30LL Automotive
Speed
(ns)
Min
Typ[2]
Max
2.2
3.0
3.6
2.2
3.0
3.6
Operating, ICC (mA)
f = 1 MHz
f = fmax
Standby, ISB2 (A)
Typ[2]
Max
Typ[2]
Max
Typ[2]
Max
45
1.3
2
11
16
1
4
55
1.3
4
11
35
1
30
Notes
1. NC pins are not connected on the die.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C.
Document #: 38-05486 Rev. *H
Page 3 of 16
CY62126EV30 MoBL
DC input voltage[3, 4]  0.3 V to 3.6 V (VCCmax + 0.3 V)
Maximum Ratings
Exceeding maximum ratings may shorten the battery life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied ........................................... –55 °C to +125 °C
Supply voltage to ground
potential .............................. –0.3 V to 3.6 V (VCCmax + 0.3 V)
DC voltage applied to outputs
in High Z state[3, 4] .............. –0.3 V to 3.6 V (VCCmax + 0.3 V)
Output current into outputs (LOW) .............................. 20 mA
Static discharge voltage.......................................... > 2001 V
(MIL-STD-883, Method 3015)
Latch up current..................................................... > 200 mA
Operating Range
Device
Range
Ambient
Temperature
VCC[5]
CY62126EV30LL
Industrial
–40 °C to +85 °C
2.2 V to
3.6 V
Automotive –40 °C to +125 °C
Electrical Characteristics
(Over the Operating Range)
Parameter
Description
Test Conditions
45 ns (Industrial)
55 ns (Automotive)
Min
Typ[6]
Max
Min
Typ[6]
Max
–
–
2.0
–
–
–
VOH
Output high voltage
IOH = –0.1 mA
2.0
IOH = –1.0 mA, VCC > 2.70V
2.4
–
–
2.4
VOL
Output low voltage
IOL = 0.1 mA
–
–
0.4
–
IOL = 2.1mA, VCC > 2.70V
–
–
0.4
–
1.8
–
VCC + 0.3
Unit
V
–
V
0.4
V
–
0.4
V
1.8
–
VCC + 0.3
V
VIH
Input high voltage
VCC = 2.2 V to 2.7 V
VCC = 2.7 V to 3.6 V
2.2
–
VCC + 0.3
2.2
–
VCC + 0.3
V
VIL
Input low voltage
VCC = 2.2 V to 2.7 V
–0.3
–
0.6
–0.3
–
0.6
V
VCC = 2.7 V to 3.6 V
–0.3
–
0.8
–0.3
–
0.8
V
–1
–
+1
–4
–
+4
A
IIX
Input leakage current
GND < VI < VCC
IOZ
Output leakage current GND < VO < VCC, Output Disabled
ICC
VCC operating supply
current
f = fmax = 1/tRC
f = 1 MHz
VCC = VCCmax
IOUT = 0 mA
CMOS levels
–
+1
–4
–
+4
A
11
16
–
11
35
mA
–
1.3
2.0
–
1.3
4.0
–1
ISB1
Automatic CE power CE > VCC 0.2 V,
down current —CMOS VIN > VCC – 0.2 V, VIN < 0.2 V)
inputs
f = fmax (Address and Data Only),
f = 0 (OE, BHE, BLE and WE),
VCC = 3.60V
–
1
4
–
1
35
A
ISB2 [7]
Automatic CE power CE > VCC – 0.2 V,
down current —CMOS VIN > VCC – 0.2 V or VIN < 0.2 V,
inputs
f = 0, VCC = 3.60V
–
1
4
–
1
30
A
Notes
3. VIL(min) = –2.0 V for pulse durations less than 20 ns.
4. VIH(max) = VCC+0.75 V for pulse durations less than 20 ns.
5. Full device AC operation assumes a 100 s ramp time from 0 to Vcc(min) and 200 s wait time after Vcc stabilization.
6. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C.
7. Chip enable (CE) needs to be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating.
Document #: 38-05486 Rev. *H
Page 4 of 16
CY62126EV30 MoBL
Capacitance
For all packages. Tested initially and after any design or process changes that may affect these parameters.
Parameter
CIN
COUT
Description
Input capacitance
Output capacitance
Test Conditions
TA = 25 °C, f = 1 MHz, VCC = VCC(typ)
Max
10
10
Unit
pF
pF
Thermal Resistance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
JA
Thermal resistance
(Junction to ambient)
Thermal resistance
(Junction to case)
JC
Test Conditions
Still Air, soldered on a 4.25 × 1.125 inch,
two-layer printed circuit board
VFBGA
Package
58.85
TSOP II
Package
28.2
°C/W
17.01
3.4
°C/W
Unit
Figure 3. AC Test Loads and Waveforms
R1
VCC
OUTPUT
VCC
30 pF
INCLUDING
JIG AND
SCOPE
10%
GND
Rise Time = 1 V/ns
R2
ALL INPUT PULSES
90%
90%
10%
Fall Time = 1 V/ns
Equivalent to: THÉVENIN EQUIVALENT
RTH
OUTPUT
VTH
Parameters
2.2 V - 2.7 V
2.7 V - 3.6 V
Unit
R1
16600
1103

R2
15400
1554

RTH
8000
645

VTH
1.2
1.75
V
Document #: 38-05486 Rev. *H
Page 5 of 16
CY62126EV30 MoBL
Data Retention Characteristics
Over the Operating Range
Parameter
Description
VDR
VCC for data retention
ICCDR[9]
Data retention current
tCDR
[10]
tR[10]
Conditions
Min
Typ[8]
Max
Unit
1.5
–
–
V
Industrial
–
–
3
A
Automotive
–
–
30
A
Chip deselect to data
retention time
0
–
–
ns
Operation recovery time
tRC
–
–
ns
VCC= VDR, CE > VCC – 0.2 V,
VIN > VCC – 0.2 V or VIN < 0.2 V
Figure 4. Data Retention Waveform
DATA RETENTION MODE
VCC
VCC(min)
tCDR
VDR > 1.5 V
VCC(min)
tR
CE
Notes
8. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA = 25 °C.
9. Tested initially and after any design or process changes that may affect these parameters.
10. Full device AC operation requires linear VCC ramp from VDR to VCC(min) > 100 s.
Document #: 38-05486 Rev. *H
Page 6 of 16
CY62126EV30 MoBL
Switching Characteristics
Over the Operating Range [11, 12]
Parameter
45 ns (Industrial)
Description
55 ns (Automotive)
Min
Max
Min
Max
Unit
Read Cycle
tRC
Read cycle time
45
–
55
–
ns
tAA
Address to data valid
–
45
–
55
ns
tOHA
Data hold from address change
10
–
10
–
ns
tACE
CE LOW to data valid
–
45
–
55
ns
tDOE
OE LOW to data valid
–
22
–
25
ns
[13]
5
–
5
–
ns
–
18
–
20
ns
ns
OE LOW to Low Z
tLZOE
OE HIGH to High Z
tHZOE
[13, 14]
[13]
tLZCE
CE LOW to Low Z
10
–
10
–
tHZCE
CE HIGH to High Z [13, 14]
–
18
–
20
ns
tPU
CE LOW to power up
0
–
0
–
ns
tPD
CE HIGH to power down
–
45
–
55
ns
tDBE
BHE / BLE LOW to data valid
–
22
–
25
ns
tLZBE
BHE / BLE LOW to Low Z [13]
5
–
5
–
ns
–
18
–
20
ns
BHE / BLE HIGH to High Z
tHZBE
Write Cycle
[13, 14]
[15]
tWC
Write cycle time
45
–
55
–
ns
tSCE
CE LOW to write end
35
–
40
–
ns
tAW
Address setup to write end
35
–
40
–
ns
tHA
Address hold from write end
0
–
0
–
ns
tSA
Address setup to write start
0
–
0
–
ns
tPWE
WE pulse width
35
–
40
–
ns
tBW
BHE / BLE pulse width
35
–
40
–
ns
tSD
Data setup to write end
25
–
25
–
ns
tHD
Data hold from write end
0
–
0
–
ns
–
18
–
20
ns
10
–
10
–
ns
tHZWE
tLZWE
WE LOW to High Z
[13, 14]
WE HIGH to Low Z
[13]
Notes
11. Test conditions assume signal transition time of 3 ns or less, timing reference levels of VCC(typ)/2, input pulse levels of 0 to VCC(typ), and output loading of the specified
IOL/IOH and 30-pF load capacitance.
12. AC timing parameters are subject to byte enable signals (BHE or BLE) not switching when chip is disabled. See application note AN13842 for further clarification.
13. At any temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any device.
14. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedance state.
15. The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE, BLE or both = VIL. All signals must be active to initiate a write and any of these
signals can terminate a write by going inactive. The data input setup and hold timing must refer to the edge of signal that terminates write.
Document #: 38-05486 Rev. *H
Page 7 of 16
CY62126EV30 MoBL
Switching Waveforms
Figure 5. Read Cycle No. 1(Address transition controlled)[16, 17]
tRC
ADDRESS
tOHA
DATA OUT
tAA
PREVIOUS DATA VALID
DATA VALID
Figure 6. Read Cycle No. 2 (OE controlled)[17, 18]
ADDRESS
tRC
CE
tPD
tHZCE
tACE
OE
tHZOE
tDOE
tLZOE
BHE/BLE
tHZBE
tDBE
tLZBE
DATA OUT
HIGH
IMPEDANCE
HIGHIMPEDANCE
DATA VALID
tLZCE
tPU
VCC
SUPPLY
CURRENT
ICC
50%
50%
ISB
Notes
16. The device is continuously selected. OE, CE = VIL, BHE, BLE, or both = VIL.
17. WE is high for read cycle.
18. Address valid before or similar to CE and BHE, BLE transition LOW.
Document #: 38-05486 Rev. *H
Page 8 of 16
CY62126EV30 MoBL
Switching Waveforms (continued)
Figure 7. Write Cycle No. 1 (WE controlled)[19, 20, 21]
tWC
ADDRESS
tSCE
CE
tAW
tHA
tSA
tPWE
WE
tBW
BHE/BLE
OE
DATA I/O
tSD
NOTE 22
tHD
DATAIN
tHZOE
Figure 8. Write Cycle No. 2 (CE controlled)[19, 20, 21]
tWC
ADDRESS
tSCE
CE
tSA
tAW
tHA
tPWE
WE
tBW
BHE/BLE
OE
tSD
DATA I/O
tHD
DATAIN
NOTE 22
tHZOE
Notes
19. The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE, BLE or both = VIL. All signals must be active to initiate a write and any of
these signals can terminate a write by going inactive. The data input setup and hold timing must refer to the edge of signal that terminates write.
20. Data I/O is high impedance if OE = VIH.
21. If CE goes high simultaneously with WE = VIH, the output remains in a high impedance state.
22. During this period, the I/Os are in output state. Do not apply input signals.
Document #: 38-05486 Rev. *H
Page 9 of 16
CY62126EV30 MoBL
Switching Waveforms (continued)
Figure 9. Write Cycle No. 3 (WE controlled, OE LOW [23]
tWC
ADDRESS
tSCE
CE
tBW
BHE/BLE
tAW
tHA
tSA
tPWE
WE
tSD
DATA I/O
NOTE 24
tHD
DATAIN
tLZWE
tHZWE
Figure 10. Write Cycle No. 4 (BHE/BLE controlled, OE LOW)[23]
tWC
ADDRESS
CE
tSCE
tAW
tHA
tBW
BHE/BLE
tSA
tPWE
WE
tHZWE
DATA I/O
NOTE 24
tSD
tHD
DATAIN
tLZWE
Note
23. If CE goes high simultaneously with WE = VIH, the output remains in a high impedance state.
24. During this period, the I/Os are in output state. Do not apply input signals.
Document #: 38-05486 Rev. *H
Page 10 of 16
CY62126EV30 MoBL
Truth Table
CE[25]
WE
OE
BHE
BLE
H
X
X
X
X
Inputs/Outputs
Mode
Power
High Z
Deselect/power down
Standby (ISB)
L
X
X
H
H
High Z
Output disabled
Active (ICC)
L
H
L
L
L
Data out (I/O0–I/O15)
Read
Active (ICC)
L
H
L
H
L
Data out (I/O0–I/O7);
I/O8–I/O15 in High Z
Read
Active (ICC)
L
H
L
L
H
Data out (I/O8–I/O15);
I/O0–I/O7 in High Z
Read
Active (ICC)
L
H
H
L
L
High Z
Output disabled
Active (ICC)
L
H
H
H
L
High Z
Output disabled
Active (ICC)
L
H
H
L
H
High Z
Output disabled
Active (ICC)
L
L
X
L
L
Data in (I/O0–I/O15)
Write
Active (ICC)
L
L
X
H
L
Data in (I/O0–I/O7);
I/O8–I/O15 in High Z
Write
Active (ICC)
L
L
X
L
H
Data in (I/O8–I/O15);
I/O0–I/O7 in High Z
Write
Active (ICC)
Note
25. Chip enable must be at CMOS levels (not floating). Intermediate voltage levels on this pin is not permitted.
Document #: 38-05486 Rev. *H
Page 11 of 16
CY62126EV30 MoBL
Ordering Information
Speed
(ns)
45
55
Ordering Code
Package
Diagram
Package Type
Operating
Range
CY62126EV30LL-45BVXI
51-85150 48-ball VFBGA (Pb-free)
Industrial
CY62126EV30LL-45ZSXI
51-85087 44-pin TSOP II (Pb-free)
Industrial
CY62126EV30LL-45ZSXA
51-85087 44-pin TSOP II (Pb-free)
Automotive-A
CY62126EV30LL-55BVXE
51-85150 48-ball VFBGA (Pb-free)
Automotive-E
CY62126EV30LL-55ZSXE
51-85087 44-pin TSOP II (Pb-free)
Automotive-E
Contact your local Cypress sales representative for availability of other parts.
Ordering Code Definitions
CY 621 2
6
E V30 LL 45/55 XXX
X
Temperature Grades:
I = Industrial
A = Auto-A
E = Auto-E
Package type:
BVX: VFBGA (Pb-free)
ZSX: TSOP II (Pb-free)
Speed grade
Low Power
Voltage Range = 3 V Typical
E = Process Technology 90 nm
Bus Width = x16
Density = 1 Mbit
621 = MoBL SRAM Family
Company ID: CY = Cypress
Document #: 38-05486 Rev. *H
Page 12 of 16
CY62126EV30 MoBL
Package Diagrams
Figure 11. 48-Ball VFBGA (6 x 8 x 1 mm), 51-85150
51-85150 *F
Document #: 38-05486 Rev. *H
Page 13 of 16
CY62126EV30 MoBL
Figure 12. 44-Pin TSOP II, 51-85087
11.938 (0.470)
11.735 (0.462)
10.262 (0.404)
10.058 (0.396)
PIN 1 I.D.
1
22
Z Z Z
Z X Z
AA
44
23
BOTTOM VIEW
TOP VIEW
0.800 BSC
(0.0315)
0.400(0.016)
0.300 (0.012)
EJECTOR MARK
(OPTIONAL)
CAN BE LOCATED
ANYWHERE IN THE
BOTTOM PKG
BASE PLANE
10.262 (0.404)
10.058 (0.396)
0.10 (.004)
18.517 (0.729)
18.313 (0.721)
0.210 (0.0083)
0.120 (0.0047)
1.194 (0.047)
0.991 (0.039)
0.150 (0.0059)
0.050 (0.0020)
0°-5°
SEATING
PLANE
0.597 (0.0235)
0.406 (0.0160)
DIMENSION IN MM (INCH)
MAX
MIN.
51-85087-*C
Acronyms
Acronym
Description
BHE
byte high enable
BLE
byte low enable
CMOS
complementary metal oxide semiconductor
CE
chip enable
I/O
input/output
OE
output enable
SRAM
static random access memory
TSOP
thin small outline package
VFBGA
very fine ball gird array
WE
write enable
Document #: 38-05486 Rev. *H
Page 14 of 16
CY62126EV30 MoBL
Document History Page
Document Title: CY62126EV30 MoBL®, 1-Mbit (64K x 16) Static RAM
Document Number: 38-05486
Submission
Orig. of
Rev.
ECN No.
Description of Change
Date
Change
**
202760
See ECN
AJU
New data sheet
*A
300835
See ECN
SYT
Converted from Advance Information to Preliminary
Specified Typical standby power in the Features Section
Changed E3 ball from DNU to NC in the Pin Configuration for the FBGA Package
and removed the footnote associated with it on page #2
Changed tOHA from 6 ns to 10 ns for both 35- and 45-ns speed bins, respectively
Changed tDOE, tSD from 15 to 18 ns for 35-ns speed bin
Changed tHZOE, tHZBE, tHZWE from 12 and 15 ns to 15 and 18 ns for the 35- and
45-ns speed bins, respectively
Changed tHZCE from 12 and 15 ns to 18 and 22 ns for the 35- and 45-ns speed
bins, respectively
Changed tSCE,tBW from 25 and 40 ns to 30 and 35 ns for the 35- and 45-ns speed
bins, respectively
Changed tAW from 25 to 30 ns and 40 to 35 ns for 35 and 45-ns speed bins respectively
Changed tDBE from 35 and 45 ns to 18 and 22 ns for the 35 and 45 ns speed bins
respectively
Removed footnote that read “BHE.BLE is the AND of both BHE and BLE. Chip can
be deselected by either disabling the chip enable signals or by disabling both BHE
and BLE” on page # 4
Removed footnote that read “If both BHE and BLE are toggled together, then tLZBE
is 10 ns” on page # 5
Added Pb-free package information
*B
461631
See ECN
NXR
Converted from Preliminary to Final
Removed 35 ns Speed Bin
Removed “L” version of CY62126EV30
Changed ICC (Typ) from 8 mA to 11 mA and ICC (max) from 12 mA to 16 mA for f = fmax
Changed ICC (max) from 1.5 mA to 2.0 mA for f = 1 MHz, ISB1, ISB2 (max) from 1 A
to 4 A, ISB1, ISB2 (Typ) from 0.5 A to 1 A, ICCDR (max) from 1.5 A to 3 A, AC Test
load Capacitance value from 50 pF to 30 pF, tLZOE from 3 to 5 ns, tLZCE from 6 to
10 ns, tHZCE from 22 to 18 ns, tLZBE from 6 to 5 ns, tPWE from 30 to 35 ns, tSD from
22 to 25 ns, tLZWE from 6 to 10 ns, and updated the Ordering Information table.
*C
925501
See ECN
VKN
Added footnote #7 related to ISB2 and ICCDR
Added footnote #11 related AC timing parameters
*D
1045260
See ECN
VKN
Added Automotive information
Updated Ordering Information table
*E
2631771
01/07/09
NXR/PYRS Changed CE condition from X to L in Truth table for Output Disable mode
Updated template
*F
2944332 06/04/2010
VKN
Added Contents
Removed byte enable from footnote #2 in Electrical Characteristics
Added footnote related to chip enable in Truth Table
Updated Package Diagrams
Updated links in Sales, Solutions, and Legal Information
*G
2996166 07/29/2010
AJU
Added CY62126EV30LL-45ZSXA part in Ordering Information.
Added Ordering Code Definitions.
Modified table footnote format.
*H
3113864 12/17/2010
PRAS
Updated Figure 1 and Package Diagram, and fixed Typo in Figure 3..
Document #: 38-05486 Rev. *H
Page 15 of 16
CY62126EV30 MoBL
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
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closest to you, visit us at Cypress Locations.
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cypress.com/go/USB
cypress.com/go/wireless
© Cypress Semiconductor Corporation, 2008-2010. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
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United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
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the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document #: 38-05486 Rev. *H
Revised December 17, 2010
Page 16 of 16
MoBL is a registered trademark, and More Battery Life is a trademark, of Cypress Semiconductor. All products and company names mentioned in this document may be the trademarks of their respective
holders.