Semiconductors MOSFETs MOSFETs for DC-DC Converter MOSFETs for DC

Doc No. TT4-EA-13029
Revision. 3
Product Standards
MOS FET
FK8V03050L
FK8V03050L
Silicon N-channel MOSFET
Unit: mm
For lithium-ion secondary battery protecion circuit
For DC-DC Converter
2.9
0.3
8
7
6
5
1
2
3
4
2.4
2.8
 Features
 Low drain-source On-state Resistance
RDS(on) typ = 16 m (VGS = 4.5 V)
 High-speed switching : Qg = 5.1 nC
 Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
1.
2.
3.
4.
Source
Source
Source
Gate
5.
6.
7.
8.
Panasonic
JEITA
Code
 Absolute Maximum Ratings Ta = 25 C
Parameter
Symbol
Note)
(0.81)
0.65
 Marking Symbol: 3E
Drain-source Voltage
Gate-source Voltage
Drain Current (Steady State) *1
Drain Current (t = 10 s) *1
Drain Current (Pulsed) *1,*2
Source Current (Pulsed)
(Body Diode) *1,*2
Total Power Dissipation (Steady State)
Total Power Dissipation (t = 10 s) *1
Channel Temperature
Operating Ambient Temperature
Storage Temperature Range
0.16
VDS
VGS
ID
IDp
ISp
(BD)
*1
PD
Tch
Topr
Tstg
Rating
Unit
33
20
8
10
32
V
V
Drain
Drain
Drain
Drain
WMini8-F1
SC-115
―
Internal Connection
(D)
8
(D)
7
(D)
6
(D)
5
1
(S)
2
(S)
3
(S)
4
(G)
A
8
1
1.5
150
-40 to +85
-55 to +150
W
C
C
C
*1 Device mounted on a glass-epoxy board (See Figure 1)
*2 Pulse test: Ensure that the channel temperature does not exceed 150C
Pin Name
1.
2.
3.
4.
Source
Source
Source
Gate
5.
6.
7.
8.
Drain
Drain
Drain
Drain
Figure1 FR4 Glass-Epoxy Board
25.4 mm  25.4 mm  0.8 mm
Page 1 of 6
Established : 2011-01-13
Revised
: 2013-08-08
Doc No. TT -E
4 -1
A 3 0 2 9
Revis n.
i o3
Product Standards
MOS FET
FK8V03050L
 Electrical Characteristics Ta = 25C  3C
Static Characteristics
Parameter
Symbol
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-source Leakage Current
Gate-source Threshold Voltage
Drain-source On-state Resistance
Conditions
VDSS
IDSS
IGSS
Vth
*1
ID = 1 mA, VGS = 0 V
VDS = 33 V, VGS = 0 V
VGS = 16 V, VDS = 0 V
ID = 0.73 mA, VDS = 10 V
RDS(on)1 ID = 4A, VGS = 10 V
RDS(on)2 ID = 4A, VGS = 4.5 V
Min
33
Typ
Max
11
16
10
10
2.5
15
25
1
Unit
V
A
A
V
m
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time *2
Rise Time *2
Turn-off Delay Time *2
Fall Time *2
Total Gate Charge
Gate-source Charge
Gate-drain Charge
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS = 10 V, VGS = 0 V,
f = 1 MHz
VDD = 15 V, VGS = 0 to 10 V
ID = 4 A
VDD = 15 V, VGS = 10 to 0 V
ID = 4 A
VDD = 15 V, VGS = 0 to 4.5 V,
ID = 8 A
520
110
70
8
4
32
10
5.1
1.8
2.3
pF
ns
nC
Body Diode Characteristic
Diode Forward Voltage
Note)
*1
VSD
IS = 4 A, VGS = 0 V
0.8
1.2
V
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
2. *1 Pulse test: Ensure that the channel temperature does not exceed 150C
*2 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time
Page 2 of 6
Establ shed
i : 2 0 -01 -111 3
Revised
: 2 0 -01 -083 8
Doc No. TT4-EA-13029
Revision. 3
Product Standards
MOS FET
FK8V03050L
*2 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time
VDD = 15 V
ID = 4 A
Vin
Vout
10V
PW = 10μs
D.C. ≦ 1 %
0V
D
Vin
G
50 
S
90%
Vin
10%
90%
90%
Vout
10%
td(on)
tr
10%
td(off)
tf
Page 3 of 6
Established : 2011-01-13
Revised
: 2013-08-08
Doc No. TT4-EA-13029
Revision. 3
Product Standards
MOS FET
FK8V03050L
Technical Data ( reference )
ID - VDS
ID - VGS
5
10
VGS = 10.0 V
4.5 V
4.0 V
Ta = 85 ℃
4
Drain current ID (A)
Drain current ID (A)
8
3.5 V
6
4
3.0 V
2
3
25 ℃
2
-40 ℃
1
0
0
0
0.1
0.2
0.3
0
1
Drain-source voltage VDS (V)
2
VDS - VGS
5
100
Drain source On-state Resistance
RDS(on) (m)
Drain-source Voltage VDS (V)
4
RDS(on) - ID
0.3
0.25
ID = 8.0 A
0.2
0.15
0.1
4.0 A
0.05
2.0 A
VGS = 4.5 V
10
10.0 V
1
0
0
2
4
6
8
1
10
10
Drain current ID (A)
Gate-source Voltage VGS (V)
Capacitance - VDS
Dynamic Input/Output Characteristics
10000
5
1000
Gate-source Voltage VGS (V)
Capacitance C (pF)
3
Gate-source voltage VGS (V)
Ciss
100
Coss
Crss
VDD = 15 V
4
3
2
1
0
10
0.1
1
10
Drain-source Voltage VDS (V)
100
0
2
4
6
8
Total Gate Charge Qg (nC)
Page 4 of 6
Established : 2011-01-13
Revised
: 2013-08-08
Doc No. TT4-EA-13029
Revision. 3
Product Standards
MOS FET
FK8V03050L
Technical Data ( reference )
RDS(on) - Ta
2.5
30
Drain-source On-resistance
RDS(on) (mΩ)
Gate-source Threshold Voltage Vth (V)
Vth - Ta
2
1.5
1
0.5
VGS = 4.5 V
20
10.0 V
10
0
0
-50
0
50
100
-50
150
0
50
100
150
Temperature (℃)
Temperature (℃)
PD - Ta
Total Power Dissipation PD (W)
1.5
1
0.5
0
0
50
100
150
Temperature Ta (C)
Rth - tsw
Safe Operating Area
1000
10
10
1
1
0.1
0.1
0.01
IDp = 32 A
100
100
IDS(A)
Thermal resistance Rth (C/W)
1000
Operation in this area
is limited by RDS(on)
1 ms
10 ms
100 ms
1s
Ta=25℃, Glass epoxy board
( 25.4 × 25.4 × t0.8mm )
coated with copper foil,
DC
2
which has more than 300mm .
0.1
1
10
Pulse Width tsw (s)
100
1000
0.01
0.01
0.1
1
10
100
VDS(V)
Page 5 of 6
Established : 2011-01-13
Revised
: 2013-08-08
Doc No. TT4-EA-13029
Revision. 3
Product Standards
MOS FET
FK8V03050L
WMini8-F1
Unit : mm
2.9±0.1
+0.10
0.16-0.05
6
5
1
2
3
4
(0.2)
(5°)
7
2.4±0.1
8
2.8±0.1
+0.10
0.30-0.05
0 to 0.02
(5°)
(0.15)
0.80±0.05
0.65
 Land Pattern (Reference) (Unit : mm)
0.65
2.4
0.65 0.65 0.65
0.4
Page 6 of 6
Established : 2011-01-13
Revised
: 2013-08-08
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with
your using the products described in this book for any special application, unless our company agrees to your using the products in
this book for any special application.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20100202