2N2907A

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
2N2907; 2N2907A
PNP switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 30
Philips Semiconductors
Product specification
PNP switching transistors
2N2907; 2N2907A
FEATURES
PINNING
• High current (max. 600 mA)
PIN
• Low voltage (max. 60 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
base
3
collector, connected to case
• Switching and linear amplification.
DESCRIPTION
3
1
handbook, halfpage
2
PNP switching transistor in a TO-18 metal package.
NPN complements: 2N2222 and 2N2222A.
2
3
Fig.1
MAM263
1
Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base
MIN.
−
MAX.
−60
UNIT
V
2N2907
−
−40
V
2N2907A
−
−60
V
−
−600
mA
mW
IC
collector current (DC)
Ptot
total power dissipation
Tamb ≤ 25 °C
−
400
hFE
DC current gain
IC = −150 mA; VCE = −10 V
100
300
fT
transition frequency
IC = −50 mA; VCE = −20 V; f = 100 MHz
200
−
MHz
toff
turn-off time
ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA −
300
ns
1997 May 30
2
Philips Semiconductors
Product specification
PNP switching transistors
2N2907; 2N2907A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
collector-base voltage
open emitter
VCEO
collector-emitter voltage
open base; IC < −100 mA
2N2907
2N2907A
MIN.
MAX.
UNIT
−
−60
V
−
−40
V
−
−60
V
−
−5
V
VEBO
emitter-base voltage
IC
collector current (DC)
−
−600
mA
ICM
peak collector current
−
−800
mA
IBM
peak base current
Ptot
total power dissipation
open collector
−
−200
mA
Tamb ≤ 25 °C
−
400
mW
Tcase ≤ 25 °C
−
1.2
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
200
°C
Tamb
operating ambient temperature
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Rth j-c
thermal resistance from junction to case
1997 May 30
CONDITIONS
in free air
3
VALUE
UNIT
438
K/W
146
K/W
Philips Semiconductors
Product specification
PNP switching transistors
2N2907; 2N2907A
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
MAX.
UNIT
IE = 0; VCB = −50 V
−
−20
nA
IE = 0; VCB = −50 V; Tamb = 150 °C
−
−20
µA
collector cut-off current
2N2907A
IE = 0; VCB = −50 V
−
−10
nA
IE = 0; VCB = −50 V; Tamb = 150 °C
−
−10
µA
−
−50
nA
IC = −0.1 mA
35
−
IC = −1 mA
50
−
IEBO
emitter cut-off current
IC = 0; VEB = −5 V
hFE
DC current gain
VCE = −10 V
2N2907
hFE
MIN.
collector cut-off current
2N2907
ICBO
CONDITIONS
DC current gain
2N2907A
IC = −10 mA
75
−
IC = −150 mA; note 1
100
300
IC = −500 mA; note 1
30
VCE = −10 V
IC = −0.1 mA
75
−
IC = −1 mA
100
−
IC = −10 mA
100
−
IC = −150 mA; note 1
100
300
IC = −500 mA; note 1
50
−
VCEsat
collector-emitter saturation voltage IC = −150 mA; IB = −15 mA; note 1
−400
mV
IC = −500 mA; IB = −50 mA; note 1
−1.6
V
VBEsat
base-emitter saturation voltage
IC = −150 mA; IB = −15 mA; note 1
−1.3
V
IC = −500 mA; IB = −50 mA; note 1
−2.6
V
Cc
collector capacitance
IE = ie = 0; VCB = −10 V; f = 1 MHz
−
8
pF
Ce
emitter capacitance
IC = ic = 0; VEB = −2 V; f = 1 MHz
−
30
pF
fT
transition frequency
IC = −50 mA; VCE = −20 V; f = 100 MHz;
note 1
200
−
MHz
ICon = −150 mA; IBon = −15 mA; IBoff = 15 mA −
45
ns
Switching times (between 10% and 90% levels); see Fig.2
ton
turn-on time
td
delay time
−
15
ns
tr
rise time
−
35
ns
toff
turn-off time
−
300
ns
ts
storage time
−
250
ns
tf
fall time
−
50
ns
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
1997 May 30
4
Philips Semiconductors
Product specification
PNP switching transistors
2N2907; 2N2907A
VBB
handbook, full pagewidth
RB
VCC
RC
Vo
(probe)
oscilloscope
450 Ω
(probe)
450 Ω
R2
Vi
DUT
R1
MGD624
Vi = −9.5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 68 Ω; R2 = 325 Ω; RB = 325 Ω; RC = 160 Ω.
VBB = 3.5 V; VCC = −29.5 V.
Oscilloscope input impedance Zi = 50 Ω.
Fig.2 Test circuit for switching times.
1997 May 30
5
oscilloscope
Philips Semiconductors
Product specification
PNP switching transistors
2N2907; 2N2907A
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT18/13
α
j
seating plane
B
w M A M B M
1
b
k
D1
2
3
a
D
A
A
0
5
L
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
a
b
D
D1
j
k
L
w
α
mm
5.31
4.74
2.54
0.47
0.41
5.45
5.30
4.70
4.55
1.03
0.94
1.1
0.9
15.0
12.7
0.40
45°
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT18/13
B11/C7 type 3
TO-18
1997 May 30
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-18
6
Philips Semiconductors
Product specification
PNP switching transistors
2N2907; 2N2907A
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 May 30
7
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© Philips Electronics N.V. 1997
SCA54
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117047/00/02/pp8
Date of release: 1997 May 30
Document order number:
9397 750 02224