http://www.fujielectric.co.jp/products/semiconductor/index.html
FMY68N60S1A
Automotive
Super J-MOSTM series
■Features
FUJI POWER MOSFET
N-Channel enhancement mode power MOSFET
■Outline Drawings [mm]
■Equivalent circuit schematic
Low on-state resistance
Low switching loss
Easy to use
(more controllable switching dV/dt by Rg)
The reliability trial conforms to AEC Q101.
100% avalanche tested
Drain (D)
Gate (G)
■Applications
Source (S)
Automotive switching applications
■Absolute Maximum Ratings at Tc=25℃(unless otherwise specified)
Description
Symbol
Characteristics
Unit
VDS
600
V
VDSX
600
V
VGS=-30V
Continuous Drain Current
ID
±68
A
Tc=25℃ Note*1
Pulsed Drain Current
IDP
±204
A
30
V
Gate-Source Voltage
VGS
±30
V
AC
Drain-Source Voltage
Remarks
Non-Repetitive Maximum Avalanche current
IAS
13.5
A
Note*2
Non-Repetitive Maximum Avalanche Energy
EAS
3194.4
mJ
Note*3
Peak Diode Recovery dV/dt
dV/dt
15
kV/μs
Note*4
Peak Diode Recovery di/dt
-di/dt
50
A/μs
Note*5
Maximum Power Dissipation
PD
545
W
Tch
150
℃
Tstg
-55 to +150
℃
Operating and Storage Temperature range
Tc=25℃
Note*1 : Limited by maximum channel temperature
Note*2 : Tch≦150℃,See Fig.1 and Fig.2
Note*3 : Starting Tch=25℃,IAS=11A,L=19.3mH,VDD=60V,RG=50Ω,See Fig.1 and Fig.2
EAS limied by maximum channel temperature and avalanche current.
Note*4 : IF≦-34A,-di/dt=50A/μs,VDD≦300V, Tch≦150℃
Note*5 : IF≦-34A,dV/dt=15kV/μs,VDD≦300V, Tch≦150℃
■Electrical Characteristics at Tc=25℃(unless otherwise specified)
Static Ratings
Description
Symbol
Conditions
Min.
Typ.
Max.
Unit
Drain-Source Breakdown Voltage
BVDSS
ID=250μA
VGS=0V
600
-
-
V
Gate Threshold Voltage
VGS(th)
ID=250μA
VDS= VGS
2.5
3.0
3.5
V
-
2
10
Zero Gate Voltage Drain current
IDSS
VDS= 600V
VGS=0V
Ta=25℃
VDS= 480V
VGS=0V
Ta=150℃
μA
-
1
10
Gate-Source Leakage current
IGSS
VGS=±30V
VDS= 0V
-
10
100
nA
Drain-Source On-State Resistance
RDS(on)
ID=34A
VGS=10V
-
0.034
0.040
Ω
Aug. 2014
FMY68N60S1A
Automotive
FUJI POWER MOSFET
http://www.fujielectric.co.jp/products/semiconductor/index.html
Dynamic Ratings
Description
Symbol
Conditions
Min.
Typ.
Max.
Unit
Forward Transconductance
gfS
ID=34A
VDS=10V
27.5
-
-
S
Input Capacitance
CiSS
-
7000
-
Output Capacitance
CoSS
-
14500
-
Reverse Transfer Capacitance
CrSS
-
1300
-
-
40
-
-
107
-
-
199
-
-
20
-
-
203
-
-
44
-
-
76
-
Turn-On Time
td(on)
tr
Turn-Off Time
VDS=10V
VGS=0V
f=1MHz
td(off)
VDD=400V, VGS=10V
ID=34A, RG=6.2Ω
See Fig.3 and Fig.4
tf
Total Gate Charge
QG
Gate-Source Charge
QGS
Gate-Drain Charge
QGD
VDD=400V, ID=68A
VGS=10V
See Fig.5
pF
ns
nC
Note*6 : Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% BVDSS.
Note*7 : Co(tr) is a fixed capacitance that gives the same charging times as Coss while VDS is rising from 0 to 80% BVDSS.
Reverse Ratings
Description
Symbol
Conditions
Min.
Typ.
Max.
Unit
Avalanche Capability
IAV
L=19.3mH, Tch=25℃
See Fig.1 and Fig.2
13.5
-
-
A
Diode Forward On- Voltage
VSD
IF=68A, VGS=0V
Tch=25℃
-
1.0
1.35
V
Reverse Recovery Time
trr
-
600
-
ns
Reverse Recovery Charge
Qrr
-
8.7
-
μC
IF=34A, VGS=0V
VDD=300V
-di/dt=50A/μs
See Fig.6
■Thermal Characteristics
Description
Symbol
Min.
Typ.
Max.
Unit
Cannel to Case
Rth(ch-c)
-
-
0.23
℃/W
Cannel to Ambient
Rth(ch-a)
-
-
50
℃/W
2
FMY68N60S1A
Automotive
FUJI POWER MOSFET
http://www.fujielectric.co.jp/products/semiconductor/index.html
Allowable Power Dissipation
PD=f(Tc)
600
500
PD [W]
400
300
200
100
0
0
25
50
75
Tc [℃]
100
125
150
Typical Output Characteristics
Typical Output Characteristics
ID=f(VDS):80 us pulse test,Tch=25℃
250
ID=f(VDS):80 us pulse test,Tch=150℃
150
20V
200
8V
10V
10V
8V
20V
7V
6V
100
5.5V
ID[A]
ID[A]
150
6V
5V
100
50
5.5V
VGS=4.5V
50
5V
VGS=4.5V
0
0
0
5
10
15
VDS[V]
20
0
25
5
RDS(on)=f(ID):80 us pulse test.Tch=25℃
5V
25
4.5V
5V
5.5V
6V
7V
0.08
0.15
8V
RDS(on) [Ω]
8V
0.06
RDS(on) [Ω]
20
RDS(on)=f(ID):80 us pulse test.Tch=150℃
0.20
6V
5.5V
15
VDS[V]
Typical Drain-Source on-state Resistance
Typical Drain-Source on-state Resistance
0.10
10
10V
0.04
VGS=20V
0.10
10V
VGS=20V
0.05
0.02
0.00
0.00
0
50
100
ID[A]
150
200
0
250
50
100
ID[A]
3
150
FMY68N60S1A
Automotive
FUJI POWER MOSFET
http://www.fujielectric.co.jp/products/semiconductor/index.html
Drain-Source On-state Resistance
Gate Thres hold Voltage vs. Tch
RDS(on)=f(Tch):ID=34A,VGS=10V
6
VGS(th)=f(Tch):VDS=VGS, ID=250μA
5
0.10
VGS(th) [V]
RDS(on)[Ω]
4
max.
0.05
3
typ.
min.
2
1
0
0.00
-50
-25
0
25
50
75
Tch[℃]
100
125
-50
150
0
25
50
75
100
125
150
Tch [℃]
Tyipical Transfer Characteristics
Tyipical Trans conductance
ID=f(VGS):80 us pulse test. VDS=25V
gfs=f(VGS):80 us pulse test. VDS=25V
100
100
150℃
10
ID [A]
-25
Tch=25℃
10
Tch=25℃
150℃
gfs [S]
1
0.1
1
0.01
0.001
0
2
4
6
VGS[V]
8
10
0.1
0.1
Tyipical Forward Characteristics of Reverce Diode
10
Tyipical Capacitance
IF=f(VSD):80 us pulse test
105
100
100
ID[A]
C=f(VDS):VGS=0V.f=250kHz
104
C iss
150℃
10
103
Tch=25℃
C [pF]
IF [A]
1
C oss
102
101
1
C rss
100
0.1
0.0
0.5
1.0
VSD[V]
1.5
10-1
2.0
4
10-2
10-1
100
VDS[V]
101
102
FMY68N60S1A
Automotive
FUJI POWER MOSFET
http://www.fujielectric.co.jp/products/semiconductor/index.html
Tyipical Switching Characteristics vs.ID Tch=25℃
Typical Cross stored energy
C=f(ID):Vdd=400V, VGS=10V/0V, RG=6.2Ω,L=500uH
1000
50
td(on)
td(off)
100
30
t [ns]
Eoss [uJ]
40
tr
tf
20
10
10
1
0
0
100
200
300
VDS[V]
400
500
1
600
100
E(AV)=f(starting Tch) :Vcc=60V,I(AV)<=13.5A
5000
VDS=120 V
8
ID[A]
Maximum Avaranche Current vs. starting Tch
Typical Gate Characteristics
VGS=f(Qg): ID=68A, Tch=25℃
10
10
IAS=6A
4000
300 V
480 V
4
2
2000
IAS=13.5A
1000
0
0
100
150
Qg[nC]
Maximum Avaranche Current vs. starting Tch
I(AV)=f(starting Tch), single pulse
50
0
200
0
14
12
10
IAV [A]
IAS=9A
3000
EAV [mJ]
VGS[V]
6
8
6
4
2
0
0
25
50
75
100
starting Tch [℃]
125
150
5
25
50
75
100
starting Tch [℃]
125
150
FMY68N60S1A
Automotive
FUJI POWER MOSFET
http://www.fujielectric.co.jp/products/semiconductor/index.html
+10V
VGS
L
-15V
BVDSS
IAV
Rg
VDS
0
Fig.1 Avalanche Test circuit
Diode
ID
Fig.2 Operating waveforms of Avalanche Test
L
VDD
DUT
(MOSFET)
Rg
PG
Fig.3 Switching Test circuit
VDS
VGS
VDS ×90%
VDS ×90%
VGS ×90%
VDS ×10%
VGS ×10%
td(on)
VDS ×10%
tr
td(off)
tf
Fig.4 Operating waveform of Switching Test
VGS,VDS
IF
VDS
VGS
QG
trr
10V
QSW
IRP×10%
QGS
QGD
IRP
Qg
trr
Qrr=∫ ir・dt
0
Fig.6 Operating waveform of
Body diode Recovery Test
Fig.5 Operating waveform of Gate charge Test
6
FMY68N60S1A
Automotive
FUJI POWER MOSFET
http://www.fujielectric.co.jp/products/semiconductor/index.html
WARNING
1.This Data Sheet contains the product specifications, characteristics, data, materials, and structures as of Aug2014.
The contents are subject to change without notice changes or other reasons.
When using a product listed in this Data Sheet, be sure to obtain the latest specifications.
2.All applications described in this Data Sheet exemplify the use of Fuji’s products for reference only.
No right or license, either express or implied, under any patent, trade secret or other intellectual property right
owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted.
Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement
or alleged infringement of other’s intellectual property rights which may arise from the use of the applications
described herein.
3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor
products may become faulty.
When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety
measures to prevent design failsafe, flame retardant, and free of malfunction.
4.The produced introduced in this Data Sheet are intended for use in the following electronic and electrical
equipment which has normal reliability requirements.
・Automotive
・ Computers
・ OA equipment
・ Communications equipment (Terminal devices)
・ Machine tools ・ AV equipment ・ Measurement equipment ・ Personal equipment
・Electrical home appliances
・ Industrial robots
etc.
5.If you need to use a product in this Data Sheet for enquiring higher reliability than normal, such as for the
equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval.
When using these products for such equipment, take adequate measures such as a backup system to prevent the
equipment from malfunctioning even if a Fuji’s product incorporated in equipment becomes faulty.
・ Backbone network equipment
・ Transportation equipment (automobiles, trains, ships, etc.)
・ Traffic-signal control equipment
・ Gas alarms, leakage gas auto breakers
・ Medical equipment
・ Burglar alarms, fire alarms, emergency equipment etc.
6.Do not use products in this Data Sheet for the equipment requiring strict reliability such as the following and
equivalents strategic equipment (without limitation).
・ Aerospace equipment
・ Aeronautical equipment
・ Nuclear control equipment
・ Submarine repeater equipment
7. As for a part of this Data Sheet or all the reprint reproductions, the approval of Fuji Electric Co., Ltd. by the
document is necessary.
8.If you have any question about any portion in this Data Sheet , ask Fuji Electric Co., Ltd. or its sales agents before
using the product.
Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in
accordance with instructions set forth herein.
7