Preliminary Datasheet
BCR3FM-14LB
R07DS0963EJ0001
Rev.0.01
Nov 28, 2012
700V - 3A - Triac
Medium Power Use
Features




 Insulated Type
 Planar Passivation Type
 Viso: 2000 V
IT (RMS) : 3 A
VDRM : 800 V (Tj =125 °C)
Tj: 150 °C
IFGTI, IRGTI, IRGT: 30 mA
Outline
RENESAS Package code: PRSS0003AG-A
(Package name: TO-220FP)
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2 3
Applications
240-V AC electric equipment, washing machine, vacuum cleaner, garbage disposer, solenoid driver, small motor
control, and other general purpose control applications
Maximum Ratings
Parameter
Symbol
Repetitive peak off-state voltageNote1
VDRM
Non-repetitive peak off-state voltageNote1
VDSM
R07DS0963EJ0001 Rev.0.01
Nov 28, 2012
Voltage class
14
800
700
840
Unit
V
Conditions
Tj = 125C
Tj = 150C
V
Page 1 of 3
BCR3FM-14LB
Preliminary
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
3
Unit
A
Surge on-state current
ITSM
30
A
I2 t
3.7
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
3
0.3
6
0.5
–40 to +150
–40 to +150
1.9
2000
W
W
V
A
C
C
g
V
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage Note5
Conditions
Commercial frequency, sine full wave
360 conduction, Tc = 133C
60 Hz sinewave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute
T1  T2  G terminal to case
Electrical Characteristics
Parameter
Repetitive peak off-state current
Symbol
IDRM
Min.
—
Typ.
—
Max.
2.0
Unit
mA
VTM
—
—
1.6
V
Tc = 25C, ITM = 4.5A,
instantaneous measurement
On-state voltage
Test conditions
Tj = 150C, VDRM applied
Gate trigger voltageNote2



VFGT
VRGT
VRGT
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
Gate trigger curentNote2



IFGT
IRGT
IRGT
—
—
—
—
—
—
30
30
30
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
VGD
0.2
0.1
—
5
1
—
—
—
—
—
—
—
4.0
—
—
V
V
C/W
V/s
V/s
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltageNote4
Notes: 1.
2.
3.
4.
5.
Rth (j-c)
(dv/dt)c
Tj = 125C, VD = 1/2 VDRM
Tj = 150C, VD = 1/2 VDRM
Junction to caseNote3
Tj = 125C
Tj = 150C
Gate open.
Measurement using the gate trigger characteristics measurement circuit.
The contact thermal resistance Rth (c-f) in case of greasing is 0.5C /W.
Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Test conditions
1. Junction temperature
Tj = 125/150C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.5A/ms
3. Peak off-state voltage
VD = 400 V
R07DS0963EJ0001 Rev.0.01
Nov 28, 2012
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 3
BCR3FM-14LB
Preliminary
Package Dimensions
Package Name
TO-220FP
JEITA Package Code

RENESAS Code
PRSS0003AG-A
Previous Code

MASS[Typ.]
1.9g
Unit: mm
10.16 ± 0.20
2.54 ± 0.20
6.68 ± 0.20
3.3 ± 0.2
1.28 ± 0.30
3.18 ± 0.20
12.98 ± 0.30
15.87 ± 0.20
3.18 ± 0.10
Max 1.47
2.76 ± 0.20
0.80 ± 0.20
0.50
4.7 ± 0.2
5.08 ± 0.20
Ordering Information
Orderable Part Number
BCR3FM-14LB#BB0
BCR3FM-14LB-A8#BB0
Note:
Packing
Tube
Tube
Quantity
50 pcs.
50 pcs.
Remark
Straight type
A8 Lead form
Please confirm the specification about the shipping in detail.
R07DS0963EJ0001 Rev.0.01
Nov 28, 2012
Page 3 of 3
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