datasheet for 2N3019HR by STMicroelectronics

2N3019HR
Hi-Rel NPN bipolar transistor 80 V - 1 A
Features
BVCEO
80 V
IC (max)
1A
HFE at 10 V - 150 mA
> 100
Operating temperature range
-65°C to +200°C
■
Hi-Rel NPN bipolar transistor
■
Linear gain characteristics
■
ESCC qualified
■
European preferred part list - EPPL
■
Radiation level: lot specific total dose contact
marketing for specified level
TO-39
Figure 1.
Internal schematic diagram
Description
The 2N3019AHR is a silicon planar epitaxial NPN
transistors in TO-39 package. It is specifically
designed for aerospace Hi-Rel applications and
ESCC qualified according to the 5201-011
specification. In case of conflict between this
datasheet and ESCC detailed specification, the
latter prevails.
Table 1.
Device summary
Order codes
Package
Lead finish
Marking
Type
EPPL
Packaging
2N3019HR
TO-39
Gold
Solder Dip
520101103
520101104
ESCC Flight
Yes
Strip pack
January 2010
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Electrical ratings
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCBO
Collector-base voltage (IE = 0)
140
V
VCEO
Collector-emitter voltage (IB = 0)
80
V
VEBO
Emitter-base voltage (IC = 0)
7
V
Collector current
1
A
0.8
5
W
W
-65 to 200
°C
200
°C
Value
Unit
35
218
°C/W
°C/W
IC
PTOT
Total dissipation at Tamb ≤ 25 °C
Total dissipation at Tc ≤ 25 °C
TSTG
Storage temperature
TJ
Table 3.
Symbol
RthJC
RthJA
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2N3019HR
Max. operating junction temperature
Thermal data
Parameter
Thermal resistance junction-case
__
__
Thermal resistance junction-ambient
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max
max
2N3019HR
2
Electrical characteristics
Electrical characteristics
Tcase = 25 °C unless otherwise specified
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
VCB = 90 V
VCB = 90 V
ICES
Collector cut-off
current (IE = 0)
IEBO
Emitter cut-off current
VEB = 5 V
(IC = 0)
Min.
Tamb = 150 °C
Typ.
Max.
Unit
10
10
nA
µA
10
nA
Collector-base
breakdown voltage
(IE = 0)
IC = 100 µA
140
V
Collector-emitter
V(BR)CEO (1) breakdown voltage
(IB = 0)
IC = 30 mA
80
V
V(BR)EBO
Emitter-base
breakdown voltage
(IC = 0)
IE = 100 µA
7
V
VCE(sat) (1)
Collector-emitter
saturation voltage
IC = 150 mA
IC = 500 mA
IB = 15 mA
IB = 50 mA
0.2
0.5
V
V
VBE(sat) (1)
Base-emitter
saturation voltage
IC = 150 mA
IB = 15 mA
1.1
V
DC current gain
IC = 0.1 mA
IC = 10 mA
IC = 150 mA
IC = 500 mA
IC = 1 A
IC = 150 mA
Tamb = -65 °C
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
V(BR)CBO
hFE (1)
VCE = 10 V
f = 20 MHz
50
90
100
50
15
200
300
200
40
IC = 50 mA
hfe
Small signal current
gain
hfe
Small signal short
circuit forward current VCE = 5 V
transfer ratio
IC = 1 mA
CCBO
Output capacitance
(IE = 0)
VCB = 10 V
f = 1 MHz
12
pF
CIBO
Input capacitance
(IC = 0)
VEB = 0.5 V
f = 1 MHz
60
pF
Noise figure
VCE = 10 V
IC = 100 µA
RG = 1 kΩ Bandwidth = 200 Hz
4
dB
tC(CB)
Collector- base
constant time
VCE = 10 V
f = 79.8 MHz
400
ps
ton + toff
Pulse response
VCC = 20 V
30
ns
NF
IC = 10 mA
see Figure 4
5
20
80
400
1. Pulsed duration = 300 µs, duty cycle ≤ 2 %
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Electrical characteristics
2.1
2N3019HR
Test circuits
Figure 2.
Resistive load switching test circuit
1. Fast electronic switch
2. Non-inductive resistor
Figure 3.
Circuit for electrical measurement
Figure 4.
Input waveform at point “A”
1. tr ≤ 2 ns, duty cycle ≤ 2 %, ZIN = 50 Ω
2. Sampling oscilloscope: ZIN ≥ 100 kΩ, CIN ≤ 12 pF, tr ≤ 5 ns
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2N3019HR
3
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
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Revision history
4
2N3019HR
Revision history
Table 5.
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Document revision history
Date
Revision
Changes
09-Feb-2009
1
Initial release
07-Jan-2010
2
Modified Table 1 on page 1
Doc ID 15384 Rev 2
2N3019HR
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