IRF7425PbF-1
HEXFET® Power MOSFET
VDS
-20
RDS(on) max
V
1
8
S
2
7
D
S
3
6
D
G
4
5
D
8.2
(@VGS = -4.5V)
mΩ
RDS(on) max
13
(@VGS = -2.5V)
Qg (typical)
ID
(@TA = 25°C)
87
nC
-15
A
Package Type
IRF7425PbF-1
SO-8
SO-8
Top View
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Base Part Number
A
D
S
⇒
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7425PbF-1
IRF7425TRPbF-1
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-20
-15
-12
-60
2.5
1.6
20
± 12
-55 to + 150
V
mW/°C
V
°C
Max.
Units
50
°C/W
A
W
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambientƒ
1
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IRF7425PbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ΔV(BR)DSS/ΔTJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
-20
–––
–––
–––
-0.45
44
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Typ.
–––
0.010
–––
–––
–––
–––
–––
–––
–––
–––
87
18
21
13
20
230
160
7980
1480
980
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250μA
––– V/°C Reference to 25°C, ID = -1mA
8.2
VGS = -4.5V, ID = -15A ‚
mΩ
13
VGS = -2.5V, ID = -13A ‚
-1.2
V
VDS = VGS, ID = -250μA
–––
S
VDS = -10V, ID = -15A
-1.0
VDS = -16V, VGS = 0V
µA
-25
VDS = -16V, VGS = 0V, TJ = 70°C
-100
VGS = -12V
nA
100
VGS = 12V
130
ID = -15A
27
nC
VDS = -10V
32
VGS = -4.5V
–––
VDD = -10V ‚
–––
ID = -1.0A
ns
–––
RG = 6.0Ω
–––
VGS = -4.5V
–––
VGS = 0V
–––
pF
VDS = -15V
–––
ƒ = 1.0kHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
-2.5
–––
–––
-60
–––
–––
–––
–––
120
160
-1.2
180
240
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -2.5A, VGS = 0V
TJ = 25°C, IF = -2.5A
di/dt = -100A/μs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
ƒ Surface mounted on 1 in square Cu board, t ≤ 10sec.
‚ Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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IRF7425PbF-1
1000
1000
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
100
100
10
1
-1.0V
0.1
20μs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
10
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
TJ = 150 ° C
10
TJ = 25 ° C
V DS = -15V
20μs PULSE WIDTH
1.6
1.8
2.0
2.2
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
10
100
Fig 2. Typical Output Characteristics
2.0
1.4
1
-VDS , Drain-to-Source Voltage (V)
100
1.2
20μs PULSE WIDTH
TJ = 150 °C
0.1
0.1
100
Fig 1. Typical Output Characteristics
0.1
1.0
-1.0V
1
-VDS , Drain-to-Source Voltage (V)
1
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
BOTTOM -1.0V
TOP
TOP
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ID = -15A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRF7425PbF-1
12000
-VGS , Gate-to-Source Voltage (V)
10000
C, Capacitance (pF)
8
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
8000
6000
4000
Coss
Crss
2000
0
1
10
4
2
0
40
80
120
160
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-IID , Drain Current (A)
-ISD , Reverse Drain Current (A)
VDS =-16V
VDS =-10V
6
0
100
ID = -15A
10
100
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.2
V GS = 0 V
0.4
0.6
0.8
1.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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100us
1ms
10
10ms
TA = 25 °C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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November 20, 2013
100
IRF7425PbF-1
15
RD
VDS
VGS
12
D.U.T.
-ID , Drain Current (A)
RG
-
+
9
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
3
td(on)
tr
t d(off)
tf
VGS
0
25
50
75
100
125
10%
150
TC , Case Temperature ( °C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
P DM
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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0.015
RDS (on) , Drain-to-Source On Resistance ( Ω)
RDS(on) , Drain-to -Source On Resistance (Ω)
IRF7425PbF-1
0.010
ID = -15A
0.005
1.0
2.0
3.0
4.0
5.0
0.010
0.009
VGS = -2.5V
0.008
0.007
0.006
VGS = -4.5V
0.005
0
10
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs.
Gate Voltage
20
30
40
50
-I D , Drain Current (A)
Fig 13. Typical On-Resistance Vs.
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
12V
.2μF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
IG
Charge
Fig 14a. Basic Gate Charge Waveform
6
.3μF
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ID
Current Sampling Resistors
Fig 14b. Gate Charge Test Circuit
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November 20, 2013
60
IRF7425PbF-1
3.0
120
2.5
80
Power (W)
-VGS(th) , Variace ( V )
100
ID = -250μA
2.0
60
40
20
1.5
0
-75
-50
-25
0
25
50
75
100
125
150
0.001
0.010
T J , Temperature ( °C )
Fig 15. Typical Vgs(th) Variance Vs.
Juction Temperature
7
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0.100
1.000
10.000
100.000
Time (sec)
Fig 16. Typical Power Vs. Time
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November 20, 2013
IRF7425PbF-1
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
5
A
8
6
7
6
5
H
1
2
3
0.25 [.010]
4
A
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
e
e1
8X b
0.25 [.010]
MAX
0.25
.0098
0.10
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
.025 BASIC
0.635 BASIC
e1
6X
MILLIMETERS
MIN
A
E
INCHES
DIM
B
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
A
C
y
0.10 [.004]
A1
8X L
8X c
7
C A B
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INT ERNAT IONAL
RECT IFIER
LOGO
XXXX
F7101
DAT E CODE (YWW)
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAS T DIGIT OF T HE YEAR
WW = WEEK
A = AS S EMBLY S IT E CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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November 20, 2013
IRF7425PbF-1
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
†
Qualification information
Industrial
Qualification level
(per JEDE C JE S D47F
Moisture Sensitivity Level
SO-8
RoHS compliant
††
guidelines)
MS L1
††
(per JEDE C J-S T D-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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November 20, 2013