HFB50HI20 Ultrafast, Soft Recovery Diode FRED Features

PD - 94324A
HFB50HI20
Ultrafast, Soft Recovery Diode
FRED
Features
•
•
•
•
VR = 200V
Reduced RFI and EMI
Reduced Snubbing
Extensive Characterization of Recovery Parameters
Hermetic
IF(AV) = 50A
trr = 35ns
Description
These Ultrafast, soft recovery diodes are optimized to reduce losses and EMI/RFI in high frequency power
conditioning systems. An extensive characterization of the recovery behavior for different values of current,
temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors
drives and other applications where switching losses are significant portion of the total losses.
Absolute Maximum Ratings
Parameter
VR
IF(AV)
IFSM
PD @ TC = 25°C
TJ, TSTG
Cathode to Anode Voltage
Continuous Forward Current,  TC = 87°C
Single Pulse Forward Current, ‚ TC = 25°C
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Max.
Units
200
50
450
167
-55 to +150
V
A
W
°C
Note:  D.C. = 50% rect. wave
‚ 1/2 sine wave, 60 Hz , P.W. = 8.33 ms
CASE STYLE
(ISOLATED BASE)
CATHODE
ANODE
ANODE
TO-259AA
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02/20/06
HFB50HI20
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
VBR
Cathode Anode Breakdown Voltage
VF
Min. Typ. Max. Units
V
Test Conditions
200
—
—
IR = 100µA
Forward Voltage
—
—
1.34
See Fig. 1 ƒ
—
—
1.28
—
—
1.7
IF = 100A, TJ = 25°C „
—
—
1.69
IF = 100A, T J = 125°C „
IF = 50A, TJ = -55°C „
V
IF = 50A, TJ = 25°C „
See Fig. 2
IR
Reverse Leakage Current
See Fig. 2 ƒ
—
—
—
—
10
100
µA
µA
VR = VR Rated
VR = V R Rated, TJ = 125°C
CT
Junction Capacitance, See Fig. 3
—
—
330
pF
V R = 200V
LS
Series Inductance
—
8.7
—
nH
Measured from anode lead to cathode
lead, 6 mm ( 0.025 in ) from package
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
trr
trr1
trr2
IRRM1
IRRM2
Q rr1
Q rr2
di(rec)M/dt1
di(rec)M/dt2
Min.
Reverse Recovery Time
Reverse Recovery Time
Peak Recovery Current
Reverse Recovery Charge
Peak Rate of Fall of Recovery Current
During tb
—
—
—
—
—
—
—
—
—
Typ. Max. Units
—
42
69
4.4
8.7
108
314
390
570
35
—
—
—
—
—
—
—
—
Test Conditions
ns
ns
IF = 0.5A,VR
TJ = 25°C
TJ = 125°C
TJ = 25°C
A
A
TJ = 125°C
TJ = 25°C
nC
nC
TJ = 125°C
TJ = 25°C
A/µs
A/µs TJ = 125°C
= 30V, dif/dt = 300A/µs
See Fig.
5
IF = 50A
See Fig.
6
VR = 160V
See Fig.
7
dif/dt = 200A/µs
See Fig.
8
Thermal - Mechanical Characteristics
Parameter
RthJC
Wt
Junction-to-Case
Weight
Typ.
Max.
Units
—
10.9
0.75
—
°C/W
g
Note:
ƒ Pulse Width < 300µs, Duty Cycle < 2%
„ Pins 2 and 3 externally tied together
2
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HFB50HI20
100
100
125°C
Reverse Current - I R (µA)
75°C
1
0.1
25°C
0.01
0.001
0
40
80
120
160
200
Reverse Voltage - V R (V)
10
Fig. 2 - Typical Reverse Current Vs. Reverse
Voltage
10000
Tj = 125°C
Junction Capacitance - C T (pF)
Instantaneous Forward Current - I F (A)
100°C
10
Tj = 25°C
Tj = -55°C
T J = 25°C
1000
1
0.0
0.4
0.8
1.2
1.6
100
2.0
0
Forward Voltage Drop - V F (V)
40
80
120
160
200
Reverse Voltage - VR (V)
Fig. 1 - Maximum Forward Voltage Drop Vs.
Instantaneous Forward Current
Fig. 3 - Typical Junction Capacitance Vs.
Reverse Voltage
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
t1
t2
0.02
0.01
0.01
0.00001
PDM
0.05
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
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HFB50HI20
100
100
VR = 160V
IF = 100A
TJ = 125°C
TJ = 25°C
60
IF = 50A
IRRM - ( A )
trr - ( ns )
80
IF = 25A
IF = 50A
IF = 100A
IF = 25A
10
VR = 160V
40
TJ = 125°C
TJ = 25°C
20
1
100
1000
100
1000
dif / dt - ( A / µs )
dif / dt - ( A / µs )
Fig. 5 - Typical Reverse Recovery Vs. dif/dt,
1000
10000
IF = 100A
IF = 25A
IF = 50A
di ( rec )M / dt - ( A / µs )
Qrr - ( nC )
IF = 25A
Fig. 6 - Typical Recovery Current Vs. dif/dt,
100
VR = 160V
IF = 50A
IF = 100A
1000
VR = 160V
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
10
100
100
1000
dif / dt - ( A / µs )
Fig. 7 - Typical Stored Charge Vs. dif/dt
4
100
1000
dif / dt - ( A / µs )
Fig. 8 - Typical di(rec)M/dt Vs. dif/dt
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HFB50HI20
3
trr
IF
REVERSE RECOVERY CIRCUIT
tb
ta
0
Q rr
VR = 200V
2
I RRM
4
0.5 I RRM
di(rec)M/dt
0.01 Ω
0.75 I RRM
L = 70µH
1
D.U.T.
dif/dt
ADJUST
D
G
5
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
di f /dt
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 I RRM
extrapolated to zero current
4. Qrr - Area under curve defined by trr
and IRRM
trr X IRRM
Qrr =
2
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Case Outline and Dimensions — TO-259AA
3,1$66,*10(176
1 = CATHODE
2 = ANODE
3 = ANODE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
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Data and specifications subject to change without notice. 02/2006
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