datasheet for AP2302GN-HF-3TR by Advanced Power Electronics Corp. USA

Advanced Power
Electronics Corp.
AP2302GN-HF-3
N-channel Enhancement-mode Power MOSFET
Capable of 2.5V Gate Drive
D
BV DSS
Low On-Resistance
20V
R DS(ON)
Surface Mount Device
G
RoHS-compliant, halogen-free
85mΩ
ID
3.2A
S
Description
D
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
S
The AP2302GN-HF-3 is in the popular SOT-23 small surface-mount package
which is widely used in commercial and industrial applications where a small
board footprint is required.
This device is well suited for use in medium current applications such as
load switches.
SOT-23
G
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID at TA =25°C
ID at TA= 70°C
Rating
Units
20
V
+ 12
V
Continuous Drain Current
3
3.2
A
Continuous Drain Current
3
2.6
A
10
A
1.38
W
1
IDM
Pulsed Drain Current
PD at TA=25°C
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 150
°C
Thermal Data
Parameter
Value
Unit
Maximum Thermal Resistance, Junction-ambient
90
°C/W
Symbol
Rthj-a
Ordering Information
AP2302GN-HF-3TR
RoHS-compliant halogen-free SOT-23, shipped on tape and reel, 3000pcs/reel
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200902046-3
1/5
Advanced Power
Electronics Corp.
AP2302GN-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
20
-
-
V
-
0.1
-
V/°C
VGS=4.5V, ID=3.6A
-
-
85
mΩ
VGS=2.5V, ID=3.1A
-
-
115
mΩ
0.5
-
1.2
V
BVDSS
Drain-Source Breakdown Voltage
∆ BV DSS/∆ Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
RDS(ON)
VGS=0V, ID=250uA
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=3.6A
-
6
-
S
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70 C) VDS=20V ,VGS=0V
-
-
10
uA
Gate-Source Leakage
VGS=±12V, VDS=0V
-
-
±100
nA
ID=3.6A
-
4.4
-
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=10V
-
0.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
1.9
-
nC
VDS=10V
-
5.2
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=3.6A
-
37
-
ns
td(off)
Turn-off Delay Time
RG=6Ω , VGS=5V
-
15
-
ns
tf
Fall Time
RD=2.8Ω
-
5.7
-
ns
Ciss
Input Capacitance
VGS=0V
-
145
-
pF
Coss
Output Capacitance
VDS=10V
-
100
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Rg
Gate Resistance
f=1.0MHz
-
5.3
8
Ω
Min.
Typ.
-
-
1
A
-
-
10
A
-
-
1.2
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.2V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
1
2
Forward On Voltage
IS=1.6A, VGS=0V
Max. Units
Notes:
1. Pulse width limited by maximum junction temperature.
2. Pulse test - pulse width < 300µs , duty cycle < 2%
2
3. Surface mounted on 1in copper pad of FR4 board, t <10sec; 270°C/W when mounted on minimum copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
2/5
Advanced Power
Electronics Corp.
AP2302GN-HF-3
Typical Electrical Characteristics
10
6
o
o
T A =25 C
5
ID , Drain Current (A)
8
ID , Drain Current (A)
T A =150 C
4.5V
3.5V
3.0V
2.5V
6
4
V G =2.0V
4.5V
3.5V
3.0V
2.5V
4
3
V G =2.0V
2
2
1
0
0
0.0
0.5
1.0
1.5
2.0
0.0
2.5
V DS , Drain-to-Source Voltage (V)
1.0
1.5
2.0
2.5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
1.8
I D =3.6A
I D = 3.1 A
1.6
Normalized RDS(ON)
T A =25 o C
90
RDS(ON) (mΩ )
0.5
80
V G =4.5V
1.4
1.2
1.0
70
0.8
0.6
60
2
3
4
-50
5
Fig 3.
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
On-Resistance vs.
Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
10.0
1.4
VGS(th) (V)
IS (A)
1.0
1.0
T j =150 o C
T j =25 o C
0.6
0.1
0.2
0.1
0.5
0.9
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
1.3
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
3/5
Advanced Power
Electronics Corp.
AP2302GN-HF-3
Typical Electrical Characteristics (cont.)
12
f=1.0MHz
1000
I D =3.6A
V DS =10V
8
C (pF)
VGS , Gate to Source Voltage (V)
10
6
C iss
100
C oss
4
C rss
2
10
0
0
2
4
6
8
1
10
5
Fig 7. Gate Charge Characteristics
17
13
21
29
25
Fig 8. Typical Capacitance Characteristics
100
Normalized Thermal Response (Rthja)
1
10
ID (A)
9
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
1ms
1
10ms
100ms
0.1
o
T A =25 C
Single Pulse
1s
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.01
T
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 270°C/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
1
0.1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Circuit
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Charge
Q
Fig 12. Gate Charge Waveform
4/5
Advanced Power
Electronics Corp.
AP2302GN-HF-3
Package Dimensions: SOT-23
D
3
E1
1
Millimeters
SYMBOLS
D1
E
2
e
MIN
NOM
MAX
A
1.00
1.15
1.30
A1
0.00
--
0.10
A2
0.10
0.15
0.25
D1
0.30
0.40
0.50
e
1.70
2.00
2.30
D
2.70
2.90
3.10
E
2.40
2.65
3.00
E1
1.40
1.50
1.60
1. All dimensions are in millimeters.
A
2. Dimensions do not include mold protrusions.
A2
A1
Marking Information: SOT-23
Product: N2 = AP2302GN-HF-3
N2XX
©2010 Advanced Power Electronics Corp. USA
www.a-powerusa.com
Date/lot code
For details of how to convert this
to standard YYWW date code format,
please contact us directly.
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