bq2002C NiCd/NiMH Fast-Charge Management IC Features General Description

bq2002C NiCd/NiMH Fast-Charge Management IC Features General Description
bq2002C
NiCd/NiMH Fast-Charge Management IC
Features
General Description
➤
The bq2002C Fast-Charge IC is a lowcost CMOS battery-charge controller
providing reliable charge termination
for both NiCd and NiMH battery applications. Controlling a current-limited
or constant-current supply allows the
bq2002C to be the basis for a costeffective stand-alone or system-integrated charger. The bq2002C integrates fast charge with pulsed-trickle
control in a single IC for charging one
or more NiCd or NiMH battery cells.
➤
➤
Fast charge of nickel cadmium
or nickel-metal hydride batteries
Direct LED output displays
charge status
Fast-charge termination by -∆V,
maximum voltage, maximum
temperature, and maximum
time
➤
Internal band-gap voltage reference
➤
Selectable pulse-trickle charge
rates
➤
Low-power mode
➤
8-pin 300-mil DIP or 150-mil
SOIC
Pin Connections
Fast charge is initiated on application
of the charging supply or battery
replacement. For safety, fast charge is
inhibited if the battery temperature
and voltage are outside configured
limits.
Fast charge is terminated by any of
the following:
n
Peak voltage detection (PVD)
n
Negative delta voltage (-∆V)
n
Maximum voltage
n
Maximum temperature
n
Maximum time
After fast charge, the bq2002C pulsetrickles the battery per the preconfigured limits. Fast charge may be
inhibited using the INH pin. The
bq2002C may also be placed in lowstandby-power mode to reduce
system power consumption.
Pin Names
TM
1
8
CC
LED
2
7
INH
BAT
3
6
VCC
VSS
4
5
TS
TM
Timer mode select input
TS
Temperature sense input
LED
Charging status output
VCC
Supply voltage input
BAT
Battery voltage input
INH
Charge inhibit input
VSS
System ground
CC
Charge control output
8-Pin DIP or
Narrow SOIC
PN-200201.eps
SLUS136 - AUGUST 2011
1
bq2002C
TM
Charge control output
CC
Pin Descriptions
An open-drain output used to control the
charging current to the battery. CC switching to high impedance (Z) enables charging
current to flow, and low to inhibit charging
current. CC is modulated to provide pulse
trickle.
Timer mode input
A three-level input that controls the settings
for the fast charge safety timer, voltage termination mode, pulse-trickle, and voltage
hold-off time.
LED
Functional Description
Charging output status
Open-drain output that indicates the charging
status.
BAT
Figure 2 shows a state diagram and Figure 3 shows a
block diagram of the bq2002C.
Battery input voltage
Battery Voltage and Temperature
Measurements
The battery voltage sense input. The input to
this pin is created by a high-impedance resistor divider network connected between
the positive and negative terminals of the
battery.
VSS
System ground
TS
Temperature sense input
Battery voltage and temperature are monitored for
maximum allowable values. The voltage presented on
the battery sense input, BAT, should represent a
single-cell potential for the battery under charge. A
resistor-divider ratio of
RB1
=N-1
RB2
Input for an external battery temperature
monitoring thermistor.
VCC
is recommended to maintain the battery voltage within
the valid range, where N is the number of cells, RB1 is
the resistor connected to the positive battery terminal,
and RB2 is the resistor connected to the negative
battery terminal. See Figure 1.
Supply voltage input
5.0V ± 20% power input.
INH
Charge inhibit input
Note: This resistor-divider network input impedance to
end-to-end should be at least 200kΩ and less than 1 MΩ.
When high, INH suspends the fast charge in
progress. When returned low, the IC resumes operation at the point where initially
suspended.
A ground-referenced negative temperature coefficient
thermistor placed near the battery may be used as a lowcost temperature-to-voltage transducer. The temperature
sense voltage input at TS is developed using a resistorthermistor network between VCC and VSS. See Figure 1.
VCC
PACK +
RT
RB1
VCC
R3
BAT
bq2002C
TM
RB2
TS
N
T
C
bq2002C
R4
VSS
VSS
BAT pin connection
Mid-level
setting for TM
Thermistor connection
NTC = negative temperature coefficient thermistor.
Fg2002/C.eps
Figure 1. Voltage and Temperature Monitoring and TM Pin Configuration
2
bq2002C
Battery Voltage
too High?
Chip on
4.0V
VCC
VBAT > 2V
VBAT < 2V
Battery Voltage
too Low?
VBAT < 0.84V
0.84V < VBAT
VTS > VCC/2
VTS < VCC/2
Battery
Temperature?
Charge
Pending
Fast
LED =
Low
VBAT > 0.84V and
VBAT < 2V and
VTS > VCC/2
VBAT > 2V or
VTS < VCC/2 or
PVD or - V or
Maximum Time Out
Trickle
LED =
Flash
VBAT > 2V
VBAT
2V
Trickle
LED = Z
SD2002C.eps
Figure 2. State Diagram
Clock
Phase
Generator
OSC
TM
Timing
Control
Sample
History
Voltage
Reference
PVD, - V
ALU
A to D
Converter
INH
Charge-Control
State Machine
LBAT
Check
HTF TCO
Check Check
Power-On
Reset
CC
LED
TS
Power
Down
VCC
MCV
Check
BAT
VSS
Bd2002CEG.eps
Figure 3. Block Diagram
3
bq2002C
VCC = 0
Fast Charging
Pulse-Trickle
Fast Charging
1s
CC Output
See
Table 1
Charge initiated by application of power
Charge initiated by battery replacement
LED
TD2002C1.eps
Figure 4. Charge Cycle Phases
pending state. In this state pulse trickle charge is
applied to the battery and the LED flashes until the
voltage and temperature come into the allowed fast
charge range or VBAT rises above VMCV. Anytime VBAT
≥ VMCV, the IC enters the Charge Complete/Battery
Absent state. In this state the LED is off and trickle
charge is applied to the battery until the next new
charge cycle begins.
Starting A Charge Cycle
Either of two events starts a charge cycle (see Figure 4):
1. Application of power to VCC or
2. Voltage at the BAT pin falling through the maximum
cell voltage VMCV where
Fast charge continues until termination by one or more of
the five possible termination conditions:
VMCV = 2V ±5%.
If the battery is within the configured temperature and
voltage limits, the IC begins fast charge. The valid
battery voltage range is VLBAT < VBAT < VMCV, where
VLBAT = 0.175 ∗ VCC ±20%
The valid temperature range is VTS > VHTF where
VHTF = 0.6 ∗ VCC ±5%.
n
Peak voltage detection (PVD)
n
Negative delta voltage (-∆V)
n
Maximum voltage
n
Maximum temperature
n
Maximum time
If VBAT ≤ VLBAT or VTS ≤ VHTF, the IC enters the charge-
Table 1. Fast-Charge Safety Time/Hold-Off Table
Corresponding
Fast-Charge
Rate
TM
Termination
Typical
FastCharge
Time Limits
(minutes)
C/2
Mid
PVD
160
300
C/32
73
18.7
1C
Low
PVD
80
150
C/32
37
18.7
2C
High
-∆V
40
75
C/32
18
9.4
Notes:
Typical PVD
and -∆V
Hold-Off
Time (seconds)
Typical conditions = 25°C, VCC = 5.0V
Mid = 0.5 * VCC ±0.5V
Tolerance on all timing is ±12%.
4
PulseTrickle
Rate
PulseTrickle
Pulse Width
(ms)
Maximum
Synchronized
Sampling
Period
(seconds)
bq2002C
_______________________________________________________________________
PVD and -∆V Termination
There are two modes for voltage termination, depending on
the state of TM. For -∆V (TM = high), if VBAT is lower than any
previously measured value by 12mV ±3mV, fast charge is
terminated. For PVD (TM = low or mid), a decrease of 2.5mV
±2.5mV terminates fast charge. The PVD and -∆V tests are
valid in the range 1V<VBAT <2V.
Synchronized Voltage Sampling
Voltage sampling at the BAT pin for PVD and -∆V termi nation
may be synchronized to an external stimulus using the INH
input. Low-high-low input pulses between 100ns and 3.5ms in
width must be applied at the INH pin with a frequency
greater than the “maximum synchronized sampling period”
set by the state of the TM pin as shown in Table 1. Voltage is
sampled on the falling edge of such pulses. If the time between
pulses is greater than the synchronizing period, voltage
sampling “free-runs” at once every 17 seconds. A sample is
taken by averaging together voltage measurements taken
57µs apart. The IC takes 32 measurements in PVD mode and
16 measurements in -∆V mode. The resulting sample periods
(9.17 and 18.18ms, respectively) filter out harmonics centered
around 55 and 109Hz. This technique minimizes the effect of
any AC line ripple that may feed through the power supply
from either 50 or 60Hz AC sources. If the INH input remains
high for more than 12ms, the voltage sample history kept by
the IC and used for PVD and -∆V termination decisions is
erased and a new history is started. Such a reset is required
when transitioning from free-running to synchronized voltage
sampling. The response of the IC to pulses less than 100ns in
width or between 3.5ms and 12ms is indeterminate. The
tolerance on all timing is ±12%.
Voltage Termination Hold-off
A hold-off period occurs at the start of fast charging. During
the hold-off time, the PVD and -∆V terminations are disabled.
This avoids premature termination on the voltage spikes
sometimes produced by older batteries when fast-charge
current is first applied. Maximum voltage and temperature
terminations are not affected by the hold-off period.
Maximum Voltage, Temperature, and Time
Any time the voltage on the BAT pin exceeds the maximum
cell voltage, VMCV, fast charge is terminated.
Maximum temperature termination occurs anytime the
voltage on the TS pin falls below the temperature cut-off
threshold VTCO, where
VTCO = 0.5 x VCC ± 5%.
Maximum charge time is configured using the TM pin. Time
settings are available for corresponding charge rates of C/2,
1C, and 2C. Maximum time-out termination is enforced on the
fast-charge phase. There is no time limit on the trickle-charge
phase.
Pulse-Trickle Charge
Pulse-trickle is used to compensate for self-discharge while
the battery is idle in the charger. The battery is pulse-trickle
charged by driving the CC pin active once per second for the
period specified in Table 1. This results in a trickle rate of
C/32.
TM Pin
The TM pin is a three-level pin used to select the charge
timer, voltage termination mode, trickle rate, and voltage
hold-off period options. Table 1 describes the states selected
by the TM pin. The mid-level selection input is developed by a
resistor divider between VCC and ground that fixes the voltage
on TM at VCC/2 ± 0.5V. See Figure 4.
Charge Status Indication
A fast charge in progress is uniquely indicated when the LED
pin goes low. In the charge pending state, the LED pin is
driven low for 500ms, then to high-Z for 500ms. The LED pin
is driven to the high-Z state for all other conditions. Figure 2
outlines the state of the LED pin during charge.
Charge Inhibit
Fast charge may be inhibited by using the INH pin. When
high, INH suspends all fast charge activity and the internal
charge timer. INH freezes the current state of LED until
inhibit is removed. Temperature monitoring is not affected by
the INH pin. During charge inhibit, the bq2002C continues to
pulse-trickle charge the battery per the TM selection. When
INH returns low, charge control and the charge timer resume
from the point where INH became active.
Low-Power Mode
The IC enters a low-power state when V BAT is driven above
the power-down threshold (VPD) where:
VPD = VCC - (1V ±0.5V)
Both the CC pin and the LED are driven to the high-Z state.
The operating current is reduced to less than 1µA in this
mode. When VBAT returns to a value below V PD, the IC pulsetrickle charges until the next new charge cycle begins.
5
bq2002C
5
bq2002C
Absolute Maximum Ratings
Symbol
Parameter
Minimum
Maximum
Unit
VCC
VCC relative to VSS
-0.3
+7.0
V
VT
DC voltage applied on any pin
excluding VCC relative to VSS
-0.3
+7.0
V
TOPR
Operating ambient temperature
0
+70
°C
TSTG
Storage temperature
-40
+85
°C
TSOLDER
Soldering temperature
-
+260
°C
TBIAS
Temperature under bias
-40
+85
°C
Note:
Commercial
10 sec max.
Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be limited to the Recommended DC Operating Conditions detailed in this data sheet. Exposure to conditions beyond the operational limits for extended periods of time may affect device reliability.
DC Thresholds
Symbol
Notes
(TA = 0 to 70°C; VCC ± 20%)
Parameter
Rating
Tolerance
Unit
Notes
VTCO
Temperature cutoff
0.5 * VCC
±5%
V
VTS ≤ VTCO inhibits/terminates
fast charge
VHTF
High-temperature fault
0.6 ∗ VCC
±5%
V
VTS ≤ VHTF inhibits fast charge
start
VMCV
Maximum cell voltage
2
±5%
V
VBAT ≥ VMCV inhibits/terminates
fast charge
VLBAT
Minimum cell voltage
0.175 ∗ VCC
±20%
V
VBAT ≤ VLBAT inhibits fast charge
-∆V
BAT input change for
-∆V detection
-12
±3
mV
PVD
BAT input change for
PVD detection
-2.5
±2.5
mV
6
bq2002C
Recommended DC Operating Conditions (TA = 0 to 70°C)
Symbol
Condition
Minimum
Typical
Maximum
Unit
4.0
5.0
6.0
V
Notes
VCC
Supply voltage
VDET
-∆V, PVD detect voltage
1
-
2
V
VBAT
Battery input
0
-
VCC
V
VTS
Thermistor input
0.5
-
VCC
V
VTS < 0.5V prohibited
VIH
Logic input high
0.5
-
-
V
INH
Logic input high
VCC - 0.5
-
-
V
TM
Logic input mid
VCC
-
+ 0.5
V
TM
VIM
- 0.5
2
VCC
2
Logic input low
-
-
0.1
V
INH
Logic input low
-
-
0.5
V
TM
VOL
Logic output low
-
-
0.8
V
LED, CC, IOL = 10mA
VPD
Power down
VCC - 1.5
-
VCC - 0.5
V
VBAT ≥ VPD max. powers
down bq2002C;
VBAT < VPD min. =
normal operation.
ICC
Supply current
-
-
500
µA
Outputs unloaded,
VCC = 5.1V
ISB
Standby current
-
-
1
µA
VCC = 5.1V, VBAT = VPD
IOL
LED, CC sink
10
-
-
mA
@VOL = VSS + 0.8V
IL
Input leakage
-
-
±1
µA
INH, CC, V = VSS to VCC
IOZ
Output leakage in
high-Z state
-5
-
-
µA
LED, CC
VIL
Note:
All voltages relative to VSS.
7
bq2002C
Impedance
Symbol
Parameter
Minimum
Typical
Maximum
Unit
RBAT
Battery input impedance
50
-
-
MΩ
RTS
TS input impedance
50
-
-
MΩ
Timing
Symbol
(TA = 0 to +70°C; VCC ± 10%)
Parameter
Minimum
Typical
Maximum
Unit
-12
-
12
%
dFCV
Time base variation
Note:
Typical is at TA = 25°C, VCC = 5.0V.
8
Notes
bq2002C
8-Pin DIP (PN)
8-Pin PN (0.300" DIP)
Inches
D
E1
E
A
L
B1
A1
C
e
B
S
G
9
Millimeters
Dimension
A
Min.
Max.
Min.
Max.
0.160
0.180
4.06
4.57
A1
0.015
0.040
0.38
1.02
B
0.015
0.022
0.38
0.56
B1
0.055
0.065
1.40
1.65
C
0.008
0.013
0.20
0.33
D
0.350
0.380
8.89
9.65
E
0.300
0.325
7.62
8.26
E1
0.230
0.280
5.84
7.11
e
0.300
0.370
7.62
9.40
G
0.090
0.110
2.29
2.79
L
0.115
0.150
2.92
3.81
S
0.020
0.040
0.51
1.02
bq2002C
8-Pin SOIC Narrow (SN)
8-Pin SN (0.150" SOIC)
Inches
10
Millimeters
Dimension
A
Min.
Max.
Min.
Max.
0.060
0.070
1.52
1.78
A1
0.004
0.010
0.10
0.25
B
0.013
0.020
0.33
0.51
C
0.007
0.010
0.18
0.25
D
0.185
0.200
4.70
5.08
E
0.150
0.160
3.81
4.06
e
0.045
0.055
1.14
1.40
H
0.225
0.245
5.72
6.22
L
0.015
0.035
0.38
0.89
bq2002C
____________________________________________________________________________
Data Sheet Revision History
Change No.
1
2
Page No.
All
5
Description
Revised format and outline of this data sheet
Removed "top-off"
Note: Change 1 = Sept. 1997 B changes from Dec. 1995.
Note: Change 2 = July 2011
Ordering Information
11
PACKAGE OPTION ADDENDUM
www.ti.com
29-Jul-2011
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package
Drawing
Pins
Package Qty
Eco Plan
(2)
Lead/
Ball Finish
MSL Peak Temp
BQ2002CPN
ACTIVE
PDIP
P
8
50
Pb-Free (RoHS)
CU NIPDAU N / A for Pkg Type
BQ2002CPNE4
ACTIVE
PDIP
P
8
50
Pb-Free (RoHS)
CU NIPDAU N / A for Pkg Type
BQ2002CSN
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
BQ2002CSNG4
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
BQ2002CSNTR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
BQ2002CSNTRG4
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU Level-1-260C-UNLIM
(3)
Samples
(Requires Login)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
29-Jul-2011
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
28-Jul-2011
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
BQ2002CSNTR
Package Package Pins
Type Drawing
SOIC
D
8
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
2500
330.0
12.4
Pack Materials-Page 1
6.4
B0
(mm)
K0
(mm)
P1
(mm)
5.2
2.1
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
28-Jul-2011
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
BQ2002CSNTR
SOIC
D
8
2500
340.5
338.1
20.6
Pack Materials-Page 2
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Interface
interface.ti.com
Security
www.ti.com/security
Logic
logic.ti.com
Space, Avionics and Defense
www.ti.com/space-avionics-defense
Power Mgmt
power.ti.com
Transportation and
Automotive
www.ti.com/automotive
Microcontrollers
microcontroller.ti.com
Video and Imaging
www.ti.com/video
RFID
www.ti-rfid.com
Wireless
www.ti.com/wireless-apps
RF/IF and ZigBee® Solutions
www.ti.com/lprf
TI E2E Community Home Page
e2e.ti.com
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2011, Texas Instruments Incorporated
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