W49F002UT-70B даташит

W49F002UT-70B даташит
W49F002U
256K × 8 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W49F002U is a 2-megabit, 5-volt only CMOS flash memory organized as 256K × 8 bits. The
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is
not required. The unique cell architecture of the W49F002U results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory products).
The device can also be programmed and erased using standard EPROM programmers.
FEATURES
•
Single 5-volt operations:
− 5-volt Read
− 5-volt Erase
− 5-volt Program
•
Fast Program operation:
− Byte-by-Byte programming: 35 µS (typ.)
•
Fast Erase operation: 100 mS (typ.)
•
Fast Read access time: 70/90/120 nS
•
Endurance: 10K cycles (typ.)
•
Ten-year data retention
•
Hardware data protection
•
One 16K byte Boot Block with Lockout
protection
•
Two 8K byte Parameter Blocks
•
Two Main Memory Blocks (96K, 128K) Bytes
•
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20 µA (typ.)
Automatic program and erase timing with
internal VPP generation
End of program or erase detection
−
−
•
•
− Toggle bit
− Data polling
•
Latched address and data
•
TTL compatible I/O
•
JEDEC standard byte-wide pinouts
•
Available packages: 32-pin DIP, 32-pin
STSOP (8 mm × 14 mm), 32-pin TSOP
(8 mm × 20 mm) and 32-pin-PLCC
-1-
Publication Release Date: February 21, 2002
Revision A6
W49F002U
PIN CONFIGURATIONS
BLOCK DIAGRAM
VDD
#RESET
32
1
VDD
VSS
A16
2
31
#WE
A15
3
30
A17
A12
4
29
A14
#CE
A7
5
28
A13
#OE
27
A8
26
A9
25
A11
A6
6
A5
7
A4
8
32-pin
DIP
A3
9
24
#OE
A2
10
23
A10
A1
11
22
#CE
A0
12
21
DQ7
DQ0
13
20
DQ6
DQ1
14
19
DQ5
DQ2
15
18
DQ4
Vss
16
17
#WE
CONTROL
A0
DQ3
DECODER
A
1
5
A
1
6
4
3
2
1 32 31 30
V #
D W
D E
A
1
7
5
29
A14
A6
6
28
A13
A5
7
27
A8
A4
8
A3
9
A2
A1
32-pin
PLCC
PARAMETER
BLOCK1
8K BYTES
PARAMETER
BLOCK2
8K BYTES
A17
A7
DQ7
BOOT BLOCK
16K BYTES
.
A
1
2
DQ0
.
.
#RESET
.
#
R
E
S
E
T
OUTPUT
BUFFER
MAIN MEMORY
BLOCK1
96K BYTES
3FFFF
3C000
3BFFF
3A000
39FFF
38000
37FFF
20000
MAIN MEMORY 1FFFF
BLOCK2
00000
128K BYTES
26
A9
25
A11
10
24
#OE
11
23
A10
A0
12
22
#CE
DQ0
13
21
DQ7
14 15 16 17 18 19 20
D D
Q Q
1 2
V
s
s
D
Q
3
D
Q
4
D
Q
5
D
Q
6
PIN DESCRIPTION
A11
A9
A8
A13
A14
A17
1
2
31
3
30
4
5
29
#WE
VDD
7
#RESET
A16
A15
A12
A7
A6
A5
A4
32
28
6
8
9
10
11
12
13
14
15
16
27
32-pin
TSOP
26
25
24
23
22
21
20
19
18
17
#OE
A10
SYMBOL
#CE
DQ7
DQ6
DQ5
DQ4
DQ3
Vss
DQ2
DQ1
DQ0
A0
A1
A2
A3
#RESET
Reset
A0 − A17
Address Inputs
DQ0 − DQ7
-2-
PIN NAME
Data Inputs/Outputs
#CE
Chip Enable
#OE
Output Enable
#WE
Write Enable
VDD
Power Supply
VSS
Ground
W49F002U
FUNCTIONAL DESCRIPTION
Device Operation
Read Mode
The read operation of the W49F002U is controlled by #CE and #OE, both of which have to be low for
the host to obtain data from the outputs. #CE is used for device selection. When #CE is high, the chip
is de-selected and only standby power will be consumed. #OE is the output control and is used to gate
data from the output pins. The data bus is in high impedance state when either #CE or #OE is high.
Refer to the timing waveforms for details.
Write Mode
Device erase and program are accomplished via the command register. The content of the register
serves as inputs to the internal state machine. The state machine outputs dictate the function of the
device.
The command register itself does not occupy any addressable memory location. The register is a latch
used to store the commands, along with the address and data information needed to execute the
command. The command register is written to bring #WE to logic low state when #CE is at logic low
state and #OE is at logic high state. Addresses are latched on the falling edge of #WE or #CE,
whichever happens later; while data is latched on the rising edge of #WE or #CE, whichever happens
first. Standard microprocessor write timings are used.
Refer to AC Write Characteristics and the Erase/Programming Waveforms for specific timing
parameters.
Standby Mode
There are two ways to implement the standby mode on the W49F002U device, both using the #CE pin.
A CMOS standby mode is achieved with the #CE input held at VDD -0.3V. Under this condition the current
is typically reduced to less than 100 µA. A TTL standby mode is achieved with the #CE pin held at VIH.
Under this condition the current is typically reduced to less than 3 mA.
In the standby mode the outputs are in the high impedance state, independent of the #OE input.
Output Disable Mode
With the #OE input at a logic high level (VIH), output from the device is disabled. This will cause the
output pins to be in a high impedance state.
Auto-select Mode
The auto-select mode allows the reading of a binary code from the device and will identify its
manufacturer and type. This mode is intended to be used by programming equipment for the purpose
of automatically matching the device to be programmed with its corresponding programming algorithm.
This mode is functional over the entire temperature range of the device.
To activate this mode, the programming equipment must force VID (11.5V to 12.5V) on address pin A9.
Two identifier bytes may then be sequenced from the device outputs by toggling address A0 from VIL
to VIH. All addresses are don′t cares except A0 and A1 (see "Auto-select Codes"). Note: The
hardware SID read function is not included in all parts; please refer to Ordering Information for
details.
-3-
Publication Release Date: February 21, 2002
Revision A6
W49F002U
The manufacturer and device codes may also be read via the command register; i.e., the W49F002U
is erased or programmed in a system without access to high voltage on the A9 pin. The command
sequence is illustrated in "Auto-select Codes".
Byte 0 (A0 = VIL) represents the manufacturer′s code (Winbond = DAh) and byte 1 (A0 = VIH) the
device identifier code (W49F002U = 0Bh,). All identifiers for manufacturer and device will exhibit odd
parity with DQ7 defined as the parity bit. In order to read the proper device codes when executing the
Auto-select, A1 must be VIL.
Reset Mode: Hardware Reset
The #RESET pin provides a hardware method of resetting the device to reading array data. When the
system drives the #RESET pin low for at least a period of tRP, the device immediately terminates any
operation in progress, tri-states all data output pins, and ignores all read/write attempts for the duration
of the #RESET pulse. The device also resets the internal state machine to reading array data. The
operation that was interrupted should be reinitiated once the device is ready to accept another
command sequence, to ensure data integrity.
Current is reduced for the duration of the #RESET pulse. When #RESET is held at VIL, the device
enters the TTL standby mode; if #RESET is held at Vss, the device enters the CMOS standby mode.
The #RESET pin may be tied to the system reset circuitry. A system reset would thus also reset the
Flash memory, enabling the system to read the boot-up firmware from the Flash memory.
Data Protection
The W49F002U is designed to offer protection against accidental erasure or programming caused by
spurious system level signals that may exist during power transitions. During power up the device
automatically resets the internal state machine in the Read mode. Also, with its control register
architecture, alteration of the memory contents only occurs after successful completion of specific
multi-bus cycle command sequences. The device also incorporates several features to prevent
inadvertent write cycles resulting from VDD power-up and power-down transitions or system noise.
Low VDD Inhibit
To avoid initiation of a write cycle during VDD power-up and power-down, the W49F002U locks out
when VDD < 2.5V. The write and read operations are inhibited when VDD is less than 2.5V typical. The
W49F002U ignores all write and read operations until VDD > 2.5V. The user must ensure that the
control pins are in the correct logic state when VDD > 2.5V to prevent unintentional writes.
Write Pulse "Glitch" Protection
Noise pulses of less than 10 nS (typical) on #OE, #OE, or #WE will not initiate a write cycle.
Logical Inhibit
Writing is inhibited by holding any one of #OE = VIL, #CE = VIH, or #WE = VIH. To initiate a write cycle
#CE and #WE must be a logical zero while #OE is a logical one.
Power-up Write and Read Inhibit
Power-up of the device with #WE = #CE = VIL and #OE = VIH will not accept commands on the rising
edge of #WE. The internal state machine is automatically reset to the read mode on power-up.
-4-
W49F002U
Command Definitions
Device operations are selected by writing specific address and data sequences into the command
register. Writing incorrect address and data values or writing them in the improper sequence will reset
the device to the read mode. "Command Definitions" defines the valid register command sequences.
Moreover, both Reset/Read commands are functionally equivalent, resetting the device to the read
mode.
Read Command
The device will automatically power-up in the read state. In this case, a command sequence is not
required to read data. Standard microprocessor read cycles will retrieve array data. This default value
ensures that no spurious alteration of the memory content occurs during the power transition.
The device will automatically returns to read state after completing an Embedded Program or
Embedded Erase algorithm.
Refer to the AC Read Characteristics and Waveforms for the specific timing parameters.
Auto-select Command
Flash memories are intended for use in applications where the local CPU can alter memory contents.
As such, manufacture and device codes must be accessible while the device resides in the target
system. PROM programmers typically access the signature codes by raising A9 to a high voltage.
However, multiplexing high voltage onto the address lines is not generally a desirable system design
practice.
The device contains an auto-select command operation to supplement traditional PROM programming
methodology. The operation is initiated by writing the auto-select command sequence into the
command register. Following the command write, a read cycle from address XX00H retrieves the
manufacture code of DAh. A read cycle from address XX01H returns the device code (W49F002U =
0Bh).
Byte Program Command
The device is programmed on a byte-by-byte basis. Programming is a four-bus-cycle operation. The
program command sequence is initiated by writing two "unlock" write cycles, followed by the program
set-up command. The program address and data are written next, which in turn initiate the Embedded
program algorithm. Addresses are latched on the falling edge of #CE or #WE, whichever happens later
and the data is latched on the rising edge of #CE or #WE, whichever happens first. The rising edge of
#CE or #WE (whichever happens first) begins programming using the Embedded Program Algorithm.
Upon executing the algorithm, the system is not required to provide further controls or timings. The
device will automatically provide adequate internally generated program pulses and verify the
programmed cell margin.
The automatic programming operation is completed when the data on DQ7 (also used as Data Polling)
is equivalent to the data written to this bit at which time the device returns to the read mode and
addresses are no longer latched (see "Hardware Sequence Flags"). Therefore, the device requires that
a valid address to the device be supplied by the system at this particular instance of time for Data
Polling operations. Data Polling must be performed at the memory location which is being
programmed.
-5-
Publication Release Date: February 21, 2002
Revision A6
W49F002U
Any commands written to the chip during the Embedded Program Algorithm will be ignored. If a
hardware reset occurs during the programming operation, the data at that particular location will be
corrupted.
Programming is allowed in any sequence and across sector boundaries. Beware that a data "0" cannot
be programmed back to a "1". Only erase operations can convert "0"s to "1"s.
Refer to the Embedded Programming Algorithm using typical command strings and bus operations.
Chip Erase Command
Chip erase is a six-bus-cycle operation. There are two "unlock" write cycles. These are followed by
writing the "set-up" command. Two more "unlock" write cycles are then followed by the chip erase
command.
Chip erase does not require the user to program the device prior to erase. Upon executing the
Embedded Erase Algorithm command sequence the device will automatically erase and verify the
entire memory for an all one data pattern. The erase is performed sequentially on each sector at the
same time (see "Feature"). The system is not required to provide any controls or timings during these
operations.
The automatic erase begins on the rising edge of the last #WE pulse in the command sequence and
terminates when the data on DQ7 is "1" at which time the device returns to read the mode.
Refer to the Embedded Erase Algorithm using typical command strings and bus operations.
Sector Erase Command
Sector erase is a six bus cycle operation. There are two "unlock" write cycles. These are followed by
writing the "set-up" command. Two more "unlock" write cycles are then followed by the sector erase
command. The sector address (any address location within the desired sector) is latched on the falling
edge of #WE, while the command (30H) is latched on the rising edge of #WE.
Sector erase does not require the user to program the device prior to erase.
When erasing a sector
or sectors the remaining unselected sectors are not affected. The system is not required to provide any
controls or timings during these operations.
The automatic sector erase begins after the rising edge of the #WE pulse for the last sector erase
command pulse and terminates when the data on DQ7, Data Polling, is "1."
Refer to the Embedded Erase Algorithm using typical command strings and bus operations.
Write Operation Status
DQ7: Data Polling
The W49F002U device features Data Polling as a method to indicate to the host that the embedded
algorithms are in progress or completed.
During the Embedded Program Algorithm, an attempt to read the device will produce the complement
of the data last written to DQ7. Upon completion of the Embedded Program Algorithm, an attempt to
read the device will produce the true data last written to DQ7.
During the Embedded Erase Algorithm, an attempt to read the device will produce a "0" at the DQ7
output. Upon completion of the Embedded Erase Algorithm, an attempt to read the device will produce
a "1" at the DQ7 output.
The flowchart for Data Polling (DQ7) is shown in "Data Polling Algorithm".
-6-
W49F002U
For chip erase, the Data Polling is valid after the rising edge of the sixth pulse in the six #WE write
pulse sequence. For sector erase, the Data Polling is valid after the last rising edge of the sector erase
#WE pulse.
Just prior to the completion of Embedded Algorithm operations DQ7 may change asynchronously while
the output enable (#OE) is asserted low. This means that the device is driving status information on
DQ7 at one instant of time and then that byte′s valid data at the next instant of time. Depending on
when the system samples the DQ7 output, it may read the status or valid data. Even if the device has
completed the Embedded Algorithm operations and DQ7 has a valid data, the data outputs on DQ0 –
DQ6 may be still invalid. The valid data on DQ0 − DQ7 will be read on the successive read attempts.
The Data Polling feature is only active during the Embedded Programming Algorithm, Embedded
Erase Algorithm, or sector erase time-out (see "Command Definitions").
See " #DATA Polling During Embedded Algorithm Timing Diagrams".
DQ6: Toggle Bit
The W49F002U also features the "Toggle Bit" as a method to indicate to the host system that the
embedded algorithms are in progress or completed.
During an Embedded Program or Erase Algorithm cycle, successive attempts to read (#OE toggling)
data from the device at any address will result in DQ6 toggling between one and zero. Once the
Embedded Program or Erase Algorithm cycle is completed, DQ6 will stop toggling and valid data will
be read on the next successive attempt. During programming, the Toggle Bit is valid after the rising
edge of the fourth #WE pulse in the four write pulse sequence. For chip erase, the Toggle Bit is valid
after the rising edge of the sixth #WE pulse in the six write pulse sequence. For Sector erase, the
Toggle Bit is valid after the last rising edge of the sector erase #WE pulse. The Toggle Bit is active
during the sector erase time-out.
TABLE OF OPERATING MODES
Device Bus Operations
MODE
PIN
#CE
#OE
#WE
#RESET
A0 − A17
DQ0 − DQ7
Read
VIL
VIL
VIH
VIH
Ain
Dout
Write
VIL
VIH
VIL
VIH
Ain
Din
Write Inhibit
VIH
X
VIL
X
X
High Z/DOUT
VIH
X
X
VIH
X
High Z/DOUT
Standby
VIH
X
X
VIH
X
High Z
Output Disable
VIL
VIH
VIH
VIH
X
High Z
X
X
X
VIL
X
High Z
Reset
-7-
Publication Release Date: February 21, 2002
Revision A6
W49F002U
Auto-select Codes (High Voltage Method)
DESCRIPTION
#CE
#OE
#WE
OTHER
ADD
A9
A1
A0
DQ7
TO DQ0
Manufacturer ID: Winbond
VIL
VIL
VIH
X
VID
VIL
VIL
DAh
Device ID: W49F002U
(Top Boot Block)
VIL
VIL
VIH
X
VID
VIL
VIH
0Bh
Notes:
1. SA = Sector Address, X = Don′t Care. Sector Protection Verification: 01h (protected); 00h (unprotected).
2. The hardware SID read function is not included in all parts; please refer to Ordering Information for details.
Hardware Sequence Flags
OPERATION
DQ7
DQ6
(Note)
Standard Mode
Embedded Program Algorithm
Embedded Erase Algorithm
#DQ7
Toggle
0
Toggle
Note: DQ7 require a valid address when reading status information. Refer to the appropriate subsection for further details.
Command Definition(1)
COMMAND
No. of
1th Cycle
2nd Cycle
3rd Cycle
4th Cycle
5th Cycle
6th Cycle
DESCRIPTION
Cycles
Addr. Data
Addr. Data
Addr. Data
Addr. Data
Addr. Data
Addr. Data
2AAA
5555
5555
2AAA
55
5555
10
2AAA
55
SA
(3)
30
2AAA
55
5555
40
Read
1
Chip Erase
6
AIN
5555
DOUT
AA
55
80
AA
Sector Erase
6
5555
AA
2AAA
55
5555
80
5555
AA
Byte Program
4
5555
AA
2AAA
55
5555
A0
AIN
DIN
Boot Block Lockout
6
5555
AA
2AAA
55
5555
80
5555
AA
Product ID Entry
3
5555
AA
2AAA
55
5555
90
2AAA
55
5555
F0
Product ID Exit
(2)
3
5555
AA
Product ID Exit
(2)
1
XXXX
F0
Notes:
1. Address Format: A14 − A0 (Hex); Data Format: DQ7 − DQ0 (Hex)
2. Either one of the two Product ID Exit commands can be used.
3. SA means: Sector Address
If SA is within 3C000 to 3FFFF (Boot Block address range), and the Boot Block programming lockout feature is activated,
nothing will happen and the device will go back to read mode after 100nS.
If the Boot Block programming lockout feature is not activated, this command will erase Boot Block.
If SA is within 3A000 to 3BFFF (Parameter Block1 address range), this command will erase PB1.
If SA is within 38000 to 39FFF (Parameter Block2 address range), this command will erase PB2.
If SA is within 20000 to 37FFF (Main Memory Block1 address range), this command will erase MMB1.
If SA is within 00000 to 1FFFF (Main Memory Block2 address range), this command will erase MMB2.
-8-
W49F002U
Embedded Programming Algorithm
Start
Write Program Command Sequence
(see below)
#Data Polling/ Toggle bit
Pause TBP
No
Increment Address
Last Address
?
Yes
Programming Completed
Program Command Sequence (Address/Command):
5555H/AAH
2AAAH/55H
5555H/A0H
Program Address/Program Data
-9-
Publication Release Date: February 21, 2002
Revision A6
W49F002U
Embedded Erase Algorithm
Start
Write Erase Command Sequence
(see below)
#Data Polling or Toggle Bit
Successfully Completed
Pause T EC /T SEC
Erasure Completed
Chip Erase Command Sequence
(Address/Command):
Individual Sector Erase
Command Sequence
(Address/Command):
5555H/AAH
5555H/AAH
2AAAH/55H
2AAAH/55H
5555H/80H
5555H/80H
5555H/AAH
5555H/AAH
2AAAH/55H
2AAAH/55H
5555H/10H
Sector Address/30H
- 10 -
W49F002U
Embedded #Data Polling Algorithm
Start
Read Byte
(DQ0 - DQ7)
Address = VA
VA = Byte address for programming
= Any of the sector addresses within
the sector being erased during sector
erase operation
= Valid address equals any sector group
address during chip erase
No
DQ7 = Data
?
Yes
Pass
Embedded Toggle Bit Algorithm
Start
Read Byte
(DQ0 - DQ7)
Address = Don't Care
Yes
DQ6 = Toggle
?
No
Pass
- 11 -
Publication Release Date: February 21, 2002
Revision A6
W49F002U
Software Product Identification and Boot Block Lockout Detection Acquisition
Flow
Product
Identification
Entry (1)
Load data AA
to
address 5555
Product
Identification
and Boot Block
Lockout Detection
Mode (3)
Product
Identification Exit(6)
Load data AA
to
address 5555
(2)
Load data 55
to
address 2AAA
Read address = 0000
data = 00DA
Load data 90
to
address 5555
Read address = 0001
data = 00AE
Pause 10 µ S
Read address = 0002
data in DQ0 =1/0
(2)
(4)
Load data 55
to
address 2AAA
Load data F0
to
address 5555
Pause 10 µ S
(5)
Normal Mode
Notes for software product identification/boot block lockout detection:
(1) Data Format: DQ15 − DQ8 (Don't Care), DQ7 − DQ0 (Hex); Address Format: A14 − A0 (Hex)
(2) A1 − A16 = VIL; manufacture code is read for A0 = VIL; device code is read for A0 = VIH.
(3) The device does not remain in identification and boot block lockout detection mode if power down.
(4) If the output data in DQ0 = 1, the boot block programming lockout feature is activated; if the output data in DQ0 = 0, the lockout feature is
inactivated and the block can be programmed.
(5) The device returns to standard operation mode.
(6) Optional 1-write cycle (write F0 hex at XXXX address) can be used to exit the product identification/boot block lockout detection.
- 12 -
W49F002U
Boot Block Lockout Enable Acquisition Flow
Boot Block Lockout
Feature Set Flow
Load data AA
to
address 5555
Load data 55
to
address 2AAA
Load data 80
to
address 5555
Load data AA
to
address 5555
Load data 55
to
address 2AAA
Load data 40
to
address 5555
Pause 200 mS
Exit
- 13 -
Publication Release Date: February 21, 2002
Revision A6
W49F002U
DC CHARACTERISTICS
Absolute Maximum Ratings
PARAMETER
RATING
UNIT
-0.5 to +7.0
V
0 to +70
°C
-65 to +150
°C
D.C. Voltage on Any Pin to Ground Potential Except A9
-0.5 to VDD +1.0
V
Transient Voltage (<20 nS) on Any Pin to Ground Potential
-1.0 to VDD +1.0
V
-0.5 to 12.5
V
Power Supply Voltage to Vss Potential
Operating Temperature
Storage Temperature
Voltage on A9 Pin to Ground Potential
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
of the device.
DC Operating Characteristics
(VDD = 5.0V ±10%, VSS = 0V, TA = 0 to 70° C)
PARAMETER
SYM.
TEST CONDITIONS
LIMITS
MIN. TYP.
Power Supply
Current
ICC
#CE = #OE = VIL, #WE = VIH,
all DQs open
UNIT
MAX.
-
25
50
mA
-
2
3
mA
-
20
100
µA
Address inputs = VIL/VIH, at f = 5 MHz
Standby VDD Current
(TTL input)
ISB1
Standby VDD Current
ISB2
#CE = VIH, all DQs open
Other inputs = VIL/VIH
(CMOS input)
#CE = VDD -0.3V, all DQs open
Other inputs = VDD -0.3V/ Vss
Input Leakage
Current
ILI
VIN = Vss to VDD
-
-
10
µA
Output Leakage
Current
ILO
VOUT = Vss to VDD
-
-
10
µA
Input Low Voltage
VIL
-
-0.3
-
0.8
V
Input High Voltage
VIH
-
2.0
-
VDD +0.5
V
Output Low Voltage
VOL
IOL = 2.1 mA
-
-
0.45
V
Output High Voltage
VOH
IOH = -0.4 mA
2.4
-
-
V
- 14 -
W49F002U
Power-up Timing
PARAMETER
SYMBOL
TYPICAL
UNIT
Power-up to Read Operation
TPU. READ
100
µS
Power-up to Write Operation
TPU. WRITE
5
mS
CONDITIONS
MAX.
UNIT
CAPACITANCE
(VDD = 5.0V, TA = 25° C, f = 1 MHz)
PARAMETER
SYMBOL
I/O Pin Capacitance
CI/O
VI/O = 0V
12
pF
Input Capacitance
CIN
VIN = 0V
6
pF
AC CHARACTERISTICS
AC Test Conditions
PARAMETER
CONDITIONS
Input Pulse Levels
0V to 3V
Input Rise/Fall Time
<5 nS
Input/Output Timing Level
1.5V / 1.5V
Output Load
1 TTL Gate and CL = 30pF (for 70 nS/ 90 nS), 100 pF (for 120 nS)
AC Test Load and Waveform
+5V
1.8KΩ
DOUT
30 pF for 70nS / 90nS
100 pF for 120nS
(Including Jig and Scope)
1.3KΩ
Input
Output
3V
1.5V
1.5V
0V
Test Point
- 15 -
Test Point
Publication Release Date: February 21, 2002
Revision A6
W49F002U
AC Characteristics, continued
Read Cycle Timing Parameters
(VDD = 5.0V ±10%, VDD = 0V, TA = 0 to 70° C)
PARAMETER
SYM.
W49F002U-70
W49F002U-90 W49F002U-120
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
UNIT
Read Cycle Time
TRC
70
-
90
-
120
-
nS
Chip Enable Access Time
TCE
-
70
-
90
-
120
nS
Address Access Time
TAA
-
70
-
90
-
120
nS
Output Enable Access Time
TOE
-
35
-
40
-
50
nS
#CE Low to Active Output
TCLZ
0
-
0
-
0
-
nS
#OE Low to Active Output
TOLZ
0
-
0
-
0
-
nS
#CE High to High-Z Output
TCHZ
-
25
-
25
-
30
nS
#OE High to High-Z Output
TOHZ
-
25
-
25
-
30
nS
Output Hold from Address Change
TOH
0
-
0
-
0
-
nS
Write Cycle Timing Parameters
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Address Setup Time
TAS
0
-
-
nS
Address Hold Time
TAH
50
-
-
nS
#WE and #CE Setup Time
TCS
0
-
-
nS
#WE and #CE Hold Time
TCH
0
-
-
nS
#OE High Setup Time
TOES
0
-
-
nS
#OE High Hold Time
TOEH
0
-
-
nS
#CE Pulse Width
TCP
100
-
-
nS
#WE Pulse Width
TWP
100
-
-
nS
#WE High Width
TWPH
100
-
-
nS
Data Setup Time
TDS
50
-
-
nS
Data Hold Time
TDH
10
-
-
nS
Byte Programming Time
TBP
-
35
50
µS
Erase Cycle Time
TEC
-
0.1
0.2
S
Note: All AC timing signals observe the following guidelines for determining setup and hold times:
(a) High level signal's reference level is VIH and (b) low level signal's reference level is VIL.
- 16 -
W49F002U
AC Characteristics, continued
Data Polling and Toggle Bit Timing Parameters
PARAMETER
SYM.
W49F002U-70
W49F002U-90
W49F002U-120
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
UNIT
#OE to Data Polling Output Delay
TOEP
-
35
-
40
-
50
nS
#CE to Data Polling Output Delay
TCEP
-
70
-
90
-
120
nS
#OE to Toggle Bit Output Delay
TOET
-
35
-
40
-
50
nS
#CE to Toggle Bit Output Delay
TCET
-
70
-
90
-
120
nS
Reset Timing Parameters
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
VDD stable to Reset Active
TPRST
1
-
-
mS
Reset Pulse Width
TRSTP
500
-
-
nS
Reset Active to Output Float
TRSTF
-
-
50
nS
Reset Inactive to Input Active
TRST
1
-
-
µS
- 17 -
Publication Release Date: February 21, 2002
Revision A6
W49F002U
TIMING WAVEFORMS
Read Cycle Timing Diagram
TRC
Address A17-0
TCE
#CE
TOE
#OE
TOHZ
TOLZ
VIH
#WE
TCLZ
TOH
TCHZ
High-Z
High-Z
DQ7-0
Data Valid
Data Valid
TAA
#WE Controlled Command Write Cycle Timing Diagram
TAS
TAH
Address A17-0
#CE
TCS
TCH
TOES
TOEH
#OE
TWP
#WE
TWPH
TDS
DQ7-0
Data Valid
TDH
- 18 -
W49F002U
Timing Waveforms, continued
#CE Controlled Command Write Cycle Timing Diagram
TAS
TAH
Address A17-0
TCPH
TCP
#CE
TOES
TOEH
#OE
#WE
TDS
DQ7-0
High Z
Data Valid
TDH
Program Cycle Timing Diagram
Byte Program Cycle
Address A17-0
2AAA
5555
AA
DQ7-0
5555
55
Address
A0
Data-In
#CE
#OE
T WPH
#WE
TBP
TWP
Byte 0
Byte 1
Byte 2
- 19 -
Byte 3
Internal Write Start
Publication Release Date: February 21, 2002
Revision A6
W49F002U
Timing Waveforms, continued
#DATA Polling Timing Diagram
Address A17-0
An
An
An
An
#WE
TCEP
#CE
TOEH
TOES
#OE
TOEP
DQ7
X
X
X
X
TBP or TEC
Toggle Bit Timing Diagram
Address A17-0
#WE
#CE
TOES
TOEH
#OE
DQ6
TBP orTEC
- 20 -
W49F002U
Timing Waveforms, continued
Boot Block Lockout Enable Timing Diagram
Six byte code for Boot Block
Lockout Feature Enable
Address A17-0
DQ7-0
5555
2AAA
5555
AA
55
80
5555
2AAA
AA
5555
40
55
#CE
#OE
TWP
TEC
#WE
TWPH
SB0
SB1
SB2
SB3
SB4
SB5
Chip Erase Timing Diagram
Six-byte code for 5V-only software
chip erase
Address A17-0
DQ7-0
5555
2AAA
55
AA
5555
80
5555
AA
2AAA
55
5555
10
#CE
#OE
TWP
TEC
#WE
TWPH
SB0
SB1
SB2
SB3
- 21 -
SB4
SB5
Internal Erase starts
Publication Release Date: February 21, 2002
Revision A6
W49F002U
Timing Waveforms, continued
Sector Erase Timing Diagram
Six-byte code for 5V-only software
Main Memory Erase
Address A17-0
DQ7-0
5555
2AAA
55
AA
5555
5555
80
AA
2AAA
55
SA
30
#CE
#OE
TWP
TEC
#WE
TWPH
SB0
SB1
SB2
SB3
SB4
SB5
Internal Erase starts
SA = Sector Address
Reset Timing Diagram
VDD
TPRST
TRSTP
#RESET
TRSTF
Address A17-0
DQ7-0
- 22 -
TRST
W49F002U
ORDERING INFORMATION
PART NO.
ACCESS
TIME
STANDBY
VDD
CURRENT
MAX. (µA)
PACKAGE
CYCLE HARDWARE
SID READ
FUNCTION
(nS)
POWER
SUPPLY
CURRENT
MAX. (mA)
W49F002U-70B
70
50
100 (CMOS) 32-pin DIP
10K
Y
W49F002U-90B
90
50
100 (CMOS) 32-pin DIP
10K
Y
W49F002U-12B
120
50
100 (CMOS) 32-pin DIP
10K
Y
W49F002UT70B
70
50
100 (CMOS) 32-pin TSOP (8 mm × 20 mm)
10K
Y
W49F002UT90B
90
50
100 (CMOS) 32-pin TSOP (8 mm × 20 mm)
10K
Y
W49F002UT12B
120
50
100 (CMOS) 32-pin TSOP (8 mm × 20 mm)
10K
Y
W49F002UP70B
70
50
100 (CMOS) 32-pin PLCC
10K
Y
W49F002UP90B
90
50
100 (CMOS) 32-pin PLCC
10K
Y
W49F002UP12B
120
50
100 (CMOS) 32-pin PLCC
10K
Y
W49F002UQ70B
70
50
100 (CMOS) 32-pin STSOP (8 mm × 14 mm)
10K
Y
W49F002UQ90B
90
50
100 (CMOS) 32-pin STSOP (8 mm × 14 mm)
10K
Y
W49F002UQ12B
120
50
100 (CMOS) 32-pin STSOP (8 mm × 14 mm)
10K
Y
W49F002U70BN
70
50
100 (CMOS) 32-pin DIP
10K
N
W49F002U90BN
90
50
100 (CMOS) 32-pin DIP
10K
N
W49F002U12BN
120
50
100 (CMOS) 32-pin DIP
10K
N
W49F002UT70N
70
50
100 (CMOS) 32-pin TSOP (8 mm × 20 mm)
10K
N
W49F002UT90N
90
50
100 (CMOS) 32-pin TSOP (8 mm × 20 mm)
10K
N
W49F002UT12N
120
50
100 (CMOS) 32-pin TSOP (8 mm × 20 mm)
10K
N
W49F002UP70N
70
50
100 (CMOS) 32-pin PLCC
10K
N
W49F002UP90N
90
50
100 (CMOS) 32-pin PLCC
10K
N
W49F002UP12N
120
50
100 (CMOS) 32-pin PLCC
10K
N
W49F002UQ70N
70
50
100 (CMOS) 32-pin STSOP (8 mm × 14 mm)
10K
N
W49F002UQ90N
90
50
100 (CMOS) 32-pin STSOP (8 mm × 14 mm)
10K
N
W49F002UQ12N
120
50
100 (CMOS) 32-pin STSOP (8 mm × 14 mm)
10K
N
Notes:
1. Winbond reserves the right to make changes to its products without prior notice.
2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in
applications where personal injury might occur as a consequence of product failure.
3. Winbond offers Top Boot Block device, if any of Bottom Boot Block devices is required, please contact Winbond FAEs.
4. In Hardware SID read function column: Y = with SID read function; N = without SID read function.
- 23 -
Publication Release Date: February 21, 2002
Revision A6
W49F002U
HOW TO READ THE TOP MARKING
Example: The top marking of 48-pin TSOP W49F002UT70B
W49F002UT70B
2138977A-A12
149OBSA
st
1 line: winbond logo
nd
2 line: the part number: W49F002UT70B
rd
3 line: the lot number
th
4 line: the tracking code: 149 O B SA
149: Packages made in ’01, wee k 49
O: Assembly house ID: A means ASE, O means OSE, ...etc.
B: IC revision; A means version A, B means version B, ...etc.
SA: Process code
- 24 -
W49F002U
PACKAGE DIMENSIONS
32-pin P-DIP
Dimension in inches
Symbol
A
A1
A2
B
B1
c
D
E
E1
e1
L
D
17
32
E1
16
E
A1
L
Base Plane
Seating Plane
B
e1
a
0.155
0.160
3.81
3.94
4.06
0.016
0.018
0.022
0.41
0.46
0.56
0.048
0.050
0.054
1.22
1.27
0.20
0.010
0.014
1.650
1.660
0.600
0.610
0.590
1.37
0.25
0.36
41.91
42.16
14.99
15.24
15.49
0.545
0.550
0.555
13.84
13.97
14.10
0.090
0.100
0.110
2.29
2.54
2.79
0.120
0.130
0.140
3.05
3.30
3.56
15
0
0.670
16.00
16.51
17.02
0
0.630 0.650
15
0.085
2.16
1.Dimensions D Max. & S include mold flash or
tie bar burrs.
2.Dimension E1 does not include interlead flash.
3.Dimensions D & E1
. include mold mismatch and
are determined at the mold parting line.
4.Dimension B1 does not include dambar
protrusion/intrusion.
5.Controlling dimension: Inches
6.General appearance spec. should be based on
final visual inspection spec.
c
A A2
0.25
0.150
0.008
eA
S
Notes:
S
5.33
0.210
0.010
a
1
Dimension in mm
Min. Nom. Max. Min. Nom. Max.
eA
B1
32-pin PLCC
Symbol
HE
E
4
1
32
30
5
29
GD
D HD
A
A1
A2
b1
b
c
D
E
e
GD
GE
HD
HE
L
y
θ
Dimension in Inches
Min.
Nom.
Max.
Dimension in mm
Min.
Nom.
Max.
3.56
0.140
0.50
0.020
0.105
0.110
0.115
2.67
2.80
2.93
0.026
0.028
0.032
0.66
0.71
0.81
0.016
0.018
0.022
0.41
0.46
0.56
0.008
0.010
0.014
0.20
0.25
0.35
0.547
0.550
0.553
13.89
13.97
14.05
11.35
11.43
11.51
0.447
0.450
0.453
0.044
0.050
0.056
1.12
1.27
1.42
0.490
0.530
12.45
0.430
9.91
12.9
5
10.41
13.46
0.390
0.51
0
0.410
0.585
0.590
0.595
14.86
14.99
15.11
0.485
0.49
0
0.090
0.495
12.32
12.45
12.57
0.095
1.91
2.29
2.41
0.075
0.004
0°
10°
10.92
0.10
0°
10°
21
13
Notes:
14
1. Dimensions D & E do not include interlead flash.
2. Dimension b1 does not include dambar protrusion/intrusion.
3. Controlling dimension: Inches
4. General appearance spec. should be based on final
visual inspection sepc.
c
20
L
A2
θ
e
b
b1
Seating Plane
GE
A
A1
y
- 25 -
Publication Release Date: February 21, 2002
Revision A6
W49F002U
Package Dimensions, continued
32-pin STSOP (8 x 14 mm)
HD
D
Dimension in Inches Dimension in mm
c
Symbol
Min.
e
A
A1
A2
b
c
D
E
HD
e
L
L1
Y
θ
E
b
£c
A1
A2
A
L
Y
Nom. Max.
Min. Nom. Max.
0.047
0.002
1.20
0.006
0.05
0.15
0.035
0.040
0.041
0.95
1.00
0.007
0.009
0.010
0.17
0.22
0.27
0.004
-----
0.008
0.10
-----
0.21
0.488
12.40
0.315
8.00
0.551
14.00
0.020
0.020
0.024
0.50
0.028
0.50
0.031
0.000
0
3
1.05
0.60
0.70
0.80
0.004
0.00
5
0
0.10
3
5
L1
32-pin TSOP (8 x 20 mm)
HD
Dimension in Inches
Dimension in mm
Symbol
D
A
c
A1
M
e
E
Min.
Nom.
__
__
0.002
__
Max.
0.047
Min.
__
0.006
0.05
Nom.
__
__
Max.
1.20
0.15
A2
0.037
0.039
0.041
0.95
1.00
1.05
b
0.007
0.008
0.009
0.17
0.20
0.23
c
0.005
0.006
0.007
0.12
0.15
0.17
D
0.720
0.724
0.728
18.30
18.40
18.50
E
0.311
0.315
0.319
7.90
8.00
8.10
HD
0.780
0.787
0.795
19.80
20.00
20.20
0.10(0.004)
b
__
e
L
L
A
A2
θ
L
A1
L1
0.016
__
1
Y
0.000
θ
1
0.020
0.020
0.031
__
3
__
__
0.024
0.40
__
__
0.004
0.00
5
1
Y
Note:
Controlling dimension: Millimeters
- 26 -
0.50
0.50
0.80
__
3
__
0.60
__
0.10
5
W49F002U
VERSION HISTORY
VERSION
DATE
PAGE
A1
Nov. 1999
-
A2
Apr. 2000
1, 13 − 15, 20
14
DESCRIPTION
Renamed from W49F002/B/U/N
Add the 120 nS bin
Change Tbp(typ.) from 10 µS to 35 µS
Change Tec (max.) from 1 Sec to 0.2 Sec
A3
Dec. 2000
All
Modify some function description
3, 9, 25
Add in Hardware SID read note
1, 25, 27
Add in 32-pin TSOP (8 mm x 14 mm) package
A4
Jan. 2001
All
A5
Aug. 13, 2001
16,22
A6
Feb. 21, 2002
1, 25, 28
Typo correction
Add Reset Timing Parameters and Diagram
Rename STOP (8 x 14 mm) as STSOP (8 x 14 mm)
4
Modify Low VDD Write Inhibit description
13
Add in Software Product Identification and Boot
Block Lockout Detection Acquisition Flow
14
Add in Boot Block Lockout Enable Acquisition Flow
24
Add HOW TO READ THE TOP MARKING
Headquarters
Winbond Electronics Corporation America
Winbond Electronics (Shanghai) Ltd.
No. 4, Creation Rd. III,
Science-Based Industrial Park,
Hsinchu, Taiwan
TEL: 886-3-5770066
FAX: 886-3-5665577
http://www.winbond.com.tw/
2727 North First Street, San Jose,
CA 95134, U.S.A.
TEL: 1-408-9436666
FAX: 1-408-5441798
27F, 2299 Yan An W. Rd. Shanghai,
200336 China
TEL: 86-21-62365999
FAX: 86-21-62365998
Taipei Office
Winbond Electronics Corporation Japan
Winbond Electronics (H.K.) Ltd.
9F, No.480, Rueiguang Rd.,
Neihu Chiu, Taipei, 114,
Taiwan, R.O.C.
TEL: 886-2-8177-7168
FAX: 886-2-8751-3579
7F Daini-ueno BLDG, 3-7-18
Shinyokohama Kohoku-ku,
Yokohama, 222-0033
TEL: 81-45-4781881
FAX: 81-45-4781800
Unit 9-15, 22F, Millennium City,
No. 378 Kwun Tong Rd.,
Kowloon, Hong Kong
TEL: 852-27513100
FAX: 852-27552064
Please note that all data and specifications are subject to change without notice.
All the trade marks of products and companies mentioned in this data sheet belong to their respective owners.
- 27 -
Publication Release Date: February 21, 2002
Revision A6
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