BCR20KM-12L(A) Datasheet

BCR20KM-12L(A) Datasheet
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April 1st, 2010
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BCR20KM-12L
Triac
Medium Power Use
REJ03G0329-0200
Rev.2.00
Nov.09.2004
Features
•
•
•
•
• Insulated Type
• Planar Passivation Type
• UL Recognized : Yellow Card No. E223904
File No. E80271
IT (RMS) : 20 A
VDRM : 600 V
IFGTI, IRGTI, IRGT : 30 mA (20 mA)Note5
Viso : 2000 V
Outline
TO-220FN
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Vacuum cleaner, electric heater, light dimmer, copying machine, and other general controlling devices
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Rev.2.00,
Nov.09.2004,
page 1 of 6
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
BCR20KM-12L
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
20
Unit
A
Surge on-state current
ITSM
200
A
I2t
167
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
– 40 to +125
– 40 to +125
2.0
2000
W
W
V
A
°C
°C
g
V
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.5
Unit
mA
V
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 85°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Test conditions
Tj = 125°C, VDRM applied
Tc = 25°C, ITM = 30 A,
Instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
VFGTΙ
VRGTΙ
VRGTΙΙΙ
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate trigger currentNote2
Ι
ΙΙ
ΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
—
—
—
—
—
—
30Note5
30Note5
30Note5
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
VGD
Rth (j-c)
0.2
—
—
—
—
2.0
V
°C/W
Gate non-trigger voltage
Thermal resistance
Tj = 125°C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
10
—
—
V/µs
Tj = 125°C
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivity (IGT ≤ 20 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = –10 A/ms
3. Peak off-state voltage
VD = 400 V
Rev.2.00,
Nov.09.2004,
page 2 of 6
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR20KM-12L
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
103
On-State Current (A)
3
2
102
7
5
Tj = 125°C
3
2
101
7
5
Tj = 25°C
3
2
Surge On-State Current (A)
240
7
5
7
5
VGT = 1.5V
PG(AV) =
0.5W
IGM =
2A
100
IFGT I,
IRGT I, IRGT III
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
PGM = 5W
3
5 7 101
2
3
5 7 102
103
Typical Example
7
5
3
2
102
IFGT I
7
5
3
2
IRGT I
IRGT III
101
–60 –40 –20 0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
4
3
2
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Nov.09.2004,
page 3 of 6
Transient Thermal Impedance (°C/W)
Gate Voltage (V)
VGM = 10V
10–1 1
10 2 3 5 7102 2 3 5 7 103 2 3 5 7 104
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
2
Gate Trigger Current vs.
Junction Temperature
VGD = 0.2V
Rev.2.00,
40
Gate Characteristics (I, II and III)
101
3
2
80
Conduction Time (Cycles at 60Hz)
7
5
7
5
120
On-State Voltage (V)
102
3
2
160
0
100
100
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
3
2
200
102 2 3 5 7103 2 3 5 7 104 2 3
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10–1 2 3 5 7100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
BCR20KM-12L
Allowable Case Temperature vs.
RMS On-State Current
Maximum On-State Power Dissipation
160
20
10
0
5
10
Ambient Temperature (°C)
20
25
30
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
5
10
15
20
25
30
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
All fins are black painted
aluminum and greased
Curves apply regardless
of conduction angle
Resistive, inductive loads
Natural convection
140
120
100
160 × 160 × t2.3
80
100 × 100 × t2.3
60
40
60 × 60 × t2.3
20
0
Curves apply regardless
140 of conduction angle
RMS On-State Current (A)
160
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
15
0
5
10
15
20
25
160
Ambient Temperature (°C)
0
Rev.2.00,
Case Temperature (°C)
30 360° Conduction
Resistive,
inductive loads
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
30
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
105
Typical Example
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Nov.09.2004,
page 4 of 6
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
On-State Power Dissipation (W)
40
103
7
5
4
3
Typical Example
2
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Latching Current vs.
Junction Temperature
103
Distribution
T2+, G–
Typical Example
3
2
102
7
5
3
2
101
7
5
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
3 T2+, G+
2 T2–, G– Typical Example
100
–60 –40 –20 0 20 40 60 80 100 120 140
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Commutation Characteristics
140
Typical Example
Tj = 125°C
120
III Quadrant
100
80
60
I Quadrant
40
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7104
102
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Latching Current (mA)
7
5
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
BCR20KM-12L
IT
3
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
103
Typical Example
7
5
3
2
IRGT I
IFGT I
7
5
III Quadrant
3
2
I Quadrant
100
7
3
5
7 101
6Ω
A
2
3
5 7 102
Nov.09.2004,
page 5 of 6
V
V
330Ω
Test Procedure II
A
6V
5 7 101
7 102
A
6V
330Ω
2
3
5
6Ω
6Ω
2
3
Gate Trigger Characteristics Test Circuits
3
101 0
10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Test Procedure I
7
5
Gate Current Pulse Width (µs)
Rev.2.00,
Time
Minimum
Characteristics
Value
V
102
(di/dt)c
τ
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
101
6V
IRGT III
VD
2
Rate of Rise of Off-State Voltage (V/µs)
Gate Trigger Current vs.
Gate Current Pulse Width
Time
Main Voltage
7
(dv/dt)c
5 Main Current
330Ω
Test Procedure III
BCR20KM-12L
Package Dimensions
TO-220FN
EIAJ Package Code

JEDEC Code

Mass (g) (reference value)
Lead Material
2.0
Cu alloy
2.8 ± 0.2
6.5 ± 0.3
3 ± 0.3
φ 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
4.5 ± 0.2
2.54 ± 0.25
2.6 ± 0.2
Symbol
Dimension in Millimeters
Min
Typ
Max
A
A1
A2
b
D
E
e
x
y
y1
ZD
ZE
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form
Standard packing
Quantity
Standard order code
Straight type
Plastic Magazine (Tube)
50 Type name +A
Lead form
Plastic Magazine (Tube)
50 Type name +A – Lead forming code
Note : Please confirm the specification about the shipping in detail.
Rev.2.00,
Nov.09.2004,
page 6 of 6
Standard order
code example
BCR20KM-12LA
BCR20KM-12LA-A8
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
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© 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .2.0
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