BLF645,112 datasheet

BLF645,112 datasheet
BLF645
Broadband power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 100 W LDMOS RF power push-pull transistor for broadcast transmitter and industrial
applications. The transistor is suitable for the frequency range HF to 1400 MHz. The
excellent ruggedness and broadband performance of this device makes it ideal for digital
applications.
Table 1.
Typical performance
RF performance at Th = 25 C in a common source test circuit.
VDS
PL
PL(PEP)
Gp
D
Mode of operation
f
IMD
(MHz)
(V)
(W)
(W)
(dB)
(%)
(dBc)
CW, class-AB
1300
32
100
-
18
56
-
2-tone, class-AB
1300
32
-
100
18
45
32
1.2 Features
 CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent
drain current IDq = 0.9 A for total device:
 Average output power = 100 W
 Power gain = 18 dB
 Drain efficiency = 56 %
 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent
drain current IDq = 0.9 A for total device:
 Peak envelope load power = 100 W
 Power gain = 18 dB
 Drain efficiency = 45 %
 Intermodulation distortion = 32 dBc
 Integrated ESD protection
 Excellent ruggedness
 High power gain
 High efficiency
 Excellent reliability
 Easy power control
 Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
BLF645
Broadband power LDMOS transistor
1.3 Applications
 Communication transmitter applications in the HF to 1400 MHz frequency range
 Industrial applications in the HF to 1400 MHz frequency range
2. Pinning information
Table 2.
Pinning
Pin
Description
1
drain 1
2
drain 2
3
gate 1
4
gate2
5
source
Simplified outline
1
Graphic symbol
1
2
5
3
3
4
5
4
[1]
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
BLF645
Package
Name
Description
Version
-
flanged balanced LDMOST ceramic package; 2
mounting holes; 4 leads
SOT540A
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
VDS
Conditions
Min
Max
Unit
drain-source voltage
-
65
V
VGS
gate-source voltage
0.5
+11
V
ID
drain current
-
32
A
Tstg
storage temperature
65
+150
C
Tj
junction temperature
-
200
C
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Rth(j-c)
[1]
BLF645#2
Product data sheet
Conditions
thermal resistance from junction to case
Typ
Tcase = 80 C; PL = 100 W
[1]
Unit
0.67 K/W
Rth(j-c) is measured under RF conditions.
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Rev. 2 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
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BLF645
Broadband power LDMOS transistor
6. Characteristics
Table 6.
Characteristics per section
Tj = 25 C per section; unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage
Min
Typ
Max Unit
VGS = 0 V; ID = 0.9 mA
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 32 V; ID = 90 mA
1.4
1.9
2.4
V
VGSq
gate-source quiescent voltage
VDS = 32 V; IDq = 450 mA
1.5
2.0
2.5
V
IDSS
drain leakage current
VGS = 0 V; VDS = 32 V
-
-
1.4
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
14
-
A
IGSS
gate leakage current
VGS = 10 V; VDS = 0 V
-
-
120
nA
gfs
forward transconductance
VDS = 10 V; ID = 4.5 A
-
6.4
-
S
RDS(on)
drain-source on-state resistance
VGS = VGS(th) + 3.75 V;
ID = 3.15 A
-
220
-
m
Ciss
input capacitance
VGS = 0 V; VDS = 32 V;
f = 1 MHz
-
69
-
pF
Coss
output capacitance
VGS = 0 V; VDS = 32 V;
f = 1 MHz
-
25
-
pF
Crs
feedback capacitance
VGS = 0 V; VDS = 32 V;
f = 1 MHz
-
1.2
-
pF
7. Application information
Table 7.
RF performance in a common-source class-AB circuit
Th = 25 C; IDq = 0.9 A for total device.
Mode of operation
CW, class-AB
f
VDS
PL
Gp
D
(MHz)
(V)
(W)
(dB)
(%)
1300
32
100
> 16.5
> 53
7.1 Ruggedness in class-AB operation
The BLF645 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1
through all phases under the following conditions: VDS = 32 V; f = 1300 MHz at rated load
power.
BLF645#2
Product data sheet
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Rev. 2 — 1 September 2015
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BLF645
Broadband power LDMOS transistor
8. Test information
8.1 RF performance
The following figures are measured in a class-AB production test circuit.
8.1.1 1-Tone CW
001aal361
20
Gp
(dB)
Gp
19
70
ηD
(%)
Gp
(dB)
60
001aal362
20
19
18
18
(7)
(6)
(5)
(4)
(3)
(2)
(1)
50
ηD
17
17
40
16
30
16
15
15
20
14
10
13
0
40
80
14
13
12
0
160
120
0
40
80
120
160
PL (W)
PL (W)
VDS = 32 V; IDq = 900 mA (for total device);
f = 1300 MHz.
VDS = 32 V; f = 1300 MHz.
(1) IDq = 200 mA (for total device).
(2) IDq = 400 mA (for total device).
(3) IDq = 600 mA (for total device).
(4) IDq = 900 mA (for total device).
(5) IDq = 1200 mA (for total device).
(6) IDq = 1400 mA (for total device).
(7) IDq = 1800 mA (for total device).
Fig 1.
Power gain and drain efficiency as function of
load power; typical values
BLF645#2
Product data sheet
Fig 2.
Power gain as a function of load power;
typical values
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Rev. 2 — 1 September 2015
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BLF645
Broadband power LDMOS transistor
001aal363
55
PL
(dBm)
ideal PL
53
(2)
(1)
51
PL
49
47
45
27
29
31
33
35
37
Pi (dBm)
VDS = 32 V; IDq = 900 mA (for total device); f = 1300 MHz.
(1) PL(1dB) = 50.5 dBm (112 W).
(2) PL(3dB) = 51.5 dBm (141 W).
Fig 3.
BLF645#2
Product data sheet
Load power as function of input power; typical values
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BLF645
Broadband power LDMOS transistor
8.1.2 2-Tone CW
001aal364
20
ηD
(%)
Gp
(dB)
19
001aal365
0
60
IMD3
(dBc)
50
−10
40
−20
30
−30
Gp
18
ηD
17
16
20
−40
15
10
−50
14
0
40
80
0
120
160
PL(PEP) (W)
VDS = 32 V; IDq = 900 mA (for total device);
f = 1300 MHz; carrier spacing = 100 kHz.
−60
(1)
(2)
(3)
(4)
(5)
(6)
(7)
0
40
80
120
160
200
PL(PEP) (W)
VDS = 32 V; f = 1300 MHz; carrier spacing = 100 kHz.
(1) IDq = 200 mA (for total device).
(2) IDq = 400 mA (for total device).
(3) IDq = 600 mA (for total device).
(4) IDq = 900 mA (for total device).
(5) IDq = 1200 mA (for total device).
(6) IDq = 1400 mA (for total device).
(7) IDq = 1800 mA (for total device).
Fig 4.
Power gain and drain efficiency as function of
peak envelope load power; typical values
BLF645#2
Product data sheet
Fig 5.
Third order intermodulation distortion as a
function of peak envelope load power; typical
values
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Rev. 2 — 1 September 2015
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BLF645
Broadband power LDMOS transistor
8.2 Reliability
001aal366
105
Years
(1)
(2)
(3)
(4)
(5)
(6)
104
103
102
(7)
(8)
(9)
(10)
(11)
10
1
0
4
8
12
16
20
IDS(DC) (A)
TTF (0.1 % failure fraction).
(1) Tj = 100 C.
(2) Tj = 110 C.
(3) Tj = 120 C.
(4) Tj = 130 C.
(5) Tj = 140 C.
(6) Tj = 150 C.
(7) Tj = 160 C.
(8) Tj = 170 C.
(9) Tj = 180 C.
(10) Tj = 190 C.
(11) Tj = 200 C.
Fig 6.
BLF645#2
Product data sheet
BLF645 electromigration (IDS(DC), total device)
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BLF645
Broadband power LDMOS transistor
8.3 Test circuit
VDD
C15
VGG
C13
C4
R3
T2
C2
IN
50 Ω C1
R1
L8
L6
C6
C8
L3
L4
C9
L1
L10
L12
C10
L14
OUT
50 Ω
C17
L13
L5
C7
R2
R5
C11
L9
L7
L11
C12
C3
R4
L2
R6
T1
C5
C14
VGG
C16
VDD
001aal367
See Table 8 for a list of components.
Fig 7.
Class-AB common-source production test circuit
+
C4
C15
C13
R3
T2
R5
C2
C1
C6
R1
C9
C8
C3
L1
C11
C17
C10
R2
C7
C12
L2
R6
T1
C14
R4
C5
BLF645 INPUT REVZ
BLF645 OUTPUT REVZ
+
C16
001aal368
See Table 8 for a list of components.
Fig 8.
Component layout for class-AB production test circuit
BLF645#2
Product data sheet
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Rev. 2 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
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BLF645
Broadband power LDMOS transistor
Table 8.
List of components
For test circuit, see Figure 7 and Figure 8.
Component
Description
Value
C1
multilayer ceramic chip capacitor
47 pF
[1]
C6, C7, C11, C12, multilayer ceramic chip capacitor
C17
27 pF
[2]
C2, C3
Remarks
multilayer ceramic chip capacitor
100 nF
Murata X7R or equivalent
C4, C5, C13, C14 multilayer ceramic chip capacitor
4.7 F
TDK C4532X7R1E475MT020U or
capacitor of same quality.
C8
multilayer ceramic chip capacitor
1.5 pF
[2]
C9
multilayer ceramic chip capacitor
3.3 pF
[2]
C10
multilayer ceramic chip capacitor
6.2 pF
[3]
C15, C16
electrolytic capacitor
220 F
L1, L2
4 turns, 0.8 mm enameled copper wire
D = 3.5 mm;
length = 4 mm
L3
microstrip
-
[4]
(W  L) 1.67 mm  19.17 mm
-
[4]
(W  L) 1.9 mm  23.7 mm
(W  L) 9.6 mm  17.3 mm
L4, L5
microstrip
TDK C4532X7R1E475MT020U or
capacitor of same quality.
L6, L7
microstrip
-
[4]
L8, L9
microstrip
-
[4]
(W  L) 9 mm 12 mm
L10, L11
microstrip
-
[4]
(W  L) 8.5 mm  31.0 mm
-
[4]
(W  L) 4.52 mm  5.0 mm
[4]
L12, L13
microstrip
(W  L) 1.67 mm  21.67 mm
L14
microstrip
-
R1, R2
SMD resistor
11 
1206
R3, R4
SMD resistor
1 k
1206
R5, R6
SMD resistor
12 
1206
T1, T2
semi rigid coax
Z = 50 ;
length = 34 mm
[1]
American technical ceramics type 100A or capacitor of same quality.
[2]
American technical ceramics type 100B or capacitor of same quality.
[3]
American technical ceramics type 180R or capacitor of same quality.
[4]
Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; height = 0.79 mm; Cu (top/bottom metallization);
thickness copper plating = 35 m.
BLF645#2
Product data sheet
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Rev. 2 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
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BLF645
Broadband power LDMOS transistor
9. Package outline
Flanged balanced ceramic package; 2 mounting holes; 4 leads
SOT540A
D
A
F
D1
U1
B
q
C
w2 M C M
H1
1
H
c
2
E1
p
U2
5
3
A
E
w1 M A M B M
4
w3 M
b
Q
e
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
mm
5.77
5.00
8.51
8.26
0.15
0.10
inches
D
D1
e
E
E1
22.05 22.05
10.26 10.31
10.21
21.64 21.64
10.06 10.01
H
F
1.78
1.52
p
Q
q
U1
U2
w1
w2
w3
3.38
3.12
2.72
2.46
27.94
34.16
33.91
9.91
9.65
0.25
0.51
0.25
H1
15.75 18.72
14.73 18.47
0.404 0.406 0.070 0.620 0.737 0.133 0.107
0.227 0.335 0.006 0.868 0.868
1.345 0.390
1.100
0.010 0.020 0.010
0.402
0.396 0.394 0.060 0.580 0.727 0.123 0.097
1.335 0.380
0.197 0.325 0.004 0.852 0.852
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
99-12-28
12-05-02
SOT540A
Fig 9. Package outline SOT540A
BLF645#2
Product data sheet
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Rev. 2 — 1 September 2015
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BLF645
Broadband power LDMOS transistor
10. Abbreviations
Table 9.
Abbreviations
Acronym
Description
CW
Continuous Waveform
DC
Direct Current
D-MOS
Diffusion Metal-Oxide Semiconductor
ESD
ElectroStatic Discharge
HF
High Frequency
LDMOS
Laterally Diffused Metal Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
RF
Radio Frequency
SMD
Surface-Mount Device
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF645#2
20150901
Product data sheet
-
BLF645_1
Modifications:
BLF645_1
BLF645#2
Product data sheet
•
The format of this document has been redesigned to comply with the new identity guidelines of
Ampleon.
•
Legal texts have been adapted to the new company name where appropriate.
20100127
Product data sheet
-
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
-
© Ampleon The Netherlands B.V. 2015. All rights reserved.
11 of 14
BLF645
Broadband power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLF645#2
Product data sheet
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
12 of 14
BLF645
Broadband power LDMOS transistor
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
13. Contact information
For more information, please visit:
http://www.ampleon.com
BLF645#2
Product data sheet
For sales office addresses, please visit:
http://www.ampleon.com/sales
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
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BLF645
Broadband power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
8
8.1
8.1.1
8.1.2
8.2
8.3
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 4
RF performance . . . . . . . . . . . . . . . . . . . . . . . . 4
1-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2-Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon The Netherlands B.V. 2015.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLF645#2
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