BUZ 80A

BUZ 80A
BUZ 80A
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
Pin 1
Pin 2
G
Pin 3
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 80A
800 V
3A
3Ω
TO-220 AB
C67078-A1309-A3
Maximum Ratings
Parameter
Symbol
Drain source voltage
VDS
VDGR
Drain-gate voltage
RGS = 20 kΩ
Values
Unit
800
V
800
ID
Continuous drain current
TC = 50 °C
A
3
IDpuls
Pulsed drain current
TC = 25 °C
12
Gate source voltage
VGS
Power dissipation
Ptot
TC = 25 °C
± 20
V
W
75
Operating temperature
Tj
-55 ... ...+ 150 °C
Storage temperature
Tstg
-55 ... ...+ 150
Thermal resistance, chip case
RthJC
≤ 1.67
Thermal resistance, chip to ambient
RthJA
75
DIN humidity category, DIN 40 040
E
IEC climatic category, DIN IEC 68-1
Semiconductor Group
K/W
55 / 150 / 56
1
07/96
BUZ 80A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Drain- source breakdown voltage
V(BR)DSS
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
800
-
-
VGS(th)
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
V
2.1
3
4
IDSS
µA
VDS = 800 V, VGS = 0 V, Tj = 25 °C
-
20
250
VDS = 800 V, VGS = 0 V, Tj = 125 °C
-
100
1000
Gate-source leakage current
IGSS
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
-
10
100
Ω
RDS(on)
VGS = 10 V, ID = 1.5 A
Semiconductor Group
nA
-
2
2.7
3
07/96
BUZ 80A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Dynamic Characteristics
Transconductance
gfs
VDS≥ 2 * ID * RDS(on)max, ID = 1.5 A
Input capacitance
1
pF
-
1600
2100
-
90
150
-
30
55
Crss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
-
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
1.8
Ciss
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
S
td(on)
ns
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
Rise time
-
30
45
-
40
60
-
110
140
-
60
80
tr
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
Turn-off delay time
td(off)
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
Fall time
tf
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50 Ω
Semiconductor Group
3
07/96
BUZ 80A
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Reverse Diode
Inverse diode continuous forward current IS
TC = 25 °C
Inverse diode direct current,pulsed
-
-
12
V
1.05
1.3
trr
µs
-
1.8
-
Qrr
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Semiconductor Group
3
-
VR = 100 V, IF=lS, diF/dt = 100 A/µs
Reverse recovery charge
-
VSD
VGS = 0 V, IF = 6 A
Reverse recovery time
-
ISM
TC = 25 °C
Inverse diode forward voltage
A
µC
-
4
12
-
07/96
BUZ 80A
Drain current
ID = ƒ(TC)
parameter: VGS ≥ 10 V
Power dissipation
Ptot = ƒ(TC)
Ptot
80
3.2
W
A
ID
60
2.4
50
2.0
40
1.6
30
1.2
20
0.8
10
0.4
0
0
0.0
20
40
60
80
100
120
°C
0
160
20
40
60
80
100
120
TC
Safe operating area
ID = ƒ(VDS)
parameter: D = 0.01, TC = 25°C
160
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
10 2
10 1
A
ID
°C
TC
K/W
t = 670.0ns
p
10 1
ZthJC
1 µs
10 0
10 µs
V
100 µs
10 -1
DS
(o
n)
10 0
=
DS
/
D
I
D = 0.50
R
1 ms
0.20
0.10
10 ms
10 -1
0.05
10 -2
DC
0.02
single pulse
0.01
10 -2
0
10
10
1
10
2
V 10
10 -3
-7
10
3
VDS
Semiconductor Group
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
tp
5
07/96
0
BUZ 80A
Typ. output characteristics
ID = ƒ(VDS)
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
parameter: tp = 80 µs
7.0
10
Ptot = 75W
A
l
kj i h
Ω
g
6.0
ID
VGS [V]
4.0
f a
5.5
5.0
e
4.5
4.0
3.5
d
3.0
2.5
c
2.0
b
4.5
c
5.0
d
5.5
e
6.0
f
6.5
g
7.0
h
7.5
i
8.0
j
9.0
k
10.0
l
20.0
RDS (on)
20
25
30
35
f
4
h
g
j i
k
3
2
a
15
e
5
1
10
d
8
1.0
5
c
6
b
0
b
7
1.5
0.5
0.0
a
V
VGS [V] =
0
0.0
45
a
4.5
4.0
b
5.0
1.0
c
5.5
d
6.0
e
f
6.5 7.0
2.0
3.0
g
7.5
h
i
j
k
8.0 9.0 10.0 20.0
4.0
5.0
VDS
A
6.5
ID
Typ. transfer characteristics ID = f (VGS)
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs
VDS≥2 x ID x RDS(on)max
parameter: tp = 80 µs,
VDS≥2 x ID x RDS(on)max
5.0
3.0
A
ID
S
4.0
gfs
3.5
2.0
3.0
2.5
1.5
2.0
1.0
1.5
1.0
0.5
0.5
0.0
0
1
2
3
4
5
6
7
8
V
10
VGS
Semiconductor Group
6
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
A
ID
07/96
4.0
BUZ 80A
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
Drain-source on-resistance
RDS (on) = ƒ(Tj )
parameter: ID = 1.5 A, VGS = 10 V
4.6
14
Ω
V
98%
4.0
12
VGS(th)
RDS (on) 11
10
3.6
typ
3.2
9
2.8
8
2.4
7
2%
2.0
6
98%
typ
5
1.6
4
1.2
3
0.8
2
0.4
1
0
-60
-20
20
60
100
°C
0.0
-60
160
-20
20
60
100
°C
Tj
Typ. capacitances
160
Tj
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter: Tj , tp = 80 µs
C = f (VDS)
parameter:VGS = 0V, f = 1MHz
10 1
10 2
nF
A
IF
C
Ciss
10 0
10 1
10 -1
10 0
Coss
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Crss
10 -2
0
5
10
Semiconductor Group
15
20
25
30
V
VDS
Tj = 150 °C (98%)
40
10 -1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
VSD
7
07/96
3.0
BUZ 80A
Typ. gate charge
VGS = ƒ(QGate)
parameter: ID puls = 5 A
Drain-source breakdown voltage
V(BR)DSS = ƒ(Tj )
16
960
V
V
920
VGS
V(BR)DSS
900
880
12
10
860
0,2 VDS max
8
840
820
0,8 VDS max
6
800
4
780
760
2
740
720
-60
0
-20
20
60
100
°C
160
Tj
Semiconductor Group
8
0
10
20
30
40
50
nC
Q Gate
07/96
65
BUZ 80A
Package Outlines
TO-220 AB
Dimension in mm
Semiconductor Group
9
07/96
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