L 149

L 149
L149
4A LINEAR DRIVER
■
■
■
■
■
■
■
HIGH OUTPUT CURRENT (4A peak)
HIGH CURRENT GAIN (10.000 typ.)
OPERATION UP TO ± 20 V
THERMAL PROTECTION
SHORT CIRCUIT PROTECTION
OPERATION WITHIN SOA
HIGH SLEW-RATE (30 V/ms)
DESCRIPTION
Pentawatt V
The L149 is a general purpose power booster in
Pentawatt ® package consisting of a quasi-complentary darlington output stage with the associated biasing system an inhibit facility.
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The device is particularly suited for use with an operational amplifier inside a closed loop configuration to increase output current.
ORDERING NUMBER: L149V
TEST CIRCUIT
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L149
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VS
Supply Voltage
Vi
Input Voltage
Value
Unit
±20
V
V
s
V5 - V4
Upper Power Transistor VCE
40
V
V4 - V3
Lower Power Transistor VCE
40
V
3
A
IO
DC Output Current
IO
Peak Output Current (internally limited)
VINH
Input Inhibit Voltage
Ptot
Total Power Dissipation at Tcase = 75 °C)
4
A
- Vs + 5
V
- Vs - 1.5
V
25
W
PIN CONNECTION (Top view)
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SCHEMATIC DIAGRAM
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THERMAL DATA
Symbol
Rth-j-case
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Parameter
Thermal resistance junction-case
max
Value
Unit
3
°C/W
L149
ELECTRICAL CHARACTERISTCS (Tj = 25 °C, VS = ± 16V)
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Unit
± 20
V
VS
Supply Voltage
Id
Quiescent Drain Current
V S = ± 16V
30
Iin
Input current
V S = ± 16V; Vi = 0V
200
hFE
DC current drain
VS = ± 16V; IO = 3A
GV
Voltage gain
V S = ± 16V; IO = 1.5A
Saturation voltage (for each
transistor)
IO = 3A
3.5
V
VOS
Input offset voltage
V S = ± 16V
0.3
V
VINH
Inhibit input voltage (pins 1-3)
ON condition
± 0.3
V
VCEsat
6000
10000
-
1
-
uc
2.0
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Slew rate
B
30
Power bandwidth
V O = ± 10V, d = 1%, R L = 8Ω
P
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let
APPLICATION INFORMATION
µA
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V
Inhibit input resistance
SR
400
± 1.8
OFF condition
RINH
mA
200
KΩ
V/µs
KHZ
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Figure 1. High slew-rate power operational amplifier (SR = 13V/µs)
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L149
Figure 2. Maximum saturation voltage vs.
output current.
Figure 5. Distorsion vs. output power (f = 1KHz).
Figure 3. Current limiting characteristics.
Figure 6. Distorsion vs. output power (f = 1KHz).
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Figure 4. Supply voltage rejection vs.
frequency.
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Figure 7. Output power vs. supply voltage.
L149
DIM.
A
C
D
D1
E
E1
F
F1
G
G1
H2
H3
L
L1
L2
L3
L4
L5
L6
L7
L9
L10
M
M1
V4
V5
Dia
MIN.
mm
TYP.
2.4
1.2
0.35
0.76
0.8
1.0
3.2
6.6
3.4
6.8
10.05
17.55
15.55
21.2
22.3
17.85
15.75
21.4
22.5
2.6
15.1
6.0
2.1
4.3
4.23
3.75
4.5
4.0
3.65
inch
TYP.
MAX. MIN.
4.8
1.37
2.8
0.094
1.35 0.047
0.55 0.014
1.19 0.030
1.05 0.031
1.4
0.039
3.6
0.126
7.0
0.260
10.4
10.4 0.396
18.15 0.691
15.95 0.612
21.6 0.831
22.7 0.878
1.29
3.0
0.102
15.8 0.594
6.6
0.236
2.7
0.008
4.8
0.17
4.75 0.167
4.25 0.148
40˚ (typ.)
90˚ (typ.)
3.85 0.144
0.134
0.268
0.703
0.620
0.843
0.886
0.178
0.157
MAX.
0.189
0.054
0.110
0.053
0.022
0.047
0.041
0.055
0.142
0.276
0.409
0.409
0.715
0.628
0.850
0.894
0.051
0.118
0.622
0.260
0.106
0.189
0.187
0.167
L1
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D1
L5
Weight: 2.00gr
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Pentawatt
P V
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let
0.152
L
A
OUTLINE AND
MECHANICAL DATA
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-
E
M1
M
D
V5
L2
H2
L3
F
E
E1
V4
H3
G G1
Dia.
F
F1
L9
L4
L10
L7
L6
H2
V4
RESIN BETWEEN
LEADS
PENTVME
0015981
5/6
L149
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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STMicroelectronics acknowledges the trademarks of all companies referred to in this document.
The ST logo is a registered trademark of STMicroelectronics
© 2003 STMicroelectronics - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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