CR05AM-16 DATASHEET

CR05AM-16 DATASHEET

To our customers,

Old Company Name in Catalogs and Other Documents

On April 1

st

, 2010, NEC Electronics Corporation merged with Renesas Technology

Corporation, and Renesas

Electronics Corporation

took over all the business of both companies.

Therefore, although the old company name remains in this document, it is a valid

Renesas

Electronics document. We appreciate your understanding.

Renesas Electronics website: http://www.renesas.com

April 1

st

, 2010

Renesas Electronics Corporation

Issued by: Renesas Electronics Corporation ( http://www.renesas.com

)

Send any inquiries to http://www.renesas.com/inquiry .

Notice

1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.

2. Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.

No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others.

3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.

4. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information.

5. When exporting the products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas

Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations.

6. Renesas Electronics has used reasonable care in preparing the information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.

7. Renesas Electronics products are classified according to the following three quality grades: “Standard”, “High Quality”, and

“Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc.

“Standard”: Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.

“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support.

“Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.

8. You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges.

9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,

Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a

Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you.

10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS

Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.

11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas

Electronics.

12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries.

(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries.

(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.

CR05AM-16

Thyristor

Low Power Use

Features

I

T (AV)

: 0.3 A

V

DRM

I

GT

: 800 V

: 100

µ

A

Outline

Non-Insulated Type

Glass Passivation Type

TO-92

Applications

Leakage protector, timer, and gas igniter

Maximum Ratings

Parameter

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

DC reverse voltage

Repetitive peak off-state voltage

Note1

Non-repetitive peak off-state voltage

Note1

DC off-state voltage

Note1

3

2

1

Symbol

V

RRM

V

RSM

V

R(DC)

V

DRM

V

DSM

V

D(DC)

2

3

1

1. Cathode

2. Anode

3. Gate

Voltage class

16

800

960

640

800

960

640

REJ03G0356-0100

Rev.1.00

Aug.20.2004

Unit

V

V

V

V

V

V

Rev.1.00, Aug.20.2004, page 1 of 7

CR05AM-16

Parameter

RMS on-state current

Average on-state current

Surge on-state current

I

2 t for fusing

Symbol

I

T (RMS)

I

T (AV)

I

TSM

I

2 t

Ratings

0.47

0.3

10

0.4

Peak gate power dissipation

Average gate power dissipation

Peak gate forward voltage

Peak gate reverse voltage

Peak gate forward current

P

GM

P

G (AV)

V

FGM

V

RGM

I

FGM

0.5

0.1

6

6

0.3

Junction temperature

Storage temperature

Tj

Tstg

– 40 to +110

– 40 to +125

Mass — 0.23

Notes: 1. With gate to cathode resistance R

GK

= 1 k

.

Electrical Characteristics

Parameter

Repetitive peak reverse current

Repetitive peak off-state current

Symbol

I

RRM

I

DRM

On-state voltage V

TM

Gate trigger voltage

Gate non-trigger voltage

Gate trigger current

Holding current

V

GT

V

GD

I

GT

I

H

Thermal resistance R th (j-a)

Notes: 2. I

GT

, V

GT

measurement circuit.

0.2

1

Min.

1.5

Typ.

0.8

100

3

Max.

0.1

0.1

1.8

180

Unit

A

A

A

A

2 s

W

W

V

V

A

°C

°C g Typical value

Conditions

Commercial frequency, sine half wave

180° conduction, Ta = 47°C

60Hz sine half wave 1 full cycle, peak value, non-repetitive

Value corresponding to 1 cycle of half wave 60Hz, surge on-state current

Unit

mA mA

V

Test conditions

Tj = 110°C, V

RRM

applied

Tj = 110°C, V

DRM

applied,

R

GK

= 1 k

Ta = 25°C, I

TM

= 4 A, instantaneous value

V Tj = 25°C, V

D

= 6 V,

I

T

= 0.1 A

Note2

µ

V

A

Tj = 110°C, V

D

= 1/2 V

DRM

,

R

GK

= 1 k

Tj = 25°C, V

D

= 6 V,

I

T

= 0.1 A

Note2 mA Tj = 25°C, V

D

= 12 V,

R

GK

= 1 k

°C/W Junction to ambient

3V

DC

A1

I

GS

I

GT

A3

R

GK

1k

Switch

1

A2

2

V1

V

GT

TUT

60

6V

DC

Switch 1 : I

GT

measurement

Switch 2 : V

GT

measurement

(Inner resistance of voltage meter is about 1k

Ω)

Rev.1.00, Aug.20.2004, page 2 of 7

CR05AM-16

Performance Curves

Maximum On-State Characteristics

10

1

7

5

3

2

10

0

7

5

3

2

10

–1

7

5

3

2

10

–2

0.6

1.0

1.4

Ta = 25°C

1.8

2.2

2.6

3.0

3.4

3.8

On-State Voltage (V)

Gate Characteristics

10

2

7

5

3

2

10

1

7

5

3

2

10

0

7

5

V

FGM

P

= 6V

G(AV)

= 0.1W

P

GM

= 0.5W

V

GT

= 0.8V

(Tj = 25°C)

I

GT

= 100

µA

(Tj = 25°C)

3

2

10

–1

7

5

3

2

V

GD

= 0.2V

I

FGM

= 0.3A

10

–2

5 7

10 –1

2 3 5 7

10 0

2 3 5 7

10 1

2 3 5 7

10 2

2 3 5

Gate Current (mA)

Gate Trigger Voltage vs.

Junction Temperature

1.0

0.9

0.8

0.7

0.6

0.5

Distribution

Typical Example

I

GT

(25°C) = 35

µA

0.4

0.3

0.2

0.1

0

–60 –40 –20 0 20 40 60 80 100 120 140

Junction Temperature (°C)

Rev.1.00, Aug.20.2004, page 3 of 7

Rated Surge On-State Current

10

9

8

7

6

5

4

3

2

1

0

10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2

Conduction Time (Cycles at 60Hz)

Gate Trigger Current vs.

Junction Temperature

10 3

7

5

3

2

10

2

7

5

3

2

10

1

7

5

3

2

10

0

–40 –20 0 20 40

Typical Example

60 80 100 120

Junction Temperature (°C)

Maximum Transient Thermal Impedance

Characteristics (Junction to ambient)

200

10

0

2 3 5 7 10

1

2 3 5 7 10

2

2 3 5 7 10

3

180

160

140

120

100

80

60

40

20

0

10

–3

2 3 5 710

–2

2 3 5 710

–1

2 3 5 7 10

0

Time (s)

CR05AM-16

0.5

Maximum Average Power Dissipation

(Single-Phase Half Wave)

0.4

θ = 30°

60

°

120

90

°

°

180

°

0.3

0.2

0.1

0

0

θ

360°

Resistive, inductive loads

0.3

0.4

0.5

0.1

0.2

Average On-State Current (A)

0.5

0.4

Maximum Average Power Dissipation

(Single-Phase Full Wave)

θ = 30°

60

°

90

°

120

°

180

°

0.3

0.2

0.1

0

0

θ θ

360°

Resistive loads

0.3

0.4

0.5

0.1

0.2

Average On-State Current (A)

0.5

0.4

Maximum Average Power Dissipation

(Rectangular Wave)

θ = 30°

120

°

180

°

60

°

90

°

270

°

DC

0.3

0.2

0.1

0

0

θ

360°

Resistive, inductive loads

0.3

0.4

0.5

0.1

0.2

Average On-State Current (A)

Rev.1.00, Aug.20.2004, page 4 of 7

160

140

120

100

80

60

40

20

0

0

Allowable Ambient Temperature vs.

Average On-State Current

(Single-Phase Half Wave)

θ

360°

Resistive, inductive loads

Natural convection

θ = 30°

90

°

180

60

°

120

°

°

0.1

0.2

0.3

0.4

0.5

Average On-State Current (A)

Allowable Ambient Temperature vs.

Average On-State Current

(Single-Phase Full Wave)

160

140

120

100

80

60

40

20

0

0

θ θ

360°

Resistive loads

Natural convection

θ = 30°

60

°

90

°

120

° 180°

0.1

0.2

0.3

0.4

Average On-State Current (A)

0.5

160

140

120

100

80

60

40

20

0

0

Allowable Ambient Temperature vs.

Average On-State Current

(Rectangular Wave)

Resistive, inductive loads

Natural convection

θ

360°

θ = 30°

60

°

90

°

120

°

180

°

270

°

DC

0.1

0.2

0.3

0.4

0.5

Average On-State Current (A)

CR05AM-16

Breakover Voltage vs.

Junction Temperature

160

Typical Example

140

120

100

80

R

GK

= 1k

60

40

20

0

–40 –20 0 20 40 60 80 100 120

Junction Temperature (°C)

Breakover Voltage vs.

Rate of Rise of Off-State Voltage

200

180

160

140

120

100

80

60

40

20

Tj = 110°C

R

GK

= 1k

Tj = 25°C

0

10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3

Rate of Rise of Off-State Voltage (V/

µs)

500

400

Holding Current vs.

Gate to Cathode Resistance

Typical Example

# 1

# 2

I

GT

(25°C) I

H

(1k

Ω)

10

µA

26

µA

1.0mA

1.1mA

300

# 1

# 2

200

100

V

D

0

10 –2

= 12V, Tj = 25°C

2 3 5 7 10 –1 2 3 5 7 10 0 2 3 5 7 10 1

Gate to Cathode Resistance (k

Ω)

Breakover Voltage vs.

Gate to Cathode Resistance

160

Typical Example

140

120

100

80

60

40

Tj = 110°C

20

0

10

–1

2 3 5 7 10

0

2 3 5 7 10

1

2 3 5 7 10

2

Gate to Cathode Resistance (k

Ω)

Holding Current vs.

Junction Temperature

10 2

7

5

3

2

10 1

7

5

3

2

10 0

7

5

3

2

Distribution

I

R

GK

= 1k

Typical Example

GT

(25°C) = 35

µA

10

–1

–60 –40 –20 0 20 40 60 80 100 120 140

Junction Temperature (°C)

Repetitive Peak Reverse Voltage vs.

Junction Temperature

160

140

120

100

80

60

40

Typical Example

20

0

–40 –20 0 20 40 60 80 100 120

Junction Temperature (°C)

Rev.1.00, Aug.20.2004, page 5 of 7

CR05AM-16

Gate Trigger Current vs.

Gate Current Pulse Width

10

4

7

5

4

3

2

# 1

# 2

10

3

7

5

4

3

2

Tj = 25°C

10

2

10

0

2 3 4 5 7 10

1

Typical Example

# 1

# 2

I

GT

(DC)

16

µA

65

µA

2 3 4 5 7 10

2

Gate Current Pulse Width (

µs)

Rev.1.00, Aug.20.2004, page 6 of 7

CR05AM-16

Package Dimensions

TO-92

EIAJ Package Code

Conforms

JEDEC Code

Conforms

Mass (g) (reference value)

0.23

Lead Material

Cu alloy

φ

5.0 max

4.4

1.25 1.25

Circumscribed circle

φ

0.7

Note 1) The dimensional figures indicate representative values unless

otherwise the tolerance is specified.

Symbol e x y

A

A

1

A

2 b

D

E y

1

ZD

ZE

Dimension in Millimeters

Min Typ Max

Order Code

Lead form Standard packing Quantity Standard order code

Straight type

Lead form

Vinyl sack

Vinyl sack

500 Type name

500 Type name – Lead forming code

Form A8 Taping 2000 Type name – TB

Note : Please confirm the specification about the shipping in detail.

Standard order code example

CR05AM-16

CR05AM-16-A6

CR05AM-16-TB

Rev.1.00, Aug.20.2004, page 7 of 7

Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Keep safety first in your circuit designs!

1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.

Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary

circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.

Notes regarding these materials

1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.

2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.

3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein.

The information described here may contain technical inaccuracies or typographical errors.

Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.

Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com).

4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein.

5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.

6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.

7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination.

Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.

8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.

http://www.renesas.com

RENESAS SALES OFFICES

Renesas Technology America, Inc.

450 Holger Way, San Jose, CA 95134-1368, U.S.A

Tel: <1> (408) 382-7500 Fax: <1> (408) 382-7501

Renesas Technology Europe Limited.

Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, United Kingdom

Tel: <44> (1628) 585 100, Fax: <44> (1628) 585 900

Renesas Technology Europe GmbH

Dornacher Str. 3, D-85622 Feldkirchen, Germany

Tel: <49> (89) 380 70 0, Fax: <49> (89) 929 30 11

Renesas Technology Hong Kong Ltd.

7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Hong Kong

Tel: <852> 2265-6688, Fax: <852> 2375-6836

Renesas Technology Taiwan Co., Ltd.

FL 10, #99, Fu-Hsing N. Rd., Taipei, Taiwan

Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999

Renesas Technology (Shanghai) Co., Ltd.

26/F., Ruijin Building, No.205 Maoming Road (S), Shanghai 200020, China

Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952

Renesas Technology Singapore Pte. Ltd.

1, Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632

Tel: <65> 6213-0200, Fax: <65> 6278-8001

© 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.

Colophon .1.0

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