STM32L475xx
STM32L475xx
Ultra-low-power ARM® Cortex®-M4 32-bit MCU+FPU, 100DMIPS,
up to 1MB Flash, 128 KB SRAM, USB OTG FS, analog, audio
Datasheet - production data
Features
• Ultra-low-power with FlexPowerControl
– 1.71 V to 3.6 V power supply
– -40 °C to 85/105/125 °C temperature range
– 300 nA in VBAT mode: supply for RTC and
32x32-bit backup registers
– 30 nA Shutdown mode (5 wakeup pins)
– 120 nA Standby mode (5 wakeup pins)
– 420 nA Standby mode with RTC
– 1.1 µA Stop 2 mode, 1.4 µA Stop 2 with
RTC
– 100 µA/MHz run mode
– Batch acquisition mode (BAM)
– 4 µs wakeup from Stop mode
– Brown out reset (BOR) in all modes except
shutdown
– Interconnect matrix
• Core: ARM® 32-bit Cortex®-M4 CPU with FPU,
Adaptive real-time accelerator (ART
Accelerator™) allowing 0-wait-state execution
from Flash memory, frequency up to 80 MHz,
MPU, 100DMIPS/1.25DMIPS/MHz (Dhrystone
2.1), and DSP instructions
• Clock Sources
– 4 to 48 MHz crystal oscillator
– 32 kHz crystal oscillator for RTC (LSE)
– Internal 16 MHz factory-trimmed RC (±1%)
– Internal low-power 32 kHz RC (±5%)
– Internal multispeed 100 kHz to 48 MHz
oscillator, auto-trimmed by LSE (better than
±0.25 % accuracy)
– 3 PLLs for system clock, USB, audio, ADC
• RTC with HW calendar, alarms and calibration
• Up to 21 capacitive sensing channels: support
touchkey, linear and rotary touch sensors
• 16x timers: 2 x 16-bit advanced motor-control,
2 x 32-bit and 5 x 16-bit general purpose, 2x
16-bit basic, 2x low-power 16-bit timers
(available in Stop mode), 2x watchdogs,
SysTick timer
• Up to 114 fast I/Os, most 5 V-tolerant, up to 14
I/Os with independent supply down to 1.08 V
March 2016
This is information on a product in full production.
LQFP100 (14 x 14)
LQFP64 (10 x 10)
• Memories
– Up to 1 MB Flash, 2 banks read-whilewrite, proprietary code readout protection
– Up to 128 KB of SRAM including 32 KB
with hardware parity check
– External memory interface for static
memories supporting SRAM, PSRAM and
NOR memories
– Quad SPI memory interface
• 4x digital filters for sigma delta modulator
• Rich analog peripherals (independent supply)
– 3× 12-bit ADC 5 Msps, up to 16-bit with
hardware oversampling, 200 µA/Msps
– 2x 12-bit DAC, low-power sample and hold
– 2x operational amplifiers with built-in PGA
– 2x ultra-low-power comparators
• 18x communication interfaces
– USB OTG 2.0 full-speed, LPM and BCD
– 2x SAIs (serial audio interface)
– 3x I2C FM+(1 Mbit/s), SMBus/PMBus
– 6x USARTs (ISO 7816, LIN, IrDA, modem)
– 3x SPIs (4x SPIs with the Quad SPI)
– CAN (2.0B Active) and SDMMC interface
– SWPMI single wire protocol master I/F
• 14-channel DMA controller
• True random number generator
• CRC calculation unit, 96-bit unique ID
• Development support: serial wire debug
(SWD), JTAG, Embedded Trace Macrocell™
Table 1. Device summary
Reference
STM32L475xx
DocID027692 Rev 2
Part number
STM32L475RG, STM32L475VG, STM32L475RE,
STM32L475VE, STM32L475RC, STM32L475VC
1/193
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Contents
STM32L475xx
Contents
1
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3
Functional overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.1
ARM® Cortex®-M4 core with FPU . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.2
Adaptive real-time memory accelerator (ART Accelerator™) . . . . . . . . . 15
3.3
Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
3.4
Embedded Flash memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.5
Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.6
Firewall . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
3.7
Boot modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.8
Cyclic redundancy check calculation unit (CRC) . . . . . . . . . . . . . . . . . . . 18
3.9
Power supply management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Power supply schemes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.9.2
Power supply supervisor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.9.3
Voltage regulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.9.4
Low-power modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.9.5
Reset mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.9.6
VBAT operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3.10
Interconnect matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
3.11
Clocks and startup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
3.12
General-purpose inputs/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . . 34
3.13
Direct memory access controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . . 34
3.14
Interrupts and events . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
3.15
3.16
2/193
3.9.1
3.14.1
Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . 35
3.14.2
Extended interrupt/event controller (EXTI) . . . . . . . . . . . . . . . . . . . . . . 35
Analog to digital converter (ADC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.15.1
Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
3.15.2
Internal voltage reference (VREFINT) . . . . . . . . . . . . . . . . . . . . . . . . . . 37
3.15.3
VBAT battery voltage monitoring . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Digital to analog converter (DAC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
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STM32L475xx
Contents
3.17
Voltage reference buffer (VREFBUF) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3.18
Comparators (COMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
3.19
Operational amplifier (OPAMP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
3.20
Touch sensing controller (TSC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
3.21
Digital filter for Sigma-Delta Modulators (DFSDM) . . . . . . . . . . . . . . . . . . 40
3.22
Random number generator (RNG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
3.23
Timers and watchdogs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
3.23.1
Advanced-control timer (TIM1, TIM8) . . . . . . . . . . . . . . . . . . . . . . . . . . 42
3.23.2
General-purpose timers (TIM2, TIM3, TIM4, TIM5, TIM15, TIM16,
TIM17) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
3.23.3
Basic timers (TIM6 and TIM7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
3.23.4
Low-power timer (LPTIM1 and LPTIM2) . . . . . . . . . . . . . . . . . . . . . . . . 43
3.23.5
Independent watchdog (IWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
3.23.6
System window watchdog (WWDG) . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
3.23.7
SysTick timer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
3.24
Real-time clock (RTC) and backup registers . . . . . . . . . . . . . . . . . . . . . . 44
3.25
Inter-integrated circuit interface (I2C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
3.26
Universal synchronous/asynchronous receiver transmitter (USART) . . . 46
3.27
Low-power universal asynchronous receiver transmitter (LPUART) . . . . 47
3.28
Serial peripheral interface (SPI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
3.29
Serial audio interfaces (SAI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48
3.30
Single wire protocol master interface (SWPMI) . . . . . . . . . . . . . . . . . . . . 49
3.31
Controller area network (CAN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
3.32
Secure digital input/output and MultiMediaCards Interface (SDMMC) . . . 50
3.33
Universal serial bus on-the-go full-speed (OTG_FS) . . . . . . . . . . . . . . . . 50
3.34
Flexible static memory controller (FSMC) . . . . . . . . . . . . . . . . . . . . . . . . 51
3.35
Quad SPI memory interface (QUADSPI) . . . . . . . . . . . . . . . . . . . . . . . . . 51
3.36
Development support . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
3.36.1
Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . 53
3.36.2
Embedded Trace Macrocell™ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
4
Pinouts and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
5
Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
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Contents
6
STM32L475xx
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
6.1
4/193
Parameter conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
6.1.1
Minimum and maximum values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
6.1.2
Typical values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
6.1.3
Typical curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
6.1.4
Loading capacitor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
6.1.5
Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
6.1.6
Power supply scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
6.1.7
Current consumption measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
6.2
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
6.3
Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
6.3.1
General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
6.3.2
Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . 85
6.3.3
Embedded reset and power control block characteristics . . . . . . . . . . . 85
6.3.4
Embedded voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
6.3.5
Supply current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
6.3.6
Wakeup time from low-power modes and voltage scaling
transition times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
6.3.7
External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 110
6.3.8
Internal clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 115
6.3.9
PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
6.3.10
Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
6.3.11
EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
6.3.12
Electrical sensitivity characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
6.3.13
I/O current injection characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
6.3.14
I/O port characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
6.3.15
NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
6.3.16
Analog switches booster . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
6.3.17
Analog-to-Digital converter characteristics . . . . . . . . . . . . . . . . . . . . . 134
6.3.18
Digital-to-Analog converter characteristics . . . . . . . . . . . . . . . . . . . . . 147
6.3.19
Voltage reference buffer characteristics . . . . . . . . . . . . . . . . . . . . . . . . 151
6.3.20
Comparator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
6.3.21
Operational amplifiers characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 154
6.3.22
Temperature sensor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
6.3.23
VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
6.3.24
DFSDM characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
6.3.25
Timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159
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Contents
6.3.26
Communication interfaces characteristics . . . . . . . . . . . . . . . . . . . . . . 161
6.3.27
FSMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173
Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182
7.1
LQFP100 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182
7.2
LQFP64 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185
7.3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
7.3.1
Reference document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
7.3.2
Selecting the product temperature range . . . . . . . . . . . . . . . . . . . . . . 188
8
Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191
9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192
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List of tables
STM32L475xx
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Table 18.
Table 19.
Table 20.
Table 21.
Table 22.
Table 23.
Table 24.
Table 25.
Table 26.
Table 27.
Table 28.
Table 29.
Table 30.
Table 31.
Table 32.
Table 33.
Table 34.
Table 35.
Table 36.
Table 37.
Table 38.
Table 39.
Table 40.
Table 41.
6/193
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
STM32L475xx family device features and peripheral counts . . . . . . . . . . . . . . . . . . . . . . . 12
Access status versus readout protection level and execution modes. . . . . . . . . . . . . . . . . 16
STM32L475 modes overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Functionalities depending on the working mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
STM32L475xx peripherals interconnect matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
DMA implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Internal voltage reference calibration values . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
I2C implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
STM32L475xx USART/UART/LPUART features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
SAI implementation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
STM32L475xx pin definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
Alternate function AF0 to AF7 (for AF8 to AF15 see Table 17) . . . . . . . . . . . . . . . . . . . . . 65
Alternate function AF8 to AF15 (for AF0 to AF7 see Table 16) . . . . . . . . . . . . . . . . . . . . . 70
STM32L475xx memory map and peripheral register boundary
addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76
Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83
General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84
Operating conditions at power-up / power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Embedded reset and power control block characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 85
Embedded internal voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Current consumption in Run and Low-power run modes, code with data processing
running from Flash, ART enable (Cache ON Prefetch OFF) . . . . . . . . . . . . . . . . . . . . . . . 90
Current consumption in Run and Low-power run modes, code with data processing
running from Flash, ART disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
Current consumption in Run and Low-power run modes, code with data processing
running from SRAM1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92
Typical current consumption in Run and Low-power run modes, with different codes
running from Flash, ART enable (Cache ON Prefetch OFF) . . . . . . . . . . . . . . . . . . . . . . . 93
Typical current consumption in Run and Low-power run modes, with different codes
running from Flash, ART disable . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
Typical current consumption in Run and Low-power run modes, with different codes
running from SRAM1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
Current consumption in Sleep and Low-power sleep modes, Flash ON . . . . . . . . . . . . . . 95
Current consumption in Low-power sleep modes, Flash in power-down . . . . . . . . . . . . . . 96
Current consumption in Stop 2 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96
Current consumption in Stop 1 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Current consumption in Stop 0 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Current consumption in Standby mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
Current consumption in Shutdown mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101
Current consumption in VBAT mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Peripheral current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
Low-power mode wakeup timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108
DocID027692 Rev 2
STM32L475xx
Table 42.
Table 43.
Table 44.
Table 45.
Table 46.
Table 47.
Table 48.
Table 49.
Table 50.
Table 51.
Table 52.
Table 53.
Table 54.
Table 55.
Table 56.
Table 57.
Table 58.
Table 59.
Table 60.
Table 61.
Table 62.
Table 63.
Table 64.
Table 65.
Table 66.
Table 67.
Table 68.
Table 69.
Table 70.
Table 71.
Table 72.
Table 73.
Table 74.
Table 75.
Table 76.
Table 77.
Table 78.
Table 79.
Table 80.
Table 81.
Table 82.
Table 83.
Table 84.
Table 85.
Table 86.
Table 87.
Table 88.
Table 89.
Table 90.
Table 91.
Table 92.
Table 93.
List of tables
Regulator modes transition times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Wakeup time using USART/LPUART . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
HSE oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112
LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
HSI16 oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115
MSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
PLL, PLLSAI1, PLLSAI2 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123
EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124
Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125
I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Output voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
NRST pin characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Analog switches booster characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
ADC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Maximum ADC RAIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
ADC accuracy - limited test conditions 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
ADC accuracy - limited test conditions 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
ADC accuracy - limited test conditions 3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142
ADC accuracy - limited test conditions 4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
DAC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147
DAC accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
VREFBUF characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151
COMP characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
OPAMP characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154
TS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
VBAT monitoring characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
VBAT charging characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157
DFSDM characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
TIMx characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
IWDG min/max timeout period at 32 kHz (LSI). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
WWDG min/max timeout value at 80 MHz (PCLK). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
I2C analog filter characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
SPI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162
Quad SPI characteristics in SDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
QUADSPI characteristics in DDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
SAI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167
SD / MMC dynamic characteristics, VDD=2.7 V to 3.6 V . . . . . . . . . . . . . . . . . . . . . . . . . 169
eMMC dynamic characteristics, VDD = 1.71 V to 1.9 V . . . . . . . . . . . . . . . . . . . . . . . . . . 170
USB electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172
Asynchronous multiplexed PSRAM/NOR read timings. . . . . . . . . . . . . . . . . . . . . . . . . . . 175
Asynchronous multiplexed PSRAM/NOR read-NWAIT timings . . . . . . . . . . . . . . . . . . . . 175
Asynchronous multiplexed PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . . . . . . . . . 177
Asynchronous multiplexed PSRAM/NOR write-NWAIT timings . . . . . . . . . . . . . . . . . . . . 177
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8
List of tables
STM32L475xx
Table 94.
Table 95.
Table 96.
Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 181
LQPF100 - 100-pin, 14 x 14 mm low-profile quad flat package
mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 183
Table 97.
LQFP64 - 64-pin, 10 x 10 mm low-profile quad flat
package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 185
Table 98.
Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 188
Table 99.
STM32L475xx ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191
Table 100. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192
8/193
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STM32L475xx
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Figure 33.
Figure 34.
Figure 35.
Figure 36.
Figure 37.
Figure 38.
Figure 39.
Figure 40.
Figure 41.
Figure 42.
Figure 43.
Figure 44.
STM32L475xx block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Power supply overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Clock tree . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Voltage reference buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
STM32L475Vx LQFP100 pinout(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
STM32L475Rx LQFP64 pinout(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54
STM32L475 memory map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Power supply scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81
Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82
VREFINT versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
High-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113
Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
HSI16 frequency versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Typical current consumption versus MSI frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
I/O input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
I/O AC characteristics definition(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Recommended NRST pin protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 133
ADC accuracy characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
Typical connection diagram using the ADC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
12-bit buffered / non-buffered DAC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149
SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163
SPI timing diagram - slave mode and CPHA = 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164
SPI timing diagram - master mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164
Quad SPI timing diagram - SDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
Quad SPI timing diagram - DDR mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
SAI master timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
SAI slave timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169
SDIO high-speed mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170
SD default mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171
Asynchronous multiplexed PSRAM/NOR read waveforms. . . . . . . . . . . . . . . . . . . . . . . . 174
Asynchronous multiplexed PSRAM/NOR write waveforms . . . . . . . . . . . . . . . . . . . . . . . 176
Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 178
Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180
LQFP100 - 100-pin, 14 x 14 mm low-profile quad flat package outline . . . . . . . . . . . . . . 182
LQFP100 - 100-pin, 14 x 14 mm low-profile quad flat
recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184
LQFP100 marking (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 184
LQFP64 - 64-pin, 10 x 10 mm low-profile quad flat package outline . . . . . . . . . . . . . . . . 185
LQFP64 - 64-pin, 10 x 10 mm low-profile quad flat package
recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 186
LQFP64 marking (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 187
LQFP64 PD max vs. TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190
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9
Introduction
1
STM32L475xx
Introduction
This datasheet provides the ordering information and mechanical device characteristics of
the STM32L475xx microcontrollers.
This document should be read in conjunction with the STM32L4x5 reference manual
(RM0395). The reference manual is available from the STMicroelectronics website
www.st.com.
For information on the ARM® Cortex®-M4 core, please refer to the Cortex®-M4 Technical
Reference Manual, available from the www.arm.com website.
10/193
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STM32L475xx
2
Description
Description
The STM32L475xx devices are the ultra-low-power microcontrollers based on the highperformance ARM® Cortex®-M4 32-bit RISC core operating at a frequency of up to 80 MHz.
The Cortex-M4 core features a Floating point unit (FPU) single precision which supports all
ARM single-precision data-processing instructions and data types. It also implements a full
set of DSP instructions and a memory protection unit (MPU) which enhances application
security.
The STM32L475xx devices embed high-speed memories (Flash memory up to 1 Mbyte, up
to 128 Kbyte of SRAM), a flexible external memory controller (FSMC) for static memories
(for devices with 100 pins package), a Quad SPI flash memories interface (available on all
packages) and an extensive range of enhanced I/Os and peripherals connected to two APB
buses, two AHB buses and a 32-bit multi-AHB bus matrix.
The STM32L475xx devices embed several protection mechanisms for embedded Flash
memory and SRAM: readout protection, write protection, proprietary code readout
protection and Firewall.
The devices offer up to three fast 12-bit ADCs (5 Msps), two comparators, two operational
amplifiers, two DAC channels, an internal voltage reference buffer, a low-power RTC, two
general-purpose 32-bit timer, two 16-bit PWM timers dedicated to motor control, seven
general-purpose 16-bit timers, and two 16-bit low-power timers. The devices support four
digital filters for external sigma delta modulators (DFSDM).
In addition, up to 21 capacitive sensing channels are available.
They also feature standard and advanced communication interfaces.
•
Three I2Cs
•
Three SPIs
•
Three USARTs, two UARTs and one Low-Power UART.
•
Two SAIs (Serial Audio Interfaces)
•
One SDMMC
•
One CAN
•
One USB OTG full-speed
•
One SWPMI (Single Wire Protocol Master Interface)
The STM32L475xx operates in the -40 to +85 °C (+105 °C junction), -40 to +105 °C
(+125 °C junction) and -40 to +125 °C (+130 °C junction) temperature ranges from a 1.71 to
3.6 V power supply. A comprehensive set of power-saving modes allows the design of lowpower applications.
Some independent power supplies are supported: analog independent supply input for
ADC, DAC, OPAMPs and comparators, 3.3 V dedicated supply input for USB and up to 14
I/Os can be supplied independently down to 1.08V. A VBAT input allows to backup the RTC
and backup registers.
The STM32L475xx family offers two packages from 64-pin to 100-pin packages.
DocID027692 Rev 2
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53
Description
STM32L475xx
Table 2. STM32L475xx family device features and peripheral counts
Peripheral
STM32L475Vx
Flash memory
256KB
512KB
SRAM
512KB
Yes
2 (16-bit)
General purpose
5 (16-bit)
2 (32-bit)
Basic
2 (16-bit)
Low -power
2 (16-bit)
SysTick timer
1
Watchdog timers
(independent, window)
2
SPI
3
I C
3
USART
UART
LPUART
3
2
1
SAI
2
CAN
1
USB OTG FS
Yes
SDMMC
Yes
SWPMI
Yes
Digital filters for sigma-delta modulators
Yes (4 filters)
Number of channels
8
RTC
Tamper pins
Yes
3
Random generator
2
Yes
GPIOs
Wakeup pins
Nb of I/Os down to 1.08 V
82
5
0
51
4
0
Capacitive sensing
Number of channels
21
12
12-bit ADCs
Number of channels
3
16
3
16
12-bit DAC channels
Internal voltage reference buffer
2
Yes
No
Analog comparator
2
Operational amplifiers
2
Max. CPU frequency
80 MHz
Operating voltage
Operating temperature
Packages
1MB
No
Advanced control
2
12/193
256KB
Yes(1)
Quad SPI
Comm. interfaces
1MB
128 KB
External memory controller for
static memories
Timers
STM32L475Rx
1.71 to 3.6 V
Ambient operating temperature: -40 to 85 °C / -40 to 105 °C / -40 to 125 °C
Junction temperature: -40 to 105 °C / -40 to 125 °C / -40 to 130 °C
LQFP100
DocID027692 Rev 2
LQFP64
STM32L475xx
Description
1. For the LQFP100 package, only FMC Bank1 is available. Bank1 can only support a multiplexed
NOR/PSRAM memory using the NE1 Chip Select.
DocID027692 Rev 2
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53
Description
STM32L475xx
Figure 1. STM32L475xx block diagram
-7&.6:&/.
-7$*6:
038
(70
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-7'26:'-7'2
&/.1(1/1%/>@
$>@'>@12(1:(
1:$,7DV$)
)OH[LEOHVWDWLFPHPRU\FRQWUROOHU)60&
65$0365$0125)ODVK
1$1')ODVK
1-7567-7',
75$&(&/.
'%86
75$&('>@
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14/193
287
AF: alternate function on I/O pins.
DocID027692 Rev 2
06Y9
STM32L475xx
Functional overview
3
Functional overview
3.1
ARM® Cortex®-M4 core with FPU
The ARM® Cortex®-M4 with FPU processor is the latest generation of ARM processors for
embedded systems. It was developed to provide a low-cost platform that meets the needs of
MCU implementation, with a reduced pin count and low-power consumption, while
delivering outstanding computational performance and an advanced response to interrupts.
The ARM® Cortex®-M4 with FPU 32-bit RISC processor features exceptional codeefficiency, delivering the high-performance expected from an ARM core in the memory size
usually associated with 8- and 16-bit devices.
The processor supports a set of DSP instructions which allow efficient signal processing and
complex algorithm execution.
Its single precision FPU speeds up software development by using metalanguage
development tools, while avoiding saturation.
With its embedded ARM core, the STM32L475xx family is compatible with all ARM tools
and software.
Figure 1 shows the general block diagram of the STM32L475xx family devices.
3.2
Adaptive real-time memory accelerator (ART Accelerator™)
The ART Accelerator™ is a memory accelerator which is optimized for STM32 industrystandard ARM® Cortex®-M4 processors. It balances the inherent performance advantage of
the ARM® Cortex®-M4 over Flash memory technologies, which normally requires the
processor to wait for the Flash memory at higher frequencies.
To release the processor near 100 DMIPS performance at 80MHz, the accelerator
implements an instruction prefetch queue and branch cache, which increases program
execution speed from the 64-bit Flash memory. Based on CoreMark benchmark, the
performance achieved thanks to the ART accelerator is equivalent to 0 wait state program
execution from Flash memory at a CPU frequency up to 80 MHz.
3.3
Memory protection unit
The memory protection unit (MPU) is used to manage the CPU accesses to memory to
prevent one task to accidentally corrupt the memory or resources used by any other active
task. This memory area is organized into up to 8 protected areas that can in turn be divided
up into 8 subareas. The protection area sizes are between 32 bytes and the whole 4
gigabytes of addressable memory.
The MPU is especially helpful for applications where some critical or certified code has to be
protected against the misbehavior of other tasks. It is usually managed by an RTOS (realtime operating system). If a program accesses a memory location that is prohibited by the
MPU, the RTOS can detect it and take action. In an RTOS environment, the kernel can
dynamically update the MPU area setting, based on the process to be executed.
The MPU is optional and can be bypassed for applications that do not need it.
DocID027692 Rev 2
15/193
53
Functional overview
3.4
STM32L475xx
Embedded Flash memory
STM32L475xx devices feature up to 1 Mbyte of embedded Flash memory available for
storing programs and data. The Flash memory is divided into two banks allowing readwhile-write operations. This feature allows to perform a read operation from one bank while
an erase or program operation is performed to the other bank. The dual bank boot is also
supported. Each bank contains 256 pages of 2 Kbyte.
Flexible protections can be configured thanks to option bytes:
•
Readout protection (RDP) to protect the whole memory. Three levels are available:
–
Level 0: no readout protection
–
Level 1: memory readout protection: the Flash memory cannot be read from or
written to if either debug features are connected, boot in RAM or bootloader is
selected
–
Level 2: chip readout protection: debug features (Cortex-M4 JTAG and serial
wire), boot in RAM and bootloader selection are disabled (JTAG fuse). This
selection is irreversible.
Table 3. Access status versus readout protection level and execution modes
Area
Debug, boot from RAM or boot
from system memory (loader)
User execution
Protection
level
Read
Write
Erase
Read
Write
Erase
Main
memory
1
Yes
Yes
Yes
No
No
No
2
Yes
Yes
Yes
N/A
N/A
N/A
System
memory
1
Yes
No
No
Yes
No
No
2
Yes
No
No
N/A
N/A
N/A
Option
bytes
1
Yes
Yes
Yes
Yes
Yes
Yes
2
Yes
No
No
N/A
N/A
N/A
No
No
N/A(1)
Backup
registers
SRAM2
N/A
(1)
1
Yes
Yes
2
Yes
Yes
N/A
N/A
N/A
N/A
1
Yes
Yes
Yes(1)
No
No
No(1)
2
Yes
Yes
Yes
N/A
N/A
N/A
1. Erased when RDP change from Level 1 to Level 0.
16/193
•
Write protection (WRP): the protected area is protected against erasing and
programming. Two areas per bank can be selected, with 2-Kbyte granularity.
•
Proprietary code readout protection (PCROP): a part of the flash memory can be
protected against read and write from third parties. The protected area is execute-only:
it can only be reached by the STM32 CPU, as an instruction code, while all other
accesses (DMA, debug and CPU data read, write and erase) are strictly prohibited.
One area per bank can be selected, with 64-bit granularity. An additional option bit
(PCROP_RDP) allows to select if the PCROP area is erased or not when the RDP
protection is changed from Level 1 to Level 0.
DocID027692 Rev 2
STM32L475xx
Functional overview
The whole non-volatile memory embeds the error correction code (ECC) feature supporting:
3.5
•
single error detection and correction
•
double error detection.
•
The address of the ECC fail can be read in the ECC register
Embedded SRAM
STM32L475xx devices feature up to 128 Kbyte of embedded SRAM. This SRAM is split into
two blocks:
•
96 Kbyte mapped at address 0x2000 0000 (SRAM1)
•
32 Kbyte located at address 0x1000 0000 with hardware parity check (SRAM2).
This block is accessed through the ICode/DCode buses for maximum performance.
These 32 Kbyte SRAM can also be retained in Standby mode.
The SRAM2 can be write-protected with 1 Kbyte granularity.
The memory can be accessed in read/write at CPU clock speed with 0 wait states.
3.6
Firewall
The device embeds a Firewall which protects code sensitive and secure data from any
access performed by a code executed outside of the protected areas.
Each illegal access generates a reset which kills immediately the detected intrusion.
The Firewall main features are the following:
•
•
Three segments can be protected and defined thanks to the Firewall registers:
–
Code segment (located in Flash or SRAM1 if defined as executable protected
area)
–
Non-volatile data segment (located in Flash)
–
Volatile data segment (located in SRAM1)
The start address and the length of each segments are configurable:
–
code segment: up to 1024 Kbyte with granularity of 256 bytes
–
Non-volatile data segment: up to 1024 Kbyte with granularity of 256 bytes
–
Volatile data segment: up to 96 Kbyte with a granularity of 64 bytes
•
Specific mechanism implemented to open the Firewall to get access to the protected
areas (call gate entry sequence)
•
Volatile data segment can be shared or not with the non-protected code
•
Volatile data segment can be executed or not depending on the Firewall configuration
The Flash readout protection must be set to level 2 in order to reach the expected level of
protection.
DocID027692 Rev 2
17/193
53
Functional overview
3.7
STM32L475xx
Boot modes
At startup, BOOT0 pin and BOOT1 option bit are used to select one of three boot options:
•
Boot from user Flash
•
Boot from system memory
•
Boot from embedded SRAM
The boot loader is located in system memory. It is used to reprogram the Flash memory by
using USART, I2C, SPI, CAN and USB OTG FS in Device mode through DFU (device
firmware upgrade).
3.8
Cyclic redundancy check calculation unit (CRC)
The CRC (cyclic redundancy check) calculation unit is used to get a CRC code using a
configurable generator polynomial value and size.
Among other applications, CRC-based techniques are used to verify data transmission or
storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of
verifying the Flash memory integrity. The CRC calculation unit helps compute a signature of
the software during runtime, to be compared with a reference signature generated at linktime and stored at a given memory location.
3.9
Power supply management
3.9.1
Power supply schemes
•
VDD = 1.71 to 3.6 V: external power supply for I/Os (VDDIO1), the internal regulator and
the system analog such as reset, power management and internal clocks. It is provided
externally through VDD pins.
•
VDDA = 1.62 V (ADCs/COMPs) / 1.8 (DACs/OPAMPs) to 3.6 V: external analog power
supply for ADCs, DACs, OPAMPs, Comparators and Voltage reference buffer. The
VDDA voltage level is independent from the VDD voltage.
•
VDDUSB = 3.0 to 3.6 V: external independent power supply for USB transceivers. The
VDDUSB voltage level is independent from the VDD voltage.
•
VBAT = 1.55 to 3.6 V: power supply for RTC, external clock 32 kHz oscillator and
backup registers (through power switch) when VDD is not present.
Note:
When the functions supplied by VDDA or VDDUSB are not used, these supplies should
preferably be shorted to VDD.
Note:
If these supplies are tied to ground, the I/Os supplied by these power supplies are not 5 V
tolerant (refer to Table 19: Voltage characteristics).
Note:
VDDIOx is the I/Os general purpose digital functions supply. VDDIOx represents VDDIO1, with
VDDIO1 = VDD.
18/193
DocID027692 Rev 2
STM32L475xx
Functional overview
Figure 2. Power supply overview
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3.9.2
Power supply supervisor
The device has an integrated ultra-low-power brown-out reset (BOR) active in all modes
except Shutdown and ensuring proper operation after power-on and during power down.
The device remains in reset mode when the monitored supply voltage VDD is below a
specified threshold, without the need for an external reset circuit.
The lowest BOR level is 1.71V at power on, and other higher thresholds can be selected
through option bytes.The device features an embedded programmable voltage detector
(PVD) that monitors the VDD power supply and compares it to the VPVD threshold. An
interrupt can be generated when VDD drops below the VPVD threshold and/or when VDD is
higher than the VPVD threshold. The interrupt service routine can then generate a warning
message and/or put the MCU into a safe state. The PVD is enabled by software.
In addition, the devices embeds a Peripheral Voltage Monitor which compares the
independent supply voltages VDDA, VDDUSB with a fixed threshold in order to ensure that the
peripheral is in its functional supply range.
DocID027692 Rev 2
19/193
53
Functional overview
3.9.3
STM32L475xx
Voltage regulator
Two embedded linear voltage regulators supply most of the digital circuitries: the main
regulator (MR) and the low-power regulator (LPR).
•
The MR is used in the Run and Sleep modes and in the Stop 0 mode.
•
The LPR is used in Low-Power Run, Low-Power Sleep, Stop 1 and Stop 2 modes. It is
also used to supply the 32 Kbyte SRAM2 in Standby with RAM2 retention.
•
Both regulators are in power-down in Standby and Shutdown modes: the regulator
output is in high impedance, and the kernel circuitry is powered down thus inducing
zero consumption.
The ultralow-power STM32L475xx supports dynamic voltage scaling to optimize its power
consumption in run mode. The voltage from the Main Regulator that supplies the logic
(VCORE) can be adjusted according to the system’s maximum operating frequency.
There are two power consumption ranges:
•
Range 1 with the CPU running at up to 80 MHz.
•
Range 2 with a maximum CPU frequency of 26 MHz. All peripheral clocks are also
limited to 26 MHz.
The VCORE can be supplied by the low-power regulator, the main regulator being switched
off. The system is then in Low-power run mode.
•
3.9.4
Low-power run mode with the CPU running at up to 2 MHz. Peripherals with
independent clock can be clocked by HSI16.
Low-power modes
The ultra-low-power STM32L475xx supports seven low-power modes to achieve the best
compromise between low-power consumption, short startup time, available peripherals and
available wakeup sources:
20/193
DocID027692 Rev 2
Mode
Run
LPRun
Sleep
LPSleep
Regulator
(1)
Range 1
Range2
LPR
Range 1
Range 2
LPR
DocID027692 Rev 2
SRAM
Clocks
Yes
ON(4)
ON
Any
Yes
ON(4)
ON
Any
except
PLL
No
ON(4)
ON(5)
Any
No
ON(4)
ON(5)
Any
except
PLL
All except OTG_FS, RNG
LSE
LSI
BOR, PVD, PVM
RTC,IWDG
COMPx (x=1,2)
DACx (x=1,2)
OPAMPx (x=1,2)
USARTx (x=1...5)(6)
LPUART1(6)
I2Cx (x=1...3)(7)
LPTIMx (x=1,2)
***
All other peripherals are
frozen.
No
Range 2
Off
ON
All
All except OTG_FS, RNG
Wakeup source
N/A
Consumption(3)
112 µA/MHz
100 µA/MHz
Wakeup time
N/A
All except OTG_FS, RNG
N/A
136 µA/MHz
to Range 1: 4 µs
to Range 2: 64 µs
All
Any interrupt or
event
37 µA/MHz
6 cycles
35 µA/MHz
6 cycles
Any interrupt or
event
40 µA/MHz
6 cycles
Reset pin, all I/Os
BOR, PVD, PVM
RTC,IWDG
COMPx (x=1..2)
USARTx (x=1...5)(6)
LPUART1(6)
I2Cx (x=1...3)(7)
LPTIMx (x=1,2)
OTG_FS(8)
SWPMI1(9)
108 µA
0.7 µs in SRAM
4.5 µs in Flash
All except OTG_FS, RNG
21/193
Functional overview
Flash
Range 1
Stop 0
DMA & Peripherals(2)
CPU
STM32L475xx
Table 4. STM32L475 modes overview
Mode
Stop 1
DocID027692 Rev 2
Stop 2
Regulator
(1)
LPR
LPR
CPU
No
No
Flash
Off
Off
SRAM
ON
ON
Clocks
DMA & Peripherals(2)
Wakeup source
Consumption(3)
Wakeup time
LSE
LSI
BOR, PVD, PVM
RTC,IWDG
COMPx (x=1,2)
DACx (x=1,2)
OPAMPx (x=1,2)
USARTx (x=1...5)(6)
LPUART1(6)
I2Cx (x=1...3)(7)
LPTIMx (x=1,2)
***
All other peripherals are
frozen.
Reset pin, all I/Os
BOR, PVD, PVM
RTC,IWDG
COMPx (x=1..2)
USARTx (x=1...5)(6)
LPUART1(6)
I2Cx (x=1...3)(7)
LPTIMx (x=1,2)
OTG_FS(8)
SWPMI1(9)
6.6 µA w/o RTC
6.9 µA w RTC
4 µs in SRAM
6 µs in Flash
LSE
LSI
BOR, PVD, PVM
RTC,IWDG
COMPx (x=1..2)
I2C3(7)
LPUART1(6)
LPTIM1
***
All other peripherals are
frozen.
Reset pin, all I/Os
BOR, PVD, PVM
RTC,IWDG
COMPx (x=1..2)
I2C3(7)
LPUART1(6)
LPTIM1
1.1 µA w/o RTC
1.4 µA w/RTC
Functional overview
22/193
Table 4. STM32L475 modes overview (continued)
5 µs in SRAM
7 µs in Flash
STM32L475xx
Mode
Regulator
(1)
CPU
Flash
OFF
Shutdown
OFF
DocID027692 Rev 2
Clocks
DMA & Peripherals(2)
LSE
LSI
BOR, RTC, IWDG
***
All other peripherals are
powered off.
***
I/O configuration can be
floating, pull-up or pull-down
Reset pin
5 I/Os (WKUPx)(10)
BOR, RTC, IWDG
LSE
RTC
***
All other peripherals are
powered off.
***
I/O configuration can be
floating, pull-up or pull-down(11)
Reset pin
5 I/Os (WKUPx)(10)
RTC
SRAM2
ON
LPR
Standby
SRAM
Powered
Off
Powered
Off
Off
Off
Powered
Off
Powered
Off
Wakeup source
Consumption(3)
Wakeup time
0.35 µA w/o RTC
0.65 µA w/ RTC
14 µs
0.12 µA w/o RTC
0.42 µA w/ RTC
0.03 µA w/o RTC
0.33 µA w/ RTC
STM32L475xx
Table 4. STM32L475 modes overview (continued)
256 µs
1. LPR means Main regulator is OFF and Low-power regulator is ON.
2. All peripherals can be active or clock gated to save power consumption.
3. Typical current at VDD = 1.8 V, 25°C. Consumptions values provided running from SRAM, Flash memory Off, 80 MHz in Range 1, 26 MHz in Range 2, 2 MHz in
LPRun/LPSleep.
4. The Flash memory can be put in power-down and its clock can be gated off when executing from SRAM.
5. The SRAM1 and SRAM2 clocks can be gated on or off independently.
6. U(S)ART and LPUART reception is functional in Stop mode, and generates a wakeup interrupt on Start, address match or received frame event.
7. I2C address detection is functional in Stop mode, and generates a wakeup interrupt in case of address match.
8. OTG_FS wakeup by resume from suspend and attach detection protocol event.
9. SWPMI1 wakeup by resume from suspend.
11. I/Os can be configured with internal pull-up, pull-down or floating in Shutdown mode but the configuration is lost when exiting the Shutdown mode.
23/193
Functional overview
10. The I/Os with wakeup from Standby/Shutdown capability are: PA0, PC13, PE6, PA2, PC5.
Functional overview
STM32L475xx
By default, the microcontroller is in Run mode after a system or a power Reset. It is up to the
user to select one of the low-power modes described below:
•
Sleep mode
In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can
wake up the CPU when an interrupt/event occurs.
•
Low-power run mode
This mode is achieved with VCORE supplied by the low-power regulator to minimize
the regulator's operating current. The code can be executed from SRAM or from Flash,
and the CPU frequency is limited to 2 MHz. The peripherals with independent clock can
be clocked by HSI16.
•
Low-power sleep mode
This mode is entered from the low-power run mode. Only the CPU clock is stopped.
When wakeup is triggered by an event or an interrupt, the system reverts to the lowpower run mode.
•
Stop 0, Stop 1 and Stop 2 modes
Stop mode achieves the lowest power consumption while retaining the content of
SRAM and registers. All clocks in the VCORE domain are stopped, the PLL, the MSI
RC, the HSI16 RC and the HSE crystal oscillators are disabled. The LSE or LSI is still
running.
The RTC can remain active (Stop mode with RTC, Stop mode without RTC).
Some peripherals with wakeup capability can enable the HSI16 RC during Stop mode
to detect their wakeup condition.
Three Stop modes are available: Stop 0, Stop 1 and Stop 2 modes. In Stop 2 mode,
most of the VCORE domain is put in a lower leakage mode.
Stop 1 offers the largest number of active peripherals and wakeup sources, a smaller
wakeup time but a higher consumption than Stop 2. In Stop 0 mode, the main regulator
remains ON, allowing a very fast wakeup time but with much higher consumption.
The system clock when exiting from Stop 0, Stop1 or Stop2 modes can be either MSI
up to 48 MHz or HSI16, depending on software configuration.
•
Standby mode
The Standby mode is used to achieve the lowest power consumption with BOR. The
internal regulator is switched off so that the VCORE domain is powered off. The PLL,
the MSI RC, the HSI16 RC and the HSE crystal oscillators are also switched off.
The RTC can remain active (Standby mode with RTC, Standby mode without RTC).
The brown-out reset (BOR) always remains active in Standby mode.
The state of each I/O during standby mode can be selected by software: I/O with
internal pull-up, internal pull-down or floating.
After entering Standby mode, SRAM1 and register contents are lost except for registers
in the Backup domain and Standby circuitry. Optionally, SRAM2 can be retained in
24/193
DocID027692 Rev 2
STM32L475xx
Functional overview
Standby mode, supplied by the low-power Regulator (Standby with RAM2 retention
mode).
The device exits Standby mode when an external reset (NRST pin), an IWDG reset,
WKUP pin event (configurable rising or falling edge), or an RTC event occurs (alarm,
periodic wakeup, timestamp, tamper) or a failure is detected on LSE (CSS on LSE).
The system clock after wakeup is MSI up to 8 MHz.
•
Shutdown mode
The Shutdown mode allows to achieve the lowest power consumption. The internal
regulator is switched off so that the VCORE domain is powered off. The PLL, the
HSI16, the MSI, the LSI and the HSE oscillators are also switched off.
The RTC can remain active (Shutdown mode with RTC, Shutdown mode without RTC).
The BOR is not available in Shutdown mode. No power voltage monitoring is possible
in this mode, therefore the switch to Backup domain is not supported.
SRAM1, SRAM2 and register contents are lost except for registers in the Backup
domain.
The device exits Shutdown mode when an external reset (NRST pin), a WKUP pin
event (configurable rising or falling edge), or an RTC event occurs (alarm, periodic
wakeup, timestamp, tamper).
The system clock after wakeup is MSI at 4 MHz.
DocID027692 Rev 2
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53
Functional overview
STM32L475xx
Table 5. Functionalities depending on the working mode(1)
-
-
-
Y
-
Y
-
-
-
-
-
-
-
-
-
-
O(2)
O(2)
O(2)
O(2)
-
-
-
-
-
-
-
-
-
SRAM1 (up to
96 KB)
Y
Y(3)
Y
Y(3)
Y
-
Y
-
-
-
-
-
-
SRAM2 (32 KB)
Y
Y(3)
Y
Y(3)
Y
-
Y
-
O(4)
-
-
-
-
FSMC
O
O
O
O
-
-
-
-
-
-
-
-
-
Quad SPI
O
O
O
O
-
-
-
-
-
-
-
-
-
Backup Registers
Y
Y
Y
Y
Y
-
Y
-
Y
-
Y
-
Y
Brown-out reset
(BOR)
Y
Y
Y
Y
Y
Y
Y
Y
Y
Y
-
-
-
Programmable
Voltage Detector
(PVD)
O
O
O
O
O
O
O
O
-
-
-
-
-
Peripheral Voltage
Monitor (PVMx;
x=1,2,3,4)
O
O
O
O
O
O
O
O
-
-
-
-
-
DMA
O
O
O
O
-
-
-
-
-
-
-
-
-
High Speed Internal
(HSI16)
O
O
O
O
(5)
-
(5)
-
-
-
-
-
-
High Speed
External (HSE)
O
O
O
O
-
-
-
-
-
-
-
-
-
Low Speed Internal
(LSI)
O
O
O
O
O
-
O
-
O
-
-
-
-
Low Speed External
(LSE)
O
O
O
O
O
-
O
-
O
-
O
-
O
Multi-Speed Internal
(MSI)
O
O
O
O
-
-
-
-
-
-
-
-
-
Clock Security
System (CSS)
O
O
O
O
-
-
-
-
-
-
-
-
-
Clock Security
System on LSE
O
O
O
O
O
O
O
O
O
O
-
-
-
RTC / Auto wakeup
O
O
O
O
O
O
O
O
O
O
O
O
O
Number of RTC
Tamper pins
3
3
3
3
3
O
3
O
3
O
3
O
3
Peripheral
CPU
Flash memory (up
to 1 MB)
26/193
Run
Sleep
Lowpower
run
Lowpower
sleep
-
DocID027692 Rev 2
Wakeup capability
Shutdown
Wakeup capability
Standby
Wakeup capability
Stop 2
Wakeup capability
Stop 0/1
VBAT
STM32L475xx
Functional overview
Table 5. Functionalities depending on the working mode(1) (continued)
Lowpower
run
Lowpower
sleep
-
-
-
O
-
-
Wakeup capability
Sleep
-
-
-
-
Shutdown
Wakeup capability
Run
Standby
Wakeup capability
Peripheral
Stop 2
Wakeup capability
Stop 0/1
-
-
-
-
-
-
-
-
-
VBAT
USB OTG FS
O(8)
O(8)
-
-
USARTx
(x=1,2,3,4,5)
O
O
O
O
O(6) O(6)
Low-power UART
(LPUART)
O
O
O
O
O(6) O(6) O(6) O(6)
-
-
-
-
-
I2Cx (x=1,2)
O
O
O
O
O(7) O(7)
-
-
-
-
-
-
-
O(7)
O(7)
O(7)
-
-
-
-
-
I2C3
O
O
O
O
O(7)
SPIx (x=1,2,3)
O
O
O
O
-
-
-
-
-
-
-
-
-
CAN
O
O
O
O
-
-
-
-
-
-
-
-
-
SDMMC1
O
O
O
O
-
-
-
-
-
-
-
-
-
SWPMI1
O
O
O
O
-
O
-
-
-
-
-
-
-
SAIx (x=1,2)
O
O
O
O
-
-
-
-
-
-
-
-
-
DFSDM
O
O
O
O
-
-
-
-
-
-
-
-
-
ADCx (x=1,2,3)
O
O
O
O
-
-
-
-
-
-
-
-
-
DACx (x=1,2)
O
O
O
O
O
-
-
-
-
-
-
-
-
VREFBUF
O
O
O
O
O
-
-
-
-
-
-
-
-
OPAMPx (x=1,2)
O
O
O
O
O
-
-
-
-
-
-
-
-
COMPx (x=1,2)
O
O
O
O
O
O
O
O
-
-
-
-
-
Temperature sensor
O
O
O
O
-
-
-
-
-
-
-
-
-
Timers (TIMx)
O
O
O
O
-
-
-
-
-
-
-
-
-
Low-power timer 1
(LPTIM1)
O
O
O
O
O
O
O
O
-
-
-
-
-
Low-power timer 2
(LPTIM2)
O
O
O
O
O
O
-
-
-
-
-
-
-
Independent
watchdog (IWDG)
O
O
O
O
O
O
O
O
O
O
-
-
-
Window watchdog
(WWDG)
O
O
O
O
-
-
-
-
-
-
-
-
-
SysTick timer
O
O
O
O
-
-
-
-
-
-
-
-
-
Touch sensing
controller (TSC)
O
O
O
O
-
-
-
-
-
-
-
-
-
Random number
generator (RNG)
O(8)
O(8)
-
-
-
-
-
-
-
-
-
-
-
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53
Functional overview
STM32L475xx
Table 5. Functionalities depending on the working mode(1) (continued)
-
-
-
CRC calculation
unit
O
O
O
O
-
-
-
-
-
-
-
-
-
GPIOs
O
O
O
O
O
O
O
O
(9)
5
pins
(11)
5
pins
-
Peripheral
Run
Sleep
Lowpower
run
Lowpower
sleep
-
(10)
Wakeup capability
Shutdown
Wakeup capability
Standby
Wakeup capability
Stop 2
Wakeup capability
Stop 0/1
VBAT
(10)
1. Legend: Y = Yes (Enable). O = Optional (Disable by default. Can be enabled by software). - = Not available.
2. The Flash can be configured in power-down mode. By default, it is not in power-down mode.
3. The SRAM clock can be gated on or off.
4. SRAM2 content is preserved when the bit RRS is set in PWR_CR3 register.
5. Some peripherals with wakeup from Stop capability can request HSI16 to be enabled. In this case, HSI16 is woken up by
the peripheral, and only feeds the peripheral which requested it. HSI16 is automatically put off when the peripheral does not
need it anymore.
6. UART and LPUART reception is functional in Stop mode, and generates a wakeup interrupt on Start, address match or
received frame event.
7. I2C address detection is functional in Stop mode, and generates a wakeup interrupt in case of address match.
8. Voltage scaling Range 1 only.
9. I/Os can be configured with internal pull-up, pull-down or floating in Standby mode.
10. The I/Os with wakeup from Standby/Shutdown capability are: PA0, PC13, PE6, PA2, PC5.
11. I/Os can be configured with internal pull-up, pull-down or floating in Shutdown mode but the configuration is lost when
exiting the Shutdown mode.
3.9.5
Reset mode
In order to improve the consumption under reset, the I/Os state under and after reset is
“analog state” (the I/O schmitt trigger is disable). In addition, the internal reset pull-up is
deactivated when the reset source is internal.
3.9.6
VBAT operation
The VBAT pin allows to power the device VBAT domain from an external battery, an external
supercapacitor, or from VDD when no external battery and an external supercapacitor are
present. The VBAT pin supplies the RTC with LSE and the backup registers. Three antitamper detection pins are available in VBAT mode.
VBAT operation is automatically activated when VDD is not present.
An internal VBAT battery charging circuit is embedded and can be activated when VDD is
present.
Note:
28/193
When the microcontroller is supplied from VBAT, external interrupts and RTC alarm/events
do not exit it from VBAT operation.
DocID027692 Rev 2
STM32L475xx
3.10
Functional overview
Interconnect matrix
Several peripherals have direct connections between them. This allows autonomous
communication between peripherals, saving CPU resources thus power supply
consumption. In addition, these hardware connections allow fast and predictable latency.
Depending on peripherals, these interconnections can operate in Run, Sleep, low-power run
and sleep, Stop 0, Stop 1 and Stop 2 modes.
Run
Sleep
Low-power run
Low-power sleep
Stop 0 / Stop 1
Stop 2
Table 6. STM32L475xx peripherals interconnect matrix
TIMx
Timers synchronization or chaining
Y
Y
Y
Y
-
-
ADCx
DACx
DFSDM
Conversion triggers
Y
Y
Y
Y
-
-
DMA
Memory to memory transfer trigger
Y
Y
Y
Y
-
-
COMPx
Comparator output blanking
Y
Y
Y
Y
-
-
TIM1, 8
TIM2, 3
Timer input channel, trigger, break from
analog signals comparison
Y
Y
Y
Y
-
-
LPTIMERx
Low-power timer triggered by analog
signals comparison
Y
Y
Y
Y
Y
(1)
TIM1, 8
Timer triggered by analog watchdog
Y
Y
Y
Y
-
-
TIM16
Timer input channel from RTC events
Y
Y
Y
Y
-
-
LPTIMERx
Low-power timer triggered by RTC alarms
or tampers
Y
Y
Y
Y
Y
(1)
All clocks sources (internal TIM2
and external)
TIM15, 16, 17
Clock source used as input channel for
RC measurement and trimming
Y
Y
Y
Y
-
-
USB
Timer triggered by USB SOF
Y
Y
-
-
-
-
Timer break
Y
Y
Y
Y
-
-
Interconnect source
TIMx
COMPx
ADCx
RTC
Interconnect
destination
TIM2
CSS
CPU (hard fault)
RAM (parity error)
Flash memory (ECC error)
TIM1,8
COMPx
TIM15,16,17
PVD
DFSDM (analog
watchdog, short circuit
detection)
Interconnect action
DocID027692 Rev 2
Y
Y
29/193
53
Functional overview
STM32L475xx
Low-power run
Low-power sleep
Stop 0 / Stop 1
Stop 2
GPIO
Sleep
Interconnect source
Run
Table 6. STM32L475xx peripherals interconnect matrix (continued)
TIMx
External trigger
Y
Y
Y
Y
-
-
LPTIMERx
External trigger
Y
Y
Y
Y
Y
(1)
ADCx
DACx
DFSDM
Conversion external trigger
Y
Y
Y
Y
-
-
Interconnect
destination
Interconnect action
1. LPTIM1 only.
30/193
DocID027692 Rev 2
Y
STM32L475xx
3.11
Functional overview
Clocks and startup
The clock controller (see Figure 3) distributes the clocks coming from different oscillators to
the core and the peripherals. It also manages clock gating for low-power modes and
ensures clock robustness. It features:
•
Clock prescaler: to get the best trade-off between speed and current consumption,
the clock frequency to the CPU and peripherals can be adjusted by a programmable
prescaler
•
Safe clock switching: clock sources can be changed safely on the fly in run mode
through a configuration register.
•
Clock management: to reduce power consumption, the clock controller can stop the
clock to the core, individual peripherals or memory.
•
System clock source: four different clock sources can be used to drive the master
clock SYSCLK:
•
–
4-48 MHz high-speed external crystal or ceramic resonator (HSE), that can supply
a PLL. The HSE can also be configured in bypass mode for an external clock.
–
16 MHz high-speed internal RC oscillator (HSI16), trimmable by software, that can
supply a PLL
–
Multispeed internal RC oscillator (MSI), trimmable by software, able to generate
12 frequencies from 100 kHz to 48 MHz. When a 32.768 kHz clock source is
available in the system (LSE), the MSI frequency can be automatically trimmed by
hardware to reach better than ±0.25% accuracy. In this mode the MSI can feed the
USB device, saving the need of an external high-speed crystal (HSE). The MSI
can supply a PLL.
–
System PLL which can be fed by HSE, HSI16 or MSI, with a maximum frequency
at 80 MHz.
Auxiliary clock source: two ultralow-power clock sources that can be used to drive
the real-time clock:
–
32.768 kHz low-speed external crystal (LSE), supporting four drive capability
modes. The LSE can also be configured in bypass mode for an external clock.
–
32 kHz low-speed internal RC (LSI), also used to drive the independent watchdog.
The LSI clock accuracy is ±5% accuracy.
•
Peripheral clock sources: Several peripherals (USB, SDMMC, RNG, SAI, USARTs,
I2Cs, LPTimers, ADC, SWPMI) have their own independent clock whatever the system
clock. Three PLLs, each having three independent outputs allowing the highest
flexibility, can generate independent clocks for the ADC, the USB/SDMMC/RNG and
the two SAIs.
•
Startup clock: after reset, the microcontroller restarts by default with an internal 4 MHz
clock (MSI). The prescaler ratio and clock source can be changed by the application
program as soon as the code execution starts.
•
Clock security system (CSS): this feature can be enabled by software. If a HSE clock
failure occurs, the master clock is automatically switched to HSI16 and a software
DocID027692 Rev 2
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53
Functional overview
STM32L475xx
interrupt is generated if enabled. LSE failure can also be detected and generated an
interrupt.
•
Clock-out capability:
–
MCO: microcontroller clock output: it outputs one of the internal clocks for
external use by the application
–
LSCO: low speed clock output: it outputs LSI or LSE in all low-power modes
(except VBAT).
Several prescalers allow to configure the AHB frequency, the high speed APB (APB2) and
the low speed APB (APB1) domains. The maximum frequency of the AHB and the APB
domains is 80 MHz.
32/193
DocID027692 Rev 2
STM32L475xx
Functional overview
Figure 3. Clock tree
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DocID027692 Rev 2
33/193
53
Functional overview
3.12
STM32L475xx
General-purpose inputs/outputs (GPIOs)
Each of the GPIO pins can be configured by software as output (push-pull or open-drain), as
input (with or without pull-up or pull-down) or as peripheral alternate function. Most of the
GPIO pins are shared with digital or analog alternate functions. Fast I/O toggling can be
achieved thanks to their mapping on the AHB2 bus.
The I/Os alternate function configuration can be locked if needed following a specific
sequence in order to avoid spurious writing to the I/Os registers.
3.13
Direct memory access controller (DMA)
The device embeds 2 DMAs. Refer to Table 7: DMA implementation for the features
implementation.
Direct memory access (DMA) is used in order to provide high-speed data transfer between
peripherals and memory as well as memory to memory. Data can be quickly moved by DMA
without any CPU actions. This keeps CPU resources free for other operations.
The two DMA controllers have 14 channels in total, each dedicated to managing memory
access requests from one or more peripherals. Each has an arbiter for handling the priority
between DMA requests.
The DMA supports:
•
14 independently configurable channels (requests)
•
Each channel is connected to dedicated hardware DMA requests, software trigger is
also supported on each channel. This configuration is done by software.
•
Priorities between requests from channels of one DMA are software programmable (4
levels consisting of very high, high, medium, low) or hardware in case of equality
(request 1 has priority over request 2, etc.)
•
Independent source and destination transfer size (byte, half word, word), emulating
packing and unpacking. Source/destination addresses must be aligned on the data
size.
•
Support for circular buffer management
•
3 event flags (DMA Half Transfer, DMA Transfer complete and DMA Transfer Error)
logically ORed together in a single interrupt request for each channel
•
Memory-to-memory transfer
•
Peripheral-to-memory and memory-to-peripheral, and peripheral-to-peripheral
transfers
•
Access to Flash, SRAM, APB and AHB peripherals as source and destination
•
Programmable number of data to be transferred: up to 65536.
Table 7. DMA implementation
34/193
DMA features
DMA1
DMA2
Number of regular channels
7
7
DocID027692 Rev 2
STM32L475xx
Functional overview
3.14
Interrupts and events
3.14.1
Nested vectored interrupt controller (NVIC)
The devices embed a nested vectored interrupt controller able to manage 16 priority levels,
and handle up to 81 maskable interrupt channels plus the 16 interrupt lines of the Cortex®M4.
The NVIC benefits are the following:
•
Closely coupled NVIC gives low latency interrupt processing
•
Interrupt entry vector table address passed directly to the core
•
Allows early processing of interrupts
•
Processing of late arriving higher priority interrupts
•
Support for tail chaining
•
Processor state automatically saved
•
Interrupt entry restored on interrupt exit with no instruction overhead
The NVIC hardware block provides flexible interrupt management features with minimal
interrupt latency.
3.14.2
Extended interrupt/event controller (EXTI)
The extended interrupt/event controller consists of 36 edge detector lines used to generate
interrupt/event requests and wake-up the system from Stop mode. Each external line can be
independently configured to select the trigger event (rising edge, falling edge, both) and can
be masked independently A pending register maintains the status of the interrupt requests.
The internal lines are connected to peripherals with wakeup from Stop mode capability. The
EXTI can detect an external line with a pulse width shorter than the internal clock period. Up
to 114 GPIOs can be connected to the 16 external interrupt lines.
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53
Functional overview
3.15
STM32L475xx
Analog to digital converter (ADC)
The device embeds 3 successive approximation analog-to-digital converters with the
following features:
•
12-bit native resolution, with built-in calibration
•
5.33 Msps maximum conversion rate with full resolution
Down to 18.75 ns sampling time
–
Increased conversion rate for lower resolution (up to 8.88 Msps for 6-bit
resolution)
•
Up to 16 external channels, some of them shared between ADC1 and ADC2, or ADC1,
ADC2 and ADC3.
•
5 Internal channels: internal reference voltage, temperature sensor, VBAT/3, DAC1 and
DAC2 outputs.
•
One external reference pin is available on some package, allowing the input voltage
range to be independent from the power supply
•
Single-ended and differential mode inputs
•
Low-power design
•
3.15.1
–
–
Capable of low-current operation at low conversion rate (consumption decreases
linearly with speed)
–
Dual clock domain architecture: ADC speed independent from CPU frequency
Highly versatile digital interface
–
Single-shot or continuous/discontinuous sequencer-based scan mode: 2 groups
of analog signals conversions can be programmed to differentiate background and
high-priority real-time conversions
–
Handles two ADC converters for dual mode operation (simultaneous or
interleaved sampling modes)
–
Each ADC support multiple trigger inputs for synchronization with on-chip timers
and external signals
–
Results stored into 3 data register or in RAM with DMA controller support
–
Data pre-processing: left/right alignment and per channel offset compensation
–
Built-in oversampling unit for enhanced SNR
–
Channel-wise programmable sampling time
–
Three analog watchdog for automatic voltage monitoring, generating interrupts
and trigger for selected timers
–
Hardware assistant to prepare the context of the injected channels to allow fast
context switching
Temperature sensor
The temperature sensor (TS) generates a voltage VTS that varies linearly with temperature.
The temperature sensor is internally connected to the ADC1_IN17 and ADC3_IN17 input
channels which is used to convert the sensor output voltage into a digital value.
The sensor provides good linearity but it has to be calibrated to obtain good overall
accuracy of the temperature measurement. As the offset of the temperature sensor varies
from chip to chip due to process variation, the uncalibrated internal temperature sensor is
suitable for applications that detect temperature changes only.
36/193
DocID027692 Rev 2
STM32L475xx
Functional overview
To improve the accuracy of the temperature sensor measurement, each device is
individually factory-calibrated by ST. The temperature sensor factory calibration data are
stored by ST in the system memory area, accessible in read-only mode.
Table 8. Temperature sensor calibration values
3.15.2
Calibration value name
Description
Memory address
TS_CAL1
TS ADC raw data acquired at a
temperature of 30 °C (± 5 °C),
VDDA = VREF+ = 3.0 V (± 10 mV)
0x1FFF 75A8 - 0x1FFF 75A9
TS_CAL2
TS ADC raw data acquired at a
temperature of 110 °C (± 5 °C),
VDDA = VREF+ = 3.0 V (± 10 mV)
0x1FFF 75CA - 0x1FFF 75CB
Internal voltage reference (VREFINT)
The internal voltage reference (VREFINT) provides a stable (bandgap) voltage output for
the ADC and Comparators. VREFINT is internally connected to the ADC1_IN0 input
channel. The precise voltage of VREFINT is individually measured for each part by ST
during production test and stored in the system memory area. It is accessible in read-only
mode.
Table 9. Internal voltage reference calibration values
3.15.3
Calibration value name
Description
Memory address
VREFINT
Raw data acquired at a
temperature of 30 °C (± 5 °C),
VDDA = VREF+ = 3.0 V (± 10 mV)
0x1FFF 75AA - 0x1FFF 75AB
VBAT battery voltage monitoring
This embedded hardware feature allows the application to measure the VBAT battery voltage
using the internal ADC channel ADC1_IN18 or ADC3_IN18. As the VBAT voltage may be
higher than VDDA, and thus outside the ADC input range, the VBAT pin is internally
connected to a bridge divider by 3. As a consequence, the converted digital value is one
third the VBAT voltage.
3.16
Digital to analog converter (DAC)
Two 12-bit buffered DAC channels can be used to convert digital signals into analog voltage
signal outputs. The chosen design structure is composed of integrated resistor strings and
an amplifier in inverting configuration.
This digital interface supports the following features:
•
Up to two DAC output channels
•
8-bit or 12-bit output mode
•
Buffer offset calibration (factory and user trimming)
•
Left or right data alignment in 12-bit mode
•
Synchronized update capability
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Functional overview
STM32L475xx
•
Noise-wave generation
•
Triangular-wave generation
•
Dual DAC channel independent or simultaneous conversions
•
DMA capability for each channel
•
External triggers for conversion
•
Sample and hold low-power mode, with internal or external capacitor
The DAC channels are triggered through the timer update outputs that are also connected
to different DMA channels.
3.17
Voltage reference buffer (VREFBUF)
The STM32L475xx devices embed an voltage reference buffer which can be used as
voltage reference for ADCs, DACs and also as voltage reference for external components
through the VREF+ pin.
The internal voltage reference buffer supports two voltages:
•
2.048 V
•
2.5 V
An external voltage reference can be provided through the VREF+ pin when the internal
voltage reference buffer is off.
The VREF+ pin is double-bonded with VDDA on some packages. In these packages the
internal voltage reference buffer is not available.
Figure 4. Voltage reference buffer
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3.18
Comparators (COMP)
The STM32L475xx devices embed two rail-to-rail comparators with programmable
reference voltage (internal or external), hysteresis and speed (low speed for low-power) and
with selectable output polarity.
The reference voltage can be one of the following:
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•
External I/O
•
DAC output channels
•
Internal reference voltage or submultiple (1/4, 1/2, 3/4).
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Functional overview
All comparators can wake up from Stop mode, generate interrupts and breaks for the timers
and can be also combined into a window comparator.
3.19
Operational amplifier (OPAMP)
The STM32L475xx embeds two operational amplifiers with external or internal follower
routing and PGA capability.
The operational amplifier features:
3.20
•
Low input bias current
•
Low offset voltage
•
Low-power mode
•
Rail-to-rail input
Touch sensing controller (TSC)
The touch sensing controller provides a simple solution for adding capacitive sensing
functionality to any application. Capacitive sensing technology is able to detect finger
presence near an electrode which is protected from direct touch by a dielectric (glass,
plastic, ...). The capacitive variation introduced by the finger (or any conductive object) is
measured using a proven implementation based on a surface charge transfer acquisition
principle.
The touch sensing controller is fully supported by the STMTouch touch sensing firmware
library which is free to use and allows touch sensing functionality to be implemented reliably
in the end application.
The main features of the touch sensing controller are the following:
Note:
•
Proven and robust surface charge transfer acquisition principle
•
Supports up to 21 capacitive sensing channels
•
Up to 3 capacitive sensing channels can be acquired in parallel offering a very good
response time
•
Spread spectrum feature to improve system robustness in noisy environments
•
Full hardware management of the charge transfer acquisition sequence
•
Programmable charge transfer frequency
•
Programmable sampling capacitor I/O pin
•
Programmable channel I/O pin
•
Programmable max count value to avoid long acquisition when a channel is faulty
•
Dedicated end of acquisition and max count error flags with interrupt capability
•
One sampling capacitor for up to 3 capacitive sensing channels to reduce the system
components
•
Compatible with proximity, touchkey, linear and rotary touch sensor implementation
•
Designed to operate with STMTouch touch sensing firmware library
The number of capacitive sensing channels is dependent on the size of the packages and
subject to I/O availability.
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Functional overview
3.21
STM32L475xx
Digital filter for Sigma-Delta Modulators (DFSDM)
The device embeds one DFSDM with 4 digital filters modules and 8 external input serial
channels (transceivers) or alternately 8 internal parallel inputs support.
The DFSDM peripheral is dedicated to interface the external Σ∆ modulators to
microcontroller and then to perform digital filtering of the received data streams (which
represent analog value on Σ∆ modulators inputs). DFSDM can also interface PDM (Pulse
Density Modulation) microphones and perform PDM to PCM conversion and filtering in
hardware. DFSDM features optional parallel data stream inputs from microcontrollers
memory (through DMA/CPU transfers into DFSDM).
DFSDM transceivers support several serial interface formats (to support various Σ∆
modulators). DFSDM digital filter modules perform digital processing according user
selected filter parameters with up to 24-bit final ADC resolution.
The DFSDM peripheral supports:
•
•
8 multiplexed input digital serial channels:
–
configurable SPI interface to connect various SD modulator(s)
–
configurable Manchester coded 1 wire interface support
–
PDM (Pulse Density Modulation) microphone input support
–
maximum input clock frequency up to 20 MHz (10 MHz for Manchester coding)
–
clock output for SD modulator(s): 0..20 MHz
alternative inputs from 8 internal digital parallel channels (up to 16 bit input resolution):
–
•
–
Sincx filter: filter order/type (1..5), oversampling ratio (up to 1..1024)
–
integrator: oversampling ratio (1..256)
•
up to 24-bit output data resolution, signed output data format
•
automatic data offset correction (offset stored in register by user)
•
continuous or single conversion
•
start-of-conversion triggered by:
•
•
•
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internal sources: device memory data streams (DMA)
4 digital filter modules with adjustable digital signal processing:
–
software trigger
–
internal timers
–
external events
–
start-of-conversion synchronously with first digital filter module (DFSDM0)
analog watchdog feature:
–
low value and high value data threshold registers
–
dedicated configurable Sincx digital filter (order = 1..3, oversampling ratio = 1..32)
–
input from final output data or from selected input digital serial channels
–
continuous monitoring independently from standard conversion
short circuit detector to detect saturated analog input values (bottom and top range):
–
up to 8-bit counter to detect 1..256 consecutive 0’s or 1’s on serial data stream
–
monitoring continuously each input serial channel
break signal generation on analog watchdog event or on short circuit detector event
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•
3.22
Functional overview
extremes detector:
–
storage of minimum and maximum values of final conversion data
–
refreshed by software
•
DMA capability to read the final conversion data
•
interrupts: end of conversion, overrun, analog watchdog, short circuit, input serial
channel clock absence
•
“regular” or “injected” conversions:
–
“regular” conversions can be requested at any time or even in continuous mode
without having any impact on the timing of “injected” conversions
–
“injected” conversions for precise timing and with high conversion priority
Random number generator (RNG)
All devices embed an RNG that delivers 32-bit random numbers generated by an integrated
analog circuit.
3.23
Timers and watchdogs
The STM32L475xx includes two advanced control timers, up to nine general-purpose
timers, two basic timers, two low-power timers, two watchdog timers and a SysTick timer.
The table below compares the features of the advanced control, general purpose and basic
timers.
Table 10. Timer feature comparison
Timer type
Timer
Counter
resolution
Counter
type
Prescaler
factor
DMA
request
generation
Capture/
compare
channels
Complementary
outputs
Advanced
control
TIM1, TIM8
16-bit
Up, down,
Up/down
Any integer
between 1
and 65536
Yes
4
3
Generalpurpose
TIM2, TIM5
32-bit
Up, down,
Up/down
Any integer
between 1
and 65536
Yes
4
No
Generalpurpose
TIM3, TIM4
16-bit
Up, down,
Up/down
Any integer
between 1
and 65536
Yes
4
No
Generalpurpose
TIM15
16-bit
Up
Any integer
between 1
and 65536
Yes
2
1
Generalpurpose
TIM16, TIM17
16-bit
Up
Any integer
between 1
and 65536
Yes
1
1
Basic
TIM6, TIM7
16-bit
Up
Any integer
between 1
and 65536
Yes
0
No
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Functional overview
3.23.1
STM32L475xx
Advanced-control timer (TIM1, TIM8)
The advanced-control timer can each be seen as a three-phase PWM multiplexed on 6
channels. They have complementary PWM outputs with programmable inserted deadtimes. They can also be seen as complete general-purpose timers. The 4 independent
channels can be used for:
•
Input capture
•
Output compare
•
PWM generation (edge or center-aligned modes) with full modulation capability (0100%)
•
One-pulse mode output
In debug mode, the advanced-control timer counter can be frozen and the PWM outputs
disabled to turn off any power switches driven by these outputs.
Many features are shared with those of the general-purpose TIMx timers (described in
Section 3.23.2) using the same architecture, so the advanced-control timers can work
together with the TIMx timers via the Timer Link feature for synchronization or event
chaining.
3.23.2
General-purpose timers (TIM2, TIM3, TIM4, TIM5, TIM15, TIM16,
TIM17)
There are up to seven synchronizable general-purpose timers embedded in the
STM32L475xx (see Table 10 for differences). Each general-purpose timer can be used to
generate PWM outputs, or act as a simple time base.
•
TIM2, TIM3, TIM4 and TIM5
They are full-featured general-purpose timers:
–
TIM2 and TIM5 have a 32-bit auto-reload up/downcounter and 32-bit prescaler
–
TIM3 and TIM4 have 16-bit auto-reload up/downcounter and 16-bit prescaler.
These timers feature 4 independent channels for input capture/output compare, PWM
or one-pulse mode output. They can work together, or with the other general-purpose
timers via the Timer Link feature for synchronization or event chaining.
The counters can be frozen in debug mode.
All have independent DMA request generation and support quadrature encoders.
•
TIM15, 16 and 17
They are general-purpose timers with mid-range features:
They have 16-bit auto-reload upcounters and 16-bit prescalers.
–
TIM15 has 2 channels and 1 complementary channel
–
TIM16 and TIM17 have 1 channel and 1 complementary channel
All channels can be used for input capture/output compare, PWM or one-pulse mode
output.
The timers can work together via the Timer Link feature for synchronization or event
chaining. The timers have independent DMA request generation.
The counters can be frozen in debug mode.
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Functional overview
Basic timers (TIM6 and TIM7)
The basic timers are mainly used for DAC trigger generation. They can also be used as
generic 16-bit timebases.
3.23.4
Low-power timer (LPTIM1 and LPTIM2)
The devices embed two low-power timers. These timers have an independent clock and are
running in Stop mode if they are clocked by LSE, LSI or an external clock. They are able to
wakeup the system from Stop mode.
LPTIM1 is active in Stop 0, Stop 1 and Stop 2 modes.
LPTIM2 is active in Stop 0 and Stop 1 mode.
This low-power timer supports the following features:
3.23.5
•
16-bit up counter with 16-bit autoreload register
•
16-bit compare register
•
Configurable output: pulse, PWM
•
Continuous/ one shot mode
•
Selectable software/hardware input trigger
•
Selectable clock source
–
Internal clock sources: LSE, LSI, HSI16 or APB clock
–
External clock source over LPTIM input (working even with no internal clock
source running, used by pulse counter application).
•
Programmable digital glitch filter
•
Encoder mode (LPTIM1 only)
Independent watchdog (IWDG)
The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is
clocked from an independent 32 kHz internal RC (LSI) and as it operates independently
from the main clock, it can operate in Stop and Standby modes. It can be used either as a
watchdog to reset the device when a problem occurs, or as a free running timer for
application timeout management. It is hardware or software configurable through the option
bytes. The counter can be frozen in debug mode.
3.23.6
System window watchdog (WWDG)
The window watchdog is based on a 7-bit downcounter that can be set as free running. It
can be used as a watchdog to reset the device when a problem occurs. It is clocked from
the main clock. It has an early warning interrupt capability and the counter can be frozen in
debug mode.
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Functional overview
3.23.7
STM32L475xx
SysTick timer
This timer is dedicated to real-time operating systems, but could also be used as a standard
down counter. It features:
3.24
•
A 24-bit down counter
•
Autoreload capability
•
Maskable system interrupt generation when the counter reaches 0.
•
Programmable clock source
Real-time clock (RTC) and backup registers
The RTC is an independent BCD timer/counter. It supports the following features:
•
Calendar with subsecond, seconds, minutes, hours (12 or 24 format), week day, date,
month, year, in BCD (binary-coded decimal) format.
•
Automatic correction for 28, 29 (leap year), 30, and 31 days of the month.
•
Two programmable alarms.
•
On-the-fly correction from 1 to 32767 RTC clock pulses. This can be used to
synchronize it with a master clock.
•
Reference clock detection: a more precise second source clock (50 or 60 Hz) can be
used to enhance the calendar precision.
•
Digital calibration circuit with 0.95 ppm resolution, to compensate for quartz crystal
inaccuracy.
•
Three anti-tamper detection pins with programmable filter.
•
Timestamp feature which can be used to save the calendar content. This function can
be triggered by an event on the timestamp pin, or by a tamper event, or by a switch to
VBAT mode.
•
17-bit auto-reload wakeup timer (WUT) for periodic events with programmable
resolution and period.
The RTC and the 32 backup registers are supplied through a switch that takes power either
from the VDD supply when present or from the VBAT pin.
The backup registers are 32-bit registers used to store 128 bytes of user application data
when VDD power is not present. They are not reset by a system or power reset, or when the
device wakes up from Standby or Shutdown mode.
The RTC clock sources can be:
•
A 32.768 kHz external crystal (LSE)
•
An external resonator or oscillator (LSE)
•
The internal low power RC oscillator (LSI, with typical frequency of 32 kHz)
•
The high-speed external clock (HSE) divided by 32.
The RTC is functional in VBAT mode and in all low-power modes when it is clocked by the
LSE. When clocked by the LSI, the RTC is not functional in VBAT mode, but is functional in
all low-power modes except Shutdown mode.
All RTC events (Alarm, WakeUp Timer, Timestamp or Tamper) can generate an interrupt
and wakeup the device from the low-power modes.
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3.25
Functional overview
Inter-integrated circuit interface (I2C)
The device embeds 3 I2C. Refer to Table 11: I2C implementation for the features
implementation.
The I2C bus interface handles communications between the microcontroller and the serial
I2C bus. It controls all I2C bus-specific sequencing, protocol, arbitration and timing.
The I2C peripheral supports:
•
•
I2C-bus specification and user manual rev. 5 compatibility:
–
Slave and master modes, multimaster capability
–
Standard-mode (Sm), with a bitrate up to 100 kbit/s
–
Fast-mode (Fm), with a bitrate up to 400 kbit/s
–
Fast-mode Plus (Fm+), with a bitrate up to 1 Mbit/s and 20 mA output drive I/Os
–
7-bit and 10-bit addressing mode, multiple 7-bit slave addresses
–
Programmable setup and hold times
–
Optional clock stretching
System Management Bus (SMBus) specification rev 2.0 compatibility:
–
Hardware PEC (Packet Error Checking) generation and verification with ACK
control
–
Address resolution protocol (ARP) support
–
SMBus alert
•
Power System Management Protocol (PMBusTM) specification rev 1.1 compatibility
•
Independent clock: a choice of independent clock sources allowing the I2C
communication speed to be independent from the PCLK reprogramming. Refer to
Figure 3: Clock tree.
•
Wakeup from Stop mode on address match
•
Programmable analog and digital noise filters
•
1-byte buffer with DMA capability
Table 11. I2C implementation
I2C features(1)
I2C1
I2C2
I2C3
Standard-mode (up to 100 kbit/s)
X
X
X
Fast-mode (up to 400 kbit/s)
X
X
X
Fast-mode Plus with 20mA output drive I/Os (up to 1 Mbit/s)
X
X
X
Programmable analog and digital noise filters
X
X
X
SMBus/PMBus hardware support
X
X
X
Independent clock
X
X
X
Wakeup from Stop 0 / Stop 1 mode on address match
X
X
X
Wakeup from Stop 2 mode on address match
-
-
X
1. X: supported
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Functional overview
3.26
STM32L475xx
Universal synchronous/asynchronous receiver transmitter
(USART)
The STM32L475xx devices have three embedded universal synchronous receiver
transmitters (USART1, USART2 and USART3) and two universal asynchronous receiver
transmitters (UART4, UART5).
These interfaces provide asynchronous communication, IrDA SIR ENDEC support,
multiprocessor communication mode, single-wire half-duplex communication mode and
have LIN Master/Slave capability. They provide hardware management of the CTS and RTS
signals, and RS485 Driver Enable. They are able to communicate at speeds of up to
10Mbit/s.
USART1, USART2 and USART3 also provide Smart Card mode (ISO 7816 compliant) and
SPI-like communication capability.
All USART have a clock domain independent from the CPU clock, allowing the USARTx
(x=1,2,3,4,5) to wake up the MCU from Stop mode using baudrates up to 200 Kbaud.The
wake up events from Stop mode are programmable and can be:
•
Start bit detection
•
Any received data frame
•
A specific programmed data frame
All USART interfaces can be served by the DMA controller.
Table 12. STM32L475xx USART/UART/LPUART features
USART modes/features(1)
USART1 USART2 USART3
UART4
UART5
LPUART1
Hardware flow control for modem
X
X
X
X
X
X
Continuous communication using DMA
X
X
X
X
X
X
Multiprocessor communication
X
X
X
X
X
X
Synchronous mode
X
X
X
-
-
-
Smartcard mode
X
X
X
-
-
-
Single-wire half-duplex communication
X
X
X
X
X
X
IrDA SIR ENDEC block
X
X
X
X
X
-
LIN mode
X
X
X
X
X
-
Dual clock domain
X
X
X
X
X
X
Wakeup from Stop 0 / Stop 1 modes
X
X
X
X
X
X
Wakeup from Stop 2 mode
-
-
-
-
-
X
Receiver timeout interrupt
X
X
X
X
X
-
Modbus communication
X
X
X
X
X
-
Auto baud rate detection
Driver Enable
X (4 modes)
X
X
LPUART/USART data length
X
7, 8 and 9 bits
1. X = supported.
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X
STM32L475xx
3.27
Functional overview
Low-power universal asynchronous receiver transmitter
(LPUART)
The device embeds one Low-Power UART. The LPUART supports asynchronous serial
communication with minimum power consumption. It supports half duplex single wire
communication and modem operations (CTS/RTS). It allows multiprocessor
communication.
The LPUART has a clock domain independent from the CPU clock, and can wakeup the
system from Stop mode using baudrates up to 220 Kbaud. The wake up events from Stop
mode are programmable and can be:
•
Start bit detection
•
Any received data frame
•
A specific programmed data frame
Only a 32.768 kHz clock (LSE) is needed to allow LPUART communication up to 9600
baud. Therefore, even in Stop mode, the LPUART can wait for an incoming frame while
having an extremely low energy consumption. Higher speed clock can be used to reach
higher baudrates.
LPUART interface can be served by the DMA controller.
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Functional overview
3.28
STM32L475xx
Serial peripheral interface (SPI)
Three SPI interfaces allow communication up to 40 Mbits/s in master and up to 24 Mbits/s
slave modes, in half-duplex, full-duplex and simplex modes. The 3-bit prescaler gives 8
master mode frequencies and the frame size is configurable from 4 bits to 16 bits. The SPI
interfaces support NSS pulse mode, TI mode and Hardware CRC calculation.
All SPI interfaces can be served by the DMA controller.
3.29
Serial audio interfaces (SAI)
The device embeds 2 SAI. Refer to Table 13: SAI implementation for the features
implementation. The SAI bus interface handles communications between the
microcontroller and the serial audio protocol.
The SAI peripheral supports:
•
Two independent audio sub-blocks which can be transmitters or receivers with their
respective FIFO.
•
8-word integrated FIFOs for each audio sub-block.
•
Synchronous or asynchronous mode between the audio sub-blocks.
•
Master or slave configuration independent for both audio sub-blocks.
•
Clock generator for each audio block to target independent audio frequency sampling
when both audio sub-blocks are configured in master mode.
•
Data size configurable: 8-, 10-, 16-, 20-, 24-, 32-bit.
•
Peripheral with large configurability and flexibility allowing to target as example the
following audio protocol: I2S, LSB or MSB-justified, PCM/DSP, TDM, AC’97 and SPDIF
out.
•
Up to 16 slots available with configurable size and with the possibility to select which
ones are active in the audio frame.
•
Number of bits by frame may be configurable.
•
Frame synchronization active level configurable (offset, bit length, level).
•
First active bit position in the slot is configurable.
•
LSB first or MSB first for data transfer.
•
Mute mode.
•
Stereo/Mono audio frame capability.
•
Communication clock strobing edge configurable (SCK).
•
Error flags with associated interrupts if enabled respectively.
•
•
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–
Overrun and underrun detection.
–
Anticipated frame synchronization signal detection in slave mode.
–
Late frame synchronization signal detection in slave mode.
–
Codec not ready for the AC’97 mode in reception.
Interruption sources when enabled:
–
Errors.
–
FIFO requests.
DMA interface with 2 dedicated channels to handle access to the dedicated integrated
FIFO of each SAI audio sub-block.
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Functional overview
Table 13. SAI implementation
SAI features(1)
SAI1
SAI2
I2S, LSB or MSB-justified, PCM/DSP, TDM, AC’97
X
X
Mute mode
X
X
Stereo/Mono audio frame capability.
X
X
16 slots
X
X
Data size configurable: 8-, 10-, 16-, 20-, 24-, 32-bit
X
X
X (8 Word)
X (8 Word)
X
X
FIFO Size
SPDIF
1. X: supported
3.30
Single wire protocol master interface (SWPMI)
The Single wire protocol master interface (SWPMI) is the master interface corresponding to
the Contactless Frontend (CLF) defined in the ETSI TS 102 613 technical specification. The
main features are:
•
full-duplex communication mode
•
automatic SWP bus state management (active, suspend, resume)
•
configurable bitrate up to 2 Mbit/s
•
automatic SOF, EOF and CRC handling
SWPMI can be served by the DMA controller.
3.31
Controller area network (CAN)
The CAN is compliant with specifications 2.0A and B (active) with a bit rate up to 1 Mbit/s. It
can receive and transmit standard frames with 11-bit identifiers as well as extended frames
with 29-bit identifiers. It has three transmit mailboxes, two receive FIFOs with 3 stages and
14 scalable filter banks.
The CAN peripheral supports:
•
Supports CAN protocol version 2.0 A, B Active
•
Bit rates up to 1 Mbit/s
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Functional overview
•
•
•
•
3.32
STM32L475xx
Transmission
–
Three transmit mailboxes
–
Configurable transmit priority
Reception
–
Two receive FIFOs with three stages
–
14 Scalable filter banks
–
Identifier list feature
–
Configurable FIFO overrun
Time-triggered communication option
–
Disable automatic retransmission mode
–
16-bit free running timer
–
Time Stamp sent in last two data bytes
Management
–
Maskable interrupts
–
Software-efficient mailbox mapping at a unique address space
Secure digital input/output and MultiMediaCards Interface
(SDMMC)
The card host interface (SDMMC) provides an interface between the APB peripheral bus
and MultiMediaCards (MMCs), SD memory cards and SDIO cards.
The SDMMC features include the following:
3.33
•
Full compliance with MultiMediaCard System Specification Version 4.2. Card support
for three different databus modes: 1-bit (default), 4-bit and 8-bit
•
Full compatibility with previous versions of MultiMediaCards (forward compatibility)
•
Full compliance with SD Memory Card Specifications Version 2.0
•
Full compliance with SD I/O Card Specification Version 2.0: card support for two
different databus modes: 1-bit (default) and 4-bit
•
Data transfer up to 48 MHz for the 8 bit mode
•
Data write and read with DMA capability
Universal serial bus on-the-go full-speed (OTG_FS)
The devices embed an USB OTG full-speed device/host/OTG peripheral with integrated
transceivers. The USB OTG FS peripheral is compliant with the USB 2.0 specification and
with the OTG 2.0 specification. It has software-configurable endpoint setting and supports
suspend/resume. The USB OTG controller requires a dedicated 48 MHz clock that can be
provided by the internal multispeed oscillator (MSI) automatically trimmed by 32.768 kHz
external oscillator (LSE).This allows to use the USB device without external high speed
crystal (HSE).
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Functional overview
The major features are:
•
Combined Rx and Tx FIFO size of 1.25 KB with dynamic FIFO sizing
•
Supports the session request protocol (SRP) and host negotiation protocol (HNP)
•
1 bidirectional control endpoint + 5 IN endpoints + 5 OUT endpoints
•
8 host channels with periodic OUT support
•
HNP/SNP/IP inside (no need for any external resistor)
•
Software configurable to OTG 1.3 and OTG 2.0 modes of operation
•
OTG 2.0 Supports ADP (Attach detection Protocol)
•
USB 2.0 LPM (Link Power Management) support
•
Battery Charging Specification Revision 1.2 support
•
Internal FS OTG PHY support
For OTG/Host modes, a power switch is needed in case bus-powered devices are
connected.
3.34
Flexible static memory controller (FSMC)
Flexible static memory controller (FSMC) is also named Flexible memory controller (FMC).
The main features of the FMC controller are the following:
•
Interface with static-memory mapped devices in multiplexed mode including:
–
Static random access memory (SRAM)
–
NOR Flash memory
–
PSRAM
•
8-,16- bit data bus width
•
Write FIFO
•
The Maximum FMC_CLK frequency for synchronous accesses is HCLK/2.
LCD parallel interface
The FMC can be configured to interface seamlessly with most graphic LCD controllers. It
supports the Intel 8080 and Motorola 6800 modes, and is flexible enough to adapt to
specific LCD interfaces. This LCD parallel interface capability makes it easy to build cost
effective graphic applications using LCD modules with embedded controllers or high
performance solutions using external controllers with dedicated acceleration.
3.35
Quad SPI memory interface (QUADSPI)
The Quad SPI is a specialized communication interface targeting single, dual or quad SPI
flash memories. It can operate in any of the three following modes:
•
Indirect mode: all the operations are performed using the QUADSPI registers
•
Status polling mode: the external flash status register is periodically read and an
interrupt can be generated in case of flag setting
•
Memory-mapped mode: the external flash is memory mapped and is seen by the
system as if it were an internal memory
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53
Functional overview
STM32L475xx
The Quad SPI interface supports:
52/193
•
Three functional modes: indirect, status-polling, and memory-mapped
•
SDR and DDR support
•
Fully programmable opcode for both indirect and memory mapped mode
•
Fully programmable frame format for both indirect and memory mapped mode
•
Each of the 5 following phases can be configured independently (enable, length,
single/dual/quad communication)
–
Instruction phase
–
Address phase
–
Alternate bytes phase
–
Dummy cycles phase
–
Data phase
•
Integrated FIFO for reception and transmission
•
8, 16, and 32-bit data accesses are allowed
•
DMA channel for indirect mode operations
•
Programmable masking for external flash flag management
•
Timeout management
•
Interrupt generation on FIFO threshold, timeout, status match, operation complete, and
access error
DocID027692 Rev 2
STM32L475xx
Functional overview
3.36
Development support
3.36.1
Serial wire JTAG debug port (SWJ-DP)
The ARM SWJ-DP interface is embedded, and is a combined JTAG and serial wire debug
port that enables either a serial wire debug or a JTAG probe to be connected to the target.
Debug is performed using 2 pins only instead of 5 required by the JTAG (JTAG pins could
be re-use as GPIO with alternate function): the JTAG TMS and TCK pins are shared with
SWDIO and SWCLK, respectively, and a specific sequence on the TMS pin is used to
switch between JTAG-DP and SW-DP.
3.36.2
Embedded Trace Macrocell™
The ARM Embedded Trace Macrocell provides a greater visibility of the instruction and data
flow inside the CPU core by streaming compressed data at a very high rate from the
STM32L475xx through a small number of ETM pins to an external hardware trace port
analyzer (TPA) device. Real-time instruction and data flow activity be recorded and then
formatted for display on the host computer that runs the debugger software. TPA hardware
is commercially available from common development tool vendors.
The Embedded Trace Macrocell operates with third party debugger software tools.
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53
Pinouts and pin description
4
STM32L475xx
Pinouts and pin description
9''
966
3(
3(
3%
3%
%227
3%
3%
3%
3%
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3'
3'
3'
3'
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3&
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3$
3$
Figure 5. STM32L475Vx LQFP100 pinout(1)
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9''
966
9''86%
3$
3$
3$
3$
3$
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3&
3&
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3%
3%
3%
3%
3$
966
9''
3$
3$
3$
3$
3&
3&
3%
3%
3%
3(
3(
3(
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3%
3%
966
9''
3(
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3(
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3&
3&26&B,1
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966
9''
3+26&B,1
3+26&B287
1567
3&
3&
3&
3&
966$
95()
95()
9''$
3$
3$
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069
1. The above figure shows the package top view.
9''
966
3%
3%
%227
3%
3%
3%
3%
3%
3'
3&
3&
3&
3$
3$
Figure 6. STM32L475Rx LQFP64 pinout(1)
>Y&Wϲϰ
9''86%
966
3$
3$
3$
3$
3$
3$
3&
3&
3&
3&
3%
3%
3%
3%
3$
966
9''
3$
3$
3$
3$
3&
3&
3%
3%
3%
3%
3%
966
9''
9%$7
3&
3&26&B,1
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3+26&B,1
3+26&B287
1567
3&
3&
3&
3&
966$95()
9''$95()
3$
3$
3$
069
1. The above figure shows the package top view.
54/193
DocID027692 Rev 2
STM32L475xx
Pinouts and pin description
Table 14. Legend/abbreviations used in the pinout table
Name
Abbreviation
Definition
Unless otherwise specified in brackets below the pin name, the pin function during and after
reset is the same as the actual pin name
Pin name
Pin type
S
Supply pin
I
Input only pin
I/O
Input / output pin
FT
5 V tolerant I/O
TT
3.6 V tolerant I/O
B
Dedicated BOOT0 pin
RST
Bidirectional reset pin with embedded weak pull-up resistor
I/O structure
Option for TT or FT I/Os
_f (1)
Notes
I/O, Fm+ capable
_u
(2)
I/O, with USB function supplied by VDDUSB
_a
(3)
I/O, with Analog switch function supplied by VDDA
Unless otherwise specified by a note, all I/Os are set as analog inputs during and after reset.
Alternate
Functions selected through GPIOx_AFR registers
functions
Pin
functions Additional
Functions directly selected/enabled through peripheral registers
functions
1. The related I/O structures in Table 15 are: FT_f, FT_fa, FT_f, FT_fa.
2. The related I/O structures in Table 15 are: FT_u.
3. The related I/O structures in Table 15 are: FT_a, FT_fa, TT_a.
Table 15. STM32L475xx pin definitions
Pin functions
LQFP100
(function after
reset)
Pin type
I/O structure
Notes
Pin name
LQFP64
Pin
Number
-
1
PE2
I/O
FT
-
TRACECK, TIM3_ETR,
TSC_G7_IO1, FMC_A23,
SAI1_MCLK_A, EVENTOUT
-
-
2
PE3
I/O
FT
-
TRACED0, TIM3_CH1,
TSC_G7_IO2, FMC_A19,
SAI1_SD_B, EVENTOUT
-
-
TRACED1, TIM3_CH2,
DFSDM_DATIN3,
TSC_G7_IO3, FMC_A20,
SAI1_FS_A, EVENTOUT
-
-
3
PE4
I/O
FT
Alternate functions
Additional functions
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79
Pinouts and pin description
STM32L475xx
Table 15. STM32L475xx pin definitions (continued)
Notes
(function after
reset)
I/O structure
Pin functions
Pin name
Pin type
LQFP100
LQFP64
Pin
Number
Alternate functions
Additional functions
-
-
4
PE5
I/O
FT
-
TRACED2, TIM3_CH3,
DFSDM_CKIN3,
TSC_G7_IO4, FMC_A21,
SAI1_SCK_A, EVENTOUT
-
5
PE6
I/O
FT
-
TRACED3, TIM3_CH4,
FMC_A22, SAI1_SD_A,
EVENTOUT
RTC_TAMP3/
WKUP3
1
6
VBAT
S
-
-
-
-
EVENTOUT
RTC_TAMP1/
RTC_TS/
RTC_OUT/
WKUP2
EVENTOUT
OSC32_IN
(1)
2
7
PC13
I/O
FT
3
8
PC14OSC32_IN
(PC14)
I/O
FT
4
9
PC15OSC32_OUT
(PC15)
I/O
FT
(2)
EVENTOUT
OSC32_OUT
-
10
VSS
S
-
-
-
-
-
11
VDD
S
-
-
-
-
5
12
PH0-OSC_IN
(PH0)
I/O
FT
-
EVENTOUT
OSC_IN
6
13
PH1-OSC_OUT
(PH1)
I/O
FT
-
EVENTOUT
OSC_OUT
7
14
NRST
I/O
RST
-
-
-
ADC123_IN1
(2)
(1)
(2)
(1)
8
15
PC0
I/O
FT_fa
-
LPTIM1_IN1, I2C3_SCL,
DFSDM_DATIN4,
LPUART1_RX, LPTIM2_IN1,
EVENTOUT
9
16
PC1
I/O
FT_fa
-
LPTIM1_OUT, I2C3_SDA,
DFSDM_CKIN4,
LPUART1_TX, EVENTOUT
ADC123_IN2
10
17
PC2
I/O
FT_a
-
LPTIM1_IN2, SPI2_MISO,
DFSDM_CKOUT, EVENTOUT
ADC123_IN3
11
18
PC3
I/O
FT_a
-
LPTIM1_ETR, SPI2_MOSI,
SAI1_SD_A, LPTIM2_ETR,
EVENTOUT
ADC123_IN4
-
19
VSSA
S
-
-
-
-
-
20
VREF-
S
-
-
-
-
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Pinouts and pin description
Table 15. STM32L475xx pin definitions (continued)
Pin functions
LQFP100
(function after
reset)
Pin type
I/O structure
Notes
Pin name
LQFP64
Pin
Number
Alternate functions
12
-
VSSA/VREF-
-
-
-
-
-
-
21
VREF+
S
-
-
-
VREFBUF_OUT
-
22
VDDA
S
-
-
-
-
13
-
VDDA/VREF+
S
-
-
-
-
-
TIM2_CH1, TIM5_CH1,
TIM8_ETR, USART2_CTS,
UART4_TX, SAI1_EXTCLK,
TIM2_ETR, EVENTOUT
OPAMP1_VINP, ADC12_IN5,
RTC_TAMP2/WKUP1
OPAMP1_VINM, ADC12_IN6
14
23
PA0
I/O
FT_a
Additional functions
15
24
PA1
I/O
FT_a
-
TIM2_CH2, TIM5_CH2,
USART2_RTS_DE,
UART4_RX, TIM15_CH1N,
EVENTOUT
16
25
PA2
I/O
FT_a
-
TIM2_CH3, TIM5_CH3,
USART2_TX, SAI2_EXTCLK,
TIM15_CH1, EVENTOUT
ADC12_IN7, WKUP4/LSCO
17
26
PA3
I/O
TT
-
TIM2_CH4, TIM5_CH4,
USART2_RX, TIM15_CH2,
EVENTOUT
OPAMP1_
VOUT, ADC12_IN8
18
27
VSS
S
-
-
-
-
19
28
VDD
S
-
-
-
-
20
29
PA4
I/O
TT_a
-
SPI1_NSS, SPI3_NSS,
USART2_CK, SAI1_FS_B,
LPTIM2_OUT, EVENTOUT
ADC12_IN9, DAC1_OUT1
21
30
PA5
I/O
TT_a
-
TIM2_CH1, TIM2_ETR,
TIM8_CH1N, SPI1_SCK,
LPTIM2_ETR, EVENTOUT
ADC12_IN10, DAC1_OUT2
-
TIM1_BKIN, TIM3_CH1,
TIM8_BKIN, SPI1_MISO,
USART3_CTS,
QUADSPI_BK1_IO3,
TIM1_BKIN_COMP2,
TIM8_BKIN_COMP2,
TIM16_CH1, EVENTOUT
OPAMP2_VINP, ADC12_IN11
OPAMP2_VINM, ADC12_IN12
22
31
PA6
I/O
FT_a
23
32
PA7
I/O
FT_a
-
TIM1_CH1N, TIM3_CH2,
TIM8_CH1N, SPI1_MOSI,
QUADSPI_BK1_IO2,
TIM17_CH1, EVENTOUT
24
33
PC4
I/O
FT_a
-
USART3_TX, EVENTOUT
COMP1_INM, ADC12_IN13
25
34
PC5
I/O
FT_a
-
USART3_RX, EVENTOUT
COMP1_INP, ADC12_IN14,
WKUP5
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79
Pinouts and pin description
STM32L475xx
Table 15. STM32L475xx pin definitions (continued)
26
35
PB0
I/O
TT_a
Alternate functions
Additional functions
-
TIM1_CH2N, TIM3_CH3,
TIM8_CH2N, USART3_CK,
QUADSPI_BK1_IO1,
COMP1_OUT, EVENTOUT
OPAMP2_
VOUT, ADC12_IN15
COMP1_INM, ADC12_IN16
Notes
(function after
reset)
I/O structure
Pin functions
Pin name
Pin type
LQFP100
LQFP64
Pin
Number
27
36
PB1
I/O
FT_a
-
TIM1_CH3N, TIM3_CH4,
TIM8_CH3N,
DFSDM_DATIN0,
USART3_RTS_DE,
QUADSPI_BK1_IO0,
LPTIM2_IN1, EVENTOUT
28
37
PB2
I/O
FT_a
-
RTC_OUT, LPTIM1_OUT,
I2C3_SMBA, DFSDM_CKIN0,
EVENTOUT
COMP1_INP
-
38
PE7
I/O
FT
-
TIM1_ETR, DFSDM_DATIN2,
FMC_D4, SAI1_SD_B,
EVENTOUT
-
-
39
PE8
I/O
FT
-
TIM1_CH1N, DFSDM_CKIN2,
FMC_D5, SAI1_SCK_B,
EVENTOUT
-
-
40
PE9
I/O
FT
-
TIM1_CH1, DFSDM_CKOUT,
FMC_D6, SAI1_FS_B,
EVENTOUT
-
-
TIM1_CH2N,
DFSDM_DATIN4,
TSC_G5_IO1, FMC_D7,
QUADSPI_CLK,
SAI1_MCLK_B, EVENTOUT
-
-
TIM1_CH2, DFSDM_CKIN4,
TSC_G5_IO2,
QUADSPI_NCS, FMC_D8,
EVENTOUT
-
-
TIM1_CH3N, SPI1_NSS,
DFSDM_DATIN5,
TSC_G5_IO3,
QUADSPI_BK1_IO0,
FMC_D9, EVENTOUT
-
-
TIM1_CH3, SPI1_SCK,
DFSDM_CKIN5,
TSC_G5_IO4,
QUADSPI_BK1_IO1,
FMC_D10, EVENTOUT
-
-
-
-
-
41
42
43
44
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PE10
PE11
PE12
PE13
I/O
I/O
I/O
I/O
FT
FT
FT
FT
DocID027692 Rev 2
STM32L475xx
Pinouts and pin description
Table 15. STM32L475xx pin definitions (continued)
-
-
29
45
46
47
PE14
PE15
PB10
I/O
I/O
I/O
FT
FT
FT_f
Alternate functions
Additional functions
-
TIM1_CH4, TIM1_BKIN2,
TIM1_BKIN2_COMP2,
SPI1_MISO,
QUADSPI_BK1_IO2,
FMC_D11, EVENTOUT
-
-
TIM1_BKIN,
TIM1_BKIN_COMP1,
SPI1_MOSI,
QUADSPI_BK1_IO3,
FMC_D12, EVENTOUT
-
-
TIM2_CH3, I2C2_SCL,
SPI2_SCK, DFSDM_DATIN7,
USART3_TX, LPUART1_RX,
QUADSPI_CLK,
COMP1_OUT, SAI1_SCK_A,
EVENTOUT
-
-
Notes
(function after
reset)
I/O structure
Pin functions
Pin name
Pin type
LQFP100
LQFP64
Pin
Number
30
48
PB11
I/O
FT_f
-
TIM2_CH4, I2C2_SDA,
DFSDM_CKIN7,
USART3_RX, LPUART1_TX,
QUADSPI_NCS,
COMP2_OUT, EVENTOUT
31
49
VSS
S
-
-
-
-
32
50
VDD
S
-
-
-
-
-
TIM1_BKIN,
TIM1_BKIN_COMP2,
I2C2_SMBA, SPI2_NSS,
DFSDM_DATIN1,
USART3_CK,
LPUART1_RTS_DE,
TSC_G1_IO1, SWPMI1_IO,
SAI2_FS_A, TIM15_BKIN,
EVENTOUT
-
-
TIM1_CH1N, I2C2_SCL,
SPI2_SCK, DFSDM_CKIN1,
USART3_CTS,
LPUART1_CTS,
TSC_G1_IO2, SWPMI1_TX,
SAI2_SCK_A, TIM15_CH1N,
EVENTOUT
-
33
34
51
52
PB12
PB13
I/O
I/O
FT
FT_f
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79
Pinouts and pin description
STM32L475xx
Table 15. STM32L475xx pin definitions (continued)
35
53
PB14
I/O
FT_f
Alternate functions
Additional functions
-
TIM1_CH2N, TIM8_CH2N,
I2C2_SDA, SPI2_MISO,
DFSDM_DATIN2,
USART3_RTS_DE,
TSC_G1_IO3, SWPMI1_RX,
SAI2_MCLK_A, TIM15_CH1,
EVENTOUT
-
-
Notes
(function after
reset)
I/O structure
Pin functions
Pin name
Pin type
LQFP100
LQFP64
Pin
Number
36
54
PB15
I/O
FT
-
RTC_REFIN, TIM1_CH3N,
TIM8_CH3N, SPI2_MOSI,
DFSDM_CKIN2,
TSC_G1_IO4,
SWPMI1_SUSPEND,
SAI2_SD_A, TIM15_CH2,
EVENTOUT
-
55
PD8
I/O
FT
-
USART3_TX, FMC_D13,
EVENTOUT
-
-
56
PD9
I/O
FT
-
USART3_RX, FMC_D14,
SAI2_MCLK_A, EVENTOUT
-
-
57
PD10
I/O
FT
-
USART3_CK, TSC_G6_IO1,
FMC_D15, SAI2_SCK_A,
EVENTOUT
-
-
58
PD11
I/O
FT
-
USART3_CTS, TSC_G6_IO2,
FMC_A16, SAI2_SD_A,
LPTIM2_ETR, EVENTOUT
-
-
-
59
PD12
I/O
FT
-
TIM4_CH1,
USART3_RTS_DE,
TSC_G6_IO3, FMC_A17,
SAI2_FS_A, LPTIM2_IN1,
EVENTOUT
-
60
PD13
I/O
FT
-
TIM4_CH2, TSC_G6_IO4,
FMC_A18, LPTIM2_OUT,
EVENTOUT
-
-
61
PD14
I/O
FT
-
TIM4_CH3, FMC_D0,
EVENTOUT
-
-
62
PD15
I/O
FT
-
TIM4_CH4, FMC_D1,
EVENTOUT
-
-
TIM3_CH1, TIM8_CH1,
DFSDM_CKIN3,
TSC_G4_IO1, SDMMC1_D6,
SAI2_MCLK_A, EVENTOUT
-
37
63
60/193
PC6
I/O
FT
DocID027692 Rev 2
STM32L475xx
Pinouts and pin description
Table 15. STM32L475xx pin definitions (continued)
Notes
(function after
reset)
I/O structure
Pin functions
Pin name
Pin type
LQFP100
LQFP64
Pin
Number
Alternate functions
Additional functions
-
38
64
PC7
I/O
FT
-
TIM3_CH2, TIM8_CH2,
DFSDM_DATIN3,
TSC_G4_IO2, SDMMC1_D7,
SAI2_MCLK_B, EVENTOUT
39
65
PC8
I/O
FT
-
TIM3_CH3, TIM8_CH3,
TSC_G4_IO3, SDMMC1_D0,
EVENTOUT
-
-
40
66
PC9
I/O
FT
-
TIM8_BKIN2, TIM3_CH4,
TIM8_CH4, TSC_G4_IO4,
OTG_FS_NOE, SDMMC1_D1,
SAI2_EXTCLK,
TIM8_BKIN2_COMP1,
EVENTOUT
41
67
PA8
I/O
FT
-
MCO, TIM1_CH1,
USART1_CK, OTG_FS_SOF,
LPTIM2_OUT, EVENTOUT
-
42
68
PA9
I/O
FT_u
-
TIM1_CH2, USART1_TX,
TIM15_BKIN, EVENTOUT
OTG_FS_VBUS
43
69
PA10
I/O
FT_u
-
TIM1_CH3, USART1_RX,
OTG_FS_ID, TIM17_BKIN,
EVENTOUT
-
-
44
70
PA11
I/O
FT_u
-
TIM1_CH4, TIM1_BKIN2,
USART1_CTS, CAN1_RX,
OTG_FS_DM,
TIM1_BKIN2_COMP1,
EVENTOUT
45
71
PA12
I/O
FT_u
-
TIM1_ETR,
USART1_RTS_DE, CAN1_TX,
OTG_FS_DP, EVENTOUT
-
46
72
PA13
(JTMS-SWDIO)
I/O
FT
(3)
JTMS-SWDIO, IR_OUT,
OTG_FS_NOE, EVENTOUT
-
47
-
VSS
S
-
-
-
-
48
73
VDDUSB
S
-
-
-
-
-
74
VSS
S
-
-
-
-
-
75
VDD
S
-
-
-
-
49
76
PA14
(JTCK-SWCLK)
I/O
FT
(3)
JTCK-SWCLK, EVENTOUT
-
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79
Pinouts and pin description
STM32L475xx
Table 15. STM32L475xx pin definitions (continued)
50
51
52
77
78
79
PA15 (JTDI)
PC10
PC11
I/O
I/O
I/O
FT
FT
FT
Alternate functions
Additional functions
(3)
JTDI, TIM2_CH1, TIM2_ETR,
SPI1_NSS, SPI3_NSS,
UART4_RTS_DE,
TSC_G3_IO1, SAI2_FS_B,
EVENTOUT
-
-
SPI3_SCK, USART3_TX,
UART4_TX, TSC_G3_IO2,
SDMMC1_D2, SAI2_SCK_B,
EVENTOUT
-
-
SPI3_MISO, USART3_RX,
UART4_RX, TSC_G3_IO3,
SDMMC1_D3, SAI2_MCLK_B,
EVENTOUT
-
-
Notes
(function after
reset)
I/O structure
Pin functions
Pin name
Pin type
LQFP100
LQFP64
Pin
Number
53
80
PC12
I/O
FT
-
SPI3_MOSI, USART3_CK,
UART5_TX, TSC_G3_IO4,
SDMMC1_CK, SAI2_SD_B,
EVENTOUT
-
81
PD0
I/O
FT
-
SPI2_NSS, DFSDM_DATIN7,
CAN1_RX, FMC_D2,
EVENTOUT
-
-
82
PD1
I/O
FT
-
SPI2_SCK, DFSDM_CKIN7,
CAN1_TX, FMC_D3,
EVENTOUT
-
-
54
83
PD2
I/O
FT
-
TIM3_ETR,
USART3_RTS_DE,
UART5_RX, TSC_SYNC,
SDMMC1_CMD, EVENTOUT
-
84
PD3
I/O
FT
-
SPI2_MISO, DFSDM_DATIN0,
USART2_CTS, FMC_CLK,
EVENTOUT
-
-
85
PD4
I/O
FT
-
SPI2_MOSI, DFSDM_CKIN0,
USART2_RTS_DE,
FMC_NOE, EVENTOUT
-
-
86
PD5
I/O
FT
-
USART2_TX, FMC_NWE,
EVENTOUT
-
-
87
PD6
I/O
FT
-
DFSDM_DATIN1,
USART2_RX, FMC_NWAIT,
SAI1_SD_A, EVENTOUT
-
-
88
PD7
I/O
FT
-
DFSDM_CKIN1,
USART2_CK, FMC_NE1,
EVENTOUT
-
62/193
DocID027692 Rev 2
STM32L475xx
Pinouts and pin description
Table 15. STM32L475xx pin definitions (continued)
55
56
57
58
89
90
91
92
PB3
(JTDOTRACESWO)
PB4
(NJTRST)
PB5
PB6
I/O
I/O
I/O
I/O
FT_a
FT_a
FT_a
FT_fa
Alternate functions
Additional functions
(3)
JTDO-TRACESWO,
TIM2_CH2, SPI1_SCK,
SPI3_SCK,
USART1_RTS_DE,
SAI1_SCK_B, EVENTOUT
COMP2_INM
(3)
NJTRST, TIM3_CH1,
SPI1_MISO, SPI3_MISO,
USART1_CTS,
UART5_RTS_DE,
TSC_G2_IO1, SAI1_MCLK_B,
TIM17_BKIN, EVENTOUT
COMP2_INP
-
LPTIM1_IN1, TIM3_CH2,
I2C1_SMBA, SPI1_MOSI,
SPI3_MOSI, USART1_CK,
UART5_CTS, TSC_G2_IO2,
COMP2_OUT, SAI1_SD_B,
TIM16_BKIN, EVENTOUT
-
-
LPTIM1_ETR, TIM4_CH1,
TIM8_BKIN2, I2C1_SCL,
DFSDM_DATIN5,
USART1_TX, TSC_G2_IO3,
TIM8_BKIN2_COMP2,
SAI1_FS_B, TIM16_CH1N,
EVENTOUT
COMP2_INP
COMP2_INM, PVD_IN
Notes
(function after
reset)
I/O structure
Pin functions
Pin name
Pin type
LQFP100
LQFP64
Pin
Number
59
93
PB7
I/O
FT_fa
-
LPTIM1_IN2, TIM4_CH2,
TIM8_BKIN, I2C1_SDA,
DFSDM_CKIN5,
USART1_RX, UART4_CTS,
TSC_G2_IO4, FMC_NL,
TIM8_BKIN_COMP1,
TIM17_CH1N, EVENTOUT
60
94
BOOT0
I
-
-
-
-
-
TIM4_CH3, I2C1_SCL,
DFSDM_DATIN6, CAN1_RX,
SDMMC1_D4, SAI1_MCLK_A,
TIM16_CH1, EVENTOUT
-
-
-
61
95
PB8
I/O
FT_f
62
96
PB9
I/O
FT_f
-
IR_OUT, TIM4_CH4,
I2C1_SDA, SPI2_NSS,
DFSDM_CKIN6, CAN1_TX,
SDMMC1_D5, SAI1_FS_A,
TIM17_CH1, EVENTOUT
-
97
PE0
I/O
FT
-
TIM4_ETR, FMC_NBL0,
TIM16_CH1, EVENTOUT
DocID027692 Rev 2
63/193
79
Pinouts and pin description
STM32L475xx
Table 15. STM32L475xx pin definitions (continued)
Pin functions
LQFP100
(function after
reset)
Pin type
I/O structure
Notes
Pin name
LQFP64
Pin
Number
-
98
PE1
I/O
FT
-
FMC_NBL1, TIM17_CH1,
EVENTOUT
-
63
99
VSS
S
-
-
-
-
64 100
VDD
S
-
-
-
-
Alternate functions
Additional functions
1. PC13, PC14 and PC15 are supplied through the power switch. Since the switch only sinks a limited amount of current
(3 mA), the use of GPIOs PC13 to PC15 in output mode is limited:
- The speed should not exceed 2 MHz with a maximum load of 30 pF
- These GPIOs must not be used as current sources (e.g. to drive an LED).
2. After a Backup domain power-up, PC13, PC14 and PC15 operate as GPIOs. Their function then depends on the content of
the RTC registers which are not reset by the system reset. For details on how to manage these GPIOs, refer to the Backup
domain and RTC register descriptions in the RM0395 reference manual.
3. After reset, these pins are configured as JTAG/SW debug alternate functions, and the internal pull-up on PA15, PA13, PB4
pins and the internal pull-down on PA14 pin are activated.
64/193
DocID027692 Rev 2
AF1
AF2
AF3
AF4
AF5
AF6
AF7
SYS_AF
TIM1/TIM2/
TIM5/TIM8/
LPTIM1
TIM1/TIM2/
TIM3/TIM4/
TIM5
TIM8
I2C1/I2C2/I2C3
SPI1/SPI2
SPI3/DFSDM
USART1/
USART2/
USART3
PA0
-
TIM2_CH1
TIM5_CH1
TIM8_ETR
-
-
-
USART2_CTS
PA1
-
TIM2_CH2
TIM5_CH2
-
-
-
-
USART2_RTS_
DE
PA2
-
TIM2_CH3
TIM5_CH3
-
-
-
-
USART2_TX
PA3
-
TIM2_CH4
TIM5_CH4
-
-
-
-
USART2_RX
PA4
-
-
-
-
-
SPI1_NSS
SPI3_NSS
USART2_CK
PA5
-
TIM2_CH1
TIM2_ETR
TIM8_CH1N
-
SPI1_SCK
-
-
PA6
-
TIM1_BKIN
TIM3_CH1
TIM8_BKIN
-
SPI1_MISO
-
USART3_CTS
PA7
-
TIM1_CH1N
TIM3_CH2
TIM8_CH1N
-
SPI1_MOSI
-
-
PA8
MCO
TIM1_CH1
-
-
-
-
-
USART1_CK
PA9
-
TIM1_CH2
-
-
-
-
-
USART1_TX
PA10
-
TIM1_CH3
-
-
-
-
-
USART1_RX
PA11
-
TIM1_CH4
TIM1_BKIN2
-
-
-
-
USART1_CTS
PA12
-
TIM1_ETR
-
-
-
-
-
USART1_RTS_
DE
PA13
JTMS-SWDIO
IR_OUT
-
-
-
-
-
-
PA14
JTCK-SWCLK
-
-
-
-
-
-
-
PA15
JTDI
TIM2_CH1
TIM2_ETR
-
-
SPI1_NSS
SPI3_NSS
-
Port
DocID027692 Rev 2
Port A
65/193
Pinouts and pin description
AF0
STM32L475xx
Table 16. Alternate function AF0 to AF7 (for AF8 to AF15 see Table 17)
AF1
AF2
AF3
AF4
AF5
AF6
AF7
SYS_AF
TIM1/TIM2/
TIM5/TIM8/
LPTIM1
TIM1/TIM2/
TIM3/TIM4/
TIM5
TIM8
I2C1/I2C2/I2C3
SPI1/SPI2
SPI3/DFSDM
USART1/
USART2/
USART3
PB0
-
TIM1_CH2N
TIM3_CH3
TIM8_CH2N
-
-
-
USART3_CK
PB1
-
TIM1_CH3N
TIM3_CH4
TIM8_CH3N
-
-
DFSDM_DATIN0
USART3_RTS_
DE
PB2
RTC_OUT
LPTIM1_OUT
-
-
I2C3_SMBA
-
DFSDM_CKIN0
-
PB3
JTDOTRACESWO
TIM2_CH2
-
-
-
SPI1_SCK
SPI3_SCK
USART1_RTS_
DE
PB4
NJTRST
-
TIM3_CH1
-
-
SPI1_MISO
SPI3_MISO
USART1_CTS
PB5
-
LPTIM1_IN1
TIM3_CH2
-
I2C1_SMBA
SPI1_MOSI
SPI3_MOSI
USART1_CK
PB6
-
LPTIM1_ETR
TIM4_CH1
TIM8_BKIN2
I2C1_SCL
-
DFSDM_DATIN5
USART1_TX
PB7
-
LPTIM1_IN2
TIM4_CH2
TIM8_BKIN
I2C1_SDA
-
DFSDM_CKIN5
USART1_RX
PB8
-
-
TIM4_CH3
-
I2C1_SCL
-
DFSDM_DATIN6
-
PB9
-
IR_OUT
TIM4_CH4
-
I2C1_SDA
SPI2_NSS
DFSDM_CKIN6
-
PB10
-
TIM2_CH3
-
-
I2C2_SCL
SPI2_SCK
DFSDM_DATIN7
USART3_TX
PB11
-
TIM2_CH4
-
-
I2C2_SDA
-
DFSDM_CKIN7
USART3_RX
PB12
-
TIM1_BKIN
-
TIM1_BKIN_
COMP2
I2C2_SMBA
SPI2_NSS
DFSDM_DATIN1
USART3_CK
PB13
-
TIM1_CH1N
-
-
I2C2_SCL
SPI2_SCK
DFSDM_CKIN1
USART3_CTS
PB14
-
TIM1_CH2N
-
TIM8_CH2N
I2C2_SDA
SPI2_MISO
DFSDM_DATIN2
USART3_RTS_
DE
PB15
RTC_REFIN
TIM1_CH3N
-
TIM8_CH3N
-
SPI2_MOSI
DFSDM_CKIN2
-
Port
DocID027692 Rev 2
Port B
STM32L475xx
AF0
Pinouts and pin description
66/193
Table 16. Alternate function AF0 to AF7 (for AF8 to AF15 see Table 17) (continued)
AF1
AF2
AF3
AF4
AF5
AF6
AF7
SYS_AF
TIM1/TIM2/
TIM5/TIM8/
LPTIM1
TIM1/TIM2/
TIM3/TIM4/
TIM5
TIM8
I2C1/I2C2/I2C3
SPI1/SPI2
SPI3/DFSDM
USART1/
USART2/
USART3
PC0
-
LPTIM1_IN1
-
-
I2C3_SCL
-
DFSDM_DATIN4
-
PC1
-
LPTIM1_OUT
-
-
I2C3_SDA
-
DFSDM_CKIN4
-
PC2
-
LPTIM1_IN2
-
-
-
SPI2_MISO
DFSDM_CKOUT
-
PC3
-
LPTIM1_ETR
-
-
-
SPI2_MOSI
-
-
PC4
-
-
-
-
-
-
-
USART3_TX
PC5
-
-
-
-
-
-
-
USART3_RX
PC6
-
-
TIM3_CH1
TIM8_CH1
-
-
DFSDM_CKIN3
-
PC7
-
-
TIM3_CH2
TIM8_CH2
-
-
DFSDM_DATIN3
-
PC8
-
-
TIM3_CH3
TIM8_CH3
-
-
-
-
PC9
-
TIM8_BKIN2
TIM3_CH4
TIM8_CH4
-
-
-
-
PC10
-
-
-
-
-
-
SPI3_SCK
USART3_TX
PC11
-
-
-
-
-
-
SPI3_MISO
USART3_RX
PC12
-
-
-
-
-
-
SPI3_MOSI
USART3_CK
PC13
-
-
-
-
-
-
-
-
PC14
-
-
-
-
-
-
-
-
PC15
-
-
-
-
-
-
-
-
Port
DocID027692 Rev 2
Port C
67/193
Pinouts and pin description
AF0
STM32L475xx
Table 16. Alternate function AF0 to AF7 (for AF8 to AF15 see Table 17) (continued)
AF1
AF2
AF3
AF4
AF5
AF6
AF7
SYS_AF
TIM1/TIM2/
TIM5/TIM8/
LPTIM1
TIM1/TIM2/
TIM3/TIM4/
TIM5
TIM8
I2C1/I2C2/I2C3
SPI1/SPI2
SPI3/DFSDM
USART1/
USART2/
USART3
PD0
-
-
-
-
-
SPI2_NSS
DFSDM_DATIN7
-
PD1
-
-
-
-
-
SPI2_SCK
DFSDM_CKIN7
-
PD2
-
-
TIM3_ETR
-
-
-
-
USART3_RTS_
DE
PD3
-
-
-
-
-
SPI2_MISO
DFSDM_DATIN0
USART2_CTS
PD4
-
-
-
-
-
SPI2_MOSI
DFSDM_CKIN0
USART2_RTS_
DE
PD5
-
-
-
-
-
-
-
USART2_TX
PD6
-
-
-
-
-
-
DFSDM_DATIN1
USART2_RX
PD7
-
-
-
-
-
-
DFSDM_CKIN1
USART2_CK
PD8
-
-
-
-
-
-
-
USART3_TX
PD9
-
-
-
-
-
-
-
USART3_RX
PD10
-
-
-
-
-
-
-
USART3_CK
PD11
-
-
-
-
-
-
-
USART3_CTS
PD12
-
-
TIM4_CH1
-
-
-
-
USART3_RTS_
DE
PD13
-
-
TIM4_CH2
-
-
-
-
-
PD14
-
-
TIM4_CH3
-
-
-
-
-
PD15
-
-
TIM4_CH4
-
-
-
-
-
Port
DocID027692 Rev 2
Port D
STM32L475xx
AF0
Pinouts and pin description
68/193
Table 16. Alternate function AF0 to AF7 (for AF8 to AF15 see Table 17) (continued)
AF1
AF2
AF3
AF4
AF5
AF6
AF7
SYS_AF
TIM1/TIM2/
TIM5/TIM8/
LPTIM1
TIM1/TIM2/
TIM3/TIM4/
TIM5
TIM8
I2C1/I2C2/I2C3
SPI1/SPI2
SPI3/DFSDM
USART1/
USART2/
USART3
PE0
-
-
TIM4_ETR
-
-
-
-
-
PE1
-
-
-
-
-
-
-
-
PE2
TRACECK
-
TIM3_ETR
-
-
-
-
-
PE3
TRACED0
-
TIM3_CH1
-
-
-
-
-
PE4
TRACED1
-
TIM3_CH2
-
-
-
DFSDM_DATIN3
-
PE5
TRACED2
-
TIM3_CH3
-
-
-
DFSDM_CKIN3
-
PE6
TRACED3
-
TIM3_CH4
-
-
-
-
-
PE7
-
TIM1_ETR
-
-
-
-
DFSDM_DATIN2
-
PE8
-
TIM1_CH1N
-
-
-
-
DFSDM_CKIN2
-
PE9
-
TIM1_CH1
-
-
-
-
DFSDM_CKOUT
-
PE10
-
TIM1_CH2N
-
-
-
-
DFSDM_DATIN4
-
PE11
-
TIM1_CH2
-
-
-
-
DFSDM_CKIN4
-
PE12
-
TIM1_CH3N
-
-
-
SPI1_NSS
DFSDM_DATIN5
-
PE13
-
TIM1_CH3
-
-
-
SPI1_SCK
DFSDM_CKIN5
-
PE14
-
TIM1_CH4
TIM1_BKIN2
TIM1_BKIN2_
COMP2
-
SPI1_MISO
-
-
PE15
-
TIM1_BKIN
-
TIM1_BKIN_
COMP1
-
SPI1_MOSI
-
-
PH0
-
-
-
-
-
-
-
-
PH1
-
-
-
-
-
-
-
-
Port
DocID027692 Rev 2
Port E
Port H
69/193
Pinouts and pin description
AF0
STM32L475xx
Table 16. Alternate function AF0 to AF7 (for AF8 to AF15 see Table 17) (continued)
AF8
AF9
AF10
AF11
AF12
AF13
AF14
AF15
UART4,
UART5,
LPUART1
CAN1, TSC
OTG_FS, QUADSPI
-
SDMMC1, COMP1,
COMP2, FMC,
SWPMI1
SAI1, SAI2
TIM2, TIM15,
TIM16, TIM17,
LPTIM2
EVENTOUT
PA0
UART4_TX
-
-
-
-
SAI1_EXTCLK
TIM2_ETR
EVENTOUT
PA1
UART4_RX
-
-
-
-
-
TIM15_CH1N
EVENTOUT
PA2
-
-
-
-
-
SAI2_EXTCLK
TIM15_CH1
EVENTOUT
PA3
-
-
-
-
-
-
TIM15_CH2
EVENTOUT
PA4
-
-
-
-
-
SAI1_FS_B
LPTIM2_OUT
EVENTOUT
PA5
-
-
-
-
-
-
LPTIM2_ETR
EVENTOUT
PA6
-
-
QUADSPI_BK1_IO3
-
TIM1_BKIN_
COMP2
TIM8_BKIN_
COMP2
TIM16_CH1
EVENTOUT
PA7
-
-
QUADSPI_BK1_IO2
-
-
-
TIM17_CH1
EVENTOUT
PA8
-
-
OTG_FS_SOF
-
-
-
LPTIM2_OUT
EVENTOUT
PA9
-
-
-
-
-
-
TIM15_BKIN
EVENTOUT
PA10
-
-
OTG_FS_ID
-
-
-
TIM17_BKIN
EVENTOUT
PA11
-
CAN1_RX
OTG_FS_DM
-
TIM1_BKIN2_
COMP1
-
-
EVENTOUT
PA12
-
CAN1_TX
OTG_FS_DP
-
-
-
-
EVENTOUT
PA13
-
-
OTG_FS_NOE
-
-
-
-
EVENTOUT
PA14
-
-
-
-
-
-
-
EVENTOUT
PA15
UART4_RTS
_DE
TSC_G3_IO1
-
-
-
SAI2_FS_B
-
EVENTOUT
Port
DocID027692 Rev 2
Port A
Pinouts and pin description
70/193
Table 17. Alternate function AF8 to AF15 (for AF0 to AF7 see Table 16)
STM32L475xx
AF9
AF10
AF11
AF12
AF13
AF14
AF15
UART4,
UART5,
LPUART1
CAN1, TSC
OTG_FS, QUADSPI
-
SDMMC1, COMP1,
COMP2, FMC,
SWPMI1
SAI1, SAI2
TIM2, TIM15,
TIM16, TIM17,
LPTIM2
EVENTOUT
PB0
-
-
QUADSPI_BK1_IO1
-
COMP1_OUT
-
-
EVENTOUT
PB1
-
-
QUADSPI_BK1_IO0
-
-
-
LPTIM2_IN1
EVENTOUT
PB2
-
-
-
-
-
-
-
EVENTOUT
PB3
-
-
-
-
-
SAI1_SCK_B
-
EVENTOUT
PB4
UART5_RTS
_DE
TSC_G2_IO1
-
-
-
SAI1_MCLK_
B
TIM17_BKIN
EVENTOUT
PB5
UART5_CTS
TSC_G2_IO2
-
-
COMP2_OUT
SAI1_SD_B
TIM16_BKIN
EVENTOUT
PB6
-
TSC_G2_IO3
-
-
TIM8_BKIN2_
COMP2
SAI1_FS_B
TIM16_CH1N
EVENTOUT
PB7
UART4_CTS
TSC_G2_IO4
-
-
FMC_NL
TIM8_BKIN_
COMP1
TIM17_CH1N
EVENTOUT
PB8
-
CAN1_RX
-
-
SDMMC1_D4
SAI1_MCLK_
A
TIM16_CH1
EVENTOUT
PB9
-
CAN1_TX
-
-
SDMMC1_D5
SAI1_FS_A
TIM17_CH1
EVENTOUT
PB10
LPUART1_
RX
-
QUADSPI_CLK
-
COMP1_OUT
SAI1_SCK_A
-
EVENTOUT
PB11
LPUART1_TX
-
QUADSPI_NCS
-
COMP2_OUT
-
-
EVENTOUT
PB12
LPUART1_
RTS_DE
TSC_G1_IO1
-
-
SWPMI1_IO
SAI2_FS_A
TIM15_BKIN
EVENTOUT
PB13
LPUART1_
CTS
TSC_G1_IO2
-
-
SWPMI1_TX
SAI2_SCK_A
TIM15_CH1N
EVENTOUT
PB14
-
TSC_G1_IO3
-
-
SWPMI1_RX
SAI2_MCLK_
A
TIM15_CH1
EVENTOUT
PB15
-
TSC_G1_IO4
-
-
SWPMI1_SUSPEND
SAI2_SD_A
TIM15_CH2
EVENTOUT
Port
DocID027692 Rev 2
Port B
71/193
Pinouts and pin description
AF8
STM32L475xx
Table 17. Alternate function AF8 to AF15 (for AF0 to AF7 see Table 16) (continued)
AF9
AF10
AF11
AF12
AF13
AF14
AF15
UART4,
UART5,
LPUART1
CAN1, TSC
OTG_FS, QUADSPI
-
SDMMC1, COMP1,
COMP2, FMC,
SWPMI1
SAI1, SAI2
TIM2, TIM15,
TIM16, TIM17,
LPTIM2
EVENTOUT
PC0
LPUART1_
RX
-
-
-
-
-
LPTIM2_IN1
EVENTOUT
PC1
LPUART1_TX
-
-
-
-
-
-
EVENTOUT
PC2
-
-
-
-
-
-
-
EVENTOUT
PC3
-
-
-
-
-
SAI1_SD_A
LPTIM2_ETR
EVENTOUT
PC4
-
-
-
-
-
-
-
EVENTOUT
PC5
-
-
-
-
-
-
-
EVENTOUT
PC6
-
TSC_G4_IO1
-
-
SDMMC1_D6
SAI2_MCLK_
A
-
EVENTOUT
PC7
-
TSC_G4_IO2
-
-
SDMMC1_D7
SAI2_MCLK_
B
-
EVENTOUT
PC8
-
TSC_G4_IO3
-
-
SDMMC1_D0
-
-
EVENTOUT
PC9
-
TSC_G4_IO4
OTG_FS_NOE
-
SDMMC1_D1
SAI2_EXTCLK
TIM8_BKIN2_
COMP1
EVENTOUT
PC10
UART4_TX
TSC_G3_IO2
-
-
SDMMC1_D2
SAI2_SCK_B
-
EVENTOUT
PC11
UART4_RX
TSC_G3_IO3
-
-
SDMMC1_D3
SAI2_MCLK_
B
-
EVENTOUT
PC12
UART5_TX
TSC_G3_IO4
-
-
SDMMC1_CK
SAI2_SD_B
-
EVENTOUT
PC13
-
-
-
-
-
-
-
EVENTOUT
PC14
-
-
-
-
-
-
-
EVENTOUT
PC15
-
-
-
-
-
-
-
EVENTOUT
Port
DocID027692 Rev 2
Port C
STM32L475xx
AF8
Pinouts and pin description
72/193
Table 17. Alternate function AF8 to AF15 (for AF0 to AF7 see Table 16) (continued)
AF9
AF10
AF11
AF12
AF13
AF14
AF15
UART4,
UART5,
LPUART1
CAN1, TSC
OTG_FS, QUADSPI
-
SDMMC1, COMP1,
COMP2, FMC,
SWPMI1
SAI1, SAI2
TIM2, TIM15,
TIM16, TIM17,
LPTIM2
EVENTOUT
PD0
-
CAN1_RX
-
-
FMC_D2
-
-
EVENTOUT
PD1
-
CAN1_TX
-
-
FMC_D3
-
-
EVENTOUT
PD2
UART5_RX
TSC_SYNC
-
-
SDMMC1_CMD
-
-
EVENTOUT
PD3
-
-
-
-
FMC_CLK
-
-
EVENTOUT
PD4
-
-
-
-
FMC_NOE
-
-
EVENTOUT
PD5
-
-
-
-
FMC_NWE
-
-
EVENTOUT
PD6
-
-
-
-
FMC_NWAIT
SAI1_SD_A
-
EVENTOUT
PD7
-
-
-
-
FMC_NE1
-
-
EVENTOUT
PD8
-
-
-
-
FMC_D13
-
-
EVENTOUT
PD9
-
-
-
-
FMC_D14
SAI2_MCLK_
A
-
EVENTOUT
PD10
-
TSC_G6_IO1
-
-
FMC_D15
SAI2_SCK_A
-
EVENTOUT
PD11
-
TSC_G6_IO2
-
-
FMC_A16
SAI2_SD_A
LPTIM2_ETR
EVENTOUT
PD12
-
TSC_G6_IO3
-
-
FMC_A17
SAI2_FS_A
LPTIM2_IN1
EVENTOUT
PD13
-
TSC_G6_IO4
-
-
FMC_A18
-
LPTIM2_OUT
EVENTOUT
PD14
-
-
-
-
FMC_D0
-
-
EVENTOUT
PD15
-
-
-
-
FMC_D1
-
-
EVENTOUT
Port
DocID027692 Rev 2
Port D
73/193
Pinouts and pin description
AF8
STM32L475xx
Table 17. Alternate function AF8 to AF15 (for AF0 to AF7 see Table 16) (continued)
AF9
AF10
AF11
AF12
AF13
AF14
AF15
UART4,
UART5,
LPUART1
CAN1, TSC
OTG_FS, QUADSPI
-
SDMMC1, COMP1,
COMP2, FMC,
SWPMI1
SAI1, SAI2
TIM2, TIM15,
TIM16, TIM17,
LPTIM2
EVENTOUT
PE0
-
-
-
-
FMC_NBL0
-
TIM16_CH1
EVENTOUT
PE1
-
-
-
-
FMC_NBL1
-
TIM17_CH1
EVENTOUT
PE2
-
TSC_G7_IO1
-
-
FMC_A23
SAI1_MCLK_
A
-
EVENTOUT
PE3
-
TSC_G7_IO2
-
-
FMC_A19
SAI1_SD_B
-
EVENTOUT
PE4
-
TSC_G7_IO3
-
-
FMC_A20
SAI1_FS_A
-
EVENTOUT
PE5
-
TSC_G7_IO4
-
-
FMC_A21
SAI1_SCK_A
-
EVENTOUT
PE6
-
-
-
-
FMC_A22
SAI1_SD_A
-
EVENTOUT
PE7
-
-
-
-
FMC_D4
SAI1_SD_B
-
EVENTOUT
PE8
-
-
-
-
FMC_D5
SAI1_SCK_B
-
EVENTOUT
PE9
-
-
-
-
FMC_D6
SAI1_FS_B
-
EVENTOUT
PE10
-
TSC_G5_IO1
QUADSPI_CLK
-
FMC_D7
SAI1_MCLK_
B
-
EVENTOUT
PE11
-
TSC_G5_IO2
QUADSPI_NCS
-
FMC_D8
-
-
EVENTOUT
PE12
-
TSC_G5_IO3
QUADSPI_BK1_IO0
-
FMC_D9
-
-
EVENTOUT
PE13
-
TSC_G5_IO4
QUADSPI_BK1_IO1
-
FMC_D10
-
-
EVENTOUT
PE14
-
-
QUADSPI_BK1_IO2
-
FMC_D11
-
-
EVENTOUT
PE15
-
-
QUADSPI_BK1_IO3
-
FMC_D12
-
-
EVENTOUT
PH0
-
-
-
-
-
-
-
EVENTOUT
PH1
-
-
-
-
-
-
-
EVENTOUT
Port
DocID027692 Rev 2
Port E
Port H
STM32L475xx
AF8
Pinouts and pin description
74/193
Table 17. Alternate function AF8 to AF15 (for AF0 to AF7 see Table 16) (continued)
STM32L475xx
5
Memory mapping
Memory mapping
Figure 7. STM32L475 memory map
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DocID027692 Rev 2
75/193
79
Memory mapping
STM32L475xx
Table 18. STM32L475xx memory map and peripheral register boundary
addresses (1)
Bus
AHB3
AHB2
-
AHB1
76/193
Boundary address
Size
(bytes)
Peripheral
0xA000 1000 - 0xA000 13FF
1 KB
QUADSPI
0xA000 0000 - 0xA000 0FFF
4 KB
FMC
0x5006 0800 - 0x5006 0BFF
1 KB
RNG
0x5004 0400 - 0x5006 07FF
129 KB
0x5004 0000 - 0x5004 03FF
1 KB
ADC
0x5000 0000 - 0x5003 FFFF
16 KB
OTG_FS
0x4800 2000 - 0x4FFF FFFF
~127 MB
Reserved
0x4800 1C00 - 0x4800 1FFF
1 KB
GPIOH
0x4800 1800 - 0x4800 1BFF
1 KB
GPIOG
0x4800 1400 - 0x4800 17FF
1 KB
GPIOF
0x4800 1000 - 0x4800 13FF
1 KB
GPIOE
0x4800 0C00 - 0x4800 0FFF
1 KB
GPIOD
0x4800 0800 - 0x4800 0BFF
1 KB
GPIOC
0x4800 0400 - 0x4800 07FF
1 KB
GPIOB
0x4800 0000 - 0x4800 03FF
1 KB
GPIOA
0x4002 4400 - 0x47FF FFFF
~127 MB
0x4002 4000 - 0x4002 43FF
1 KB
TSC
0x4002 3400 - 0x4002 3FFF
1 KB
Reserved
0x4002 3000 - 0x4002 33FF
1 KB
CRC
0x4002 2400 - 0x4002 2FFF
3 KB
Reserved
0x4002 2000 - 0x4002 23FF
1 KB
FLASH registers
0x4002 1400 - 0x4002 1FFF
3 KB
Reserved
0x4002 1000 - 0x4002 13FF
1 KB
RCC
0x4002 0800 - 0x4002 0FFF
2 KB
Reserved
0x4002 0400 - 0x4002 07FF
1 KB
DMA2
0x4002 0000 - 0x4002 03FF
1 KB
DMA1
DocID027692 Rev 2
Reserved
Reserved
STM32L475xx
Memory mapping
Table 18. STM32L475xx memory map and peripheral register boundary
addresses (continued)(1)
Bus
APB2
APB2
Boundary address
Size
(bytes)
Peripheral
0x4001 6400 - 0x4001 FFFF
39 KB
Reserved
0x4001 6000 - 0x4000 63FF
1 KB
DFSDM
0x4001 5C00 - 0x4000 5FFF
1 KB
Reserved
0x4001 5800 - 0x4000 5BFF
1 KB
SAI2
0x4001 5400 - 0x4000 57FF
1 KB
SAI1
0x4001 4C00 - 0x4000 53FF
2 KB
Reserved
0x4001 4800 - 0x4001 4BFF
1 KB
TIM17
0x4001 4400 - 0x4001 47FF
1 KB
TIM16
0x4001 4000 - 0x4001 43FF
1 KB
TIM15
0x4001 3C00 - 0x4001 3FFF
1 KB
Reserved
0x4001 3800 - 0x4001 3BFF
1 KB
USART1
0x4001 3400 - 0x4001 37FF
1 KB
TIM8
0x4001 3000 - 0x4001 33FF
1 KB
SPI1
0x4001 2C00 - 0x4001 2FFF
1 KB
TIM1
0x4001 2800 - 0x4001 2BFF
1 KB
SDMMC1
0x4001 2000 - 0x4001 27FF
2 KB
Reserved
0x4001 1C00 - 0x4001 1FFF
1 KB
FIREWALL
0x4001 0800- 0x4001 1BFF
5 KB
Reserved
0x4001 0400 - 0x4001 07FF
1 KB
EXTI
0x4001 0200 - 0x4001 03FF
0x4001 0030 - 0x4001 01FF
0x4001 0000 - 0x4001 002F
DocID027692 Rev 2
COMP
1 KB
VREFBUF
SYSCFG
77/193
79
Memory mapping
STM32L475xx
Table 18. STM32L475xx memory map and peripheral register boundary
addresses (continued)(1)
Bus
APB1
78/193
Boundary address
Size
(bytes)
Peripheral
0x4000 9800 - 0x4000 FFFF
26 KB
Reserved
0x4000 9400 - 0x4000 97FF
1 KB
LPTIM2
0x4000 8C00 - 0x4000 93FF
2 KB
Reserved
0x4000 8800 - 0x4000 8BFF
1 KB
SWPMI1
0x4000 8400 - 0x4000 87FF
1 KB
Reserved
0x4000 8000 - 0x4000 83FF
1 KB
LPUART1
0x4000 7C00 - 0x4000 7FFF
1 KB
LPTIM1
0x4000 7800 - 0x4000 7BFF
1 KB
OPAMP
0x4000 7400 - 0x4000 77FF
1 KB
DAC
0x4000 7000 - 0x4000 73FF
1 KB
PWR
0x4000 6800 - 0x4000 6FFF
1 KB
Reserved
0x4000 6400 - 0x4000 67FF
1 KB
CAN1
0x4000 6000 - 0x4000 63FF
1 KB
Reserved
0x4000 5C00- 0x4000 5FFF
1 KB
I2C3
0x4000 5800 - 0x4000 5BFF
1 KB
I2C2
0x4000 5400 - 0x4000 57FF
1 KB
I2C1
0x4000 5000 - 0x4000 53FF
1 KB
UART5
0x4000 4C00 - 0x4000 4FFF
1 KB
UART4
0x4000 4800 - 0x4000 4BFF
1 KB
USART3
0x4000 4400 - 0x4000 47FF
1 KB
USART2
DocID027692 Rev 2
STM32L475xx
Memory mapping
Table 18. STM32L475xx memory map and peripheral register boundary
addresses (continued)(1)
Bus
APB1
Boundary address
Size
(bytes)
Peripheral
0x4000 4000 - 0x4000 43FF
1 KB
Reserved
0x4000 3C00 - 0x4000 3FFF
1 KB
SPI3
0x4000 3800 - 0x4000 3BFF
1 KB
SPI2
0x4000 3400 - 0x4000 37FF
1 KB
Reserved
0x4000 3000 - 0x4000 33FF
1 KB
IWDG
0x4000 2C00 - 0x4000 2FFF
1 KB
WWDG
0x4000 2800 - 0x4000 2BFF
1 KB
RTC
0x4000 1800 - 0x4000 27FF
4 KB
Reserved
0x4000 1400 - 0x4000 17FF
1 KB
TIM7
0x4000 1000 - 0x4000 13FF
1 KB
TIM6
0x4000 0C00- 0x4000 0FFF
1 KB
TIM5
0x4000 0800 - 0x4000 0BFF
1 KB
TIM4
0x4000 0400 - 0x4000 07FF
1 KB
TIM3
0x4000 0000 - 0x4000 03FF
1 KB
TIM2
1. The gray color is used for reserved boundary addresses.
DocID027692 Rev 2
79/193
79
Electrical characteristics
STM32L475xx
6
Electrical characteristics
6.1
Parameter conditions
Unless otherwise specified, all voltages are referenced to VSS.
6.1.1
Minimum and maximum values
Unless otherwise specified, the minimum and maximum values are guaranteed in the worst
conditions of ambient temperature, supply voltage and frequencies by tests in production on
100% of the devices with an ambient temperature at TA = 25 °C and TA = TAmax (given by
the selected temperature range).
Data based on characterization results, design simulation and/or technology characteristics
are indicated in the table footnotes and are not tested in production. Based on
characterization, the minimum and maximum values refer to sample tests and represent the
mean value plus or minus three times the standard deviation (mean ±3σ).
6.1.2
Typical values
Unless otherwise specified, typical data are based on TA = 25 °C, VDD = VDDA = 3 V. They
are given only as design guidelines and are not tested.
Typical ADC accuracy values are determined by characterization of a batch of samples from
a standard diffusion lot over the full temperature range, where 95% of the devices have an
error less than or equal to the value indicated (mean ±2σ).
6.1.3
Typical curves
Unless otherwise specified, all typical curves are given only as design guidelines and are
not tested.
6.1.4
Loading capacitor
The loading conditions used for pin parameter measurement are shown in Figure 8.
6.1.5
Pin input voltage
The input voltage measurement on a pin of the device is described in Figure 9.
Figure 8. Pin loading conditions
Figure 9. Pin input voltage
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9,1
069
80/193
DocID027692 Rev 2
069
STM32L475xx
6.1.6
Electrical characteristics
Power supply scheme
Figure 10. Power supply scheme
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Caution:
Each power supply pair (VDD/VSS, VDDA/VSSA etc.) must be decoupled with filtering ceramic
capacitors as shown above. These capacitors must be placed as close as possible to, or
below, the appropriate pins on the underside of the PCB to ensure the good functionality of
the device.
DocID027692 Rev 2
81/193
181
Electrical characteristics
6.1.7
STM32L475xx
Current consumption measurement
Figure 11. Current consumption measurement scheme
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6.2
Absolute maximum ratings
Stresses above the absolute maximum ratings listed in Table 19: Voltage characteristics,
Table 20: Current characteristics and Table 21: Thermal characteristics may cause
permanent damage to the device. These are stress ratings only and functional operation of
the device at these conditions is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Table 19. Voltage characteristics(1)
Symbol
VDDX - VSS
VIN(2)
Ratings
Min
Max
Unit
-0.3
4.0
V
Input voltage on FT_xxx pins
VSS-0.3
min (VDD, VDDA, VDDUSB)
+ 4.0(3)(4)
Input voltage on TT_xx pins
VSS-0.3
4.0
Input voltage on BOOT0 pin
VSS
9.0
VSS-0.3
4.0
Variations between different VDDX power
pins of the same domain
-
50
mV
Variations between all the different ground
pins(5)
-
50
mV
External main supply voltage (including
VDD, VDDA, VDDUSB, VBAT)
Input voltage on any other pins
|∆VDDx|
|VSSx-VSS|
82/193
DocID027692 Rev 2
V
STM32L475xx
Electrical characteristics
1. All main power (VDD, VDDA, VDDUSB, VBAT) and ground (VSS, VSSA) pins must always be connected to the external power
supply, in the permitted range.
2. VIN maximum must always be respected. Refer to Table 20: Current characteristics for the maximum allowed injected
current values.
3. This formula has to be applied only on the power supplies related to the IO structure described in the pin definition table.
4. To sustain a voltage higher than 4 V the internal pull-up/pull-down resistors must be disabled.
5. Include VREF- pin.
Table 20. Current characteristics
Symbol
Ratings
Max
∑IVDD
Total current into sum of all VDD power lines (source)(1)
150
∑IVSS
(sink)(1)
150
Total current out of sum of all VSS ground lines
IVDD(PIN)
Maximum current into each VDD power pin (source)(1)
100
IVSS(PIN)
Maximum current out of each VSS ground pin (sink)(1)
100
Output current sunk by any I/O and control pin except FT_f
20
Output current sunk by any FT_f pin
20
Output current sourced by any I/O and control pin
20
IIO(PIN)
∑IIO(PIN)
IINJ(PIN)(3)
∑|IINJ(PIN)|
Total output current sunk by sum of all I/Os and control pins(2)
Total output current sourced by sum of all I/Os and control pins
Unit
mA
100
(2)
100
Injected current on FT_xxx, TT_xx, RST and B pins, except PA4,
PA5
-5/+0(4)
Injected current on PA4, PA5
-5/0
Total injected current (sum of all I/Os and control pins)(5)
25
1. All main power (VDD, VDDA, VDDUSB, VBAT) and ground (VSS, VSSA) pins must always be connected to the external power
supplies, in the permitted range.
2. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be
sunk/sourced between two consecutive power supply pins referring to high pin count QFP packages.
3. Positive injection (when VIN > VDDIOx) is not possible on these I/Os and does not occur for input voltages lower than the
specified maximum value.
4. A negative injection is induced by VIN < VSS. IINJ(PIN) must never be exceeded. Refer also to Table 19: Voltage
characteristics for the minimum allowed input voltage values.
5. When several inputs are submitted to a current injection, the maximum ∑|IINJ(PIN)| is the absolute sum of the negative
injected currents (instantaneous values).
Table 21. Thermal characteristics
Symbol
TSTG
TJ
Ratings
Storage temperature range
Maximum junction temperature
DocID027692 Rev 2
Value
Unit
–65 to +150
°C
150
°C
83/193
181
Electrical characteristics
STM32L475xx
6.3
Operating conditions
6.3.1
General operating conditions
Table 22. General operating conditions
Symbol
Parameter
Conditions
Min
Max
fHCLK
Internal AHB clock frequency
-
0
80
fPCLK1
Internal APB1 clock frequency
-
0
80
fPCLK2
Internal APB2 clock frequency
-
0
80
Standard operating voltage
-
VDD
VDDA
Analog supply voltage
1.71
VBAT
VDDUSB USB supply voltage
TJ
1.55
3.6
V
3.0
3.6
0
3.6
-0.3
VDDIOx+0.3
0
9
-0.3
MIN(MIN(VDD, VDDA,
VDDUSB)+3.6 V,
5.5 V)(2)(3)
1.8
VREFBUF used
2.4
USB used
USB not used
0
I/O input voltage
All I/O except BOOT0 and TT_xx
TA
V
DAC or OPAMP used
BOOT0
PD
3.6
1.62
TT_xx I/O
VIN
V
ADC or COMP used
Backup operating voltage
Power dissipation at
TA = 85 °C for suffix 6
or
TA = 105 °C for suffix 7(4)
LQFP100
-
-
476
LQFP64
-
-
444
Ambient temperature for the
suffix 6 version
Maximum power dissipation
–40
85
Low-power dissipation(5)
–40
105
Ambient temperature for the
suffix 7 version
Maximum power dissipation
–40
105
–40
125
Ambient temperature for the
suffix 3 version
Maximum power dissipation
–40
125
Low-power dissipation(5)
–40
130
Suffix 6 version
–40
105
Suffix 7 version
–40
125
Suffix 3 version
–40
130
Junction temperature range
Low-power dissipation
(5)
MHz
3.6
(1)
ADC, DAC, OPAMP, COMP,
VREFBUF not used
Unit
V
V
mW
1. When RESET is released functionality is guaranteed down to VBOR0 Min.
2. This formula has to be applied only on the power supplies related to the IO structure described by the pin definition table.
Maximum I/O input voltage is the smallest value between MIN(VDD, VDDA, VDDUSB)+3.6 V and 5.5V.
3. For operation with voltage higher than Min (VDD, VDDA, VDDUSB) +0.3 V, the internal Pull-up and Pull-Down resistors must
be disabled.
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°C
°C
STM32L475xx
Electrical characteristics
4. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Section 7.3: Thermal characteristics).
5. In low-power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 7.3:
Thermal characteristics).
6.3.2
Operating conditions at power-up / power-down
The parameters given in Table 23 are derived from tests performed under the ambient
temperature condition summarized in Table 22.
Table 23. Operating conditions at power-up / power-down
Symbol
Parameter
VDD rise time rate
tVDD
VDDA rise time rate
Max
0
∞
10
∞
0
∞
10
∞
0
∞
10
∞
-
VDDA fall time rate
VDDUSB rise time rate
tVDDUSB
Min
-
VDD fall time rate
tVDDA
6.3.3
Conditions
VDDUSB fall time rate
-
Unit
µs/V
µs/V
µs/V
Embedded reset and power control block characteristics
The parameters given in Table 24 are derived from tests performed under the ambient
temperature conditions summarized in Table 22: General operating conditions.
Table 24. Embedded reset and power control block characteristics
Symbol
tRSTTEMPO(2)
Parameter
Reset temporization after
BOR0 is detected
VBOR0(2)
Brown-out reset threshold 0
VBOR1
Brown-out reset threshold 1
VBOR2
Brown-out reset threshold 2
VBOR3
Brown-out reset threshold 3
VBOR4
Brown-out reset threshold 4
VPVD0
Programmable voltage
detector threshold 0
VPVD1
PVD threshold 1
Conditions(1)
Min
Typ
Max
Unit
-
250
400
μs
Rising edge
1.62
1.66
1.7
Falling edge
1.6
1.64
1.69
Rising edge
2.06
2.1
2.14
Falling edge
1.96
2
2.04
Rising edge
2.26
2.31
2.35
Falling edge
2.16
2.20
2.24
Rising edge
2.56
2.61
2.66
Falling edge
2.47
2.52
2.57
Rising edge
2.85
2.90
2.95
Falling edge
2.76
2.81
2.86
Rising edge
2.1
2.15
2.19
Falling edge
2
2.05
2.1
Rising edge
2.26
2.31
2.36
Falling edge
2.15
2.20
2.25
VDD rising
DocID027692 Rev 2
V
V
V
V
V
V
V
85/193
181
Electrical characteristics
STM32L475xx
Table 24. Embedded reset and power control block characteristics (continued)
Conditions(1)
Min
Typ
Max
Rising edge
2.41
2.46
2.51
Falling edge
2.31
2.36
2.41
Rising edge
2.56
2.61
2.66
Falling edge
2.47
2.52
2.57
Rising edge
2.69
2.74
2.79
Falling edge
2.59
2.64
2.69
Rising edge
2.85
2.91
2.96
Falling edge
2.75
2.81
2.86
Rising edge
2.92
2.98
3.04
Falling edge
2.84
2.90
2.96
Hysteresis in
continuous
Hysteresis voltage of BORH0 mode
-
20
-
Hysteresis in
other mode
-
30
-
Symbol
Parameter
VPVD2
PVD threshold 2
VPVD3
PVD threshold 3
VPVD4
PVD threshold 4
VPVD5
PVD threshold 5
VPVD6
PVD threshold 6
Vhyst_BORH0
Unit
V
V
V
V
V
mV
Hysteresis voltage of BORH
(except BORH0) and PVD
-
-
100
-
mV
BOR(3) (except BOR0) and
IDD
(BOR_PVD)(2) PVD consumption from VDD
-
-
1.1
1.6
µA
-
1.18
1.22
1.26
V
Vhyst_BOR_PVD
VPVM1
VDDUSB peripheral voltage
monitoring
VPVM3
VDDA peripheral voltage
monitoring
Rising edge
1.61
1.65
1.69
Falling edge
1.6
1.64
1.68
VPVM4
VDDA peripheral voltage
monitoring
Rising edge
1.78
1.82
1.86
Falling edge
1.77
1.81
1.85
V
V
Vhyst_PVM3
PVM3 hysteresis
-
-
10
-
mV
Vhyst_PVM4
PVM4 hysteresis
-
-
10
-
mV
IDD
PVM1 and PVM2
(PVM1/PVM2)
consumption from VDD
(2)
-
-
0.2
-
µA
IDD
PVM3 and PVM4
(PVM3/PVM4)
consumption from VDD
(2)
-
-
2
-
µA
1. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power
sleep modes.
2. Guaranteed by design.
3. BOR0 is enabled in all modes (except shutdown) and its consumption is therefore included in the supply
current characteristics tables.
86/193
DocID027692 Rev 2
STM32L475xx
6.3.4
Electrical characteristics
Embedded voltage reference
The parameters given in Table 25 are derived from tests performed under the ambient
temperature and supply voltage conditions summarized in Table 22: General operating
conditions.
Table 25. Embedded internal voltage reference
Symbol
VREFINT
Parameter
Conditions
Internal reference voltage
–40 °C < TA < +130 °C
Min
Typ
Max
Unit
1.182
1.212
1.232
V
tS_vrefint (1)
ADC sampling time when
reading the internal reference
voltage
-
4(2)
-
-
µs
tstart_vrefint
Start time of reference voltage
buffer when ADC is enable
-
-
8
12(2)
µs
-
-
12.5
20(2)
µA
VREFINT buffer consumption
from VDD when converted by
IDD(VREFINTBUF)
ADC
Internal reference voltage
spread over the temperature
range
VDD = 3 V
-
5
7.5(2)
mV
TCoeff
Average temperature
coefficient
–40°C < TA < +130°C
-
30
50(2)
ppm/°C
ACoeff
Long term stability
1000 hours, T = 25°C
-
-
TBD(2)
ppm
-
250
1200(2)
ppm/V
24
25
26
49
50
51
74
75
76
∆VREFINT
VDDCoeff
Average voltage coefficient
VREFINT_DIV1
1/4 reference voltage
VREFINT_DIV2
1/2 reference voltage
VREFINT_DIV3
3/4 reference voltage
3.0 V < VDD < 3.6 V
-
%
VREFINT
1. The shortest sampling time can be determined in the application by multiple iterations.
2. Guaranteed by design.
DocID027692 Rev 2
87/193
181
Electrical characteristics
STM32L475xx
Figure 12. VREFINT versus temperature
9
0HDQ
88/193
0LQ
DocID027692 Rev 2
0D[
ƒ&
06Y9
STM32L475xx
6.3.5
Electrical characteristics
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, ambient temperature, I/O pin loading, device software configuration,
operating frequencies, I/O pin switching rate, program location in memory and executed
binary code.
The current consumption is measured as described in Figure 11: Current consumption
measurement scheme.
Typical and maximum current consumption
The MCU is placed under the following conditions:
•
All I/O pins are in analog input mode
•
All peripherals are disabled except when explicitly mentioned
•
The Flash memory access time is adjusted with the minimum wait states number,
depending on the fHCLK frequency (refer to the table “Number of wait states according
to CPU clock (HCLK) frequency” available in the RM0395 reference manual).
•
When the peripherals are enabled fPCLK = fHCLK
The parameters given in Table 26 to Table 39 are derived from tests performed under
ambient temperature and supply voltage conditions summarized in Table 22: General
operating conditions.
DocID027692 Rev 2
89/193
181
running from Flash, ART enable (Cache ON Prefetch OFF)
Conditions
Symbol
Parameter
-
Voltage
scaling
Unit
55 °C
85 °C
3.20
3.37
3.51
3.93
4.76
2.49
2.01
2.16
2.30
2.72
3.34
1.29
1.62
1.10
1.17
1.31
1.73
2.56
0.69
0.85
1.18
0.61
0.70
0.89
1.24
1.95
0.37
0.47
0.64
0.96
0.37
0.46
0.64
0.98
1.71
0.23
0.26
0.36
0.53
0.85
0.27
0.33
0.50
0.86
1.57
100 kHz
0.14
0.17
0.27
0.43
0.75
0.17
0.21
0.38
0.74
1.44
80 MHz
10.2
10.3
10.5
10.7
11.1
11.22
11.8
12.1
12.5
13.3
72 MHz
9.24
9.31
9.47
9.69
10.1
10.16
10.7
11.0
11.4
12.2
64 MHz
8.25
8.32
8.46
8.68
9.09
9.08
9.6
9.9
10.3
11.1
Range 1 48 MHz
6.28
6.35
6.5
6.72
7.11
6.91
7.3
7.6
8.0
8.8
32 MHz
4.24
4.30
4.44
4.65
5.04
4.66
4.97
5.26
5.67
6.51
24 MHz
3.21
3.27
3.4
3.61
3.98
3.53
3.76
4.05
4.46
5.30
16 MHz
2.19
2.24
2.36
2.56
2.94
2.41
2.66
2.95
3.16
3.99
2 MHz
272
303
413
592
958
330
393
579
954
1704
1 MHz
154
184
293
473
835
195
265
457
822
1572
400 kHz
78
108
217
396
758
110
180
380
755
1505
100 kHz
42
73
182
360
723
75
138
331
706
1456
Range 2
DocID027692 Rev 2
IDD(Run)
MAX(1)
TYP
fHCLK = fHSE up to
48MHz included,
Supply
bypass mode
current in
PLL ON above
Run mode
48 MHz all
peripherals disable
Supply
current in fHCLK = fMSI
IDD(LPRun)
Low-power all peripherals disable
run mode
25 °C 55 °C
85 °C
26 MHz
2.88
2.93
3.05
3.23
3.58
16 MHz
1.83
1.87
1.98
2.16
8 MHz
0.98
1.02
1.12
4 MHz
0.55
0.59
2 MHz
0.34
1 MHz
fHCLK
105 °C 125 °C
mA
µA
STM32L475xx
1. Guaranteed by characterization results, unless otherwise specified.
105 °C 125 °C 25 °C
Electrical characteristics
90/193
Table 26. Current consumption in Run and Low-power run modes, code with data processing
running from Flash, ART disable
Conditions
Symbol
Parameter
-
Voltage
scaling
Range 2
IDD(Run)
DocID027692 Rev 2
fHCLK = fHSE up to
48MHz included,
Supply
bypass mode
current in
PLL ON above
Run mode
48 MHz all
peripherals disable
MAX(1)
TYP
Unit
25 °C 55 °C
85 °C
26 MHz
3.15
3.19
3.31
3.50
3.85
16 MHz
2.24
2.28
2.39
2.57
8 MHz
1.26
1.29
1.40
1.57
4 MHz
0.71
0.75
0.85
2 MHz
0.42
0.45
1 MHz
0.27
0.30
100 kHz
0.14
80 MHz
10.0
fHCLK
105 °C 125 °C 25 °C
55 °C
85 °C
105 °C 125 °C
3.47
3.70
3.84
4.26
4.88
2.90
2.46
2.60
2.74
3.16
3.78
1.89
1.40
1.50
1.64
2.06
2.68
1.02
1.34
0.79
0.88
1.06
1.38
2.21
0.55
0.72
1.04
0.46
0.55
0.73
1.09
1.88
0.40
0.57
0.89
0.30
0.38
0.57
0.90
1.61
0.17
0.27
0.43
0.75
0.17
0.22
0.40
0.74
1.44
10.1
10.3
10.6
11.0
11.00
11.35
11.64
12.26
13.10
72 MHz
9.06
9.13
9.28
9.51
9.92
9.97
10.36
10.65
11.06
11.69
64 MHz
8.96
9.04
9.22
9.48
9.92
9.86
10.25
10.54
10.95
11.79
Range 1 48 MHz
7.64
7.72
7.91
8.17
8.62
8.40
8.76
8.90
9.52
10.36
32 MHz
5.49
5.57
5.74
5.98
6.40
6.04
6.40
6.69
7.10
7.94
24 MHz
4.16
4.22
4.36
4.57
4.96
4.60
4.86
5.15
5.56
6.19
16 MHz
2.93
2.99
3.13
3.35
3.75
3.22
3.43
3.72
4.13
4.97
2 MHz
358
392
503
683
1050
435
501
694
1069
1819
1 MHz
197
230
340
519
880
245
312
512
887
1637
400 kHz
97
126
235
414
778
130
202
402
777
1527
100 kHz
47
77
186
365
726
85
147
347
711
1472
Supply
current in fHCLK = fMSI
IDD(LPRun)
Low-power all peripherals disable
run
mA
µA
91/193
Electrical characteristics
1. Guaranteed by characterization results, unless otherwise specified.
STM32L475xx
Table 27. Current consumption in Run and Low-power run modes, code with data processing
Conditions
Symbol
Parameter
-
Voltage
scaling
Range 2
IDD(Run)
Supply
current in
Run mode
DocID027692 Rev 2
fHCLK = fHSE up to
48MHz included,
bypass mode
PLL ON above
48 MHz all
peripherals disable
Range 1
IDD(LPRun)
Supply
current in
low-power
run mode
fHCLK = fMSI
all peripherals disable
FLASH in power-down
MAX(1)
TYP
fHCLK
25 °C
55 °C
85 °C
105
°C
125
°C
25 °C
55 °C
85 °C
105
°C
125
°C
26 MHz
2.88
2.94
3.05
3.23
3.58
3.18
3.26
3.40
4.02
4.65
16 MHz
1.83
1.87
1.98
2.15
2.50
2.01
2.16
2.30
2.72
3.34
8 MHz
0.97
1.00
1.11
1.27
1.62
1.07
1.16
1.32
1.73
2.36
4 MHz
0.54
0.57
0.67
0.84
1.18
0.59
0.69
0.88
1.23
1.96
2 MHz
0.33
0.36
0.46
0.62
0.96
0.37
0.45
0.63
0.98
1.70
1 MHz
0.22
0.25
0.35
0.51
0.85
0.25
0.33
0.50
0.86
1.57
100 kHz
0.12
0.15
0.25
0.41
0.75
0.15
0.21
0.39
0.74
1.45
80 MHz
10.2
10.3
10.5
10.7
11.1
11.22
11.57
11.86
12.07
13.11
72 MHz
9.25
9.31
9.46
9.68
10.1
10.18
10.41
10.55
10.76
11.80
64 MHz
8.25
8.31
8.46
8.67
9.08
9.08
9.37
9.66
9.87
10.91
48 MHz
6.26
6.33
6.48
6.69
7.11
6.89
7.11
7.25
7.67
8.50
32 MHz
4.22
4.28
4.42
4.63
5.03
4.64
4.86
5.15
5.56
6.19
24 MHz
3.20
3.25
3.38
3.59
3.99
3.52
3.70
3.84
4.26
5.09
16 MHz
2.18
2.22
2.35
2.55
2.94
2.40
2.55
2.84
3.25
4.09
2 MHz
242
275
384
562
924
300
380
573
927
1677
1 MHz
130
162
269
445
809
180
243
435
810
1560
400 kHz
61
90
197
374
734
95
160
353
728
1478
100 kHz
26
56
163
339
702
55
122
314
679
1429
Unit
Electrical characteristics
92/193
Table 28. Current consumption in Run and Low-power run modes, code with data processing
running from SRAM1
mA
µA
1. Guaranteed by characterization results, unless otherwise specified.
STM32L475xx
STM32L475xx
Electrical characteristics
Table 29. Typical current consumption in Run and Low-power run modes, with different codes
running from Flash, ART enable (Cache ON Prefetch OFF)
Conditions
-
IDD(Run)
Supply
current in
Run mode
fHCLK = fHSE up
to 48 MHz
included, bypass
mode PLL ON
above 48 MHz
all peripherals
disable
Voltage
scaling
Range 2
fHCLK = 26 MHz
Parameter
Unit
25 °C
25 °C
Reduced code(1)
2.9
111
Coremark
3.1
118
Dhrystone 2.1
3.1
Fibonacci
2.9
112
2.8
108
Reduced code
10.2
127
Coremark
10.9
136
Dhrystone 2.1
11.0
Fibonacci
10.5
131
9.9
124
Reduced code
272
136
Coremark
291
145
Dhrystone 2.1
302
Fibonacci
269
135
While(1)
269
135
While(1)
While(1)
(1)
Supply
current in fHCLK = fMSI = 2 MHz
IDD(LPRun)
Low-power all peripherals disable
run
TYP
Unit
Code
(1)
Range 1
fHCLK = 80 MHz
Symbol
TYP
mA
mA
µA
119
137
151
µA/MHz
µA/MHz
µA/MHz
1. Reduced code used for characterization results provided in Table 26, Table 27, Table 28.
DocID027692 Rev 2
93/193
181
Electrical characteristics
STM32L475xx
Table 30. Typical current consumption in Run and Low-power run modes, with different codes
running from Flash, ART disable
Conditions
Parameter
-
IDD(Run)
Supply
current in
Run mode
fHCLK = fHSE up to
48 MHz included,
bypass mode
PLL ON above
48 MHz
all peripherals
disable
Supply
current in fHCLK = fMSI = 2 MHz
IDD(LPRun)
Low-power all peripherals disable
run
TYP
Unit
Voltage
scaling
Range 1
Range 2
fHCLK = 80 MHz fHCLK = 26 MHz
Symbol
TYP
Code
Unit
25 °C
25 °C
Reduced code(1)
3.1
119
Coremark
2.9
111
Dhrystone 2.1
2.8
Fibonacci
2.7
104
While(1)
2.6
100
Reduced code
10.0
125
Coremark
9.4
(1)
Dhrystone 2.1
9.1
Fibonacci
9.0
mA
111
µA/MHz
117
mA
114
µA/MHz
112
While(1)
9.3
116
Reduced code(1)
358
179
Coremark
392
Dhrystone 2.1
390
196
Fibonacci
385
192
While(1)
385
192
µA
195
µA/MHz
1. Reduced code used for characterization results provided in Table 26, Table 27, Table 28.
Table 31. Typical current consumption in Run and Low-power run modes, with different codes
running from SRAM1
Conditions
Parameter
-
IDD(Run)
fHCLK = fHSE up to
48 MHz included,
Supply
bypass mode
current in PLL ON above
Run mode 48 MHz all
peripherals
disable
Voltage
scaling
Range 1
Range 2
fHCLK = 80 MHz fHCLK = 26 MHz
Symbol
Supply
current in fHCLK = fMSI = 2 MHz
IDD(LPRun)
Low-power all peripherals disable
run
TYP
Unit
Code
Unit
25 °C
25 °C
2.9
111
Reduced code(1)
Coremark
2.9
Dhrystone 2.1
2.9
111
mA
111
Fibonacci
2.6
100
While(1)
2.6
100
Reduced code(1)
10.2
127
Coremark
10.4
Dhrystone 2.1
10.3
Fibonacci
9.6
129
µA/MHz
120
9.3
116
Reduced code(1)
242
121
Coremark
242
121
µA
Dhrystone 2.1
242
Fibonacci
225
112
While(1)
242
121
DocID027692 Rev 2
µA/MHz
130
mA
While(1)
1. Reduced code used for characterization results provided in Table 26, Table 27, Table 28.
94/193
TYP
121
µA/MHz
Conditions
Symbol
Parameter
-
Voltage
scaling
Unit
fHCLK
26 MHz
IDD(Sleep)
DocID027692 Rev 2
IDD(LPSleep)
25 °C 55 °C
85 °C
0.92
1.07
0.96
105 °C 125 °C 25 °C
1.25
1.59
1.012
55 °C
85 °C
1.14
1.36
105 °C 125 °C
1.77
2.40
16 MHz
0.61
0.65
0.75
0.92
1.27
0.69
0.78
0.97
1.32
2.04
8 MHz
0.36
0.40
0.50
0.66
1.01
0.42
0.50
0.68
1.03
1.75
4 MHz
0.24
0.27
0.37
0.53
0.87
0.28
0.36
0.54
0.89
1.60
2 MHz
0.18
0.20
0.30
0.47
0.81
0.215
0.29
0.46
0.82
1.53
1 MHz
0.15
0.17
0.27
0.43
0.77
0.18
0.25
0.44
0.78
1.49
100 kHz
0.12
0.14
0.24
0.41
0.74
0.15
0.21
0.39
0.74
1.44
80 MHz
2.96
3.00
3.13
3.33
3.73
3.26
3.43
3.72
4.13
4.97
72 MHz
2.69
2.73
2.85
3.05
3.45
2.96
3.21
3.50
3.71
4.54
64 MHz
2.41
2.45
2.58
2.77
3.17
2.65
2.88
3.17
3.58
4.21
Range 1 48 MHz
1.88
1.93
2.07
2.27
2.67
2.10
2.27
2.41
2.83
3.66
32 MHz
1.30
1.35
1.48
1.68
2.08
1.43
1.56
1.85
2.26
3.10
24 MHz
1.01
1.05
1.17
1.37
1.76
1.11
1.23
1.52
1.93
2.77
16 MHz
0.71
0.75
0.87
1.07
1.45
0.80
0.90
1.19
1.60
2.44
2 MHz
96
126
233
412
775
130
202
402
777
1527
1 MHz
65
94
202
381
742
95
166
358
733
1483
400 kHz
43
73
181
359
718
75
138
331
706
1456
100 kHz
33
63
171
348
708
65
128
322
691
1441
Range 2
Supply
current in
sleep
mode,
MAX(1)
TYP
fHCLK = fHSE up
to 48 MHz
included, bypass
mode
pll ON above
48 MHz all
peripherals
disable
Supply
current in
=f
f
low-power HCLK MSI
all peripherals disable
sleep
mode
mA
µA
95/193
Electrical characteristics
1. Guaranteed by characterization results, unless otherwise specified.
STM32L475xx
Table 32. Current consumption in Sleep and Low-power sleep modes, Flash ON
Conditions
Symbol
Parameter
Voltage
scaling
-
IDD(LPSleep
)
Supply current
in low-power
sleep mode
fHCLK = fMSI
all peripherals disable
MAX(1)
TYP
Unit
fHCLK
25 °C 55 °C
85 °C
105 °C 125 °C 25 °C
55 °C
85 °C
105 °C 125 °C
2 MHz
81
110
217
395
754
115
182
375
750
1500
1 MHz
50
78
185
362
720
80
149
342
717
1456
400 kHz
28
57
163
340
698
60
122
314
689
1429
100 kHz
18
47
155
332
686
50
114
313
688
1438
µA
Electrical characteristics
96/193
Table 33. Current consumption in Low-power sleep modes, Flash in power-down
1. Guaranteed by characterization results, unless otherwise specified.
Table 34. Current consumption in Stop 2 mode
DocID027692 Rev 2
Symbol
Parameter
IDD (Stop 2)
Supply current in
Stop 2 mode,
RTC disabled
Conditions
-
-
RTC clocked by LSI
IDD (Stop 2
with RTC)
Supply current in
RTC clocked by LSE
Stop 2 mode,
bypassed at 32768 Hz
RTC enabled
VDD
25 °C 55 °C
85 °C
105 °C 125 °C 25 °C
55 °C
85 °C
105 °C 125 °C
1.8 V
1.14
3.77
14.7
34.7
77
2.7
9
37
87
193
2.4 V
1.15
3.86
15
35.5
79.1
2.7
10
38
89
198
3V
1.18
3.97
15.4
36.4
81.3
2.8
10
39
91
203
3.6 V
1.26
4.11
16
38
85.1
3.0
10
40
95(2)
213
1.8 V
1.42
4.04
15
34.9
77.2
3.1
10
38
87
193
2.4 V
1.5
4.22
15.4
35.7
79.2
3.2
11
39
89
198
3V
1.64
4.37
15.8
36.7
81.4
3.4
11
40
92
204
3.6 V
1.79
4.65
16.6
38.4
85.4
3.6
12
42
96
214
1.8 V
1.5
4.13
15.2
35.3
77.6
3.2
10
38
88
194
2.4 V
1.63
4.33
15.6
36
79.6
3.4
11
39
90
199
3V
1.79
4.55
16.1
37
81.8
3.6
11
40
93
205
3.6 V
2.04
4.9
16.8
38.7
85.6
3.9
12
42
97
214
1.8 V
1.43
3.99
14.7
35
-
3.2
10
37
88
-
2.4 V
1.54
4.11
15
35.8
-
3.3
10
38
90
-
3V
1.67
4.29
15.5
36.7
-
3.4
11
39
92
-
3.6 V
1.87
4.57
16.2
38.3
-
3.7
11
41
96
-
Unit
µA
µA
STM32L475xx
RTC clocked by LSE
quartz(3)
in low drive mode
MAX(1)
TYP
Symbol
IDD (wakeup
from Stop2)
Parameter
Supply current
during wakeup
from Stop 2
mode
Conditions
-
MAX(1)
TYP
VDD
25 °C 55 °C
85 °C
105 °C 125 °C 25 °C
DocID027692 Rev 2
Wakeup clock is
MSI = 48 MHz,
voltage Range 1.
See (4).
3V
1.9
-
-
-
-
Wakeup clock is
MSI = 4 MHz,
voltage Range 2.
See (4).
3V
2.24
-
-
-
-
Wakeup clock is
HSI16 = 16 MHz,
voltage Range 1.
See (4).
3V
2.1
-
-
-
-
55 °C
85 °C
-
105 °C 125 °C
Unit
STM32L475xx
Table 34. Current consumption in Stop 2 mode (continued)
mA
1. Guaranteed based on test during characterization, unless otherwise specified.
2. Guaranteed by test in production.
3. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
4. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 41: Low-power mode wakeup timings.
Electrical characteristics
97/193
Symbol
Parameter
Supply
current in
IDD (Stop 1)
Stop 1 mode,
RTC disabled
Conditions
-
-
RTC clocked by LSI
DocID027692 Rev 2
Supply
IDD (Stop 1 current in stop RTC clocked by LSE
with RTC) 1 mode,
bypassed, at 32768 Hz
RTC enabled
RTC clocked by LSE quartz(2)
in low drive mode
Wakeup clock MSI = 48 MHz,
voltage Range 1,
See (3).
VDD
25 °C 55 °C 85 °C 105 °C 125 °C 25 °C
55 °C
85 °C
1.8 V
6.59
24.7
92.7
208
437
2.4 V
6.65
24.8
92.9
209
439
3V
6.65
24.9
93.3
210
3.6 V
6.70
25.1
93.8
1.8 V
6.88
25.0
105 °C 125 °C
16
62
232
520
1093
17
62
232
523
1098
442
17
62
233
525
1105
212
447
17
63
235
530
1118
93.1
209
439
17
63
233
523
1098
2.4 V
7.02
25.2
93.7
210
441
18
63
234
525
1103
3V
7.12
25.4
94.2
212
444
18
64
236
530
1110
3.6 V
7.25
25.7
95.2
214
449
18
64
238
535
1123
1.8 V
6.91
25.2
93.4
210
440
17
63
234
525
1100
2.4 V
7.04
25.3
94.2
211
443
18
63
236
528
1108
3V
7.19
25.7
95.0
212
446
18
64
238
530
1115
3.6 V
7.97
26.0
96.1
215
451
20
65
240
538
1128
1.8 V
6.85
25.0
93.0
208.3
-
17
63
233
521
-
2.4 V
6.94
25.1
93.2
209.3
-
17
63
233
523
-
3V
7.10
25.2
93.6
210.3
-
18
63
234
526
-
3.6 V
7.34
25.4
94.1
212.3
-
18
64
235
531
-
3V
1.47
-
-
-
-
3V
1.7
-
-
-
-
3V
1.62
-
-
-
-
-
1. Guaranteed based on test during characterization, unless otherwise specified.
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
3. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 41: Low-power mode wakeup timings.
Unit
µA
µA
mA
STM32L475xx
Wakeup clock MSI = 4 MHz,
Supply
IDD (wakeup current during voltage Range 2,
from Stop1) wakeup from See (3).
Stop 1
Wakeup clock
HSI16 = 16 MHz,
voltage Range 1,
See (3).
MAX(1)
TYP
Electrical characteristics
98/193
Table 35. Current consumption in Stop 1 mode
Symbol
Parameter
Supply
current in
IDD (Stop 0)
Stop 0 mode,
RTC disabled
Conditions
VDD
MAX(1)
TYP
25 °C 55 °C
85 °C
105 °C 125 °C 25 °C
55 °C
85 °C
105 °C 125 °C
1.8 V
108
132
217
356
631
153
213
426
773
1461
2.4 V
110
134
219
358
634
158
218
431
778
1468
3V
111
135
220
360
637
161
221
433
783
1476
3.6 V
113
137
222
363
642
166
226
438
791(2)
1488
Unit
STM32L475xx
Table 36. Current consumption in Stop 0 mode
µA
1. Guaranteed by characterization results, unless otherwise specified.
2. Guaranteed by test in production.
DocID027692 Rev 2
Electrical characteristics
99/193
Symbol
Parameter
Supply current
in Standby
mode (backup
IDD(Standby)
registers
retained),
RTC disabled
Conditions
-
no independent watchdog
with independent
watchdog
DocID027692 Rev 2
RTC clocked by LSI, no
independent watchdog
Supply current
in Standby
IDD(Standby mode (backup
with RTC) registers
retained),
RTC enabled
RTC clocked by LSI, with
independent watchdog
RTC clocked by LSE
bypassed at 32768Hz
MAX(1)
TYP
VDD
25 °C 55 °C
85 °C
105 °C 125 °C 25 °C
55 °C
85 °C
105 °C 125 °C
1.8 V
114
355
1540
4146
10735
176
888
3850
10365
26838
2.4 V
138
407
1795
4828
12451
223
1018
4488
12070
31128
3V
150
486
2074
5589
14291
263
1215
5185
13973
35728
3.6 V
198
618
2608
6928
17499
383
1545
6520
1.8 V
317
-
-
-
-
-
-
2.4 V
391
-
-
-
-
-
-
17320
(2)
43748
-
-
-
-
-
-
3V
438
-
-
-
-
-
-
-
-
-
3.6 V
566
-
-
-
-
-
-
-
-
-
1.8 V
377
621
1873
4564
11318
491
1207
4250
10867
27537
2.4 V
464
756
2210
5348
13166
614
1436
4986
12694
31986
3V
572
913
2599
6219
15197
770
1727
5815
14729
36815
3.6 V
722
1144
3253
7724
18696
1012
2176
7294
18275
45184
1.8 V
456
-
-
-
-
-
-
-
-
-
2.4 V
557
-
-
-
-
-
-
-
-
-
3V
663
-
-
-
-
-
-
-
-
-
3.6 V
885
-
-
-
-
-
-
-
-
-
1.8 V
289
527
1747
4402
11009
-
-
-
-
-
2.4 V
396
671
2108
5202
12869
-
-
-
-
-
528
853
2531
6095
14915
-
-
-
-
-
710
1111
3115
7470
18221
-
-
-
-
-
1.8 V
416
640
1862
4479
11908
-
-
-
-
-
2.4 V
RTC clocked by LSE
quartz (3) in low drive mode 3 V
514
796
2193
5236
13689
-
-
-
-
-
652
961
2589
6103
15598
-
-
-
-
-
3.6 V
821
1226
3235
7551
17947
-
-
-
-
-
nA
nA
nA
STM32L475xx
3V
3.6 V
Unit
Electrical characteristics
100/193
Table 37. Current consumption in Standby mode
Symbol
Conditions
Parameter
Supply current
IDD(SRAM2) to be added in
Standby mode
(4)
when SRAM2
is retained
Supply current
IDD(wakeup
during wakeup
from
from Standby
Standby)
mode
-
VDD
-
Wakeup clock is
MSI = 4 MHz.
See (5).
MAX(1)
TYP
25 °C 55 °C
85 °C
105 °C 125 °C 25 °C
55 °C
85 °C
105 °C 125 °C
1.8 V
235
641
2293
5192
11213
588
1603
5733
12980
28033
2.4 V
237
645
2303
5213
11246
593
1613
5758
13033
28115
3V
236
647
2306
5221
11333
593
1618
5765
13053
28333
3.6 V
235
646
2308
5200
11327
595
1620
5770
13075
28350
3V
1.7
-
-
-
-
-
Unit
STM32L475xx
Table 37. Current consumption in Standby mode (continued)
nA
mA
1. Guaranteed by characterization results, unless otherwise specified.
2. Guaranteed by test in production.
DocID027692 Rev 2
3. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
4. The supply current in Standby with SRAM2 mode is: IDD(Standby) + IDD(SRAM2). The supply current in Standby with RTC with SRAM2 mode is: IDD(Standby + RTC) +
IDD(SRAM2).
5. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 41: Low-power mode wakeup timings.
Table 38. Current consumption in Shutdown mode
Symbol
Parameter
-
-
MAX(1)
TYP
VDD
25 °C 55 °C
85 °C
105 °C 125 °C 25 °C
55 °C
85 °C
1.8 V
29.8
194
1110
3250
9093
2.4 V
44.3
237
1310
3798
3V
64.1
293
1554
3.6 V
112
420
2041
105 °C 125 °C
75
485
2775
8125
22733
10473
111
593
3275
9495
26183
4461
12082
160
733
3885
11153
30205
5689
15186
280
1050
5103
14223
37965
Unit
nA
101/193
Electrical characteristics
Supply current
in Shutdown
mode
IDD(Shutdown) (backup
registers
retained) RTC
disabled
Conditions
Symbol
Parameter
Supply current
in Shutdown
mode
IDD(Shutdown
(backup
with RTC)
registers
retained) RTC
enabled
DocID027692 Rev 2
IDD(wakeup
from
Shutdown)
Supply current
during wakeup
from Shutdown
mode
Conditions
-
RTC clocked by LSE
bypassed at 32768 Hz
RTC clocked by LSE
quartz (2) in low drive
mode
Wakeup clock is
MSI = 4 MHz.
See (3).
MAX(1)
TYP
VDD
25 °C 55 °C
85 °C
105 °C 125 °C 25 °C
55 °C
85 °C
105 °C 125 °C
1.8 V
210
378
1299
3437
9357
-
-
-
-
-
2.4 V
303
499
1577
4056
10825
-
-
-
-
-
3V
422
655
1925
4820
12569
-
-
-
-
-
3.6 V
584
888
2511
6158
15706
-
-
-
-
-
1.8 V
329
499
1408
3460
-
-
-
-
-
-
2.4 V
431
634
1688
4064
-
-
-
-
-
-
3V
554
791
2025
4795
-
-
-
-
-
-
3.6 V
729
1040
2619
6129
-
-
-
-
-
-
3V
0.6
-
-
-
-
-
-
-
-
-
Unit
nA
Electrical characteristics
102/193
Table 38. Current consumption in Shutdown mode (continued)
mA
1. Guaranteed by characterization results, unless otherwise specified.
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
3. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 41: Low-power mode wakeup timings.
STM32L475xx
Symbol
Parameter
Conditions
-
RTC disabled
IDD(VBAT)
RTC enabled and
Backup domain
clocked by LSE
supply current
bypassed at 32768 Hz
DocID027692 Rev 2
RTC enabled and
clocked by LSE
quartz(2)
MAX(1)
TYP
VBAT
25 °C 55 °C
85 °C
105 °C 125 °C 25 °C
55 °C
85 °C
105 °C 125 °C
73
490
1468
4158
1.8 V
4
29
196
587
1663
10.8
2.4 V
5.27
36
226
673
1884
13.2
90
565
1683
4710
3V
6
42
264
775
2147
15.5
106
660
1938
5368
3.6 V
10
58
323
919
2488
25.8
144
808
2298
6220
1.8 V
183
201
367
729
-
-
-
-
-
-
2.4 V
268
295
486
901
-
-
-
-
-
-
3V
376
412
602
1075
-
-
-
-
-
-
3.6 V
508
558
752
1299
-
-
-
-
-
-
1.8 V
302
344
521
915
1978
-
-
-
-
-
2.4 V
388
436
639
1091
2289
-
-
-
-
-
3V
494
549
784
1301
2656
-
-
-
-
-
3.6 V
630
692
971
1571
3115
-
-
-
-
-
Unit
STM32L475xx
Table 39. Current consumption in VBAT mode
nA
1. Guaranteed by characterization results, unless otherwise specified.
2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
Electrical characteristics
103/193
Electrical characteristics
STM32L475xx
I/O system current consumption
The current consumption of the I/O system has two components: static and dynamic.
I/O static current consumption
All the I/Os used as inputs with pull-up generate current consumption when the pin is
externally held low. The value of this current consumption can be simply computed by using
the pull-up/pull-down resistors values given in Table 59: I/O static characteristics.
For the output pins, any external pull-down or external load must also be considered to
estimate the current consumption.
Additional I/O current consumption is due to I/Os configured as inputs if an intermediate
voltage level is externally applied. This current consumption is caused by the input Schmitt
trigger circuits used to discriminate the input value. Unless this specific configuration is
required by the application, this supply current consumption can be avoided by configuring
these I/Os in analog mode. This is notably the case of ADC input pins which should be
configured as analog inputs.
Caution:
Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,
as a result of external electromagnetic noise. To avoid current consumption related to
floating pins, they must either be configured in analog mode, or forced internally to a definite
digital value. This can be done either by using pull-up/down resistors or by configuring the
pins in output mode.
I/O dynamic current consumption
In addition to the internal peripheral current consumption measured previously (see
Table 40: Peripheral current consumption), the I/Os used by an application also contribute
to the current consumption. When an I/O pin switches, it uses the current from the I/O
supply voltage to supply the I/O pin circuitry and to charge/discharge the capacitive load
(internal or external) connected to the pin:
I SW = V DDIOx × f SW × C
where
ISW is the current sunk by a switching I/O to charge/discharge the capacitive load
VDDIOx is the I/O supply voltage
fSW is the I/O switching frequency
C is the total capacitance seen by the I/O pin: C = CINT+ CEXT + CS
CS is the PCB board capacitance including the pad pin.
The test pin is configured in push-pull output mode and is toggled by software at a fixed
frequency.
104/193
DocID027692 Rev 2
STM32L475xx
Electrical characteristics
On-chip peripheral current consumption
The current consumption of the on-chip peripherals is given in Table 40. The MCU is placed
under the following conditions:
•
All I/O pins are in Analog mode
•
The given value is calculated by measuring the difference of the current consumptions:
–
when the peripheral is clocked on
–
when the peripheral is clocked off
•
Ambient operating temperature and supply voltage conditions summarized in Table 19:
Voltage characteristics
•
The power consumption of the digital part of the on-chip peripherals is given in
Table 40. The power consumption of the analog part of the peripherals (where
applicable) is indicated in each related section of the datasheet.
Table 40. Peripheral current consumption
Range 1
Range 2
Low-power run
and sleep
Bus Matrix(1)
4.5
3.7
4.1
ADC independent clock domain
0.4
0.1
0.2
ADC AHB clock domain
5.5
4.7
5.5
CRC
0.4
0.2
0.3
DMA1
1.4
1.3
1.4
DMA2
1.5
1.3
1.4
FLASH
6.2
5.2
5.8
FMC
8.9
7.5
8.4
GPIOA(2)
4.8
3.8
4.4
(2)
4.8
4.0
4.6
GPIOC(2)
4.5
3.8
4.3
(2)
GPIOD
4.6
3.9
4.4
GPIOE(2)
5.2
4.5
4.9
GPIOF(2)
5.9
4.9
5.7
(2)
4.3
3.8
4.2
(2)
GPIOH
0.7
0.6
0.8
OTG_FS independent clock
domain
23.2
NA
NA
OTG_FS AHB clock domain
16.4
NA
NA
QUADSPI
7.8
6.7
7.3
RNG independent clock domain
2.2
NA
NA
RNG AHB clock domain
0.6
NA
NA
SRAM1
0.9
0.8
0.9
Peripheral
GPIOB
AHB
GPIOG
DocID027692 Rev 2
Unit
µA/MHz
105/193
181
Electrical characteristics
STM32L475xx
Table 40. Peripheral current consumption (continued)
Range 1
Range 2
Low-power run
and sleep
SRAM2
1.6
1.4
1.6
TSC
1.8
1.4
1.6
118.5
77.3
87.6
AHB to APB1 bridge
0.9
0.7
0.9
CAN1
4.6
4.0
4.4
DAC1
2.4
1.9
2.2
I2C1 independent clock domain
3.7
3.1
3.2
I2C1 APB clock domain
1.3
1.1
1.5
I2C2 independent clock domain
3.7
3.0
3.2
I2C2 APB clock domain
1.4
1.1
1.5
I2C3 independent clock domain
2.9
2.3
2.5
I2C3 APB clock domain
0.9
0.9
1.1
LPUART1 independent clock
domain
2.1
1.6
2.0
LPUART1 APB clock domain
0.6
0.6
0.6
LPTIM1 independent clock
domain
3.3
2.6
2.9
LPTIM1 APB clock domain
0.9
0.8
1.0
LPTIM2 independent clock
domain
3.1
2.7
2.9
LPTIM2 APB clock domain
0.8
0.6
0.7
OPAMP
0.4
0.4
0.3
PWR
0.5
0.5
0.4
SPI2
1.8
1.6
1.6
SPI3
2.1
1.7
1.8
SWPMI1 independent clock
domain
2.3
1.8
2.2
SWPMI1 APB clock domain
1.1
1.1
1.0
TIM2
6.8
5.7
6.3
TIM3
5.4
4.6
5.0
TIM4
5.2
4.4
4.9
TIM5
6.5
5.5
6.1
TIM6
1.1
1.0
1.0
TIM7
1.1
0.9
1.0
Peripheral
AHB
All AHB Peripherals
(3)
APB1
106/193
DocID027692 Rev 2
Unit
µA/MHz
µA/MHz
STM32L475xx
Electrical characteristics
Table 40. Peripheral current consumption (continued)
Range 1
Range 2
Low-power run
and sleep
USART2 independent clock
domain
4.1
3.6
3.8
USART2 APB clock domain
1.4
1.1
1.5
USART3 independent clock
domain
4.7
4.1
4.2
USART3 APB clock domain
1.5
1.3
1.7
UART4 independent clock
domain
3.9
3.2
3.5
UART4 APB clock domain
1.5
1.3
1.6
UART5 independent clock
domain
3.9
3.2
3.5
UART5 APB clock domain
1.3
1.2
1.4
WWDG
0.5
0.5
0.5
All APB1 on
84.2
70.7
80.2
AHB to APB2 bridge(4)
1.0
0.9
0.9
DFSDM
5.6
4.6
5.3
FW
0.7
0.5
0.7
SAI1 independent clock domain
2.6
2.1
2.3
SAI1 APB clock domain
2.1
1.8
2.0
SAI2 independent clock domain
3.3
2.7
3.0
SAI2 APB clock domain
2.4
2.1
2.2
SDMMC1 independent clock
domain
4.7
3.9
4.2
SDMMC1 APB clock domain
2.5
1.9
2.1
SPI1
2.0
1.6
1.9
SYSCFG/VREFBUF/COMP
0.6
0.4
0.5
TIM1
8.3
6.9
7.9
TIM8
8.6
7.1
8.1
TIM15
4.1
3.4
3.9
TIM16
3.0
2.5
2.9
TIM17
3.0
2.4
2.9
USART1 independent clock
domain
4.9
4.0
4.4
USART1 APB clock domain
1.5
1.3
1.7
All APB2 on
56.8
43.3
48.2
256.8
189.6
215.5
Peripheral
APB1
APB2
ALL
DocID027692 Rev 2
Unit
µA/MHz
107/193
181
Electrical characteristics
STM32L475xx
1. The BusMatrix is automatically active when at least one master is ON (CPU, DMA).
2. The GPIOx (x= A…H) dynamic current consumption is approximately divided by a factor two versus this table values when
the GPIO port is locked thanks to LCKK and LCKy bits in the GPIOx_LCKR register. In order to save the full GPIOx current
consumption, the GPIOx clock should be disabled in the RCC when all port I/Os are used in alternate function or analog
mode (clock is only required to read or write into GPIO registers, and is not used in AF or analog modes).
3. The AHB to APB1 Bridge is automatically active when at least one peripheral is ON on the APB1.
4. The AHB to APB2 Bridge is automatically active when at least one peripheral is ON on the APB2.
6.3.6
Wakeup time from low-power modes and voltage scaling
transition times
The wakeup times given in Table 41 are the latency between the event and the execution of
the first user instruction.
The device goes in low-power mode after the WFE (Wait For Event) instruction.
Table 41. Low-power mode wakeup timings(1)
Symbol
tWUSLEEP
Parameter
Typ
Max
-
6
6
Wakeup time from Sleep
mode to Run mode
Wakeup time from LowtWULPSLEEP power sleep mode to Lowpower run mode
Wakeup in Flash with Flash in power-down during
low-power sleep mode (SLEEP_PD=1 in
FLASH_ACR) and with clock MSI = 2 MHz
Range 1
Wake up time from Stop 0
mode to Run mode in Flash
Range 2
tWUSTOP0
Range 1
Wake up time from Stop 0
mode to Run mode in
SRAM1
108/193
Conditions
Range 2
6
9.3
Wakeup clock MSI = 48 MHz
5.6
10.9
Wakeup clock HSI16 = 16 MHz
4.7
10.4
Wakeup clock MSI = 24 MHz
5.7
11.1
Wakeup clock HSI16 = 16 MHz
4.5
10.5
Wakeup clock MSI = 4 MHz
6.6
14.2
Wakeup clock MSI = 48 MHz
0.7
2.05
Wakeup clock HSI16 = 16 MHz
1.7
2.8
Wakeup clock MSI = 24 MHz
0.8
2.72
Wakeup clock HSI16 = 16 MHz
1.7
2.8
Wakeup clock MSI = 4 MHz
2.4
11.32
DocID027692 Rev 2
Unit
Nb of
CPU
cycles
µs
STM32L475xx
Electrical characteristics
Table 41. Low-power mode wakeup timings(1) (continued)
Symbol
Parameter
Conditions
Range 1
Wake up time from Stop 1
mode to Run mode in Flash
Range 2
Range 1
tWUSTOP1
Wake up time from Stop 1
mode to Run mode in
SRAM1
Wake up time from Stop 1
mode to Low-power run
mode in Flash
Wake up time from Stop 1
mode to Low-power run
mode in SRAM1
Range 2
Wake up time from Stop 2
mode to Run mode in Flash
Range 2
tWUSTOP2
Range 1
tWUSTBY
tWUSTBY
SRAM2
tWUSHDN
Max
Wakeup clock MSI = 48 MHz
6.2
10.2
Wakeup clock HSI16 = 16 MHz
6.3
8.99
Wakeup clock MSI = 24 MHz
6.3 10.46
Wakeup clock HSI16 = 16 MHz
6.3
Wakeup clock MSI = 4 MHz
8.0 13.23
Wakeup clock MSI = 48 MHz
4.5
5.78
Wakeup clock HSI16 = 16 MHz
5.5
7.1
Wakeup clock MSI = 24 MHz
5.0
6.5
Wakeup clock HSI16 = 16 MHz
5.5
7.1
Wakeup clock MSI = 4 MHz
8.2
13.5
12.7
20
Regulator in
low-power
Wakeup clock MSI = 2 MHz
mode (LPR=1 in
PWR_CR1)
Range 1
Wake up time from Stop 2
mode to Run mode in
SRAM1
Typ
Range 2
Wakeup time from Standby
mode to Run mode
Range 1
Wakeup time from Standby
with SRAM2 to Run mode
Range 1
Wakeup time from
Shutdown mode to Run
mode
Range 1
Unit
8.87
µs
10.7 21.5
Wakeup clock MSI = 48 MHz
8.0
9.4
Wakeup clock HSI16 = 16 MHz
7.3
9.3
Wakeup clock MSI = 24 MHz
8.2
9.9
Wakeup clock HSI16 = 16 MHz
7.3
9.3
Wakeup clock MSI = 4 MHz
10.6 15.8
Wakeup clock MSI = 48 MHz
5.1
6.7
Wakeup clock HSI16 = 16 MHz
5.7
8
Wakeup clock MSI = 24 MHz
5.5
6.65
Wakeup clock HSI16 = 16 MHz
5.7
7.53
Wakeup clock MSI = 4 MHz
8.2
16.6
Wakeup clock MSI = 8 MHz
14.3 20.8
Wakeup clock MSI = 4 MHz
20.1 35.5
Wakeup clock MSI = 8 MHz
14.3 24.3
Wakeup clock MSI = 4 MHz
20.1 38.5
Wakeup clock MSI = 4 MHz
256 330.6
µs
µs
µs
µs
1. Guaranteed by characterization results.
DocID027692 Rev 2
109/193
181
Electrical characteristics
STM32L475xx
Table 42. Regulator modes transition times(1)
Symbol
Parameter
tWULPRUN
tVOST
Conditions
Typ
Max
Wakeup time from Low-power run mode to
Code run with MSI 2 MHz
Run mode(2)
5
7
Regulator transition time from Range 2 to
Range 1 or Range 1 to Range 2(3)
20
40
Typ
Max
Stop mode 0
-
1.7
Stop mode 1/2
-
8.5
Unit
µs
Code run with MSI 24 MHz
1. Guaranteed by characterization results.
2. Time until REGLPF flag is cleared in PWR_SR2.
3. Time until VOSF flag is cleared in PWR_SR2.
Table 43. Wakeup time using USART/LPUART(1)
Symbol
Parameter
tWUUSART
tWULPUART
Conditions
Wakeup time needed to calculate the
maximum USART/LPUART baudrate
allowing to wakeup up from stop mode
Unit
µs
1. Guaranteed by design.
6.3.7
External clock source characteristics
High-speed external user clock generated from an external source
In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO.
The external clock signal has to respect the I/O characteristics in Section 6.3.14. However,
the recommended clock input waveform is shown in Figure 13: High-speed external clock
source AC timing diagram.
Table 44. High-speed external user clock characteristics(1)
Symbol
fHSE_ext
Parameter
Conditions
User external clock source frequency
Min
Typ
Max
Voltage scaling
Range 1
-
8
48
Voltage scaling
Range 2
-
8
26
MHz
VHSEH
OSC_IN input pin high level voltage
-
0.7 VDDIOx
-
VDDIOx
VHSEL
OSC_IN input pin low level voltage
-
VSS
-
0.3 VDDIOx
Voltage scaling
Range 1
7
-
-
Voltage scaling
Range 2
18
-
-
tw(HSEH)
OSC_IN high or low time
tw(HSEL)
1. Guaranteed by design.
110/193
DocID027692 Rev 2
Unit
V
ns
STM32L475xx
Electrical characteristics
Figure 13. High-speed external clock source AC timing diagram
WZ+6(+
9+6(+
9+6(/
WU+6(
WI+6(
W
WZ+6(/
7+6(
069
Low-speed external user clock generated from an external source
In bypass mode the LSE oscillator is switched off and the input pin is a standard GPIO.
The external clock signal has to respect the I/O characteristics in Section 6.3.14. However,
the recommended clock input waveform is shown in Figure 14.
Table 45. Low-speed external user clock characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
kHz
fLSE_ext
User external clock source frequency
-
-
32.768
1000
VLSEH
OSC32_IN input pin high level voltage
-
0.7 VDDIOx
-
VDDIOx
VLSEL
OSC32_IN input pin low level voltage
-
VSS
-
0.3 VDDIOx
-
250
-
-
tw(LSEH)
OSC32_IN high or low time
tw(LSEL)
V
ns
1. Guaranteed by design.
Figure 14. Low-speed external clock source AC timing diagram
WZ/6(+
9/6(+
9/6(/
WU/6(
WI/6(
WZ/6(/
W
7/6(
069
DocID027692 Rev 2
111/193
181
Electrical characteristics
STM32L475xx
High-speed external clock generated from a crystal/ceramic resonator
The high-speed external (HSE) clock can be supplied with a 4 to 48 MHz crystal/ceramic
resonator oscillator. All the information given in this paragraph are based on design
simulation results obtained with typical external components specified in Table 46. In the
application, the resonator and the load capacitors have to be placed as close as possible to
the oscillator pins in order to minimize output distortion and startup stabilization time. Refer
to the crystal resonator manufacturer for more details on the resonator characteristics
(frequency, package, accuracy).
Table 46. HSE oscillator characteristics(1)
Symbol
fOSC_IN
RF
Conditions(2)
Min
Typ
Max
Unit
Oscillator frequency
-
4
8
48
MHz
Feedback resistor
-
-
200
-
kΩ
-
-
5.5
VDD = 3 V,
Rm = 30 Ω,
CL = 10 [email protected] MHz
-
0.44
-
VDD = 3 V,
Rm = 45 Ω,
CL = 10 [email protected] MHz
-
0.45
-
VDD = 3 V,
Rm = 30 Ω,
CL = 5 [email protected] MHz
-
0.68
-
VDD = 3 V,
Rm = 30 Ω,
CL = 10 [email protected] MHz
-
0.94
-
VDD = 3 V,
Rm = 30 Ω,
CL = 20 [email protected] MHz
-
1.77
-
Startup
-
-
1.5
mA/V
VDD is stabilized
-
2
-
ms
Parameter
(3)
During startup
IDD(HSE)
Gm
HSE current consumption
Maximum critical crystal
transconductance
tSU(HSE)(4) Startup time
mA
1. Guaranteed by design.
2. Resonator characteristics given by the crystal/ceramic resonator manufacturer.
3. This consumption level occurs during the first 2/3 of the tSU(HSE) startup time
4. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz
oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly
with the crystal manufacturer
For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the
5 pF to 20 pF range (typ.), designed for high-frequency applications, and selected to match
the requirements of the crystal or resonator (see Figure 15). CL1 and CL2 are usually the
same size. The crystal manufacturer typically specifies a load capacitance which is the
series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF
can be used as a rough estimate of the combined pin and board capacitance) when sizing
CL1 and CL2.
112/193
DocID027692 Rev 2
STM32L475xx
Note:
Electrical characteristics
For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 15. Typical application with an 8 MHz crystal
5HVRQDWRUZLWKLQWHJUDWHG
FDSDFLWRUV
&/
26&B,1
0+]
UHVRQDWRU
&/
5(;7 I+6(
5)
%LDV
FRQWUROOHG
JDLQ
26&B287
069
1. REXT value depends on the crystal characteristics.
Low-speed external clock generated from a crystal resonator
The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal resonator
oscillator. All the information given in this paragraph are based on design simulation results
obtained with typical external components specified in Table 47. In the application, the
resonator and the load capacitors have to be placed as close as possible to the oscillator
pins in order to minimize output distortion and startup stabilization time. Refer to the crystal
resonator manufacturer for more details on the resonator characteristics (frequency,
package, accuracy).
Table 47. LSE oscillator characteristics (fLSE = 32.768 kHz)(1)
Symbol
IDD(LSE)
Parameter
LSE current consumption
Maximum critical crystal
Gmcritmax
gm
tSU(LSE)(3) Startup time
Conditions(2)
Min
Typ
Max
LSEDRV[1:0] = 00
Low drive capability
-
250
-
LSEDRV[1:0] = 01
Medium low drive capability
-
315
-
LSEDRV[1:0] = 10
Medium high drive capability
-
500
-
LSEDRV[1:0] = 11
High drive capability
-
630
-
LSEDRV[1:0] = 00
Low drive capability
-
-
0.5
LSEDRV[1:0] = 01
Medium low drive capability
-
-
0.75
LSEDRV[1:0] = 10
Medium high drive capability
-
-
1.7
LSEDRV[1:0] = 11
High drive capability
-
-
2.7
VDD is stabilized
-
2
-
DocID027692 Rev 2
Unit
nA
µA/V
s
113/193
181
Electrical characteristics
STM32L475xx
1. Guaranteed by design.
2. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for
ST microcontrollers”.
3.
tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is
reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer
Note:
For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 16. Typical application with a 32.768 kHz crystal
5HVRQDWRUZLWKLQWHJUDWHG
FDSDFLWRUV
&/
26&B,1
I/6(
'ULYH
SURJUDPPDEOH
DPSOLILHU
N+]
UHVRQDWRU
26&B287
&/
069
Note:
114/193
An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden
to add one.
DocID027692 Rev 2
STM32L475xx
6.3.8
Electrical characteristics
Internal clock source characteristics
The parameters given in Table 48 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 22: General operating
conditions. The provided curves are characterization results, not tested in production.
High-speed internal (HSI16) RC oscillator
Table 48. HSI16 oscillator characteristics(1)
Symbol
fHSI16
TRIM
Parameter
HSI16 Frequency
HSI16 user trimming step
DuCy(HSI16)(2) Duty Cycle
Conditions
Min
Typ
Max
Unit
15.88
-
16.08
MHz
Trimming code is not a
multiple of 64
0.2
0.3
0.4
Trimming code is a
multiple of 64
-4
-6
-8
45
-
55
%
-1
-
1
%
-2
-
1.5
%
-0.1
-
0.05
%
VDD=3.0 V, TA=30 °C
-
%
∆Temp(HSI16)
HSI16 oscillator frequency TA= 0 to 85 °C
drift over temperature
TA= -40 to 125 °C
∆VDD(HSI16)
HSI16 oscillator frequency
VDD=1.62 V to 3.6 V
drift over VDD
tsu(HSI16)(2)
HSI16 oscillator start-up
time
-
-
0.8
1.2
μs
tstab(HSI16)(2)
HSI16 oscillator
stabilization time
-
-
3
5
μs
IDD(HSI16)(2)
HSI16 oscillator power
consumption
-
-
155
190
μA
1. Guaranteed by characterization results.
2. Guaranteed by design.
DocID027692 Rev 2
115/193
181
Electrical characteristics
STM32L475xx
Figure 17. HSI16 frequency versus temperature
0+]
0HDQ
PLQ
ƒ&
PD[
06Y9
116/193
DocID027692 Rev 2
STM32L475xx
Electrical characteristics
Multi-speed internal (MSI) RC oscillator
Table 49. MSI oscillator characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Range 0
99
100
101
Range 1
198
200
202
Range 2
396
400
404
Range 3
792
800
808
Range 4
0.99
1
1.01
Range 5
1.98
2
2.02
Range 6
3.96
4
4.04
Range 7
7.92
8
8.08
Range 8
15.8
16
16.16
Range 9
23.8
24
24.4
Range 10
31.7
32
32.32
Range 11
47.5
48
48.48
Range 0
-
98.304
-
Range 1
-
196.608
-
Range 2
-
393.216
-
Range 3
-
786.432
-
Range 4
-
1.016
-
PLL mode Range 5
XTAL=
32.768 kHz Range 6
-
1.999
-
-
3.998
-
Range 7
-
7.995
-
Range 8
-
15.991
-
Range 9
-
23.986
-
Range 10
-
32.014
-
Range 11
-
48.005
-
-3.5
-
3
-8
-
6
MSI mode
fMSI
∆TEMP(MSI)(2)
MSI frequency
after factory
calibration, done
at VDD=3 V and
TA=30 °C
MSI oscillator
frequency drift
over temperature
MSI mode
TA= -0 to 85 °C
TA= -40 to 125 °C
DocID027692 Rev 2
Unit
kHz
MHz
kHz
MHz
%
117/193
181
Electrical characteristics
STM32L475xx
Table 49. MSI oscillator characteristics(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
VDD=1.62 V
to 3.6 V
-1.2
-
VDD=2.4 V
to 3.6 V
-0.5
-
VDD=1.62 V
to 3.6 V
-2.5
-
VDD=2.4 V
to 3.6 V
-0.8
-
VDD=1.62 V
to 3.6 V
-5
-
VDD=2.4 V
to 3.6 V
-1.6
-
TA= -40 to 85 °C
-
1
2
TA= -40 to 125 °C
-
2
4
Range 0 to 3
∆VDD(MSI)
(2)
MSI oscillator
frequency drift
MSI mode
over VDD
(reference is 3 V)
Range 4 to 7
Range 8 to 11
∆FSAMPLING
(MSI)(2)(6)
Frequency
variation in
MSI mode
sampling mode(3)
P_USB
Jitter(MSI)(6)
Period jitter for
USB clock(4)
MT_USB
Jitter(MSI)(6)
Medium term jitter PLL mode
for USB clock(5)
Range 11
CC jitter(MSI)(6)
P jitter(MSI)(6)
tSU(MSI)(6)
tSTAB(MSI)(6)
118/193
PLL mode
Range 11
Max
Unit
0.5
0.7
%
1
for next
transition
-
-
-
3.458
for paired
transition
-
-
-
3.916
for next
transition
-
-
-
2
for paired
transition
-
-
-
1
%
ns
ns
RMS cycle-tocycle jitter
PLL mode Range 11
-
-
60
-
ps
RMS Period jitter
PLL mode Range 11
-
-
50
-
ps
Range 0
-
-
10
20
Range 1
-
-
5
10
Range 2
-
-
4
8
Range 3
-
-
3
7
Range 4 to 7
-
-
3
6
Range 8 to 11
-
-
2.5
6
10 % of final
frequency
-
-
0.25
0.5
5 % of final
frequency
-
-
0.5
1.25
1 % of final
frequency
-
-
-
2.5
MSI oscillator
start-up time
MSI oscillator
stabilization time
PLL mode
Range 11
DocID027692 Rev 2
us
ms
STM32L475xx
Electrical characteristics
Table 49. MSI oscillator characteristics(1) (continued)
Symbol
IDD(MSI)(6)
Parameter
MSI oscillator
power
consumption
Conditions
MSI and
PLL mode
Min
Typ
Max
Range 0
-
-
0.6
1
Range 1
-
-
0.8
1.2
Range 2
-
-
1.2
1.7
Range 3
-
-
1.9
2.5
Range 4
-
-
4.7
6
Range 5
-
-
6.5
9
Range 6
-
-
11
15
Range 7
-
-
18.5
25
Range 8
-
-
62
80
Range 9
-
-
85
110
Range 10
-
-
110
130
Range 11
-
-
155
190
Unit
µA
1. Guaranteed by characterization results.
2. This is a deviation for an individual part once the initial frequency has been measured.
3. Sampling mode means Low-power run/Low-power sleep modes with Temperature sensor disable.
4. Average period of MSI @48 MHz is compared to a real 48 MHz clock over 28 cycles. It includes frequency tolerance + jitter
of MSI @48 MHz clock.
5. Only accumulated jitter of MSI @48 MHz is extracted over 28 cycles.
For next transition: min. and max. jitter of 2 consecutive frame of 28 cycles of the MSI @48 MHz, for 1000 captures over 28
cycles.
For paired transitions: min. and max. jitter of 2 consecutive frame of 56 cycles of the MSI @48 MHz, for 1000 captures over
56 cycles.
6. Guaranteed by design.
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STM32L475xx
Figure 18. Typical current consumption versus MSI frequency
Low-speed internal (LSI) RC oscillator
Table 50. LSI oscillator characteristics(1)
Symbol
fLSI
tSU(LSI)(2)
tSTAB(LSI)(2)
IDD(LSI)(2)
Parameter
LSI Frequency
Conditions
Min
Typ
Max
VDD = 3.0 V, TA = 30 °C
31.04
-
32.96
VDD = 1.62 to 3.6 V, TA = -40 to 125 °C
29.5
-
34
-
-
80
130
μs
5% of final frequency
-
125
180
μs
-
-
110
180
nA
LSI oscillator startup time
LSI oscillator
stabilization time
LSI oscillator power
consumption
Unit
kHz
1. Guaranteed by characterization results.
2. Guaranteed by design.
6.3.9
PLL characteristics
The parameters given in Table 51 are derived from tests performed under temperature and
VDD supply voltage conditions summarized in Table 22: General operating conditions.
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STM32L475xx
Electrical characteristics
Table 51. PLL, PLLSAI1, PLLSAI2 characteristics(1)
Symbol
fPLL_IN
Parameter
Conditions
Min
Typ
Max
Unit
(2)
-
4
-
16
MHz
-
45
-
55
%
Voltage scaling Range 1
2.0645
-
80
Voltage scaling Range 2
2.0645
-
26
Voltage scaling Range 1
8
-
80
Voltage scaling Range 2
8
-
26
Voltage scaling Range 1
8
-
80
Voltage scaling Range 2
8
-
26
Voltage scaling Range 1
64
-
344
Voltage scaling Range 2
64
-
128
-
15
40
-
40
-
-
30
-
VCO freq = 64 MHz
-
150
200
VCO freq = 96 MHz
-
200
260
VCO freq = 192 MHz
-
300
380
VCO freq = 344 MHz
-
520
650
PLL input clock
PLL input clock duty cycle
fPLL_P_OUT PLL multiplier output clock P
fPLL_Q_OUT PLL multiplier output clock Q
fPLL_R_OUT PLL multiplier output clock R
fVCO_OUT
tLOCK
Jitter
IDD(PLL)
PLL VCO output
PLL lock time
RMS cycle-to-cycle jitter
RMS period jitter
PLL power consumption on
VDD(1)
System clock 80 MHz
MHz
MHz
MHz
MHz
μs
±ps
μA
1. Guaranteed by design.
2. Take care of using the appropriate division factor M to obtain the specified PLL input clock values. The M factor is shared
between the 3 PLLs.
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Electrical characteristics
6.3.10
STM32L475xx
Flash memory characteristics
Table 52. Flash memory characteristics(1)
Symbol
Parameter
Conditions
Typ
Max
Unit
tprog
64-bit programming time
-
81.69
90.76
µs
tprog_row
one row (32 double
word) programming time
normal programming
2.61
2.90
fast programming
1.91
2.12
tprog_page
one page (2 Kbyte)
programming time
normal programming
20.91
23.24
fast programming
15.29
16.98
22.02
24.47
normal programming
5.35
5.95
fast programming
3.91
4.35
22.13
24.59
Write mode
3.4
-
Erase mode
3.4
-
Write mode
7 (for 2 μs)
-
Erase mode
7 (for 41 μs)
-
tERASE
tprog_bank
tME
IDD
Page (2 KB) erase time
one bank (512 Kbyte)
programming time
-
Mass erase time
(one or two banks)
-
Average consumption
from VDD
Maximum current (peak)
ms
s
ms
mA
1. Guaranteed by design.
Table 53. Flash memory endurance and data retention
Symbol
NEND
tRET
Min(1)
Unit
TA = –40 to +105 °C
10
kcycles
1 kcycle(2) at TA = 85 °C
30
Parameter
Endurance
Data retention
Conditions
1 kcycle
(2)
1 kcycle
(2)
at TA = 105 °C
15
at TA = 125 °C
7
(2)
at TA = 55 °C
30
10 kcycles(2) at TA = 85 °C
15
10 kcycles
10 kcycles
(2)
at TA = 105 °C
1. Guaranteed by characterization results.
2. Cycling performed over the whole temperature range.
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DocID027692 Rev 2
10
Years
STM32L475xx
6.3.11
Electrical characteristics
EMC characteristics
Susceptibility tests are performed on a sample basis during device characterization.
Functional EMS (electromagnetic susceptibility)
While a simple application is executed on the device (toggling 2 LEDs through I/O ports).
the device is stressed by two electromagnetic events until a failure occurs. The failure is
indicated by the LEDs:
•
Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until
a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.
•
FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and
VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is
compliant with the IEC 61000-4-4 standard.
A device reset allows normal operations to be resumed.
The test results are given in Table 54. They are based on the EMS levels and classes
defined in application note AN1709.
Table 54. EMS characteristics
Conditions
Level/
Class
Symbol
Parameter
VFESD
Voltage limits to be applied on any I/O pin
to induce a functional disturbance
VDD = 3.3 V, TA = +25 °C,
fHCLK = 80 MHz,
conforming to IEC 61000-4-2
2B
VEFTB
Fast transient voltage burst limits to be
applied through 100 pF on VDD and VSS
pins to induce a functional disturbance
VDD = 3.3 V, TA = +25 °C,
fHCLK = 80 MHz,
conforming to IEC 61000-4-4
4A
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations
The software flowchart must include the management of runaway conditions such as:
•
Corrupted program counter
•
Unexpected reset
•
Critical Data corruption (control registers...)
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Electrical characteristics
STM32L475xx
Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Electromagnetic Interference (EMI)
The electromagnetic field emitted by the device are monitored while a simple application is
executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with
IEC 61967-2 standard which specifies the test board and the pin loading.
Table 55. EMI characteristics
Symbol
Parameter
Conditions
Max vs.
[fHSE/fHCLK]
Monitored
frequency band
Unit
Max vs.
[fHSE = 8 MHz /
fHCLK = 80 MHz]
SEMI
6.3.12
Peak level
VDD = 3.6 V, TA = 25 °C,
LQFP100 package
compliant with
IEC 61967-2
0.1 MHz to 30 MHz
-2
30 MHz to 130 MHz
-9
130 MHz to 1 GHz
6
EMI Level
dBµV
3.5
-
Electrical sensitivity characteristics
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the ANSI/JEDEC standard.
Table 56. ESD absolute maximum ratings
Symbol
VESD(HBM)
Ratings
Conditions
TA = +25 °C, conforming
Electrostatic discharge
to ANSI/ESDA/JEDEC
voltage (human body model)
JS-001
Electrostatic discharge
VESD(CDM) voltage (charge device
model)
TA = +25 °C,
conforming to ANSI/ESD
STM5.3.1
1. Guaranteed by characterization results.
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Class
Maximum
value(1)
2
2000
Unit
V
C3
250
STM32L475xx
Electrical characteristics
Static latch-up
Two complementary static tests are required on six parts to assess the latch-up
performance:
•
A supply overvoltage is applied to each power supply pin.
•
A current injection is applied to each input, output and configurable I/O pin.
These tests are compliant with EIA/JESD 78A IC latch-up standard.
Table 57. Electrical sensitivities
Symbol
LU
6.3.13
Parameter
Static latch-up class
Conditions
Class
TA = +105 °C conforming to JESD78A
II level A
I/O current injection characteristics
As a general rule, current injection to the I/O pins, due to external voltage below VSS or
above VDDIOx (for standard, 3.3 V-capable I/O pins) should be avoided during normal
product operation. However, in order to give an indication of the robustness of the
microcontroller in cases when abnormal injection accidentally happens, susceptibility tests
are performed on a sample basis during device characterization.
Functional susceptibility to I/O current injection
While a simple application is executed on the device, the device is stressed by injecting
current into the I/O pins programmed in floating input mode. While current is injected into
the I/O pin, one at a time, the device is checked for functional failures.
The failure is indicated by an out of range parameter: ADC error above a certain limit (higher
than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out
of the -5 µA/+0 µA range) or other functional failure (for example reset occurrence or
oscillator frequency deviation).
The characterization results are given in Table 58.
Negative induced leakage current is caused by negative injection and positive induced
leakage current is caused by positive injection.
Table 58. I/O current injection susceptibility
Functional
susceptibility
Symbol
IINJ
Description
Unit
Negative
injection
Positive
injection
Injected current on BOOT0 pin
-0
NA(1)
Injected current on pins except PA4, PA5, BOOT0
-5
NA(1)
Injected current on PA4, PA5 pins
-5
0
mA
1. NA: not applicable
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Electrical characteristics
6.3.14
STM32L475xx
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in Table 59 are derived from tests
performed under the conditions summarized in Table 22: General operating conditions. All
I/Os are designed as CMOS- and TTL-compliant (except BOOT0).
Table 59. I/O static characteristics
Symbol
VIL
(1)
Parameter
Conditions
Min
Typ
Max
I/O input low level
voltage except
BOOT0
1.62 V<VDDIOx<3.6 V
-
-
0.3xVDDIOx (2)
I/O input low level
voltage except
BOOT0
1.62 V<VDDIOx<3.6 V
-
-
0.39xVDDIOx-0.06 (3)
I/O input low level
voltage except
BOOT0
1.08 V<VDDIOx<1.62 V
V
BOOT0 I/O input low
1.62 V<VDDIOx<3.6 V
level voltage
VIH
(1)
Vhys(3)
126/193
Unit
-
-
0.43xVDDIOx-0.1 (3)
-
-
0.17xVDDIOx (3)
I/O input high level
voltage except
BOOT0
1.62 V<VDDIOx<3.6 V
0.7xVDDIOx (2)
-
-
I/O input high level
voltage except
BOOT0
1.62 V<VDDIOx<3.6 V
0.49xVDDIOX+0.26 (3)
-
-
I/O input high level
voltage except
BOOT0
1.08 V<VDDIOx<1.62 V
0.61xVDDIOX+0.05 (3)
-
-
BOOT0 I/O input
high level voltage
1.62 V<VDDIOx<3.6 V
0.77xVDDIOX (3)
-
-
TT_xx, FT_xxx and
NRST I/O input
hysteresis
1.62 V<VDDIOx<3.6 V
-
200
-
BOOT0 I/O input
hysteresis
1.62 V<VDDIOx<3.6 V
V
mV
DocID027692 Rev 2
-
200
-
STM32L475xx
Electrical characteristics
Table 59. I/O static characteristics (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
-
-
±100
Max(VDDXXX) ≤ VIN ≤
Max(VDDXXX)+1 V(4)(5)
-
-
650(3)(6)
Max(VDDXXX)+1 V <
VIN ≤ 5.5 V(3)(5)
-
-
200(6)
VIN ≤ Max(VDDXXX) (4)
-
-
±150
Max(VDDXXX) ≤ VIN ≤
Max(VDDXXX)+1 V(4)
-
-
2500(3)(7)
Max(VDDXXX)+1 V <
VIN ≤ 5.5 V(4)(5)(7)
-
-
250(7)
VIN ≤ Max(VDDXXX)(6)
-
-
±150
Max(VDDXXX) ≤ VIN <
3.6 V(6)
-
-
2000(3)
VIN ≤ Max(VDDXXX)
FT_xx input leakage
current(3)
Ilkg
FT_lu, FT_u and
PC3 IO
TT_xx input leakage
current
(4)
Unit
nA
RPU
Weak pull-up
V = VSS
equivalent resistor (8) IN
25
40
55
kΩ
RPD
Weak pull-down
VIN = VDDIOx
equivalent resistor(8)
25
40
55
kΩ
CIO
I/O pin capacitance
-
5
-
pF
-
1. Refer to Figure 19: I/O input characteristics.
2. Tested in production.
3. Guaranteed by design.
4. Max(VDDXXX) is the maximum value of all the I/O supplies. Refer to Table: Legend/Abbreviations used in the pinout table.
5. All TX_xx IO except FT_lu, FT_u and PC3.
6. This value represents the pad leakage of the IO itself. The total product pad leakage is provided by this formula:
ITotal_Ileak_max = 10 µA + [number of IOs where VIN is applied on the pad] ₓ Ilkg(Max).
7. To sustain a voltage higher than MIN(VDD, VDDA, VDDUSB) +0.3 V, the internal Pull-up and Pull-Down resistors must be
disabled.
8. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
PMOS/NMOS contribution to the series resistance is minimal (~10% order).
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181
Electrical characteristics
STM32L475xx
All I/Os are CMOS- and TTL-compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in Figure 19 for standard I/Os, and in Figure 19 for
5 V tolerant I/Os.
Figure 19. I/O input characteristics
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Output driving current
The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and sink or
source up to ± 20 mA (with a relaxed VOL/VOH).
In the user application, the number of I/O pins which can drive current must be limited to
respect the absolute maximum rating specified in Section 6.2:
128/193
•
The sum of the currents sourced by all the I/Os on VDDIOx, plus the maximum
consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating
ΣIVDD (see Table 19: Voltage characteristics).
•
The sum of the currents sunk by all the I/Os on VSS, plus the maximum consumption of
the MCU sunk on VSS, cannot exceed the absolute maximum rating ΣIVSS (see
Table 19: Voltage characteristics).
DocID027692 Rev 2
STM32L475xx
Electrical characteristics
Output voltage levels
Unless otherwise specified, the parameters given in the table below are derived from tests
performed under the ambient temperature and supply voltage conditions summarized in
Table 22: General operating conditions. All I/Os are CMOS- and TTL-compliant (FT OR TT
unless otherwise specified).
Table 60. Output voltage characteristics(1)
Symbol
VOL
VOH
Parameter
Conditions
Min
Max
-
0.4
VDDIOx-0.4
-
-
0.4
2.4
-
-
1.3
VDDIOx-1.3
-
-
0.45
VDDIOx-0.45
-
-
0.35ₓVDDIOx
0.65ₓVDDIOx
-
|IIO| = 20 mA
VDDIOx ≥ 2.7 V
-
0.4
|IIO| = 10 mA
VDDIOx ≥ 1.62 V
-
0.4
|IIO| = 2 mA
1.62 V ≥ VDDIOx ≥ 1.08 V
-
0.4
(2)
Output low level voltage for an I/O pin
CMOS port
|IIO| = 8 mA
Output high level voltage for an I/O pin V
DDIOx ≥ 2.7 V
VOH(3)
TTL port(2)
|IIO| = 8 mA
Output high level voltage for an I/O pin V
DDIOx ≥ 2.7 V
VOL(3)
Output low level voltage for an I/O pin
VOL(3)
VOH
VOL
(3)
(3)
Output low level voltage for an I/O pin
|IIO| = 20 mA
Output high level voltage for an I/O pin VDDIOx ≥ 2.7 V
Output low level voltage for an I/O pin
VOH(3)
|IIO| = 4 mA
Output high level voltage for an I/O pin VDDIOx ≥ 1.62 V
VOL(3)
Output low level voltage for an I/O pin
VOH
(3)
VOLFM+
(3)
|IIO| = 2 mA
Output high level voltage for an I/O pin 1.62 V ≥ VDDIOx ≥ 1.08 V
Output low level voltage for an FT I/O
pin in FM+ mode (FT I/O with "f"
option)
Unit
V
1. The IIO current sourced or sunk by the device must always respect the absolute maximum rating specified in Table 19:
Voltage characteristics, and the sum of the currents sourced or sunk by all the I/Os (I/O ports and control pins) must always
respect the absolute maximum ratings ΣIIO.
2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.
3. Guaranteed by design.
Input/output AC characteristics
The definition and values of input/output AC characteristics are given in Figure 20 and
Table 61, respectively.
Unless otherwise specified, the parameters given are derived from tests performed under
the ambient temperature and supply voltage conditions summarized in Table 22: General
operating conditions.
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Electrical characteristics
STM32L475xx
Table 61. I/O AC characteristics(1)(2)
Speed Symbol
Fmax
Parameter
Maximum frequency
00
Tr/Tf
Fmax
Output rise and fall time
Maximum frequency
01
Tr/Tf
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Output rise and fall time
Conditions
Min
Max
C=50 pF, 2.7 V≤VDDIOx≤3.6 V
-
5
C=50 pF, 1.62 V≤VDDIOx≤2.7 V
-
1
C=50 pF, 1.08 V≤VDDIOx≤1.62 V
-
0.1
C=10 pF, 2.7 V≤VDDIOx≤3.6 V
-
10
C=10 pF, 1.62 V≤VDDIOx≤2.7 V
-
1.5
C=10 pF, 1.08 V≤VDDIOx≤1.62 V
-
0.1
C=50 pF, 2.7 V≤VDDIOx≤3.6 V
-
25
C=50 pF, 1.62 V≤VDDIOx≤2.7 V
-
52
C=50 pF, 1.08 V≤VDDIOx≤1.62 V
-
140
C=10 pF, 2.7 V≤VDDIOx≤3.6 V
-
17
C=10 pF, 1.62 V≤VDDIOx≤2.7 V
-
37
C=10 pF, 1.08 V≤VDDIOx≤1.62 V
-
110
C=50 pF, 2.7 V≤VDDIOx≤3.6 V
-
25
C=50 pF, 1.62 V≤VDDIOx≤2.7 V
-
10
C=50 pF, 1.08 V≤VDDIOx≤1.62 V
-
1
C=10 pF, 2.7 V≤VDDIOx≤3.6 V
-
50
C=10 pF, 1.62 V≤VDDIOx≤2.7 V
-
15
C=10 pF, 1.08 V≤VDDIOx≤1.62 V
-
1
C=50 pF, 2.7 V≤VDDIOx≤3.6 V
-
9
C=50 pF, 1.62 V≤VDDIOx≤2.7 V
-
16
C=50 pF, 1.08 V≤VDDIOx≤1.62 V
-
40
C=10 pF, 2.7 V≤VDDIOx≤3.6 V
-
4.5
C=10 pF, 1.62 V≤VDDIOx≤2.7 V
-
9
C=10 pF, 1.08 V≤VDDIOx≤1.62 V
-
21
DocID027692 Rev 2
Unit
MHz
ns
MHz
ns
STM32L475xx
Electrical characteristics
Table 61. I/O AC characteristics(1)(2) (continued)
Speed Symbol
Fmax
Parameter
Maximum frequency
10
Tr/Tf
Fmax
Output rise and fall time
Maximum frequency
11
Tr/Tf
Fm+
Fmax
Tf
Output rise and fall time
Maximum frequency
(4)
Output fall time
Conditions
Min
Max
C=50 pF, 2.7 V≤VDDIOx≤3.6 V
-
50
C=50 pF, 1.62 V≤VDDIOx≤2.7 V
-
25
C=50 pF, 1.08 V≤VDDIOx≤1.62 V
-
5
C=10 pF, 2.7 V≤VDDIOx≤3.6 V
-
100(3)
C=10 pF, 1.62 V≤VDDIOx≤2.7 V
-
37.5
C=10 pF, 1.08 V≤VDDIOx≤1.62 V
-
5
C=50 pF, 2.7 V≤VDDIOx≤3.6 V
-
5.8
C=50 pF, 1.62 V≤VDDIOx≤2.7 V
-
11
C=50 pF, 1.08 V≤VDDIOx≤1.62 V
-
28
C=10 pF, 2.7 V≤VDDIOx≤3.6 V
-
2.5
C=10 pF, 1.62 V≤VDDIOx≤2.7 V
-
5
C=10 pF, 1.08 V≤VDDIOx≤1.62 V
-
12
C=30 pF, 2.7 V≤VDDIOx≤3.6 V
-
120(3)
C=30 pF, 1.62 V≤VDDIOx≤2.7 V
-
50
C=30 pF, 1.08 V≤VDDIOx≤1.62 V
-
10
C=10 pF, 2.7 V≤VDDIOx≤3.6 V
-
180(3)
C=10 pF, 1.62 V≤VDDIOx≤2.7 V
-
75
C=10 pF, 1.08 V≤VDDIOx≤1.62 V
-
10
C=30 pF, 2.7 V≤VDDIOx≤3.6 V
-
3.3
C=30 pF, 1.62 V≤VDDIOx≤2.7 V
-
6
C=30 pF, 1.08 V≤VDDIOx≤1.62 V
-
16
-
1
MHz
-
5
ns
C=50 pF, 1.6 V≤VDDIOx≤3.6 V
Unit
MHz
ns
MHz
ns
1. The I/O speed is configured using the OSPEEDRy[1:0] bits. The Fm+ mode is configured in the SYSCFG_CFGR1 register.
Refer to the RM0395 reference manual for a description of GPIO Port configuration register.
2. Guaranteed by design.
3. This value represents the I/O capability but the maximum system frequency is limited to 80 MHz.
4. The fall time is defined between 70% and 30% of the output waveform accordingly to I2C specification.
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STM32L475xx
Figure 20. I/O AC characteristics definition(1)
W I,2RXW
W U,2RXW
7
0D[LPXPIUHTXHQF\LVDFKLHYHGLIWW”7DQGLIWKHGXW\F\FOHLV
U I
ZKHQORDGHGE\WKHVSHFLILHGFDSDFLWDQFH
069
1. Refer to Table 61: I/O AC characteristics.
6.3.15
NRST pin characteristics
The NRST pin input driver uses the CMOS technology. It is connected to a permanent pullup resistor, RPU.
Unless otherwise specified, the parameters given in the table below are derived from tests
performed under the ambient temperature and supply voltage conditions summarized in
Table 22: General operating conditions.
Table 62. NRST pin characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
-
-
0.3ₓVDDIOx
Unit
VIL(NRST)
NRST input low level
voltage
-
VIH(NRST)
NRST input high level
voltage
-
0.7ₓVDDIOx
-
-
Vhys(NRST)
NRST Schmitt trigger
voltage hysteresis
-
-
200
-
mV
RPU
Weak pull-up
equivalent resistor(2)
VIN = VSS
25
40
55
kΩ
-
-
-
70
ns
1.71 V ≤ VDD ≤ 3.6 V
350
-
-
ns
VF(NRST)
NRST input filtered
pulse
VNF(NRST)
NRST input not filtered
pulse
1.
V
Guaranteed by design.
2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series
resistance is minimal (~10% order).
132/193
DocID027692 Rev 2
STM32L475xx
Electrical characteristics
Figure 21. Recommended NRST pin protection
([WHUQDO
UHVHWFLUFXLW 9 ''
5 38
1567 ,QWHUQDOUHVHW
)LOWHU
—)
069
1. The reset network protects the device against parasitic resets.
2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in
Table 62: NRST pin characteristics. Otherwise the reset will not be taken into account by the device.
6.3.16
Analog switches booster
Table 63. Analog switches booster characteristics(1)
Symbol
VDD
VBOOST
tSU(BOOST)
IDD(BOOST)
Parameter
Min
Typ
Max
Supply voltage
1.62
-
3.6
Boost supply
2.7
-
4
Booster startup time
-
-
240
Booster consumption for
1.62 V ≤ VDD ≤ 2.0 V
-
-
250
Booster consumption for
2.0 V ≤ VDD ≤ 2.7 V
-
-
500
Booster consumption for
2.7 V ≤ VDD ≤ 3.6 V
-
-
900
Unit
V
µs
µA
1. Guaranteed by design.
DocID027692 Rev 2
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181
Electrical characteristics
6.3.17
STM32L475xx
Analog-to-Digital converter characteristics
Unless otherwise specified, the parameters given in Table 64 are preliminary values derived
from tests performed under ambient temperature, fPCLK frequency and VDDA supply voltage
conditions summarized in Table 22: General operating conditions.
Note:
It is recommended to perform a calibration after each power-up.
Table 64. ADC characteristics(1) (2)
Symbol
Parameter
VDDA
Analog supply voltage
VREF+
Positive reference voltage
VREF-
Negative reference
voltage
fADC
ADC clock frequency
Min
Typ
Max
Unit
-
1.62
-
3.6
V
2
-
VDDA
V
VDDA ≥ 2 V
VDDA < 2 V
-
VDDA
V
VSSA
V
Range 1
-
-
80
Range 2
-
-
26
Resolution = 12 bits
-
-
5.33
Resolution = 10 bits
-
-
6.15
Resolution = 8 bits
-
-
7.27
Resolution = 6 bits
-
-
8.88
Resolution = 12 bits
-
-
4.21
Resolution = 10 bits
-
-
4.71
Resolution = 8 bits
-
-
5.33
Resolution = 6 bits
-
-
6.15
fADC = 80 MHz
Resolution
= 12 bits
External trigger frequency
-
-
5.33
MHz
Resolution = 12 bits
-
-
15
1/fADC
Sampling rate for FAST
channels
fs
Sampling rate for SLOW
channels
fTRIG
Conditions
MHz
Msps
Conversion voltage
range(2)
-
0
-
VREF+
V
RAIN
External input impedance
-
-
-
50
kΩ
CADC
Internal sample and hold
capacitor
-
-
5
-
pF
tSTAB
Power-up time
-
tCAL
Calibration time
tLATR
Trigger conversion
latency Regular and
injected channels without
conversion abort
VAIN (3)
134/193
fADC = 80 MHz
-
1
conversion
cycle
1.45
µs
116
1/fADC
CKMODE = 00
1.5
2
2.5
CKMODE = 01
-
-
2.0
CKMODE = 10
-
-
2.25
CKMODE = 11
-
-
2.125
DocID027692 Rev 2
1/fADC
STM32L475xx
Electrical characteristics
Table 64. ADC characteristics(1) (2) (continued)
Symbol
tLATRINJ
ts
Parameter
Conditions
Sampling time
IDDV_S(ADC)
IDDV_D(ADC)
Max
2.5
3
3.5
-
-
3.0
-
-
3.25
-
-
3.125
0.03125
-
8.00625
µs
-
2.5
-
640.5
1/fADC
-
-
-
20
µs
0.1875
-
8.1625
µs
fADC = 80 MHz
ADC voltage regulator
IDDA(ADC)
Typ
CKMODE = 00
Trigger conversion
latency Injected channels CKMODE = 01
aborting a regular
CKMODE = 10
conversion
CKMODE = 11
tADCVREG_STUP start-up time
tCONV
Min
Total conversion time
(including sampling time)
ADC consumption from
the VDDA supply
ADC consumption from
the VREF+ single ended
mode
ADC consumption from
the VREF+ differential
mode
fADC = 80 MHz
Resolution = 12 bits
Resolution = 12 bits
ts + 12.5 cycles for
successive approximation
= 15 to 653
fs = 5 Msps
-
730
830
fs = 1 Msps
-
160
220
fs = 10 ksps
-
16
50
fs = 5 Msps
-
130
160
fs = 1 Msps
-
30
40
fs = 10 ksps
-
0.6
2
fs = 5 Msps
-
260
310
fs = 1 Msps
-
60
70
fs = 10 ksps
-
1.3
3
Unit
1/fADC
1/fADC
µA
µA
µA
1. Guaranteed by design
2. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4V). It is disable when VDDA ≥ 2.4 V.
3. VREF+ can be internally connected to VDDA and VREF- can be internally connected to VSSA, depending on the package.
Refer to Section 4: Pinouts and pin description for further details.
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181
Electrical characteristics
STM32L475xx
Equation 1: RAIN max formula
TS
- – R ADC
R AIN < --------------------------------------------------------------N+2
f ADC × C ADC × ln ( 2
)
The formula above (Equation 1) is used to determine the maximum external impedance
allowed for an error below 1/4 of LSB. Here N = 12 (from 12-bit resolution).
Table 65. Maximum ADC RAIN(1)(2)
Resolution
12 bits
10 bits
8 bits
136/193
Sampling cycle
@80 MHz
Sampling time [ns]
@80 MHz
2.5
RAIN max (Ω)
Fast channels(3)
Slow channels(4)
31.25
100
N/A
6.5
81.25
330
100
12.5
156.25
680
470
24.5
306.25
1500
1200
47.5
593.75
2200
1800
92.5
1156.25
4700
3900
247.5
3093.75
12000
10000
640.5
8006.75
39000
33000
2.5
31.25
120
N/A
6.5
81.25
390
180
12.5
156.25
820
560
24.5
306.25
1500
1200
47.5
593.75
2200
1800
92.5
1156.25
5600
4700
247.5
3093.75
12000
10000
640.5
8006.75
47000
39000
2.5
31.25
180
N/A
6.5
81.25
470
270
12.5
156.25
1000
680
24.5
306.25
1800
1500
47.5
593.75
2700
2200
92.5
1156.25
6800
5600
247.5
3093.75
15000
12000
640.5
8006.75
50000
50000
DocID027692 Rev 2
STM32L475xx
Electrical characteristics
Table 65. Maximum ADC RAIN(1)(2) (continued)
Resolution
6 bits
Sampling cycle
@80 MHz
Sampling time [ns]
@80 MHz
2.5
RAIN max (Ω)
Fast channels(3)
Slow channels(4)
31.25
220
N/A
6.5
81.25
560
330
12.5
156.25
1200
1000
24.5
306.25
2700
2200
47.5
593.75
3900
3300
92.5
1156.25
8200
6800
247.5
3093.75
18000
15000
640.5
8006.75
50000
50000
1. Guaranteed by design.
2. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4V). It is disable when VDDA ≥ 2.4 V.
3. Fast channels are: PC0, PC1, PC2, PC3, PA0, PA1.
4. Slow channels are: all ADC inputs except the fast channels.
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181
Electrical characteristics
STM32L475xx
Table 66. ADC accuracy - limited test conditions 1(1)(2)(3)
Symbol
Parameter
ET
Total
unadjusted
error
EO
Conditions(4)
Single
ended
Differential
Single
ended
Offset
error
Differential
Single
ended
EG
Gain error
Differential
ED
EL
Differential
linearity
ADC clock frequency ≤
error
80 MHz,
Sampling rate ≤ 5.33 Msps,
VDDA = VREF+ = 3 V,
Integral
TA = 25 °C
linearity
error
Effective
ENOB number of
bits
Signal-tonoise and
SINAD
distortion
ratio
SNR
Signal-tonoise ratio
Single
ended
Differential
Single
ended
Differential
Single
ended
Differential
Single
ended
Differential
Single
ended
Differential
138/193
Min Typ Max Unit
Fast channel (max speed)
-
4
5
Slow channel (max speed)
-
4
5
Fast channel (max speed)
-
3.5
4.5
Slow channel (max speed)
-
3.5
4.5
Fast channel (max speed)
-
1
2.5
Slow channel (max speed)
-
1
2.5
Fast channel (max speed)
-
1.5
2.5
Slow channel (max speed)
-
1.5
2.5
Fast channel (max speed)
-
2.5
4.5
Slow channel (max speed)
-
2.5
4.5
Fast channel (max speed)
-
2.5
3.5
Slow channel (max speed)
-
2.5
3.5
Fast channel (max speed)
-
1
1.5
Slow channel (max speed)
-
1
1.5
Fast channel (max speed)
-
1
1.2
Slow channel (max speed)
-
1
1.2
Fast channel (max speed)
-
1.5
2.5
Slow channel (max speed)
-
1.5
2.5
Fast channel (max speed)
-
1
2
Slow channel (max speed)
-
1
2
Fast channel (max speed) 10.4 10.5
-
Slow channel (max speed) 10.4 10.5
-
Fast channel (max speed) 10.8 10.9
-
Slow channel (max speed) 10.8 10.9
-
Fast channel (max speed) 64.4
65
-
Slow channel (max speed) 64.4
65
-
Fast channel (max speed) 66.8 67.4
-
Slow channel (max speed) 66.8 67.4
-
Fast channel (max speed)
65
66
-
Slow channel (max speed)
65
66
-
Fast channel (max speed)
67
68
-
Slow channel (max speed)
67
68
-
DocID027692 Rev 2
LSB
bits
dB
STM32L475xx
Electrical characteristics
Table 66. ADC accuracy - limited test conditions 1(1)(2)(3) (continued)
Symbol
THD
Conditions(4)
Parameter
Total
harmonic
distortion
ADC clock frequency ≤
Single
80 MHz,
ended
Sampling rate ≤ 5.33 Msps,
VDDA = VREF+ = 3 V,
Differential
TA = 25 °C
Min Typ Max Unit
Fast channel (max speed)
-
-74
-73
Slow channel (max speed)
-
-74
-73
Fast channel (max speed)
-
-79
-76
Slow channel (max speed)
-
-79
-76
dB
1. Guaranteed by design.
2. ADC DC accuracy values are measured after internal calibration.
3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
4. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4 V). It is disable when VDDA ≥ 2.4 V. No oversampling.
DocID027692 Rev 2
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181
Electrical characteristics
STM32L475xx
Table 67. ADC accuracy - limited test conditions 2(1)(2)(3)
Symbol
Parameter
ET
Total
unadjusted
error
EO
Conditions(4)
Single
ended
Differential
Single
ended
Offset
error
Differential
Single
ended
EG
Gain error
Differential
ED
EL
Differential
linearity
error
ADC clock frequency ≤
80 MHz,
Sampling rate ≤ 5.33 Msps,
2 V ≤ VDDA
Integral
linearity
error
Effective
ENOB number of
bits
Signal-tonoise and
SINAD
distortion
ratio
SNR
Signal-tonoise ratio
Single
ended
Differential
Single
ended
Differential
Single
ended
Differential
Single
ended
Differential
Single
ended
Differential
140/193
Min Typ Max Unit
Fast channel (max speed)
-
4
6.5
Slow channel (max speed)
-
4
6.5
Fast channel (max speed)
-
3.5
5.5
Slow channel (max speed)
-
3.5
5.5
Fast channel (max speed)
-
1
4.5
Slow channel (max speed)
-
1
5
Fast channel (max speed)
-
1.5
3
Slow channel (max speed)
-
1.5
3
Fast channel (max speed)
-
2.5
6
Slow channel (max speed)
-
2.5
6
Fast channel (max speed)
-
2.5
3.5
Slow channel (max speed)
-
2.5
3.5
Fast channel (max speed)
-
1
1.5
Slow channel (max speed)
-
1
1.5
Fast channel (max speed)
-
1
1.2
Slow channel (max speed)
-
1
1.2
Fast channel (max speed)
-
1.5
3.5
Slow channel (max speed)
-
1.5
3.5
Fast channel (max speed)
-
1
3
Slow channel (max speed)
-
1
2.5
Fast channel (max speed)
10
10.5
-
Slow channel (max speed)
10
10.5
-
Fast channel (max speed) 10.7 10.9
-
Slow channel (max speed) 10.7 10.9
-
Fast channel (max speed)
62
65
-
Slow channel (max speed)
62
65
-
Fast channel (max speed)
66
67.4
-
Slow channel (max speed)
66
67.4
-
Fast channel (max speed)
64
66
-
Slow channel (max speed)
64
66
-
Fast channel (max speed) 66.5
68
-
Slow channel (max speed) 66.5
68
-
DocID027692 Rev 2
LSB
bits
dB
STM32L475xx
Electrical characteristics
Table 67. ADC accuracy - limited test conditions 2(1)(2)(3) (continued)
Symbol
THD
Conditions(4)
Parameter
Total
harmonic
distortion
Fast channel (max speed)
Single
ADC clock frequency ≤
ended
Slow channel (max speed)
80 MHz,
Sampling rate ≤ 5.33 Msps,
Fast channel (max speed)
Differential
2 V ≤ VDDA
Slow channel (max speed)
Min Typ Max Unit
-
-74
-65
-
-74
-67
-
-79
-70
-
-79
-71
dB
1. Guaranteed by design.
2. ADC DC accuracy values are measured after internal calibration.
3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
4. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4 V). It is disable when VDDA ≥ 2.4 V. No oversampling.
DocID027692 Rev 2
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181
Electrical characteristics
STM32L475xx
Table 68. ADC accuracy - limited test conditions 3(1)(2)(3)
Symbol
Parameter
ET
Total
unadjusted
error
EO
Conditions(4)
Single
ended
Differential
Single
ended
Offset
error
Differential
Single
ended
EG
Gain error
Differential
ED
EL
Differential
linearity
ADC clock frequency ≤
error
80 MHz,
Sampling rate ≤ 5.33 Msps,
1.65 V ≤ VDDA = VREF+ ≤
3.6 V,
Integral
Voltage scaling Range 1
linearity
error
Effective
ENOB number of
bits
Signal-tonoise and
SINAD
distortion
ratio
SNR
Signal-tonoise ratio
Single
ended
Differential
Single
ended
Differential
Single
ended
Differential
Single
ended
Differential
Single
ended
Differential
142/193
Min Typ Max Unit
Fast channel (max speed)
-
5.5
7.5
Slow channel (max speed)
-
4.5
6.5
Fast channel (max speed)
-
4.5
7.5
Slow channel (max speed)
-
4.5
5.5
Fast channel (max speed)
-
2
5
Slow channel (max speed)
-
2.5
5
Fast channel (max speed)
-
2
3.5
Slow channel (max speed)
-
2.5
3
Fast channel (max speed)
-
4.5
7
Slow channel (max speed)
-
3.5
6
Fast channel (max speed)
-
3.5
4
Slow channel (max speed)
-
3.5
5
Fast channel (max speed)
-
1.2
1.5
Slow channel (max speed)
-
1.2
1.5
Fast channel (max speed)
-
1
1.2
Slow channel (max speed)
-
1
1.2
Fast channel (max speed)
-
3
3.5
Slow channel (max speed)
-
2.5
3.5
Fast channel (max speed)
-
2
2.5
Slow channel (max speed)
-
2
2.5
Fast channel (max speed)
10
10.4
-
Slow channel (max speed)
10
10.4
-
Fast channel (max speed) 10.6 10.7
-
Slow channel (max speed) 10.6 10.7
-
Fast channel (max speed)
62
64
-
Slow channel (max speed)
62
64
-
Fast channel (max speed)
65
66
-
Slow channel (max speed)
65
66
-
Fast channel (max speed)
63
65
-
Slow channel (max speed)
63
65
-
Fast channel (max speed)
66
67
-
Slow channel (max speed)
66
67
-
DocID027692 Rev 2
LSB
bits
dB
STM32L475xx
Electrical characteristics
Table 68. ADC accuracy - limited test conditions 3(1)(2)(3) (continued)
Symbol
THD
Conditions(4)
Parameter
Total
harmonic
distortion
ADC clock frequency ≤
Single
80 MHz,
ended
Sampling rate ≤ 5.33 Msps,
1.65 V ≤ VDDA = VREF+ ≤
Differential
3.6 V,
Voltage scaling Range 1
Min Typ Max Unit
Fast channel (max speed)
-
-69
-67
Slow channel (max speed)
-
-71
-67
Fast channel (max speed)
-
-72
-71
Slow channel (max speed)
-
-72
-71
dB
1. Guaranteed by design.
2. ADC DC accuracy values are measured after internal calibration.
3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
4. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4 V). It is disable when VDDA ≥ 2.4 V. No oversampling.
DocID027692 Rev 2
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181
Electrical characteristics
STM32L475xx
Table 69. ADC accuracy - limited test conditions 4(1)(2)(3)
Symbol
Parameter
ET
Total
unadjusted
error
EO
Conditions(4)
Single
ended
Differential
Single
ended
Offset
error
Differential
Single
ended
EG
Gain error
Differential
ED
EL
Differential
linearity
ADC clock frequency ≤
error
26 MHz,
1.65 V ≤ VDDA = VREF+ ≤
3.6 V,
Integral
Voltage scaling Range 2
linearity
error
Effective
ENOB number of
bits
Signal-tonoise and
SINAD
distortion
ratio
SNR
Signal-tonoise ratio
Single
ended
Differential
Single
ended
Differential
Single
ended
Differential
Single
ended
Differential
Single
ended
Differential
144/193
Min Typ Max Unit
Fast channel (max speed)
-
5
5.4
Slow channel (max speed)
-
4
5
Fast channel (max speed)
-
4
5
Slow channel (max speed)
-
3.5
4.5
Fast channel (max speed)
-
2
4
Slow channel (max speed)
-
2
4
Fast channel (max speed)
-
2
3.5
Slow channel (max speed)
-
2
3.5
Fast channel (max speed)
-
4
4.5
Slow channel (max speed)
-
4
4.5
Fast channel (max speed)
-
3
4
Slow channel (max speed)
-
3
4
Fast channel (max speed)
-
1
1.5
Slow channel (max speed)
-
1
1.5
Fast channel (max speed)
-
1
1.2
Slow channel (max speed)
-
1
1.2
Fast channel (max speed)
-
2.5
3
Slow channel (max speed)
-
2.5
3
Fast channel (max speed)
-
2
2.5
Slow channel (max speed)
-
2
2.5
Fast channel (max speed) 10.2 10.5
-
Slow channel (max speed) 10.2 10.5
-
Fast channel (max speed) 10.6 10.7
-
Slow channel (max speed) 10.6 10.7
-
Fast channel (max speed)
63
65
-
Slow channel (max speed)
63
65
-
Fast channel (max speed)
65
66
-
Slow channel (max speed)
65
66
-
Fast channel (max speed)
64
65
-
Slow channel (max speed)
64
65
-
Fast channel (max speed)
66
67
-
Slow channel (max speed)
66
67
-
DocID027692 Rev 2
LSB
bits
dB
STM32L475xx
Electrical characteristics
Table 69. ADC accuracy - limited test conditions 4(1)(2)(3) (continued)
Symbol
THD
Conditions(4)
Parameter
Total
harmonic
distortion
ADC clock frequency ≤
26 MHz,
1.65 V ≤ VDDA = VREF+ ≤
3.6 V,
Voltage scaling Range 2
Single
ended
Differential
Min Typ Max Unit
Fast channel (max speed)
-
-71
-69
Slow channel (max speed)
-
-71
-69
Fast channel (max speed)
-
-73
-72
Slow channel (max speed)
-
-73
-72
dB
1. Guaranteed by design.
2. ADC DC accuracy values are measured after internal calibration.
3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this
significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a
Schottky diode (pin to ground) to analog pins which may potentially inject negative current.
4. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when
VDDA < 2.4 V). It is disable when VDDA ≥ 2.4 V. No oversampling.
DocID027692 Rev 2
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Electrical characteristics
STM32L475xx
Figure 22. ADC accuracy characteristics
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1. Refer to Table 64: ADC characteristics for the values of RAIN, RADC and CADC.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (refer to Table 59: I/O static characteristics for the value of the pad capacitance). A high
Cparasitic value will downgrade conversion accuracy. To remedy this, fADC should be reduced.
3. Refer to Table 59: I/O static characteristics for the values of Ilkg.
General PCB design guidelines
Power supply decoupling should be performed as shown in Figure 10: Power supply
scheme. The 10 nF capacitor should be ceramic (good quality) and it should be placed as
close as possible to the chip.
146/193
DocID027692 Rev 2
STM32L475xx
6.3.18
Electrical characteristics
Digital-to-Analog converter characteristics
Table 70. DAC characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
VDDA
Analog supply voltage for
DAC ON
-
1.8
-
3.6
VREF+
Positive reference voltage
-
1.8
-
VDDA
VREF-
Negative reference
voltage
5
-
-
connected to VDDA
25
-
-
9.6
11.7
13.8
Resistive load
DAC output
buffer ON
RO
Output Impedance
DAC output buffer OFF
V
VSSA
connected to VSSA
RL
Unit
kΩ
kΩ
Output impedance sample VDD = 2.7 V
and hold mode, output
VDD = 2.0 V
buffer ON
-
-
2
RBON
-
-
3.5
Output impedance sample VDD = 2.7 V
and hold mode, output
VDD = 2.0 V
buffer OFF
-
-
16.5
RBOFF
-
-
18.0
DAC output buffer ON
-
-
50
pF
Sample and hold mode
-
0.1
1
µF
Voltage on DAC_OUT
output
DAC output buffer ON
0.2
-
VREF+
– 0.2
V
DAC output buffer OFF
0
-
VREF+
Settling time (full scale: for
a 12-bit code transition
between the lowest and
the highest input codes
when DAC_OUT reaches
final value ±0.5LSB,
±1 LSB, ±2 LSB, ±4 LSB,
±8 LSB)
±0.5 LSB
-
1.7
3
Normal mode
DAC output
buffer ON
CL ≤ 50 pF,
RL ≥ 5 kΩ
±1 LSB
-
1.6
2.9
±2 LSB
-
1.55
2.85
±4 LSB
-
1.48
2.8
±8 LSB
-
1.4
2.75
Normal mode DAC output buffer
OFF, ±1LSB, CL = 10 pF
-
2
2.5
Wakeup time from off state
(setting the ENx bit in the
DAC Control register) until
final value ±1 LSB
Normal mode DAC output buffer ON
CL ≤ 50 pF, RL ≥ 5 kΩ
-
4.2
7.5
Normal mode DAC output buffer
OFF, CL ≤ 10 pF
-
2
5
Normal mode DAC output buffer ON
CL ≤ 50 pF, RL = 5 kΩ, DC
-
-80
-28
CL
CSH
VDAC_OUT
tSETTLING
tWAKEUP(2)
PSRR
Capacitive load
VDDA supply rejection ratio
DocID027692 Rev 2
kΩ
kΩ
µs
µs
dB
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Electrical characteristics
STM32L475xx
Table 70. DAC characteristics(1) (continued)
Symbol
tSAMP
Parameter
Sampling time in sample
and hold mode (code
transition between the
lowest input code and the
highest input code when
DACOUT reaches final
value ±1LSB)
Ileak
Output leakage current
CIint
Internal sample and hold
capacitor
tTRIM
Middle code offset trim
time
Voffset
Middle code offset for 1
trim code step
Conditions
DAC output buffer
ON, CSH = 100 nF
DAC_OUT
pin connected DAC output buffer
OFF, CSH = 100 nF
DAC consumption from
VDDA
-
0.7
3.5
ms
-
2
3.5
µs
-
-
-(3)
nA
5.2
7
8.8
pF
50
-
-
µs
VREF+ = 3.6 V
-
1500
-
VREF+ = 1.8 V
-
750
-
No load, middle
code (0x800)
-
315
500
No load, worst code
(0xF1C)
-
450
670
No load, middle
code (0x800)
-
-
0.2
DAC_OUT
pin not
connected
(internal
connection
only)
DAC output buffer
OFF
Sample and hold mode,
DAC_OUT pin connected
DAC output buffer ON
DAC output
buffer OFF
DAC output
buffer OFF
-
(4)
(4)
-
185
240
No load, worst code
(0xF1C)
-
340
400
No load, middle
code (0x800)
-
155
205
Sample and hold mode, buffer ON,
CSH = 100 nF, worst case
-
185 ₓ
400 ₓ
Ton/(Ton Ton/(Ton
+Toff)
+Toff)
(4)
-
(4)
205 ₓ
155 ₓ
Ton/(Ton Ton/(Ton
+Toff)
+Toff)
(4)
1. Guaranteed by design.
2. In buffered mode, the output can overshoot above the final value for low input code (starting from min value).
DocID027692 Rev 2
µV
µA
670 ₓ
315 ₓ
Ton/(Ton Ton/(Ton
+Toff)
+Toff)
No load, middle
code (0x800)
Sample and hold mode, buffer OFF,
CSH = 100 nF, worst case
148/193
Unit
18
DAC output
buffer ON
DAC consumption from
VREF+
Max
10.5
Sample and hold mode, CSH =
100 nF
IDDV(DAC)
Typ
-
DAC output
buffer ON
IDDA(DAC)
Min
(4)
µA
STM32L475xx
Electrical characteristics
3. Refer to Table 59: I/O static characteristics.
4. Ton is the Refresh phase duration. Toff is the Hold phase duration. Refer to RM0395 reference manual for more details.
Figure 24. 12-bit buffered / non-buffered DAC
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1. The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external loads directly
without the use of an external operational amplifier. The buffer can be bypassed by configuring the BOFFx bit in the
DAC_CR register.
Table 71. DAC accuracy(1)
.
Symbol
Parameter
DNL
Differential non
linearity (2)
-
monotonicity
10 bits
INL
Integral non
linearity(3)
Offset
Offset1
OffsetCal
Offset error at
code 0x800(3)
Offset error at
code 0x001(4)
Conditions
Min
Typ
Max
DAC output buffer ON
-
-
±2
DAC output buffer OFF
-
-
±2
Unit
guaranteed
DAC output buffer ON
CL ≤ 50 pF, RL ≥ 5 kΩ
-
-
±4
DAC output buffer OFF
CL ≤ 50 pF, no RL
-
-
±4
VREF+ = 3.6 V
-
-
±12
VREF+ = 1.8 V
-
-
±25
DAC output buffer OFF
CL ≤ 50 pF, no RL
-
-
±8
DAC output buffer OFF
CL ≤ 50 pF, no RL
-
-
±5
VREF+ = 3.6 V
-
-
±5
VREF+ = 1.8 V
-
-
±7
DAC output buffer ON
CL ≤ 50 pF, RL ≥ 5 kΩ
Offset Error at
DAC output buffer ON
code 0x800
CL ≤ 50 pF, RL ≥ 5 kΩ
after calibration
LSB
DocID027692 Rev 2
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181
Electrical characteristics
STM32L475xx
Table 71. DAC accuracy(1) (continued)
Symbol
Gain
TUE
TUECal
SNR
THD
SINAD
ENOB
Parameter
Gain error(5)
Total
unadjusted
error
Total
unadjusted
error after
calibration
Signal-to-noise
ratio
Total harmonic
distortion
Signal-to-noise
and distortion
ratio
Effective
number of bits
Conditions
Min
Typ
Max
DAC output buffer ON
CL ≤ 50 pF, RL ≥ 5 kΩ
-
-
±0.5
DAC output buffer OFF
CL ≤ 50 pF, no RL
-
-
±0.5
DAC output buffer ON
CL ≤ 50 pF, RL ≥ 5 kΩ
-
-
±30
DAC output buffer OFF
CL ≤ 50 pF, no RL
-
-
±12
DAC output buffer ON
CL ≤ 50 pF, RL ≥ 5 kΩ
-
-
±23
DAC output buffer ON
CL ≤ 50 pF, RL ≥ 5 kΩ
1 kHz, BW 500 kHz
-
71.2
-
DAC output buffer OFF
CL ≤ 50 pF, no RL, 1 kHz
BW 500 kHz
-
71.6
-
DAC output buffer ON
CL ≤ 50 pF, RL ≥ 5 kΩ, 1 kHz
-
-78
-
DAC output buffer OFF
CL ≤ 50 pF, no RL, 1 kHz
-
-79
-
DAC output buffer ON
CL ≤ 50 pF, RL ≥ 5 kΩ, 1 kHz
-
70.4
-
DAC output buffer OFF
CL ≤ 50 pF, no RL, 1 kHz
-
71
-
DAC output buffer ON
CL ≤ 50 pF, RL ≥ 5 kΩ, 1 kHz
-
11.4
-
DAC output buffer OFF
CL ≤ 50 pF, no RL, 1 kHz
-
Unit
%
LSB
LSB
dB
dB
dB
bits
11.5
-
1. Guaranteed by design.
2. Difference between two consecutive codes - 1 LSB.
3. Difference between measured value at Code i and the value at Code i on a line drawn between Code 0 and last Code 4095.
4. Difference between the value measured at Code (0x001) and the ideal value.
5. Difference between ideal slope of the transfer function and measured slope computed from code 0x000 and 0xFFF when
buffer is OFF, and from code giving 0.2 V and (VREF+ – 0.2) V when buffer is ON.
150/193
DocID027692 Rev 2
STM32L475xx
6.3.19
Electrical characteristics
Voltage reference buffer characteristics
Table 72. VREFBUF characteristics(1)
Symbol
Parameter
Conditions
Normal mode
VDDA
VREFBUF_
OUT
Analog supply
voltage
Voltage
reference
output
Degraded mode(2)
Normal mode
Degraded mode(2)
Min
Typ
Max
VRS = 0
2.4
-
3.6
VRS = 1
2.8
-
3.6
VRS = 0
1.65
-
2.4
VRS = 1
1.65
-
2.8
2.048
2.049(3)
(3)
VRS = 0
2.046
VRS = 1
2.498(3)
2.5
2.502(3)
VRS = 0
VDDA-150 mV
-
VDDA
VRS = 1
VDDA-150 mV
-
VDDA
Unit
V
Trim step
resolution
-
-
-
±0.05
±0.1
%
CL
Load capacitor
-
-
0.5
1
1.5
µF
esr
Equivalent
Serial Resistor
of Cload
-
-
-
-
2
Ω
Iload
Static load
current
-
-
-
-
4
mA
Iload = 500 µA
-
200
1000
Iload = 4 mA
-
100
500
500 μA ≤ Iload ≤4 mA Normal mode
-
50
500
-40 °C < TJ < +125 °C
-
-
TRIM
Iline_reg
Line regulation 2.8 V ≤ VDDA ≤ 3.6 V
Iload_reg
Load
regulation
TCoeff
Temperature
coefficient
PSRR
tSTART
Power supply
rejection
Start-up time
IINRUSH
Control of
maximum DC
current drive
on VREFBUF_
OUT during
start-up phase
vrefint +
-
-
Tcoeff_
vrefint +
50
DC
40
60
-
100 kHz
25
40
-
CL = 0.5 µF(4)
-
300
350
CL = 1.1 µF(4)
-
500
650
(4)
-
650
800
-
8
-
CL = 1.5 µF
-
-
ppm/mA
Tcoeff_
50
0 °C < TJ < +50 °C
ppm/V
ppm/ °C
dB
µs
mA
(5)
DocID027692 Rev 2
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181
Electrical characteristics
STM32L475xx
Table 72. VREFBUF characteristics(1) (continued)
Symbol
Parameter
VREFBUF
IDDA(VREF
consumption
BUF)
from VDDA
Conditions
Min
Typ
Max
Iload = 0 µA
-
16
25
Iload = 500 µA
-
18
30
Iload = 4 mA
-
35
50
Unit
µA
1. Guaranteed by design, unless otherwise specified.
2. In degraded mode, the voltage reference buffer can not maintain accurately the output voltage which will follow (VDDA drop voltage).
3. Guaranteed by test in production.
4. The capacitive load must include a 100 nF capacitor in order to cut-off the high frequency noise.
5. To correctly control the VREFBUF inrush current during start-up phase and scaling change, the VDDA voltage should be in
the range [2.4 V to 3.6 V] and [2.8 V to 3.6 V] respectively for VRS = 0 and VRS = 1.
152/193
DocID027692 Rev 2
STM32L475xx
6.3.20
Electrical characteristics
Comparator characteristics
Table 73. COMP characteristics(1)
Symbol
Conditions
Min
Typ
Max
Analog supply voltage
-
1.62
-
3.6
Comparator input voltage
range
-
0
-
VDDA
V
VBG(2)
Scaler input voltage
-
VSC
Scaler offset voltage
-
VDDA
VIN
IDDA(SCALER)
Parameter
VREFINT
-
±5
±10
mV
BRG_EN=0 (bridge disable)
-
200
300
nA
BRG_EN=1 (bridge enable)
-
0.8
1
µA
-
100
200
µs
VDDA ≥ 2.7 V
-
-
5
VDDA < 2.7 V
Comparator startup time to
VDDA ≥ 2.7 V
reach propagation delay
Medium mode
specification
VDDA < 2.7 V
-
-
7
-
-
15
-
-
25
-
-
80
VDDA ≥ 2.7 V
-
55
80
VDDA < 2.7 V
-
65
100
VDDA ≥ 2.7 V
-
0.55
0.9
VDDA < 2.7 V
-
0.65
1
-
5
12
-
±5
±20
No hysteresis
-
0
-
Low hysteresis
-
8
-
Medium hysteresis
-
15
-
High hysteresis
-
27
-
Static
-
400
600
With 50 kHz
±100 mV overdrive
square signal
-
1200
-
Static
-
5
7
-
6
-
Static
-
70
100
With 50 kHz
±100 mV overdrive
square signal
-
75
-
Scaler static consumption
from VDDA
tSTART_SCALER Scaler startup time
High-speed
mode
tSTART
Ultra-low-power mode
tD(3)
Propagation delay for
200 mV step
with 100 mV overdrive
High-speed
mode
Medium mode
Ultra-low-power mode
Voffset
Vhys
Comparator offset error
Comparator hysteresis
Full common
mode range
Ultra-lowpower mode
IDDA(COMP)
Unit
Comparator consumption
from VDDA
-
Medium mode With 50 kHz
±100 mV overdrive
square signal
High-speed
mode
DocID027692 Rev 2
µs
ns
µs
mV
mV
nA
µA
153/193
181
Electrical characteristics
STM32L475xx
1. Guaranteed by design, unless otherwise specified.
2. Refer to Table 25: Embedded internal voltage reference.
3. Guaranteed by characterization results.
6.3.21
Operational amplifiers characteristics
Table 74. OPAMP characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDDA
Analog supply
voltage(2)
-
1.8
-
3.6
V
CMIR
Common mode
input range
-
0
-
VDDA
V
25 °C, No Load on output.
-
-
±1.5
All voltage/Temp.
-
-
±3
Normal mode
-
±5
-
Low-power mode
-
±10
-
-
0.8
1.1
VIOFFSET
Input offset
voltage
∆VIOFFSET
Input offset
voltage drift
Offset trim step
TRIMOFFSETP at low common
TRIMLPOFFSETP input voltage
(0.1 ₓ VDDA)
-
Offset trim step
TRIMOFFSETN at high common
TRIMLPOFFSETN input voltage
(0.9 ₓ VDDA)
-
ILOAD
Drive current
ILOAD_PGA
Drive current in
PGA mode
RLOAD
Resistive load
(connected to
VSSA or to
VDDA)
RLOAD_PGA
Resistive load
in PGA mode
(connected to
VSSA or to
VDDA)
CLOAD
Capacitive load
CMRR
Common mode
rejection ratio
154/193
mV
μV/°C
mV
-
1
1.35
-
-
500
-
-
100
-
-
450
-
-
50
4
-
-
Low-power mode
20
-
-
Normal mode
4.5
-
-
40
-
-
-
-
50
Normal mode
-
-85
-
Low-power mode
-
-90
-
Normal mode
Low-power mode
Normal mode
Low-power mode
VDDA ≥ 2 V
VDDA ≥ 2 V
Normal mode
µA
VDDA < 2 V
kΩ
VDDA < 2 V
Low-power mode
-
DocID027692 Rev 2
pF
dB
STM32L475xx
Electrical characteristics
Table 74. OPAMP characteristics(1) (continued)
Symbol
PSRR
Parameter
Power supply
rejection ratio
Conditions
AO
VOHSAT
Open loop gain
(3)
High saturation
voltage
VOLSAT(3)
Low saturation
voltage
φm
Phase margin
GM
Gain margin
tWAKEUP
Ibias
PGA gain(3)
Non inverting
gain value
-
Low-power mode
CLOAD ≤ 50 pf,
RLOAD ≥ 20 kΩ DC
72
90
-
550
1600
2200
100
420
600
250
700
950
40
180
280
-
700
-
-
180
-
-
300
-
-
80
-
Normal mode
55
110
-
Low-power mode
45
110
-
-
-
-
-
-
-
100
-
-
50
Normal mode
-
74
-
Low-power mode
-
66
-
Normal mode
-
13
-
Low-power mode
-
20
-
Normal mode
CLOAD ≤ 50 pf,
RLOAD ≥ 4 kΩ
follower
configuration
-
5
10
Low-power mode
CLOAD ≤ 50 pf,
RLOAD ≥ 20 kΩ
follower
configuration
-
10
30
-
-
-(4)
-
2
-
-
4
-
-
8
-
-
16
-
Normal mode
Low-power mode
Normal mode
Low-power mode
Normal mode
Low-power mode
Normal mode
Low-power mode
Wake up time
from OFF state.
OPAMP input
bias current
85
70
Low-power mode
SR(3)
Max
CLOAD ≤ 50 pf,
RLOAD ≥ 4 kΩ DC
Gain Bandwidth Low-power mode
Product
Normal mode
Slew rate
(from 10 and
90% of output
voltage)
Typ
Normal mode
Normal mode
GBW
Min
VDDA ≥ 2.4 V
(OPA_RANGE = 1)
VDDA < 2.4 V
(OPA_RANGE = 0)
VDDA ≥ 2.4 V
VDDA < 2.4 V
dB
VDDA 100
Iload = max or Rload =
min Input at VDDA.
VDDA 50
Iload = max or Rload =
min Input at 0.
General purpose
input
-
-
DocID027692 Rev 2
Unit
kHz
V/ms
dB
mV
°
dB
µs
nA
-
155/193
181
Electrical characteristics
STM32L475xx
Table 74. OPAMP characteristics(1) (continued)
Symbol
Rnetwork
Parameter
R2/R1 internal
resistance
values in PGA
mode(5)
Conditions
Min
Typ
Max
PGA Gain = 2
-
80/80
-
PGA Gain = 4
-
120/
40
-
PGA Gain = 8
-
140/
20
-
PGA Gain = 16
-
150/
10
-
Unit
kΩ/kΩ
Delta R
Resistance
variation (R1 or
R2)
-
-15
-
15
%
PGA gain error
PGA gain error
-
-1
-
1
%
PGA BW
Gain = 2
-
-
GBW/
2
-
PGA bandwidth Gain = 4
for different non
inverting gain
Gain = 8
-
-
GBW/
4
-
-
-
GBW/
8
-
-
-
GBW/
16
-
Gain = 16
en
IDDA(OPAMP)(3)
Voltage noise
density
OPAMP
consumption
from VDDA
MHz
Normal mode
at 1 kHz, Output
loaded with 4 kΩ
-
500
-
Low-power mode
at 1 kHz, Output
loaded with 20 kΩ
-
600
-
Normal mode
at 10 kHz, Output
loaded with 4 kΩ
-
180
-
Low-power mode
at 10 kHz, Output
loaded with 20 kΩ
-
290
-
-
120
260
-
45
100
Normal mode
Low-power mode
no Load, quiescent
mode
nV/√Hz
1. Guaranteed by design, unless otherwise specified.
2. The temperature range is limited to 0 °C-125 °C when VDDA is below 2 V
3. Guaranteed by characterization results.
4. Mostly I/O leakage, when used in analog mode. Refer to Ilkg parameter in Table 59: I/O static characteristics.
5. R2 is the internal resistance between OPAMP output and OPAMP inverting input. R1 is the internal resistance between
OPAMP inverting input and ground. The PGA gain =1+R2/R1
156/193
DocID027692 Rev 2
µA
STM32L475xx
6.3.22
Electrical characteristics
Temperature sensor characteristics
Table 75. TS characteristics
Symbol
Parameter
TL(1)
Min
Typ
Max
Unit
-
±1
±2
°C
2.3
2.5
2.7
mV/°C
0.742
0.76
0.785
V
VTS linearity with temperature
(2)
Avg_Slope
Average slope
Voltage at 30°C (±5 °C)(3)
V30
tSTART
(TS_BUF)(1)
Sensor Buffer Start-up time in continuous mode(4)
-
8
15
µs
tSTART(1)
Start-up time when entering in continuous mode(4)
-
70
120
µs
tS_temp(1)
ADC sampling time when reading the temperature
5
-
-
µs
IDD(TS)(1)
Temperature sensor consumption from VDD, when
selected by ADC
-
4.7
7
µA
1. Guaranteed by design.
2. Guaranteed by characterization results.
3. Measured at VDDA = 3.0 V ±10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte. Refer to Table 8:
Temperature sensor calibration values.
4.
Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power sleep modes.
6.3.23
VBAT monitoring characteristics
Table 76. VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-
39
-
kΩ
Q
Ratio on VBAT measurement
-
3
-
-
Error on Q
-10
-
10
%
ADC sampling time when reading the VBAT
12
-
-
µs
Er
(1)
tS_vbat(1)
1. Guaranteed by design.
Table 77. VBAT charging characteristics
Symbol
RBC
Parameter Conditions
Battery
charging
resistor
Min
Typ
Max
VBRS = 0
-
5
-
VBRS = 1
-
1.5
-
DocID027692 Rev 2
Unit
kΩ
157/193
181
Electrical characteristics
6.3.24
STM32L475xx
DFSDM characteristics
Unless otherwise specified, the parameters given in Table 78 for DFSDM are derived from
tests performed under the ambient temperature, fAPB2 frequency and VDD supply voltage
conditions summarized in Table 22: General operating conditions.
•
Output speed is set to OSPEEDRy[1:0] = 10
•
Capacitive load C = 30 pF
•
Measurement points are done at CMOS levels: 0.5 ₓ VDD
Refer to Section 6.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (DFSDM_CKINy, DFSDM_DATINy, DFSDM_CKOUT for DFSDM).
Table 78. DFSDM characteristics(1)
Symbol
Parameter
Conditions
Min
Typ
Max
fDFSDMCLK
DFSDM clock
-
-
-
fSYSCLK
-
-
20
(fDFSDMCLK/4)
MHz
fCKIN
(1/TCKIN)
Input clock
frequency
SPI mode (SITP[1:0] = 01)
Unit
Output clock
frequency
-
-
-
20
MHz
Output clock
DuCyCKOUT frequency
duty cycle
-
45
50
55
%
fCKOUT
Input clock
high and low
time
SPI mode (SITP[1:0] = 01),
External clock mode
(SPICKSEL[1:0] = 0)
TCKIN/2-0.5
TCKIN/2
-
tsu
Data input
setup time
SPI mode (SITP[1:0]=01),
External clock mode
(SPICKSEL[1:0] = 0)
0
-
-
th
Data input
hold time
SPI mode (SITP[1:0]=01),
External clock mode
(SPICKSEL[1:0] = 0)
Manchester
data period
(recovered
clock period)
Manchester mode (SITP[1:0]
= 10 or 11),
Internal clock mode
(SPICKSEL[1:0] ≠ 0)
twh(CKIN)
twl(CKIN)
TManchester
ns
2
-
-
(CKOUT
DIV+1) ₓ
TDFSDMCLK
-
(2 ₓ CKOUTDIV)
ₓ TDFSDMCLK
1. Data based on characterization results, not tested in production.
158/193
DocID027692 Rev 2
STM32L475xx
Electrical characteristics
')6'0B
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63,WLPLQJ63,&.6(/ Figure 16: DFSDM timing diagram
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6.3.25
Timer characteristics
The parameters given in the following tables are guaranteed by design.
Refer to Section 6.3.14: I/O port characteristics for details on the input/output alternate
function characteristics (output compare, input capture, external clock, PWM output).
DocID027692 Rev 2
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181
Electrical characteristics
STM32L475xx
Table 79. TIMx(1) characteristics
Symbol
tres(TIM)
Parameter
Timer resolution time
Conditions
Min
Max
Unit
-
1
-
tTIMxCLK
fTIMxCLK = 80 MHz
12.5
-
ns
0
fTIMxCLK/2
MHz
0
40
MHz
TIMx (except TIM2
and TIM5)
-
16
TIM2 and TIM5
-
32
-
1
65536
tTIMxCLK
fTIMxCLK = 80 MHz
0.0125
819.2
µs
-
-
65536 × 65536
tTIMxCLK
fTIMxCLK = 80 MHz
-
53.68
s
Timer external clock
frequency on CH1 to CH4 f
TIMxCLK = 80 MHz
fEXT
ResTIM
tCOUNTER
tMAX_COUNT
Timer resolution
16-bit counter clock
period
Maximum possible count
with 32-bit counter
bit
1. TIMx, is used as a general term in which x stands for 1,2,3,4,5,6,7,8,15,16 or 17.
Table 80. IWDG min/max timeout period at 32 kHz (LSI)(1)
Prescaler divider
PR[2:0] bits
Min timeout RL[11:0]=
0x000
Max timeout RL[11:0]=
0xFFF
/4
0
0.125
512
/8
1
0.250
1024
/16
2
0.500
2048
/32
3
1.0
4096
/64
4
2.0
8192
/128
5
4.0
16384
/256
6 or 7
8.0
32768
Unit
ms
1. The exact timings still depend on the phasing of the APB interface clock versus the LSI clock so that there
is always a full RC period of uncertainty.
Table 81. WWDG min/max timeout value at 80 MHz (PCLK)
160/193
Prescaler
WDGTB
Min timeout value
Max timeout value
1
0
0.0512
3.2768
2
1
0.1024
6.5536
4
2
0.2048
13.1072
8
3
0.4096
26.2144
DocID027692 Rev 2
Unit
ms
STM32L475xx
6.3.26
Electrical characteristics
Communication interfaces characteristics
I2C interface characteristics
The I2C interface meets the timings requirements of the I2C-bus specification and user
manual rev. 03 for:
•
Standard-mode (Sm): with a bit rate up to 100 kbit/s
•
Fast-mode (Fm): with a bit rate up to 400 kbit/s
•
Fast-mode Plus (Fm+): with a bit rate up to 1 Mbit/s.
The I2C timings requirements are guaranteed by design when the I2C peripheral is properly
configured (refer to RM0395 reference manual).
The SDA and SCL I/O requirements are met with the following restrictions: the SDA and
SCL I/O pins are not “true” open-drain. When configured as open-drain, the PMOS
connected between the I/O pin and VDDIOx is disabled, but is still present. Only FT_f I/O pins
support Fm+ low level output current maximum requirement. Refer to Section 6.3.14: I/O
port characteristics for the I2C I/Os characteristics.
All I2C SDA and SCL I/Os embed an analog filter. Refer to the table below for the analog
filter characteristics:
Table 82. I2C analog filter characteristics(1)
Symbol
Parameter
Min
Max
Unit
tAF
Maximum pulse width of spikes
that are suppressed by the analog
filter
50(2)
260(3)
ns
1. Guaranteed by design.
2. Spikes with widths below tAF(min) are filtered.
3. Spikes with widths above tAF(max) are not filtered
DocID027692 Rev 2
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181
Electrical characteristics
STM32L475xx
SPI characteristics
Unless otherwise specified, the parameters given in Table 83 for SPI are derived from tests
performed under the ambient temperature, fPCLKx frequency and supply voltage conditions
summarized in Table 22: General operating conditions.
•
Output speed is set to OSPEEDRy[1:0] = 11
•
Capacitive load C = 30 pF
•
Measurement points are done at CMOS levels: 0.5 ₓ VDD
Refer to Section 6.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (NSS, SCK, MOSI, MISO for SPI).
Table 83. SPI characteristics(1)
Symbol
Parameter
fSCK
SPI clock frequency
1/tc(SCK)
Conditions
Min
Typ
Max
Master mode receiver/full duplex
2.7 < VDD < 3.6 V
Voltage Range 1
24
Master mode receiver/full duplex
1.71 < VDD < 3.6 V
Voltage Range 1
13
Master mode transmitter
1.71 < VDD < 3.6 V
Voltage Range 1
40
Slave mode receiver
1.71 < VDD < 3.6 V
Voltage Range 1
-
-
Unit
MHz
40
Slave mode transmitter/full duplex
2.7 < VDD < 3.6 V
Voltage Range 1
26(2)
Slave mode transmitter/full duplex
1.71 < VDD < 3.6 V
Voltage Range 1
16(2)
Voltage Range 2
13
tsu(NSS) NSS setup time
Slave mode, SPI prescaler = 2
4ₓTPCLK
-
-
ns
th(NSS)
Slave mode, SPI prescaler = 2
2ₓTPCLK
-
-
ns
Master mode
TPCLK-2
TPCLK
TPCLK+2
ns
Master mode
3.5
-
-
Slave mode
3
-
-
Master mode
6.5
-
-
Slave mode
3
-
-
ta(SO)
Data output access time Slave mode
9
-
36
ns
tdis(SO)
Data output disable time Slave mode
9
-
16
ns
NSS hold time
tw(SCKH)
SCK high and low time
tw(SCKL)
tsu(MI)
tsu(SI)
th(MI)
th(SI)
162/193
Data input setup time
Data input hold time
DocID027692 Rev 2
ns
ns
STM32L475xx
Electrical characteristics
Table 83. SPI characteristics(1) (continued)
Symbol
tv(SO)
Parameter
Data output valid time
tv(MO)
th(SO)
th(MO)
Conditions
Data output hold time
Min
Typ
Max
Slave mode 2.7 < VDD < 3.6 V
Voltage Range 1
-
12.5
19
Slave mode 1.71 < VDD < 3.6 V
Voltage Range 1
-
12.5
30
Slave mode 1.71 < VDD < 3.6 V
Voltage Range 2
-
12.5
33
Master mode
-
2.5
12.5
Slave mode
9
-
-
Master mode
0
-
-
Unit
ns
ns
1. Guaranteed by characterization results.
2. Maximum frequency in Slave transmitter mode is determined by the sum of tv(SO) and tsu(MI) which has to fit into SCK low or
high phase preceding the SCK sampling edge. This value can be achieved when the SPI communicates with a master
having tsu(MI) = 0 while Duty(SCK) = 50 %.
Figure 25. SPI timing diagram - slave mode and CPHA = 0
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DLF
DocID027692 Rev 2
163/193
181
Electrical characteristics
STM32L475xx
Figure 26. SPI timing diagram - slave mode and CPHA = 1
166LQSXW
6&.LQSXW
W68166
&3+$
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1. Measurement points are done at CMOS levels: 0.3 VDD and 0.7 VDD.
Figure 27. SPI timing diagram - master mode
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1. Measurement points are done at CMOS levels: 0.3 VDD and 0.7 VDD.
164/193
DocID027692 Rev 2
STM32L475xx
Electrical characteristics
Quad SPI characteristics
Unless otherwise specified, the parameters given in Table 84 and Table 85 for Quad SPI
are derived from tests performed under the ambient temperature, fAHB frequency and VDD
supply voltage conditions summarized in Table 22: General operating conditions, with the
following configuration:
•
Output speed is set to OSPEEDRy[1:0] = 11
•
Capacitive load C = 15 or 20 pF
•
Measurement points are done at CMOS levels: 0.5 ₓ VDD
Refer to Section 6.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics.
Table 84. Quad SPI characteristics in SDR mode(1)
Symbol
FCK
1/t(CK)
tw(CKH)
tw(CKL)
Parameter
Quad SPI clock frequency
Quad SPI clock high and
low time
ts(IN)
Data input setup time
th(IN)
Data input hold time
tv(OUT)
Data output valid time
th(OUT)
Data output hold time
Conditions
Min
Typ
Max
1.71 < VDD< 3.6 V, CLOAD = 20 pF
Voltage Range 1
-
-
40
1.71 < VDD< 3.6 V, CLOAD = 15 pF
Voltage Range 1
-
-
48
2.7 < VDD< 3.6 V, CLOAD = 15 pF
Voltage Range 1
-
-
60
1.71 < VDD < 3.6 V CLOAD = 20 pF
Voltage Range 2
-
-
26
t(CK)/2-2
-
t(CK)/2
t(CK)/2
-
t(CK)/2+2
Voltage Range 1
4
-
-
Voltage Range 2
3.5
-
-
Voltage Range 1
5.5
-
-
Voltage Range 2
6.5
-
-
Voltage Range 1
-
2.5
5
Voltage Range 2
-
3
5
Voltage Range 1
1.5
-
-
Voltage Range 2
2
-
-
fAHBCLK= 48 MHz, presc=0
Unit
MHz
ns
1. Guaranteed by characterization results.
DocID027692 Rev 2
165/193
181
Electrical characteristics
STM32L475xx
Table 85. QUADSPI characteristics in DDR mode(1)
Symbol
Parameter
FCK
1/t(CK)
Quad SPI clock
frequency
tw(CKH)
Quad SPI clock high
and low time
tw(CKL)
tsf(IN);tsr(IN)
Data input setup time
thf(IN); thr(IN)
Data input hold time
tvf(OUT);tvr(OUT)
Data output valid time
thf(OUT); thr(OUT)
Data output hold time
Conditions
Min
Typ
Max
1.71 < VDD < 3.6 V, CLOAD = 20 pF
Voltage Range 1
-
-
40
2 < VDD < 3.6 V, CLOAD = 20 pF
Voltage Range 1
-
-
48
1.71 < VDD < 3.6 V, CLOAD = 15 pF
Voltage Range 1
-
-
48
1.71 < VDD < 3.6 V CLOAD = 20 pF
Voltage Range 2
-
-
26
t(CK)/2-2
-
t(CK)/2
t(CK)/2
-
t(CK)/2+2
3.5
-
-
6.5
-
-
11
12
15
19
Unit
MHz
fAHBCLK = 48 MHz, presc=0
Voltage Range 1 and 2
Voltage Range 1
-
Voltage Range 2
Voltage Range 1
6
-
Voltage Range 2
8
-
ns
-
1. Guaranteed by characterization results.
Figure 28. Quad SPI timing diagram - SDR mode
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Figure 29. Quad SPI timing diagram - DDR mode
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06Y9
166/193
DocID027692 Rev 2
STM32L475xx
Electrical characteristics
SAI characteristics
Unless otherwise specified, the parameters given in Table 86 for SAI are derived
from tests performed under the ambient temperature, fPCLKx frequency and VDD
supply voltage conditions summarized inTable 22: General operating conditions, with
the following configuration:
•
Output speed is set to OSPEEDRy[1:0] = 10
•
Capacitive load C = 30 pF
•
Measurement points are done at CMOS levels: 0.5 ₓ VDD
Refer to Section 6.3.14: I/O port characteristics for more details on the input/output
alternate function characteristics (CK,SD,FS).
Table 86. SAI characteristics(1)
Symbol
Parameter
Conditions
Min
Max
Unit
fMCLK
SAI Main clock output
-
-
50
MHz
Master transmitter
2.7 ≤ VDD ≤ 3.6
Voltage Range 1
-
18.5
Master transmitter
1.71 ≤ VDD ≤ 3.6
Voltage Range 1
-
12.5
Master receiver
Voltage Range 1
-
25
SAI clock frequency(2) Slave transmitter
2.7 ≤ VDD ≤ 3.6
Voltage Range 1
-
22.5
Slave transmitter
1.71 ≤ VDD ≤ 3.6
Voltage Range 1
-
14.5
Slave receiver
Voltage Range 1
-
25
Voltage Range 2
-
12.5
Master mode
2.7 ≤ VDD ≤ 3.6
-
22
Master mode
1.71 ≤ VDD ≤ 3.6
-
40
fCK
tv(FS)
FS valid time
MHz
ns
th(FS)
FS hold time
Master mode
10
-
ns
tsu(FS)
FS setup time
Slave mode
1
-
ns
th(FS)
FS hold time
Slave mode
2
-
ns
Master receiver
2.5
-
Slave receiver
3
-
Master receiver
8
-
Slave receiver
4
-
tsu(SD_A_MR)
tsu(SD_B_SR)
th(SD_A_MR)
th(SD_B_SR)
Data input setup time
Data input hold time
DocID027692 Rev 2
ns
ns
167/193
181
Electrical characteristics
STM32L475xx
Table 86. SAI characteristics(1) (continued)
Symbol
tv(SD_B_ST)
th(SD_B_ST)
tv(SD_A_MT)
th(SD_A_MT)
Parameter
Conditions
Data output valid time
Data output hold time
Data output valid time
Data output hold time
Min
Max
Slave transmitter (after enable edge)
2.7 ≤ VDD ≤ 3.6
-
22
Slave transmitter (after enable edge)
1.71 ≤ VDD ≤ 3.6
-
34
Slave transmitter (after enable edge)
10
-
Master transmitter (after enable edge)
2.7 ≤ VDD ≤ 3.6
-
27
Master transmitter (after enable edge)
1.71 ≤ VDD ≤ 3.6
-
40
Master transmitter (after enable edge)
10
-
Unit
ns
ns
ns
ns
1. Guaranteed by characterization results.
2. APB clock frequency must be at least twice SAI clock frequency.
Figure 30. SAI master timing waveforms
F3#+
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TH&3
3!)?&3?8
OUTPUT
TV&3
TH3$?-4
TV3$?-4
3!)?3$?8
TRANSMIT
3LOTN
TSU3$?-2
3!)?3$?8
RECEIVE
3LOTN
TH3$?-2
3LOTN
-36
168/193
DocID027692 Rev 2
STM32L475xx
Electrical characteristics
Figure 31. SAI slave timing waveforms
F3#+
3!)?3#+?8
TW#+(?8
3!)?&3?8
INPUT
TW#+,?8
TH&3
TSU&3
TH3$?34
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3!)?3$?8
TRANSMIT
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RECEIVE
3LOTN
TH3$?32
3LOTN
-36
SDMMC characteristics
Unless otherwise specified, the parameters given in Table 87 for SDIO are derived from
tests performed under the ambient temperature, fPCLKx frequency and VDD supply voltage
conditions summarized in Table 22: General operating conditions, with the following
configuration:
•
Output speed is set to OSPEEDRy[1:0] = 11
•
Capacitive load C = 30 pF
•
Measurement points are done at CMOS levels: 0.5 ₓ VDD
Refer to Section 6.3.14: I/O port characteristics for more details on the input/output
characteristics.
Table 87. SD / MMC dynamic characteristics, VDD=2.7 V to 3.6 V(1)
Symbol
fPP
-
Parameter
Conditions
Min
Typ
Max
Unit
Clock frequency in data transfer mode
-
0
-
50
MHz
SDIO_CK/fPCLK2 frequency ratio
-
-
-
4/3
-
tW(CKL)
Clock low time
fPP = 50 MHz
8
10
-
ns
tW(CKH)
Clock high time
fPP = 50 MHz
8
10
-
ns
CMD, D inputs (referenced to CK) in MMC and SD HS mode
tISU
Input setup time HS
fPP = 50 MHz
2
-
-
ns
tIH
Input hold time HS
fPP = 50 MHz
4.5
-
-
ns
CMD, D outputs (referenced to CK) in MMC and SD HS mode
tOV
Output valid time HS
fPP = 50 MHz
-
12
14
ns
tOH
Output hold time HS
fPP = 50 MHz
9
-
-
ns
CMD, D inputs (referenced to CK) in SD default mode
tISUD
Input setup time SD
fPP = 50 MHz
2
-
-
ns
tIHD
Input hold time SD
fPP = 50 MHz
4.5
-
-
ns
DocID027692 Rev 2
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181
Electrical characteristics
STM32L475xx
Table 87. SD / MMC dynamic characteristics, VDD=2.7 V to 3.6 V(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
CMD, D outputs (referenced to CK) in SD default mode
tOVD
Output valid default time SD
fPP = 50 MHz
-
4.5
5
ns
tOHD
Output hold default time SD
fPP = 50 MHz
0
-
-
ns
1. Guaranteed by characterization results.
Table 88. eMMC dynamic characteristics, VDD = 1.71 V to 1.9 V(1)(2)
Symbol
fPP
-
Parameter
Conditions
Min
Typ
Max
Unit
Clock frequency in data transfer mode
-
0
-
50
MHz
SDIO_CK/fPCLK2 frequency ratio
-
-
-
4/3
-
tW(CKL)
Clock low time
fPP = 50 MHz
8
10
-
ns
tW(CKH)
Clock high time
fPP = 50 MHz
8
10
-
ns
CMD, D inputs (referenced to CK) in eMMC mode
tISU
Input setup time HS
fPP = 50 MHz
0
-
-
ns
tIH
Input hold time HS
fPP = 50 MHz
5
-
-
ns
CMD, D outputs (referenced to CK) in eMMC mode
tOV
Output valid time HS
fPP = 50 MHz
-
13.5
15.5
ns
tOH
Output hold time HS
fPP = 50 MHz
9
-
-
ns
1. Guaranteed by characterization results.
2. CLOAD = 20pF.
Figure 32. SDIO high-speed mode
TF
TR
T#
T7#+(
T7#+,
#+
T/6
T/(
$#-$
OUTPUT
T)35
T)(
$#-$
INPUT
AI
170/193
DocID027692 Rev 2
STM32L475xx
Electrical characteristics
Figure 33. SD default mode
#+
T/6$
T/($
$#-$
OUTPUT
AI
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USB characteristics
The STM32L475xx USB interface is fully compliant with the USB specification version 2.0
and is USB-IF certified (for Full-speed device operation).
Table 89. USB electrical characteristics
Symbol
VDDUSB
Parameter
Conditions
USB transceiver operating voltage
Min
(1)
3.0
Typ
Max
Unit
-
3.6
V
RPUI
Embedded USB_DP pull-up value during idle
900
1250
1600
RPUR
Embedded USB_DP pull-up value during
reception
1400
2300
3200
28
36
44
ZDRV(2)
Output driver impedance(3)
Driving high
and low
Ω
Ω
1. The STM32L475xx USB functionality is ensured down to 2.7 V but not the full USB electrical characteristics
which are degraded in the 2.7-to-3.0 V voltage range.
2. Guaranteed by design.
3. No external termination series resistors are required on USB_DP (D+) and USB_DM (D-); the matching
impedance is already included in the embedded driver.
CAN (controller area network) interface
Refer to Section 6.3.14: I/O port characteristics for more details on the input/output alternate
function characteristics (CAN_TX and CAN_RX).
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6.3.27
Electrical characteristics
FSMC characteristics
Unless otherwise specified, the parameters given in Table 90 to Table 95 for the FMC
interface are derived from tests performed under the ambient temperature, fHCLK frequency
and VDD supply voltage conditions summarized in Table 22, with the following configuration:
•
Output speed is set to OSPEEDRy[1:0] = 11
•
Capacitive load C = 30 pF
•
Measurement points are done at CMOS levels: 0.5VDD
Refer to Section 6.3.14: I/O port characteristics for more details on the input/output
characteristics.
Asynchronous waveforms and timings
Figure 34 and Figure 35 represent asynchronous waveforms and Table 90 through Table 93
provide the corresponding timings. The results shown in these tables are obtained with the
following FMC configuration:
•
AddressSetupTime = 0x1
•
AddressHoldTime = 0x1
•
DataSetupTime = 0x1 (except for asynchronous NWAIT mode, DataSetupTime = 0x5)
•
BusTurnAroundDuration = 0x0
In all timing tables, the THCLK is the HCLK clock period.
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Figure 34. Asynchronous multiplexed PSRAM/NOR read waveforms
TW.%
&-#? .%
TV./%?.%
T H.%?./%
&-#?./%
T W./%
&-#?.7%
TH!?./%
TV!?.%
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T V.!$6?.%
TW.!$6
&-#?.!$6
&-#?.7!)4
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-36
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Electrical characteristics
Table 90. Asynchronous multiplexed PSRAM/NOR read timings(1)(2)
Symbol
tw(NE)
tv(NOE_NE)
tw(NOE)
th(NE_NOE)
tv(A_NE)
Parameter
Min
Max
FMC_NE low time
3THCLK-0.5
3THCLK+2
FMC_NEx low to FMC_NOE low
2THCLK-0.5
2THCLK+0.5
FMC_NOE low time
THCLK+0.5
THCLK+1
FMC_NOE high to FMC_NE high hold time
0
-
FMC_NEx low to FMC_A valid
-
3
0
1
THCLK-0.5
THCLK+1
tv(NADV_NE) FMC_NEx low to FMC_NADV low
tw(NADV)
FMC_NADV low time
th(AD_NADV)
FMC_AD(address) valid hold time after
FMC_NADV high
0
-
th(A_NOE)
Address hold time after FMC_NOE high
THCLK-0.5
-
th(BL_NOE)
FMC_BL time after FMC_NOE high
0
-
FMC_NEx low to FMC_BL valid
-
2
Data to FMC_NEx high setup time
THCLK-2
-
tsu(Data_NOE) Data to FMC_NOE high setup time
THCLK-1
-
Data hold time after FMC_NEx high
0
-
th(Data_NOE) Data hold time after FMC_NOE high
0
-
tv(BL_NE)
tsu(Data_NE)
th(Data_NE)
Unit
ns
1. CL = 30 pF.
2. Guaranteed by characterization results.
Table 91. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings(1)(2)
Symbol
tw(NE)
tw(NOE)
Parameter
Min
Max
FMC_NE low time
8THCLK+2
8THCLK+4
FMC_NWE low time
5THCLK-1
5THCLK+1.5
5THCLK+1.5
-
4THCLK+1
-
tsu(NWAIT_NE)
FMC_NWAIT valid before FMC_NEx high
th(NE_NWAIT)
FMC_NEx hold time after FMC_NWAIT invalid
Unit
ns
1. CL = 30 pF.
2. Guaranteed by characterization results.
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Figure 35. Asynchronous multiplexed PSRAM/NOR write waveforms
TW.%
&-#? .%X
&-#?./%
TV.7%?.%
TW.7%
T H.%?.7%
&-#?.7%
TH!?.7%
TV!?.%
&-#? !;=
!DDRESS
TV",?.%
&-#? .",;=
.",
T V!?.%
&-#? !$;=
TH",?.7%
T V$ATA?.!$6
!DDRESS
TH$ATA?.7%
$ATA
TH!$?.!$6
T V.!$6?.%
TW.!$6
&-#?.!$6
&-#?.7!)4
TH.%?.7!)4
TSU.7!)4?.%
-36
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Electrical characteristics
Table 92. Asynchronous multiplexed PSRAM/NOR write timings(1)(2)
Symbol
Min
Max
FMC_NE low time
4THCLK-0.5
4THCLK+2
FMC_NEx low to FMC_NWE low
THCLK-0.5
THCLK+1
2xTHCLK-1.5
2xTHCLK+1.
5
THCLK-0.5
-
FMC_NEx low to FMC_A valid
-
3
FMC_NEx low to FMC_NADV low
0
1
THCLK-0.5
THCLK+1
FMC_AD(adress) valid hold time after
FMC_NADV high
THCLK-2
-
th(A_NWE)
Address hold time after FMC_NWE high
THCLK-1
-
th(BL_NWE)
FMC_BL hold time after FMC_NWE high
THCLK+0.5
-
-
1.5
-
THCLK +4
THCLK +0.5
-
tw(NE)
tv(NWE_NE)
tw(NWE)
th(NE_NWE)
tv(A_NE)
tv(NADV_NE)
tw(NADV)
th(AD_NADV)
tv(BL_NE)
Parameter
FMC_NWE low time
FMC_NWE high to FMC_NE high hold time
FMC_NADV low time
FMC_NEx low to FMC_BL valid
tv(Data_NADV) FMC_NADV high to Data valid
th(Data_NWE) Data hold time after FMC_NWE high
Unit
ns
1. CL = 30 pF.
2. Guaranteed by characterization results.
Table 93. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings(1)(2)
Symbol
Min
Max
FMC_NE low time
9THCLK-0.5
9THCLK+2
FMC_NWE low time
7THCLK-1.5
7THCLK+1.5
tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high
6THCLK+2
-
th(NE_NWAIT)
4THCLK-3
-
tw(NE)
tw(NWE)
Parameter
FMC_NEx hold time after FMC_NWAIT invalid
Unit
ns
1. CL = 30 pF.
2. Guaranteed by characterization results.
Synchronous waveforms and timings
Figure 36 and Figure 37 represent synchronous waveforms and Table 94 and
Table 95 provide the corresponding timings. The results shown in these tables are
obtained with the following FMC configuration:
•
BurstAccessMode = FMC_BurstAccessMode_Enable
•
MemoryType = FMC_MemoryType_CRAM
•
WriteBurst = FMC_WriteBurst_Enable
•
CLKDivision = 1
•
DataLatency = 1 for NOR Flash; DataLatency = 0 for PSRAM
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In all timing tables, the THCLK is the HCLK clock period.
Figure 36. Synchronous multiplexed NOR/PSRAM read timings
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-36
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Electrical characteristics
Table 94. Synchronous multiplexed NOR/PSRAM read timings(1)(2)
Symbol
Min
Max
2THCLK-1
-
-
2
THCLK+0.5
-
td(CLKL-NADVL) FMC_CLK low to FMC_NADV low
-
2.5
td(CLKL-NADVH) FMC_CLK low to FMC_NADV high
1
-
-
3.5
THCLK
-
-
1.5
THCLK+1
-
tw(CLK)
Parameter
FMC_CLK period
td(CLKL-NExL)
FMC_CLK low to FMC_NEx low (x=0..2)
td(CLKH_NExH)
FMC_CLK high to FMC_NEx high (x= 0…2)
td(CLKL-AV)
FMC_CLK low to FMC_Ax valid (x=16…25)
td(CLKH-AIV)
FMC_CLK high to FMC_Ax invalid (x=16…25)
td(CLKL-NOEL)
FMC_CLK low to FMC_NOE low
td(CLKH-NOEH)
FMC_CLK high to FMC_NOE high
td(CLKL-ADV)
FMC_CLK low to FMC_AD[15:0] valid
-
4
td(CLKL-ADIV)
FMC_CLK low to FMC_AD[15:0] invalid
0
-
tsu(ADV-CLKH)
FMC_A/D[15:0] valid data before FMC_CLK high
0
-
th(CLKH-ADV)
FMC_A/D[15:0] valid data after FMC_CLK high
2.5
-
tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high
0
-
th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high
4
-
Unit
ns
1. CL = 30 pF.
2. Guaranteed by characterization results.
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Electrical characteristics
STM32L475xx
Figure 37. Synchronous multiplexed PSRAM write timings
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Electrical characteristics
Table 95. Synchronous multiplexed PSRAM write timings(1)(2)
Symbol
tw(CLK)
Parameter
FMC_CLK period
Min
Max
2THCLK-1
-
-
2
THCLK+0.5
-
td(CLKL-NExL)
FMC_CLK low to FMC_NEx low (x=0..2)
td(CLKH-NExH)
FMC_CLK high to FMC_NEx high (x= 0…2)
td(CLKL-NADVL)
FMC_CLK low to FMC_NADV low
-
2.5
td(CLKL-NADVH)
FMC_CLK low to FMC_NADV high
1
-
td(CLKL-AV)
FMC_CLK low to FMC_Ax valid (x=16…25)
-
3.5
td(CLKH-AIV)
FMC_CLK high to FMC_Ax invalid (x=16…25)
THCLK
-
-
2
THCLK+1
-
td(CLKL-NWEL)
FMC_CLK low to FMC_NWE low
td(CLKH-NWEH)
FMC_CLK high to FMC_NWE high
td(CLKL-ADV)
FMC_CLK low to FMC_AD[15:0] valid
-
4
td(CLKL-ADIV)
FMC_CLK low to FMC_AD[15:0] invalid
0
-
td(CLKL-DATA)
FMC_A/D[15:0] valid data after FMC_CLK low
-
5.5
td(CLKL-NBLL)
FMC_CLK low to FMC_NBL low
-
2.5
td(CLKH-NBLH)
FMC_CLK high to FMC_NBL high
THCLK+1
-
0
-
4
-
tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high
th(CLKH-NWAIT)
FMC_NWAIT valid after FMC_CLK high
Unit
ns
1. CL = 30 pF.
2. Guaranteed by characterization results.
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Package information
7
STM32L475xx
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
7.1
LQFP100 package information
Figure 38. LQFP100 - 100-pin, 14 x 14 mm low-profile quad flat package outline
MM
C
!
!
!
3%!4).'0,!.%
#
'!5'%0,!.%
$
,
$
!
+
CCC #
,
$
0).
)$%.4)&)#!4)/.
E
1. Drawing is not to scale.
182/193
%
%
%
B
DocID027692 Rev 2
,?-%?6
STM32L475xx
Package information
Table 96. LQPF100 - 100-pin, 14 x 14 mm low-profile quad flat package
mechanical data
inches(1)
millimeters
Symbol
Min
Typ
Max
Min
Typ
Max
A
-
-
1.600
-
-
0.0630
A1
0.050
-
0.150
0.0020
-
0.0059
A2
1.350
1.400
1.450
0.0531
0.0551
0.0571
b
0.170
0.220
0.270
0.0067
0.0087
0.0106
c
0.090
-
0.200
0.0035
-
0.0079
D
15.800
16.000
16.200
0.6220
0.6299
0.6378
D1
13.800
14.000
14.200
0.5433
0.5512
0.5591
D3
-
12.000
-
-
0.4724
-
E
15.800
16.000
16.200
0.6220
0.6299
0.6378
E1
13.800
14.000
14.200
0.5433
0.5512
0.5591
E3
-
12.000
-
-
0.4724
-
e
-
0.500
-
-
0.0197
-
L
0.450
0.600
0.750
0.0177
0.0236
0.0295
L1
-
1.000
-
-
0.0394
-
k
0.0°
3.5°
7.0°
0.0°
3.5°
7.0°
ccc
-
-
0.080
-
-
0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.
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Package information
STM32L475xx
Figure 39. LQFP100 - 100-pin, 14 x 14 mm low-profile quad flat
recommended footprint
AIC
1. Dimensions are expressed in millimeters.
Device marking
The following figure gives an example of topside marking orientation versus pin 1 identifier
location.
Figure 40. LQFP100 marking (package top view)
3URGXFWLGHQWLILFDWLRQ
670/
2SWLRQDOJDWHPDUN
9*7
5HYLVLRQFRGH
'DWHFRGH
< ::
3LQ
LQGHQWLILHU
06Y9
1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering
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Package information
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.
LQFP64 package information
Figure 41. LQFP64 - 64-pin, 10 x 10 mm low-profile quad flat package outline
PP
*$8*(3/$1(
F
$
$
6($7,1*3/$1(
&
$
$
FFF &
'
'
'
.
/
/
3,1
,'(17,),&$7,21
(
(
E
(
7.2
H
:B0(B9
1. Drawing is not to scale.
Table 97. LQFP64 - 64-pin, 10 x 10 mm low-profile quad flat
package mechanical data
inches(1)
millimeters
Symbol
Min
Typ
Max
Min
Typ
Max
A
-
-
1.600
-
-
0.0630
A1
0.050
-
0.150
0.0020
-
0.0059
A2
1.350
1.400
1.450
0.0531
0.0551
0.0571
b
0.170
0.220
0.270
0.0067
0.0087
0.0106
c
0.090
-
0.200
0.0035
-
0.0079
D
-
12.000
-
-
0.4724
-
D1
-
10.000
-
-
0.3937
-
D3
-
7.500
-
-
0.2953
-
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Package information
STM32L475xx
Table 97. LQFP64 - 64-pin, 10 x 10 mm low-profile quad flat
package mechanical data (continued)
inches(1)
millimeters
Symbol
Min
Typ
Max
Min
Typ
Max
E
-
12.000
-
-
0.4724
-
E1
-
10.000
-
-
0.3937
-
E3
-
7.500
-
-
0.2953
-
e
-
0.500
-
-
0.0197
-
K
0°
3.5°
7°
0°
3.5°
7°
L
0.450
0.600
0.750
0.0177
0.0236
0.0295
L1
-
1.000
-
-
0.0394
-
ccc
-
-
0.080
-
-
0.0031
1. Values in inches are converted from mm and rounded to 4 decimal digits.
Figure 42. LQFP64 - 64-pin, 10 x 10 mm low-profile quad flat package
recommended footprint
AIC
1. Dimensions are expressed in millimeters.
Device marking
The following figure gives an example of topside marking orientation versus pin 1 identifier
location.
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Package information
Figure 43. LQFP64 marking (package top view)
5HYLVLRQFRGH
3URGXFWLGHQWLILFDWLRQ
670/
5*7
< ::
'DWHFRGH
3LQLGHQWLILHU
06Y9
1. Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet
qualified and therefore not yet ready to be used in production and any consequences deriving from such
usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering
samples in production. ST Quality has to be contacted prior to any decision to use these Engineering
samples to run qualification activity.
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Package information
7.3
STM32L475xx
Thermal characteristics
The maximum chip junction temperature (TJmax) must never exceed the values given in
Table 22: General operating conditions.
The maximum chip-junction temperature, TJ max, in degrees Celsius, may be calculated
using the following equation:
TJ max = TA max + (PD max x ΘJA)
Where:
•
TA max is the maximum ambient temperature in °C,
•
ΘJA is the package junction-to-ambient thermal resistance, in °C/W,
•
PD max is the sum of PINT max and PI/O max (PD max = PINT max + PI/Omax),
•
PINT max is the product of IDD and VDD, expressed in Watts. This is the maximum chip
internal power.
PI/O max represents the maximum power dissipation on output pins where:
PI/O max = Σ (VOL × IOL) + Σ ((VDDIOx – VOH) × IOH),
taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high level in the
application.
Table 98. Package thermal characteristics
Symbol
ΘJA
7.3.1
Parameter
Value
Thermal resistance junction-ambient
LQFP64 - 10 × 10 mm / 0.5 mm pitch
45
Thermal resistance junction-ambient
LQFP100 - 14 × 14mm
42
Unit
°C/W
Reference document
JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural
Convection (Still Air). Available from www.jedec.org
7.3.2
Selecting the product temperature range
When ordering the microcontroller, the temperature range is specified in the ordering
information scheme shown in Section 8: Part numbering.
Each temperature range suffix corresponds to a specific guaranteed ambient temperature at
maximum dissipation and, to a specific maximum junction temperature.
As applications do not commonly use the STM32L475xx at maximum dissipation, it is useful
to calculate the exact power consumption and junction temperature to determine which
temperature range will be best suited to the application.
The following examples show how to calculate the temperature range needed for a given
application.
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Package information
Example 1: High-performance application
Assuming the following application conditions:
Maximum ambient temperature TAmax = 82 °C (measured according to JESD51-2),
IDDmax = 50 mA, VDD = 3.5 V, maximum 20 I/Os used at the same time in output at low
level with IOL = 8 mA, VOL= 0.4 V and maximum 8 I/Os used at the same time in output
at low level with IOL = 20 mA, VOL= 1.3 V
PINTmax = 50 mA × 3.5 V= 175 mW
PIOmax = 20 × 8 mA × 0.4 V + 8 × 20 mA × 1.3 V = 272 mW
This gives: PINTmax = 175 mW and PIOmax = 272 mW:
PDmax = 175 + 272 = 447 mW
Using the values obtained in Table 98 TJmax is calculated as follows:
–
For LQFP64, 45 °C/W
TJmax = 82 °C + (45 °C/W × 447 mW) = 82 °C + 20.115 °C = 102.115 °C
This is within the range of the suffix 6 version parts (–40 < TJ < 105 °C) see Section 8: Part
numbering.
In this case, parts must be ordered at least with the temperature range suffix 6 (see Part
numbering).
Note:
With this given PDmax we can find the TAmax allowed for a given device temperature range
(order code suffix 6 or 7).
Suffix 6: TAmax = TJmax - (45°C/W × 447 mW) = 105-20.115 = 84.885 °C
Suffix 7: TAmax = TJmax - (45°C/W × 447 mW) = 125-20.115 = 104.885 °C
Example 2: High-temperature application
Using the same rules, it is possible to address applications that run at high ambient
temperatures with a low dissipation, as long as junction temperature TJ remains within the
specified range.
Assuming the following application conditions:
Maximum ambient temperature TAmax = 100 °C (measured according to JESD51-2),
IDDmax = 20 mA, VDD = 3.5 V, maximum 20 I/Os used at the same time in output at low
level with IOL = 8 mA, VOL= 0.4 V
PINTmax = 20 mA × 3.5 V= 70 mW
PIOmax = 20 × 8 mA × 0.4 V = 64 mW
This gives: PINTmax = 70 mW and PIOmax = 64 mW:
PDmax = 70 + 64 = 134 mW
Thus: PDmax = 134 mW
Using the values obtained in Table 98 TJmax is calculated as follows:
–
For LQFP64, 45 °C/W
TJmax = 100 °C + (45 °C/W × 134 mW) = 100 °C + 6.03 °C = 106.03 °C
This is above the range of the suffix 6 version parts (–40 < TJ < 105 °C).
In this case, parts must be ordered at least with the temperature range suffix 7 (see
Section 8: Part numbering) unless we reduce the power dissipation in order to be able to
use suffix 6 parts.
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Package information
STM32L475xx
Refer to Figure 44 to select the required temperature range (suffix 6 or 7) according to your
ambient temperature or power requirements.
Figure 44. LQFP64 PD max vs. TA
3'P:
6XIIL[
6XIIL[
7$ƒ&
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STM32L475xx
8
Part numbering
Part numbering
Table 99. STM32L475xx ordering information scheme
Example:
STM32
L
475
R
G
T
6
TR
Device family
STM32 = ARM® based 32-bit microcontroller
Product type
L = ultra-low-power
Device subfamily
475: STM32L475xx
Pin count
R = 64 pins
V = 100 pins
Flash memory size
C = 256 KB of Flash memory
E = 512 KB of Flash memory
G = 1 MB of Flash memory
Package
T = LQFP ECOPACK®2
Temperature range
6 = Industrial temperature range, -40 to 85 °C (105 °C junction)
7 = Industrial temperature range, -40 to 105 °C (125 °C junction)
3 = Industrial temperature range, -40 to 125 °C (130 °C junction)
Packing
TR = tape and reel
xxx = programmed parts
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Revision history
9
STM32L475xx
Revision history
Table 100. Document revision history
Date
Revision
05-Feb-2016
1
Initial release.
2
Removed NAND from supported memories on cover
page.
Added ADC 3 impacting:
Cover page
Section 2: Description.
Table 2: STM32L475xx family device features and
peripheral counts.
Table 5: Functionalities depending on the working
mode.
Section 3.15.1: Temperature sensor.
Section 3.15.3: VBAT battery voltage monitoring.
Table 15: STM32L475xx pin definitions.
Section 2: Description.
Updated Section 3.26: Universal
synchronous/asynchronous receiver transmitter
(USART).
Updated Section 3.27: Low-power universal
asynchronous receiver transmitter (LPUART).
Added Table 43: Wakeup time using USART/LPUART.
Updated Table 54: EMS characteristics.
Updated Table 55: EMI characteristics.
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