BCR2AS-14A Datasheet

BCR2AS-14A Datasheet
Preliminary Datasheet
BCR2AS-14A
R07DS0257EJ0100
Rev.1.00
Feb 28, 2011
Triac
Low Power Use
Features
 Non-Insulated Type
 Planar Passivation Type
 IT (RMS) : 2 A
 VDRM : 700 V
 IFGTI, IRGTI, IRGT : 10 mA
Outline
RENESAS Package code: PRSS0004ZG-A
(Package name : MP-3A)
4
2, 4
12
3
3
1.
2.
3.
4.
T1 Terminal
T2 Terminal
Gate Terminal
T2 Terminal
1
Applications
Small motor control, heater control, and other general purpose AC power control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Parameter
Voltage class
14
700
840
Symbol
VDRM
VDSM
Unit
V
V
Symbol
Ratings
Unit
RMS on-state current
IT (RMS)
2
A
Commercial frequency, sine full wave
360conduction
Surge on-state current
ITSM
9
A
50Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t
0.41
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
1
0.1
6
1
– 40 to +125
– 40 to +125
0.26
W
W
V
A
C
C
g
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Conditions
Value corresponding to 1 cycle of half
wave 50Hz, surge on-state current
Typical value
Notes: 1. Gate open.
R07DS0257EJ0100 Rev.1.00
Feb 28, 2011
Page 1 of 6
BCR2AS-14A
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
1.0
2.1
Unit
mA
V
Test conditions
Tj = 125C, VDRM applied
Tc = 25C, ITM = 3A,
instantaneous measurement
Gate trigger voltageNote2



VFGT
VRGT
VRGT
—
—
—
—
—
—
2.0
2.0
2.0
V
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
Gate trigger curentNote2



IFGT
IRGT
IRGT
—
—
—
—
—
—
10
10
10
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330 
VGD
Rth (j-c)
0.2
—
—
—
—
4.0
V
C/W
Tj = 125C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
0.5
—
—
V/s
Tj = 125C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutation voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T2 tab.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = –1.0 A/ms
3. Peak off-state voltage
VD = 400 V
R07DS0257EJ0100 Rev.1.00
Feb 28, 2011
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 6
BCR2AS-14A
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
102
10
Surge On-State Current (A)
101
100
1.0
1.5
3.0
3.5
2
0
100
4.0
101
102
Gate Trigger Current vs.
Junction Temperature
VGM = 6V
PGM = 1W
PG(AV) =
0.1W
IGM =
0.5A
100
IFGT I,
IRGT I, IRGT III
VGD = 0.2V
101
102
103
103
Typical Example
102
101
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
Typical Example
102
–40
4
Gate Characteristics
VGT = 2V
101
6
Conduction Time (Cycles at 60Hz)
10−1
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
2.5
8
On-State Voltage (V)
101
Gate Voltage (V)
2.0
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
10−1
0.5
0
40
80
120
Junction Temperature (°C)
R07DS0257EJ0100 Rev.1.00
Feb 28, 2011
160
Transient Thermal Impedance (°C/W)
On-State Current (A)
Tj = 25°C
5
4
3
2
1
0
10−1
100
101
102
Conduction Time (Cycles at 60Hz)
Page 3 of 6
BCR2AS-14A
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
160
3.5
140
3.0
2.5
2.0
1.5
1.0
0.5
1.0
10
2.0
0
0.5
1.0
1.5
2.0
2.5
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
5
4
3
0
40
80
120
160
10
2
10
1
–40
0
40
80
120
160
Latching Current vs.
Junction Temperature
Breakover Voltage vs.
Junction Temperature
T2+, G–
Typical Example
0
T2+, G+
Typical Example T –, G–
2
Typical Example
–40
Typical Example
Junction Temperature (°C)
1
−1
103
Junction Temperature (°C)
Distribution
10
40
RMS On-State Current (A)
2
10
60
2.5
2
10
80
RMS On-State Current (A)
10
–40
10
Latching Current (mA)
1.5
Typical Example
10
100
0
0
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
10
120
20
0.5
0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Case Temperature (°C)
4.0
0
40
80
120
Junction Temperature (°C)
R07DS0257EJ0100 Rev.1.00
Feb 28, 2011
160
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
On-State Power Dissipation (W)
Maximum On-State Power Dissipation
160
Typical Example
140
120
100
80
60
40
20
0
–40
0
40
80
120
160
Junction Temperature (°C)
Page 4 of 6
Preliminary
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Commutation Characteristics (Tj=125°C)
101
160
Typical Example
Tj = 125°C
140
120
100
80
60
I Quadrant
III Quadrant
40
20
0
100
101
102
103
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
BCR2AS-14A
III Quadrant
100
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
10
I Quadrant
Minimum
Characteristics
Value
10−1
10−1
Rate of Rise of Off-State Voltage (V/μs)
Gate Trigger Current vs.
Gate Current Pulse Width
Conditions
VD = 200V
IT = 1A
τ = 500μs
Tj = 125°C
Typical Example
100
101
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Characteristics Test Circuits
3
6
6
Typical Example
IRGT III
A
6V
V
102
A
6V
RG
Test Procedure I
RG
V
Test Procedure II
IFGT I
6
IRGT I
A
6V
101 0
10
101
Gate Current Pulse Width (μs)
R07DS0257EJ0100 Rev.1.00
Feb 28, 2011
102
V
RG
Test Procedure III
Page 5 of 6
BCR2AS-14A
Preliminary
Package Dimensions
Previous Code
TMP3
0.76 ± 0.2
Unit: mm
2.3
0.5 ± 0.2
0.1 ± 0.1
2.5Min
1Max
6.1 ± 0.2
6.6
5.3 ± 0.2
MASS[Typ.]
0.32g
1.4 ± 0.2
RENESAS Code
PRSS0004ZG-A
1 ± 0.2
JEITA Package Code
SC-63
10.4Max
Package Name
MP-3A
0.76
0.5 ± 0.2
1
2.3
2.3 ± 0.2
Ordering Information
Orderable Part Number
BCR2AS-14A#B00
BCR2AS-14A-T13#B00
Packing
Tube
Embossed Tape
Quantity
75 pcs.
3000 pcs.
Remark

Taping direction “T1”
Note : Please confirm the specification about the shipping in detail.
R07DS0257EJ0100 Rev.1.00
Feb 28, 2011
Page 6 of 6
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