datasheet for PSB 162/18 by Powersem
Single Phase
Rectifier Bridges
PSB 162
IdAV
VRRM
= 122 A
= 800-1800 V
Preliminary Data Sheet
VRSM
V
800
1200
1400
1600
1800
VRRM
V
800
1200
1400
1600
1800
Type
~
PSB 162/08
PSB 162/12
PSB 162/14
PSB 162/16
PSB 162/18
~
Symbol
Test Conditions
IdAV
IFSM
TC = 100°C, module
TVJ = 45°C
t = 10 ms (50 Hz), sine
VR = 0
t = 8.3 ms (60 Hz), sine
122
1800
1950
A
A
A
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1600
1800
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
16200
16200
A2 s
A2 s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
12800
13400
A2 s
A2 s
-40 ... + 150
150
-40 ... + 125
°C
°C
°C
2500
3000
V∼
V∼
5
5
270
Nm
Nm
g
∫ i2 dt
TVJ
TVJM
Tstg
VISOL
Md
Weight
50/60 HZ, RMS
IISOL ≤ 1 mA
Maximum Ratings
t = 1 min
t=1s
Mounting torque
Terminal connection torque
typ.
(M6)
(M6)
Features
• Package with screw terminals
• Isolation voltage 3000 V∼
• Planar glasspassivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 148688
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
Package, style and outline
Dimensions in mm (1mm = 0.0394“)
Symbol
Test Conditions
Characteristic Value
IR
VR = VRRM
VR = VRRM
≤
≤
0.3
5
mA
mA
VF
VTO
rT
RthJC
IF = 150 A
TVJ = 25°C
For power-loss calculations only
TVJ = TVJM
≤
1.65
0.8
3
V
V
mΩ
per diode; DC current
per module
0.65
0.16
K/W
K/W
RthJK
per diode; DC current
per module
0.83
0.21
K/W
K/W
dS
dA
a
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
10
9.4
50
mm
mm
m/s2
TVJ = 25°C
TVJ = TVJM
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
 2005 POWERSEM reserves the right to change limits, test conditions and dimensions
PSB 162
IF(OV)
-----IFSM
200
5
10
2
As
IFSM (A)
[A]
TVJ=45°C
TVJ=150°C
1800
1.6
1600
150
1.4
10
1.2
100
4
TVJ=45°C
TVJ=150°C
1
0 VRRM
0.8
50
IF
0
1/2 VRRM
Tvj = 150°C
0.5
0.6
1
1.5
VF [V]
10
0.4
2
0
1
10
Fig. 1 Forward current versus
voltage drop per diode
400
[W]
350
1 VRRM
Tvj = 25°C
10
t[ms]
2
10
2
10
70
= RTHCA [K/W]
0.18
4
t [ms]
150
80
[A]
90
95
250
100
0.31
10
DC
sin.180°
rec.120°
rec.60°
rec.30°
85
300
6
Fig. 3 ∫i2dt versus time
(1-10ms) per diode (or thyristor)
TC
75
0.12 0.05
1
3
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
PSB 162
3
100
105
110
200
115
0.56
150
100
50
PVTOT
0
120
130
1.3
135
140
I dAV
145
0
°C
150
25
IFAVM
125 0
[A]
75
50
125
DC
sin.180°
rec.120°
rec.60°
rec.30°
Tamb
50
100
[K]
150
Fig. 4 Power dissipation versus direct output current and ambient
temperature
1
K/W
50
100
150
200
T C(°C)
Fig.5 Maximum forward current
at case temperature
Z thJK
0.8
Z thJC
0.6
0.4
0.2
Z th
0.01
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
 2005 POWERSEM reserves the right to change limits, test conditions and dimensions
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