TIP140/141/142 TIP145/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

TIP140/141/142 TIP145/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
TIP140/141/142
TIP145/146/147
®
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■
■
■
■
TIP141, TIP142, TIP145 AND TIP147 ARE
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
MONOLITHIC DARLINGTON
CONFIGURATION
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
3
2
APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
1
TO-218
DESCRIPTION
The TIP140, TIP141 and TIP142 are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration, mounted in
TO-218 plastic package. They are intented for
use in power linear and switching applications.
The complementary PNP types are TIP145,
TIP146 and TIP147 respectively.
INTERNAL SCHEMATIC DIAGRAM
R2 Typ. = 150 Ω
R1 Typ. = 5 KΩ
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
TIP140
TIP141
TIP142
PNP
TIP145
TIP146
TIP147
V CBO
Collector-Base Voltage (I E = 0)
60
80
100
V
V CEO
Collector-Emitter Voltage (I B = 0)
60
80
100
V
V EBO
Emitter-Base Voltage (I C = 0)
IC
I CM
IB
P tot
T stg
Tj
5
V
Collector Current
10
A
Collector Peak Current
20
A
Base Current
0.5
A
Total Dissipation at T case ≤ 25 o C
Storage Temperature
125
W
Max. Operating Junction Temperature
-65 to 150
o
C
150
o
C
For PNP types voltage and current values are negative.
March 2000
1/4
TIP140 / TIP141 / TIP142 / TIP145 / TIP146 / TIP147
THERMAL DATA
R thj-case
Thermal Resistance Junction-case
Max
o
1
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
I CBO
Collector Cut-off
Current (I E = 0)
for TIP140/145
for TIP141/146
for TIP142/147
V CB = 60 V
V CB = 80 V
V CB = 100 V
1
1
1
mA
mA
mA
I CEO
Collector Cut-off
Current (I B = 0)
for TIP140/145
for TIP141/146
for TIP142/147
V CE = 30 V
V CE = 40 V
V CE = 50 V
2
2
2
mA
mA
mA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
2
mA
VCEO(sus) * Collector-Emitter
Sustaining Voltage
(I B = 0)
I C = 30 mA
for TIP140/145
for TIP141/146
for TIP142/147
Collector-Emitter
Saturation Voltage
IC = 5 A
I C = 10 A
I B = 10 mA
I B = 40 mA
V BE(on) *
Base-Emitter Voltage
I C = 10 A
V CE = 4 V
DC Current Gain
IC = 5 A
I C = 10 A
V CE = 4 V
V CE = 4 V
RESISTIVE LOAD
Turn-on Time
Turn-off Time
I C = 10 A
I B2 = -40 mA
I B1 = 40 mA
RL = 3 Ω
h FE *
t on
t off
For PNP types voltage and current values are negative.
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
V
V
V
60
80
100
V CE(sat) *
2/4
Min.
2
3
V
V
3
V
1000
500
0.9
4
µs
µs
TIP140 / TIP141 / TIP142 / TIP145 / TIP146 / TIP147
TO-218 (SOT-93) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.7
4.9
0.185
0.193
C
1.17
1.37
0.046
0.054
D
2.5
0.098
E
0.5
0.78
0.019
0.030
F
1.1
1.3
0.043
0.051
G
10.8
11.1
0.425
0.437
H
14.7
15.2
0.578
0.598
L2
–
16.2
–
0.637
L3
18
L5
0.708
3.95
4.15
L6
0.155
31
0.163
1.220
–
12.2
–
0.480
Ø
4
4.1
0.157
0.161
D
C
A
E
R
L6
L5
H
G
L3
L2
F
¯
R
1 2 3
P025A
3/4
TIP140 / TIP141 / TIP142 / TIP145 / TIP146 / TIP147
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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