1MBI2400VD-120P

1MBI2400VD-120P

IGBT MODULE (V series)

2400V / 1200A / 1 in one package

http://www.fujielectric.com/products/semiconductor/

IGBT Modules

Features

High speed switching

Voltage drive

Low Inductance module structure

Applications

Inverter for Motor Drive

AC and DC Servo Drive Amplifier

Uninterruptible Power Supply

Industrial machines, such as Welding machines

Maximum Ratings and Characteristics

Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)

Items

Collector-Emitter voltage

Gate-Emitter voltage

Symbols

V

CES

V

GES

Conditions

Collector current

Collector power dissipation

Junction temperature

Operating junction temperature

(under switching conditions)

Screw torque *2

I

P

T

T c

I cp

-I c

-I c pulse j

C jop

Storage temperature T stg

Isolation voltage Between terminal and copper base *1 V iso

Mounting

Main Terminals

Sense Terminals

Continuous

1ms

1ms

1 device

AC : 1min.

M6

M8

M4

T

C

=25°C

T

C

=100°C

T

C

=100°C

(*1) All terminals should be connected together when isolation test will be done.

(*2) Recommendable Value :Mounting 4.25~5.75 Nm (M6) , Main Terminals 8~10 Nm (M8) , Sense Terminals 1.7~2.5 Nm (M4)

Maximum ratings

1200

±20

3600

2400

4800

2400

4800

15780

175

150

-40 ~ +150

4000

5.75

10

2.5

Units

V

V

A

W

°C

VAC

Nm

1

8104

SEPTEMBER 2013

1MBI2400VD-120P

IGBT Modules http://www.fujielectric.com/products/semiconductor/

Electrical characteristics (at Tj= 25°C unless otherwise specified)

Items

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Internal gate resistance

Input capacitance

Turn-on

Turn-off

Forward on voltage

Reverse recovery time

Lead resistance, terminal-chip

Thermal resistance characteristics

Symbols Conditions

I

CES

I

GES

V

GE (th)

V

CE (sat)

(main terminal) V

V

CE (sat)

(chip)

V

GE

= 0V, V

CE

= 1200V

V

CE

= 0V, V

GE

=±20V

V

CE

= 20V, I c

= 2400mA

GE

=15V

I c

= 2400A

T j

=25°C

T j

=125°C

T j

=150°C

T j

=25°C

T j

=125°C

T j

=150°C t

Int Rg t t r

C ies t on off t f

V

F

(main terminal)

V

(chip) rr

F

R lead

I

V

CE

=10V,V

GE

=0V,f=1MHz

V

CC

= 600V, I c

=2400A

Lm = 46nH, V

GE

=±15V ,T j

=125°C

R gon

= 1.8 Ω

R goff

= 0.22 Ω

V

F

GE

= 0V

= 2400A

I

F

= 2400A,T j

=125°C

T j

=25°C

T j

=125°C

T j

=150°C

T j

=25°C

T j

=125°C

T j

=150°C

Items Symbols Conditions

Thermal resistance

Contact Thermal resistance

R

R th(j-c) th(c-f)

IGBT

FWD with Thermal Compound(*)

* This is the value which is defined mounting on the additional cooling fin with thermal compound.

-

-

-

-

-

-

-

-

-

-

min.

-

Characteristics typ.

max.

1.0

-

6.0

-

-

-

-

-

6.5

1.91

2.21

2.31

1.70

-

-

4800

7.0

2.19

-

-

1.95

2.00

2.10

0.73

211

2.38

0.98

1.64

-

-

-

-

-

-

-

0.21

1.91

2.06

2.01

1.70

1.85

-

2.19

-

-

1.95

-

-

-

-

1.80

0.44

0.089

-

-

-

Units mA nA

V

V

Ω nF

µs

V

µs mΩ

Characteristics min.

typ.

-

-

-

-

-

0.004

max.

0.0095

0.0153

-

Units

°C/W

2 3

2

1MBI2400VD-120P

Characteristics (Representative)

Collector current vs. Collector-Emitter voltage (typ.)

Tj=25℃,chip

5400

4800

4200

3600

3000

2400

V

GE

=20V 15V 12V

10V

1800

1200

600

8V

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Collector-Emitter voltage : V

CE

[V]

3000

2400

1800

1200

600

0

0.0

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

V

GE

=+15V,chip

5400

4800

Tj=25°C Tj=125°C

4200 Tj=150°C

3600

1.0

2.0

3.0

4.0


CE

[V]

1000

Capacitance vs. Collector-Emitter voltage (typ.)

V

GE

=0V, f= 1MHz, Tj= 25°C

Cies

100

10

Cres

Coes

1

0 10 20


CE

[V]

30

3


8

6

Collector current vs. Collector-Emitter voltage (typ.)

Tj= 150°C, chip

5400

4800

4200

3600

3000

2400

V

GE

=20V 15V 12V

10V

1800

1200

600

8V

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0


CE

[V]

10

Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)

Tj=25℃,chip

4

2

0

5 10 15 20

Gate - Emitter voltage : V

GE

[ V ]

Ic=4800A

Ic=2400A

Ic=1200A

25

Dynamic Gate charge (typ.)

Tj= 25°C

25

20

15

10

V

CE

-5

-10

5

0

-15

-20

-25

-20 -15 -10 -5 0

V

GE

5 10 15 20 25

1000

800

600

400

200

0

-200

-400

-600

-800

-1000

Gate charge : Qg [ uC ]

1MBI2400VD-120P

4.0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0.0

0

Switching time vs. Collector current (typ.)

Vcc=600V, V

GE

=±15V, R gon

=1.8 Ω, R goff

=0.22 Ω

Tj=125deg.C

Tj=150deg.C

ton toff tr tf

600 1200 1800 2400 3000 3600 4200

Collector current : Ic [ A ]

1400

Switching loss vs. Collector current (typ.)

Vcc=600V, V

GE

=±15V, R gon

=1.8 Ω, R goff

=0.22 Ω

1200

Tj=125deg.C

Tj=150deg.C

Eoff

1000

Eon

800

600

5400

4800

4200

3600

3000

2400

1800

1200

600

0

0

400

200

Err

0

0 600 1200 1800 2400 3000 3600 4200

Collector current : Ic [ A ] , Forward current : I

F

[ A ]

Reverse bias safe operating area (max.)

± V

GE

=15V ,Tj = 150°C

Notice)

Please refer to section 12.

There is definision of V

CE

.

200 400 600 800 1000 1200 1400

Collector - Emitter voltage : V

CE

[ V ]

4


Switching time vs. Gate resistance (typ.)

Vcc=600V, Ic=2400A,V

GE

=±15V

8.0

7.0

6.0

5.0

Tj=125deg.C

Tj=150deg.C

toff ton

4.0

tr

3.0

2.0

1.0

tf

0.0

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

Gate resistance : Rg [ Ω ]

Switching loss vs. Gate resistance (typ.)

Vcc=600V, Ic=2400A,V

GE

=±15V

2500

Tj=125deg.C

Tj=150deg.C

Eon

2000

1500

Eoff

1000

500

Err

0

0.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

Gate resistance : Rg [ Ω ]

5

4

1MBI2400VD-120P

5400

4800

4200

3600

3000

2400

1800

1200

600

0

0.0

Forward current vs. Forward on voltage (typ.) chip

Tj=25℃ Tj=150℃

Tj=125℃

0.5

1.0

1.5

2.0

Forward on voltage : V

F

[ V ]

2.5

3.0

FWD safe operating area (max.)

Tj=150℃

5400

4800

4200

3600

3000

2400

1800

1200

600

0

0

Pvmax=1.70MW

Notice)

Please refer to section 12.

There is definision of V

CE

.

200 400 600 800 1000 1200 1400


CE

[ V ]


Reverse recovery characteristics (typ.)

Vcc=600V, V

GE

=±15V, R gon

=1.8 Ω

1400

1200

1000

800

600

400

200

Tj=125deg.C

Tj=150deg.C

Irr trr

0

0 500 1000 1500 2000 2500 3000 3500 4000

0.0

Forward current : I

F

[ A ]

Transient thermal resistance (max.)

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.1000

FWD

0.0100

IGBT

0.0010

0.0001

0.001

Zth =

4

∑

n = 1 r n

⋅  1 − e

−

τ t n

0.010

0.100

Pulse width : Pw [ sec ]

1.000

τ1

τ2

τ3

τ4 r1 r2 r3 r4

IGBT FWD

0.00120

0.00171

0.00356

0.00591

0.00263

0.00423

0.00211

0.00345

0.0028

0.0395

0.0588

0.0743

0.0024

0.0357

0.0634

0.0737

5

1MBI2400VD-120P

Outline Drawings, mm


Equivalent Circuit Schematic

sense collector gate sense emitter main collector main emitter

6 7

1MBI2400VD-120P


6

WARNING

1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of September 2013.

The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications.

2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji

Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein.

3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction.

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• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment

• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.

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• Transportation equipment (mounted on cars and ships) • Trunk communications equipment

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• Emergency equipment for responding to disasters and anti-burglary devices• Safety devices

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No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.

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Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions set forth herein.

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