H5N2505DL H5N2505DS Datasheet

H5N2505DL H5N2505DS Datasheet
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1.
2.
3.
4.
5.
6.
7.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
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Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of
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and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by
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When exporting the products or technology described in this document, you should comply with the applicable export control
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does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages
incurred by you resulting from errors in or omissions from the information included herein.
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expressly specified in a Renesas Electronics data sheets or data books, etc.
“Standard”:
8.
9.
10.
11.
12.
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anticrime systems; safety equipment; and medical equipment not specifically designed for life support.
“Specific”:
Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or
systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare
intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life.
You should use the Renesas Electronics products described in this document within the range specified by Renesas Electronics,
especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation
characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or
damages arising out of the use of Renesas Electronics products beyond such specified ranges.
Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,
Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system
manufactured by you.
Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable
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Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with
applicable laws and regulations.
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Electronics.
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document or Renesas Electronics products, or if you have any other inquiries.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
H5N2505DL, H5N2505DS
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1107-0300
Rev.3.00
Oct 16, 2006
Features
•
•
•
•
•
Low on-resistance
Low drive current
High speed switching
Low gate change
Avalanche ratings
Outline
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-(2) )
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S) )
4
D
4
1. Gate
2. Drain
3. Source
4. Drain
G
1
1
2
3
S
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Rev.3.00 Oct 16, 2006 page 1 of 7
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
IDR (pulse) Note 1
IAP Note 3
Pch Note 2
θ ch-c
Tch
Tstg
Value
250
±30
5
20
5
20
5
25
5
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
H5N2505DL, H5N2505DS
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Symbol
V (BR) DSS
IDSS
IGSS
VGS (off)
|yfs|
RDS (on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
td (on)
tr
td (off)
tf
VDF
Min
250
—
—
3.0
2.0
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
3.3
0.68
300
42
11
11
2
5
18
18
44
11
1.0
Max
—
1
±0.1
4.5
—
0.89
—
—
—
—
—
—
—
—
—
—
1.5
Unit
V
µA
µA
V
S
Ω
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
Body-drain diode reverse recovery time
Body-drain diode reverse recovery charge
trr
Qrr
—
—
100
0.32
—
—
ns
µC
Note:
4. Pulse test
Rev.3.00 Oct 16, 2006 page 2 of 7
Test Conditions
ID = 10 mA, VGS = 0
VDS = 250 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 2.5 A, VDS = 10 V Note 4
ID = 2.5 A, VGS = 10 V Note 4
VDS = 25 V, VGS = 0,
f = 1 MHz
VDD = 200 V, VGS = 10 V,
ID = 5 A
VDD ≅ 125 V, ID = 2.5 A,
VGS = 10 V
RL = 50 Ω, Rg = 10 Ω
IF = 5 A, VGS = 0 Note 4
IF = 5 A, VGS = 0
diF/dt = 100 A/µs
H5N2505DL, H5N2505DS
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
1000
Ta = 25°C
300
Drain Current ID (A)
Channel Dissipation Pch (W)
40
30
20
10
100
30
10
1
P
DC W = ms
(Tc Op 10 m
s
= 2 erat
5°C ion
)
3
1
0.3
10
µ
0µ s
s
10
0.1 Operation in this
area is limited by
RDS(on)
0.03
0.01
0
10
50
100
150
1
200
100
30
10
300
1000
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
10
10 V
Pulse Test
6
6V
4
5.5 V
2
5V
Drain Current ID (A)
8V
8
−25°C
VDS = 10 V
Pulse Test
7V
Drain Current ID (A)
3
25°C
8
Tc = 75°C
6
4
2
VGS = 4.5 V
4
8
12
16
20
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
8
Pulse Test
6
ID = 5 A
4
2
2A
1A
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Rev.3.00 Oct 16, 2006 page 3 of 7
Drain to Source on State Resistance
RDS(on) (Ω)
Drain to Source Saturation Voltage
VDS(on) (V)
0
10
VGS = 10 V
5
2
1
0.5
0.2
0.1
0.1
Pulse Test
0.3
1
3
10
30
Drain Current ID (A)
100
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS(on) (Ω)
H5N2505DL, H5N2505DS
2.0
VGS = 10 V
Pulse Test
1.6
2A
1.2
ID = 5 A
0.8
1A
0.4
0
−25
0
25
50
75
100 125 150
10
Tc = −25°C
3
1
75°C
25°C
0.3
VDS = 10 V
Pulse Test
0.1
0.1
0.3
1
3
10
30
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
100
10000
500
VGS = 0
f = 1 MHz
3000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
30
Case Temperature Tc (°C)
1000
200
100
50
20
10
5
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
2
1000
300
Ciss
100
30
Coss
10
Crss
3
1
1
1
3
10
30
100
300
150
Dynamic Input Characteristics
Switching Characteristics
VGS
VDD = 200 V
100 V
50 V
12
VDS
8
4
VDD = 200 V
100 V
50 V
0
4
8
12
16
Gate Charge Qg (nC)
Rev.3.00 Oct 16, 2006 page 4 of 7
20
1000
Switching Time t (ns)
16
100
0
100
Drain to Source Voltage VDS (V)
ID = 5 A
200
50
Reverse Drain Current IDR (A)
400
300
0
1000
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
100
VGS = 10 V, VDD = 125 V
PW = 5 µs, duty ≤ 1 %
Rg = 10 Ω
tf
100
tr
tf
td(off)
td(on)
10
tr
1
0.1
0.3
1
3
10
30
Drain Current ID (A)
100
H5N2505DL, H5N2505DS
Gate to Source Cutoff Voltage
vs. Case Temperature
Reverse Drain Current vs.
Source to Drain Voltage
5
Gate to Source Cutoff Voltage
VGS(off) (V)
Reverse Drain Current IDR (A)
10
8
6
4
2
10 V
5V
0
0.4
VGS = 0 V
Pulse Test
0.8
1.2
1.6
VDS = 10 V
ID = 10 mA
4
1 mA
3
0.1 mA
2
1
0
−25
2.0
0
25
50
75
100 125 150
Case Temperature Tc (°C)
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance γs (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θch – c(t) = γs (t) • θch – c
θch – c = 5°C/W, Tc = 25°C
0.1
0.05
0.02
0.03 0.01 ulse
p
ot
1sh
0.01
10 µ
PDM
D=
PW
T
PW
T
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
10 V
Vin
Vout
10%
10%
V DD
= 125 V
90%
td(on)
Rev.3.00 Oct 16, 2006 page 5 of 7
10%
tr
90%
td(off)
tf
H5N2505DL, H5N2505DS
Package Dimensions
• H5N2505DL
JEITA Package Code

RENESAS Code
PRSS0004ZD-B
Previous Code
MASS[Typ.]
0.42g
DPAK(L)-(2) / DPAK(L)-(2)V
1.7 ± 0.5
Package Name
DPAK(L)-(2)
2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
16.2 ± 0.5
3.1 ± 0.5
1.15 ± 0.1
0.8 ± 0.1
(0.7)
4.7 ± 0.5
5.5 ± 0.5
6.5 ± 0.5
5.4 ± 0.5
Unit: mm
0.55 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
• H5N2505DS
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Previous Code
DPAK(S) / DPAK(S)V
6.5 ± 0.5
5.4 ± 0.5
(0.1)
MASS[Typ.]
0.28g
2.3 ± 0.2
0.55 ± 0.1
0 – 0.25
2.5 ± 0.5
(1.2)
1.0 Max.
2.29 ± 0.5
Rev.3.00 Oct 16, 2006 page 6 of 7
Unit: mm
(5.1)
(5.1)
(0.1)
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
Package Name
DPAK(S)
0.8 ± 0.1
2.29 ± 0.5
0.55 ± 0.1
H5N2505DL, H5N2505DS
Ordering Information
Part Name
H5N2505DL-E
H5N2505DSTL-E
Quantity
3200 pcs
3000 pcs
Shipping Container
Box (Sack)
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.3.00 Oct 16, 2006 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a
result of errors or omissions in the information included in this document.
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability
of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular
application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products.
7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications
or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality
and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or
undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall
have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
any other inquiries.
http://www.renesas.com
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology (Shanghai) Co., Ltd.
Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898
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7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.0
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