AS8ERLC128K32

AS8ERLC128K32
EEPROM
AS8ERLC128K32
PIN ASSIGNMENT
128K x 32 Radiation Tolerant EEPROM
(Top View)
68 Lead CQFP
RES\
A0
A1
A2
A3
A4
A5
CS3\
GND
CS4\
WE1\
A6
A7
A8
A9
A10
Vcc
AVAILABLE AS MILITARY
SPECIFICATIONS
• MIL-PRF-38534
I/O0
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
GND
I/O8
I/O9
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
FEATURES
OPTIONS
*Pin #'s 31 and 32, A15 and A14 respectively, are reversed from the AS8E128K32. Correct use
of these address lines is required for operation of the SDP mode to work properly.
PIN NAME
A0 to A16
I/O0 to I/O31
OE\
CE\
WE\
VCC
-250
-300
• Package
Ceramic Quad Flat pack w/ formed leads
Ceramic Quad Flat pack w/ tie bar
Shielded Ceramic Quad Flat pack
Shielded Ceramic Quad Flat pack
Q
QB
SQ
SQB
FUNCTION
FUNCTION
Address Input
FUNCTION
DataFUNCTION
Input/Output
Output Enable
FUNCTION
FUNCTION
Chip
Enable
Write Enable
FUNCTION
Power Supply
FUNCTION
Ground
VSS
FUNCTION
FUNCTION
RDY/BUSY\ Ready Busy
RES\
Reset
MARKINGS
• Timing
250 ns
300 ns
I/O16
I/O17
I/O18
I/O19
I/O20
I/O21
I/O22
I/O23
GND
I/O24
I/O25
I/O26
I/O27
I/O28
I/O29
I/O30
I/O31
Vcc
A11
A12
A13
*A15
*A14
A16
CS1\
OE\
CS2\
NC
WE2\
WE3\
WE4\
NC
NC
RDY
• Access time of 250ns , 300ns
• Operation with single 3.3V (+ .3V) supply
• LOW Power Dissipation:
Active(Worst case): 300mW (MAX), Max Speed Operation
Standby(Worst case): 7.2mW(MAX), Battery Back-up Mode
• Automatic Byte Write: 15 ms (MAX)
• Automatic Page Write (128 bytes): 15 ms (MAX)
• Data protection circuit on power -on/off
• Low power CMOS MNOS cell Technology
• 104 Erase/Write cycles (in Page Mode)
• Software data protection
• TTL Compatible Inputs and Outputs
• Data Retention: 10 years
• Ready/Busy\ and Data Polling Signals
• Write protection by RES\ pin
• Radiation Tolerant: Proven total dose 40K to 100K RADS*
• Shielded Package for Best Radiation Immunity
• Operating Temperature Ranges:
Military: -55oC to +125oC
Industrial: -40oC to +85oC
9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61
10
60
11
59
12
58
13
57
14
56
15
55
16
54
17
53
18
52
19
51
20
50
21
49
22
48
23
47
24
46
25
45
26
44
27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
No. 703Q
No. 703QB
No. 703SF
No. 703SQB
GENERAL DESCRIPTION
The AS8ERLC128K32 is a 4 Megabit Radiation Tolerant
EEPROM Module organized as 128K x 32 bit. User configurable to
256K x16 or 512Kx 8. The module achieves high speed access, low
power consumption and high reliability by employing advanced CMOS
memory technology.
The military grade product is manufactured in compliance to MILSTD 883, making the AS8ERLC128K32 ideally suited for military or
space applications.
The module is offered as a 68 lead 0.880 inch square ceramic
quad flat pack. It has a max. height of 0.200 inch (non-shielded). This
package design is targeted for those applications which require low
profile SMT Packaging.
* Contact factory for more information. 2-sided shielding provided via Tungsten
lids on both sides. 6.5X typ. TID boost due to shielding. (Geostationary orbit)
Proven total dose 40K to 100K RADS. Micross can perform TID lot testing.
AS8ERLC128K32
Rev. 2.1 11/10
RDY/ BUSY\
RES\
FUNCTIONAL BLOCK DIAGRAM
For more products and information
please visit our web site at
www.micross.com
Micross Components reserves the right to change products or specifications without notice.
1
EEPROM
AS8ERLC128K32
TRUTH TABLE
MODE
CE\
OE\
Read
VIL
VIL
Standby
VIH
Write
Deselect
Wirte Inhibit
Data\ Polling
Program Reset
WE\
RES\
2
1
RDY/BUSY\
I/O
High-Z
Dout
VIH
VH
X
X
X
High-Z
High-Z
VIL
VIH
VIL
VH
High-Z to VOL
Din
VIL
VIH
VIH
VH
High-Z
High-Z
X
X
VIH
X
---
---
X
VIL
X
X
---
---
VIL
VIL
VIH
VH
VOL
Dout (I/O7)
X
X
X
VIL
High-Z
High-Z
3
NOTES: 1. RDY/Busy\ output has only active LOW VOL and high impedance state. It can not go to HIGH (VOH) state.
2. VCC - 0.5V < VH < VCC+0.5V
3. X : DON'T CARE
AS8ERLC128K32
Rev. 2.1 11/10
Micross Components reserves the right to change products or specifications without notice.
2
EEPROM
AS8ERLC128K32
ABSOLUTE MAXIMUM RATINGS*
Voltage on Vcc Supply Relative to Vss
Vcc ............................................................................-0.6V to +7.0V
Operating Temperature Range(1) ..................-55C to +125C
Storage Temperature Range .........................-65C to +150C
Voltage on any Pin Relative to Vss...................-0.5V to +7.0V (2)
Max Junction Temperature**.......................................+150C
Thermal Resistance junction to case (JC):
Package Type Q...........................................11.3° C/W
Package Type P & PN..................................2.8° C/W
*Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those
indicated in the operation section of this specification is
not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
**Junction temperature depends upon package type,
cycle time, loading, ambient temperature and airflow,
and humidity (plastics).
NOTES:
1) Including electrical characteristics and data retention.
2) VIN MIN = -1.0V for pulse width < 20ns.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55oC<TA<125oC or -40oC to +85oC; Vcc = 3.3V +/-.3V)
PARAMETER
Input High Voltage
CONDITIONS
SYMBOL
VIH
Input High Voltage (RES\)
VH
Input Low Voltage
VIL
MIN
2.2
VCC -0.3
-0.31
Input Low Voltage (RES\)
VL
-0.3
1
MAX
VCC +0.3
UNITS
V
VCC +.3
V
0.8
V
0.4
V
LOW INPUT Leakage(RES\ Signal)
RES\=0V, VCC=3.6V
ILI(RES)
-300
P$
HIGH INPUT Leakage(RES\ Signal)
RES\=3.6V, VCC=3.6V
IHI(RES)
-10.0
P$
HIGH INPUT Leakage(RES\ Signal)
RES\=3.3V, VCC=3.3V
OV < VIN < VCC
IHI(RES)
-30.0
ILI
-10
10
P$
Outputs(s) Disabled,
OV < VOUT < VCC
ILO
-10
10
P$
Output High Voltage
IOH = -0.4mA
VOH
VCCx.8
--
V
Output High Voltage
IOH = -0.1mA
VOH
VCC-0.3
--
V
Output Low Voltage
IOL = 2.1mA
VOL
--
0.4
V
Output Low Voltage
IOL = 0.1mA
VOL
--
0.2
V
VCC
3
3.6
V
MAX
-250
MAX
-300
30
30
INPUT LEAKAGE CURRENT2
OUTPUT LEAKAGE CURRENT2
Supply Voltage
NOTE:
P$
1) VIL (MIN): -1.0V for pulse width < 20ns.
2) All other Signal pins except RES\
PARAMETER
Power Supply Current:
Operating
Power Supply Current:
Standby
AS8ERLC128K32
Rev. 2.1 11/10
CONDITIONS
SYM
Iout = 0mA, V CC = 3.6V
Cycle = 1μS, Duty = 100%
mA
Icc3
Iout = 0mA, V CC = 3.6V
Cycle = MIN, Duty = 100%
UNITS
80
70
CE\ = VCC, VCC = 3.6V
ICC1
0.4
0.4
mA
CE\ = VIH, VCC = 3.6V
ICC2
4
4
mA
Micross Components reserves the right to change products or specifications without notice.
3
EEPROM
AS8ERLC128K32
CAPACITANCE TABLE1 (VIN = 0V, f = 1 MHz, TA = 25oC, VCC=3.3V)
SYMBOL
SYMBOL
CADD
COE
CWE, CCE
CIO
PARAMETER
PARAMETER
A0 - A16 Capacitance
OE\, RES\, RDY Capacitance
WE\ and CE\ Capacitance
I/O 0- I/O 31 Capacitance
MAX
MAX
40
40
12
20
UNITS
pF
pF
pF
pF
NOTE: 1. This parameter is guaranteed but not tested.
AC TEST CHARACTERISTICS
TEST SPECIFICATIONS
IOL
Input pulse levels...........................................VSS to 3V
Input rise and fall times...........................................5ns
Input timing reference levels.................................1.5V
Output reference levels.........................................1.5V
Output load................................................See Figure 1
Current Source
Device
Under
Test
-
+
Vz = 1.5V
(Bipolar
Supply)
+
Ceff = 50pf
NOTES:
Vz is programmable from -2V to + 5V.
IOL and IOH programmable from 0 to 16 mA.
Vz is typically the midpoint of VOH and VOL.
IOL and IOH are adjusted to simulate a typical resistive load
circuit.
IOH
Current Source
Figure 1
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(-55oC < TA < +125oC or -40oC to +85oC; Vcc = 3.3V +.3V)
DESCRIPTION
TEST CONDITIONS
-250
SYMBOL MIN MAX
tACC
250
-300
MIN MAX UNITS
300
ns
Address to Output Delay
CE\ = OE\ = V IL, WE\ = V IH
CE\ to Output Delay
OE\ = V IL, WE\ = V IH
tCE
OE\ to Output Delay
OE\ = V IL, WE\ = V IH
tOE
10
Address to Output Hold
CE\ = OE\ = V IL, WE\ = V IH
tOH
0
CE\ or OE\ high to Output Float (1)
OE\ = V IL, WE\ = V IH
tDF
0
50
0
50
ns
RES\ low to Output Float (1)
CE\ = OE\ = V IL, WE\ = V IH
tDFR
0
350
0
350
ns
RES\ to Output Delay
CE\ = OE\ = V IL, WE\ = V IH
tRR
0
600
0
600
ns
AS8ERLC128K32
Rev. 2.1 11/10
250
120
10
300
ns
130
ns
0
ns
Micross Components reserves the right to change products or specifications without notice.
4
EEPROM
AS8ERLC128K32
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC WRITE CHARACTERISTICS
(-55oC < TA < +125oC; Vcc = 3.3V +.3V)
SYMBOL
MIN(2)
PARAMETER
MAX
UNITS
tAS
Address Setup Time
0
ms
tAH
Address Hold Time
150
ns
tCS
CE\ to Write Setup Time (WE\ controlled)
0
ns
tCH
CE\ Hold Time (WE\ controlled)
0
ns
tWS
WE\ to Write Setup Time (CE\ controlled)
0
ns
tWH
WE\ to Hold Time (CE\ controlled)
0
ns
tOES
OE\ to Write Setup Time
0
ns
tOEH
OE\ to Hold Time
0
ns
tDS
Data Setup Time
100
ns
tDH
Data Hold Time
10
ns
tWP
WE\ Pulse Width (WE\ controlled)
250
ns
tCW
CE\ Pulse Width (CE\ controlled)
250
ns
tDL
Data Latch Time
750
ns
tBLC
Byte Load Cycle
1
tBL
Byte Load Window
tWC
Write Cycle Time
tDB
Time to Device Busy
Write Start Time
tRP
Reset Protect Time
Reset High Time
100
(3)
150
(5)
ms
ns
(4)
250
μs
μs
15
tDW
tRES
30
ns
100
μs
2
μs
READ TIMING WAVEFORM
ADDRESS
tACC
CE\
OE\
WE\
Data Out
tOH
tCE
tOE
VIH
HIGH-Z
tDF
DATA OUT VALID
tRR
tDFR
RES\
AS8ERLC128K32
Rev. 2.1 11/10
Micross Components reserves the right to change products or specifications without notice.
5
EEPROM
AS8ERLC128K32
BYTE WRITE TIMING WAVEFORM (WE\ CONTROLLED)
tWC
Address
tCS
tCH
tAH
CE\
tAS
WE\
tBL
tWP
tOES
tOEH
OE\
tDS
tDH
Din
RDY/Busy\
HIGH-Z
tRES
tDW
tDB
HIGH-Z
VOL
tRP
RES\
VCC
BYTE WRITE TIMING WAVEFORM (CE\ CONTROLLED)
Address
tWS
tAH
tCW
CE\
WE\
tWC
tBL
tAS
tWH
tOEH
tOES
OE\
tDS
Din
RDY/Busy\
tDH
tDW
tDB
HIGH-Z
tRES
VOL
tRP
HIGH-Z
RES\
VCC
AS8ERLC128K32
Rev. 2.1 11/10
Micross Components reserves the right to change products or specifications without notice.
6
EEPROM
AS8ERLC128K32
PAGE WRITE TIMING WAVEFORM (WE\ CONTROLLED)
Address(6)
A0 to A16
tAS
WE\
tAH
tWP
tDL
tCS
CE\
tBL
tCH
tBLC
tWC
tOES
OE\
tOEH
tDS
tDH
HIGH-Z
Din
HIGH-Z
tDW
tDB
RDY/Busy\
tRP
RES\
tRES
VCC
PAGE WRITE TIMING WAVEFORM (CE\ CONTROLLED)
Address(6)
A0 to A16
tAS
CE\
WE\
tAH
tCW
tBL
tDL
tWS
tWH
tBLC
tWC
tOES
OE\
Din
RDY/Busy\
RES\
tOEH
tDS
HIGH-Z
tDH
HIGH-Z
tDW
tDB
tRP
tRES
VCC
AS8ERLC128K32
Rev. 2.1 11/10
Micross Components reserves the right to change products or specifications without notice.
7
EEPROM
AS8ERLC128K32
DATA POLLING TIMING WAVEFORM
Address
An
An
CE\
tCE(7)
WE\
tOES
tOEH
OE\
tOE(7)
I\O7
Din X
tDW
Dout X
Dout X
tWC
NOTES:
1. tDF and tDFR are defined as the time at which the outputs achieve the open circuit conditions and are no longer driven.
2. Use this device in longer cycle than this value.
3. tWC must be longer than this value unless polling techniques or RDY/Busy\ are used. This device automatically completes
the internal write operation within this value.
4. Next read or write operation can be initiated after tDW if polling techniques or RDY/Busy\ are used.
5. This parameter is sampled and not 100% tested.
6. A7 to A16 are page addresses and must be same (i.e. Not Change) during the page write operation.
7. See AC read characteristics.
AS8ERLC128K32
Rev. 2.1 11/10
Micross Components reserves the right to change products or specifications without notice.
8
EEPROM
AS8ERLC128K32
TOGGLE BIT
This device provides another function to determine the internal programming cycle. If the EEPROM is set to read mode
during the internal programming cycle, I/O6 will charge from "1" to "0" (toggling) for each read. When the internal programming cycle is finished, toggling of I/O6 will stop and the device can be accessible for next read or program.
TOGGLE BIT WAVEFORM
4
Next Mode
Address
tCE3
CE\
WE\
tOE3
OE\
tOES
tOEH
I/O6
Dout
Dout
1
Din
2
Dout
Dout
2
tDW
tWC
NOTES:
1) I/O6 beginning state is "1".
2) I/O6 ending state will vary.
3) See AC read characteristics.
4) Any locations can be used, but the address must be fixed.
SOFTWARE DATA PROTECTION TIMING WAVEFORM (In protection mode)
VCC
WE\
tBLC
Address
5555
Data (each byte)
AA
tBLC
AAAA or
2AAA
55
tBLC
5555
A0
{
CE\
tWC
Write Address*
Write Data
* During this write cycle, data is physically written to the address provided.
AS8ERLC128K32
Rev. 2.1 11/10
Micross Components reserves the right to change products or specifications without notice.
9
EEPROM
AS8ERLC128K32
SOFTWARE DATA PROTECTION TIMING WAVEFORM (In non-protection mode)
VCC
tWC
Normal active mode
CE\
WE\
Address
5555
AAAA
or
2AAA
5555
5555
AAAA 5555
or
2AAA
Data (each byte)
AA
55
80
AA
55
20
FUNCTIONAL DESCRIPTION
Automatic Page Write
Page-mode write feature allows 1 to 128 bytes of data to be
written into the EEPROM in a single write cycle. Following
the initial byte cycle, an additional 1 to 128 bytes can be written
in the same manner. Each additional byte load cycle must be
started within 30μs from the preceding falling edge of WE\ or
CE\. When CE\ or WE\ is kept high for 100μs after data input,
the EEPROM enters write mode automatically and the input
data are written into the EEPROM.
RDY/Busy\ Signal
RDY/Busy\ signal also allows status of the EEPROM to be
determined. The RDY/Busy\ signal has high impedance except
in write cycle and is lowered to VOL after the first write signal.
At the end of write cycle, the RDY/Busy\ signal changes state
to high impedance.
RES\ Signal
When RES\ is low, the EEPROM cannot be read or programmed. Therefore, data can be protected by keeping RES\
low when VCC is switched. RES\ should be high during read
and programming because it doesn't provide a latch function.
See timing diagram below.
DATA\ Polling
DATA\ polling allows the status of the EEPROM to be determined. If EEPROM is set to read mode during the write
cycle, an inversion of the last byte of data to be loaded outputs
from I/O's 7, 15, 23, and 31 to indicate that the EEPROM is
performing a write operation.
RES\ Signal Diagram
VCC
Read inhibit
Read inhibit
RES\1
Program inhibit
Program inhibit
Note(s):
1- RES\=TRUE=VL >/=-0.3v </=0.4v
AS8ERLC128K32
Rev. 2.1 11/10
Micross Components reserves the right to change products or specifications without notice.
10
EEPROM
AS8ERLC128K32
WE\, CE\ Pin Operation
During a write cycle, address are latched by the falling edge
of WE\ or CE\, and data is latched by the rising edge of WE\
or CE\.
Write/Erase Endurance and Data Retention Time
The endurance is 104 cycles in case of the page programming
and 103 cycles in case of the byte programming (1% cumulative
failure rate). The data retention time is more than 10 years when
a device is page-programmed less than 104 cycles.
RDY/Busy\ SIGNAL
RDY/Busy\ signal also allows status of the EEPROM to be
determined. The RDY/Busy\ signal has high impedance except
in write cycle and is lowered to VOL after the first write signal.
At the end of the write cycle, the RDY/Busy\ signal changes
state to high impedance. This allows many AS8ERLC128K32
devices RDY/Busy\ signal lines to be wired-OR together.
mode by mistake. To prevent this phenomenon, this device has
a noise cancellation function that cuts noise if its width is 20ns
or less in program mode.
Be careful not to allow noise of a width more than
20ns on the control pins. See Diagram 1 below.
2. Data Protection at VCC On/Off
When VCC is turned on or off, noise on the control pins
generated by external circuits (CPU, etc.) may act as a trigger
and turn the EEPROM to program mode by mistake. To prevent
this unintentional programming, the EEPROM must be kept
in an unprogrammable state while the CPR is in an unstable
state.
NOTE: The EEPROM should be kept in unprogrammable state during VCC on/off by using CPU RESET signal.
See the timing diagram below.
DIAGRAM 1
PROGRAMMING/ERASE
The AS8ERLC128K32 does NOT employ a BULKerase function. The memory cells can be programmed ‘0’ or
‘1’. A write cycle performs the function of erase & write on
every cycle with the erase being transparent to the user. The
internal erase data state is considered to be ‘1’. To program
the memory array with background of ALL 0’s or All 1’s, the
user would
program this data using the page mode write
operation to program all 1024 128-byte pages.
Data Protection
1. Data Protection against Noise on Control Pins (CE\,
OE\, WE\) During Operation
During readout or standby, noise on the control pins
may act as a trigger and turn the EEPROM to programming
DATA PROTECTION AT VCC ON/OFF
VCC
CPU
RESET
*Unprogrammable
AS8ERLC128K32
Rev. 2.1 11/10
*Unprogrammable
Micross Components reserves the right to change products or specifications without notice.
11
EEPROM
AS8ERLC128K32
Data Protection Cont.
a. Protection by RES\
The unprogrammable state can be realized by the
CPU's reset signal inputs directly to the EEPROM's RES pin.
RES should be kept VSS level during VCC on/off.
The EEPROM brakes off programming operation
when RES becomes low, programming operation doesn't finish correctly in case that RES falls low during programming
operation. RES should be kept high for 10ms after the last data
inputs. See the timing diagram below.
3. Software data protection
To prevent unintentional programming, this device has
the software data protection (SDP) mode. The SDP is enabled
by inputting the 3 bytes code and write data in Chart 1. SDP
is not enabled if only the 3 bytes code is input. To program
data in the SDP enable mode, 3 bytes code must be input before
write data. This 4th cycle during write is required to initiate
the SDP and physically writes the address and data. While in
SDP the entire array is protected in which writes can only occur if the exact SDP sequence is re-executed or the unprotect
sequence is executed.
The SDP is disabled by inputting the 6 bytes code in
Chart 2. Note that, if data is input in the SDP disable cycle,
data can not be written.
The software data protection is not enabled at the
shipment.
NOTE: These are some differences between Micross
and other company's for enable/disable sequence of software
data protection. If these are any questions, please contact
Micross.
PROTECTION BY RES\
VCC
RES\
Program inhibit
Program inhibit
WE\ or CE\
1μ min
100μ min
10 ms min
CHART 1
Address
CHART 2
Address
Data
Data
(each Byte)
(each Byte)
5555
AA
5555
AA
AAAA or 2AAA
55
AAAA or 2AAA
55
5555
A0
5555
80
5555
AA
AAAA or 2AAA
55
5555
20
Write Address
AS8ERLC128K32
Rev. 2.1 11/10
Write Data} Normal data input
Micross Components reserves the right to change products or specifications without notice.
12
EEPROM
AS8ERLC128K32
MECHANICAL DEFINITIONS*
Micross Case #703 (Package Designator Q)
4 x D2
4 x D1
DETAIL A
4xD
R
Pin 1
A2
0o - 7o
B
b
L1
SEE DETAIL A
e
A1
A
D3
SYMBOL
A
A1
A2
b
B
D
D1
D2
D3
e
R
L1
MICROSS PACKAGE SPECIFICATIONS
MIN
MAX
0.123
0.200
0.118
0.186
0.000
0.020
0.013
0.017
0.010 REF
0.800 BSC
0.870
0.890
0.980
1.000
0.936
0.956
0.050 BSC
0.005
--0.035
0.045
*All measurements are in inches.
AS8ERLC128K32
Rev. 2.1 11/10
Micross Components reserves the right to change products or specifications without notice.
13
EEPROM
AS8ERLC128K32
MECHANICAL DEFINITIONS*
Micross Case #703SQ
SYMBOL
A
A1
A2
b
B
D
D1
D2
D3
e
R
L1
MICROSS PACKAGE SPECIFICATIONS
MIN
MAX
0.190
0.235
0.180
0.220
0.005
0.020
0.013
0.017
0.010 REF
0.800 BSC
0.870
0.890
0.980
1.000
0.930
0.960
0.050 BSC
0.005
--0.035
0.045
AS8ERLC128K32
Rev. 2.1 11/10
Micross Components reserves the right to change products or specifications without notice.
14
EEPROM
AS8ERLC128K32
MECHANICAL DEFINITIONS*
Micross Case #703SQB
SYMBOL
A
A1
A2
b
D/E
D1 / E1
D2 / E2
e
e1
j
k
L
S1
MICROSS PACKAGE SPECIFICATIONS
MIN
MAX
0.235
0.180
0.220
0.005
0.020
0.013
0.017
1.500
1.540
0.870
0.890
1.920
2.000
0.050 BSC
0.800 BSC
0.190
0.210
0.890
0.910
0.310
0.330
.040 BSC
Dimensions in Inches
AS8ERLC128K32
Rev. 2.1 11/10
Micross Components reserves the right to change products or specifications without notice.
15
EEPROM
AS8ERLC128K32
MECHANICAL DEFINITIONS*
Micross Case (Package Designator QB)
MICROSS PACKAGE SPECIFICATIONS
MIN
MAX
A
0.157
0.190
A1
0.142
0.175
A2
0.005
0.020
b
0.013
0.017
c
0.009
0.012
D/E
1.500
1.540
D1 / E1
0.870
0.890
D2 / E2
1.920
2.000
0.050 BSC
e
0.800 BSC
e1
j
0.190
0.210
k
0.890
0.910
L
0.310
0.330
.040 BSC
S1
Dimensions in Inches
*All measurements are in inches.
SYMBOL
AS8ERLC128K32
Rev. 2.1 11/10
Micross Components reserves the right to change products or specifications without notice.
16
EEPROM
AS8ERLC128K32
ORDERING INFORMATION
EXAMPLE:
AS8ERLC128K32Q-250/Q
Device Number
Package Type
Speed ns
Process
AS8ERLC128K32
Q
-250
/*
AS8ERLC128K32
Q
-300
/*
AS8ERLC128K32
QB
-250
/*
AS8ERLC128K32
QB
-300
/*
AS8ERLC128K32
SQ
-250
/*
AS8ERLC128K32
SQ
-300
/*
AS8ERLC128K32
SQB
-250
/*
AS8ERLC128K32
SQB
-300
/*
*AVAILABLE PROCESSES
IT = Industrial Temperature Range
XT = Extended Temperature Range
Q = MIL-PRF-38534, Class H compliant
AS8ERLC128K32
Rev. 2.1 11/10
-40oC to +85oC
-55oC to +125oC
-55oC to +125oC
Micross Components reserves the right to change products or specifications without notice.
17
EEPROM
AS8ERLC128K32
MICROSS TO DSCC PART NUMBER
CROSS REFERENCE*
Package Designator Q
Micross Part #
AS8ERLC128K32Q
AS8ERLC128K32Q
SMD Part
to be determined
to be determined
Package Designator QB
Micross Part #
AS8ERLC128K32QB
AS8ERLC128K32QB
SMD Part
to be determined
to be determined
* Micross part number is for reference only. Orders received referencing the SMD part number will be processed per the SMD.
AS8ERLC128K32
Rev. 2.1 11/10
Micross Components reserves the right to change products or specifications without notice.
18
EEPROM
AS8ERLC128K32
DOCUMENT TITLE
128K x 32 Radiation Tolerant EEPROM
Rev #
2.1
AS8ERLC128K32
Rev. 2.1 11/10
History
Release Date
Fixed Pin Assignment formatting
November 2010
issues and added RES\ and RDY/BUSY\
signals to the block diagram, updated
order chart and note at bottom of page 1.
Deleted "Preliminary Specification" from
the top of each page, making the datasheet
"Release" status.
Status
Release
Micross Components reserves the right to change products or specifications without notice.
19
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