RJK0323JPD Datasheet

RJK0323JPD Datasheet
Preliminary Datasheet
RJK0323JPD
Silicon N Channel MOS FET
High Speed Power Switching
R07DS0334EJ0100
Rev.1.00
Apr 18, 2011
Features
•
•
•
•
•
For Automotive application
AEC-Q101 compliant
Low on-resistance : RDS(on) = 7.0 mΩ typ.
Low drive current
Capable of 4.5 V gate drive
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S))
2, 4
D
4
1
1.
2.
3.
4.
1G
2
3
Gate
Drain
Source
Drain
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IAP Note2
EAR Note2
Pch Note3
Tch Note4
Tstg
Value
30
±20
30
120
30
30
90
40
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Thermal Impedance Characteristics
• Channel to case thermal impedance θch-c: 3.125°C/W
R07DS0334EJ0100 Rev.1.00
Apr 18, 2011
Page 1 of 6
RJK0323JPD
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Symbol
IGSS
IDSS
VGS(off)
Static drain to source on state
resistance
RDS(on)
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
Body-drain diode reverse recovery
time
Note:
trr
Min
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
7
9
2600
470
200
40
6
5
25
300
85
7
0.9
30
Max
±10
10
2.5
9
13
—
—
—
—
—
—
—
—
—
—
—
—
Unit
μA
μA
V
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 15 A, VGS= 10 V Note4
ID = 15 A, VGS= 4.5 V Note4
VDS = 10 V, VGS = 0
f = 1 MHz
VDD = 10 V, VGS = 10 V,
ID = 30 A
VGS = 10 V, ID= 15 A,
VDD = 10 V, RL = 2.0 Ω
RG = 4.7 Ω
IF = 30 A, VGS = 0
IF = 30 A, VGS = 0,
diF/dt = 100 A/μs
4. Pulse test
R07DS0334EJ0100 Rev.1.00
Apr 18, 2011
Page 2 of 6
RJK0323JPD
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
40
100
s
10
0.1
s
m
Operation
in this area
is limited RDS(on)
1
DC Operation
Tc = 25°C
1 shot Pulse
0
50
100
Case Temperature
0.01
0.1
150
1
10
100
Tc (°C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
Typical Transfer Characteristics
50
100
10 V
VDS = 10 V
Pulse Test
40
3.1 V
30
VGS = 2.9 V
20
10
Drain Current ID (A)
5V
Drain Current ID (A)
10
10
0μ
=
20
μs
10
s
m
30
10
PW
Drain Current ID (A)
50
1
Channel Dissipation Pch (W)
Power vs. Temperature Derating
10
Tc = 150°C
1
25°C
0.1
−40°C
0.01
Tc = 25°C
Pulse Test
5
0.001
0
10
1
2
3
4
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Static Drain to Source On State Resistance vs.
Gate to Source Voltage
Static Drain to Source On State Resistance
vs. Drain Current
25
ID = 15 A
Pulse Test
20
15
Tc = 150°C
10
25°C
5
−40°C
0
0
4
8
12
16
Gate to Source Voltage VGS (V)
R07DS0334EJ0100 Rev.1.00
Apr 18, 2011
20
Static Drain to Source On State Resistance
RDS(on) (mΩ)
Static Drain to Source On State Resistance
RDS(on) (mΩ)
0
100
Tc = 25°C
Pulse Test
VGS = 4.5 V
10
10 V
1
1
10
100
1000
Drain Current ID (A)
Page 3 of 6
RJK0323JPD
Preliminary
20
Typical Capacitance vs.
Drain to Source Voltage
10000
Pulse Test
ID = 15 A
Capacitance C (pF)
Ciss
15
VGS = 10 V
10
4.5 V
5
0
50
100
Tc = 25°C
VGS = 0
f = 1 MHz
5
10
15
20
25
30
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Reverse Drain Current vs.
Source to Drain Voltage
20
Tc = 25°C
ID = 30 A
16
VGS
VDD = 25 V
10 V
5V
VDS
12
20
8
10
0
Crss
100
Case Temperature Tc (°C)
40
30
Coss
0
150
4
VDD = 25 V
10 V
5V
10
20
30
0
40
50
Gate Charge Qg (nC)
50
Reverse Drain Current IDR (A)
50
1000
10
0
−50
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Static Drain to Source On State Resistance
RDS(on) (mΩ)
Static Drain to Source On State Resistance
vs. Temperature
Tc = 25°C
Pulse Test
40
10 V
30
20
VGS = 0, −5 V
10
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Repetitive Avalanche Energy EAR (mJ)
Avalanche Energy vs.
Channel Temperature Derating
100
IAP = 30 A
VDD = 25 V
duty < 0.1 %
Rg ≥ 50 Ω
80
60
40
20
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
R07DS0334EJ0100 Rev.1.00
Apr 18, 2011
Page 4 of 6
Preliminary
Normalized Transient Thermal Impedance γs (t)
RJK0323JPD
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
D=1
0.5
0.2
θch - c(t) = γs (t) x θch - c
θch - c = 3.125°C/W, Tc = 25°C
0.1
0.1
0.05
0.02
0.01
0.01
10 μ
t
ho
pu
lse
PDM
D=
1s
PW
T
PW
T
100 μ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
L
VDS
Monitor
EAR =
1
L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
V(BR)DSS
Rg
IAP
VDD
D. U. T
VDS
Vin
15 V
ID
50 Ω
0
VDD
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
Rg
RL
Vin
Vout
Vin
10 V
10%
10%
VDS
= 30 V
90%
td(on)
R07DS0334EJ0100 Rev.1.00
Apr 18, 2011
10%
tr
90%
td(off)
tf
Page 5 of 6
RJK0323JPD
Preliminary
Package Dimensions
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Previous Code
DPAK(S) / DPAK(S)V
MASS[Typ.]
0.28g
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
(5.1)
(5.1)
6.5 ± 0.3
5.6 ± 0.5
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
Package Name
DPAK(S)
0 – 0.25
2.5 ± 0.5
(1.2)
1.0 Max.
2.29 ± 0.5
0.8 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
Ordering Information
Orderable Part Number
Quantity
RJK0323JPD-00-J3
3000 pcs
R07DS0334EJ0100 Rev.1.00
Apr 18, 2011
Shipping Container
Taping (Sinistrorse)
Page 6 of 6
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