RJK0632JPD Data Sheet

RJK0632JPD Data Sheet
Preliminary Datasheet
RJK0632JPD
60 V, 20 A Silicon N Channel MOS FET
High Speed Power Switching
R07DS0342EJ0200
Rev.2.00
Oct 16, 2014
Features
•
•
•
•
•
For Automotive application
AEC-Q101 compliant
Low on-resistance : RDS(on) = 29 mΩ typ.
Capable of 4.5 V gate drive
Low input capacitance : Ciss = 440 pF typ.
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S))
2, 4
D
4
1
2
1.
2.
3.
4.
1G
3
Gate
Drain
Source
Drain
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
4. AEC-Q101 compliant
Symbol
VDSS
VGSS
ID
ID (pulse) Note1
IDR
IDR (pulse) Note1
IAP Note2
2
EAR Note
Note3
Pch
Tch Note4
Tstg
Value
60
±20
20
80
20
80
14
16.8
25
175
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
Thermal Impedance Characteristics
• Channel to case thermal impedance θch-c: 6.00°C/W
R07DS0342EJ0200 Rev.2.00
Oct 16, 2014
Page 1 of 6
RJK0632JPD
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Symbol
IGSS
IDSS
VGS(off)
Static drain to source on state
resistance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note:
RDS(on)
Min
—
—
1.0
—
Typ
—
—
—
29
Max
±10
1
2.0
35
Unit
μA
μA
V
mΩ
Test Conditions
VGS = ±20 V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 10 A, VGS= 10 V Note5
RDS(on)
—
41
55
mΩ
ID = 10 A, VGS= 4.5 V Note5
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
—
—
—
—
—
—
—
—
—
—
440
135
85
10
1.4
3.0
8.5
12
40
11
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
VDS = 10 V, VGS = 0
f = 1 MHz
VDF
—
—
0.95
30
1.24
—
V
ns
trr
VDD = 25 V, VGS = 10 V,
ID = 20 A
ID= 10 A, RL = 3 Ω
VGS = 10 V, RG = 4.7 Ω
IF = 20 A, VGS = 0 Note5
IF = 20 A, VGS = 0,
diF/dt = 100 A/μs
5. Pulse test
R07DS0342EJ0200 Rev.2.00
Oct 16, 2014
Page 2 of 6
RJK0632JPD
Preliminary
Main Characteristics
Maximum Safe Operation Area
40
100
100
150
Case Temperature
s
50
1 Operation
in this area
is limited RDS(on)
PW = 10 ms
0.1
Tc (°C)
100
100
3.3 V
16
12
VGS = 2.6 V
8
4
Drain Current ID (A)
Drain Current ID (A)
10
Typical Transfer Characteristics
10 V
5V
Tc = 25°C
Pulse Test
0
5
10
Tc = 175°C
25°C
1
−40°C
0.1
0.01
0.001
0
10
VDS = 10 V
Pulse Test
1
2
3
4
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source State Resistance
vs. Drain Current
200
ID = 10 A
Pulse Test
160
120
Tc = 175°C
80
25°C
40
−40°C
0
0
4
8
12
16
Gate to Source Voltage VGS (V)
R07DS0342EJ0200 Rev.2.00
Oct 16, 2014
20
Static Drain to Source On State Resistance
RDS(on) (mΩ)
Static Drain to Source On State Resistance
RDS(on) (mΩ)
1
Drain to Source Voltage VDS (V)
Typical Output Characteristics
20
DC Operation
0.01
0.1
200
μs
0
m
10
1
20
10
μs
30
Tc = 25°C
1 shot Pulse
0
Drain Current ID (A)
1000
10
Channel Dissipation
50
10
Pch (W)
Power vs. Temperature Derating
1000
Tc = 25°C
Pulse Test
100
VGS = 4.5 V
10 V
10
1
10
100
Drain Current ID (A)
Page 3 of 6
Preliminary
Static Drain to Source on State Resistance
vs. Temperature
100
Typical Capacitance vs.
Drain to Source Voltage
10000
Pulse Test
ID = 10 A
Capacitance C (pF)
80
VGS = 4.5 V
60
40
10 V
20
1000
Ciss
Coss
100
10
0
−50
0
50
100
150
5
10
15
20
25
30
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Reverse Drain Current vs.
Source to Drain Voltage
40
20
VGS
Tc = 25°C
ID = 10 A
16
VDD = 25 V
10 V
5V
30
12
VDS
20
8
VDD = 25 V
10 V
5V
10
4
0
0
0
200
4
8
12
16
20
Gate Charge Qg (nC)
20
Reverse Drain Current IDR (A)
50
Tc = 25°C
VGS = 0
f = 1 MHz
Crss
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
Static Drain to Source On State Resistance
RDS(on) (mΩ)
RJK0632JPD
Tc = 25°C
Pulse Test
10 V
16
12
8
VGS = 0, −5 V
4
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Repetitive Avalanche Energy EAR (mJ)
Avalanche Energy vs.
Channel Temperature Derating
100
IAP = 14 A
VDD = 25 V
duty < 0.1 %
Rg ≥ 50 Ω
80
60
40
20
0
25
50
75
100
125
150
175
Channel Temperature Tch (°C)
R07DS0342EJ0200 Rev.2.00
Oct 16, 2014
Page 4 of 6
Preliminary
Normalized Transient Thermal Impedance γs (t)
RJK0632JPD
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
D=1
0.5
0.2
0.1
0.1
0.05
θch – c(t) = γs (t) • θch – c
θch – c = 6.00°C/W, Tc = 25°C
e
uls
tp
ho
0.01
PDM
1s
D=
0.02
0.01
10 μ
PW
T
PW
T
100 μ
1m
10 m
100 m
1
10
Pulse Width PW (s)
Avalanche Test Circuit
Avalanche Waveform
L
VDS
Monitor
EAR =
1
L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
V (BR)DSS
Rg
IAP
VDD
D. U. T
VDS
Vin
15 V
ID
50 Ω
0
VDD
Switching Time Test Circuit
Switching Time Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
Rg
RL
Vin
Vout
Vin
10 V
10%
10%
VDS
= 30 V
90%
td(on)
R07DS0342EJ0200 Rev.2.00
Oct 16, 2014
10%
tr
90%
td(off)
tf
Page 5 of 6
RJK0632JPD
Preliminary
Package Dimensions
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZD-C
Previous Code
DPAK(S) / DPAK(S)V
MASS[Typ.]
0.28g
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
(5.1)
(5.1)
6.5 ± 0.3
5.6 ± 0.5
1.2 Max
5.5 ± 0.5
1.5 ± 0.5
Package Name
DPAK(S)
0 – 0.25
2.5 ± 0.5
(1.2)
1.0 Max.
2.29 ± 0.5
0.8 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
Ordering Information
Orderable Part Number
Quantity
RJK0632JPD-00-J3
3000 pcs
R07DS0342EJ0200 Rev.2.00
Oct 16, 2014
Shipping Container
Taping (Sinistrorse)
Page 6 of 6
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