BLF2425M8LS140J datasheet

BLF2425M8LS140J datasheet
BLF2425M8L140;
BLF2425M8LS140
Power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at
frequencies from 2400 MHz to 2500 MHz.
The BLF2425M8L140 and BLF2425M8LS140 are designed for high-power CW
applications and are assembled in high performance ceramic packages, available in
eared and earless versions
Table 1.
Typical performance
Typical RF performance at Tcase = 25 C; IDq = 1300 mA in a common source class-AB production
test circuit.
Test signal
CW
f
VDS
PL(AV)
Gp
D
(MHz)
(V)
(W)
(dB)
(%)
2450
28
140
19
56
1.2 Features and benefits








High efficiency
High power gain
Excellent ruggedness
Excellent thermal stability
Integrated ESD protection
Designed for broadband operation (2400 MHz to 2500 MHz)
Internally matched
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Industrial, scientific and medical applications in the frequency range from 2400 MHz to
2500 MHz
BLF2425M8L(S)140
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BLF2425M8L140 (SOT502A)
1
drain
2
gate
3
source
1
1
3
[1]
2
2
3
sym112
BLF2425M8LS140 (SOT502B)
1
drain
2
gate
3
source
1
1
3
[1]
2
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name Description
Version
BLF2425M8L140
-
flanged ceramic package; 2 mounting holes; 2 leads
SOT502A
BLF2425M8LS140
-
earless flanged ceramic package; 2 leads
SOT502B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
-
65
V
VGS
gate-source voltage
0.5
+13
V
Tstg
storage temperature
65
-
C
-
225
C
junction temperature
Tj
[1]
[1]
Continuous use at maximum temperature will affect the reliability
5. Thermal characteristics
Table 5.
BLF2425M8L140_2425M8LS140#2
Product data sheet
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
Rth(j-c)
thermal resistance from junction to case
Tcase = 80 C; PL = 125 W
0.28
K/W
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
2 of 11
BLF2425M8L(S)140
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage
Min Typ
Max Unit
VGS = 0 V; ID = 2.16 mA
65
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 216 mA
1.5
1.9
2.3
V
IDSS
drain leakage current
VGS = 0 V; VDS = 28 V
-
-
5
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
41
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
500
nA
gfs
forward transconductance
VDS = 10 V; ID = 10.8 A
-
16
-
S
RDS(on)
drain-source on-state resistance
VGS = VGS(th) + 3.75 V;
ID = 7.56 A
-
69
-
m
Table 7.
RF characteristics
Test signal: CW; f = 2450 MHz; VDS = 28 V; IDq = 1300 mA; Tcase = 25 C unless otherwise specified
in a class-AB production test circuit.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL = 140 W
17.5
19
-
dB
RLin
input return loss
PL = 140 W
-
16
8
dB
D
drain efficiency
PL = 140 W
51
56
-
%
7. Test information
7.1 Ruggedness in class-AB operation
The BLF2425M8L140 and BLF2425M8LS140 are capable of withstanding a load
mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: VDS = 28 V; IDq = 1300 mA; PL = 140 W (CW); f = 2450 MHz.
7.2 Impedance information
Table 8.
Typical impedance
Measured load-pull data. Typical values unless otherwise specified. IDq = 1300 mA; VDS = 28 V.
ZS and ZL defined in Figure 1.
BLF2425M8L140_2425M8LS140#2
Product data sheet
f
ZS
(MHz)
()
()
2400
3.7  5.4j
1.3  1.5j
2450
6.9  5.0j
1.5  1.6j
2500
8.7  2.0j
1.5  1.6j
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
ZL
© Ampleon The Netherlands B.V. 2015. All rights reserved.
3 of 11
BLF2425M8L(S)140
Power LDMOS transistor
drain
ZL
gate
ZS
001aaf059
Fig 1.
Definition of transistor impedance
7.3 Circuit information
C8
C2
C3
C4
C6
C5
R1
C1
C7
aaa-003079
Printed-Circuit Board (PCB): Rogers 4350B; r = 3.5; thickness = 0.508 mm;
thickness copper plating = 35 m.
See Table 9 for a list of components.
Fig 2.
Component layout for application circuit
Table 9.
List of components
For test circuit see Figure 2.
BLF2425M8L140_2425M8LS140#2
Product data sheet
Component
Description
Value
Remarks
C1, C4, C5
multilayer ceramic chip capacitor
15 pF
ATC100B
C2, C6
multilayer ceramic chip capacitor
10 F, 50 V
Murata
C3
multilayer ceramic chip capacitor
100 nF
Murata
C7
multilayer ceramic chip capacitor
62 pF
ATC100B
C8
electrolytic capacitor
22 F, 63 V
R1
resistor
10 
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
SMD 0805; Bourns
© Ampleon The Netherlands B.V. 2015. All rights reserved.
4 of 11
BLF2425M8L(S)140
Power LDMOS transistor
BLF2425M8L140_2425M8LS140#2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
5 of 11
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