BCR08DS-14A Data Sheet (700V-0.8A

BCR08DS-14A Data Sheet (700V-0.8A
Preliminary Datasheet
BCR08DS-14A
R07DS0258EJ0300
Rev.3.00
Dec 01, 2014
700V-0.8A-Triac
Low Power Use
Features
• Planar Passivation Type
• Surface Mounted Type
• Completed Pb Free
• IT (RMS) : 0.8 A
• VDRM :700 V
• IFGTI, IRGTI, IRGTIII : 5 mA
Outline
RENESAS Package code: PRSP0004ZB-A
RENESAS Package code: PRSP0004ZA-A
(Package name: SOT-223)
(Package name: SOT-223)
4
4
3
2
1
be
o
T
G 2, 4
K
d3 P
e
L2
O
1
E
1.
2.
3.
3 4.
T1 Terminal
T2 Terminal
Gate Terminal
T2 Terminal
1
Applications
Washing machine, electric fan, air cleaner, other general purpose control applications
Maximum Ratings
Parameter
Voltage class
14
700
840
Symbol
Note1
Repetitive peak off-state voltage
Non- repetitive peak off-state voltageNote1
Notes: 1. Gate open.
VDRM
VDSM
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
0.8
Unit
A
Surge on-state current
ITSM
8
A
I2t
0.26
A2 s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
1
0.1
6
0.5
– 40 to +125
– 40 to +125
0.12
W
W
V
A
°C
°C
g
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
R07DS0258EJ0300 Rev.3.00
Dec 01, 2014
Unit
V
V
Conditions
Commercial frequency, sine full wave
Note3
360° conduction, Tc= 96°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Page 1 of 7
BCR08DS-14A
Preliminary
Electrical Characteristics
Parameter
Symbol
BCR08DS-14A#B10
BCR08DS-14A#BD0
BCR08DS-14A#B11
Unit
Repetitive peak off-state
current
On-state voltage
IDRM
Min.
—
VTM
—
—
2.0
—
—
2.0
V
Tc = 25°C, ITM =1.2 A
instantaneous
measurement
Ι
VFGTΙ
—
—
2.0
—
—
2.0
V
ΙΙ
ΙΙΙ
IV
VRGTΙ
VRGTΙΙΙ
VFGTΙΙΙ
—
—
—
—
—
—
2.0
2.0
—
—
—
—
—
—
—
2.0
2.0
2.0
V
V
V
Tj = 25°C, VD = 6 V
RL = 6 Ω, RG = 330 Ω
Ι
IFGTΙ
—
—
5
—
—
5
mA
ΙΙ
ΙΙΙ
IV
IRGTΙ
IRGTΙΙΙ
IFGTΙΙΙ
—
—
—
—
—
—
5
5
—
—
—
—
—
—
—
5
5
7
mA
mA
mA
VGD
0.2
—
—
0.2
—
—
Gate trigger
Note2
voltage
Gate trigger
Note2
current
Typ.
—
Max.
1.0
Min.
—
Typ.
—
Max.
1.0
mA
Test conditions
Tj = 125°C
VDRM applied
Tj = 25°C, VD = 6 V
RL = 6 Ω, RG = 330 Ω
Rth (j-c)
—
—
25
—
—
25
Critical-rate of rise of offstate commutating
voltage Note4
(dv/dt)c
0.5
—
—
0.5
—
—
Tj = 125°C
VD = 1/2 VDRM
Note3
°C/W Junction to case
V/μs Tj = 125°C
Critical-rate of rise of offNote5
state voltage
dv/dt
200
—
—
200
—
—
V/μs
Gate non-trigger voltage
Thermal resistance
V
Tj = 125°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T2 tab.
4. Test conditions of the critical-rate of rise of off-state commutating voltage are shown in the table below.
Commutating voltage and current waveforms (inductive
Test conditions
load)
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.4 A/ms
3. Peak off-state voltage
VD = 400 V
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
5. Test conditions of the critical-rate of rise of off-state voltage are shown in the table below.
Test conditions
Off-state voltage waveforms
1. Junction temperature
Tj = 125°C
2. Off-state voltage waveform
Linear waveform
3. Peak off-state voltage
VD = 200 V
4. Gate open
VD
0.9VD
dv/dt = 0.8 VD/(t2 - t1)
0.1VD
0
R07DS0258EJ0300 Rev.3.00
Dec 01, 2014
t1
t2
t
Page 2 of 7
BCR08DS-14A
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
101
10
Surge On-State Current (A)
100
1.5
3.0
0
100
4.0
PGM = 1W
PG(AV) =
0.1W
IGM =
0.5A
IFGT I,
IRGT I, IRGT III
VGD = 0.2V
101
102
101
102
103
103
Typical Example
IFGT I ,IRGT I,IRGTIII
102
IFGT III
VD=6V
RL=6Ω
101
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
Typical Example
102
–40
2
Gate Trigger Current vs.
Junction Temperature
VGT = 2V
101
4
Gate Characteristics
VGM = 6V
100
3.5
6
Conduction Time (Cycles at 60Hz)
10−1
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
2.5
8
On-State Voltage (V)
101
Gate Voltage (V)
2.0
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
10−1
1.0
0
40
80
120
Junction Temperature (°C)
R07DS0258EJ0300 Rev.3.00
Dec 01, 2014
160
Transient Thermal Impedance (°C/W)
On-State Current (A)
Tj = 25°C
102
30
103
104
100
101
25
20
15
10
5
0
10−1
102
Conduction Time (Cycles at 60Hz)
Page 3 of 7
BCR08DS-14A
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
Maximum On-State Power Dissipation
160
Case Temperature (°C)
On-State Power Dissipation (W)
2.0
1.6
1.2
0.8
360°
Conduction
Resistive,
inductive loads
0.4
0.4
0.6
1.0
1.2
0
0.2
0.4
0.6
0.8
1.0
Holding Current vs.
Junction Temperature
5
4
3
0
40
80
120
160
Typical Example
10
2
10
1
–40
0
40
80
120
Junction Temperature (°C)
Latching Current vs.
Junction Temperature
Breakover Voltage vs.
Junction Temperature
T2+, G–
Typical Example
0
T2–, G–
T2+, G+
Typical Example
T2–, G+
–40
103
Junction Temperature (°C)
1
−1
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
Distribution
10
360°
Conduction
Resistive,
inductive loads
40
RMS On-State Current (A)
2
10
60
1.4
2
10
80
RMS On-State Current (A)
10
–40
10
Latching Current (mA)
0.8
0
40
80
120
Junction Temperature (°C)
R07DS0258EJ0300 Rev.3.00
Dec 01, 2014
160
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
0.2
Typical Example
10
100
0
0
10
120
20
0
10
Curves apply regardless of
conduction angle
140
160
160
Typical Example
140
120
100
80
60
40
20
0
–40
0
40
80
120
160
Junction Temperature (°C)
Page 4 of 7
Preliminary
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Commutation Characteristics (Tj=125°C)
101
160
Typical Example
Tj = 125°C
140
120
100
80
60
I Quadrant
III Quadrant
40
20
0
100
101
102
103
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
BCR08DS-14A
III Quadrant
100
I Quadrant
Minimum
Characteristics
Value
10−1
10−1
Rate of Rise of Off-State Voltage (V/μs)
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Gate Trigger Current vs.
Gate Current Pulse Width
103
Conditions
VD = 200V
IT = 1A
τ = 500μs
Tj = 125°C
Typical Example
100
101
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Trigger Characteristics Test Circuits
Typical Example
6Ω
6Ω
IRGT III
IRGT I
A
6V
V
102
A
6V
330Ω
330Ω
V
Test Procedure I
Test Procedure II
6Ω
6Ω
IFGT I
IFGT III
101 0
10
A
6V
101
Gate Current Pulse Width (μs)
R07DS0258EJ0300 Rev.3.00
Dec 01, 2014
102
V
330Ω
Test Procedure III
A
6V
V
330Ω
Test Procedure IV
Page 5 of 7
BCR08DS-14A
Preliminary
Package Dimensions
JEITA Package Code

RENESAS Code
PRSP0004ZA-A
Previous Code

MASS[Typ.]
0.12g
6.6 ± 0.1
Unit: mm
1.8 max.
G
K
P
d
3.0 ± 0.1
7.0 ± 0.3
3.5 ± 0.2
1.75
0.33
33 ± 0
0.1
.1
0.05 ± 0.05
1.75
1
75
e
L
O
E
e
b
o
1.0 ± 0.2
Package Name
SOT-223
0.74 ± 0.1
0.1
T
Package Name
SOT-223
0.33 ± 0.1
2.3
0.1
JEITA Package Code
_
RENESAS Code
PRSP0004ZB-A
Previous Code
SOT-223A
MASS[Typ.]
0.12g
Unit: mm
6.5 ± 0.2
7.0 ± 0.3
3.5 ± 0.2
1.0 ± 0.1
1.66 ± 0.14
+0.10
3.0 −0.05
0.7 ± 0.1
0.28 ± 0.04
0.06 ± 0.04
2.3 ± 0.1 2.3 ± 0.1
R07DS0258EJ0300 Rev.3.00
Dec 01, 2014
Page 6 of 7
BCR08DS-14A
Preliminary
Ordering Information
Orderable Part Number
Packing
Quantity
BCR08DS-14AT13#B10
Embossed Tape
3000 pcs.
BCR08DS-14AT13#B11
Embossed Tape
3000 pcs.
BCR08DS-14AT13#BD0
Embossed Tape
3000 pcs.
Note : Please confirm the specification about the shipping in detail.
R07DS0258EJ0300 Rev.3.00
Dec 01, 2014
Remark
Not Recommended for New Design
Not Recommended for New Design
Taping direction “T1”
Page 7 of 7
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