BCR25PM-14LJ Datasheet

BCR25PM-14LJ Datasheet
Preliminary Datasheet
BCR25PM-14LJ
R07DS1224EJ0100
Rev.1.00
Jul 28, 2014
700V - 25A - Triac
Medium Power Use
Features
•
•
•
•
•
•
•
•
IT (RMS) : 25 A
VDRM : 800 V (Tj=125°C)
Tj: 150 °C
IFGTI, IRGTI, IRGT III : 50 mA
Insulated Type
Planar Passivation Type
Viso : 2000V
UL Recognized: File No. E223904
Outline
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F )
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Vacuum cleaner, electric heater, light dimmer, copying machine, and other general controlling devices
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Symbol
Note1
VDRM
Non-repetitive peak off-state voltageNote1
VDSM
Voltage class
14
800
700
840
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
25
Unit
A
Surge on-state current
ITSM
250
A
I2t
262
A2 s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
–40 to +150
–40 to +150
2.0
2000
W
W
V
A
°C
°C
g
V
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Unit
Conditions
V
Tj = 125°C
Tj = 150°C
V
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 60°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1 • T2 • G terminal to case
Notes: 1. Gate open.
R07DS1224EJ0100 Rev.1.00
Jul 28, 2014
Page 1 of 7
BCR25PM-14LJ
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
Symbol
IDRM
On-state voltage
VTM
Min.
—
—
—
Typ.
—
—
—
Max.
3.0
5.0
1.5
Unit
mA
mA
V
Test conditions
Tj = 125°C, VDRM applied
Tj = 150°C, VDRM applied
Tc = 25°C, ITM = 40 A,
instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
VFGTΙ
VRGTΙ
VRGTΙΙΙ
—
—
—
—
—
—
2.0
2.0
2.0
V
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate trigger curentNote2
Ι
ΙΙ
ΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
—
—
—
—
—
—
50
50
50
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
VGD
0.2
0.1
—
10
1
—
—
—
—
—
—
—
3.0
—
—
V
V
°C/W
V/μs
V/μs
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltageNote4
Notes: 2.
3.
4.
5.
Rth (j-c)
(dv/dt)c
Tj = 125°C, VD = 1/2 VDRM
Tj = 150°C, VD = 1/2 VDRM
Junction to caseNote3
Tj = 125°C
Tj = 150°C
Measurement using the gate trigger characteristics measurement circuit.
The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
Test conditions of the critical-rate of rise of off-state commutation voltage are shown in the table below.
Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it’s advisable that heatsink is electrically floating.
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –13 A/ms
3. Peak off-state voltage
VD = 400 V
R07DS1224EJ0100 Rev.1.00
Jul 28, 2014
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 7
BCR25PM-14LJ
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
103
400
Surge On-State Current (A)
102
101
100
0.5
1.0
1.5
2.0
2.5
3.0
100
101
102
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
VGM = 10 V
101
7
5 VGT = 2.0 V
3
2
PGM = 5 W
PG(AV) =
0.5 W
IGM = 2 A
100
7
5
3
2
10–1
IFGT I, IRGT I, IRGT III
7
5
101 2 3 5 7 102 2 3
VGD = 0.1 V
5 7103
2 3
5 7104
103
Typical Example
102
IFGT I
IRGT I
IRGT III
101
-40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
Typical Example
102
101
-40
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Conduction Time (Cycles at 60Hz)
3
2
Gate Voltage (V)
200
On-State Voltage (V)
5
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
300
0
100
3.5
0
40
80
120
Junction Temperature (°C)
R07DS1224EJ0100 Rev.1.00
Jul 28, 2014
160
Transient Thermal Impedance (°C/W)
On-State Current (A)
Ta = 25°C
102
4
103
104
105
100
101
102
3
2
1
10-1
Conduction Time (Cycles at 50Hz)
Page 3 of 7
BCR25PM-14LJ
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
Maximum On-State Power Dissipation
160
20
10
360° Conduction
Resistive,
inductive loads
0
10
20
30
40
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
10
20
30
40
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
160
160 160 t2.3
140
120 120 t2.3
100 100 t2.3
120
Curves apply regardless
of conduction angle
Resistive, inductive loads
Natural convection
All fins are black
painted aluminum
and greased
100
80
60
40
20
0
0
10
20
30
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
40
0
1
2
3
4
5
RMS On-State Current (A)
RMS On-State Current (A)
Breakover Voltage vs.
Junction Temperature
Repetitive Peak Off-State Current vs.
Junction Temperature
103
Typical Example
102
101
-40
Ambient Temperature (°C)
Ambient Temperature (°C)
Case Temperature (°C)
30
0
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Curves apply
regardless of
conduction angle
140
0
40
80
120
Junction Temperature (°C)
R07DS1224EJ0100 Rev.1.00
Jul 28, 2014
160
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
On-State Power Dissipation (W)
40
106
Typical Example
105
104
103
102
-40
0
40
80
120
160
Junction Temperature (°C)
Page 4 of 7
BCR25PM-14LJ
Preliminary
Latching Current vs.
Junction Temperature
103
103
Latching Current (mA)
Typical Example
102
101
-40
0
40
80
120
102
101
T2–, G–
Typical
Example
0
T2+, G+
Typical
Example
40
80
120
160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
Typical Example
Tj = 125°C
140
120
III Quadrant
100
80
I Quadrant
60
40
20
0
101
102
103
104
160
Typical Example
Tj = 150°C
140
120
III Quadrant
100
80
I Quadrant
60
40
20
0
101
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
Commutation Characteristics (Tj=150°C)
102
Typical Example
Tj = 125°C
IT = 4A
τ = 500μs
VD = 200V
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
102
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
T2+, G–
Typical
Example
Distribution
100
-40
160
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (dv/dt = xV/μs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Holding Current vs.
Junction Temperature
I Quadrant
Minimum
Value
101
III Quadrant
Main Voltage
(dv/dt)c
Main Current
IT
Time
VD
(di/dt)c
τ
100
100
Time
Typical Example
Tj = 150°C
IT = 4A
τ = 500μs
VD = 200V
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
I Quadrant
101
III Quadrant
Minimum
Value
100
101
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS1224EJ0100 Rev.1.00
Jul 28, 2014
102
100
101
102
Rate of Decay of On-State
Commutating Current (A/ms)
Page 5 of 7
BCR25PM-14LJ
Preliminary
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Gate Trigger Current vs.
Gate Current Pulse Width
103
Typical Example
IRGT III
IRGT I
2
10
IFGT I
101 0
10
101
102
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
6Ω
Recommended Circuit Values Around The Triac
Load
6Ω
C1
A
6V
V
Test Procedure I
R1
A
6V
330Ω
V
C0
R0
330Ω
Test Procedure II
C1 = 0.1 to 0.47μF C0 = 0.1μF
R0 = 100Ω
R1 = 47 to 100Ω
6Ω
A
6V
V
330Ω
Test Procedure III
R07DS1224EJ0100 Rev.1.00
Jul 28, 2014
Page 6 of 7
BCR25PM-14LJ
Preliminary
Package Dimensions
Package Name
TO-220F
JEITA Package Code
SC-67
RENESAS Code
PRSS0003AA-A
Previous Code
T220F
MASS[Typ.]
2.0g
Unit: mm
10.5Max
2.8
17
8.5
5.0
1.2
5.2
φ3.2 ± 0.2
13.5Min
3.6
1.3Max
0.8
2.54
0.5
2.6
4.5
2.54
Ordering Information
Orderable Part Number
BCR25PM-14LJ#B00
BCR25PM-14LJ#B00
Packing
Bag
Tube
Quantity
100 pcs.
50 pcs.
Remark
Straight type
 :Lead forming type
Note : Please confirm the specification about the shipping in detail.
R07DS1224EJ0100 Rev.1.00
Jul 28, 2014
Page 7 of 7
Notice
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