CR05AM-16A Data Sheet (800V-0.3A

CR05AM-16A Data Sheet (800V-0.3A
Preliminary Datasheet
CR05AM-16A
R07DS0988EJ0200
Rev.2.00
Aug 25, 2015
800V-0.3A-Thyristor
Low Power Use
Features








IT (AV) : 0.3 A
VDRM : 800 V
IGT : 100 
RoHS Compliant
Non-Insulated Type
Planar Passivation Type
Halogen-free package (PRSS0003DJ-A)
Completely Pb-free package (PRSS0003DJ-A)
Outline
RENESAS Package code: PRSS0003EA-A
PRSS0003DJ-A
(Package name: TO-92*) (Package name: TO-92)
2
1. Cathode
2. Anode
3. Gate
3
3
2
3
1
1
2
1
Applications
Leakage protector, timer, and gas igniter
Maximum Ratings
Parameter
Symbol
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage Note1
Non-repetitive peak off-state voltage Note1
DC off-state voltage Note1
VRRM
VRSM
VR(DC)
VDRM
VDSM
VD(DC)
Voltage class
16
800
960
640
800
960
640
Unit
V
V
V
V
V
V
Notes: 1. With gate to cathode resistance RGK = 1 k
R07DS0988EJ0200 Rev.2.00
Aug 25, 2015
Page 1 of 8
CR05AM-16A
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
R07DS0988EJ0200 Rev.2.00
Aug 25, 2015
Preliminary
Symbol
IT(RMS)
IT(AV)
Ratings
0.47
0.3
Unit
A
A
ITSM
10
A
I2t
0.4
A2 s
PGM
PG(AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
0.5
0.1
6
6
0.3
– 40 to +125
– 40 to +125
0.23
W
W
V
V
A
C
C
g
Conditions
Commercial frequency, sine half wave
180 conduction, Ta = 62C
60 Hz sine half wave, 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Page 2 of 8
CR05AM-16A
Preliminary
Electrical Characteristics
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
Symbol
IRRM
IDRM
Min.
—
—
Typ.
—
—
Max.
0.1
0.1
Unit
mA
mA
On-state voltage
VTM
—
—
1.8
V
Gate trigger voltage
Gate non-trigger voltage
VGT
VGD
—
0.2
—
—
0.8
—
V
V
IGT
IH
Rth(j-a)
1 Note2
—
—
—
—
—
100 Note2
3
180
μA
mA
C/W
Gate trigger current
Holding current
Thermal resistance
Test conditions
Tj = 125C, VRRM applied
Tj = 125C, VDRM applied
RGK = 1 k
Tj = 25C, ITM = 4 A
instantaneous value
Tj = 25C, VD = 6 V, IT = 0.1 A Note2
Tj = 125C, VD = 1/2 VDRM
RGK = 1 k
Tj = 25C, VD = 6 V, IT = 0.1 A Note2
Tj = 25°C, VD = 12 V, RGK = 1 k
Junction to ambient
Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible.
Item
D
E
IGT (A)
Notes: 3.
1 to 50
20 to 100
The above values do not include the current flowing through the 1 k resistance between the gate and cathode.
IGT, VGT measurement circuit.
A1
3V
DC
IGS
IGT
A3
A2
RGK
1
1kΩ
Switch
2
60Ω
TUT
V1
6V
DC
VGT
Switch 1 : IGT measurement
Switch 2 : VGT measurement
(Inner resistance of voltage meter is about 1kΩ)
R07DS0988EJ0200 Rev.2.00
Aug 25, 2015
Page 3 of 8
CR05AM-16A
Preliminary
Performance Curves
Maximum On-State Characteristics
10
Surge On-State Current (A)
Ta = 25°C
100
10−1
10−2
0
1
2
3
× 100 (%)
IGT = 100μA
(Tj = 25°C)
VGD = 0.2V
10−1
100
IFGM = 0.3A
101
102
103
Typical Example
102
101
100
–40
0
40
80
120
160
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
1.0
Gate Trigger Voltage (V)
102
Gate Current (mA)
Transient Thermal Impedance (°C/W)
Gate Voltage (V)
VGT = 0.8V
(Tj = 25°C)
0.8
Typical Distribution
0.6
Typical Example
0.2
0
–40
101
Gate Trigger Current vs.
Junction Temperature
VFGM = 6V
0.4
2
Gate Characteristics
PG(AV) = 0.1W
10−1
4
Conduction Time (Cycles at 60Hz)
PGM = 0.5W
100
6
On-State Voltage (V)
102
101
8
0
100
4
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
On-State Current (A)
101
Rated Surge On-State Current
0
40
80
120
Junction Temperature (°C)
R07DS0988EJ0200 Rev.2.00
Aug 25, 2015
160
100
200
101
102
103
10−2
10−1
100
160
120
80
40
0
10−3
Time (s)
Page 4 of 8
CR05AM-16A
Preliminary
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
160
θ = 30°
0.3
0.2
θ
360°
0.1
0
Resistive,
inductive loads
0
0.1
0.2
0.4
0.3
θ
120
360°
Resistive,
inductive loads
Natural convection
100
80
60
40
θ = 30° 90° 180°
60° 120°
20
0
0.5
0
0.1
0.2
0.4
0.3
0.5
Average On-State Current (A)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
60°
θ = 30°
0.4
120°
90°
160
180°
0.3
0.2
θ
0.1
θ
360°
0
Ambient Temperature (°C)
Average Power Dissipation (W)
140
Average On-State Current (A)
0.5
Resistive loads
0
0.1
0.2
0.4
0.3
140
θ
120
360°
Resistive loads
Natural convection
100
80
60
40
20
0
0.5
θ
θ = 30° 60° 90° 120° 180°
0
0.1
0.2
0.4
0.3
0.5
Average On-State Current (A)
Average On-State Current (A)
Maximum Average Power Dissipation
(Rectangular Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
0.5
Average Power Dissipation (W)
Ambient Temperature (°C)
0.4
180°
120°
90°
60°
0.4
θ = 30°
270°
180°
120°
90°
DC
60°
0.3
0.2
θ
360°
0.1
0
Resistive,
inductive loads
0
0.1
0.2
0.3
0.4
Average On-State Current (A)
R07DS0988EJ0200 Rev.2.00
Aug 25, 2015
0.5
160
Ambient Temperature (°C)
Average Power Dissipation (W)
0.5
Resistive,
inductive loads
Natural convection
140
θ
360°
120
θ = 30°
60°
100
90°
120°
180°
270°
DC
80
60
40
20
0
0
0.1
0.2
0.3
0.4
0.5
Average On-State Current (A)
Page 5 of 8
Preliminary
140
120
100
80
60
40
20
0
–40
0
40
80
120
160
160
Typical Example
Tj = 125°C
RGK=1kΩ
140
120
100
80
60
40
20
0 0
10
101
102
103
Rate of Rise of Off-State Voltage (V/μs)
Holding Current vs.
Junction Temperature
Repetitive Peak Reverse Voltage vs.
Junction Temperature
VD=12V
RGK=1kΩ
Holding Current (mA)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Junction Temperature (°C)
102
101
Typical Distribution
100
Typical Example
10−1
–40
Breakover Voltage (dv/dt = vV/μs)
Breakover Voltage (dv/dt = 1V/μs)
RGK = 1kΩ
Typical Example
0
40
80
120
160
Junction Temperature (°C)
× 100 (%)
160
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
× 100 (%)
Breakover Voltage vs.
Junction Temperature
× 100 (%)
CR05AM-16A
160
Typical Example
140
120
100
80
60
40
20
0
–40
0
40
80
120
160
Junction Temperature (°C)
Gate Trigger Current vs.
Gate Current Pulse Width
104
Gate Trigger Current (μA)
Typical Example
Ta = 25°C
103
102
101 1
10
102
103
Gate Current Pulse Width (μs)
R07DS0988EJ0200 Rev.2.00
Aug 25, 2015
Page 6 of 8
CR05AM-16A
Preliminary
Package dimensions
Package Name
TO-92*
JEITA Package Code
SC-43A
RENESAS Code
PRSS0003EA-A
Previous Code
T920
MASS[Typ.]
0.23g
Unit: mm
φ5.0Max
11.5Min
5.0Max
4.4
1.25 1.25
3.6
1.1
Circumscribed circle φ0.7
JEITA Package Code
RENESAS Code
Previous Code
MASS (Typ) [g]
SC-43A
PRSS0003DJ-A
TO-92
0.23
Unit: mm
+0.25
14.47 ± 0.4
4.58 ± 0.2
4.58 −0.15
+0.10
0.46 ± 0.1
0.38 −0.05
(3.86 MAX)
1.02 ± 0.1
1.27
R07DS0988EJ0200 Rev.2.00
Aug 25, 2015
Page 7 of 8
CR05AM-16A
Preliminary
Ordering Information
Orderable Part Number
CR05AM-16A#B00
CR05AM-16A#BD0
Package
Packing Note
TO-92* Plastic Bag
TO-92 Plastic Bag
Quantity
500 pcs.
1000 pcs.
Remark
Straight type
Straight type, Halogen-free
Note : Please confirm the specification about the shipping in detail.
R07DS0988EJ0200 Rev.2.00
Aug 25, 2015
Page 8 of 8
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