2SJ532 Datasheet

2SJ532 Datasheet
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2SJ532
Silicon P Channel MOS FET
REJ03G0882-0400
(Previous: ADE-208-653B)
Rev.4.00
Sep 07, 2005
Description
High speed power switching
Features
• Low on-resistance
RDS (on) = 0.042 Ω typ.
• Low drive current.
• 4 V gate drive devices.
• High speed switching.
Outline
RENESAS Package code: PRSS0003AE-A
(Package name: TO-220C•FM)
D
1. Gate
2. Drain
3. Source
G
1 2
Rev.4.00 Sep 07, 2005 page 1 of 7
3
S
2SJ532
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Symbol
VDSS
Value
–60
Unit
V
VGSS
ID
±20
–20
V
A
–80
–20
A
A
ID (pulse)
IDR
Note 1
Note 3
Avalanche current
Avalanche energy
IAP
Note 3
EAR
–20
34
A
mJ
Channel dissipation
Channel temperature
Pch
Tch
Note 2
30
150
W
°C
–55 to +150
°C
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Tstg
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
V (BR) DSS
V (BR) GSS
–60
±20
—
—
—
—
V
V
ID = –10 mA, VGS = 0
IG = ±100 µA, VDS = 0
IDSS
IGSS
—
—
—
—
–10
±10
µA
µA
VDS = –60 V, VGS = 0
VGS = ±16 V, VDS = 0
Gate to source cutoff voltage
Static drain to source on state resistance
VGS (off)
RDS (on)
–1.0
—
—
0.042
–2.0
0.055
V
Ω
ID = –1 mA, VDS = –10 V
Note 4
ID = –10 A, VGS = –10 V
Forward transfer admittance
RDS (on)
|yfs|
—
10
0.065
16
0.095
—
Ω
S
ID = –10 A, VGS = –4 V
Note 4
ID = –10 A, VDS = –10 V
Input capacitance
Output capacitance
Ciss
Coss
—
—
1750
800
—
—
pF
pF
Reverse transfer capacitance
Turn-on delay time
Crss
td (on)
—
—
180
16
—
—
pF
ns
VDS = –10 V
VGS = 0
f = 1 MHz
Rise time
Turn-off delay time
tr
td (off)
—
—
100
230
—
—
ns
ns
VGS = –10 V
ID = –10 A
RL = 3 Ω
Fall time
Body to drain diode forward voltage
tf
VDF
—
—
140
–1.0
—
—
ns
V
IF = –20 A, VGS = 0
trr
—
100
—
ns
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Body to drain diode reverse recovery time
Note:
4. Pulse test
Rev.4.00 Sep 07, 2005 page 2 of 7
Test Conditions
Note 4
IF = –20 A, VGS = 0
diF/dt = 50 A/µs
2SJ532
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
–1000
ID (A)
–300
30
Drain Current
Channel Dissipation
Pch (W)
40
20
10
10 µs
–100
10
0
µ
=1 1 m s
DC
0m s
Op
s(
1s
era
ho
tio
t)
n(
Tc
=
Operation in
25
°C
this area is
)
limited by RDS (on)
PW
–30
–10
–3
–1
–0.3
0
0
50
100
200
150
Case Temperature
Ta = 25°C
–0.1
–0.1 –0.3
–1
Tc (°C)
VDS (V)
VDS = –10 V
Pulse Test
Pulse Test
–6 V
–5 V
–4 V
–40
–30
Drain Current
–30
Drain Current
–100
–50
–4.5 V
–40 –8 V
–30
Typical Transfer Characteristics
ID (A)
ID (A)
–10 V
–10
Drain to Source Voltage
Typical Output Characteristics
–50
–3
–3.5 V
–20
–3 V
–10
–20
–10
VGS = –2.5 V
25°C
Tc = 75°C
–25°C
0
0
–2
–4
–6
0
–10
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2.0
Pulse Test
–1.6
–1.2
ID = –20 A
–0.8
–10 A
–0.4
–5 A
–2 A
0
0
–4
–8
–12
Gate to Source Voltage
Rev.4.00 Sep 07, 2005 page 3 of 7
–16
–20
VGS (V)
0
–1
–2
–3
–4
Gate to Source Voltage
VDS (V)
–5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Static Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Saturation Voltage VDS (on) (V)
Drain to Source Voltage
–8
1
0.5
0.2
0.1
VGS = –4 V
0.05
–10 V
0.02
Pulse Test
0.01
–1
–2
–5
–10 –20
Drain Current
–50 –100
ID (A)
2SJ532
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
vs. Temperature
0.20
Pulse Test
0.16
–5 A
–10 A
ID = –20 A
0.12
VGS = –4 V
0.08
–20 A
0.04
–5 A, –10 A
–10 V
0
–40
0
40
80
Case Temperature
120
160
100
30
Tc = –25°C
10
25°C
3
75°C
1
0.3
VDS = –10 V
Pulse Test
0.1
–0.1
Tc (°C)
–10
–30
–100
10000
Pulse Test
500
Capacitance C (pF)
Reverse Recovery Time trr (ns)
–3
Typical Capacitance vs.
Drain to Source Voltage
1000
200
100
50
–0.3
–1
–3
–10
Reverse Drain Current
–30
3000
1000
Coss
300
100
Crss
10
–100
IDR (A)
VGS
–8
VDS
–60
–12
VDD = –10 V
–25 V
–50 V
–80
–16
ID = –20 A
–100
0
16
32
Gate Charge
Rev.4.00 Sep 07, 2005 page 4 of 7
48
64
Qg (nc)
–10
–20
80
VGS (V)
1000
Switching Time t (ns)
–40
–4
Gate to Source Voltage
–20
0
–20
–30
–40
–50
Switching Characteristics
0
VDD = –10 V
–25 V
–50 V
VGS = 0
f = 1 MHz
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
0
Ciss
30
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
20
10
–0.1
VDS (V)
–1
Drain Current ID (A)
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage
–0.3
VGS = –10 V, VDD = –30 V
PW = 10 µs, duty ≤ 1 %
500
td(off)
200
tf
100
tr
50
td(on)
20
10
–0.1 –0.3
–1
–3
Drain Current
–10
–30
ID (A)
–100
2SJ532
Reverse Drain Current vs.
Source to Drain Voltage
Repetitive Avalanche Energy EAR (mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Reverse Drain Current IDR (A)
–50
–40
–30
–10 V
–20
VGS = 0, 5 V
–5 V
–10
Pulse Test
0
0
–0.4
–0.8
–1.2
–1.6
Source to Drain Voltage
–2.0
50
IAP = –20 A
VDD = –25 V
duty < 0.1 %
Rg ≥ 50 Ω
40
30
20
10
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
VSD (V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
D=1
1
0.5
0.3
0.2
0.1
θch – c (t) = γ s (t) • θch – c
θch – c = 4.17°C/W, Tc = 25°C
0.1
0.05
D=
PDM
0.02
e
1
uls
0.0
tp
o
h
1s
0.03
0.01
10 µ
PW
T
PW
T
100 µ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
VDS
Monitor
Avalanche Waveform
L
EAR =
1
• L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
Rg
V(BR)DSS
IAP
D.U.T
VDD
VDS
ID
Vin
–15 V
50 Ω
0
Rev.4.00 Sep 07, 2005 page 5 of 7
VDD
2SJ532
Switching Time Test Circuit
Waveform
Vin
Vout
Monitor
Vin Monitor
10%
D.U.T.
90%
RL
90%
90%
Vin
–10 V
50 Ω
VDD
= –30 V
Vout
td(on)
Rev.4.00 Sep 07, 2005 page 6 of 7
10%
tr
10%
td(off)
tf
2SJ532
Package Dimensions
RENESAS Code
Package Name
MASS[Typ.]
PRSS0003AE-A
TO-220CFM / TO-220CFMV
1.9g
0.6 ± 0.1
2.54
4.1 ± 0.3
1.0 ± 0.2
1.15 ± 0.2
φ 3.2 ± 0.2
12.0 ± 0.3
10.0 ± 0.3
Unit: mm
4.5 ± 0.3
2.7 ± 0.2
15.0 ± 0.3

2.5 ± 0.2
2.54
13.6 ± 1.0
JEITA Package Code
0.7 ± 0.1
Ordering Information
Part Name
Quantity
Shipping Container
2SJ532-E
50 pcs
Plastic magazine
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.4.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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