STPS8H100 High voltage power Schottky rectifier Main product characteristics Features and benefits

STPS8H100 High voltage power Schottky rectifier Main product characteristics Features and benefits
STPS8H100
High voltage power Schottky rectifier
Main product characteristics
IF(AV)
8A
VRRM
100 V
Tj
175° C
VF(max)
0.58 V
K
A
NC
D2PAK
STPS8H100G
Features and benefits
■
Negligible switching losses
■
High junction temperature capability
■
Low leakage current
■
Good trade off between leakage current and
forward voltage drop
■
Insulated package:
– TO-220FPAC
Insulating voltage = 2000 V DC
Typical package capacitance = 12 pF
■
TO-220AC
STPS8H100D
K
TO-220FPAC
STPS8H100FP
Order Codes
Avalanche capability specified
Description
Schottky barrier rectifier designed for high
frequency compact Switched Mode Power
Supplies such as adaptators and on board
DC/DC converters.
Table 1.
A
A
K
Part Number
Marking
STPS8H100D
STPS8H100D
STPS8H100G
STPS8H100G
STPS8H100G-TR
STPS8H100G
STPS8H100FP
STPS8H100FP
Absolute ratings (limiting values)
Symbol
Parameter
VRRM
Repetitive peak reverse voltage
IF(RMS)
RMS forward voltage
2
TO-220AC, D PAK
TC = 165° C
DO-15
TC = 150° C
Value
Unit
100
V
30
A
8
A
IF(AV)
Average forward current
δ = 0.5
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
250
A
PARM
Repetitive peak avalanche power
tp = 1 µs Tj = 25° C
10800
W
-65 to + 175
°C
175
°C
Tstg
Tj
June 2006
Storage temperature range
Maximum operating junction temperature
Rev 10
1/9
www.st.com
9
Characteristics
STPS8H100
1
Characteristics
Table 2.
Thermal resistance
Symbol
Parameter
Value
TO-220AC, D2PAK
Rth(j-c)
Unit
1.6
Junction to case
° C/W
TO-220FPAC
Table 3.
4
Static electrical characteristics (per diode)
Symbol
Parameter
IR (1)
Tests conditions
Tj = 25° C
Reverse leakage current
Tj = 125° C
Tj = 125° C
Tj = 25° C
Forward voltage drop
Typ
VR = VRRM
Max.
Unit
4.5
µA
6.0
mA
2
0.71
Tj = 25° C
VF (2)
Min.
IF = 8 A
0.56
0.58
0.77
Tj = 125° C
Tj = 25° C
V
IF = 10 A
0.59
0.64
0.81
Tj = 125° C
IF = 16 A
0.65
0.68
1. tp = 5 ms, δ < 2%
2. tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.48 x IF(AV) + 0.0125 IF2(RMS)
Figure 1.
Average forward power
dissipation versus average
forward current
Figure 2.
PARM(tp)
PARM(1µs)
PF(av)(W)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2/9
Normalized avalanche power
derating versus pulse duration
δ = 0.1
δ = 0.2
δ = 0.05
1
δ = 0.5
δ=1
0.1
T
0.01
δ=tp/T
IF(av) (A)
tp
tp(µs)
0.001
0
1
2
3
4
5
6
7
8
9
10
0.01
0.1
1
10
100
1000
STPS8H100
Figure 3.
Characteristics
Normalized avalanche power
derating versus junction
temperature
Figure 4.
Average forward current versus
ambient temperature, δ = 0.5,
(TO-220AC, D2PAK)
IF(av)(A)
PARM(tp)
PARM(25°C)
1.2
10
1
8
Rth(j-a)=Rth(j-c)
0.8
6
0.6
4
0.4
Rth(j-a)=15°C/W
T
2
0.2
Tj(°C)
0
0
25
50
Figure 5.
75
100
125
150
Average forward current versus
ambient temperature, δ = 0.5,
(TO-220FPAC)
tp
20
40
0
Figure 6.
IF(av)(A)
Tamb(°C)
60
80
100
120
140
160
180
Non repetitive surge peak
forward current versus overload
duration - maximum values, per
diode (TO-220AC, D2PAK)
IM(A)
10
160
Rth(j-a)=Rth(j-c)
140
8
120
100
6
Tc=75°C
80
Rth(j-a)=50°C/W
4
60
T
40
2
0
δ=tp/T
0
δ=tp/T
tp
20
40
Figure 7.
IM(A)
100
90
80
70
60
50
40
30
20 IM
10
0
1E-3
20
Tamb(°C)
60
80
100
120
140
160
180
Non repetitive surge peak forward
current versus overload duration
- maximum values (TO-220FPAC)
Tc=100°C
IM
t
0
1E-3
Figure 8.
Tc=125°C
t(s)
δ=0.5
1E-2
1E-1
1E+0
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220AC, D2PAK)
Zth(j-c)/Rth(j-c)
1.0
0.8
Tc=75°C
0.6
δ = 0.5
0.4
Tc=100°C
δ = 0.2
Tc=125°C
0.2
T
δ = 0.1
Single pulse
t
t(s)
δ=0.5
1E-2
1E-1
1E+0
0.0
1E-4
tp(s)
1E-3
1E-2
δ=tp/T
1E-1
tp
1E+0
3/9
Characteristics
Figure 9.
STPS8H100
Relative variation of thermal
Figure 10. Reverse leakage current versus
impedance junction to case versus
reverse voltage applied (typical
pulse duration (TO-220FPAC)
values)
IR(µA)
Zth(j-c)/Rth(j-c)
5E+3
1.0
1E+3
Tj=125°C
0.8
1E+2
δ = 0.5
0.6
1E+1
0.4
δ = 0.2
1E+0
T
Tj=25°C
δ = 0.1
0.2
1E-1
Single pulse
δ=tp/T
tp(s)
0.0
1E-3
1E-2
1E-1
tp
1E+0
1E+1
Figure 11. Junction capacitance versus
reverse voltage applied (typical
values)
1E-2
VR(V)
0
10
20
30
40
50
60
70
80
90 100
Figure 12. Forward voltage drop versus
forward current (maximum values)
IFM(A)
C(pF)
50.0
1000
F=1MHz
Tj=25°C
Tj=125°C
10.0
500
Tj=25°C
1.0
200
100
VFM(V)
VR(V)
1
10
100
Figure 13. Thermal resistance junction to
ambient versus copper surface
under tab - Epoxy printed circuit
board FR4, ecu = 35 µm (D2PAK)
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
0
4/9
S(Cu) (cm²)
0
4
8
12
16
20
24
28
32
36
40
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
STPS8H100
2
Package information
Package information
Epoxy meets UL94, V0.
Table 4.
D2PAK Dimensions
Dimensions
REF.
A
E
C2
L2
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.14
1.70
0.045
0.067
C
0.45
0.60
0.017
0.024
C2
1.23
1.36
0.048
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.40
0.393
0.409
G
4.88
5.28
0.192
0.208
L
15.00
15.85
0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
M
2.40
3.20
0.094
0.126
D
L
L3
A1
B2
R
C
B
G
A2
2.0 MIN.
FLAT ZONE
V2
R
V2
0.40 typ.
0°
0.016 typ.
8°
0°
8°
Figure 14. D2PAK footprint dimensions (in mm)
16.90
10.30
5.08
1.30
3.70
8.90
5/9
Package information
Table 5.
STPS8H100
TO-220AC Dimensions
Dimensions
REF.
A
H2
ØI
C
L5
Millimeters
Inches
Min.
Max.
Min.
Max.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.066
G
4.95
5.15
0.194
0.202
H2
10.00
10.40
0.393
0.409
L7
L6
L2
F1
D
L9
L2
L4
16.40 typ.
0.645 typ.
L4
13.00
14.00
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.259
L9
3.50
3.93
0.137
0.154
F
M
E
G
M
Diam. I
6/9
2.6 typ.
3.75
3.85
0.102 typ.
0.147
0.151
STPS8H100
Package information
Table 6.
TO-220FPAC Dimensions
Dimensions
REF.
A
Dia
L6
L2
L7
L3
L5
F1
D
Min.
Max.
Min.
Max.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.70
0.018
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.70
0.045
0.067
G
4.95
5.20
0.195
0.205
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
L4
F
G
Inches
B
H
G1
Millimeters
E
16 Typ.
0.63 Typ.
L3
28.6
30.6
1.126
1.205
L4
9.8
10.6
0.386
0.417
L5
2.9
3.6
0.114
0.142
L6
15.9
16.4
0.626
0.646
L7
9.00
9.30
0.354
0.366
Dia.
3.00
3.20
0.118
0.126
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
7/9
Ordering information
3
STPS8H100
Ordering information
Ordering type
Marking
Package
Weight
Base qty
Delivery mode
STPS8H100D
STPS8H100D
TO-220AC
1.86 g
50
Tube
STPS8H100FP
STPS8H100FP
TO-220FPAC
1.9 g
50
Tube
STPS8H100G
STPS8H100G
D2PAK
1.48 g
50
Tube
STPS8H100G
D2
1.48 g
500
Tape and reel
STPS8H100G-TR
4
8/9
PAK
Revision history
Date
Revision
Description of Changes
Jul-2003
6D
Last update.
1-June-2006
10
Reformatted to current standard. Added ECOPACK statement.
Changed nF to pF in Figure 11. Revision number set to 10 to align
with on-line versioning.
STPS8H100
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