S29AL016D

S29AL016D
S29AL016D
16 Megabit (2 M x 8-Bit/1 M x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
Data Sheet
PRELIMINARY
Distinctive Characteristics
Architectural Advantages
„ Ultra low power consumption (typical values
at 5 MHz)
„ Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
„ Manufactured on 200nm process technology
— Fully compatible with 0.23 µm Am29LV160D and
MBM29LV160E devices
„ Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirtyone 64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and thirtyone 32 Kword sectors (word mode)
„ Sector Protection features
— A hardware method of locking a sector to prevent any
program or erase operations within that sector
— Sectors can be locked in-system or via programming
equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
„ Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
„ Top or bottom boot block configurations
available
„ Compatibility with JEDEC standards
— Pinout and software compatible with single-power
supply Flash
— 200 nA standby mode current
— 9 mA read current
— 20 mA program/erase current
„ Cycling endurance: 1,000,000 cycles per
sector typical
„ Data retention: 20 years typical
Package Options
„ 48-ball FBGA
„ 48-pin TSOP
„ 44-pin SOP
Software Features
„ CFI (Common Flash Interface) compliant
— Provides device-specific information to the system,
allowing host software to easily reconfigure for
different Flash devices
„ Erase Suspend/Erase Resume
— Suspends an erase operation to read data from, or
program data to, a sector that is not being erased,
then resumes the erase operation
„ Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion
Hardware Features
— Superior inadvertent write protection
„ Ready/Busy# pin (RY/BY#)
Performance Characteristics
— Provides a hardware method of detecting program or
erase cycle completion
„ High performance
— Access times as fast as 70 ns
Publication Number S29AL016D_00
— 200 nA Automatic Sleep mode current
Revision A
Amendment 2
Issue Date December 17, 2004
P r e l i m i n a r y
General Description
The S29AL016D is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152
bytes or 1,048,576 words. The device is offered in 48-ball FBGA, and 48-pin TSOP
packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8)
data appears on DQ7–DQ0. This device is designed to be programmed in-system
with the standard system 3.0 volt VCC supply. A 12.0 V VPP or 5.0 VCC are not
required for write or erase operations. The device can also be programmed in
standard EPROM programmers.
The device offers access times of 70 ns and 90 ns allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has
separate chip enable (CE#), write enable (WE#) and output enable (OE#)
controls.
The device requires only a single 3.0 volt power supply for both read and write
functions. Internally generated and regulated voltages are provided for the program and erase operations.
The S29AL016D is entirely command set compatible with the JEDEC singlepower-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input
to an internal state-machine that controls the erase and programming circuitry.
Write cycles also internally latch addresses and data needed for the programming
and erase operations. Reading data out of the device is similar to reading from
other Flash or EPROM devices.
Device programming occurs by executing the program command sequence. This
initiates the Embedded Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The
Unlock Bypass mode facilitates faster programming times by requiring only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase command sequence. This initiates
the Embedded Erase algorithm—an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase
operation. During erase, the device automatically times the erase pulse widths
and verifies proper cell margin.
The host system can detect whether a program or erase operation is complete by
observing the RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device
is ready to read array data or accept another command.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved in-system or via
programming equipment.
The Erase Suspend/Erase Resume feature enables the user to put erase on
hold for any period of time to read data from, or program data to, any sector that
is not selected for erasure. True background erase can thus be achieved.
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The hardware RESET# pin terminates any operation in progress and resets the
internal state machine to reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also reset the device, enabling
the system microprocessor to read the boot-up firmware from the Flash memory.
The device offers two power-saving features. When addresses have been stable
for a specified amount of time, the device enters the automatic sleep mode.
The system can also place the device into the standby mode. Power consumption is greatly reduced in both these modes.
Spansion’s Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness.
The device electrically erases all bits within a sector simultaneously via
Fo wl e r -Nordheim tunneling. The data is programmed using hot electron
injection.
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S29AL016D
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Table of Contents
General Description . . . . . . . . . . . . . . . . . . . . . . . . 2
Product Selector Guide. . . . . . . . . . . . . . . . . . . . . . 5
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 6
Special Handling Instructions ...............................................................7
Pin Configuration. . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 9
S29AL016D Standard Products ........................................................... 9
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 10
Table 1. S29AL016D Device Bus Operations .........................10
Word/Byte Configuration ...................................................................10
Requirements for Reading Array Data ............................................ 11
Writing Commands/Command Sequences .................................... 11
Program and Erase Operation Status ............................................... 11
Standby Mode ......................................................................................... 12
Automatic Sleep Mode ......................................................................... 12
RESET#: Hardware Reset Pin ............................................................ 12
Output Disable Mode ........................................................................... 13
Table 2. Sector Address Tables (Top Boot Device) .................13
Table 3. Sector Address Tables (Bottom Boot Device) ............14
Autoselect Mode ................................................................................... 14
Table 4. S29AL016D Autoselect Codes (High Voltage Method) .15
Sector Protection/Unprotection ....................................................... 15
Temporary Sector Unprotect ........................................................... 15
DQ2: Toggle Bit II ................................................................................ 32
Reading Toggle Bits DQ6/DQ2 ........................................................ 32
Figure 6. Toggle Bit Algorithm ............................................ 33
DQ5: Exceeded Timing Limits ...........................................................33
DQ3: Sector Erase Timer .................................................................. 34
Table 10. Write Operation Status ....................................... 34
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . 35
Figure 7. Maximum Negative Overshoot Waveform................ 35
Figure 8. Maximum Positive Overshoot Waveform ................. 35
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Industrial (I) Devices ............................................................................ 36
VCC Supply Voltages ............................................................................ 36
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 37
CMOS Compatible ................................................................................37
Zero Power Flash ................................................................................. 38
Figure 9. ICC1 Current vs. Time (Showing Active and
Automatic Sleep Currents) ................................................. 38
Figure 10. Typical ICC1 vs. Frequency .................................. 38
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 11. Test Setup ........................................................ 39
Table 11. Test Specifications ............................................. 39
Key to Switching Waveforms ...........................................................40
Figure 12. Input Waveforms and Measurement Levels............ 40
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 41
Read Operations .................................................................................... 41
Figure 13. Read Operations Timings .................................... 41
Figure 1. Temporary Sector Unprotect Operation................... 16
Figure 2. In-System Sector Protect/Unprotect Algorithms ....... 17
Hardware Reset (RESET#) ................................................................ 42
Common Flash Memory Interface (CFI) . . . . . . . 18
Word/Byte Configuration (BYTE#) ................................................ 43
Table 5. CFI Query Identification String ...............................18
Table 6. System Interface String .........................................19
Table 7. Device Geometry Definition ....................................19
Table 8. Primary Vendor-Specific Extended Query .................20
Figure 15. BYTE# Timings for Read Operations ..................... 43
Figure 16. BYTE# Timings for Write Operations..................... 44
Hardware Data Protection ................................................................20
Low VCC Write Inhibit .......................................................................20
Write Pulse “Glitch” Protection ......................................................20
Logical Inhibit .......................................................................................... 21
Power-Up Write Inhibit ...................................................................... 21
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 22
Reading Array Data ............................................................................. 22
Reset Command ................................................................................... 22
Autoselect Command Sequence ...................................................... 23
Word/Byte Program Command Sequence ................................... 23
Unlock Bypass Command Sequence ............................................... 24
Figure 3. Program Operation .............................................. 24
Chip Erase Command Sequence ...................................................... 25
Sector Erase Command Sequence .................................................. 25
Erase Suspend/Erase Resume Commands .................................... 26
Figure 4. Erase Operation .................................................. 27
Command Definitions ......................................................................... 28
Table 9. S29AL016D Command Definitions ...........................28
Write Operation Status . . . . . . . . . . . . . . . . . . . . 29
DQ7: Data# Polling .............................................................................. 29
Figure 5. Data# Polling Algorithm ....................................... 30
RY/BY#: Ready/Busy# ......................................................................... 30
DQ6: Toggle Bit I ................................................................................... 31
4
Figure 14. RESET# Timings ................................................ 42
Erase/Program Operations ................................................................ 45
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 46
Figure 17. Program Operation Timings ................................. 46
Figure 18. Chip/Sector Erase Operation Timings.................... 47
Figure 19. Data# Polling Timings (During Embedded
Algorithms)...................................................................... 48
Figure 20. Toggle Bit Timings (During Embedded Algorithms) . 48
Figure 21. DQ2 vs. DQ6 for Erase and Erase Suspend
Operations ....................................................................... 49
Temporary Sector Unprotect .......................................................... 49
Figure 22. Temporary Sector Unprotect/Timing Diagram ........ 49
Figure 23. Sector Protect/Unprotect Timing Diagram.............. 50
Alternate CE# Controlled Erase/Program Operations ............. 51
Figure 24. Alternate CE# Controlled Write Operation Timings.. 52
Erase and Programming Performance . . . . . . . . 53
TSOP and BGA Pin Capacitance . . . . . . . . . . . . . 53
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . . 54
TS 048—48-Pin Standard TSOP ...................................................... 54
VBK048—48-Ball Fine-Pitch Ball Grid Array (FBGA)
8.15 mm x 6.15 mm ................................................................................ 56
SO044—44-Pin Small Outline Package (SOP)
28.20 mm x 13.30 mm . . . . . . . . . . . . . . . . . . . . . . . 57
Revision Summary. . . . . . . . . . . . . . . . . . . . . . . . . 58
Revision A (May 4, 2004) ................................................................... 58
Revision A1 (July 28, 2004) ................................................................. 58
Revision A2 (December 17, 2004) ................................................... 58
S29AL016D
S29AL016D_00_A2 December 17, 2004
P r e l i m i n a r y
Product Selector Guide
Family Part Number
Speed Option
S29AL016D
Voltage Range: VCC = 2.7–3.6 V
70
90
Max access time, ns (tACC)
70
90
Max CE# access time, ns (tCE)
70
90
Max OE# access time, ns (tOE)
30
35
Note: See AC Characteristics for full specifications.
Block Diagram
DQ0–DQ15 (A-1)
RY/BY#
VCC
Sector Switches
VSS
Erase Voltage
Generator
RESET#
WE#
BYTE#
Input/Output
Buffers
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
VCC Detector
Address Latch
STB
Timer
A0–A19
December 17, 2004 S29AL016D_00_A2
S29AL016D
STB
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
5
P r e l i m i n a r y
Connection Diagrams
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE#
RESET#
NC
NC
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
RESET#
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE#
VSS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
DQ3
DQ11
6
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
Standard TSOP
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Standard SOP
S29AL016D
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
WE#
A19
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
S29AL016D_00_A2 December 17, 2004
P r e l i m i n a r y
Connection Diagrams
FBGA
Top View, Balls Facing Down
A6
B6
C6
D6
E6
F6
G6
A13
A12
A14
A15
A16
A5
B5
C5
D5
E5
F5
G5
H5
A9
A8
A10
A11
DQ7
DQ14
DQ13
DQ6
A4
B4
C4
D4
E4
F4
G4
H4
WE#
RESET#
NC
A19
DQ5
DQ12
VCC
DQ4
A3
B3
C3
D3
E3
F3
G3
H3
RY/BY#
NC
A18
NC
DQ2
DQ10
DQ11
DQ3
A2
B2
C2
D2
E2
F2
G2
H2
A7
A17
A6
A5
DQ0
DQ8
DQ9
DQ1
A1
B1
C1
D1
E1
F1
G1
H1
A3
A4
A2
A1
A0
CE#
OE#
VSS
BYTE# DQ15/A-1
H6
VSS
Special Handling Instructions
Special handling is required for Flash Memory products in FBGA packages.
Flash memory devices in FBGA packages may be damaged if exposed to ultrasonic cleaning methods. The package and/or data integrity may be compromised
if the package body is exposed to temperatures above 150°C for prolonged periods of time.
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Pin Configuration
A0–A19
=
20 addresses
DQ0–DQ14
=
15 data inputs/outputs
DQ15/A-1
=
DQ15 (data input/output, word mode),
A-1 (LSB address input, byte mode)
BYTE#
=
Selects 8-bit or 16-bit mode
CE#
=
Chip enable
OE#
=
Output enable
WE#
=
Write enable
RESET#
=
Hardware reset pin
RY/BY#
=
Ready/Busy output
VCC
=
3.0 volt-only single power supply
(see Product Selector Guide for speed
options and voltage supply tolerances)
VSS
=
Device ground
NC
=
Pin not connected internally
Logic Symbol
20
A0–A19
16 or 8
DQ0–DQ15
(A-1)
CE#
OE#
WE#
RESET#
BYTE#
8
RY/BY#
S29AL016D
S29AL016D_00_A2 December 17, 2004
P r e l i m i n a r y
Ordering Information
S29AL016D Standard Products
Spansion standard products are available in several packages and operating
ranges. The order number (Valid Combination) is formed by a combination of the
elements below.
S29AL016D
70
T
A
I
01
0
PACKING TYPE
0
3
= Tray
= 13” Tape and Reel
MODEL NUMBER
01
02
= VCC = 2.7 - 3.6V, top boot sector device
= VCC = 2.7 - 3.6V, bottom boot sector device
TEMPERATURE RANGE
I
= Industrial (–40°C to +85°C)
PACKAGE MATERIAL SET
A
F
= Standard
= Pb-Free
PACKAGE TYPE
T
B
M
= Thin Small Outline Package (TSOP) Standard Pinout
= Fine-pitch Ball-Grid Array Package
= Small Outline Package (SOP) Standard Pinout
SPEED OPTION
70
90
= 70 ns Access Speed
= 90 ns Access Speed
DEVICE NUMBER/DESCRIPTION
S29AL016D
16 Megabit Flash Memory manufactured using 200 nm process technology
3.0 Volt-only Read, Program, and Erase
S29AL016D Valid Combinations
Device
Number
Speed
Option
Package Type,
Material, and
Temperature Range
Model
Number
Packing
Type
01, 02
0, 2, 3
(Note 1)
TAI, TFI
S29AL016D
70, 90
BAI, BFI
MAI, MFI
Package
Description
TS048 (Note 2)
TSOP
VBK048 (Note 3)
Fine-Pitch BGA
SO044 (Note 2)
SOP
Notes:
1. Type 0 is standard. Specify other options as required.
2. TSOP and SOP package markings omit packing type designator from ordering part number.
3. BGA package marking omits leading “S29” and packing type designator from ordering part number.
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult your
local sales office to confirm availability of specific valid combinations and to check on newly released
combinations.
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Device Bus Operations
This section describes the requirements and use of the device bus operations,
which are initiated through the internal command register. The command register
itself does not occupy any addressable memory location. The register is composed of latches that store the commands, along with the address and data
information needed to execute the command. The contents of the register serve
as inputs to the internal state machine. The state machine outputs dictate the
function of the device. Table 1 lists the device bus operations, the inputs and control levels they require, and the resulting output. The following subsections
describe each of these operations in further detail.
Table 1.
S29AL016D Device Bus Operations
DQ8–DQ15
Operation
CE#
OE# WE# RESET#
Addresses
(Note 1)
DQ0–
DQ7
BYTE#
= VIH
BYTE#
= VIL
Read
L
L
H
H
AIN
DOUT
DOUT
Write
L
H
L
H
AIN
DIN
DIN
DQ8–DQ14 = High-Z,
DQ15 = A-1
VCC ±
0.3 V
X
X
VCC ±
0.3 V
X
High-Z
High-Z
High-Z
Output Disable
L
H
H
H
X
High-Z
High-Z
High-Z
Reset
X
X
X
L
X
High-Z
High-Z
High-Z
Sector Protect (Note 2)
L
H
L
VID
Sector Address,
A6 = L, A1 = H,
A0 = L
DIN
X
X
Sector Unprotect (Note 2)
L
H
L
VID
Sector Address,
A6 = H, A1 = H,
A0 = L
DIN
X
X
Temporary Sector
Unprotect
X
X
X
VID
AIN
DIN
DIN
High-Z
Standby
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT
= Data Out
Notes:
1. Addresses are A19:A0 in word mode (BYTE# = VIH), A19:A-1 in byte mode (BYTE# = VIL).
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the
“Sector Protection/Unprotection” section.
Word/Byte Configuration
The BYTE# pin controls whether the device data I/O pins DQ15–DQ0 operate in
the byte or word configuration. If the BYTE# pin is set at logic ‘1’, the device is in
word configuration, DQ15–DQ0 are active and controlled by CE# and OE#.
If the BYTE# pin is set at logic ‘0’, the device is in byte configuration, and only
data I/O pins DQ0–DQ7 are active and controlled by CE# and OE#. The data I/
O pins DQ8–DQ14 are tri-stated, and the DQ15 pin is used as an input for the
LSB (A-1) address function.
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Requirements for Reading Array Data
To read array data from the outputs, the system must drive the CE# and OE# pins
to VIL. CE# is the power control and selects the device. OE# is the output control
and gates array data to the output pins. WE# should remain at VIH. The BYTE#
pin determines whether the device outputs array data in words or bytes.
The internal state machine is set for reading array data upon device power-up,
or after a hardware reset. This ensures that no spurious alteration of the memory content occurs during the power transition. No command is necessary in
this mode to obtain array data. Standard microprocessor read cycles that assert valid addresses on the device address inputs produce valid data on the
device data outputs. The device remains enabled for read access until the command register contents are altered.
See Reading Array Data for more information. Refer to the AC Read Operations
table for timing specifications and to Figure 13 for the timing diagram. ICC1 in the
DC Characteristics table represents the active current specification for reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data
to the device and erasing sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
For program operations, the BYTE# pin determines whether the device accepts
program data in bytes or words. See Word/Byte Configuration for more
information.
The device features an Unlock Bypass mode to facilitate faster programming.
Once the device enters the Unlock Bypass mode, only two write cycles are required to program a word or byte, instead of four. Word/Byte Program Command
Sequence has details on programming data to the device using both standard and
Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device.
Tables 2 and 3 indicate the address space that each sector occupies. A “sector
address” consists of the address bits required to uniquely select a sector. The
Command Definitions section has details on erasing a sector or the entire chip,
or suspending/resuming the erase operation.
After the system writes the autoselect command sequence, the device enters the
autoselect mode. The system can then read autoselect codes from the internal
register (which is separate from the memory array) on DQ7–DQ0. Standard read
cycle timings apply in this mode. Refer to the Autoselect Mode and Autoselect
Command Sequence sections for more information.
ICC2 in the DC Characteristics table represents the active current specification for
the write mode. The AC Characteristics section contains timing specification tables and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may check the status of the
operation by reading the status bits on DQ7–DQ0. Standard read cycle timings
and ICC read specifications apply. Refer to Write Operation Status for more information, and to AC Characteristics for timing diagrams.
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Standby Mode
When the system is not reading or writing to the device, it can place the device
in the standby mode. In this mode, current consumption is greatly reduced, and
the outputs are placed in the high impedance state, independent of the OE#
input.
The device enters the CMOS standby mode when the CE# and RESET# pins are
both held at VCC ± 0.3 V. (Note that this is a more restricted voltage range than
VIH.) If CE# and RESET# are held at VIH, but not within VCC ± 0.3 V, the device
will be in the standby mode, but the standby current will be greater. The device
requires standard access time (tCE) for read access when the device is in either
of these standby modes, before it is ready to read data.
If the device is deselected during erasure or programming, the device draws active current until the operation is completed.
In the DC Characteristics table, ICC3 and ICC4 represents the standby current
specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device energy consumption. The device automatically enables this mode when addresses remain stable for tACC + 30
ns. The automatic sleep mode is independent of the CE#, WE#, and OE# control
signals. Standard address access timings provide new data when addresses are
changed. While in sleep mode, output data is latched and always available to the
system. ICC4 in the DC Characteristics table represents the automatic sleep mode
current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading
array data. When the system drives the RESET# pin to VIL for at least a period of
tRP, the device immediately terminates any operation in progress, tristates all
data output pins, and ignores all read/write attempts for the duration of the RESET# pulse. The device also resets the internal state machine to reading array
data. The operation that was interrupted should be reinitiated once the device is
ready to accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET# pulse. When RESET# is held
at VSS±0.3 V, the device draws CMOS standby current (ICC4). If RESET# is held
at VIL but not within VSS±0.3 V, the standby current will be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would
thus also reset the Flash memory, enabling the system to read the boot-up firmware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the internal reset operation is complete, which requires
a time of tREADY (during Embedded Algorithms). The system can thus monitor RY/
BY# to determine whether the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing (RY/BY# pin is “1”), the reset
operation is completed within a time of tREADY (not during Embedded Algorithms).
The system can read data tRH after the RESET# pin returns to VIH.
Refer to the AC Characteristics tables for RESET# parameters and to Figure 14
for the timing diagram.
12
S29AL016D
S29AL016D_00_A2 December 17, 2004
P r e l i m i n a r y
Output Disable Mode
When the OE# input is at VIH, output from the device is disabled. The output pins
are placed in the high impedance state.
Table 2.
Sector Address Tables (Top Boot Device)
Sector
A19
A18
A17
A16
A15
A14
A13
A12
Sector Size
(Kbytes/
Kwords)
Byte Mode (x8)
Address Range (in hexadecimal)
Word Mode (x16)
SA0
0
0
0
0
0
X
X
X
64/32
000000–00FFFF
00000–07FFF
SA1
0
0
0
0
1
X
X
X
64/32
010000–01FFFF
08000–0FFFF
SA2
0
0
0
1
0
X
X
X
64/32
020000–02FFFF
10000–17FFF
SA3
0
0
0
1
1
X
X
X
64/32
030000–03FFFF
18000–1FFFF
SA4
0
0
1
0
0
X
X
X
64/32
040000–04FFFF
20000–27FFF
SA5
0
0
1
0
1
X
X
X
64/32
050000–05FFFF
28000–2FFFF
SA6
0
0
1
1
0
X
X
X
64/32
060000–06FFFF
30000–37FFF
SA7
0
0
1
1
1
X
X
X
64/32
070000–07FFFF
38000–3FFFF
SA8
0
1
0
0
0
X
X
X
64/32
080000–08FFFF
40000–47FFF
SA9
0
1
0
0
1
X
X
X
64/32
090000–09FFFF
48000–4FFFF
SA10
0
1
0
1
0
X
X
X
64/32
0A0000–0AFFFF
50000–57FFF
SA11
0
1
0
1
1
X
X
X
64/32
0B0000–0BFFFF
58000–5FFFF
SA12
0
1
1
0
0
X
X
X
64/32
0C0000–0CFFFF
60000–67FFF
SA13
0
1
1
0
1
X
X
X
64/32
0D0000–0DFFFF
68000–6FFFF
SA14
0
1
1
1
0
X
X
X
64/32
0E0000–0EFFFF
70000–77FFF
SA15
0
1
1
1
1
X
X
X
64/32
0F0000–0FFFFF
78000–7FFFF
SA16
1
0
0
0
0
X
X
X
64/32
100000–10FFFF
80000–87FFF
SA17
1
0
0
0
1
X
X
X
64/32
110000–11FFFF
88000–8FFFF
SA18
1
0
0
1
0
X
X
X
64/32
120000–12FFFF
90000–97FFF
SA19
1
0
0
1
1
X
X
X
64/32
130000–13FFFF
98000–9FFFF
SA20
1
0
1
0
0
X
X
X
64/32
140000–14FFFF
A0000–A7FFF
SA21
1
0
1
0
1
X
X
X
64/32
150000–15FFFF
A8000–AFFFF
SA22
1
0
1
1
0
X
X
X
64/32
160000–16FFFF
B0000–B7FFF
SA23
1
0
1
1
1
X
X
X
64/32
170000–17FFFF
B8000–BFFFF
SA24
1
1
0
0
0
X
X
X
64/32
180000–18FFFF
C0000–C7FFF
SA25
1
1
0
0
1
X
X
X
64/32
190000–19FFFF
C8000–CFFFF
SA26
1
1
0
1
0
X
X
X
64/32
1A0000–1AFFFF
D0000–D7FFF
SA27
1
1
0
1
1
X
X
X
64/32
1B0000–1BFFFF
D8000–DFFFF
SA28
1
1
1
0
0
X
X
X
64/32
1C0000–1CFFFF
E0000–E7FFF
SA29
1
1
1
0
1
X
X
X
64/32
1D0000–1DFFFF
E8000–EFFFF
SA30
1
1
1
1
0
X
X
X
64/32
1E0000–1EFFFF
F0000–F7FFF
SA31
1
1
1
1
1
0
X
X
32/16
1F0000–1F7FFF
F8000–FBFFF
SA32
1
1
1
1
1
1
0
0
8/4
1F8000–1F9FFF
FC000–FCFFF
SA33
1
1
1
1
1
1
0
1
8/4
1FA000–1FBFFF
FD000–FDFFF
SA34
1
1
1
1
1
1
1
X
16/8
1FC000–1FFFFF
FE000–FFFFF
Note: Address range is A19:A-1 in byte mode and A19:A0 in word mode. See “Word/Byte Configuration” section.
December 17, 2004 S29AL016D_00_A2
S29AL016D
13
P r e l i m i n a r y
Table 3.
Sector Address Tables (Bottom Boot Device)
Sector
A19
A18
A17
A16
A15
A14
A13
A12
Sector Size
(Kbytes/
Kwords)
Byte Mode (x8)
Address Range (in hexadecimal)
Word Mode (x16)
SA0
0
0
0
0
0
0
0
X
16/8
000000–003FFF
00000–01FFF
SA1
0
0
0
0
0
0
1
0
8/4
004000–005FFF
02000–02FFF
SA2
0
0
0
0
0
0
1
1
8/4
006000–007FFF
03000–03FFF
SA3
0
0
0
0
0
1
X
X
32/16
008000–00FFFF
04000–07FFF
SA4
0
0
0
0
1
X
X
X
64/32
010000–01FFFF
08000–0FFFF
SA5
0
0
0
1
0
X
X
X
64/32
020000–02FFFF
10000–17FFF
SA6
0
0
0
1
1
X
X
X
64/32
030000–03FFFF
18000–1FFFF
SA7
0
0
1
0
0
X
X
X
64/32
040000–04FFFF
20000–27FFF
SA8
0
0
1
0
1
X
X
X
64/32
050000–05FFFF
28000–2FFFF
SA9
0
0
1
1
0
X
X
X
64/32
060000–06FFFF
30000–37FFF
SA10
0
0
1
1
1
X
X
X
64/32
070000–07FFFF
38000–3FFFF
SA11
0
1
0
0
0
X
X
X
64/32
080000–08FFFF
40000–47FFF
SA12
0
1
0
0
1
X
X
X
64/32
090000–09FFFF
48000–4FFFF
SA13
0
1
0
1
0
X
X
X
64/32
0A0000–0AFFFF
50000–57FFF
SA14
0
1
0
1
1
X
X
X
64/32
0B0000–0BFFFF
58000–5FFFF
SA15
0
1
1
0
0
X
X
X
64/32
0C0000–0CFFFF
60000–67FFF
SA16
0
1
1
0
1
X
X
X
64/32
0D0000–0DFFFF
68000–6FFFF
SA17
0
1
1
1
0
X
X
X
64/32
0E0000–0EFFFF
70000–77FFF
SA18
0
1
1
1
1
X
X
X
64/32
0F0000–0FFFFF
78000–7FFFF
SA19
1
0
0
0
0
X
X
X
64/32
100000–10FFFF
80000–87FFF
SA20
1
0
0
0
1
X
X
X
64/32
110000–11FFFF
88000–8FFFF
SA21
1
0
0
1
0
X
X
X
64/32
120000–12FFFF
90000–97FFF
SA22
1
0
0
1
1
X
X
X
64/32
130000–13FFFF
98000–9FFFF
SA23
1
0
1
0
0
X
X
X
64/32
140000–14FFFF
A0000–A7FFF
SA24
1
0
1
0
1
X
X
X
64/32
150000–15FFFF
A8000–AFFFF
SA25
1
0
1
1
0
X
X
X
64/32
160000–16FFFF
B0000–B7FFF
SA26
1
0
1
1
1
X
X
X
64/32
170000–17FFFF
B8000–BFFFF
SA27
1
1
0
0
0
X
X
X
64/32
180000–18FFFF
C0000–C7FFF
SA28
1
1
0
0
1
X
X
X
64/32
190000–19FFFF
C8000–CFFFF
SA29
1
1
0
1
0
X
X
X
64/32
1A0000–1AFFFF
D0000–D7FFF
SA30
1
1
0
1
1
X
X
X
64/32
1B0000–1BFFFF
D8000–DFFFF
SA31
1
1
1
0
0
X
X
X
64/32
1C0000–1CFFFF
E0000–E7FFF
SA32
1
1
1
0
1
X
X
X
64/32
1D0000–1DFFFF
E8000–EFFFF
SA33
1
1
1
1
0
X
X
X
64/32
1E0000–1EFFFF
F0000–F7FFF
SA34
1
1
1
1
1
X
X
X
64/32
1F0000–1FFFFF
F8000–FFFFF
Note: Address range is A19:A-1 in byte mode and A19:A0 in word mode. See the “Word/Byte Configuration” section.
Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector
protection verification, through identifier codes output on DQ7–DQ0. This mode
is primarily intended for programming equipment to automatically match a device
to be programmed with its corresponding programming algorithm. However, the
autoselect codes can also be accessed in-system through the command register.
When using programming equipment, the autoselect mode requires VID (11.5 V
to 12.5 V) on address pin A9. Address pins A6, A1, and A0 must be as shown in
Table 4. In addition, when verifying sector protection, the sector address must
appear on the appropriate highest order address bits (see Table 2 and Table 3).
Table 4 shows the remaining address bits that are don’t care. When all necessary
bits have been set as required, the programming equipment may then read the
corresponding identifier code on DQ7-DQ0.
14
S29AL016D
S29AL016D_00_A2 December 17, 2004
P r e l i m i n a r y
To access the autoselect codes in-system, the host system can issue the autoselect command via the command register, as shown in Table 9. This method does
not require VID. See Command Definitions for details on using the autoselect
mode.
Table 4.
Description
Mode
Manufacturer ID: Spansion
S29AL016D Autoselect Codes (High Voltage Method)
CE#
OE#
WE#
A19
to
A12
A11
to
A10
A9
A8
to
A7
A6
A5
to
A4
A3
to
A2
A1
A0
DQ8
to
DQ15
DQ7
to
DQ0
L
L
H
X
X
VID
X
L
X
L
L
L
X
01h
X
X
VID
X
L
X
L
L
H
22h
C4h
X
C4h
X
X
VID
X
L
X
L
L
H
22h
49h
X
49h
SA
X
VID
X
L
X
L
H
L
X
01h (protected)
X
00h (unprotected)
Device ID:
S29AL016D
(Top Boot Block)
Word
L
L
H
Byte
L
L
H
Device ID:
S29AL016D
(Bottom Boot Block)
Word
L
L
H
Byte
L
L
H
L
L
H
Sector Protection Verification
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
Note: The autoselect codes may also be accessed in-system via command sequences. See Table 9.
Sector Protection/Unprotection
The hardware sector protection feature disables both program and erase operations in any sector. The hardware sector unprotection feature re-enables both
program and erase operations in previously protected sectors.
The device is shipped with all sectors unprotected. Spansion offers the option of
programming and protecting sectors at its factory prior to shipping the device
through Spansion’s ExpressFlash™ Service. Contact a Spansion representative
for details.
It is possible to determine whether a sector is protected or unprotected. See Autoselect Mode for details.
Sector protection/unprotection can be implemented via two methods.
The primary method requires VID on the RESET# pin only, and can be implemented either in-system or via programming equipment. Figure 2 shows the
algorithms and Figure 23 shows the timing diagram. This method uses standard
microprocessor bus cycle timing. For sector unprotect, all unprotected sectors
must first be protected prior to the first sector unprotect write cycle.
The alternate method intended only for programming equipment requires VID on
address pin A9 and OE#. This method is compatible with programmer routines
written for earlier 3.0 volt-only Spansion flash devices. Details on this method are
provided in a supplement, publication number 21468. Contact a Spansion representative to request a copy.
Temporary Sector Unprotect
This feature allows temporary unprotection of previously protected sectors to
change data in-system. The Sector Unprotect mode is activated by setting the
RESET# pin to VID. During this mode, formerly protected sectors can be programmed or erased by selecting the sector addresses. Once VID is removed from
the RESET# pin, all the previously protected sectors are protected again. shows
the algorithm, and Figure 22 shows the timing diagrams, for this feature.
December 17, 2004 S29AL016D_00_A2
S29AL016D
15
P r e l i m i n a r y
START
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)
Notes:
1. All protected sectors unprotected.
2. All previously protected sectors are protected once
again.
Figure 1.
16
Temporary Sector Unprotect Operation
S29AL016D
S29AL016D_00_A2 December 17, 2004
P r e l i m i n a r y
START
START
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
PLSCNT = 1
RESET# = VID
Wait 1 µs
Temporary Sector
Unprotect Mode
No
PLSCNT = 1
RESET# = VID
Wait 1 µs
No
First Write
Cycle = 60h?
First Write
Cycle = 60h?
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Wait 150 µs
Increment
PLSCNT
Temporary Sector
Unprotect Mode
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
A1 = 1, A0 = 0
Reset
PLSCNT = 1
Wait 15 ms
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Increment
PLSCNT
No
No
PLSCNT
= 25?
Yes
Yes
No
Yes
Device failed
Read from
sector address
with A6 = 1,
A1 = 1, A0 = 0
Data = 01h?
PLSCNT
= 1000?
Protect another
sector?
No
Data = 00h?
Yes
Yes
Remove VID
from RESET#
Device failed
Last sector
verified?
Write reset
command
Sector Protect
Algorithm
Sector Protect
complete
Set up
next sector
address
No
No
Yes
Sector Unprotect
Algorithm
Remove VID
from RESET#
Write reset
command
Sector Unprotect
complete
Figure 2.
December 17, 2004 S29AL016D_00_A2
In-System Sector Protect/Unprotect Algorithms
S29AL016D
17
P r e l i m i n a r y
Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system
software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can
then be device-independent, JEDEC ID-independent, and forward- and backward-compatible for the specified flash device families. Flash vendors can
standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query
command, 98h, to address 55h in word mode (or address AAh in byte mode), any
time the device is ready to read array data. The system can read CFI information
at the addresses given in Tables 5–8. In word mode, the upper address bits (A7–
MSB) must be all zeros. To terminate reading CFI data, the system must write
the reset command.
The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 5–8. The system must write the reset
command to return the device to the autoselect mode.
For further information, please refer to the CFI Specification and CFI Publication
100, available via the World Wide Web at http://www.amd.com/products/nvd/
overview/cfi.html. Alternatively, contact a Spansion representative for copies of
these documents.
Table 5.
CFI Query Identification String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table (00h = none exists)
18
Description
S29AL016D
S29AL016D_00_A2 December 17, 2004
P r e l i m i n a r y
Table 6.
System Interface String
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
1Bh
36h
0027h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
VPP Min. voltage (00h = no VPP pin present)
1Eh
3Ch
0000h
VPP Max. voltage (00h = no VPP pin present)
1Fh
3Eh
0004h
Typical timeout per single byte/word write 2N µs
20h
40h
0000h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2N ms
22h
44h
0000h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
46h
0005h
Max. timeout for byte/word write 2N times typical
24h
48h
0000h
Max. timeout for buffer write 2N times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2N times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2N times typical (00h = not supported)
Table 7.
Description
Device Geometry Definition
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
27h
4Eh
0015h
Device Size = 2 byte
28h
29h
50h
52h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
54h
56h
0000h
0000h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
58h
0004h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
5Ah
5Ch
5Eh
60h
0000h
0000h
0040h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
62h
64h
66h
68h
0001h
0000h
0020h
0000h
Erase Block Region 2 Information
35h
36h
37h
38h
6Ah
6Ch
6Eh
70h
0000h
0000h
0080h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
72h
74h
76h
78h
001Eh
0000h
0000h
0001h
Erase Block Region 4 Information
December 17, 2004 S29AL016D_00_A2
Description
N
S29AL016D
19
P r e l i m i n a r y
Table 8.
Primary Vendor-Specific Extended Query
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
40h
41h
42h
80h
82h
84h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
86h
0031h
Major version number, ASCII
44h
88h
0030h
Minor version number, ASCII
45h
8Ah
0000h
Address Sensitive Unlock
0 = Required, 1 = Not Required
46h
8Ch
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
8Eh
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
90h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
92h
0004h
Sector Protect/Unprotect scheme
01 = 29F040 mode, 02 = 29F016 mode,
03 = 29F400 mode, 04 = 29LV800A mode
4Ah
94h
0000h
Simultaneous Operation
00 = Not Supported, 01 = Supported
4Bh
96h
0000h
Burst Mode Type
00 = Not Supported, 01 = Supported
4Ch
98h
0000h
Page Mode Type
00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page
Description
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing
provides data protection against inadvertent writes (refer to Table 9 for command
definitions). In addition, the following hardware data protection measures prevent accidental erasure or programming, which might otherwise be caused by
spurious system level signals during VCC power-up and power-down transitions,
or from system noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC power-up and power-down. The command register and all
internal program/erase circuits are disabled, and the device resets. Subsequent
writes are ignored until VCC is greater than VLKO. The system must provide the
proper signals to the control pins to prevent unintentional writes when VCC is
greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write
cycle.
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Logical Inhibit
Write cycles are inhibited by holding any one of OE# = VIL, CE# = VIH or WE# =
VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power up, the device does not accept
commands on the rising edge of WE#. The internal state machine is automatically
reset to reading array data on power-up.
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Command Definitions
Writing specific address and data commands or sequences into the command
register initiates device operations. Table 9 defines the valid register command
sequences. Writing incorrect address and data values or writing them in the
improper sequence resets the device to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens
later. All data is latched on the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in the AC Characteristics section.
Reading Array Data
The device is automatically set to reading array data after device power-up. No
commands are required to retrieve data. The device is also ready to read array
data after completing an Embedded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the Erase
Suspend mode. The system can read array data using the standard read timings,
except that if it reads at an address within erase-suspended sectors, the device
outputs status data. After completing a programming operation in the Erase Suspend mode, the system may once again read array data with the same exception.
See Erase Suspend/Erase Resume Commands for more information on this mode.
The system must issue the reset command to re-enable the device for reading
array data if DQ5 goes high, or while in the autoselect mode. See the Reset Command section, next.
See also Requirements for Reading Array Data in the Device Bus Operations section for more information. The Read Operations table provides the read
parameters, and Figure 13 shows the timing diagram.
Reset Command
Writing the reset command to the device resets the device to reading array data.
Address bits are don’t care for this command.
The reset command may be written between the sequence cycles in an erase
command sequence before erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the sequence cycles in a program
command sequence before programming begins. This resets the device to reading array data (also applies to programming in Erase Suspend mode). Once
programming begins, however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in an autoselect
command sequence. Once in the autoselect mode, the reset command must be
written to return to reading array data (also applies to autoselect during Erase
Suspend).
If DQ5 goes high during a program or erase operation, writing the reset command
returns the device to reading array data (also applies during Erase Suspend).
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Autoselect Command Sequence
The autoselect command sequence allows the host system to access the manufacturer and devices codes, and determine whether or not a sector is protected.
Table 9 shows the address and data requirements. This method is an alternative
to that shown in Table 4, which is intended for PROM programmers and requires
VID on address bit A9.
The autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. The device then enters the autoselect mode,
and the system may read at any address any number of times, without initiating
another command sequence.
A read cycle at address XX00h retrieves the manufacturer code. A read cycle at
address XX01h returns the device code. A read cycle containing a sector address
(SA) and the address 02h in word mode (or 04h in byte mode) returns 01h if that
sector is protected, or 00h if it is unprotected. Refer to Tables 2 and 3 for valid
sector addresses.
The system must write the reset command to exit the autoselect mode and return
to reading array data.
Word/Byte Program Command Sequence
The system may program the device by word or byte, depending on the state of
the BYTE# pin. Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two unlock write cycles, followed by the
program set-up command. The program address and data are written next, which
in turn initiate the Embedded Program algorithm. The system is not required to
provide further controls or timings. The device automatically generates the program pulses and verifies the programmed cell margin. Table 9 shows the address
and data requirements for the byte program command sequence.
When the Embedded Program algorithm is complete, the device then returns to
reading array data and addresses are no longer latched. The system can determine the status of the program operation by using DQ7, DQ6, or RY/BY#. See
Write Operation Status for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm
are ignored. Note that a hardware reset immediately terminates the programming operation. The Byte Program command sequence should be reinitiated once
the device has reset to reading array data, to ensure data integrity.
Programming is allowed in any sequence and across sector boundaries. A bit
cannot be programmed from a “0” back to a “1”. Attempting to do so may
halt the operation and set DQ5 to “1,” or cause the Data# Polling algorithm to
indicate the operation was successful. However, a succeeding read will show that
the data is still “0”. Only erase operations can convert a “0” to a “1”.
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Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program bytes or words to the
device faster than using the standard program command sequence. The unlock
bypass command sequence is initiated by first writing two unlock cycles. This is
followed by a third write cycle containing the unlock bypass command, 20h. The
device then enters the unlock bypass mode. A two-cycle unlock bypass program
command sequence is all that is required to program in this mode. The first cycle
in this sequence contains the unlock bypass program command, A0h; the second
cycle contains the program address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial two unlock cycles required
in the standard program command sequence, resulting in faster total programming time. Table 9 shows the requirements for the command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence. The first cycle
must contain the data 90h; the second cycle the data 00h. Addresses are don’t
care for both cycles. The device then returns to reading array data.
Figure 3 illustrates the algorithm for the program operation. See the Erase/Program Operations table in AC Characteristics for parameters, and to Figure 17 for
timing diagrams.
START
Write Program
Command Sequence
Data Poll
from System
Embedded
Program
algorithm
in progress
Verify Data?
No
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
NOTE: See Table 9 for program command sequence.
Figure 3.
24
Program Operation
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Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the chip erase command,
which in turn invokes the Embedded Erase algorithm. The device does not require
the system to preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all zero data pattern
prior to electrical erase. The system is not required to provide any controls or timings during these operations. Table 9 shows the address and data requirements
for the chip erase command sequence.
Any commands written to the chip during the Embedded Erase algorithm are ignored. Note that a hardware reset during the chip erase operation immediately
terminates the operation. The Chip Erase command sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity.
The system can determine the status of the erase operation by using DQ7, DQ6,
DQ2, or RY/BY#. See Write Operation Status for information on these status bits.
When the Embedded Erase algorithm is complete, the device returns to reading
array data and addresses are no longer latched.
Figure 4 illustrates the algorithm for the erase operation. See the Erase/Program
Operations tables in AC Characteristics for parameters, and to Figure 18 for timing diagrams.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector erase command sequence is
initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the address of the sector to be
erased, and the sector erase command. Table 9 shows the address and data requirements for the sector erase command sequence.
The device does not require the system to preprogram the memory prior to erase.
The Embedded Erase algorithm automatically programs and verifies the sector for
an all zero data pattern prior to electrical erase. The system is not required to
provide any controls or timings during these operations.
After the command sequence is written, a sector erase time-out of 50 µs begins.
During the time-out period, additional sector addresses and sector erase commands may be written. Loading the sector erase buffer may be done in any
sequence, and the number of sectors may be from one sector to all sectors. The
time between these additional cycles must be less than 50 µs, otherwise the last
address and command might not be accepted, and erasure may begin. It is recommended that processor interrupts be disabled during this time to ensure all
commands are accepted. The interrupts can be re-enabled after the last Sector
Erase command is written. If the time between additional sector erase commands
can be assumed to be less than 50 µs, the system need not monitor DQ3. Any
command other than Sector Erase or Erase Suspend during the time-out
period resets the device to reading array data. The system must rewrite the
command sequence and any additional sector addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed
out. (See DQ3: Sector Erase Timer.) The time-out begins from the rising edge of
the final WE# pulse in the command sequence.
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Once the sector erase operation has begun, only the Erase Suspend command is
valid. All other commands are ignored. Note that a hardware reset during the
sector erase operation immediately terminates the operation. The Sector Erase
command sequence should be reinitiated once the device has returned to reading
array data, to ensure data integrity.
When the Embedded Erase algorithm is complete, the device returns to reading
array data and addresses are no longer latched. The system can determine the
status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. (Refer to Write
Operation Status for information on these status bits.)
Figure 4 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations tables in the AC Characteristics section for parameters, and to
Figure 18 for timing diagrams.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data from, or program data to, any sector not selected for
erasure. This command is valid only during the sector erase operation, including
the 50 µs time-out period during the sector erase command sequence. The Erase
Suspend command is ignored if written during the chip erase operation or Embedded Program algorithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the time-out period and suspends
the erase operation. Addresses are “don’t-cares” when writing the Erase Suspend
command.
When the Erase Suspend command is written during a sector erase operation, the
device requires a maximum of 20 µs to suspend the erase operation. However,
when the Erase Suspend command is written during the sector erase time-out,
the device immediately terminates the time-out period and suspends the erase
operation.
After the erase operation has been suspended, the system can read array data
from or program data to any sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Normal read and write timings and
command definitions apply. Reading at any address within erase-suspended sectors produces status data on DQ7–DQ0. The system can use DQ7, or DQ6 and
DQ2 together, to determine if a sector is actively erasing or is erase-suspended.
See Write Operation Status for information on these status bits.
After an erase-suspended program operation is complete, the system can once
again read array data within non-suspended sectors. The system can determine
the status of the program operation using the DQ7 or DQ6 status bits, just as in
the standard program operation. See Write Operation Status for more
information.
The system may also write the autoselect command sequence when the device
is in the Erase Suspend mode. The device allows reading autoselect codes even
at addresses within erasing sectors, since the codes are not stored in the memory
array. When the device exits the autoselect mode, the device reverts to the Erase
Suspend mode, and is ready for another valid operation. See Autoselect Command Sequence for more information.
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The system must write the Erase Resume command (address bits are “don’t
care”) to exit the erase suspend mode and continue the sector erase operation.
Further writes of the Resume command are ignored. Another Erase Suspend
command can be written after the device has resumed erasing.
START
Write Erase
Command Sequence
Data Poll
from System
No
Embedded
Erase
algorithm
in progress
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Table 9 for erase command sequence.
2. See DQ3: Sector Erase Timer for more information.
Figure 4.
December 17, 2004 S29AL016D_00_A2
Erase Operation
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P r e l i m i n a r y
Command Definitions
Table 9.
Read (Note 6)
Autoselect (Note 8)
Reset (Note 7)
Manufacturer ID
Word
Byte
Device ID,
Top Boot Block
Word
Device ID,
Bottom Boot Block
Word
Sector Protect Verify
(Note 9)
CFI Query (Note 10)
Program
Unlock Bypass
Byte
Byte
Bus Cycles (Notes 2–5)
Cycles
Command
Sequence
(Note 1)
Addr
Data
1
RA
RD
1
XXX
4
4
4
Word
First
555
AAA
555
AAA
555
AAA
AAA
Word
55
Byte
Word
Byte
1
4
3
Addr
AA
555
AAA
555
AAA
AA
AA
2AA
555
2AA
555
2AA
555
AA
AA
2AA
555
2AA
555
XXX
A0
PA
XXX
555
90
XXX
2AA
Sector Erase
Word
Byte
6
AAA
555
AAA
Fourth
Data
Addr
Data
90
X00
01
X01
22C4
Fifth
Addr
Sixth
Data
Addr
Data
55
555
AAA
555
AAA
555
AAA
90
90
555
90
AAA
X02
C4
X01
2249
X02
49
(SA)
X02
XX00
(SA)
X04
00
PA
PD
XX01
01
98
2
Byte
55
555
2
6
Third
Addr
55
Unlock Bypass Reset (Note 12)
Word
55
2AA
Unlock Bypass Program (Note 11)
Chip Erase
Data
F0
AA
AA
Byte
Word
Second
555
4
Byte
S29AL016D Command Definitions
AA
AA
Erase Suspend (Note 13)
1
XXX
B0
Erase Resume (Note 14)
1
XXX
30
555
2AA
555
55
55
555
AAA
555
AAA
A0
20
PD
F0
55
55
555
AAA
555
AAA
80
80
555
AAA
555
AAA
AA
AA
2AA
555
2AA
555
55
55
555
AAA
SA
10
30
Legend:
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses latch on the falling edge of the WE# or CE# pulse, whichever
happens later.
PD = Data to be programmed at location PA. Data latches on the rising edge of WE# or CE# pulse, whichever happens first.
SA = Address of the sector to be verified (in autoselect mode) or erased. Address bits A19–A12 uniquely select any sector.
Note:
1.
2.
See Table 1 for description of bus operations.
All values are in hexadecimal.
3.
Except for the read cycle and the fourth cycle of the autoselect command sequence, all bus cycles are write cycles.
4.
Data bits DQ15–DQ8 are don’t cares for unlock and command cycles.
5.
Address bits A19–A11 are don’t cares for unlock and command cycles, unless SA or PA required.
6.
No unlock or command cycles required when reading array data.
7.
The Reset command is required to return to reading array data when device is in the autoselect mode, or if DQ5 goes high (while the device
is providing status data).
8.
The fourth cycle of the autoselect command sequence is a read cycle.
9.
The data is 00h for an unprotected sector and 01h for a protected sector. See “Autoselect Command Sequence” for more information.
10. Command is valid when device is ready to read array data or when device is in autoselect mode.
11. The Unlock Bypass command is required prior to the Unlock Bypass Program command.
12. The Unlock Bypass Reset command is required to return to reading array data when the device is in the unlock bypass mode. F0 is also
acceptable.
13. The system may read and program in non-erasing sectors, or enter the autoselect mode, when in the Erase Suspend mode. The Erase
Suspend command is valid only during a sector erase operation.
14. The Erase Resume command is valid only during the Erase Suspend mode.
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Write Operation Status
The device provides several bits to determine the status of a write operation:
DQ2, DQ3, DQ5, DQ6, DQ7, and RY/BY#. Table 10 and the following subsections
describe the functions of these bits. DQ7, RY/BY#, and DQ6 each offer a method
for determining whether a program or erase operation is complete or in progress.
These three bits are discussed first.
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded
Algorithm is in progress or completed, or whether the device is in Erase Suspend.
Data# Polling is valid after the rising edge of the final WE# pulse in the program
or erase command sequence.
During the Embedded Program algorithm, the device outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to
programming during Erase Suspend. When the Embedded Program algorithm is
complete, the device outputs the datum programmed to DQ7. The system must
provide the program address to read valid status information on DQ7. If a program address falls within a protected sector, Data# Polling on DQ7 is active for
approximately 1 µs, then the device returns to reading array data.
During the Embedded Erase algorithm, Data# Polling produces a “0” on DQ7.
When the Embedded Erase algorithm is complete, or if the device enters the
Erase Suspend mode, Data# Polling produces a “1” on DQ7. This is analogous to
the complement/true datum output described for the Embedded Program algorithm: the erase function changes all the bits in a sector to “1”; prior to this, the
device outputs the “complement,” or “0.” The system must provide an address
within any of the sectors selected for erasure to read valid status information on
DQ7.
After an erase command sequence is written, if all sectors selected for erasing
are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the
device returns to reading array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected.
When the system detects DQ7 has changed from the complement to true data,
it can read valid data at DQ7–DQ0 on the following read cycles. This is because
DQ7 may change asynchronously with DQ0–DQ6 while Output Enable (OE#) is
asserted low. Figure 19, Data# Polling Timings (During Embedded Algorithms),
in the AC Characteristics section illustrates this.
Table 10 shows the outputs for Data# Polling on DQ7. Figure 6 shows the Data#
Polling algorithm.
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START
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
PASS
FAIL
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within
any sector selected for erasure. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Figure 5.
30
Data# Polling Algorithm
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RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin that indicates whether an Embedded Algorithm is in progress or complete. The RY/BY# status is valid after the
rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an
open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This
includes programming in the Erase Suspend mode.) If the output is high (Ready),
the device is ready to read array data (including during the Erase Suspend
mode), or is in the standby mode.
Table 10 shows the outputs for RY/BY#. Figures 13, 14, 17 and 18 shows RY/BY#
for read, reset, program, and erase operations, respectively.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded Program or Erase algorithm
is in progress or complete, or whether the device has entered the Erase Suspend
mode. Toggle Bit I may be read at any address, and is valid after the rising edge
of the final WE# pulse in the command sequence (prior to the program or erase
operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause DQ6 to toggle. (The system may use either OE# or CE#
to control the read cycles.) When the operation is complete, DQ6 stops toggling.
After an erase command sequence is written, if all sectors selected for erasing
are protected, DQ6 toggles for approximately 100 µs, then returns to reading
array data. If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are
protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erase-suspended. When the device is actively erasing (that is,
the Embedded Erase algorithm is in progress), DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing or erase-suspended. Alternatively, the system can use DQ7 (see the subsection on DQ7: Data# Polling).
If a program address falls within a protected sector, DQ6 toggles for approximately 1 µs after the program command sequence is written, then returns to
reading array data.
DQ6 also toggles during the erase-suspend-program mode, and stops toggling
once the Embedded Program algorithm is complete.
Table 10 shows the outputs for Toggle Bit I on DQ6. Figure 6 shows the toggle bit
algorithm in flowchart form, and the section Reading Toggle Bits DQ6/DQ2 explains the algorithm. Figure 20 in the AC Characteristics section shows the toggle
bit timing diagrams. Figure 21 shows the differences between DQ2 and DQ6 in
graphical form. See also the subsection on DQ2: Toggle Bit II.
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DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular
sector is actively erasing (that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit II is valid after the rising
edge of the final WE# pulse in the command sequence.
DQ2 toggles when the system reads at addresses within those sectors that have
been selected for erasure. (The system may use either OE# or CE# to control the
read cycles.) But DQ2 cannot distinguish whether the sector is actively erasing or
is erase-suspended. DQ6, by comparison, indicates whether the device is actively
erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected
for erasure. Thus, both status bits are required for sector and mode information.
Refer to Table 10 to compare outputs for DQ2 and DQ6.
Figure 6 shows the toggle bit algorithm in flowchart form, and the section Reading
Toggle Bits DQ6/DQ2 explains the algorithm. See also the DQ6: Toggle Bit I subsection. Figure 20 shows the toggle bit timing diagram. Figure 21 shows the
differences between DQ2 and DQ6 in graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 6 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, the system would note and
store the value of the toggle bit after the first read. After the second read, the
system would compare the new value of the toggle bit with the first. If the toggle
bit is not toggling, the device has completed the program or erase operation. The
system can read array data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system determines that the toggle
bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should then determine again
whether the toggle bit is toggling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the
device did not complete the operation successfully, and the system must write
the reset command to return to reading array data.
The remaining scenario is that the system initially determines that the toggle bit
is toggling and DQ5 has not gone high. The system may continue to monitor the
toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other
system tasks. In this case, the system must start at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 6).
32
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START
Read DQ7–DQ0
Read DQ7–DQ0
(Note 1)
No
Toggle Bit
= Toggle?
Yes
No
DQ5 = 1?
Yes
Read DQ7–DQ0
Twice
(Notes
1,2)
Toggle Bit
= Toggle?
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Notes:
1. Read toggle bit twice to determine whether or not it
is toggling. See text.
2. Recheck toggle bit because it may stop toggling as
DQ5 changes to “1”. See text.
Figure 6.
December 17, 2004 S29AL016D_00_A2
Toggle Bit Algorithm
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DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has exceeded a specified internal pulse count limit. Under these conditions DQ5 produces a “1.” This is a failure
condition that indicates the program or erase cycle was not successfully
completed.
The DQ5 failure condition may appear if the system tries to program a “1” to a
location that is previously programmed to “0.” Only an erase operation can
change a “0” back to a “1.” Under this condition, the device halts the operation, and when the operation has exceeded the timing limits, DQ5 produces a “1.”
Under both these conditions, the system must issue the reset command to return
the device to reading array data.
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the system may read DQ3 to determine whether or not an erase operation has begun. (The sector erase timer
does not apply to the chip erase command.) If additional sectors are selected for
erasure, the entire time-out also applies after each additional sector erase command. When the time-out is complete, DQ3 switches from “0” to “1.” The system
may ignore DQ3 if the system can guarantee that the time between additional
sector erase commands will always be less than 50 µs. See also the Sector Erase
Command Sequence section.
After the sector erase command sequence is written, the system should read the
status on DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure the device has accepted the command sequence, and then read DQ3. If DQ3 is “1”, the internally
controlled erase cycle has begun; all further commands (other than Erase Suspend) are ignored until the erase operation is complete. If DQ3 is “0”, the device
will accept additional sector erase commands. To ensure the command has been
accepted, the system software should check the status of DQ3 prior to and following each subsequent sector erase command. If DQ3 is high on the second
status check, the last command might not have been accepted. Table 10 shows
the outputs for DQ3.
Table 10.
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
RY/BY#
Embedded Program Algorithm
DQ7#
Toggle
0
N/A
No toggle
0
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
0
Reading within Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
1
Reading within Non-Erase
Suspended Sector
Data
Data
Data
Data
Data
1
Erase-Suspend-Program
DQ7#
Toggle
0
N/A
N/A
0
Operation
Standard
Mode
Erase
Suspend
Mode
Write Operation Status
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing
limits. See DQ5: Exceeded Timing Limits for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
34
S29AL016D
S29AL016D_00_A2 December 17, 2004
P r e l i m i n a r y
Absolute Maximum Ratings
Storage Temperature
Plastic Packages. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–65°C to +150°C
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–65°C to +125°C
Voltage with Respect to Ground
VCC (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
A9, OE#, and RESET# (Note 2) . . . . . . . . . . . . . . . . –0.5 V to +12.5 V
All other pins (Note 1) . . . . . . . . . . . . . . . . . . . . . –0.5 V to VCC+0.5 V
Output Short Circuit Current (Note 3). . . . . . . . . . . . . . . . . . . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may overshoot VSS
to –2.0 V for periods of up to 20 ns. See Figure 7. Maximum DC voltage on input or I/O pins is VCC +0.5 V. During
voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 8.
2. Minimum DC input voltage on pins A9, OE#, and RESET# is -0.5 V. During voltage transitions, A9, OE#, and
RESET# may overshoot VSS to –2.0 V for periods of up to 20 ns. See Figure 7. Maximum DC input voltage on pin
A9 is +12.5 V which may overshoot to 14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater
than one second.
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for
extended periods may affect device reliability.
20 ns
20 ns
+0.8 V
–0.5 V
–2.0 V
20 ns
Figure 7.
Maximum Negative Overshoot Waveform
20 ns
VCC
+2.0 V
VCC
+0.5 V
2.0 V
20 ns
Figure 8.
December 17, 2004 S29AL016D_00_A2
Maximum Positive Overshoot Waveform
S29AL016D
35
P r e l i m i n a r y
Operating Ranges
Industrial (I) Devices
Ambient Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . –40°C to +85°C
VCC Supply Voltages
VCC for standard voltage range . . . . . . . . . . . . . . . . . . . . . . . . 2.7 V to 3.6 V
Operating ranges define those limits between which the functionality of the device is
guaranteed.
36
S29AL016D
S29AL016D_00_A2 December 17, 2004
P r e l i m i n a r y
DC Characteristics
CMOS Compatible
Parameter
Description
Test Conditions
ILI
Input Load Current
VIN = VSS to VCC,
VCC = VCC max
ILIT
A9 Input Load Current
VCC = VCC max; A9 = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC max
CE# = VIL, OE# = VIH,
Byte Mode
ICC1
VCC Active Read Current
(Notes 1, 2)
CE# = VIL, OE# = VIH,
Word Mode
Min
Typ
Max
Unit
±1.0
µA
35
µA
±1.0
µA
10 MHz
15
30
5 MHz
9
16
1 MHz
2
4
10 MHz
18
35
5 MHz
9
16
1 MHz
2
4
20
35
mA
mA
ICC2
VCC Active Write Current
(Notes 2, 3, 5)
ICC3
VCC Standby Current (Notes 2, 4) CE#, RESET# = VCC±0.3 V
0.2
5
µA
ICC4
VCC Standby Current During Reset
RESET# = VSS ± 0.3 V
(Notes 2, 4)
0.2
5
µA
ICC5
Automatic Sleep Mode
(Notes 2, 4, 6)
0.2
5
µA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
0.7 x VCC
VCC + 0.3
V
VID
Voltage for Autoselect and
Temporary Sector Unprotect
VCC = 3.3 V
11.5
12.5
V
VOL
Output Low Voltage
IOL = 4.0 mA, VCC = VCC min
0.45
V
VOH1
VOH2
VLKO
Output High Voltage
CE# = VIL, OE# = VIH
VIH = VCC ± 0.3 V;
VIL = VSS ± 0.3 V
IOH = -2.0 mA, VCC = VCC min
2.4
V
IOH = -100 µA, VCC = VCC min
VCC–0.4
V
Low VCC Lock-Out Voltage (Note 4)
2.3
2.5
V
Notes:
1. The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. Typical VCC is 3.0 V.
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. ICC active while Embedded Erase or Embedded Program is in progress.
4. At extended temperature range (>+85°C), typical current is 5 µA and maximum current is 10 µA.
5. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep
mode current is 200 nA.
6. Not 100% tested.
December 17, 2004 S29AL016D_00_A2
S29AL016D
37
P r e l i m i n a r y
DC Characteristics (continued)
Zero Power Flash
Supply Current in mA
25
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1 MHz
Figure 9.
ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
10
3.6 V
Supply Current in mA
8
2.7 V
6
4
2
0
1
2
3
4
5
Frequency in MHz
Note:
T = 25 °C
Figure 10.
38
Typical ICC1 vs. Frequency
S29AL016D
S29AL016D_00_A2 December 17, 2004
P r e l i m i n a r y
Test Conditions
3.3 V
2.7 kΩ
Device
Under
Test
CL
6.2 kΩ
Note: Diodes are IN3064 or equivalent
Figure 11.
Table 11.
Test Setup
Test Specifications
Test Condition
70
Output Load
Unit
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
Input Rise and Fall Times
30
100
pF
5
ns
0.0 or VCC
V
Input timing measurement
reference levels
0.5 VCC
V
Output timing measurement
reference levels
0.5 VCC
V
Input Pulse Levels
December 17, 2004 S29AL016D_00_A2
90
S29AL016D
39
P r e l i m i n a r y
Key to Switching Waveforms
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
VCC
Input
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
0.5 VCC
Measurement Level
0.5 VCC
Output
0.0 V
Figure 12.
40
Input Waveforms and Measurement Levels
S29AL016D
S29AL016D_00_A2 December 17, 2004
P r e l i m i n a r y
AC Characteristics
Read Operations
Parameter
Speed Options
JEDEC
Std
Description
tAVAV
tRC
Read Cycle Time (Note 1)
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable to Output Delay
tGLQV
tOE
tEHQZ
tGHQZ
tAXQX
Test Setup
70
90
Unit
Min
70
90
ns
CE# = VIL
OE# = VIL
Max
70
90
ns
OE# = VIL
Max
70
90
ns
Output Enable to Output Delay
Max
30
35
ns
tDF
Chip Enable to Output High Z (Note 1)
Max
25
30
ns
tDF
Output Enable to Output High Z (Note 1)
Max
25
30
ns
tOEH
Output Enable
Hold Time (Note 1)
tOH
Output Hold Time From Addresses, CE# or
OE#, Whichever Occurs First (Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
Min
0
ns
Notes:
1. Not 100% tested.
2. See Figure 11 and Table 11 for test specifications.
tRC
Addresses Stable
Addresses
tACC
CE#
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0V
Figure 13.
December 17, 2004 S29AL016D_00_A2
Read Operations Timings
S29AL016D
41
P r e l i m i n a r y
AC Characteristics
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
Test Setup
All Speed Options
Unit
tREADY
RESET# Pin Low (During Embedded Algorithms)
to Read or Write (See Note)
Max
20
µs
tREADY
RESET# Pin Low (NOT During Embedded
Algorithms) to Read or Write (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
RESET# High Time Before Read (See Note)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
20
µs
tRB
RY/BY# Recovery Time
Min
0
ns
Note: Not 100% tested.
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Figure 14.
42
RESET# Timings
S29AL016D
S29AL016D_00_A2 December 17, 2004
P r e l i m i n a r y
AC Characteristics
Word/Byte Configuration (BYTE#)
Parameter
JEDEC
Speed Options
Std
Description
70
90
5
Unit
tELFL/tELFH
CE# to BYTE# Switching Low or High
Max
ns
tFLQZ
BYTE# Switching Low to Output HIGH Z
Max
25
30
ns
tFHQV
BYTE# Switching High to Output Active
Min
70
90
ns
CE#
OE#
BYTE#
BYTE#
Switching
from word
to byte
mode
DQ0–DQ14
tELFL
Data Output
(DQ0–DQ14)
Data Output
(DQ0–DQ7)
Address
Input
DQ15
Output
DQ15/A-1
tFLQZ
tELFH
BYTE#
BYTE#
Switching
from byte
to word
mode
DQ0–DQ14
Data Output
(DQ0–DQ7)
Address
Input
DQ15/A-1
Data Output
(DQ0–DQ14)
DQ15
Output
tFHQV
Figure 15.
December 17, 2004 S29AL016D_00_A2
BYTE# Timings for Read Operations
S29AL016D
43
P r e l i m i n a r y
AC Characteristics
CE#
The falling edge of the last WE# signal
WE#
BYTE#
tSET
(tAS)
tHOLD (tAH)
Note: Refer to the Erase/Program Operations table for tAS and tAH specifications.
Figure 16.
44
BYTE# Timings for Write Operations
S29AL016D
S29AL016D_00_A2 December 17, 2004
P r e l i m i n a r y
AC Characteristics
Erase/Program Operations
Parameter
Speed Options
JEDEC
Std
Description
70
90
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
70
90
ns
tAVWL
tAS
Address Setup Time
Min
tWLAX
tAH
Address Hold Time
Min
45
45
ns
tDVWH
tDS
Data Setup Time
Min
35
45
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
0
ns
tGHWL
tGHWL
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHWL
tWPH
Write Pulse Width High
Min
30
tWHWH1
tWHWH1
Programming Operation (Note 2)
Byte
Typ
5
Word
Typ
7
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.7
sec
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tRB
Recovery Time from RY/BY#
Min
0
ns
Program/Erase Valid to RY/BY# Delay
Max
90
ns
tBUSY
35
35
ns
ns
µs
Notes:
1. Not 100% tested.
2. See the Erase and Programming Performance section for more information.
December 17, 2004 S29AL016D_00_A2
S29AL016D
45
P r e l i m i n a r y
AC Characteristics
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
555h
Read Status Data (last two cycles)
PA
PA
PA
tAH
CE#
tCH
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
A0h
Data
PD
DOUT
Status
tBUSY
tRB
RY/BY#
tVCS
VCC
Notes:
1. PA = program address, PD = program data, DOUT is the true data at the program address.
2. Illustration shows device in word mode.
Figure 17.
46
Program Operation Timings
S29AL016D
S29AL016D_00_A2 December 17, 2004
P r e l i m i n a r y
AC Characteristics
Erase Command Sequence (last two cycles)
tAS
tWC
2AAh
Addresses
Read Status Data
VA
SA
VA
555h for chip erase
tAH
CE#
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCC
Notes:
1. SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).
2. Illustration shows device in word mode.
Figure 18.
December 17, 2004 S29AL016D_00_A2
Chip/Sector Erase Operation Timings
S29AL016D
47
P r e l i m i n a r y
AC Characteristics
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
DQ0–DQ6
Status Data
Status Data
Valid Data
True
High Z
Valid Data
True
tBUSY
RY/BY#
Note: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and
array data read cycle.
Figure 19.
Data# Polling Timings (During Embedded Algorithms)
tRC
Addresses
VA
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ6/DQ2
tBUSY
Valid Status
Valid Status
(first read)
(second read)
Valid Status
Valid Data
(stops toggling)
RY/BY#
Note: VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last
status read cycle, and array data read cycle.
Figure 20.
48
Toggle Bit Timings (During Embedded Algorithms)
S29AL016D
S29AL016D_00_A2 December 17, 2004
P r e l i m i n a r y
AC Characteristics
Enter
Embedded
Erasing
Erase
Suspend
Erase
WE#
Enter Erase
Suspend Program
Erase
Suspend
Program
Erase Suspend
Read
Erase
Resume
Erase
Erase Suspend
Read
Erase
Complete
DQ6
DQ2
Note: The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an
erase-suspended sector.
Figure 21.
DQ2 vs. DQ6 for Erase and Erase Suspend Operations
Temporary Sector Unprotect
Parameter
JEDEC
Std
tVIDR
tRSP
Description
VID Rise and Fall Time (See Note)
RESET# Setup Time for Temporary Sector
Unprotect
All Speed Options
Unit
Min
500
ns
Min
4
µs
Note: Not 100% tested.
12 V
RESET#
0 or 3 V
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRSP
RY/BY#
Figure 22.
December 17, 2004 S29AL016D_00_A2
Temporary Sector Unprotect/Timing Diagram
S29AL016D
49
P r e l i m i n a r y
AC Characteristics
VID
VIH
RESET#
SA, A6,
A1, A0
Valid*
Valid*
Sector Protect/Unprotect
Data
60h
Valid*
Verify
60h
40h
Status
Sector Protect: 150 µs
Sector Unprotect: 15 ms
1 µs
CE#
WE#
OE#
Note:
For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
Figure 23.
50
Sector Protect/Unprotect Timing Diagram
S29AL016D
S29AL016D_00_A2 December 17, 2004
P r e l i m i n a r y
AC Characteristics
Alternate CE# Controlled Erase/Program Operations
Parameter
Speed Options
JEDEC
Std
Description
70
90
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
70
90
ns
tAVEL
tAS
Address Setup Time
Min
tELAX
tAH
Address Hold Time
Min
45
45
ns
tDVEH
tDS
Data Setup Time
Min
35
45
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
tEHEL
tCPH
CE# Pulse Width High
Min
30
tWHWH1
tWHWH1
Programming Operation (Note 2)
Byte
Typ
5
Word
Typ
7
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.7
0
35
ns
35
ns
ns
µs
sec
Notes:
1. Not 100% tested.
2. See the Erase and Programming Performance section for more information.
December 17, 2004 S29AL016D_00_A2
S29AL016D
51
P r e l i m i n a r y
AC Characteristics
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tCP
CE#
tWS
tWHWH1 or 2
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data
written to the device.
2. Figure indicates the last two bus cycles of the command sequence.
3. Word mode address used as an example.
Figure 24.
52
Alternate CE# Controlled Write Operation Timings
S29AL016D
S29AL016D_00_A2 December 17, 2004
P r e l i m i n a r y
Erase and Programming Performance
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
10
s
Chip Erase Time
25
Excludes 00h programming
prior to erasure (Note 4)
Byte Programming Time
5
150
µs
Word Programming Time
7
210
µs
Chip Programming Time
Byte Mode
11
33
s
(Note 3)
Word Mode
7.2
21.6
s
s
Excludes system level
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, VCC = 3.0 V, 100,000 cycles, checkerboard
data pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most
bytes program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
command. See Table 9 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles per sector.
TSOP and BGA Pin Capacitance
Parameter
Symbol
Parameter Description
Test Setup
CIN
Input Capacitance
VIN = 0
COUT
Output Capacitance
VOUT = 0
CIN2
Control Pin Capacitance
VIN = 0
Package
Typ
Max
Unit
TSOP
6
7.5
pF
BGA
4.2
5.0
pF
TSOP
8.5
12
pF
BGA
5.4
6.5
pF
TSOP
7.5
9
pF
BGA
3.9
4.7
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
December 17, 2004 S29AL016D_00_A2
S29AL016D
53
P r e l i m i n a r y
Physical Dimensions
TS 048—48-Pin Standard TSOP
54
S29AL016D
S29AL016D_00_A2 December 17, 2004
P r e l i m i n a r y
2X
0.10
STANDARD PIN OUT (TOP VIEW)
2X (N/2 TIPS)
2X
2
0.10
0.10
1
A2
N
SEE DETAIL B
A
REVERSE PIN OUT (TOP VIEW)
3
B
1
N
E 5
N
+1
2
N
2
D1
0.25
9
A1
4
D
2X (N/2 TIPS)
e
5
C
SEATING
PLANE
B
A
B
N
+1
2
N
2
SEE DETAIL A
0.08MM
(0.0031")
b
M
C A-B S
6
7
WITH PLATING
7
(c)
c1
b1
SECTION B-B
BASE METAL
R
(c)
e/2
GAUGE PLANE
θ°
PARALLEL TO
SEATING PLANE
0.25MM (0.0098") BSC
X
C
L
X = A OR B
DETAIL A
DETAIL B
NOTES:
Jedec
MO-142 (D) DD
Symbol
A
A1
A2
b1
b
c1
c
D
D1
E
e
L
0
R
N
MAX
1.20
0.15
0.05
1.05
1.00
0.95
0.20
0.23
0.17
0.27
0.22
0.17
0.16
0.10
0.21
0.10
19.80 20.00 20.20
18.30 18.40 18.50
11.90 12.00 12.10
0.50 BASIC
0.70
0.50
0.60
8˚
0˚
0.20
0.08
48
MIN
NOM
1
CONTROLLING DIMENSIONS ARE IN MILLIMETERS (mm).
(DIMENSIONING AND TOLERANCING CONFORMS TO ANSI Y14.5M-1982)
2
PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE UP).
3
PIN 1 IDENTIFIER FOR REVERSE PIN OUT (DIE DOWN), INK OR LASER MARK.
4
TO BE DETERMINED AT THE SEATING PLANE -C- . THE SEATING PLANE IS DEFINED AS THE PLANE OF
CONTACT THAT IS MADE WHEN THE PACKAGE LEADS ARE ALLOWED TO REST FREELY ON A FLAT
HORIZONTAL SURFACE.
5
DIMENSIONS D1 AND E DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE MOLD PROTUSION IS
0.15mm (.0059") PER SIDE.
6
DIMENSION b DOES NOT INCLUDE DAMBAR PROTUSION. ALLOWABLE DAMBAR PROTUSION SHALL BE
0.08 (0.0031") TOTAL IN EXCESS OF b DIMENSION AT MAX. MATERIAL CONDITION. MINIMUM SPACE
BETWEEN PROTRUSION AND AN ADJACENT LEAD TO BE 0.07 (0.0028").
7
THESE DIMENSIONS APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10MM (.0039") AND
0.25MM (0.0098") FROM THE LEAD TIP.
8
LEAD COPLANARITY SHALL BE WITHIN 0.10mm (0.004") AS MEASURED FROM THE SEATING PLANE.
9
DIMENSION "e" IS MEASURED AT THE CENTERLINE OF THE LEADS.
3355 \ 16-038.10c
* For reference only. BSC is an ANSI standard for Basic Space Centering.
December 17, 2004 S29AL016D_00_A2
S29AL016D
55
P r e l i m i n a r y
Physical Dimensions
VBK048—48-Ball Fine-Pitch Ball Grid Array (FBGA)
8.15 mm x 6.15 mm
0.10
D
(4X)
D1
A
6
5
7
e
4
E
SE
E1
3
2
1
H
PIN A1
CORNER
INDEX MARK
6
B
10
G
F
φb
E
D
C
SD
B
A
A1 CORNER
7
φ 0.08 M C
TOP VIEW
φ 0.15 M C A B
BOTTOM VIEW
0.10 C
A2
A
SEATING PLANE
A1
C
0.08 C
SIDE VIEW
NOTES:
PACKAGE
VBK 048
JEDEC
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
N/A
2. ALL DIMENSIONS ARE IN MILLIMETERS.
8.15 mm x 6.15 mm NOM
PACKAGE
SYMBOL
MIN
NOM
MAX
A
---
---
1.00
A1
0.18
---
---
A2
0.62
---
0.76
3. BALL POSITION DESIGNATION PER JESD 95-1, SPP-010 (EXCEPT
AS NOTED).
NOTE
4.
OVERALL THICKNESS
BALL HEIGHT
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
BODY THICKNESS
D
8.15 BSC.
BODY SIZE
E
6.15 BSC.
BODY SIZE
N IS THE TOTAL NUMBER OF SOLDER BALLS.
D1
5.60 BSC.
BALL FOOTPRINT
E1
4.00 BSC.
BALL FOOTPRINT
MD
8
ROW MATRIX SIZE D DIRECTION
ME
6
ROW MATRIX SIZE E DIRECTION
N
48
TOTAL BALL COUNT
φb
0.35
---
0.43
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
BALL DIAMETER
e
0.80 BSC.
BALL PITCH
SD / SE
0.40 BSC.
SOLDER BALL PLACEMENT
---
e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
DEPOPULATED SOLDER BALLS
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
3338 \ 16-038.25b
56
S29AL016D
S29AL016D_00_A2 December 17, 2004
P r e l i m i n a r y
SO044—44-Pin Small Outline Package (SOP)
28.20 mm x 13.30 mm
Dwg rev AC; 10/99
December 17, 2004 S29AL016D_00_A2
S29AL016D
57
P r e l i m i n a r y
Revision Summary
Revision A (May 4, 2004)
Initial Release.
Revision A1 (July 28, 2004)
Ordering Information
Updated ordering information: model number, speed options, and valid combinations
for TSOP and BGA packages.
DC Characteristics
Updated Max information for ICC2.
Physical Dimensions
Updated VBK048 and TS048 drawings.
Revision A2 (December 17, 2004)
Data Sheet Type
Changed from Advance Information to Preliminary.
Ordering Information
Updated ordering information: Small Outline Package options
Physical Dimensions
Added SO044 Package.
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary
industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that
includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal
injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control,
medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and
artificial satellite). Please note that Spansion will not be liable to you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures
by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other
abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under
the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country, the prior authorization by the respective government entity will be required for export of those products.
Trademarks and Notice
The contents of this document are subject to change without notice. This document may contain information on a Spansion product under development by
Spansion LLC. Spansion LLC reserves the right to change or discontinue work on any product without notice. The information in this document is provided
as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose, merchantability, non-infringement
of third-party rights, or any other warranty, express, implied, or statutory. Spansion LLC assumes no liability for any damages of any kind arising out of the
use of the information in this document.
Copyright ©2004 Spansion LLC. All rights reserved. Spansion, the Spansion logo, MirrorBit, combinations thereof are trademarks of Spansion LLC. Other
company and product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
58
S29AL016D
S29AL016D_00_A2 December 17, 2004
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