HMC AUH249

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
Customised Pack Sizes / Qtys

Assembly Assistance

Support for all industry recognised
supply formats:

Die handling consultancy

Hi-Rel die qualification

Hot & Cold die probing

Electrical test & trimming
o Waffle Pack
o Gel Pak
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
Onsite storage, stockholding &
scheduling

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
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
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storage systems for secure long
term product support

On-site failure analysis
Contact
[email protected]
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HMC-AUH249
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HMC-AUH249
v04.0909
4
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 35 GHz
Typical Applications
Features
This HMC-AUH249 is ideal for:
Small Signal Gain: 15 dB
• Fiber Optic Modulator Driver
Output Voltage: up to 8V pk-pk
• Gain Block for Test & Measurement Equipment
Psat Output Power: +23 dBm
• Point-to-Point/ Point-to-Multi-Point Radios
High Speed Performance: >35 GHz 3 dB Bandwidth
• Wideband Communication & Surveillance Systems
Supply Voltage: +5V @ 200 mA
• Radar Warning Systems
Small Die Size: 2.2 x 1.80 x 0.1 mm
Optical & Modulator Drivers - Chip
• Military & Space
General Description
Functional Diagram
The HMC-AUH249 is a GaAs MMIC HEMT Distributed
Driver Amplifier die which operates between DC and
35 GHz and provides a typical 3 dB bandwidth of
37 GHz. The amplifier provides 15 dB of gain and
+23 dBm of saturated output power while requiring
only 200 mA from a +5V supply. The HMC-AUH249
exhibits very good gain and phase ripple beyond
25 GHz and can output greater than 8V peak-topeak, making it ideal for use in broadband wireless,
fiber optic communication and test equipment
applications. The amplifier die occupies less than
4 mm² which facilitates easy integration into MultiChip-Modules (MCMs). The HMC-AUH249 requires
a bias-tee as well as off-chip blocking components
and bypass capacitors for the DC supply lines. Vgg1
adjusts the bias current for the device while Vgg2
adjusts the output gain.
Electrical Specifications [1], TA = +25 °C, Vdd = 5V, Vgg2 = 1.5V
Parameter
Min.
Gain
Bandwidth (3 dB)
Typ.
Max.
Units
15
dB
>35
GHz
Gain Variation
DC - 35 GHz
±1
dB
Group Delay Variation
DC - 25 GHz
±10
ps
Power Output at 1 dB Compression
DC - 5 GHz
21
dBm
Power Output at Saturation
DC - 5 GHz
23
dBm
8
Vpp
Maximum Output Amplitude
Input Return Loss
DC - 20 GHz
DC - 35 GHz
15
9
dB
dB
Output Return Loss
DC - 20 GHz
DC - 35 GHz
13
7
dB
dB
Power Dissipation
Supply Current (Idd)
1
W
200
mA
[1] Unless otherwise indicated, all measurements are from die in a test fixture.
[2] Adjust Vgg1 between -1.0V to 0V to achieve Idd = 200 mA.
4-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC-AUH249
v04.0909
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 35 GHz
Group Delay vs. Frequency
Gain vs. Frequency
250
GROUP DELAY (psec)
14
GAIN (dB)
10
6
2
-2
230
210
4
190
170
-6
150
-10
0
5
10
15
20
25
30
35
40
45
10
50
15
20
Input Return Loss vs. Frequency
30
35
40
Output Return Loss vs. Frequency
0
0
-5
-10
RETURN LOSS (dB)
-5
-10
-15
-20
-25
-30
-35
-15
-20
-25
-30
-35
-40
-40
0
5
10
15
20
25
30
35
40
45
50
0
5
10
15
FREQUENCY (GHz)
20
25
30
35
40
45
50
FREQUENCY (GHz)
Fixtured Pout vs. Frequency
24
22
20
POUT (dBm)
RETURN LOSS (dB)
25
FREQUENCY (GHz)
FREQUENCY (GHz)
18
16
Optical & Modulator Drivers - Chip
18
P1dB
P3dB
14
12
10
0
5
10
15
20
25
30
35
40
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
4-2
HMC-AUH249
v04.0909
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 35 GHz
12.5 Gb/s Eye Diagram [1]
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Optical & Modulator Drivers - Chip
4
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
+7 Vdc
Recommended Operating Conditions
Parameter
Min.
RF Input Power
+10 dBm
Positive Supply Voltage (Vdd)
Channel Temperature
180 °C
Positive Supply Current
Storage Temperature
-65 to +150 °C
Bias Current Adjust (Vgg1)
-1
Operating Temperature
-55 to +110 °C
Output Voltage Adjust (Vgg2)
0.3
RF Input Power
Typ.
Max.
Units
5
6
V
200
230
mA
-0.5
0
V
1.5
1.5
V
4
dBm
[1] Input 12.5 Gb/s data stream, 01.0V, PRBS 2ˆ31-1
4-3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC-AUH249
v04.0909
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 35 GHz
Outline Drawing
Die Packaging Information [1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
Optical & Modulator Drivers - Chip
4
4-4
HMC-AUH249
v04.0909
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 35 GHz
Pin Descriptions
Optical & Modulator Drivers - Chip
4
4-5
Pin Number
Function
Description
1
RFIN
DC coupled. Blocking Cap is needed.
2
RES1
AC coupled 50Ω termination.
3
Vgg2
Gate control for amplifier. Please follow “MMIC Amplifier
Biasing Procedure” application note. See assembly for
required external components.
4
RFOUT & Vdd
RF output and DC bias (Vdd) for the output stage.
6
Vgg1
Gate control for amplifier. Please follow “MMIC Amplifier
Biasing Procedure” application note. See assembly for
required external components.
5
RES2
AC coupled 35Ω termination.
Die Bottom
GND
Die Bottom must be connected to RF/DC ground.
Interface Schematic
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC-AUH249
v04.0909
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 35 GHz
Assembly Diagram
Optical & Modulator Drivers - Chip
4
Note 1: Drain Bias (Vdd) must be applied through a broadband bias tee or external bias network
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
4-6
HMC-AUH249
v04.0909
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 35 GHz
Device Mounting
• 1 mil diameter wire bonds are used on Vgg1 and Vgg2 connections to the capacitors and 27Ω resistors.
• 0.5mil x 3mil ribbon bonds are used on RF connections
• Capacitors and resistors on Vgg1 and Vgg2 are used to filter low frequency, <800MHz, RF pickup
Optical & Modulator Drivers - Chip
4
4-7
• 35Ω and 50Ω resistors are fabricated on a 5mil alumina substrate and should be suitable for use as a high
frequency termination.
• For best gain flatness and group delay variation, eccosorb can be epoxied on the transmission line
covering the center 3/4 of the transmission line length. Eccosorb may also be placed partially across the
RES1 pad and 35Ω resistor for improved gain flatness and group delay variation.
(The insertion of the transmission line helps reduce low frequency, <10GHz, gain ripple)
• Silver-filled conductive epoxy is used for die attachment
(Backside of the die should be grounded and the GND pads are connected to the backside metal through Vias)
Device Operation
These devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed
during handling, assembly and test.
The input to this device should be AC-coupled.
Device Power Up Instructions
1. Ground the device
2. Bring Vgg1 to -0.5V (no Vbias current)
3. Bring Vgg2 to +1.5V (no Vbias current)
4. Bring Vdd to +5V (150mA to 225mA drain current)
(Initially the drain current (Vbias) will rise sharply with a small Vbias voltage, but will flatten out as Vbias
approaches 5V)
• Vgg1 should be varied between -1.0V and 0V to achieve 200mA current on the drain (Vbias).
• Vbias may be increased to +5.5V if required to achieve greater output voltage swing.
• Vgg2 may be adjusted between +1.5V and +0.3V to vary the output voltage swing.
Device Power Down Instructions
1. Reverse the sequence identified above in steps 1 through 4.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC-AUH249
v04.0909
GaAs HEMT MMIC MODULATOR
DRIVER AMPLIFIER, DC - 35 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Ribbon Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity:
strikes.
0.102mm (0.004”) Thick GaAs MMIC
Ribbon Bond
0.076mm
(0.003”)
RF Ground Plane
Follow ESD precautions to protect against ESD
Transients: Suppress instrument and bias supply transients while bias is
applied. Use shielded signal and bias cables to minimize inductive pickup.
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010” Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
4
Optical & Modulator Drivers - Chip
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
4-8
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