datasheet for RAD7210

datasheet for RAD7210
Standard Products
RAD7210-NCx Power MOSFET Die
Data Sheet
April, 2012
www.aeroflex.com/MOSFETS
FEATURES
INTRODUCTION
 200Vbreakdown voltage
 2.0 A current rating
 0.70RDS(on)
Aeroflex RAD's new radiation tolerant power MOSFETs are
now available in die, seven standard package options and custom
packaging for HiRel environments. Applications within
military, aerospace, medical, nuclear power generation, high
energy physics research laboratories can benefit from the use of
this new series of MOSFETs. Aeroflex's Power MOSFETs are
radiation tolerant to 100 krad(Si) and SEGR/SEB immune to
their full rated breakdown potential.
 15nC gate charge
 -55oC to +125oC temperature range
 Operational Environment radiation testing to MIL-STD750
- Total-dose: 100 krads(Si)
- SEGR/SEB immune to Xe at full rated drain potential
 Bare Die
- Prototype, EMs and Class S
 Drop-in compatible with industry standards
 Class S MOSFETs built to your custom flow
Operational power losses are minimized by Aeroflex’s ideal
combination of low RDS(on) and gate charge. Die size is
optimized for maximum current rating while meeting industry
norms. These units are suitable for standalone and hybrid
applications.
The RAD7210-NCx Die are well suited for low loss switching
applications, such as DC-to-DC Converters and solid-state
relays. They are drop-in compatible with industry standards.
ELECTRICAL CHARACTERISTICS (Case temperature (Tc) = 25oC unless otherwise specified)
CHARACTERISTICS
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero-Gate Leakage
Drain Current
TEST CONDITIONS
MIN
TYP
MA
X
Vgs - 0V, Id = 1mA
200
-
-
V
Vgs(th)
Vds = Vgs, Id = 1.0mA
2.0
-
4.0
V
Vgs = +20V
-
-
100
nA
-
-
25
250
A
-
-
0.70
ohms
-
-
15
nC
V
Igss
Idss1
Vds = 160V, Vgs = 0V
Idss2 Vds = 160V, Vgs = 0V, Tc = 125oC
Rds(on)
Vgs = 12V, Id = 1.6A
Gate Charge at 12V
Qg(12)
Vgs = 0V to 12V
Junction-to-Case
UNITS
BVdss
Drain-Source On Resistance
Diode Forward Voltage
LIMITS
Id = 2.0A
Vdd = 100V
Vsd
Id = 2.0A, Vgs = 0V
0.6
-
1.8
Rjc
NA/Die
-
-
-
o
C/W
POST-RADIATION ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
Drain-Source Breakdown Voltage3,4
TEST CONDITIONS
Vgs(th)
UNITS
MIN
MAX
Vgs - 0V, Id = 1mA
200
-
V
Vgs = Vds, Id = 1.0mA
1.5
4.0
V
Bvdss
Gate-Threshold Voltage3,4
LIMITS
Gate-Body Leakage Forward2,3,4
Igss
Vgs = +20, Vds = 0V
-
100
nA
Zero-Gate Voltage Drain Current 3,4
Idss
Vgs = 0V, Vds = 160V
-
25
A
Rds(on)
Vgs = 12V, Ids = 1.6A
-
0.70
ohms
Drain-Source On-Resistance1,3,4
Notes:* for die products, the maximum current may be limited by packaging
1. Pulse test, 300us max
2. Absolute value
3. Gamma = 100 krads(Si)
4. Gamma irradiation bias at both Vgs = 10V, Vds = 0V and Vgs = 0V, Vds = 80% BVdss
SEE (SINGLE-EVENT-EFFECTS)
CHARACTERISTICS
Single Event Effects - Safe Operating Area
SYMBOL
ENVIRONMENT1
ION
SPECIES
ENERGY
(MeV)
TYPICAL LET
(MEv/MG/CM2)
TYPICAL
RANGE
(u)
APPLIED
VGS BIAS
(V)
MAX
VDS
BIAS
(V)2
Kr
906
30
113
-10
200
Xe
1232
59
99
-5
200
Notes:
1. Fluence = 1E6 ions/cm2 (typical), T = 25oC
2. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture
(SEGR).
DIE FEATURES
 Die Size
- 0.099" x 0.080" (2.03mm x 2.51mm) Max
 Gate Pad
- 567m x 261.5m
 Source Pad
- 1260m x 1554.5m
 Die Thickness
- 14 mils
 Top Metal
- 40kA (+10%) A1 1% Si
 Back Metal
- Ti(2kA)NiV(10kA)Ag(2kA) (+10%)
2
ELECTRICAL TESTING AT WAFER PROBE:
CURRENT
LOWER
LIMIT
VOLTAGE
igss
Vgs=5V
100
igss
Vgs=20V
100
igss
Vgs-30V
1
idss
Vds=160V
2
25
uA
idss
Vds=200V
10
1000
uA
bvdss
Ids=1mA
UPPER
LIMIT
LOWER
SPEC
ITEM
110
UPPER
SPEC
UNIT
uA
100
nA
uA
200
V
rdon
Vgs=12V
Ids=0.5A
700
700
m
rdon
Vgs=12V
Ids=2A
700
700
m
vsd
Isd=2A
0.6
1.2
0.6
1.8
V
vth
Ids=250A
2.7
3.9
2.00
4.00
V
100
nA
igssr
Vgs=-20V
100
igssr
Vgs=-30V
1
uA
idss
Vds=200V
10
uA
igss
Vgs=20V
100
100
nA
AEROFLEX RAD RAD7210-NCx PART NUMBERING:
PART #
BREAKDOWN
POTENTIAL
(V)
RDSON
(m)
DRAIN
CURRENT
(A)
GATE
CHARGE
(nC)
TID LEVEL
(krad(SI)
SEE
Die
size
PKG
SCREENING
RAD7210-NCP
200
700
2.0
15
100
Xe
1
Bare
Die
Prototype
RAD7210-NCE
200
700
2.0
15
100
Xe
1
Bare
Die
EM
RAD7210-NCS
200
700
2.0
15
100
Xe
1
Bare
Die
Space
3
Aeroflex RAD- Datasheet Definition
Advanced Datasheet - Product In Development
Preliminary Datasheet - Shipping Prototypes
Datasheet - Class S Compliant, QML or JAN
COLORADO
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Tel: 603-888-3975
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Tel: 321-951-4164
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Tel: 949-362-2260
Fax: 949-362-2266
CENTRAL
Tel: 719-594-8017
Fax: 719-594-8468
www.aeroflex.com
[email protected]
Aeroflex RAD (Aeroflex) reserves the right to make changes
to any products and services herein at any time without notice.
Consult Aeroflex or an authorized sales representative to
verify that the information in this data sheet is current before
using this product. Aeroflex does not assume any
responsibility or liability arising out of the application or use
of any product or service described herein, except as
expressly agreed to in writing by Aeroflex; nor does the
purchase, lease, or use of a product or service from Aeroflex
convey a license under any patent rights, copyrights,
trademark rights, or any other of the intellectual rights of
Aeroflex or of third parties.
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