Am29F016D

Am29F016D
Am29F016D
Data Sheet
Am29F016D Cover Sheet
The following document contains information on Spansion memory products.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
made are the result of normal data sheet improvement and are noted in the document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number 21444
Revision E
Amendment 9
Issue Date November 16, 2009
D at a
S hee t
This page left intentionally blank.
2
Am29F016D
21444_E9 November 16, 2009
DATA SHEET
Am29F016D
16 Megabit (2 M x 8-Bit)
CMOS 5.0 Volt-only, Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
■ 5.0 V ± 10%, single power supply operation
— Minimizes system level power requirements
■ Manufactured on 0.23 µm process technology
— Compatible with 0.5 µm Am29F016 and 0.32 µm
Am29F016B devices
■ High performance
— Access times as fast as 70 ns
■ Low power consumption
— 25 mA typical active read current
— 30 mA typical program/erase current
— 1 µA typical standby current (standard access
time to active mode)
■ Flexible sector architecture
■ Unlock Bypass Program Command
— Reduces overall programming time when
issuing multiple program command sequences
■ Minimum 1,000,000 program/erase cycles per
sector guaranteed
■ 20-year data retention at 125° C
— Reliable operation for the life of the system
■ Package options
— 48-pin and 40-pin TSOP
— 44-pin SO
— Known Good Die (KGD)
(see publication number 21551)
■ Compatible with JEDEC standards
— 32 uniform sectors of 64 Kbytes each
— Pinout and software compatible with
single-power-supply Flash standard
— Any combination of sectors can be erased
— Superior inadvertent write protection
— Supports full chip erase
— Group sector protection:
A hardware method of locking sector groups to
prevent any program or erase operations within
that sector group
Temporary Sector Group Unprotect allows code
changes in previously locked sectors
■ Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically
writes and verifies bytes at specified addresses
■ Data# Polling and toggle bits
— Provides a software method of detecting
program or erase cycle completion
■ Ready/Busy# output (RY/BY#)
— Provides a hardware method for detecting
program or erase cycle completion
■ Erase Suspend/Erase Resume
— Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector,
then resumes the erase operation
■ Hardware reset pin (RESET#)
— Resets internal state machine to the read mode
This Data Sheet states AMD’s current technical specifications regarding the Products described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 21444 Rev: E Amendment: 9
Issue Date: November 16, 2009
D A T A
S H E E T
GENERAL DESCRIPTION
The Am29F016D is a 16 Mbit, 5.0 volt-only Flash memory organized as 2,097,152 bytes. The 8 bits of data
appear on DQ0–DQ7. The Am29F016D is offered in
48-pin TSOP, 40-pin TSOP, and 44-pin SO packages.
The device is also available in Known Good Die (KGD)
form. For more information, refer to publication number
21551. This device is designed to be programmed
in-system with the standard system 5.0 volt VCC supply.
A 12.0 volt VPP is not required for program or erase
operations. The device can also be programmed in
standard EPROM programmers.
This device is manufactured using AMD’s 0.23 µm process technology, and offers all the features and
benefits of the Am29F016, which was manufactured
using 0.5 µm process technology.
The standard device offers access times of 70 and
90 ns, allowing high-speed microprocessors to operate
without wait states. To eliminate bus contention, the device has separate chip enable (CE#), write enable
(WE#), and output enable (OE#) controls.
The device requires only a single 5.0 volt power supply for both read and write functions. Internally
generated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-supply Flash standard. Commands are written to the command register using
standard microprocessor write timings. Register contents serve as input to an internal state-machine that
controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed
for the programming and erase operations. Reading
data out of the device is similar to reading from other
Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin.
Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase
2
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper cell margin.
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle has
been completed, the device is ready to read array data
or accept another command.
The sector erase architecture allows memory sectors
to be erased and reprogrammed without affecting the
data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
VCC detector that automatically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of memory. This can be achieved via programming equipment.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to the
system reset circuitry. A system reset would thus also
reset the device, enabling the system microprocessor
to read the boot-up firmware from the Flash memory.
The system can place the device into the standby
mode. Power consumption is greatly reduced in
this mode.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunneling.
The data is programmed using hot electron injection.
Am29F016D
21444E9 November 16, 2009
D A T A
S H E E T
TABLE OF CONTENTS
Product Selector Guide . . . . . . . . . . . . . . . . . . . . .
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . .
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . .
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Ordering Information . . . . . . . . . . . . . . . . . . . . . . .
Device Bus Operations . . . . . . . . . . . . . . . . . . . . .
4
4
5
6
6
7
8
Table 1. Am29F016D Device Bus Operations .................................. 8
Requirements for Reading Array Data .....................................
Writing Commands/Command Sequences ..............................
Program and Erase Operation Status ......................................
Standby Mode ..........................................................................
RESET#: Hardware Reset Pin .................................................
Output Disable Mode................................................................
8
8
9
9
9
9
Table 2. Sector Address Table........................................................ 10
Autoselect Mode..................................................................... 11
Table 3. Am29F016D Autoselect Codes (High Voltage Method).... 11
Sector Group Protection/Unprotection.................................... 11
Table 4. Sector Group Addresses................................................... 11
Temporary Sector Group Unprotect ....................................... 11
Figure 1. Temporary Sector Group Unprotect Operation............... 12
Hardware Data Protection ...................................................... 12
Low VCC Write Inhibit ...................................................................... 12
Write Pulse “Glitch” Protection........................................................ 12
Logical Inhibit .................................................................................. 12
Power-Up Write Inhibit .................................................................... 12
DQ7: Data# Polling................................................................. 20
Figure 4. Data# Polling Algorithm ................................................. 20
RY/BY#: Ready/Busy#............................................................
DQ6: Toggle Bit I ....................................................................
DQ2: Toggle Bit II ...................................................................
Reading Toggle Bits DQ6/DQ2...............................................
DQ5: Exceeded Timing Limits ................................................
DQ3: Sector Erase Timer .......................................................
Figure 5. Toggle Bit Algorithm....................................................... 22
Table 10. Write Operation Status................................................... 23
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . 24
Figure 6. Maximum Negative Overshoot Waveform ..................... 24
Figure 7. Maximum Positive Overshoot Waveform....................... 24
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . . 24
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 25
TTL/NMOS Compatible .......................................................... 25
CMOS Compatible.................................................................. 25
Test Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 8. Test Setup..................................................................... 26
Table 11. Test Specifications ......................................................... 26
Key to Switching Waveforms. . . . . . . . . . . . . . . . 26
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 27
Read-only Operations............................................................. 27
Figure 9. Read Operation Timings ................................................ 27
Figure 10. RESET# Timings ......................................................... 28
Erase/Program Operations..................................................... 29
Common Flash Memory Interface (CFI) . . . . . . . 13
Figure 11. Program Operation Timings.........................................
Figure 12. Chip/Sector Erase Operation Timings .........................
Figure 13. Data# Polling Timings (During Embedded Algorithms)
Figure 14. Toggle Bit Timings (During Embedded Algorithms).....
Figure 15. DQ2 vs. DQ6................................................................
Figure 16. Temporary Sector Group Unprotect Timings ...............
Table 5. CFI Query Identification String .......................................... 13
Table 6. System Interface String..................................................... 13
Table 7. Device Geometry Definition .............................................. 14
Table 8. Primary Vendor-Specific Extended Query ........................ 14
Command Definitions . . . . . . . . . . . . . . . . . . . . . 15
Reading Array Data ................................................................ 15
Reset Command..................................................................... 15
Autoselect Command Sequence ............................................ 15
Byte Program Command Sequence....................................... 15
Unlock Bypass Command Sequence.............................................. 16
Figure 2. Program Operation ......................................................... 16
Chip Erase Command Sequence ........................................... 16
Sector Erase Command Sequence ........................................ 17
Erase Suspend/Erase Resume Commands........................... 17
Figure 3. Erase Operation.............................................................. 18
Command Definitions ............................................................. 19
Table 9. Am29F016D Command Definitions................................... 19
21
21
21
21
22
22
30
31
32
32
33
33
Erase and Program Operations.............................................. 34
Alternate CE# Controlled Writes .................................................... 34
Figure 17. Alternate CE# Controlled Write Operation Timings ..... 35
Erase and Programming Performance . . . . . . . 36
Latchup Characteristics . . . . . . . . . . . . . . . . . . . . 36
TSOP and SO Pin Capacitance . . . . . . . . . . . . . . 36
Data Retention. . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 37
TS 040—40-Pin Standard Thin Small Outline Package ......... 37
TS 048—48-Pin Standard Thin Small Outline Package ......... 38
SO 044—44-Pin Small Outline Package ................................ 39
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 40
Write Operation Status . . . . . . . . . . . . . . . . . . . . 20
November 16, 2009 21444E9
Am29F016D
3
D A T A
S H E E T
PRODUCT SELECTOR GUIDE
Family Part Number
Am29F016D
Speed Options (VCC = 5.0 V ± 10%)
-70
-90
Max Access Time (ns)
70
90
CE# Access (ns)
70
90
OE# Access (ns)
40
40
Note: See the AC Characteristics section for more information.
BLOCK DIAGRAM
DQ0–DQ7
Sector Switches
VCC
VSS
Erase Voltage
Generator
RY/BY#
Input/Output
Buffers
RESET#
WE#
State
Control
Command
Register
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
VCC Detector
Address Latch
STB
Timer
A0–A20
4
Am29F016D
STB
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
21444E9 November 16, 2009
D A T A
S H E E T
CONNECTION DIAGRAMS
This device is also available in Known Good Die (KGD) form. Refer to publication number 21551 for
more information.
A19
A18
A17
A16
A15
A14
A13
A12
CE#
VCC
NC
RESET#
A11
A10
A9
A8
A7
A6
A5
A4
NC
NC
A19
A18
A17
A16
A15
A14
A13
A12
CE#
VCC
NC
RESET#
A11
A10
A9
A8
A7
A6
A5
A4
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
November 16, 2009 21444E9
40-Pin Standard TSOP
48-Pin Standard TSOP
Am29F016D
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
A20
NC
WE#
OE#
RY/BY#
DQ7
DQ6
DQ5
DQ4
VCC
VSS
VSS
DQ3
DQ2
DQ1
DQ0
A0
A1
A2
A3
48 NC
47 NC
46 A20
45 NC
44 WE#
43 OE#
42 RY/BY#
41 DQ7
40 DQ6
39 DQ5
38 DQ4
37 VCC
36 VSS
35 VSS
34 DQ3
33 DQ2
32 DQ1
31 DQ0
30 A0
29 A1
28 A2
27 A3
26 NC
25 NC
5
D A T A
S H E E T
CONNECTION DIAGRAMS
This device is also available in Known Good Die (KGD) form. Refer to publication number 21551 for
more information.
NC
RESET#
A11
A10
A9
A8
A7
A6
A5
A4
NC
NC
A3
A2
A1
A0
DQ0
DQ1
DQ2
DQ3
VSS
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
PIN CONFIGURATION
A0–A20
=
SO
8 Data Inputs/Outputs
CE#
=
Chip Enable
WE#
=
Write Enable
OE#
=
Output Enable
RESET#
=
Hardware Reset Pin, Active Low
RY/BY#
=
Ready/Busy Output
VCC
=+5.0 V single power supply
(see Product Selector Guide for
device speed ratings and voltage
supply tolerances)
VSS
=
Device Ground
NC
=
Pin Not Connected Internally
VCC
CE#
A12
A13
A14
A15
A16
A17
A18
A19
NC
NC
A20
NC
WE#
OE#
RY/BY#
DQ7
DQ6
DQ5
DQ4
VCC
LOGIC SYMBOL
21 Addresses
DQ0–DQ7 =
6
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
21
A0–A20
8
DQ0–DQ7
CE#
OE#
WE#
RESET#
Am29F016D
RY/BY#
21444E9 November 16, 2009
D A T A
S H E E T
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is
formed by a combination of the following:
Am29F016D
-70
E
F
TEMPERATURE RANGE
I
= Industrial (–40° C to +85° C)
F = Industrial (–40° C to +85° C)with Pb-free package
PACKAGE TYPE
E = 48-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 048)
E4 = 40-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 040)
S = 44-Pin Small Outline Package (SO 044)
This device is also available in Known Good Die (KGD) form. See publication number
21551 for more information.
SPEED OPTION
See Product Selector Guide and Valid Combinations
DEVICE NUMBER/DESCRIPTION
Am29F016D
16 Megabit (2 M x 8-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory
5.0 V Read, Program, and Erase
Valid Combinations
Valid Combinations
AM29F016D-70
EI, EF, E4F, SF, E4I, SI
AM29F016D-90
EI, E4I, SI, EF, E4F, SF
November 16, 2009 21444E9
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
Am29F016D
7
D A T A
S H E E T
DEVICE BUS OPERATIONS
This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register itself does not occupy any addressable memor y
location. The register is composed of latches that store
the commands, along with the address and data information needed to execute the command. The contents
of the register serve as inputs to the internal state machine. The state machine outputs dictate the function of
the device. The appropriate device bus operations
table lists the inputs and control levels required, and the
resulting output. The following subsections describe
each of these operations in further detail.
Table 1. Am29F016D Device Bus Operations
Operation
CE#
OE#
WE#
RESET#
A0–A20
DQ0–DQ7
Read
L
L
H
H
AIN
DOUT
Write
L
H
L
H
AIN
DIN
VCC ± 0.5 V
X
X
VCC ± 0.5 V
X
High-Z
TTL Standby
H
X
X
H
X
High-Z
Output Disable
L
H
H
H
X
High-Z
Hardware Reset
X
X
X
L
X
High-Z
Temporary Sector Unprotect
(See Note)
X
X
X
VID
AIN
DIN
CMOS Standby
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, DIN = Data In, DOUT = Data Out, AIN = Address In
Note: See the sections on Sector Group Protection and Temporary Sector Unprotect for more information
Requirements for Reading Array Data
Writing Commands/Command Sequences
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output control
and gates array data to the output pins. WE# should remain at VIH.
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
The internal state machine is set for reading array
data upon device power-up, or after a hardware reset.
This ensures that no spurious alteration of the memory content occurs during the power transition. No
command is necessary in this mode to obtain array
data. Standard microprocessor read cycles that assert valid addresses on the device address inputs
produce valid data on the device data outputs. The
device remains enabled for read access until the
command register contents are altered.
See “Reading Array Data” for more information. Refer
to the AC Read Operations table for timing specifications and to the Read Operations Timings diagram for
the timing waveforms. ICC1 in the DC Characteristics
table represents the active current specification for
reading array data.
8
An erase operation can erase one sector, multiple sectors, or the entire device. The Sector Address Tables
indicate the address space that each sector occupies.
A “sector address” consists of the address bits required
to uniquely select a sector. See the “Command Definitions” section for details on erasing a sector or the
entire chip, or suspending/resuming the erase
operation.
After the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in this
mode. Refer to the “Autoselect Mode” and “Autoselect
Command Sequence” sections for more information.
ICC2 in the DC Characteristics table represents the active current specification for the write mode. The “AC
Characteristics” section contains timing specification
tables and timing diagrams for write operations.
Am29F016D
21444E9 November 16, 2009
D A T A
Program and Erase Operation Status
During an erase or program operation, the system may
check the status of the operation by reading the status
bits on DQ7–DQ0. Standard read cycle timings and ICC
read specifications apply. Refer to “Write Operation
Status” for more information, and to each AC Characteristics section for timing diagrams.
Standby Mode
When the system is not reading or writing to the device,
it can place the device in the standby mode. In this
mode, current consumption is greatly reduced, and the
outputs are placed in the high impedance state, independent of the OE# input.
The device enters the CMOS standby mode when CE#
and RESET# pins are both held at VCC ± 0.5 V. (Note
that this is a more restricted voltage range than VIH.)
The device enters the TTL standby mode when CE#
and RESET# pins are both held at VIH. The device requires standard access time (tCE) for read access when
the device is in either of these standby modes, before it
is ready to read data.
The device also enters the standby mode when the RESET# pin is driven low. Refer to the next section,
“RESET#: Hardware Reset Pin”.
If the device is deselected during erasure or programming, the device draws active current until the
operation is completed.
In the DC Characteristics tables, ICC3 represents the
standby current specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the system
drives the RESET# pin low for at least a period of tRP,
November 16, 2009 21444E9
S H E E T
the device immediately terminates any operation in
progress, tristates all data output pins, and ignores all
read/write attempts for the duration of the RESET#
pulse. The device also resets the internal state machine to reading array data. The operation that was
interrupted should be reinitiated once the device is
ready to accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VIL, the device enters
the TTL standby mode; if RESET# is held at VSS ±
0.5 V, the device enters the CMOS standby mode.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firmware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
time of tREADY (during Embedded Algorithms). The
system can thus monitor RY/BY# to determine whether
the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset operation is completed
within a time of tREADY (not during Embedded Algorithms). The system can read data t RH after the
RESET# pin returns to VIH.
Refer to the AC Characteristics tables for RESET# parameters and timing diagram.
Output Disable Mode
When the OE# input is at VIH, output from the device is
disabled. The output pins are placed in the high impedance state.
Am29F016D
9
D A T A
S H E E T
Table 2.
Sector Address Table
Sector
A20
A19
A18
A17
A16
Address Range
SA0
0
0
0
0
0
000000h-00FFFFh
SA1
0
0
0
0
1
010000h-01FFFFh
SA2
0
0
0
1
0
020000h-02FFFFh
SA3
0
0
0
1
1
030000h-03FFFFh
SA4
0
0
1
0
0
040000h-04FFFFh
SA5
0
0
1
0
1
050000h-05FFFFh
SA6
0
0
1
1
0
060000h-06FFFFh
SA7
0
0
1
1
1
070000h-07FFFFh
SA8
0
1
0
0
0
080000h-08FFFFh
SA9
0
1
0
0
1
090000h-09FFFFh
SA10
0
1
0
1
0
0A0000h-0AFFFFh
SA11
0
1
0
1
1
0B0000h-0BFFFFh
SA12
0
1
1
0
0
0C0000h-0CFFFFh
SA13
0
1
1
0
1
0D0000h-0DFFFFh
SA14
0
1
1
1
0
0E0000h-0EFFFFh
SA15
0
1
1
1
1
0F0000h-0FFFFFh
SA16
1
0
0
0
0
100000h-10FFFFh
SA17
1
0
0
0
1
110000h-11FFFFh
SA18
1
0
0
1
0
120000h-12FFFFh
SA19
1
0
0
1
1
130000h-13FFFFh
SA20
1
0
1
0
0
140000h-14FFFFh
SA21
1
0
1
0
1
150000h-15FFFFh
SA22
1
0
1
1
0
160000h-16FFFFh
SA23
1
0
1
1
1
170000h-17FFFFh
SA24
1
1
0
0
0
180000h-18FFFFh
SA25
1
1
0
0
1
190000h-19FFFFh
SA26
1
1
0
1
0
1A0000h-1AFFFFh
SA27
1
1
0
1
1
1B0000h-1BFFFFh
SA28
1
1
1
0
0
1C0000h-1CFFFFh
SA29
1
1
1
0
1
1D0000h-1DFFFFh
SA30
1
1
1
1
0
1E0000h-1EFFFFh
SA31
1
1
1
1
1
1F0000h-1FFFFFh
Note: All sectors are 64 Kbytes in size.
10
Am29F016D
21444E9 November 16, 2009
D A T A
Autoselect Mode
The autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equipment
to automatically match a device to be programmed with
its corresponding programming algorithm. However,
the autoselect codes can also be accessed in-system
through the command register.
When using programming equipment, the autoselect
mode requires VID (11.5 V to 12.5 V) on address pin
A9. Address pins A6, A1, and A0 must be as shown in
Autoselect Codes (High Voltage Method) table. In addition, when verifying sector protection, the sector
Table 3.
Description
S H E E T
address must appear on the appropriate highest order
address bits. Refer to the corresponding Sector Address Tables. The Command Definitions table shows
the remaining address bits that are don’t care. When all
necessary bits have been set as required, the programming equipment may then read the corresponding
identifier code on DQ7–DQ0.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in the Command Definitions table. This method does not require VID. See
“Command Definitions” for details on using the autoselect mode.
Am29F016D Autoselect Codes (High Voltage Method)
CE# OE# WE# A20-A18 A17-A10
A9
A8-A7
A6
A5-A2
A1
A0
DQ7-DQ0
Manufacturer ID:
AMD
L
L
H
X
X
VID
X
VIL
X
VIL
VIL
01h
Device ID:
Am29F016D
L
L
H
X
X
VID
X
VIL
X
VIL
VIH
ADh
Sector Group
Protection
Verification
L
L
H
Sector
Group
Address
X
VID
X
VIL
X
VIH
VIL
01h (protected)
00h (unprotected)
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
Sector Group Protection/Unprotection
The hardware sector group protection feature disables both program and erase operations in any
sector group. Each sector group consists of four adjacent sectors. Table 4 shows how the sectors are
grouped, and the address range that each sector
group contains. The hardware sector group unprotection feature re-enables both program and erase
operations in previously protected sector groups.
Sector group protection/unprotection must be implemented using programming equipment. The procedure
requires a high voltage (VID) on address pin A9 and the
control pins. Details on this method are provided in a
supplement, publication number 23922. Contact an
AMD representative to obtain a copy of the appropriate
document. Note that the sector group protection and
unprotection scheme differs from that used with the
p r ev i o u s ve r s i o n s o f t h i s d ev i c e, n a m e l y t h e
Am29F016B and Am29F016.
The device is shipped with all sector groups unprotected. AMD offers the option of programming and
protecting sector groups at its factory prior to shipping
the device through AMD’s ExpressFlash™ Service.
Contact an AMD representative for details.
November 16, 2009 21444E9
It is possible to determine whether a sector group is
protected or unprotected. See “Autoselect Mode” for
details.
Table 4.
Sector Group Addresses
Sector
Group
A20
A19
A18
Sectors
SGA0
0
0
0
SA0–SA3
SGA1
0
0
1
SA4–SA7
SGA2
0
1
0
SA8–SA11
SGA3
0
1
1
SA12–SA15
SGA4
1
0
0
SA16–SA19
SGA5
1
0
1
SA20–SA23
SGA6
1
1
0
SA24–SA27
SGA7
1
1
1
SA28–SA31
Temporary Sector Group Unprotect
This feature allows temporary unprotection of previously protected sector groups to change data
in-system. The Sector Group Unprotect mode is activated by setting the RESET# pin to VID. During this
mode, formerly protected sector groups can be programmed or erased by selecting the sector group
Am29F016D
11
D A T A
addresses. Once VID is removed from the RESET#
pin, all the previously protected sector groups are
protected again. Figure 1 shows the algorithm, and
the Temporary Sector Group Unprotect diagram (Figure 16) shows the timing waveforms, for this feature.
START
S H E E T
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to the Command Definitions table). In addition, the following hardware data
protection measures prevent accidental erasure or programming, which might otherwise be caused by
spurious system level signals during VCC power-up and
power-down transitions, or from system noise.
Low VCC Write Inhibit
RESET# = VID
(Note 1)
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register and
all internal program/erase circuits are disabled, and the
device resets. Subsequent writes are ignored until VCC
is greater than VLKO. The system must provide the
proper signals to the control pins to prevent unintentional writes when VCC is greater than VLKO.
Perform Erase or
Program Operations
RESET# = VIH
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or
WE# do not initiate a write cycle.
Temporary
Sector Group Unprotect
Completed (Note 2)
Logical Inhibit
Write cycles are inhibited by holding any one of OE#
= VIL, CE# = VIH or WE# = VIH. To initiate a write cycle, CE# and WE# must be a logical zero while OE#
is a logical one.
Notes:
1. All protected sector groups unprotected.
2. All previously protected sector groups are protected
once again.
Power-Up Write Inhibit
Figure 1. Temporary Sector Group Unprotect
Operation
12
If WE# = CE# = VIL and OE# = VIH during power up, the
device does not accept commands on the rising edge
of WE#. The internal state machine is automatically
reset to reading array data on power-up.
Am29F016D
21444E9 November 16, 2009
D A T A
COMMON FLASH MEMORY INTERFACE
(CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of dev i c e s. S o f t wa r e s u p p o r t c a n t h e n b e d ev i c e independent, JEDEC ID-independent, and forwardand backward-compatible for the specified flash device
families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h, any time the device is ready to read array data.
Table 5.
S H E E T
The system can read CFI information at the addresses
given in Tables 5–8. To terminate reading CFI data, the
system must write the reset command.
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 5–8. The system must write the reset command to return the device
to the autoselect mode.
For further information, please refer to the CFI Specification and CFI Publication 100, available via the World
Wide Web at http://www.amd.com/products/nvd/overv i ew / c f i . h t m l . A l t e r n a t i ve l y, c o n t a c t a n A M D
representative for copies of these documents.
CFI Query Identification String
Addresses
Data
Description
10h
11h
12h
51h
52h
59h
Query Unique ASCII string “QRY”
13h
14h
02h
00h
Primary OEM Command Set
15h
16h
40h
00h
Address for Primary Extended Table
17h
18h
00h
00h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
00h
00h
Address for Alternate OEM Extended Table (00h = none exists)
Table 6.
System Interface String
Addresses
Data
1Bh
45h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
55h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
00h
VPP Min. voltage (00h = no VPP pin present)
1Eh
00h
VPP Max. voltage (00h = no VPP pin present)
1Fh
03h
Typical timeout per single byte/word write 2N µs
20h
00h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
0Ah
Typical timeout per individual block erase 2N ms
22h
00h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
05h
Max. timeout for byte/word write 2N times typical
24h
00h
Max. timeout for buffer write 2N times typical
25h
04h
Max. timeout per individual block erase 2N times typical
26h
00h
Max. timeout for full chip erase 2N times typical (00h = not supported)
November 16, 2009 21444E9
Description
Am29F016D
13
D A T A
Table 7.
Addresses
Device Geometry Definition
Data
Description
2N
27h
15h
Device Size =
28h
29h
00h
00h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
00h
00h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
01h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
1Fh
00h
00h
01h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
Table 8.
14
S H E E T
byte
Primary Vendor-Specific Extended Query
Addresses
Data
Description
40h
41h
42h
50h
52h
49h
Query-unique ASCII string “PRI”
43h
31h
Major version number, ASCII
44h
31h
Minor version number, ASCII
45h
00h
Address Sensitive Unlock
0 = Required, 1 = Not Required
46h
02h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
04h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
01h
Sector Temporary Unprotect: 00 = Not Supported, 01 = Supported
49h
04h
Sector Protect/Unprotect scheme
01 = 29F040 mode, 02 = 29F016 mode,
03 = 29F400 mode, 04 = 29LV800A mode
4Ah
00h
Simultaneous Operation: 00 = Not Supported, 01 = Supported
4Bh
00h
Burst Mode Type: 00 = Not Supported, 01 = Supported
4Ch
00h
Page Mode Type: 00 = Not Supported, 01 = 4 Word Page,
02 = 8 Word Page
4Dh
00h
ACC supply minimum
4Eh
00h
ACC supply maximum
4Fh
00h
Top/bottom boot sector flag
2 = bottom, 3 = top. If address 2Ch = 01h, ignore this field
Am29F016D
21444E9 November 16, 2009
D A T A
S H E E T
COMMAND DEFINITIONS
Writing specific address and data commands or sequences into the command register initiates device
operations. The Command Definitions table defines the
valid register command sequences. Writing incorrect
address and data values or writing them in the improper sequence resets the device to reading array
data.
All addresses are latched on the falling edge of WE# or
CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in the
“AC Characteristics” section.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Embedded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The system can read array data using the standard read
timings, except that if it reads at an address within
erase-suspended sectors, the device outputs status
data. After completing a programming operation in the
Erase Suspend mode, the system may once again
read array data with the same exception. See “Erase
Suspend/Erase Resume Commands” for more information on this mode.
The system must issue the reset command to re-enable the device for reading array data if DQ5 goes high,
or while in the autoselect mode. See the “Reset Command” section, next.
See also “Requirements for Reading Array Data” in the
“Device Bus Operations” section for more information.
The Read Operations table provides the read parameters, and Read Operation Timings diagram shows the
timing diagram.
Reset Command
Writing the reset command to the device resets the device to reading array data. Address bits are don’t care
for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence
before programming begins. This resets the device to
reading array data (also applies to programming in
Erase Suspend mode). Once programming begins,
November 16, 2009 21444E9
however, the device ignores reset commands until the
operation is complete.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command must
be written to return to reading array data (also applies
to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to reading array data (also applies during Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and devices codes,
and determine whether or not a sector is protected.
The Command Definitions table shows the address
and data requirements. This method is an alternative to
that shown in the Autoselect Codes (High Voltage
Method) table, which is intended for PROM programmers and requires VID on address bit A9.
The autoselect command sequence is initiated by
writing two unlock cycles, followed by the autoselect
command. The device then enters the autoselect
mode, and the system may read at any address any
number of times, without initiating another command
sequence.
A read cycle at address XX00h retrieves the manufacturer code. A read cycle at address XX01h returns the
device code. A read cycle containing a sector address
(SA) and the address 02h in returns 01h if that sector
is protected, or 00h if it is unprotected. Refer to the
Sector Address tables for valid sector addresses.
The system must write the reset command to exit the
autoselect mode and return to reading array data.
Byte Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up
command. The program address and data are written
next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further
controls or timings. The device automatically provides
internally generated program pulses and verify the programmed cell margin. The Command Definitions take
shows the address and data requirements for the byte
program command sequence.
When the Embedded Program algorithm is complete,
the device then returns to reading array data and addresses are no longer latched. The system can
determine the status of the program operation by using
DQ7, DQ6, or RY/BY#. See “Write Operation Status”
for information on these status bits.
Am29F016D
15
D A T A
S H E E T
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the programming operation. The program command sequence
should be reinitiated once the device has reset to reading array data, to ensure data integrity.
START
Write Program
Command Sequence
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from a “0” back to a “1”. Attempting to do so may halt
the operation and set DQ5 to “1”, or cause the Data#
Polling algorithm to indicate the operation was successful. However, a succeeding read will show that the
data is still “0”. Only erase operations can convert a “0”
to a “1”.
Embedded
Program
algorithm
in progress
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program bytes or words to the device faster than using the
standard program command sequence. The unlock bypass command sequence is initiated by first writing two
unlock cycles. This is followed by a third write cycle
containing the unlock bypass command, 20h. The device then enters the unlock bypass mode. A two-cycle
unlock bypass program command sequence is all that
is required to program in this mode. The first cycle in
this sequence contains the unlock bypass program
command, A0h; the second cycle contains the program
address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial
two unlock cycles required in the standard program
command sequence, resulting in faster total programming time. Table 9 shows the requirements for the
command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the data
90h; the second cycle the data 00h. Addresses are
don’t care for both cycles. The device then returns to
reading array data.
16
Data Poll
from System
Verify Data?
No
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
Note:
See the appropriate Command Definitions table for program
command sequence.
Figure 2.
Program Operation
Chip Erase Command Sequence
Chip erase is a six-bus-cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings during these operations. The Command
Definitions table shows the address and data requirements for the chip erase command sequence.
Am29F016D
21444E9 November 16, 2009
D A T A
Any commands written to the chip during the Embedded Erase algorithm are ignored. Note that a hardware
reset during the chip erase operation immediately terminates the operation. The Chip Erase command
sequence should be reinitiated once the device has returned to reading array data, to ensure data integrity.
The system can determine the status of the erase
operation by using DQ7, DQ6, DQ2, or RY/BY#. See
“Write Operation Status” for information on these
status bits. When the Embedded Erase algorithm is
complete, the device returns to reading array data
and addresses are no longer latched.
Figure 3 illustrates the algorithm for the erase operation. See the Erase/Program Operations tables in “AC
Characteristics” for parameters, and to the Chip/Sector
Erase Operation Timings for timing waveforms.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two
additional unlock write cycles are then followed by the
address of the sector to be erased, and the sector
erase command. The Command Definitions table
shows the address and data requirements for the sector erase command sequence.
The device does not require the system to preprogram
the memory prior to erase. The Embedded Erase algorithm automatically programs and verifies the sector for
an all zero data pattern prior to electrical erase. The
system is not required to provide any controls or timings during these operations.
After the command sequence is written, a sector erase
time-out of 50 µs begins. During the time-out period,
additional sector addresses and sector erase commands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time
between these additional cycles must be less than 50
µs, otherwise the last address and command might not
be accepted, and erasure may begin. It is recommended that processor interrupts be disabled during
this time to ensure all commands are accepted. The interrupts can be re-enabled after the last Sector Erase
command is written. If the time between additional sector erase commands can be assumed to be less than
50 µs, the system need not monitor DQ3. Any command other than Sector Erase or Erase Suspend
during the time-out period resets the device to
reading array data. The system must rewrite the command sequence and any additional sector addresses
and commands.
The system can monitor DQ3 to determine if the sector
erase timer has timed out. (See the “DQ3: Sector Erase
November 16, 2009 21444E9
S H E E T
Timer” section.) The time-out begins from the rising
edge of the final WE# pulse in the command sequence.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other commands
are ignored. Note that a hardware reset during the
sector erase operation immediately terminates the operation. The Sector Erase command sequence should
be reinitiated once the device has returned to reading
array data, to ensure data integrity.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses are
no longer latched. The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or
RY/BY#. Refer to “Write Operation Status” for information on these status bits.
Figure 3 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and to
the Sector Erase Operations Timing diagram for timing
waveforms.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. This command is valid only during the sector
erase operation, including the 50 µs time-out period
during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program algorithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the
time-out period and suspends the erase operation. Addresses are “don’t-cares” when writing the Erase
Suspend command.
When the Erase Suspend command is written during a
sector erase operation, the device requires a maximum
of 20 µs to suspend the erase operation. However,
when the Erase Suspend command is written during
the sector erase time-out, the device immediately terminates the time-out period and suspends the erase
operation.
After the erase operation has been suspended, the
system can read array data from or program data to
any sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Normal
read and write timings and command definitions apply.
Reading at any address within erase-suspended sectors produces status data on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
See “Write Operation Status” for information on these
status bits.
Am29F016D
17
D A T A
S H E E T
After an erase-suspended program operation is complete, the system can once again read array data within
non-suspended sectors. The system can determine
the status of the program operation using the DQ7 or
DQ6 status bits, just as in the standard program operation. See “Wr ite Operation Status” for more
information.
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend
mode and continue the sector erase operation. Further
writes of the Resume command are ignored. Another
Erase Suspend command can be written after the device has resumed erasing.
START
Write Erase
Command Sequence
Data Poll
from System
No
Embedded
Erase
algorithm
in progress
Data = FFh?
Yes
Erasure Completed
Notes:
1. See the appropriate Command Definitions table for erase command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Figure 3.
18
Erase Operation
Am29F016D
21444E9 November 16, 2009
D A T A
S H E E T
Command Definitions
Command
Sequence
(Note 1)
Cycles
Table 9.
Am29F016D Command Definitions
Bus Cycles (Notes 2–4)
First
Second
Addr
Data
Third
Fourth
Addr
Data
Addr
Data
Addr
Data
Fifth
Sixth
Addr
Data
Addr
Data
Read (Note 5)
1
RA
RD
Reset (Note 6)
1
XXX
F0
Manufacturer ID
4
555
AA
2AA
55
555
90
X00
01
Device ID
4
555
AA
2AA
55
555
90
X01
AD
Sector Group Protect
Verify (Note 8)
4
555
AA
2AA
55
555
90
SGA
X02
CFI Query (Note 9)
1
55
98
Program
4
555
AA
2AA
55
555
A0
PA
PD
Unlock Bypass
3
555
AA
2AA
55
555
20
Unlock Bypass Program (Note 10)
2
XXX
A0
PA
PD
Unlock Bypass Reset (Note 11)
2
XXX
90
XXX
00
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Erase Suspend (Note 9)
1
XXX
B0
Erase Resume (Note 10)
1
XXX
30
Autoselect
(Note 7)
XX00
XX01
Legend:
X = Don’t care
PD = Data to be programmed at location PA. Data latches on
the rising edge of WE# or CE# pulse, whichever happens first.
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed.
Addresses latch on the falling edge of the WE# or CE# pulse,
whichever happens later.
SA = Address of the sector to be verified (in autoselect mode)
or erased. Address bits A20–A16 select a unique sector.
SGA = Address of the sector group to be verified. Address bits
A20–A18 select a unique sector group.
Notes:
1. See Table 1 for description of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus
cycles are write operations.
4. Address bits A20–A11 are don’t cares for unlock and
command cycles, unless SA or PA required.
5. No unlock or command cycles required when reading
array data.
6. The Reset command is required to return to reading array
data when device is in the autoselect mode, or if DQ5
goes high (while the device is providing status data).
7. The fourth cycle of the autoselect command sequence is
a read cycle.
8. The data is 00h for an unprotected sector group and 01h
for a protected sector group.See “Autoselect Command
Sequence” for more information.
November 16, 2009 21444E9
9. Command is valid when device is ready to read array data
or when device is in autoselect mode.
10. The Unlock Bypass command is required prior to the
Unlock Bypass Program command.
11. The Unlock Bypass Reset command is required to return
to reading array data when the device is in the unlock
bypass mode.
12. The system may read and program in non-erasing
sectors, or enter the autoselect mode, when in the Erase
Suspend mode. The Erase Suspend command is valid
only during a sector erase operation.
13. The Erase Resume command is valid only during the
Erase Suspend mode.
Am29F016D
19
D A T A
S H E E T
WRITE OPERATION STATUS
The device provides several bits to determine the status of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7,
and RY/BY#. Table 10 and the following subsections
describe the functions of these bits. DQ7, RY/BY#, and
DQ6 each offer a method for determining whether a
program or erase operation is complete or in progress.
These three bits are discussed first.
rithms) figure in the “AC Characteristics” section
illustrates this.
Table 10 shows the outputs for Data# Polling on DQ7.
Figure 4 shows the Data# Polling algorithm.
START
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host
system whether an Embedded Algor ithm is in
progress or completed, or whether the device is in
Erase Suspend. Data# Polling is valid after the rising
edge of the final WE# pulse in the program or erase
command sequence.
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to
programming during Erase Suspend. When the Embedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid status
information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for approximately 2 µs, then the device returns to reading
array data.
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
No
No
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at
DQ7–DQ0 on the following read cycles. This is because DQ7 may cha nge asynch rono usly with
DQ0–DQ6 while Output Enable (OE#) is asserted low.
The Data# Polling Timings (During Embedded Algo-
20
DQ5 = 1?
Yes
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase algorithm is complete, or if the device enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
This is analogous to the complement/true datum output
described for the Embedded Program algorithm: the
erase function changes all the bits in a sector to “1”;
prior to this, the device outputs the “complement,” or
“0.” The system must provide an address within any of
the sectors selected for erasure to read valid status information on DQ7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data# Polling
on DQ7 is active for approximately 100 µs, then the device returns to reading array data. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the selected sectors that are protected.
Yes
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
Yes
No
FAIL
PASS
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within any
sector selected for erasure. During chip erase, a valid
address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Am29F016D
Figure 4.
Data# Polling Algorithm
21444E9 November 16, 2009
D A T A
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin that
indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing
or programming. (This includes programming in the
Erase Suspend mode.) If the output is high (Ready),
the device is ready to read array data (including during
the Erase Suspend mode), or is in the standby mode.
Table 10 shows the outputs for RY/BY#. The timing diagrams for read, reset, program, and erase shows the
relationship of RY/BY# to other signals.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete,
or whether the device has entered the Erase Suspend
mode. Toggle Bit I may be read at any address, and is
valid after the rising edge of the final WE# pulse in the
command sequence (prior to the program or erase operation), and during the sector erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle. (The system may use either OE# or
CE# to control the read cycles.) When the operation is
complete, DQ6 stops toggling.
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading
array data. If not all selected sectors are protected,
the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that
are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is erasesuspended. When the device is actively erasing (that is,
the Embedded Erase algorithm is in progress), DQ6
toggles. When the device enters the Erase Suspend
mode, DQ6 stops toggling. However, the system must
also use DQ2 to determine which sectors are erasing
or erase-suspended. Alternatively, the system can use
DQ7 (see the subsection on “DQ7: Data# Polling”).
If a program address falls within a protected sector,
DQ6 toggles for approximately 2 µs after the program
command sequence is written, then returns to reading
array data.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Program algorithm is complete.
November 16, 2009 21444E9
S H E E T
The Write Operation Status table shows the outputs for
Toggle Bit I on DQ6. Refer to Figure 5 for the toggle bit
algorithm, and to the Toggle Bit Timings figure in the
“AC Characteristics” section for the timing diagram.
The DQ2 vs. DQ6 figure shows the differences between DQ2 and DQ6 in graphical form. See also the
subsection on “DQ2: Toggle Bit II”.
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for erasure. (The system may use either OE# or CE# to
control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and
mode information. Refer to Table 10 to compare outputs for DQ2 and DQ6.
Figure 5 shows the toggle bit algorithm in flowchart
form, and the section “DQ2: Toggle Bit II” explains the
algorithm. See also the “DQ6: Toggle Bit I” subsection.
Refer to the Toggle Bit Timings figure for the toggle bit
timing diagram. The DQ2 vs. DQ6 figure shows the differences between DQ2 and DQ6 in graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 5 for the following discussion. Whenever the system initially begins reading toggle bit
status, it must read DQ7–DQ0 at least twice in a row
to determine whether a toggle bit is toggling. Typically,
a system would note and store the value of the toggle
bit after the first read. After the second read, the system would compare the new value of the toggle bit
with the first. If the toggle bit is not toggling, the device
has completed the program or erase operation. The
system can read array data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the
system also should note whether the value of DQ5 is
high (see the section on DQ5). If it is, the system
should then determine again whether the toggle bit is
toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer
toggling, the device has successfully completed the
program or erase operation. If it is still toggling, the
device did not complete the operation successfully, and
Am29F016D
21
D A T A
the system must write the reset command to return to
reading array data.
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has not
gone high. The system may continue to monitor the
toggle bit and DQ5 through successive read cycles, determining the status as described in the previous
paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start
at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 5).
S H E E T
erase command. If DQ3 is high on the second status
check, the last command might not have been accepted. Table 10 shows the outputs for DQ3.
START
Read DQ7–DQ0
DQ5: Exceeded Timing Limits
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1.” This is a failure
condition that indicates the program or erase cycle was
not successfully completed.
The DQ5 failure condition may appear if the system
tries to program a “1” to a location that is previously programmed to “0.” Only an erase operation can change
a “0” back to a “1.” Under this condition, the device
halts the operation, and when the operation has exceeded the timing limits, DQ5 produces a “1.”
Read DQ7–DQ0
(Note
Toggle Bit
= Toggle?
No
Yes
Under both these conditions, the system must issue the
reset command to return the device to reading array
data.
No
DQ5 = 1?
Yes
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not an
erase operation has begun. (The sector erase timer
does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire timeout also applies after each additional sector erase
command. When the time-out is complete, DQ3
switches from “0” to “1.” The system may ignore DQ3
if the system can guarantee that the time between additional sector erase commands will always be less
than 50 µs. See also the “Sector Erase Command Sequence” section.
After the sector erase command sequence is written,
the system should read the status on DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure the device has
accepted the command sequence, and then read DQ3.
If DQ3 is “1”, the internally controlled erase cycle has
begun; all further commands (other than Erase Suspend) are ignored until the erase operation is complete.
If DQ3 is “0”, the device will accept additional sector
erase commands. To ensure the command has been
accepted, the system software should check the status
of DQ3 prior to and following each subsequent sector
22
Read DQ7–DQ0
Twice
Toggle Bit
= Toggle?
(Notes
1, 2)
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Program/Erase
Operation Complete
Notes:
1. Read toggle bit twice to determine whether or not it is
toggling. See text.
2. Recheck toggle bit because it may stop toggling as DQ5
changes to “1”. See text.
Am29F016D
Figure 5.
Toggle Bit Algorithm
21444E9 November 16, 2009
D A T A
Table 10.
Erase
Suspend
Mode
Write Operation Status
DQ7
(Note 1)
DQ6
DQ5
(Note 2)
DQ3
DQ2
(Note 1)
RY/BY#
DQ7#
Toggle
0
N/A
No toggle
0
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
0
Reading within Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
1
Reading within Non-Erase
Suspended Sector
Data
Data
Data
Data
Data
1
Erase-Suspend-Program
DQ7#
Toggle
0
N/A
N/A
0
Operation
Standard
Mode
S H E E T
Embedded Program Algorithm
Notes:
1. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further details.
2. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
See “DQ5: Exceeded Timing Limits” for more information.
November 16, 2009 21444E9
Am29F016D
23
D A T A
S H E E T
ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . .–65° C to +125° C
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . . –2.0 V to 7.0 V
Ambient Temperature
with Power Applied. . . . . . . . . . . . . .–55° C to +125° C
A9, OE#, RESET# (Note 2) . . . . –2.0 V to 12.5 V
All other pins (Note 1). . . . . . . . . . –2.0 V to 7.0 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V.
During voltage transitions, inputs may overshoot VSS to
–2.0 V for periods of up to 20 ns. See . Maximum DC
voltage on output and I/O pins is VCC + 0.5 V. During
voltage transitions, outputs may overshoot to VCC + 2.0
V for periods up to 20 ns. See .
2. Minimum DC input voltage on A9, OE#, RESET# pins is
–0.5 V. During voltage transitions, A9, OE#, RESET# pins
may overshoot VSS to –2.0 V for periods of up to 20 ns.
See . Maximum DC input voltage on A9, OE#, and
RESET# is 12.5 V which may overshoot to 13.5 V for
periods up to 20 ns.
20 ns
20 ns
+0.8 V
–0.5 V
–2.0 V
20 ns
3. No more than one output shorted at a time. Duration of
the short circuit should not be greater than one second.
Stresses greater than those listed in this section may cause
permanent damage to the device. This is a stress rating
only; functional operation of the device at these or any other
conditions above those indicated in the operational sections
of this specification is not implied. Exposure of the device to
absolute maximum rating conditions for extended periods
may affect device reliability.
Figure 6. Maximum Negative
Overshoot Waveform
20 ns
VCC
+2.0 V
VCC
+0.5 V
2.0 V
20 ns
20 ns
Figure 7. Maximum Positive
Overshoot Waveform
OPERATING RANGES
Industrial (I) Devices
Ambient Temperature (TC) . . . . . . . . .–40° C to +85° C
VCC Supply Voltages
VCC for ± 10% devices . . . . . . . . . . . .+4.5 V to +5.5 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
24
Am29F016D
21444E9 November 16, 2009
D A T A
S H E E T
DC CHARACTERISTICS
TTL/NMOS Compatible
Parameter
Symbol
Parameter Description
Test Description
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCC Max
ILIT
A9 Input Load Current
VCC = VCC Max, A9 = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCC Max
ICC1
VCC Read Current (Note 1)
CE# = VIL, OE# = VIH
ICC2
VCC Write Current (Notes 2, 3)
ICC3
Min
Typ
Max
Unit
±1.0
µA
50
µA
±1.0
µA
25
40
mA
CE# = VIL, OE# = VIH
40
60
mA
VCC Standby Current
(CE# Controlled)
VCC = VCC Max, CE# = VIH,
RESET# = VIH
0.4
1.0
mA
ICC4
VCC Standby Current
(RESET# Controlled)
VCC = VCC Max, RESET# = VIL
0.4
1.0
mA
VIL
Input Low Level
–0.5
0.8
V
VIH
Input High Level
2.0
VCC + 0.5
V
VID
Voltage for Autoselect and Sector
VCC = 5.0 V
Protect
11.5
12.5
V
VOL
Output Low Voltage
IOL = 12 mA, VCC = VCC Min
0.45
V
VOH
Output High Level
IOH = –2.5 mA VCC = VCC Min
VLKO
Low VCC Lock-out Voltage
2.4
V
3.2
4.2
V
Max
Unit
±1.0
µA
50
µA
±1.0
µA
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Description
Min
Typ
ILI
Input Load Current
VIN = VSS to VCC, VCC = VCC Max
ILIT
A9 Input Load Current
VCC = VCC Max, A9 = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC, VCC = VCC Max
ICC1
VCC Read Current (Note 1)
CE# = VIL, OE# = VIH
25
40
mA
ICC2
VCC Write Current (Notes 2, 3)
CE# = VIL, OE# = VIH
30
40
mA
ICC3
VCC Standby Current
(CE# Controlled) (Note 4)
VCC = VCC Max, CE# = VCC ± 0.5 V,
RESET# = VCC ± 0.5 V
1
5
µA
ICC4
VCC Standby Current
(RESET# Controlled) (Note 4)
VCC = VCC Max,
RESET# = VSS ± 0.5 V
1
5
µA
VIL
Input Low Level
–0.5
0.8
V
VIH
Input High Level
0.7x VCC
VCC + 0.3
V
VID
Voltage for Autoselect
and Sector Protect
VCC = 5.0 V
11.5
12.5
V
VOL
Output Low Voltage
IOL = 12 mA, VCC = VCC Min
0.45
V
VOH1
VOH2
VLKO
Output High Voltage
IOH = –2.5 mA, VCC = VCC Min
0.85 VCC
V
IOH = –100 μA, VCC = VCC Min
VCC – 0.4
V
Low VCC Lock-out Voltage
3.2
4.2
V
Notes for DC Characteristics (both tables):
1. The ICC current is typically less than 1 mA/MHz, with OE# at VIH.
2. ICC active while Embedded Program or Embedded Erase algorithm is in progress.
3. Not 100% tested.
4. For CMOS mode only ICC3, ICC4 = 20 µA at extended temperature (>+85°C).
November 16, 2009 21444E9
Am29F016D
25
D A T A
S H E E T
TEST CONDITIONS
Table 11.
5.0 V
All speed
options
Test Condition
2.7 kΩ
Device
Under
Test
Test Specifications
Output Load
CL
6.2 kΩ
1 TTL gate
Output Load Capacitance, CL
(including jig capacitance)
100
pF
Input Rise and Fall Times
20
ns
0.45–2.4
V
Input timing measurement
reference levels
0.8
V
Output timing measurement
reference levels
2.0
V
Input Pulse Levels
Note: Diodes are IN3064 or equivalent
Figure 8.
Test Setup
Unit
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
KS000010-PAL
26
Am29F016D
21444E9 November 16, 2009
D A T A
S H E E T
AC CHARACTERISTICS
Read-only Operations
Parameter Symbol
Speed Options
JEDEC
Std
Parameter Description
tAVAV
tRC
Read Cycle Time (Note 1)
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable to Output Delay
tGLQV
tOE
Output Enable to Output Delay
tOEH
Output Enable Hold Time
(Note 1)
Test Setup
-70
-90
Unit
Min
70
90
ns
CE# = VIL
OE# = VIL
Max
70
90
ns
OE# = VIL
Max
70
90
ns
Max
40
40
ns
Read
Min
0
0
ns
Toggle and Data#
Polling
Min
10
10
ns
tEHQZ
tDF
Chip Enable to Output High Z (Note 1)
Max
20
20
ns
tGHQZ
tDF
Output Enable to Output High Z (Note 1)
Max
20
20
ns
tAXQX
tOH
Output Hold Time From Addresses CE# or OE#
Whichever Occurs First
Min
0
0
ns
RESET# Pin Low to Read Mode
(Note 1)
Max
20
20
µs
tReady
Notes:
1. Not 100% tested.
2. Refer to and for test specifications.
tRC
Addresses Stable
Addresses
tACC
CE#
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0V
Figure 9.
November 16, 2009 21444E9
Read Operation Timings
Am29F016D
27
D A T A
S H E E T
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
Test Setup
All Speed Options
Unit
tREADY
RESET# Pin Low (During Embedded
Algorithms) to Read or Write (See Note)
Max
20
µs
tREADY
RESET# Pin Low (NOT During Embedded
Algorithms) to Read or Write (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
RESET# High Time Before Read (See Note)
Min
50
ns
tRB
RY/BY# Recovery Time
Min
0
ns
Note:
Not 100% tested.
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Figure 10.
28
RESET# Timings
Am29F016D
21444E9 November 16, 2009
D A T A
S H E E T
AC CHARACTERISTICS
Erase/Program Operations
Parameter
Speed Options
JEDEC
Std
Parameter Description
-70
-90
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
70
90
ns
tAVWL
tAS
Address Setup Time
Min
tWLAX
tAH
Address Hold Time
Min
40
45
ns
tDVWH
tDS
Data Setup Time
Min
40
45
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
Read Recover Time Before Write
(OE# high to WE# low)
Min
0
ns
0
ns
tGHWL
tGHWL
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHWL
tWPH
Write Pulse Width High
Min
20
ns
tWHWH1
tWHWH1
Byte Programming Operation (Note 2)
Typ
7
µs
Typ
1
sec
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Max
8
sec
50
µs
tVCS
VCC Set Up Time (Note 1)
Min
tBUSY
WE# to RY/BY# Valid
Max
40
40
45
40
ns
ns
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
November 16, 2009 21444E9
Am29F016D
29
D A T A
S H E E T
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
555h
Read Status Data (last two cycles)
PA
PA
PA
tAH
CE#
tCH
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
A0h
Data
PD
Status
tBUSY
DOUT
tRB
RY/BY#
tVCS
VCC
Note: PA = program address, PD = program data, DOUT is the true data at the program address.
Figure 11.
30
Program Operation Timings
Am29F016D
21444E9 November 16, 2009
D A T A
S H E E T
AC CHARACTERISTICS
tAS
tWC
2AAh
Addresses
VA
SA
VA
555h for chip erase
tAH
CE#
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCC
Note:
SA = Sector Address. VA = Valid Address for reading status data.
Figure 12.
November 16, 2009 21444E9
Chip/Sector Erase Operation Timings
Am29F016D
31
D A T A
S H E E T
AC CHARACTERISTICS
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
DQ0–DQ6
Status Data
Status Data
Valid Data
True
High Z
Valid Data
True
tBUSY
RY/BY#
Note:
VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle.
Figure 13.
Data# Polling Timings (During Embedded Algorithms)
tRC
Addresses
VA
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ6/DQ2
tBUSY
Valid Status
Valid Status
(first read)
(second read)
Valid Status
Valid Data
(stops toggling)
RY/BY#
Note:
VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle,
and array data read cycle.
Figure 14.
32
Toggle Bit Timings (During Embedded Algorithms)
Am29F016D
21444E9 November 16, 2009
D A T A
S H E E T
AC CHARACTERISTICS
Enter
Embedded
Erasing
Erase
Suspend
Erase
WE#
Enter Erase
Suspend Program
Erase
Resume
Erase
Suspend
Program
Erase Suspend
Read
Erase
Complete
Erase
Erase Suspend
Read
DQ6
DQ2
Note:
The system may use OE# or CE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within the erase-suspended
sector.
Figure 15. DQ2 vs. DQ6
Temporary Sector Unprotect
Parameter
JEDEC
Std
Description
tVIDR
VID Rise and Fall Time (See Note)
tRSP
RESET# Setup Time for Temporary Sector
Unprotect
All Speed Options
Unit
Min
500
ns
Min
4
µs
Note:
Not 100% tested.
12 V
RESET#
0 or 5 V
0 or 5 V
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRSP
RY/BY#
Figure 16.
November 16, 2009 21444E9
Temporary Sector Group Unprotect Timings
Am29F016D
33
D A T A
S H E E T
AC CHARACTERISTICS
Erase and Program Operations
Alternate CE# Controlled Writes
Parameter Symbol
Speed Options
JEDEC
Std
Parameter Description
-70
-90
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
70
90
ns
tAVEL
tAS
Address Setup Time
Min
tELAX
tAH
Address Hold Time
Min
40
45
ns
tDVEH
tDS
Data Setup Time
Min
40
45
ns
tEHDX
tDH
Address Hold Time
Min
0
ns
tGHEL
tGHEL
Read Recover Time Before Write
Min
0
ns
tWLEL
tWS
CE# Setup Time
Min
0
ns
tEHWH
tWH
CE# Hold Time
Min
0
ns
tELEH
tCP
Write Pulse Width
Min
tEHEL
tCPH
Write Pulse Width High
Min
20
ns
tWHWH1
tWHWH1
Byte Programming Operation (Note 2)
Typ
7
µs
Typ
1
sec
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Max
8
sec
0
40
ns
45
ns
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
34
Am29F016D
21444E9 November 16, 2009
D A T A
S H E E T
AC CHARACTERISTICS
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tWHWH1 or 2
tCP
CE#
tWS
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. PA = Program Address, PD = Program Data, SA = Sector Address, DQ7# = Complement of Data Input, DOUT = Array Data.
2. Figure indicates the last two bus cycles of the command sequence.
Figure 17.
November 16, 2009 21444E9
Alternate CE# Controlled Write Operation Timings
Am29F016D
35
D A T A
S H E E T
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Sector Erase Time
1
8
sec
Chip Erase Time
32
256
sec
Byte Programming Time
7
300
µs
14.4
43.2
sec
Chip Programming Time (Note 3)
Comments
Excludes 00h programming prior to
erasure (Note 4)
Excludes system-level overhead
(Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25° C, 5.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 4.5 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum byte program time listed. If the maximum byte program time given is exceeded, only then
does the device set DQ5 = 1. See the section on DQ5 for further information.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle sequence for programming. See Table 6 for further
information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Input Voltage with respect to VSS on I/O pins
VCC Current
Min
Max
–1.0 V
VCC + 1.0 V
–100 mA
+100 mA
Note: Includes all pins except VCC. Test conditions: VCC = 5.0 Volt, one pin at a time.
TSOP AND SO PIN CAPACITANCE
Parameter
Symbol
CIN
Parameter Description
Test Conditions
Min
Max
Unit
6
7.5
pF
Input Capacitance
VIN = 0
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25° C, f = 1.0 MHz.
DATA RETENTION
Parameter
Test Conditions
Min
Unit
150° C
10
Years
125° C
20
Years
Minimum Pattern Data Retention Time
36
Am29F016D
21444E9 November 16, 2009
D A T A
S H E E T
PHYSICAL DIMENSIONS
TS 040—40-Pin Standard Thin Small Outline Package
Dwg rev AA; 10/99
November 16, 2009 21444E9
Am29F016D
37
D A T A
S H E E T
PHYSICAL DIMENSIONS (continued)
TS 048—48-Pin Standard Thin Small Outline Package
Dwg rev AA; 10/99
38
Am29F016D
21444E9 November 16, 2009
D A T A
S H E E T
PHYSICAL DIMENSIONS (continued)
SO 044—44-Pin Small Outline Package
Dwg rev AC; 10/99
November 16, 2009 21444E9
Am29F016D
39
D A T A
S H E E T
REVISION SUMMARY
Revision A (May 1997)
Distinctive Characteristics
Initial release of Am29F016B (0.35 µm) device.
Added:
Revision B (January 1998)
■ 20-year data retention at 125° C
— Reliable operation for the life of the system
Global
Made formatting and layout consistent with other data
sheets. Used updated common tables and diagrams.
Revision B+1 (January 1998)
DC Characteristics—CMOS Compatible
ICC3, ICC4: Added Note 4, “For CMOS mode only ICC3,
ICC4 = 20 µA at extended temperature (>+85°C)”.
DC Characteristics—TTL/NMOS Compatible and
CMOS Compatible
AC Characteristics—Read-only Operations
Deleted note referring to output driver disable time.
Figure 16—Temporary Sector Group Unprotect
Timings
ICC1, ICC2, ICC3, ICC4: Added Note 2 “Maximum ICC
specifications are tested with VCC = VCCmax”.
ICC3, ICC4: Deleted VCC = VCCMax.
Corrected title to indicate “sector group.”
Revision C+1 (March 23, 1999)
Revision B+2 (April 1998)
Operating Ranges
Global
The temperature ranges are now specified as ambient.
Added -70 speed option, deleted -75 speed option.
Distinctive Characteristics
Revision C+2 (May 17, 1999)
Product Selector Guide
Changed minimum 100K write/erase cycles guaranteed to 1,000,000.
Corrected the tOE specification for the -150 speed option to 55 ns.
Ordering Information
Operating Ranges
Added extended temperature availability to -90, -120,
and -150 speed options.
VCC Supply Voltages: Added “VCC for ± 5% devices .
+4.75 V to +5.25 V”.
Operating Ranges
Revision C+3 (July 2, 1999)
Added extended temperature range.
Global
DC Characteristics, CMOS Compatible
Added references to availability of device in Known
Good Die (KGD) form.
Corrected the CE# and RESET# test conditions for
ICC3 and ICC4 to VCC ±0.5 V.
AC Characteristics
Erase/Program Operations; Erase and Program Operations Alternate CE# Controlled Writes: Corrected the
notes reference for tWHWH1 and tWHWH2. These parameters are 100% tested. Corrected the note reference for
tVCS. This parameter is not 100% tested.
Temporary Sector Unprotect Table
Added note reference for tVIDR. This parameter is not
100% tested.
Revision D (November 16, 1999)
AC Characteristics—Figure 11. Program
Operations Timing and Figure 12. Chip/Sector
Erase Operations
Deleted tGHWL and changed OE# waveform to start at
high.
Physical Dimensions
Replaced figures with more detailed illustrations.
Revision E (May 19, 2000)
Erase and Programming Performance
Global
Changed minimum 100K program and erase cycles
guaranteed to 1,000,000.
Changed part number to Am29F016D. This reflects the
new 0.23 µm process technology upon which this device will now be built.
Revision C (January 1999)
Global
Updated for CS39S process technology.
40
The Am29F016D is compatible with the previous 0.32
µm Am29F016B device, with the exception of the sector group protect and unprotect algorithms. These
algorithms are provided in a seperate document. Contact AMD for more information or to request a copy of
that document.
Am29F016D
21444E9 November 16, 2009
D A T A
S H E E T
This data sheet will be marked preliminary until the device has been in full production for a number of months.
Revision E7 (March 3, 2009)
The -75 speed option (70 ns, ±5% VCC) has been replaced by a -70 speed option (70 ns, ±10 VCC).
Added obsolescence information.
The burn-in option is no longer available.
Global
Revision E8 (August 3, 2009)
Global
The device now has the Unlock Bypass Program
feature.
The publication number of the document describing
sector protection/unprotection implementation is now
23922.
Revision E+1 (December 4, 2000)
Removed obsolescence information.
Revision E9 (November 16, 2009)
Global
Removed 120 ns speed option.
Removed all commercial temperature range options.
Global
Added table of contents. Removed Preliminary status
from document.
Revision E+2 (March 23, 2001)
Common Flash Memory Interface (CFI)
Added section.
Table 9, Am29F016D Command Definitions
Corrected the addresses for the three-cycle unlock bypass command sequence. Added Note 9 and CFI
Query command to table.
Revision E+3 (June 4, 2004)
Ordering Information
Added Lead-free (Pb-free) options to the Temperature
Range breakout of the OPN table and the Valid Combinations table..
Revision E+4 (January 4, 2006)
Global
Deleted 150 speed option
Deleted TSR048 48-pin Reverse Thin Small Outline
Package Option
Deleted TSR040 40-pin Reverse Thin Small Outline
Package Option
Revision E5 (July 27, 2006)
Global
Added product availability notice to cover page and first
page of data sheet.
AC Characteristics
Erase/Program Operations table: Changed tBUSY to a
maximum specification.
Revision E6 (November 2, 2006)
Global
Deleted product availability notice to cover page and
first page of data sheet.
November 16, 2009 21444E9
Am29F016D
41
D A T A
S H E E T
Colophon
The products described in this document are designed, developed and manufactured as contemplated for general use, including without
limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as
contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the
public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility,
aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for
any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite). Please note that Spansion will not be liable to
you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor
devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design
measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal
operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under
the Foreign Exchange and Foreign Trade Law of Japan, the US Export Administration Regulations or the applicable laws of any other country,
the prior authorization by the respective government entity will be required for export of those products.
Trademarks and Notice
The contents of this document are subject to change without notice. This document may contain information on a Spansion product under
development by Spansion. Spansion reserves the right to change or discontinue work on any product without notice. The information in this
document is provided as is without warranty or guarantee of any kind as to its accuracy, completeness, operability, fitness for particular purpose,
merchantability, non-infringement of third-party rights, or any other warranty, express, implied, or statutory. Spansion assumes no liability for any
damages of any kind arising out of the use of the information in this document.
Copyright © 1997–2005 Advanced Micro Devices, Inc. All rights reserved. AMD, the AMD logo, and combinations thereof are registered
trademarks of Advanced Micro Devices, Inc. Product names used in this publication are for identification purposes only and may be trademarks
of their respective companies.
Copyright © 2006-2009 Spansion Inc. All rights reserved. Spansion®, the Spansion logo, MirrorBit®, MirrorBit® Eclipse™, ORNAND™,
EcoRAM™ and combinations thereof, are trademarks and registered trademarks of Spansion LLC in the United States and other countries.
Other names used are for informational purposes only and may be trademarks of their respective owners.
42
Am29F016D
21444E9 November 16, 2009
Was this manual useful for you? yes no
Thank you for your participation!

* Your assessment is very important for improving the work of artificial intelligence, which forms the content of this project

Download PDF

advertisement