BLF183XRU datasheet

BLF183XRU datasheet
BLF183XR; BLF183XRS
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 350 W extremely rugged LDMOS power transistor for broadcast and industrial
applications in the HF to 600 MHz band.
Table 1.
Application information
VDS
PL
Gp
D
Test signal
f
(MHz)
(V)
(W)
(dB)
(%)
pulsed RF
108
50
350
28
75
CW
88 to 108
50
388
26
80
pulsed RF
30 to 512
50
400
15
48
CW
30 to 512
35
193
14
47
1.2 Features and benefits







Easy power control
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (HF to 600 MHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
 Industrial, scientific and medical applications
 Broadcast transmitter applications
BLF183XR; BLF183XRS
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
BLF183XR (SOT1121A)
1
drain1
2
drain2
3
gate1
4
gate2
5
1
1
2
3
[1]
source
5
5
3
4
4
2
sym117
BLF183XRS (SOT1121B)
1
drain1
2
drain2
3
gate1
4
gate2
5
1
2
3
4 5
1
3
5
4
[1]
source
2
sym117
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Type number Package
Name
Description
Version
BLF183XR
-
flanged LDMOST ceramic package; 2 mounting holes;
4 leads
SOT1121A
BLF183XRS
-
earless flanged ceramic package; 4 leads
SOT1121B
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Max
Unit
VDS
drain-source voltage
-
135
V
gate-source voltage
6
+11
V
Tstg
storage temperature
65
+150
C
-
225
C
[1]
Product data sheet
Min
VGS
Tj
BLF183XR_BLF183XRS#3
Conditions
junction temperature
[1]
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
2 of 15
BLF183XR; BLF183XRS
Power LDMOS transistor
5. Thermal characteristics
Table 5.
Thermal characteristics
Symbol Parameter
Conditions
Tj = 115 C
[1][2]
Rth(j-c)
thermal resistance from junction to case
Zth(j-c)
transient thermal impedance from junction Tj = 150 C; tp = 100 s;
to case
 = 20 %
[1]
[3]
Typ
Unit
0.25
K/W
0.076 K/W
Tj is the junction temperature.
[2]
Rth(j-c) is measured under RF conditions.
[3]
See Figure 1.
aaa-016794
0.3
Zth(j-c)
(K/W)
0.25
(7)
(6)
(5)
(4)
(3)
(2)
(1)
0.2
0.15
0.1
0.05
0
10-7
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
(1)  = 1 %
(2)  = 2 %
(3)  = 5 %
(4)  = 10 %
(5)  = 20 %
(6)  = 50 %
(7)  = 100 % (DC)
Fig 1.
BLF183XR_BLF183XRS#3
Product data sheet
Transient thermal impedance from junction to case as a function of pulse
duration
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Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
3 of 15
BLF183XR; BLF183XRS
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol Parameter
Conditions
V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 1.5 mA
Min
Typ
Max
Unit
135
-
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 150 mA
1.33
2.0
2.33
V
VGSq
gate-source quiescent voltage
VDS = 50 V; ID = 50 mA
-
1.9
-
V
IDSS
drain leakage current
VGS = 0 V; VDS = 50 V
-
-
1.4
A
IDSX
drain cut-off current
VGS = VGS(th) + 3.75 V;
VDS = 10 V
-
21
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
-
140
nA
RDS(on)
drain-source on-state resistance VGS = VGS(th) + 3.75 V;
ID = 5.25 A
-
0.29 -

Table 7.
AC characteristics
Tj = 25 C; per section unless otherwise specified.
Symbol
Parameter
Conditions
Min Typ
Max Unit
Crs
feedback capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
-
1.1
-
pF
Ciss
input capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
-
156
-
pF
Coss
output capacitance
VGS = 0 V; VDS = 50 V; f = 1 MHz
-
51
-
pF
Table 8.
RF characteristics
Test signal: pulsed RF; tp = 100 s;  = 20 %; f = 108 MHz; RF performance at VDS = 50 V;
IDq = 100 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit.
BLF183XR_BLF183XRS#3
Product data sheet
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL = 350 W
26.5
28
-
dB
RLin
input return loss
PL = 350 W
-
10
7
dB
D
drain efficiency
PL = 350 W
71
75
-
%
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
4 of 15
BLF183XR; BLF183XRS
Power LDMOS transistor
aaa-016081
300
Coss
(pF)
250
200
150
100
50
0
0
10
20
30
40
50
VDS (V)
60
VGS = 0 V; f = 1 MHz.
Fig 2.
Output capacitance as a function of drain-source voltage; typical values per
section
7. Test information
7.1 Ruggedness in class-AB operation
The BLF183XR and BLF183XRS are capable of withstanding a load mismatch
corresponding to VSWR > 65 : 1 through all phases under the following conditions:
VDS = 50 V; IDq = 100 mA; PL = 350 W pulsed; f = 108 MHz.
7.2 Impedance information
drain 1
gate 1
Zi
ZL
gate 2
drain 2
001aan207
Fig 3.
Definition of transistor impedance
Table 9.
Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL = 350 W.
BLF183XR_BLF183XRS#3
Product data sheet
f
Zi
ZL
(MHz)
()
()
108
10.3  j35.6
10.9 + j2.5
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
5 of 15
BLF183XR; BLF183XRS
Power LDMOS transistor
7.3 UIS avalanche energy
Table 10. Typical avalanche data per section
Tamb = 25 C; typical test data; test jig without water cooling.
IAS
EAS
(A)
(J)
10
2.6
12.5
1.5
15
1.0
For information see application note AN10273.
7.4 Test circuit
95 mm
95 mm
C19
R3
-
T2
+
L3
C7
C5
R5
C10
L1
R1
80 mm
C2
C1
C12
C14
C16
C15
C9
C4
C3
R2
C11
R6
L2
C6
C17
C21
C18
C13
C8
+ L4
-
T1
R4
C20
8.5 mm
56 mm
aaa-017585
59 mm
Printed-Circuit Board (PCB): Taconic RF-35; r = 3.5 F/m; thickness = 0.765 mm; thickness copper plating = 35 m, gold
plated.
See Table 11 for a list of components.
Fig 4.
Component layout for class-AB production test circuit
Table 11. List of components
For test circuit see Figure 4.
Component
Description
C1, C4
multilayer ceramic chip capacitor 51 pF
[1]
C2, C3
multilayer ceramic chip capacitor 150 pF
[1]
C5, C6
multilayer ceramic chip capacitor 4.7 F, 50 V
C7, C8
multilayer ceramic chip capacitor 820 pF
[1]
C9
multilayer ceramic chip capacitor 11 pF
[1]
C10, C11
multilayer ceramic chip capacitor 820 pF
[1]
C12, C13
multilayer ceramic chip capacitor 4.7 F, 100 V
C14, C15, C21 electrolytic capacitor
BLF183XR_BLF183XRS#3
Product data sheet
Value
51 pF
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 September 2015
Remarks
[1]
© Ampleon The Netherlands B.V. 2015. All rights reserved.
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BLF183XR; BLF183XRS
Power LDMOS transistor
Table 11. List of components …continued
For test circuit see Figure 4.
Component
Description
Value
Remarks
C16
multilayer ceramic chip capacitor 7.5 pF
[1]
C17,C18
multilayer ceramic chip capacitor 120 pF
[1]
C19, C20
electrolytic capacitor
2200 F, 64 V
L1, L2, L3, L4
3.0 turn 1.0 mm copper wire
D = 3.0 mm
R1, R2
resistor
510 
SMD 1206
R3, R4
shunt resistor
0.01 
Ohmite:
FC4L110R010FER
R5, R6
metal film resistor
10 , 0.6 W
SMD 1206
T1, T2
semi rigid coax
50 ,
length = 160 mm
EZ Form:
EZ-141-AL-TP-M17
[1]
American Technical Ceramics type 100B or capacitor of same quality.
7.5 Graphical data
The following figures are measured in a class-AB production test circuit.
7.5.1 1-Tone CW pulsed
aaa-016075
30
Gp
(dB)
ηD
(%)
ηD
PL
(dBm)
28
70
59
26
50
57
Gp
aaa-016076
61
90
(2)
Ideal PL
(1)
PL
24
22
0
100
200
300
400
PL (W)
30
55
10
500
53
24
VDS = 50 V; IDq = 100 mA; f = 108 MHz; tp = 100 s;
 = 20 %.
25
26
27
28
29
30
31
Pi (dBm)
VDS = 50 V; IDq = 100 mA; f = 108 MHz; tp = 100 s;
 = 20 %.
(1) PL(1dB) = 55.5 dBm (354 W)
(2) PL(3dB) = 56.1 dBm (404 W)
Fig 5.
Power gain and drain efficiency as function of
output power; typical values
BLF183XR_BLF183XRS#3
Product data sheet
Fig 6.
Output power as a function of input power;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
7 of 15
BLF183XR; BLF183XRS
Power LDMOS transistor
aaa-016077
32
Gp
(dB)
aaa-016078
80
ηD
(%)
30
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
60
28
(8)
(7)
(6)
(5)
(4)
(3)
(2)
(1)
26
40
20
24
22
0
0
100
200
300
400
PL (W)
500
0
VDS = 50 V; f = 108 MHz; tp = 100 s;  = 20 %.
100
(1) IDq = 20 mA
(2) IDq = 100 mA
(2) IDq = 100 mA
(3) IDq = 200 mA
(3) IDq = 200 mA
(4) IDq = 400 mA
(4) IDq = 400 mA
(5) IDq = 600 mA
(5) IDq = 600 mA
(6) IDq = 800 mA
(6) IDq = 800 mA
(7) IDq = 1000 mA
(7) IDq = 1000 mA
(8) IDq = 1200 mA
(8) IDq = 1200 mA
Power gain as a function of output power;
typical values
BLF183XR_BLF183XRS#3
Product data sheet
300
400
PL (W)
500
VDS = 50 V; f = 108 MHz; tp = 100 s;  = 20 %.
(1) IDq = 20 mA
Fig 7.
200
Fig 8.
Drain efficiency as a function of output power;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
8 of 15
BLF183XR; BLF183XRS
Power LDMOS transistor
aaa-016079
30
Gp
(dB)
aaa-016080
90
ηD
(%)
(7) (6)
(5)
(4)
(3)
(2)
(1)
28
70
26
(1)
(2)
50
(3)
(4)
24
(5)
(6)
22
30
(7)
20
10
0
100
200
300
400
PL (W)
500
IDq = 100 mA; f = 108 MHz; tp = 100 s;  = 20 %.
0
100
(1) VDS = 50 V
(2) VDS = 45 V
(2) VDS = 45 V
(3) VDS = 40 V
(3) VDS = 40 V
(4) VDS = 35 V
(4) VDS = 35 V
(5) VDS = 30 V
(5) VDS = 30 V
(6) VDS = 25 V
(6) VDS = 25 V
(7) VDS = 20 V
Product data sheet
400
PL (W)
500
(7) VDS = 20 V
Power gain as a function of output power;
typical values
BLF183XR_BLF183XRS#3
300
IDq = 100 mA; f = 108 MHz; tp = 100 s;  = 20 %.
(1) VDS = 50 V
Fig 9.
200
Fig 10. Drain efficiency as a function of output power;
typical values
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
9 of 15
BLF183XR; BLF183XRS
Power LDMOS transistor
8. Package outline
Flanged LDMOST ceramic package; 2 mounting holes; 4 leads
SOT1121A
D
A
F
D1
U1
B
q
C
H1
c
1
2
p
U2
H
E1
E
5
A
w1
3
A
B
4
b
w2
C
Q
e
0
5
Dimensions
Unit(1)
mm
10 mm
scale
A
max 4.75
nom
min 3.45
b
c
D
D1
3.94
0.18 20.02 19.96
3.68
0.10 19.61 19.66
E
e
E1
F
H
H1
p
Q(2)
9.53 9.53 1.14 19.94 12.83 3.38
1.70
9.27 9.27 0.89 18.92 12.57 3.12
1.45
q
U1
U2
max 0.187 0.155 0.007 0.788 0.786
0.375 0.375 0.045 0.785 0.505 0.133 0.067
inches nom
0.35
min 0.136 0.145 0.004 0.772 0.774
0.365 0.365 0.035 0.745 0.495 0.123 0.057
33.91 9.65
1.345 0.39
0.01 0.02
1.1
1.335 0.38
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
Outline
version
References
IEC
JEDEC
JEITA
w2
0.25 0.51
27.94
8.89
w1
34.16 9.91
sot1121a_po
European
projection
Issue date
09-10-12
10-02-02
SOT1121A
Fig 11. Package outline SOT1121A
BLF183XR_BLF183XRS#3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
10 of 15
BLF183XR; BLF183XRS
Power LDMOS transistor
Earless flanged ceramic package; 4 leads
SOT1121B
D
A
F
5
D1
D
U1
w2
H1
1
H
c
D
2
U2
E1
3
E
4
b
y
w3
e
Q
0
5
10 mm
scale
Dimensions
Unit(1)
mm
A
max 4.75
nom
min 3.45
b
3.94
c
D
D1
E
e
E1
F
H
H1
Q
U1
U2
w2
w3
9.53 9.53 1.14 19.94 12.83 1.70 20.70 9.91 0.51 0.25
0.18 20.02 19.96
0.25
8.89
3.68
0.08 19.61 19.66
9.27 9.27 0.89 18.92 12.57 1.45 20.45 9.65
max 0.187 0.155 0.007 0.788 0.786
0.375 0.375 0.045 0.785 0.505 0.067 0.815 0.39 0.02 0.01
0.35
inches nom
min 0.136 0.145 0.003 0.772 0.774
0.365 0.365 0.035 0.745 0.495 0.057 0.805 0.38
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
Outline
version
y
References
IEC
JEDEC
JEITA
0.01
sot1121b_po
European
projection
Issue date
09-12-14
12-06-07
SOT1121B
Fig 12. Package outline SOT1121B
BLF183XR_BLF183XRS#3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
11 of 15
BLF183XR; BLF183XRS
Power LDMOS transistor
9. Handling information
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
10. Abbreviations
Table 12.
Abbreviations
Acronym
Description
CW
Continuous Wave
ESD
ElectroStatic Discharge
HF
High Frequency
LDMOS
Laterally Diffused Metal-Oxide Semiconductor
LDMOST
Laterally Diffused Metal-Oxide Semiconductor Transistor
MTF
Median Time to Failure
SMD
Surface Mounted Device
UIS
Unclamped Inductive Switching
VSWR
Voltage Standing-Wave Ratio
11. Revision history
Table 13.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BLF183XR_BLF183XRS#3
20150901
Product data sheet
-
BLF183XR_BLF183XRS v.2
Modifications:
•
The format of this document has been redesigned to comply with the new identity
guidelines of Ampleon.
•
Legal texts have been adapted to the new company name where appropriate.
BLF183XR_BLF183XRS v.2
20150522
Product data sheet
-
BLF183XR_BLF183XRS v.1
BLF183XR_BLF183XRS v.1
20140819
Objective data sheet
-
-
BLF183XR_BLF183XRS#3
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
12 of 15
BLF183XR; BLF183XRS
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Definition
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.ampleon.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Ampleon does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Ampleon sales office. In
case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Ampleon and its customer, unless Ampleon and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be valid
in which the Ampleon product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, Ampleon does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. Ampleon takes no responsibility for
the content in this document if provided by an information source outside of
Ampleon.
In no event shall Ampleon be liable for any indirect, incidental, punitive,
special or consequential damages (including - without limitation - lost profits,
lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Ampleon’ aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
Terms and conditions of commercial sale of Ampleon.
Right to make changes — Ampleon reserves the right to make changes to
information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use — Ampleon products are not designed, authorized or
warranted to be suitable for use in life support, life-critical or safety-critical
systems or equipment, nor in applications where failure or malfunction of an
BLF183XR_BLF183XRS#3
Product data sheet
Ampleon product can reasonably be expected to result in personal injury,
death or severe property or environmental damage. Ampleon and its
suppliers accept no liability for inclusion and/or use of Ampleon products in
such equipment or applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Ampleon makes no representation
or warranty that such applications will be suitable for the specified use without
further testing or modification.
Customers are responsible for the design and operation of their applications
and products using Ampleon products, and Ampleon accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Ampleon product is suitable and
fit for the customer’s applications and products planned, as well as for the
planned application and use of customer’s third party customer(s). Customers
should provide appropriate design and operating safeguards to minimize the
risks associated with their applications and products.
Ampleon does not accept any liability related to any default, damage, costs or
problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Ampleon products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Ampleon does not accept any
liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Ampleon products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.ampleon.com/terms, unless otherwise agreed in a valid written
individual agreement. In case an individual agreement is concluded only the
terms and conditions of the respective agreement shall apply. Ampleon
hereby expressly objects to applying the customer’s general terms and
conditions with regard to the purchase of Ampleon products by customer.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
13 of 15
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Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Ampleon product is automotive qualified, the product
is not suitable for automotive use. It is neither qualified nor tested in
accordance with automotive testing or application requirements. Ampleon
accepts no liability for inclusion and/or use of non-automotive qualified
products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without Ampleon’ warranty of the product for such
automotive applications, use and specifications, and (b) whenever customer
uses the product for automotive applications beyond Ampleon’ specifications
such use shall be solely at customer’s own risk, and (c) customer fully
indemnifies Ampleon for any liability, damages or failed product claims
resulting from customer design and use of the product for automotive
applications beyond Ampleon’ standard warranty and Ampleon’ product
specifications.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Any reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own Any
reference or use of any ‘NXP’ trademark in this document or in or on the
surface of Ampleon products does not result in any claim, liability or
entitlement vis-à-vis the owner of this trademark. Ampleon is no longer part of
the NXP group of companies and any reference to or use of the ‘NXP’
trademarks will be replaced by reference to or use of Ampleon’s own
trademarks.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13. Contact information
For more information, please visit:
http://www.ampleon.com
BLF183XR_BLF183XRS#3
Product data sheet
For sales office addresses, please visit:
http://www.ampleon.com/sales
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 September 2015
© Ampleon The Netherlands B.V. 2015. All rights reserved.
14 of 15
BLF183XR; BLF183XRS
Power LDMOS transistor
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.5
7.5.1
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 5
Ruggedness in class-AB operation . . . . . . . . . 5
Impedance information . . . . . . . . . . . . . . . . . . . 5
UIS avalanche energy . . . . . . . . . . . . . . . . . . . 6
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 7
1-Tone CW pulsed . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Handling information. . . . . . . . . . . . . . . . . . . . 12
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Contact information. . . . . . . . . . . . . . . . . . . . . 14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© Ampleon The Netherlands B.V. 2015.
All rights reserved.
For more information, please visit: http://www.ampleon.com
For sales office addresses, please visit: http://www.ampleon.com/sales
Date of release: 1 September 2015
Document identifier: BLF183XR_BLF183XRS#3
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