datasheet for VL381L3223E

datasheet for VL381L3223E
Product Specifications
PART NO:
REV:
VL381L3223E-CCS
1.1
General Information
256MB 32Mx72 DDR SDRAM ECC UNBUFFERED DIMM 184-PIN
Description:
The VL381L3223E is a 32M X 72 Double Data Rate SDRAM high density unbuffered DIMM. This
memory module consists of 9 CMOS 32Mx8 bit with 4 banks Synchronous DRAMs in TSOP-II 400 mil packages and a 2K EEPROM in 8-pin TSSOP package. This module is a 184-pin Dual In-line Memory Module and
is intended for mounting into a connector socket. Decoupling capacitors are mounted on the printed circuit
board for each SDRAM.
Features:
.
.
.
.
.
.
.
.
.
.
.
.
.
Power supply : VDD: 2.6V +/- 0.1V, VDDQ: 2.6V +/- 0.1V
Two data transfers per clock cycle
Birdirectional data strobe (DQS)
Differential clock inputs (CK and CK#)
DLL aligns DQ and DOS transition with CK transition
Programmable Read latency 3 (clock)
Programmable Burst ; length (2, 4, 8)
Progammable Burst (sequential & Interleave)
Auto & Self refresh, (8K/64ms refresh)
Serial presence detect with EEPROM
Gold edge contacts
Lead-free, RoHS compliant
PCB: Height 1.125”, single sided components
Order Information:
VL 381L3223E-CC S X
DRAM DIE (Option)
DRAM MANUFACTURER
S - SAMSUNG
MODULE SPEED
CC: PC3200 @ CL3
Pin N ame
Function
A0~A12
Address i nputs
BA0,BA1
Bank Selct Address
D Q0~D Q63
D ata Input/Output
C B0~C B7
C heck Bi ts
D QS0~D QS8
D ata Strobe Input/Output
C K0,C K0# ~
C K2,C K2#
C lock Input
C KE0
C lock Enable Input
C S 0#
C hi p Select Input
RAS#
Row Address Strobe
C AS#
C olumn Addres Input
WE#
Wri te Enable
D M0~D M8
D ata Mask
VD D
Power Supply
VD D Q
Power Supply for D QS
VSS
Ground
VREF
Power Supply for Reference
VD D SPD
SPD Power Supply (2.3V-3.6V)
SD A
Seri al D ata Input/Output
SC L
SPD C lock Input
SA0-SA2
SPD Address
NC
No C onnect
VL : Lead-free/RoHS
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 1 OF 8
Product Specifications
PART NO:
REV:
VL381L3223E-CCS
1.1
Pin C onfiguration
184-PIN D D R D IMM FR ON T
184-PIN D D R D IMM B AC K
Pin
N ame
Pin
N ame
Pin
N ame
Pin
N ame
Pin
N ame
Pin
N ame
Pin
N ame
Pin
N ame
1
VREF
24
DQ17
47
DQS8
70
VD D
93
VSS
116
VSS
139
VSS
162
D Q47
2
D Q0
25
D QS2
48
A0
71
NC
94
D Q4
117
D Q21
140
D M8
163
NC
3
VSS
26
VSS
49
C B2
72
D Q48
95
D Q5
118
A11
141
A 10
164
VD D Q
4
D Q1
27
A9
50
VSS
73
D Q49
96
VDD Q
119
DM2
142
C B6
165
D Q52
5
D QS0
28
D Q18
51
C B3
74
VSS
97
D M0
120
VD D
143
VD D Q
166
D Q53
6
D Q2
29
A7
52
BA1
75
C K 2#
98
D Q6
121
D Q22
144
C B7
167
A 13*
7
VD D
30
VD D Q
53
D Q32
76
C K2
99
D Q7
122
A8
145
VSS
168
VD D
8
D Q3
31
DQ19
54
VD D Q
77
VD D Q
100
VSS
123
D Q23
146
D Q36
169
DM6
9
NC
32
A5
55
D Q33
78
D QS6
101
NC
124
VSS
147
D Q37
170
D Q54
10
NC
33
D Q24
56
D QS4
79
D Q50
102
NC
125
A6
148
VDD
171
D Q55
11
VSS
34
vss
57
D Q34
80
D Q51
103
NC
126
DQ28
149
DM4
172
VD D Q
12
D Q8
35
D Q25
58
VSS
81
VSS
104
VD D Q
127
D Q29
150
D Q38
173
NC
13
D Q9
36
D QS3
59
BA0
82
NC
105
D Q12
128
VD D Q
151
D Q39
174
D Q60
14
D QS1
37
A4
60
D Q35
83
D Q56
106
DQ13
129
D M3
152
VSS
175
D Q61
15
VD D Q
38
VDD
61
D Q40
84
D Q57
107
D M1
130
A3
153
D Q44
176
VSS
16
C K1
39
D Q26
62
VD D Q
85
VDD
108
VD D
131
D Q30
154
RAS#
177
D M7
17
C K 1#
40
D Q27
63
WE#
86
D QS7
109
D Q14
132
VSS
155
D Q45
178
D Q62
18
VSS
41
A2
64
D Q41
87
D Q58
110
D Q15
133
D Q31
156
VD D Q
179
D Q63
19
D Q10
42
VSS
65
C AS#
88
D Q59
111
C K E 1*
134
C B4
157
C S 0#
180
VD D Q
20
D Q11
43
A1
66
VSS
89
VSS
112
VD DQ
135
C B5
158
C S 1#*
181
SA0
21
C KE0
44
C B0
67
D QS5
90
NC
113
NC
136
VD D Q
159
D M5
182
SA1
22
VD D Q
45
C B1
68
D Q42
91
SD A
114
D Q20
137
C K0
160
VSS
183
SA2
23
D Q16
46
VD D
69
D Q43
92
SC L
115
A 12
138
C K 0#
16 1
D Q46
184
VD D SPD
Note: *: These pi ns are not used on thi s module.
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 2 OF 8
Product Specifications
PART NO:
REV:
VL381L3223E-CCS
1.1
Functional Block Diagram
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Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 3 OF 8
Product Specifications
PART NO:
REV:
VL381L3223E-CCS
1.1
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 ~ 3.6
V
Voltage on VDD & VDDQ supply relative to VSS
VDD, VDDQ
-0.1 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
0
C
Operating temperature
TA
0 ~ 70
0
C
Power Dissipation
PD
9
W
Short circuit output current
IOS
50
mA
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposing to higher than recommended voltage for extended periods of time could affect device reliability.
D C Operating C onditions
TA = 00C to 700C
Parameter
Symbol
Mi n
Max
Uni t
VDD
2.5
2.7
V
I/O Supply voltage D D R400 ( nomi nal VD D 2.6V)
VDDQ
2.5
2.7
V
I/O Reference voltage
Supply voltage D D R400 ( nomi nal VD D 2.6V)
Note
VREF
0.49 * VD D Q
0.51 * VD D Q
V
1
I/O Termi nati on voltage
VTT
VREF-0.04
VREF+0.04
V
2
Input logi c hi gh voltage
VIH(D C )
VREF+0.15
VDDQ+0.30
V
Input logi c low voltage
VIL(D C )
-0.3
VREF-0.15
V
Input voltage level, C K and C K#
VIN(D C )
-0.3
VDDQ+0.30
V
Input di fferenti al voltage, C K and C K#
VID(D C )
0.36
VDDQ+0.60
V
Input crossi ng poi nt voltage, C K and C K#
VIX(D C )
0.3
VDDQ+0.60
V
-18
18
uA
-18
18
uA
C K, C K#
-6
6
uA
DM
-2
2
uA
Addr,
C AS#,RAS#,WE#
Input leakage current
C S #, C K E
II
Output leakage current
IOZ
-5
5
uA
Output hi gh current(normal strength)
VOUT = v + 0.84V
IOH
-16.8
-
mA
Output hi gh current(normal strength)
VOUT = VTT - 0.84V
IOL
16.8
-
mA
Output hi gh current(half strength)
VOUT = VTT + 0.45V
IOH
-9
-
mA
Output hi gh current(half strength)
VOUT = VTT - 0.45V
IOL
9
-
mA
3
Notes:
1. VREF i s expected to be equal to 0.5*VD D Q of the transmi tti ng devi ce, and to track vari ati ons i n the D C level of the same.
Peak to peak noi se on VREF may not excedd +/- 2% of the D C value.
2. VTT i s not appli ed di rectly to the devi ce. VTT i s a system supply for si gnal termi nati on resi stors, i s expected to be set equal to
VREF, and must track vari ati ons i n the D C level ofVREF.
3. VID i s the magni tude of the di fference between the i nput level on C K and the i nput level of C K#.
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 4 OF 8
Product Specifications
PART NO:
REV:
VL381L3223E-CCS
1.1
AC Operating C onditions
Parameter
Symbol
Min
Input High (Logic1) Voltage
VIH(AC )
VREF+0.31
Input Low (Logic0) Voltage
VIL(AC )
Input Differential Voltage, C K and CK# inputs
VID (AC )
Input Crossing Point Voltage, C K and CK# input
VIX(AC )
Max
Unit
Notes
V
1
VREF-0.31
V
1
0.7
VDD Q+0.6
V
0.5*VDD Q-0.2
0.5*VD DQ+0.2
V
Notes: 1. VIH overshoot: VIH = VDD Q + 1.5V for a pulse width <= 3ns and the pulse can not be greater than1/3 of the cycle rate.
VIL undershoot: VIL = - 1.5V for a pulse width <= 3ns and the pulse can not be greater than1/3 of the cycle rate.
Input/Output Capacitance
TA=250C, f=100MHz
Parameter
Symbol
Min
Max
Unit
Input capacitance (A0~A12, BA0~BA1,RAS#,CAS#,WE#)
CIN1
22
31
pF
Input capacitance (CKE0)
CIN2
22
31
pF
Input capacitance (CS0#)
CIN3
22
31
pF
Input capacitance (CK0,CK0# ~ CK2,CK2#)
CIN4
10
13
pF
Input capacitance (DM0 ~ DM8), (DQS0 ~ DQS8)
CIN5
8
9
pF
COUT1
8
9
pF
Input capacitance (DQ0 ~ DQ63), (CB0 ~ CB7)
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 5 OF 8
Product Specifications
PART NO:
REV:
VL381L3223E-CCS
1.1
IDD Specification
Condition
Symbol
-CC
Unit
IDD0
945
mA
IDD1
1170
mA
PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks are idle;
Power-down mode; tCK=tCK(MIN); CKE=LOW
IDD2P
36
mA
IDLE STANDBY CURRENT: CS#=HIGH; All device banks are idle; tCK=tCK(MIN);
CKE=HIGH; Address and other control inputs changing once per clock cycle.
VIN=VREF for DQ,DQS and DM
IDD2F
270
mA
ACITVE POWER-DOWN STANDBY CURRENT: One device bank active; Powerdown mode; tCK=tCK(MIN) ; CKE=LOW
IDD3P
495
mA
ACTIVE STANDBY CURRENT: CS#=HIGH; CKE=HIGH; One device bank active;
tRC=tRAS(MAX); tCK=tCK(MIN); DQ,DM and DQS inputs change twice per clock cycle;
Address and other control inputs changing once per clock cycle
IDD3N
6 75
mA
OPERATING CURRENT: Burst = 2; Reads; Continnuous burst; One device bank
active; Address and other control inputs changing once per clock cycle; tCK=tCK(MIN);
IOUT=0mA
IDD4R
1665
mA
OPERATING CURRENT: Burst = 2; Writes; Continnuous burst; One device bank
active; Address and other control inputs changing once per clock cycle; tCK=tCK(MIN);
DQ,DM and DQS inputs change twice per clock cycle
IDD4W
1980
mA
AUTO REFRESH CURRENT: TRC=TRFC(MIN)
IDD5
1800
mA
SELF-REFRESH CURRENT: CKE< 0.2V
IDD6
27
mA
OPERATING CURRENT: Four device bank interleaving Reads Burst=4 with auto
precharge; tRC=tRC(MIN) ; tCK=tCK(MIN); Address and control inputs change only during
Active READ, or WRITE commands
IDD7
3150
mA
OPERATING CURRENT: One device bank active; Active-Precharge; tRC=tRC(MIN);
tCK=tCK(MIN); DQ,DM and DQS inputs change once per clock cycle;
Address and control inputs change once every two clock cycles
OPERATING CURRENT: One device bank; Active-Read-Precharge; BL=4;
tRC=tRC(MIN); tCK=tCK(MIN); IOUT=0mA; Address and control inputs change once per clock
cycle
Note:
IDD specification is based on Samsung components. Other DRAM Manufacturers specification may be different.
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 6 OF 8
Product Specifications
PART NO:
REV:
VL381L3223E-CCS
1.1
AC Timming Parameters & Specifications
-C C
Parameter
Symbol
Min
Row C ycle Ti me
Max
U nit
tRC
55
Refresh row cycle ti me
tRFC
70
Row acti ve
tRAS
40
RAS# to C AS# delay
tRC D
15
tRP
15
ns
tRRD
10
ns
tWR
15
ns
tWTR
2
Row precharge ti me
Row acti ve to row acti ve delay
Wri te recovery ti me
Last data i n to READ command
C L=2
C lock cycle ti me
C L=2.5
tC K
C L=3
C lock hi gh level wi dth
C lock low level wi dth
tC H
tC K
ps
70K
ps
tC K
ns
-
ns
ns
-
-
5
10
ns
0.45
0.55
tC K
tC K
tC L
0.45
0.55
tD QSC K
-0.55
+0.55
ns
Output data access ti me from C K/C K#
tAC
-0.65
+0.65
ns
D ata strobe edge to output data edge
tD QSQ
-
0.4
ns
tC K
D QS-out access ti me from C K/C K#
Read preamble
tRPRE
0.9
1.1
Read postamble
tRPST
0.4
0.6
tC K
C K to vali d D QS-i n
tD QSS
0.72
1.28
tC K
D QS-i n setup ti me
tWPRES
0
ns
tWPRE
0.25
tC K
D QS falli ng edge to C K ri si ng-setup ti me
tD SS
0.2
tC K
D QS falli ng edge to C K ri si ng-hold ti me
tD SH
0.2
tC K
D QS-i n hi gh level wi dth
tD QSH
0.35
tC K
D QS-i n low level wi dth
TD QSL
0.35
tC K
Address and control i nput setup ti me (fast)
tISF
0.6
ns
Address and control i nput hold ti me (fast)
tIHF
0.6
ns
Address and control i nput setup (slow)
tISS
0.7
ns
Address and control i nput hold ti me (slow)
tIHS
0.7
D ata-out hi gh i mpedance ti me from C K/C K#
tHZ
D QS-i n hold ti me
D ata-out low i mpedance ti me from C K/C K#
Mode regi gster set cycle
D Q & D M setup ti me to D QS
ns
+0.65
ns
tLZ
-0.65
tMRD
2
ns
ns
tD S
0.4
ns
D Q & D M hold ti me to D QS
tD H
0.4
ns
C ontrol & address i nput pulse wi dth
tIPW
2.2
ns
D Q & D M i nput pulse wi dth
tD IPW
1.75
ns
Exi t self refresh to non-Read command
tXSNR
75
ns
Exi t self refresh to Read command
tXSRD
200
Refresh i nterval ti me
Output D QS vali d wi ndow
C lock half peri od
tREFI
tQH
tHP
-tQHS
tHP
tC Lmi n
or tC Hmi n
D ata hold skew factor
tQHS
D QS wri te postamble
tC K
7.8
us
-
ns
-
ns
0.5
ns
tWPST
0.4
Acti ve Read wi th auto precharge command
tRAP
15
0.6
ns
Auto precharge Wri te recovery + Precharge ti me
tD AL
tWR/tC K
+
tRP/tC K
tC K
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 7 OF 8
ns
Product Specifications
PART NO:
REV:
VL381L3223E-CCS
1.1
Package Dimensions
0.130 (3.30)
M AX
FRONT VIEW
5.256 (133.50)
5.244 (133.20)
5.077 (128.95)
TYP
0 .161(4.10) (4X)
0.154(3.90)
1.131 (28.725)
1.119 (28.425)
0.700 (17.80)
TYP.
0.098 (2.50) D
(2X)
0.091 (2.30) TYP.
PIN 1
0.050 (1.27)
TYP.
0.091 (2.30)
TYP.
PIN 92
0.250 (6.35) TYP.
0.039 (1.00)
TYP.
4.750 (120.65) TYP.
BACK VIEW
0.071 (1.80)
TYP
PIN 184
1.95 (49.53)
TYP.
PIN 93
2.55 (64.77)
TYP.
0.150 (3.80) 0.394 (10.00)
TYP.
TYP.
NOTE:
All dimensions in inches (millimet ers);
M AX
or t ypical w here not ed.
M IN
Revision History:
Date
Rev.
P ag e
08/20/10
1.1
All
C h an g es
Update datasheet
Virtium Technology, Inc. 30052 Tomas, Rancho Santa Margarita, CA 92688
Tel: 949-888-2444 Fax: 949-888-2445
PAGE 8 OF 8
0.054 (1.37)
0.046 (1.17)
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