BCR1BM-16A Data Sheet
Preliminary Datasheet
BCR1BM-16A
R07DS0967EJ0001
Rev.0.01
Nov 28, 2012
800V - 1A - Triac
Low Power Use
Features
 Tj: 125 °C
 Planar Passivation Type
 IT (RMS) : 1 A
 VDRM : 800 V (Tj = 125C)
 IFGTI, IRGTI, IRGTIII : 15 mA
Outline
RENESAS Package code: PRSS0003EA-A
(Package name: TO-92)
1
2
1
2
1. T2 Terminal
2. Gate Terminal
3. T1 Terminal
3
3
Applications
Washing machine, electric fan, air cleaner, other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Voltage class
16
800
Symbol
Note1
VDRM
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
1
Unit
A
Surge on-state current
ITSM
8
A
I2t
0.26
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
1
0.1
6
0.5
– 40 to +125
– 40 to +125
0.23
W
W
V
A
°C
°C
g
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
R07DS0967EJ0001 Rev.0.01
Nov 28, 2012
Unit
V
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 49°C
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Page 1 of 3
BCR1BM-16A
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
1.0
2.0
Unit
mA
V
Test conditions
Tj = 125°C, VDRM applied
Tc = 25°C, ITM = 1.2 A,
Instantaneous measurement
Gate trigger voltageNote2



VFGT
VRGT
VRGT
—
—
—
—
—
—
2.0
2.0
2.0
V
V
V
Tj = 25°C, VD = 6 V, RL = 6 ,
RG = 330 
Gate trigger currentNote2



IFGT
IRGT
IRGT
—
—
—
—
—
—
15
15
15
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 ,
RG = 330 
VGD
Rth (j-c)
0.1
—
—
—
—
50
V
°C/W
Tj = 125°C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
0.5
—
—
V/s
Tj = 125°C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 1.
2.
3.
4.
Gate open.
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured at the T2 terminal 1.5 mm away from the molded case.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.5 A/ms
3. Peak off-state voltage
VD = 400 V
R07DS0967EJ0001 Rev.0.01
Nov 28, 2012
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
Page 2 of 3
BCR1BM-16A
Preliminary
Package Dimensions
Package Name
TO-92*
JEITA Package Code
SC-43A
RENESAS Code
PRSS0003EA-A
Previous Code
T920
MASS[Typ.]
0.23g
Unit: mm
φ5.0Max
11.5Min
5.0Max
4.4
1.25 1.25
3.6
1.1
Circumscribed circle φ0.7
Ordering Information
Orderable Part Number
BCR1BM-16A#B00
BCR1BM-16A-A6#B00
BCR1BM-16A-TB#B00
Note:
Packing
Bag
Bag
Adhesive Tape
Quantity
500 pcs.
500 pcs.
2000 pcs.
Remark
Straight type
A6 Lead form
A8 Lead form
Please confirm the specification about the shipping in detail.
R07DS0967EJ0001 Rev.0.01
Nov 28, 2012
Page 3 of 3
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