BCR12KM-14LA DATASHEET

BCR12KM-14LA DATASHEET
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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
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April 1st, 2010
Renesas Electronics Corporation
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BCR12KM-14LA
Triac
Medium Power Use
REJ03G0335-0100
Rev.1.00
Aug.20.2004
Features
•
•
•
•
• Insulated Type
• Planar Passivation Type
• UL Recognized : Yellow Card No. E223904
File No. E80271
IT (RMS) : 12 A
VDRM : 700 V
IFGTI , IRGTI, IRGTⅢ : 30 mA
Viso : 2000 V
Outline
TO-220FN
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Switching mode power supply, washing machine, motor control, heater control, and other general purpose control
applications
Maximum Ratings
Parameter
Note1
Repetitive peak off-state voltage
Non-repetitive peak off-state voltageNote1
Rev.1.00, Aug.20.2004, page 1 of 7
Symbol
Voltage class
14
Unit
VDRM
VDSM
700
840
V
V
BCR12KM-14LA
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
12
Unit
A
Surge on-state current
ITSM
120
A
I2 t
60
A2 s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
– 40 to +125
– 40 to +125
2.0
2000
W
W
V
A
°C
°C
g
V
Symbol
Min.
Typ.
Max.
Unit
IDRM
VTM
—
—
—
—
2.0
1.6
mA
V
Tj = 125°C, VDRM applied
Tc = 25°C, ITM = 20 A,
Instantaneous measurement
VFGTΙ
VRGTΙ
VRGTΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
VGD
Rth (j-c)
(dv/dt)c
—
—
—
—
—
—
0.2
—
10
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
30
30
30
—
3.3
—
V
V
V
mA
mA
mA
V
°C/W
V/µs
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 77°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltageNote2
Gate trigger currentNote2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Test conditions
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate non-trigger voltage
Tj = 125°C, VD = 1/2 VDRM
Thermal resistance
Junction to caseNote3
Critical-rate of rise of off-state
Tj = 125°C
commutating voltageNote4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 6 A/ms
3. Peak off-state voltage
VD = 400 V
Rev.1.00, Aug.20.2004, page 2 of 7
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR12KM-14LA
Performance Curves
102
7
5
3
2
101
7
5
3
2
Rated Surge On-State Current
200
Tj = 125°C
Tj = 25°C
100
7
5
3
2
Surge On-State Current (A)
On-State Current (A)
Maximum On-State Characteristics
120
100
80
60
40
20
2 3 4 5 7 101
2 3 4 5 7 102
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
102
7
5
3
2 VGM = 10V
PGM = 5W
VGT = 1.5V
PG(AV) =
0.5W
IGM = 2A
100
7
5
3
2
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Conduction Time (Cycles at 60Hz)
103
7
5
4
3
2
102
7
5
4
3
2
Typical Example
IRGT I, IRGT III
IFGT I
101
–60 –40 –20 0 20 40 60 80 100 120 140
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
4
3
2
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Rev.1.00, Aug.20.2004, page 3 of 7
Transient Thermal Impedance (°C/W)
Gate Voltage (V)
140
On-State Voltage (V)
IRGT I IFGT I, IRGT III
VGD = 0.2V
10–1
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
160
0
100
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
101
7
5
3
2
180
102 2 3 5 7 103 2 3 5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Conduction Time (Cycles at 60Hz)
BCR12KM-14LA
Maximum On-State Power Dissipation
3
10
7
5
3
2
2
10
7
5
3
2
1
10
7
5
3
2
0
10
7
5
3
2
–1
10 1
No Fins
16
On-State Power Dissipation (W)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
6
4
2
0
2
4
6
8
10
12
14
16
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
Ambient Temperature (°C)
Curves apply regardless
140 of conduction angle
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
2
6
4
8
10
12
14
16
All fins are black painted
140 aluminum and greased
120
120 × 120 × t2.3
100
100 × 100 × t2.3
80
60 × 60 × t2.3
60 Curves apply
regardless of
40 conduction angle
Resistive,
20 inductive loads
Natural convection
0
0
2
6
4
8
10
12
14
16
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
160
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
Rev.1.00, Aug.20.2004, page 4 of 7
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Case Temperature (°C)
8
Conduction Time (Cycles at 60Hz)
160
Ambient Temperature (°C)
12 360° Conduction
Resistive,
10 inductive loads
0
10 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105
0
14
105
7 Typical Example
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
BCR12KM-14LA
103
7
5
4
3
2
Latching Current vs.
Junction Temperature
Latching Current (mA)
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140
Distribution
102
T2+, G–
Typical Example
7
5
3
2
101
7
5
3
2
T2+, G+
Typical Example
T2–, G–
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Junction Temperature (°C)
160
160
Typical Example
Tj = 125°C
140
120
#2
100
III Quadrant
80
60
40
#1
20
I Quadrant
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics
Gate Trigger Current vs.
Gate Current Pulse Width
3 Typical Example
2 Tj = 125°C
102 IT = 4A
7 τ = 500µs
5 VD = 200V
3 f = 3Hz
2
101
7
5
3
2
103
7
5
3
2
100
–40
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
I Quadrant
Minimum
Characteristics
Value
III Quadrant
100
7
5
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Rate of Decay of On-State
Commutating Current (A/ms)
Rev.1.00, Aug.20.2004, page 5 of 7
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
Holding Current (Tj = t°C)
× 100 (%)
Holding Current (Tj = 25°C)
Holding Current vs.
Junction Temperature
103
7
5
4
3
2
Typical Example
IFGT I
IRGT I
IRGT III
102
7
5
4
3
2
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current Pulse Width (µs)
BCR12KM-14LA
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
A
6V
330Ω
V
Test Procedure I
A
V
V
Test Procedure II
6Ω
6V
A
6V
330Ω
Test Procedure III
Rev.1.00, Aug.20.2004, page 6 of 7
330Ω
BCR12KM-14LA
Package Dimensions
TO-220FN
EIAJ Package Code

JEDEC Code

Mass (g) (reference value)
Lead Material
2.0
Cu alloy
2.8 ± 0.2
6.5 ± 0.3
3 ± 0.3
φ 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
4.5 ± 0.2
2.54 ± 0.25
2.6 ± 0.2
Symbol
Dimension in Millimeters
Min
Typ
Max
A
A1
A2
b
D
E
e
x
y
y1
ZD
ZE
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form
Standard packing
Quantity
Standard order code
Straight type
Plastic Magazine (Tube)
50 Type name
Lead form
Plastic Magazine (Tube)
50 Type name – Lead forming code
Note : Please confirm the specification about the shipping in detail.
Rev.1.00, Aug.20.2004, page 7 of 7
Standard order
code example
BCR12KM-14LA
BCR12KM-14LA-A8
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
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information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
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© 2004. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .1.0
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