HMC AUH318

HMC AUH318

Design Assistance

Customised Pack Sizes / Qtys

Assembly Assistance

Support for all industry recognised
supply formats:

Die handling consultancy

Hi-Rel die qualification

Hot & Cold die probing

Electrical test & trimming
o Waffle Pack
o Gel Pak
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
Onsite storage, stockholding &
scheduling

100% Visual Inspection
o MIL-STD 883 Condition A
o MIL-STD 883 Condition A

On-site failure analysis

Bespoke 24 Hour monitored
storage systems for secure long
term product support

On-site failure analysis
Contact
[email protected]
For price, delivery and to place orders
HMC-AUH318
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HMC-AUH318
v07.0713
3
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
Typical Applications
Features
This HMC-AUH318 is ideal for:
Gain: 24 dB
• Short Haul / High Capacity Links
P1dB: +17.5 dBm
• Test & Measurement Equipment
Supply Voltage: +4V
• E-Band Communication Systems
50 Ohm Matched Input/Output
AMPLIFIERS - LINEAR & POWER - CHIP
Die Size: 2.65 x 1.60 x 0.05 mm
General Description
Functional Diagram
The HMC-AUH318 is a high dynamic range, three
stage GaAs HEMT MMIC Medium Power Amplifier
which operates between 71 and 76 GHz. The HMCAUH318 provides 24 dB of gain, and an output
power of +17.5 dBm at 1 dB compression from a +4V
supply voltage. All bond pads and the die backside
are Ti/Au metallized. The HMC-AUH318 GaAs
HEMT MMIC Medium Power Amplifier is compatible
with conventional die attach methods, as well as
thermocompression and thermosonic wire bonding,
making it ideal for MCM and hybrid microcircuit
applications. All data shown herein is measured with
the chip in a 50 Ohm environment and contacted with
RF probes.
Electrical Specifications[1], TA = +25° C, Vdd1 = Vdd2 = 4V, Idd1 = Idd2 = 80 mA [2]
Parameter
Min.
Frequency Range
Typ.
Max.
Units
71 - 76
GHz
24
dB
Input Return Loss
7
dB
Output Return Loss
4
dB
Gain
21
Output power for 1 dB Compression (P1dB)
17.5
dBm
Saturated Output Power (Psat)
20
dBm
Supply Current (Idd1+Idd2)
160
mA
[1] Unless otherwise indicated, all measurements are from probed die.
[2] Adjust Vgg1, Vgg2 independently between -0.8V to +0.3V (typically -0.1V) to achieve drain currents of Idd1 = 80 mA and Idd2 = 80 mA.
Products and product information are subject to change without notice.
3-1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC-AUH318
v07.0713
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
Fixtured Output Power vs. Frequency
Linear Gain vs. Frequency
21
26
25
20
23
22
21
20
3
P1dB
PSat
19
18
17
19
18
16
68
70
72
74
76
78
70
80
71
FREQUENCY (GHz)
Input Return Loss vs. Frequency
73
74
75
Output Return Loss vs. Frequency
0
0
-2
RETURN LOSS (dB)
-5
RETURN LOSS (dB)
72
FREQUENCY (GHz)
-10
-15
-20
-4
-6
-8
-10
-12
-25
-14
68
70
72
74
76
FREQUENCY (GHz)
78
80
68
70
72
74
76
78
80
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
AMPLIFIERS - LINEAR & POWER - CHIP
POUT (dBm)
GAIN (dB)
24
3-2
HMC-AUH318
v07.0713
Absolute Maximum Ratings
AMPLIFIERS - LINEAR & POWER - CHIP
3
Reliability Information
Nominal 4.0V Supply to GND
0.0V to +4.5V
Gate Bias Voltage
-0.8V to +0.3V
RF Input Power (Vdd = +4.0V)
+3 dBm
Storage Temperature
Max Peak Reflow Temperature
-65 to +150 °C
260 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Junction Temperature to Maintain
1 Million Hour MTTF
180 °C
Nominal Junction Temperature (T = 85 °C)
156.5 °C
Thermal Resistance (Junction to Die Bottom)
111.7 °C/W
Operating Temperature
-55 to +85 °C
Drain Bias Current (Idd1)
100 mA
Drain Bias Current (Idd2)
100 mA
DO NOT EXPOSE PRODUCT TO CONDENSING
MOISTURE WHILE UNDER OPERATION.
Outline Drawing
Die Packaging Information [1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
3-3
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. BACKSIDE METALLIZATION: GOLD.
3. BACKSIDE METAL IS GROUND.
4. BOND PAD METALLIZATION: GOLD.
5. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
6. OVERALL DIE SIZE ±.002”
7. DIE THICKNESS IS 0.002” [0.050 mm]
8 TYPICAL BOND PAD IS 0.004” [0.100 mm] SQUARE UNLESS NOTED
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC-AUH318
v07.0713
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
Pad Descriptions
Function
Description
1
RFIN
This pad is AC coupled
and matched to 50 Ohms.
2, 3
Vgg1, Vgg2
Gate control for amplifier. Please follow “MMIC Amplifier
Biasing Procedure” application note. See assembly for
required external components.
4
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
5, 6
Vdd1, Vdd2
Power Supply Voltage for the amplifier. See assembly for
required external components.
Die Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
3
AMPLIFIERS - LINEAR & POWER - CHIP
Pad Number
3-4
HMC-AUH318
v07.0713
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
Assembly Diagram
AMPLIFIERS - LINEAR & POWER - CHIP
3
3-5
Note 1: Bypass caps should be 100 pF (approximately) single-layer placed no farther than 30 mils from the amplifier.
Note 2: Best performance is obtained by minimizing the length of the ribbon, 1.5 by 0.5 mil, on the input and output.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC-AUH318
v07.0713
GaAs HEMT MMIC MEDIUM POWER
AMPLIFIER, 71 - 76 GHz
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
50 Ohm Microstrip transmission lines on 0.127 mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1).
Microstrip substrates should be placed as close to the die as possible
in order to minimize bond wire length. Typical die-to-substrate spacing is
0.076 mm to 0.152 mm (3 to 6 mils).
0.05mm (0.002”) Thick GaAs MMIC
Ribbon Bond
0.076mm
(0.003”)
RF Ground Plane
Handling Precautions
Follow these precautions to avoid permanent damage.
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Storage: All bare die are placed in either Waffle or Gel based ESD proFigure 1.
tective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias
cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with
a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball
bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with
a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable
bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
3
AMPLIFIERS - LINEAR & POWER - CHIP
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
3-6
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