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HMC-ALH376
v02.0209
LOW NOISE AMPLIFIERS - CHIP
1
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 35 - 45 GHz
Typical Applications
Features
This HMC-ALH376 is ideal for:
Noise Figure: 2 dB
• Point-to-Point Radios
Gain: 16 dB @ 40 GHz
• Point-to-Multi-Point Radios
P1dB Output Power: +6 dBm
• Test Equipment & Sensors
Supply Voltage: +4V @ 87 mA
• Military & Space
Die Size: 2.7 x 1.44 x 0.1 mm
Functional Diagram
General Description
The HMC-ALH376 is a GaAs MMIC HEMT three
stages, self-biased Low Noise Amplifier die
which operates between 35 and 45 GHz. The
amplifier provides 16 dB of gain, a 2 dB noise
figure and +6 dBm of output power at 1 dB gain
compression while requiring only 87 mA from a single
+4V supply. This self-biased LNA is ideal for integration into hybrid assemblies or Multi-Chip-Modules
(MCMs) due to its small size (3.9 mm2).
Electrical Specifi cations*, TA = +25° C, Vdd= +4V
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
35 - 40
15
Typ.
Max.
40 - 45
16
10
3
GHz
12
2.2
dB
Noise Figure
2
3
Input Return Loss
10
17
Output Return Loss
16
18
dB
Output Power for 1 dB Compression
6
6
dBm
Supply Current (Idd) (Vdd= +4V)
87
87
mA
*Unless otherwise indicated, all measurements are from probed die
1 - 168
Units
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
dB
dB
HMC-ALH376
v02.0209
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 35 - 45 GHz
20
4
15
10
3
2
1
0
0
35
37
39
41
43
45
35
37
FREQUENCY (GHz)
39
41
43
45
FREQUENCY (GHz)
Input Return Loss vs. Frequency
Output Return Loss vs. Frequency
0
-5
-5
RETURN LOSS (dB)
0
-10
-15
-20
-25
-10
-15
LOW NOISE AMPLIFIERS - CHIP
5
NOISE FIGURE (dB)
GAIN (dB)
25
5
RETURN LOSS (dB)
1
Noise Figure vs. Frequency
Linear Gain vs. Frequency
-20
-25
-30
-30
35
37
39
41
FREQUENCY (GHz)
43
45
35
37
39
41
43
45
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 169
HMC-ALH376
v02.0209
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 35 - 45 GHz
LOW NOISE AMPLIFIERS - CHIP
1
Absolute Maximum Ratings
Drain Bias Voltage
+5.5 Vdc
RF Input Power (35 - 40 GHz)
-5 dBm
RF Input Power (40 - 45 GHz)
-1 dBm
Channel Temperature
180 °C
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Outline Drawing
Die Packaging Information [1]
Standard
Alternate
GP-2 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
1 - 170
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE ±.002”
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH376
v02.0209
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 35 - 45 GHz
Pad Number
Function
Description
1
RFIN
This pad is AC coupled
and matched to 50 Ohms.
2
Vdd
Power Supply Voltage for the amplifier. See assembly for
required external components.
3
RFOUT
This pad is AC coupled
and matched to 50 Ohms.
Die bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LOW NOISE AMPLIFIERS - CHIP
1
Pad Descriptions
1 - 171
HMC-ALH376
v02.0209
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 35 - 45 GHz
LOW NOISE AMPLIFIERS - CHIP
1
Assembly Diagram
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier.
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output.
1 - 172
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH376
v02.0209
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 35 - 45 GHz
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should be placed as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity:
strikes.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Follow ESD precautions to protect against ESD
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
LOW NOISE AMPLIFIERS - CHIP
1
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded
with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended.
Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made
with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve
reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 173
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